CN220543055U - Silicon controlled rectifier test circuit - Google Patents
Silicon controlled rectifier test circuit Download PDFInfo
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- CN220543055U CN220543055U CN202321802727.2U CN202321802727U CN220543055U CN 220543055 U CN220543055 U CN 220543055U CN 202321802727 U CN202321802727 U CN 202321802727U CN 220543055 U CN220543055 U CN 220543055U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 138
- 239000010703 silicon Substances 0.000 title claims abstract description 138
- 238000012360 testing method Methods 0.000 title claims abstract description 81
- 230000002457 bidirectional effect Effects 0.000 claims description 36
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000001052 transient effect Effects 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 5
- 230000001960 triggered effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
The implementation provides a silicon controlled rectifier test circuit, which relates to the technical field of test circuits. The silicon controlled rectifier test circuit transmits pulse test signals to the silicon controlled rectifier to be tested through the pulse generating device, the working states of the silicon controlled rectifier to be tested under different interference scenes are simulated, the conduction indicating device indicates whether the test circuit is conducted, if the conduction indicating device indicates that the test circuit is conducted, the fact that the electric rapid transient burst interference level at the moment exceeds the anti-interference level of the silicon controlled rectifier to be tested is indicated, the voltage of the pulse generating device is adjusted down in a small amplitude until the conduction indicating device indicates that the test circuit is not conducted, and the anti-interference level of the silicon controlled rectifier to be tested can be determined. The silicon controlled rectifier test circuit can be used for independently testing the anti-interference capability of the silicon controlled rectifier in a non-complete machine circuit, and compared with the prior art, the silicon controlled rectifier test circuit can be used for rapidly and effectively testing the anti-interference capability of the silicon controlled rectifier, and the accuracy and the reliability of an experimental result are higher.
Description
Technical Field
The application relates to the technical field of test circuits, in particular to a silicon controlled rectifier test circuit.
Background
The silicon controlled rectifier (Silicon Controlled Rectifier, SCR for short) is a high-power electrical element, also called a thyristor, and has the advantages of small volume, high efficiency, long service life and the like. Because the controllable silicon has controllability, the conduction and the blocking of the controllable silicon can be controlled by an external trigger or a control circuit, so that the controllable silicon becomes an important component in the application fields of electronics and power. For example, in an automatic control system, the control of high-power equipment by a low-power control can be realized as a high-power driving device.
When used in a complete machine circuit, thyristors are typically used to control high voltage and/or high current output in the power supply. However, transient pulses may be generated during operation of various devices, which may cause interference to the devices and/or the thyristors. This interference occurs in the form of pulse bursts with steep leading edges, also known as electrical fast transient bursty interference (EFT). At this time, if the electric fast transient burst interference level exceeds the anti-interference level of the silicon controlled rectifier, the silicon controlled rectifier will malfunction, which may cause abnormal operation of the device.
If the anti-interference level of the silicon controlled rectifier can be determined in advance, an improvement suggestion can be provided for product parameter optimization, and the risk of electric quick transient burst interference in equipment operation is avoided. However, in the prior art, the anti-jamming capability of a thyristor integrated in a device is typically tested in a complete machine environment using an electrical fast transient pulse train simulator (also referred to as an EFT tester). Specifically, the electric fast transient pulse group simulator sends out a pulse harmonic signal, and the pulse harmonic signal is usually composed of short pulses of high-frequency energy, has wide and dense harmonic distribution in a frequency spectrum, and can simulate high-energy transient interference in a real environment. The testing process is roughly as follows: the electric fast transient pulse group simulator transmits energy pulses in different directions to the tested equipment, and simulates the working states of the equipment under different interference scenes, so that the immunity level of the silicon controlled rectifier is determined. The method for testing the anti-interference capability of the silicon controlled rectifier in the whole circuit is characterized in that the silicon controlled rectifier is easily interfered by other elements in the equipment, and the accuracy and the reliability of experimental results are not ensured.
Disclosure of Invention
In order to at least overcome the above-mentioned shortcomings in the prior art, an object of the present application is to provide a silicon controlled rectifier test circuit.
In a first aspect, an embodiment of the present application provides a silicon controlled rectifier test circuit, where the silicon controlled rectifier test circuit includes a pulse generating device, a silicon controlled rectifier to be tested, a triggering unit, and a conduction indicating device.
The pulse generating device comprises a first pulse generating port and a second pulse generating port, the first end of the to-be-detected silicon controlled rectifier, the second end of the to-be-detected silicon controlled rectifier and the conduction indicating device are connected in series between the first pulse generating port and the second pulse generating port, and the triggering unit is connected between the control end of the to-be-detected silicon controlled rectifier and the second end of the to-be-detected silicon controlled rectifier.
The pulse generating device is used for generating a pulse test signal with variable voltage, the triggering unit is used for controlling the conduction condition of the to-be-tested silicon controlled rectifier, and the conduction indicating device is used for indicating whether the to-be-tested silicon controlled rectifier is triggered by mistake under the current voltage.
In one possible implementation, the scr test circuit further includes a rectifying circuit having a first rectifying terminal, a second rectifying terminal, a third rectifying terminal, and a fourth rectifying terminal.
The first pulse generating end is connected with the first rectifying end, the second rectifying end is connected with the silicon controlled rectifier to be tested, the third rectifying end is connected with the conduction indicating equipment, and the fourth rectifying end is connected with the second pulse generating end.
In one possible implementation, the rectifying circuit includes a first diode, a second diode, a third diode, and a fourth diode.
The cathode of the first diode is connected with the anode of the second diode, the cathode of the second diode is connected with the cathode of the third diode, the anode of the first diode is connected with the anode of the fourth diode, and the cathode of the fourth diode is connected with the anode of the third diode.
The first rectifying end is located between the cathode of the first diode and the anode of the second diode, the second rectifying end is located between the cathode of the second diode and the cathode of the third diode, the third rectifying end is located between the anode of the first diode and the anode of the fourth diode, and the fourth rectifying end is located between the cathode of the fourth diode and the anode of the third diode.
In one possible implementation manner, the silicon controlled rectifier to be tested is a unidirectional silicon controlled rectifier, a first end of the silicon controlled rectifier to be tested corresponds to an anode of the unidirectional silicon controlled rectifier, a second end of the silicon controlled rectifier to be tested corresponds to a cathode of the unidirectional silicon controlled rectifier, and a control end of the silicon controlled rectifier to be tested corresponds to a control electrode of the unidirectional silicon controlled rectifier.
The anode of the unidirectional silicon controlled rectifier is connected with the second rectifying end, the trigger unit is connected between the control electrode of the unidirectional silicon controlled rectifier and the cathode of the unidirectional silicon controlled rectifier, one end of the conduction indicating device is connected with the cathode of the unidirectional silicon controlled rectifier, and the other end of the conduction indicating device is connected with the third rectifying end.
In one possible implementation, the trigger unit includes a first resistor. One end of the first resistor is connected with the control electrode of the unidirectional silicon controlled rectifier, and the other end of the first resistor is connected with the cathode of the unidirectional silicon controlled rectifier.
In one possible implementation, the trigger unit includes a first resistor, a second resistor, and a first capacitor.
One end of the first resistor is connected with the control electrode of the unidirectional silicon controlled rectifier, the other end of the first resistor is connected with the second resistor in series, the second resistor is connected with the cathode of the unidirectional silicon controlled rectifier, and the first capacitor is connected with the second resistor in parallel.
In one possible implementation manner, the silicon controlled rectifier to be tested is a bidirectional silicon controlled rectifier, the first end of the silicon controlled rectifier to be tested corresponds to the first main electrode of the bidirectional silicon controlled rectifier, the second end of the silicon controlled rectifier to be tested corresponds to the second main electrode of the bidirectional silicon controlled rectifier, and the control end of the silicon controlled rectifier to be tested corresponds to the control electrode of the bidirectional silicon controlled rectifier.
The first main electrode of the bidirectional thyristor is connected with the first pulse generating end, the triggering unit is connected between the control electrode of the bidirectional thyristor and the second main electrode of the bidirectional thyristor, one end of the conduction indicating device is connected with the second main electrode of the bidirectional thyristor, and the other end of the conduction indicating device is connected with the second pulse generating end.
In one possible implementation, the trigger unit includes a first resistor. One end of the first resistor is connected with the first main electrode of the bidirectional thyristor, and the other end of the first resistor is connected with the second main electrode of the bidirectional thyristor.
In one possible implementation, the trigger unit includes a first resistor, a second resistor, and a first capacitor. One end of the first resistor is connected with the first main electrode of the bidirectional thyristor, the other end of the first resistor is connected with the second resistor in series, the second resistor is connected with the second main electrode of the bidirectional thyristor, and the first capacitor is connected with the second resistor in parallel.
In one possible implementation, the turn-on indication means comprises a light bulb.
Based on any one of the above aspects, the silicon controlled rectifier test circuit provided in the embodiments of the present application includes a pulse generating device, a silicon controlled rectifier to be tested, a trigger unit, and a conduction indicating device. The pulse generating device sends energy pulses in different directions to the controllable silicon to be tested, and the energy pulses are used for simulating the working states of the controllable silicon to be tested under different interference scenes. If the conduction indicating device indicates that the test circuit is conducted, the fact that the silicon controlled rectifier to be tested is triggered by mistake is indicated, namely that the electric rapid transient state burst interference level at the moment exceeds the anti-interference level of the silicon controlled rectifier to be tested, the voltage of the pulse generating device can be adjusted downwards in a small amplitude until the conduction indicating device indicates that the test circuit is not conducted, and the anti-interference level of the silicon controlled rectifier to be tested can be determined. The silicon controlled rectifier test circuit provided by the embodiment can be used for independently testing the anti-interference capability of the silicon controlled rectifier in a non-complete machine circuit, and compared with the prior art, the silicon controlled rectifier test circuit can be used for quickly and effectively testing the anti-interference capability of the silicon controlled rectifier, and the accuracy and the reliability of an experimental result are higher.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the drawings required for the embodiments, it being understood that the following drawings illustrate only some embodiments of the present application and are therefore not to be considered limiting of the scope, and that other related drawings may be obtained according to these drawings without the inventive effort of a person skilled in the art.
Fig. 1 is a schematic diagram of one possible circuit structure of a scr test circuit according to an embodiment of the present application;
fig. 2 is a schematic diagram of one possible circuit structure of a unidirectional scr test circuit according to an embodiment of the present application;
fig. 3 is a schematic diagram of a second possible circuit structure of the unidirectional scr test circuit according to the embodiment of the present application;
fig. 4 is a schematic diagram of one possible circuit structure of a bidirectional thyristor test circuit according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a second possible circuit structure of the bidirectional thyristor test circuit according to the embodiment of the present application.
Icon: 110-pulse generating means; 111-a first pulse generating end; 112-second pulse generating end; 120-the silicon controlled rectifier to be tested; 130-a trigger unit; 131-a first resistor; 132-a second resistor; 133-a first capacitance; 140-turn-on indication means; 150-a rectifying circuit; 151-a first diode; 152-a second diode; 153-a third diode; 154-fourth diode.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, or the azimuth or positional relationship that is commonly put when the product of the application is used, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
It should be noted that, in the case of no conflict, different features in the embodiments of the present application may be combined with each other.
Referring to fig. 1, the scr test circuit provided in the present application includes a pulse generating device 110, the scr 120 to be tested, a triggering unit 130, and a turn-on indicating device 140.
The pulse generating device 110 includes a first pulse generating end 111 and a second pulse generating end 112, the first end of the to-be-tested thyristor 120, the second end of the to-be-tested thyristor 120, and the turn-on indicating device 140 are connected in series between the first pulse generating end 111 and the second pulse generating end 112, and the triggering unit 130 is connected between the control end of the to-be-tested thyristor 120 and the second end of the to-be-tested thyristor 120.
The pulse generating device 110 is configured to generate a pulse test signal with a variable voltage, the triggering unit 130 is configured to control a conduction condition of the to-be-tested scr, and the conduction indicating device 140 is configured to indicate whether the to-be-tested scr is triggered by mistake under a current voltage.
Specifically, the pulse generating device 110 may be an electric fast transient pulse group simulator, and the electric fast transient pulse group simulator sends energy pulses in different directions to the to-be-tested silicon controlled rectifier 120, so as to simulate the working states of the to-be-tested silicon controlled rectifier 120 under different interference scenes. If the conduction indicating device 140 indicates that the test circuit is conducted, it indicates that the thyristor 120 to be tested is triggered by mistake, that is, the current rapid transient burst interference level exceeds the anti-interference level of the thyristor 120 to be tested, and the voltage of the pulse generating device 110 is adjusted down by a small amplitude until the conduction indicating device 140 indicates that the test circuit is not conducted, so that the anti-interference level of the thyristor 120 to be tested can be determined.
The silicon controlled rectifier test circuit provided by the embodiment can be used for independently testing the anti-interference capability of the silicon controlled rectifier in a non-complete machine circuit, and compared with the prior art, the silicon controlled rectifier test circuit can be used for quickly and effectively testing the anti-interference capability of the silicon controlled rectifier, and the accuracy and the reliability of an experimental result are higher.
Referring to fig. 2 and 3, in one possible implementation manner of the present embodiment, the scr test circuit further includes a rectifying circuit 150, where the rectifying circuit 150 has a first rectifying end, a second rectifying end, a third rectifying end and a fourth rectifying end.
The first pulse generating end 111 is connected with the first rectifying end, the second rectifying end is connected with the silicon controlled rectifier 120 to be tested, the third rectifying end is connected with the conduction indicating equipment 140, and the fourth rectifying end is connected with the second pulse generating end 112.
In one possible implementation manner of this embodiment, the rectifying circuit 150 includes a first diode 151, a second diode 152, a third diode 153, and a fourth diode 154.
The cathode of the first diode 151 is connected to the anode of the second diode 152, the cathode of the second diode 152 is connected to the cathode of the third diode 153, the anode of the first diode 151 is connected to the anode of the fourth diode 154, and the cathode of the fourth diode 154 is connected to the anode of the third diode 153.
The first rectifying terminal is located between the cathode of the first diode 151 and the anode of the second diode 152, the second rectifying terminal is located between the cathode of the second diode 152 and the cathode of the third diode 153, the third rectifying terminal is located between the anode of the first diode 151 and the anode of the fourth diode 154, and the fourth rectifying terminal is located between the cathode of the fourth diode 154 and the anode of the third diode 153.
In this embodiment, the rectifying circuit 150 is a bridge rectifying circuit composed of four diodes, and can perform full-wave rectification on the pulse test signal to convert the ac pulse test signal into the dc pulse test signal. When the pulse test signal sent by the pulse generating device 110 is a positive voltage, the first diode 151 and the fourth diode 154 are turned on, the second diode 152 and the third diode 153 are turned off, the first pulse generating terminal 111 sends the pulse test signal to the first rectifying terminal, flows into the to-be-tested thyristor 120, the triggering unit 130 and the conduction indicating device 140 after passing through the first diode 151, and finally flows out from the fourth rectifying terminal to the second pulse generating terminal 112 after passing through the fourth diode 154. When the pulse test signal sent by the pulse generating device 110 is a negative voltage, the second diode 152 is turned on with the third diode 153, the first diode 151 is turned off with the fourth diode 154, the second pulse generating end 112 sends the pulse test signal to the fourth rectifying end, flows into the to-be-tested thyristor 120, the triggering unit 130 and the conduction indicating device 140 after passing through the third diode 153, and finally flows out from the first rectifying end to the first pulse generating end 111 after passing through the second diode 152.
In one possible implementation manner of this embodiment, the to-be-tested thyristor 120 is a unidirectional thyristor, the first end of the to-be-tested thyristor 120 corresponds to an anode of the unidirectional thyristor, the second end of the to-be-tested thyristor 120 corresponds to a cathode of the unidirectional thyristor, and the control end of the to-be-tested thyristor 120 corresponds to a control electrode of the unidirectional thyristor.
The anode of the unidirectional silicon controlled rectifier is connected with the second rectifying end, the triggering unit 130 is connected between the control electrode of the unidirectional silicon controlled rectifier and the cathode of the unidirectional silicon controlled rectifier, one end of the conduction indicating device 140 is connected with the cathode of the unidirectional silicon controlled rectifier, and the other end of the conduction indicating device 140 is connected with the third rectifying end.
Specifically, when the anti-interference capability of the unidirectional silicon controlled rectifier is tested, the bridge rectifier circuit is utilized to convert the alternating current pulse test signal sent by the pulse generating device 110 into a forward direct current pulse test signal with higher stability, and in addition, as the output current frequency of the bridge rectifier circuit is higher than the switching frequency of the unidirectional silicon controlled rectifier, the fluctuation of the unidirectional silicon controlled rectifier output can be reduced, so that the test result is more stable and reliable.
Referring to fig. 2 again, in one possible implementation manner of this embodiment, the triggering unit 130 includes a first resistor 131, where one end of the first resistor 131 is connected to the control electrode of the unidirectional thyristor, and the other end is connected to the cathode of the unidirectional thyristor.
In this embodiment, the first resistor 131 is used to control the conduction condition of the unidirectional silicon controlled rectifier, so as to change the trigger current of the unidirectional silicon controlled rectifier and improve the accuracy of the test result.
Referring to fig. 3 again, in one possible implementation manner of the present embodiment, the triggering unit 130 includes a first resistor 131, a second resistor 132, and a first capacitor 133. One end of the first resistor 131 is connected with the control electrode of the unidirectional silicon controlled rectifier, the other end of the first resistor is connected with the second resistor 132 in series, the second resistor 132 is connected with the cathode of the unidirectional silicon controlled rectifier, and the first capacitor 133 is connected with the second resistor 132 in parallel.
In this embodiment, the first resistor 131, the second resistor 132, and the first capacitor 133 are used for controlling the conduction condition of the unidirectional silicon controlled rectifier, so that the trigger current of the unidirectional silicon controlled rectifier can be changed, and the accuracy of the test result is improved, where the first capacitor 133 is used for filtering out the interference signal of the control electrode of the unidirectional silicon controlled rectifier.
Referring to fig. 4 and 5, in one possible implementation manner of this embodiment, the to-be-tested thyristor 120 is a bidirectional thyristor, the first end of the to-be-tested thyristor 120 corresponds to the first main electrode of the bidirectional thyristor, the second end of the to-be-tested thyristor 120 corresponds to the second main electrode of the bidirectional thyristor, and the control end of the to-be-tested thyristor 120 corresponds to the control electrode of the bidirectional thyristor.
The first main electrode of the triac is connected to the first pulse generating end 111, the trigger unit 130 is connected between the control electrode of the triac and the second main electrode of the triac, one end of the turn-on indicator 140 is connected to the second main electrode of the triac, and the other end of the turn-on indicator 140 is connected to the second pulse generating end 112.
In this embodiment, since the triac has a bidirectional conduction characteristic, the triac can be turned on and has a voltage regulating function no matter when the pulse test signal is positive or negative, so that the triac can be directly connected to the pulse generating device 110. The silicon controlled rectifier test circuit provided by the implementation can test the anti-interference capability of the bidirectional silicon controlled rectifier.
Referring again to fig. 4, in one possible implementation of the present embodiment, the triggering unit 130 includes a first resistor 131. One end of the first resistor 131 is connected with the first main electrode of the bidirectional thyristor, and the other end of the first resistor is connected with the second main electrode of the bidirectional thyristor.
In this embodiment, the first resistor 131 is used to control the conduction condition of the triac, so as to change the trigger current of the triac and improve the accuracy of the test result.
Referring to fig. 5 again, in one possible implementation manner of the present embodiment, the triggering unit 130 includes a first resistor 131, a second resistor 132, and a first capacitor 133. One end of the first resistor 131 is connected with the first main electrode of the bidirectional thyristor, the other end of the first resistor is connected with the second resistor 132 in series, the second resistor 132 is connected with the second main electrode of the bidirectional thyristor, and the first capacitor 133 is connected with the second resistor 132 in parallel.
In this embodiment, the first resistor 131, the second resistor 132, and the first capacitor 133 are used for controlling the conduction condition of the triac, so as to change the trigger current of the triac, where the first capacitor 133 is used for filtering out the interference signal of the control electrode of the triac, and improving the accuracy of the test result.
In a possible implementation of this embodiment, the conduction indicating apparatus 140 includes a bulb.
In this embodiment, the bulb is used as the on-indicating device 140, so that the switching condition of the bulb can be used to quickly determine, and the testing efficiency is higher.
In summary, in the silicon controlled rectifier test circuit provided in this embodiment, the pulse generating device sends a pulse test signal to the silicon controlled rectifier to be tested, so as to simulate the working state of the silicon controlled rectifier to be tested in different interference scenarios, the conduction indicating device indicates whether the test circuit is conducted, if the conduction indicating device indicates that the test circuit is conducted, it is indicated that the current rapid transient burst interference level exceeds the anti-interference level of the silicon controlled rectifier to be tested at this time, the voltage of the pulse generating device is adjusted down by a small margin until the conduction indicating device indicates that the test circuit is not conducted, and then the anti-interference level of the silicon controlled rectifier to be tested can be determined. The silicon controlled rectifier test circuit provided by the embodiment can be used for independently testing the anti-interference capability of the silicon controlled rectifier in a non-complete machine circuit, and compared with the prior art, the silicon controlled rectifier test circuit can be used for quickly and effectively testing the anti-interference capability of the silicon controlled rectifier, and the accuracy and reliability of an experimental result are high.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. The silicon controlled rectifier test circuit is characterized by comprising a pulse generating device, a silicon controlled rectifier to be tested, a triggering unit and a conduction indicating device;
the pulse generating device comprises a first pulse generating port and a second pulse generating port, the first end of the to-be-detected silicon controlled rectifier, the second end of the to-be-detected silicon controlled rectifier and the conduction indicating device are connected in series between the first pulse generating port and the second pulse generating port, and the triggering unit is connected between the control end of the to-be-detected silicon controlled rectifier and the second end of the to-be-detected silicon controlled rectifier;
the pulse generating device is used for generating a pulse test signal with variable voltage, the triggering unit is used for controlling the conduction condition of the to-be-tested controllable silicon, and the conduction indicating device is used for indicating whether the to-be-tested controllable silicon is conducted by mistake under the current voltage.
2. The thyristor test circuit according to claim 1, further comprising a rectifying circuit having a first rectifying terminal, a second rectifying terminal, a third rectifying terminal, and a fourth rectifying terminal;
the first pulse generating end is connected with the first rectifying end, the second rectifying end is connected with the silicon controlled rectifier to be tested, the third rectifying end is connected with the conduction indicating equipment, and the fourth rectifying end is connected with the second pulse generating end.
3. The scr test circuit as defined in claim 2, wherein the rectifying circuit comprises a first diode, a second diode, a third diode, and a fourth diode;
the cathode of the first diode is connected with the anode of the second diode, the cathode of the second diode is connected with the cathode of the third diode, the anode of the first diode is connected with the anode of the fourth diode, and the cathode of the fourth diode is connected with the anode of the third diode;
the first rectifying end is located between the cathode of the first diode and the anode of the second diode, the second rectifying end is located between the cathode of the second diode and the cathode of the third diode, the third rectifying end is located between the anode of the first diode and the anode of the fourth diode, and the fourth rectifying end is located between the cathode of the fourth diode and the anode of the third diode.
4. The silicon controlled rectifier test circuit according to claim 3, wherein the silicon controlled rectifier to be tested is a unidirectional silicon controlled rectifier, a first end of the silicon controlled rectifier to be tested corresponds to an anode of the unidirectional silicon controlled rectifier, a second end of the silicon controlled rectifier to be tested corresponds to a cathode of the unidirectional silicon controlled rectifier, and a control end of the silicon controlled rectifier to be tested corresponds to a control electrode of the unidirectional silicon controlled rectifier;
the anode of the unidirectional silicon controlled rectifier is connected with the second rectifying end, the trigger unit is connected between the control electrode of the unidirectional silicon controlled rectifier and the cathode of the unidirectional silicon controlled rectifier, one end of the conduction indicating device is connected with the cathode of the unidirectional silicon controlled rectifier, and the other end of the conduction indicating device is connected with the third rectifying end.
5. The thyristor test circuit according to claim 4, wherein said trigger cell comprises a first resistor;
one end of the first resistor is connected with the control electrode of the unidirectional silicon controlled rectifier, and the other end of the first resistor is connected with the cathode of the unidirectional silicon controlled rectifier.
6. The scr test circuit as defined in claim 4, wherein the trigger unit comprises a first resistor, a second resistor and a first capacitor;
one end of the first resistor is connected with the control electrode of the unidirectional silicon controlled rectifier, the other end of the first resistor is connected with the second resistor in series, the second resistor is connected with the cathode of the unidirectional silicon controlled rectifier, and the first capacitor is connected with the second resistor in parallel.
7. The silicon controlled rectifier test circuit according to claim 1, wherein the silicon controlled rectifier to be tested is a bidirectional silicon controlled rectifier, a first end of the silicon controlled rectifier to be tested corresponds to a first main electrode of the bidirectional silicon controlled rectifier, a second end of the silicon controlled rectifier to be tested corresponds to a second main electrode of the bidirectional silicon controlled rectifier, and a control end of the silicon controlled rectifier to be tested corresponds to a control electrode of the bidirectional silicon controlled rectifier;
the first main electrode of the bidirectional thyristor is connected with the first pulse generating end, the triggering unit is connected between the control electrode of the bidirectional thyristor and the second main electrode of the bidirectional thyristor, one end of the conduction indicating device is connected with the second main electrode of the bidirectional thyristor, and the other end of the conduction indicating device is connected with the second pulse generating end.
8. The thyristor test circuit according to claim 7, wherein said trigger cell comprises a first resistor;
one end of the first resistor is connected with the first main electrode of the bidirectional thyristor, and the other end of the first resistor is connected with the second main electrode of the bidirectional thyristor.
9. The thyristor test circuit according to claim 7, wherein the trigger unit comprises a first resistor, a second resistor, and a first capacitor;
one end of the first resistor is connected with the first main electrode of the bidirectional thyristor, the other end of the first resistor is connected with the second resistor in series, the second resistor is connected with the second main electrode of the bidirectional thyristor, and the first capacitor is connected with the second resistor in parallel.
10. The thyristor test circuit according to claim 1, wherein said turn-on indicator means comprises a light bulb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321802727.2U CN220543055U (en) | 2023-07-10 | 2023-07-10 | Silicon controlled rectifier test circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321802727.2U CN220543055U (en) | 2023-07-10 | 2023-07-10 | Silicon controlled rectifier test circuit |
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