CN220545386U - Large-size diamond film radiating fin - Google Patents
Large-size diamond film radiating fin Download PDFInfo
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- CN220545386U CN220545386U CN202322167683.7U CN202322167683U CN220545386U CN 220545386 U CN220545386 U CN 220545386U CN 202322167683 U CN202322167683 U CN 202322167683U CN 220545386 U CN220545386 U CN 220545386U
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- diamond film
- substrate
- fin
- radiating fin
- intermediate layer
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- 239000010432 diamond Substances 0.000 title claims abstract description 87
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000008021 deposition Effects 0.000 claims abstract description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 9
- 230000006978 adaptation Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000003044 adaptive effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000003698 laser cutting Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000000843 powder Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a large-size diamond film radiating fin which comprises a large radiating fin, wherein the large radiating fin is formed by connecting four small radiating fins, the small radiating fin comprises a substrate, an intermediate layer is arranged at the upper end of the substrate, a diamond film layer is arranged at the upper end of the intermediate layer, a groove is arranged at the front side edge position of the lower end of the substrate, a lug is arranged at the right side edge position of the lower end of the substrate, a cylinder is arranged in the middle of the upper surface of the groove, a round hole is arranged in the middle of the surface of the lug, and the cylinder and the round hole are connected in an adaptive manner to form four small radiating fins; the four substrates are spliced seamlessly through the matching connection of the cylinder and the round hole between the adjacent small radiating fins, so that the corresponding diamond film layers are spliced together seamlessly, a large-size diamond film radiating fin is formed, and the radiating effect is improved; the positions of diamond deposition are limited through the right-angle steps, so that laser cutting is conducted on the diamond film layers before the later-stage small cooling fins are assembled, and the adjacent diamond film layers can be assembled seamlessly.
Description
Technical Field
The utility model relates to the technical field of diamond film radiating fins, in particular to a large-size diamond film radiating fin.
Background
With the continuous increase of the power of electronic products, the heat dissipation requirement is also increased, and the diamond film radiating fin can provide excellent heat cooling for laser chips and high-power motor equipment, so that the diamond film radiating fin has a larger prospect in the field of electronic equipment, but the larger the CVD diamond generation size is, the larger the growth difficulty is, the higher the cost is, the longer the required time is, the worse the surface quality of grown diamond is, and in order to enlarge the area of a diamond film on the basis of controlling the cost, the large-size diamond film radiating fin is provided.
One chinese utility model patent of patent No. CN202011150253.9, discloses a method for preparing a large-sized diamond heat sink, which comprises the following steps: grinding and polishing the CVD diamond piece; cutting the ground and polished CVD diamond piece by using femtosecond laser, wherein the edge straightness of the cut CVD diamond piece is 0.1um and the precision is below 0.5um, and the shapes of the cut CVD diamond pieces can be matched and connected into pieces; splicing the cut CVD diamond piece into a piece; in order to overcome the defect of the prior art of lacking a large-sized diamond cooling fin with low cost, the utility model provides a preparation method of the large-sized diamond cooling fin, which has low cost but can obtain the large-sized diamond cooling fin, meets the thermal management requirement of electronic elements with increasingly improved performance, but has the following problems: the CVD diamond plates after cutting are required to be subjected to adhesive, the conditions that the adhesive overflows conveniently and the adhesive is adhered to the diamond plates in a non-uniform thickness are easy to occur in the connecting mode, so that the heat dissipation performance of the diamond plates is affected, an aluminum alloy substrate or a copper substrate is selected as a substrate, the substrate is easily oxidized in a high-temperature state, the heat conduction performance is poor, and compared with a ceramic substrate, a metal substrate has conductivity and the risk of electric leakage is caused.
Disclosure of Invention
The utility model aims at solving the technical problem of high production cost of the large-size diamond film radiating fin by modularly designing the radiating fin aiming at the defects of the prior art; the technical problem of thermal conductivity reduction caused by low density of thermal contact points between the diamond film layer and the intermediate layer is solved by directly depositing a grown CVD diamond film on the surface of the intermediate layer.
In order to achieve the above purpose, the present utility model provides the following technical solutions:
the utility model provides a jumbo size diamond film fin, includes big fin, big fin is formed by four little fin connection, little fin includes the substrate, the substrate upper end is equipped with the intermediate level, the intermediate level upper end is equipped with the diamond rete, substrate lower extreme front side limit position is equipped with the recess, just substrate lower extreme right side limit position is equipped with the lug, recess upper surface middle part is equipped with the cylinder, lug surface middle part is equipped with the round hole, the cylinder is connected with the round hole adaptation.
Preferably, the diamond film layer is a CVD diamond film directly deposited and grown on the surface of the intermediate layer.
Preferably, a right-angle step is arranged at the upper left corner of the upper end of the middle layer, rectangular grooves are uniformly formed in the lower end of the middle layer, and the middle layer is made of aluminum silicon carbide composite materials.
Preferably, the substrate is a ceramic substrate, and rectangular blocks are uniformly distributed on the upper surface of the substrate.
Preferably, an L-shaped step is arranged at the upper left corner of the upper surface of the substrate, and the L-shaped step is fixedly connected with the left end of the rectangular block.
Preferably, the rectangular block is connected with the rectangular groove in a fitting way.
The utility model has the beneficial effects that:
(1) According to the utility model, four small radiating fins are arranged, the round holes are connected with the cylinders between the adjacent small radiating fins in an adaptive manner, and the grooves and the bumps which are overlapped together are welded together and polished to be smooth, so that the four substrates are spliced together in a seamless manner, and the corresponding diamond film layers are spliced together in a seamless manner, so that the large-size diamond film radiating fin is formed, the production cost is low, and the radiating area is large.
(2) Compared with the method of pressing and forming diamond particles and other materials or adhering the diamond film on the surfaces of other supporting materials in a bonding mode, the CVD diamond film directly deposited and grown on the surfaces of the intermediate layer has the advantages that the density of thermal contact points between the diamond film layer and the intermediate layer is increased, and meanwhile, the adhesive force between the film and the substrate can be improved, so that the heat conduction capability between the films is high.
(3) According to the utility model, the right-angle steps are arranged and used for limiting the deposition positions of the diamonds, so that the diamond film layers can be conveniently subjected to laser cutting before the later-stage small cooling fin assembly, and the adjacent diamond film layers can be assembled together in a seamless manner.
In conclusion, the design has the advantages of simple structure, large size and high heat conductivity, and is particularly suitable for the technical field of diamond film radiating fins.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, it being obvious that the drawings described below are only some embodiments of the present utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic exploded view of the structure of a small fin portion.
Fig. 2 is a schematic diagram of the overall structure of a large-sized diamond film heat sink.
Fig. 3 is a bottom view of a large-sized diamond film heat sink.
Fig. 4 is a schematic diagram of the upper structure of a substrate portion.
Fig. 5 is a schematic view of the bottom structure of a substrate portion.
Fig. 6 is a schematic structural view of an intermediate layer portion.
Detailed Description
The technical solutions in the embodiments of the present utility model are clearly and completely described below with reference to the accompanying drawings.
Example 1
As shown in fig. 1 to 6, the present utility model provides a large-sized diamond film heat sink, comprising a large heat sink 1, the large heat sink 1 is formed by connecting four small heat sinks 2, the diamond film heat sink has a size proportional to the difficulty of growth, the production cost and the required time, and the size of the diamond film heat sink is inversely proportional to the quality of the grown diamond surface, and the increase of the diamond size makes the subsequent grinding and polishing difficult, so that the cost of directly depositing the large-sized diamond film heat sink is high, therefore, by using the principle of modular design, the large heat sink 1 of one large size is decomposed into four small heat sinks 2 of the same size, the assembly process is increased, but the overall cost is reduced, the assembly speed of the same module is fast, the number of production lines to be opened is small, the small heat sinks 2 comprise substrates 3, the substrate 3 provides stable support for the middle layer 4 and the diamond film 5, and is also a main connection structure between the small radiating fins 2, the upper end of the substrate 3 is provided with the middle layer 4, the middle layer 4 is a substrate of the diamond film 5, the upper surface of the middle layer 4 is kept in a smooth state except for a right-angle step 41 part, so that diamond materials are uniformly deposited on the surface of the middle layer 4, the upper end of the middle layer 4 is provided with the diamond film 5, a microwave plasma CVD method is selected for growing a CVD diamond film, the whole growth is divided into a nucleation stage and a growth stage, the growth surface is in a polycrystalline state and is uneven, laser leveling cutting is required to be carried out on the growth surface of the diamond film 5, the upper end of the diamond film 5 is ground and leveled by a grinding method, a groove 31 is arranged at the front side edge position of the lower end of the substrate 3, a bump 32 is arranged at the right side edge position of the lower end of the substrate 3, the middle part of the upper surface of the groove 31 is provided with a cylinder 311, the middle part of the surface of the lug 32 is provided with a round hole 321, the cylinder 311 is connected with the round hole 321 in an adaptive manner, the inner surfaces of the round holes 321 of two adjacent substrates 3 are sleeved with the cylinder 311, so that the lug 32 is matched with the groove 31, the lower bottom surface of the large radiating fin 1 is kept flat and is placed stably, the lug 32 and the groove 31 are welded together, and the firmness of each other is increased.
Further, as shown in fig. 2, the diamond film layer 5 is a CVD diamond film directly deposited and grown on the surface of the intermediate layer 4, and the low-cost operation method for bonding the diamond film and the substrate thereof is that the diamond particles and other materials are pressed and formed, the occupation ratio of the diamond particles is small, the heat conductivity of the diamond is reduced when the diamond particles and other materials are mixed together, and the heat conductivity of the obtained heat dissipation material is generally not more than 300W/m.k; another method is to adhere a thinner diamond film to the surface of other support materials by means of bonding, but the adhesive affects the heat conduction between the diamond film and other support materials, so we choose to deposit a CVD diamond film grown directly on the surface of the intermediate layer 4, which has the advantage that the density of the thermal contact points between the diamond film layer 5 and the intermediate layer 4 increases, while the adhesion between the film and the substrate can be improved, so that the heat conduction capacity between each other is high.
Further, as shown in fig. 6, the upper left corner of the upper end of the middle layer 4 is provided with a right-angle step 41, the height of the right-angle step 41 is lower, the deposition position of the diamond film 5 is limited, the edge of the right-angle step 41 is kept flush when the surface of the diamond film 5 is flattened, so that the whole small radiating fin 2 is integrated and attractive, the lower end of the middle layer 4 is uniformly provided with a rectangular groove 42, the middle layer 4 and the substrate 3 are connected together by adopting a laser sintering method, namely, the middle layer 4 and the substrate 3 are locally heated on the surface of aluminum silicon carbide powder by utilizing laser beams, so that a compact aluminum silicon carbide layer is formed on the surface of the substrate 3, therefore, the rectangular groove 42 which is closely attached to the rectangular block 33 is formed on the lower surface of the middle layer 4 in the laser sintering process, the connection area between the middle layer 4 and the substrate 3 is increased, the connection is firmer, the mutual heat conduction area is increased, the heat conduction area is increased, and the heat conduction rate is increased, and the middle layer 4 is made of aluminum silicon carbide material, and the aluminum silicon carbide has the advantages of low raw material cost, high heat conduction, low density, strong plasticity and the like, and the thermal expansion coefficient is similar to that of the thermal expansion coefficient of the substrate of an LED chip, and the elastic modulus is high, and the elastic modulus is small. Meanwhile, aluminum has the characteristics of high heat conduction, low density, low cost, easiness in processing and the like, so that the aluminum has unique advantages when being used as a substrate material.
Further, as shown in fig. 4, the substrate 3 is a ceramic substrate, the ceramic substrate is a commonly used electronic packaging substrate material, compared with plastic packaging materials and metal substrates, the thermal expansion coefficient of the ceramic substrate is close to that of a silicon chip, the thermal mismatch rate is low, the thermal conductivity is good, the thermal resistance is low, the mechanical strength and toughness of the undeniable ceramic substrate are poor, but the aluminum silicon carbide is an extremely hard material, the hardness is only inferior to that of diamond, so that the aluminum silicon carbide ceramic substrate formed by the ceramic substrate and the aluminum silicon carbide is light in weight, strong in hardness, high in bending strength and good in shock resistance effect, rectangular blocks 33 are uniformly distributed on the upper surface of the substrate 3, and the arc blocks 33 are arranged to increase the contact area between the substrate 3 and the intermediate layer 4, so that the thermal conduction effect is better, and sintering between the substrate and the intermediate layer 4 is more compact.
Further, an L-shaped step 34 is arranged at the upper left corner of the upper surface of the substrate 3, the L-shaped step 34 is fixedly connected with the left end of the rectangular block 33, and the L-shaped step 34 plays a role in positioning the laying thickness of aluminum silicon carbide powder, so that the upper surface of the L-shaped step 34 is kept flush with the upper surface of the middle layer 4.
Further, as shown in fig. 3, the rectangular block 33 is adapted to be connected with the rectangular groove 42, and the contact surface between the rectangular block 33 and the rectangular groove 42 is larger than the plane contact area, so that the connection between the rectangular block 33 and the rectangular groove is stable, the thermal conductivity is high, and the height of the rectangular block 33 and the rectangular groove 42 is less than 0.1mm.
The working process comprises the following steps: firstly, uniformly laying aluminum silicon carbide powder on the upper surface of a substrate 3, so that the height of the aluminum silicon carbide powder is slightly higher than that of an L-shaped step 34 on the substrate 3; further, the surface of the aluminum silicon carbide powder is locally heated by a laser beam, so that the aluminum silicon carbide powder is melted on the surface of the substrate 3, and a compact aluminum silicon carbide layer, namely an intermediate layer 4, is formed on the surface of the substrate 3; further, the surface of the intermediate layer 4 is subjected to surface planarization treatment, so that the right-angle step 41 is cut after the upper surface of the intermediate layer 4 is kept flush with the L-shaped step 34; further, a microwave plasma CVD method is adopted to generate a CVD diamond film, namely a diamond film layer 5, on the upper surface of the intermediate layer 4, and the diamond film layer 5 is subjected to surface shaping treatment to obtain the small heat sink 2; finally, the inner surfaces of the round holes 321 of two adjacent substrates 3 are sleeved with the columns 311, so that the convex blocks 32 are matched with the grooves 31, and the convex blocks 32 are welded with the grooves 31, so that the four small radiating fins 2 are connected with each other to form the large radiating fin 1.
In the description of the present utility model, it should be understood that the directions or positional relationships indicated by the terms "front and rear", "left and right", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or component in question must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the utility model.
Of course, in this disclosure, those skilled in the art will understand that the term "a" or "an" is to be interpreted as "at least one" or "one or more," i.e., in one embodiment, the number of elements may be one, and in another embodiment, the number of elements may be multiple, and the term "a" is not to be construed as limiting the number.
The foregoing is merely a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any changes or substitutions easily conceivable by those skilled in the art under the technical teaching of the present utility model should be included in the scope of the present utility model. Therefore, the protection scope of the present utility model should be subject to the protection scope of the claims.
Claims (6)
1. A large-size diamond film fin, characterized in that: including big fin (1), big fin (1) is formed by four little fin (2) connection, little fin (2) are including substrate (3), substrate (3) upper end is equipped with intermediate level (4), intermediate level (4) upper end is equipped with diamond coating (5), substrate (3) lower extreme front side edge position is equipped with recess (31), just substrate (3) lower extreme right side edge position is equipped with lug (32), recess (31) upper surface middle part is equipped with cylinder (311), lug (32) surface middle part is equipped with round hole (321), cylinder (311) and round hole (321) adaptation are connected.
2. A large-sized diamond film heat sink according to claim 1, characterized in that the diamond film layer (5) is a CVD diamond film grown by direct deposition on the surface of the intermediate layer (4).
3. The large-size diamond film radiating fin according to claim 1, wherein a right-angle step (41) is arranged at the upper left corner of the upper end of the intermediate layer (4), rectangular grooves (42) are uniformly formed at the lower end of the intermediate layer (4), and the intermediate layer (4) is made of aluminum silicon carbide composite material.
4. A large-sized diamond film heat sink according to claim 1, wherein the substrate (3) is a ceramic substrate, and rectangular blocks (33) are uniformly distributed on the upper surface of the substrate (3).
5. The large-size diamond film radiating fin according to claim 1, wherein an L-shaped step (34) is arranged at the upper left corner of the upper surface of the substrate (3), and the L-shaped step (34) is fixedly connected with the left end of the rectangular block (33).
6. A large-sized diamond film heat sink according to claim 4, characterized in that the rectangular block (33) is adapted to be connected with a rectangular groove (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322167683.7U CN220545386U (en) | 2023-08-14 | 2023-08-14 | Large-size diamond film radiating fin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322167683.7U CN220545386U (en) | 2023-08-14 | 2023-08-14 | Large-size diamond film radiating fin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220545386U true CN220545386U (en) | 2024-02-27 |
Family
ID=89975674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322167683.7U Active CN220545386U (en) | 2023-08-14 | 2023-08-14 | Large-size diamond film radiating fin |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220545386U (en) |
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2023
- 2023-08-14 CN CN202322167683.7U patent/CN220545386U/en active Active
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