CN220420597U - Heterojunction solar cell resistant to ultraviolet aging - Google Patents
Heterojunction solar cell resistant to ultraviolet aging Download PDFInfo
- Publication number
- CN220420597U CN220420597U CN202321215293.6U CN202321215293U CN220420597U CN 220420597 U CN220420597 U CN 220420597U CN 202321215293 U CN202321215293 U CN 202321215293U CN 220420597 U CN220420597 U CN 220420597U
- Authority
- CN
- China
- Prior art keywords
- ultraviolet
- solar cell
- absorbing layer
- ultraviolet absorbing
- heterojunction solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000032683 aging Effects 0.000 title claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 7
- 239000002313 adhesive film Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Abstract
The utility model discloses an ultraviolet aging resistant heterojunction solar cell, which comprises the following components sequentially arranged from front to back: a group of silver electrodes, an ultraviolet absorbing layer, a TCO film, an N-type amorphous silicon film, an intrinsic amorphous silicon film, an N-type monocrystalline silicon substrate, an intrinsic amorphous silicon film, a P-type amorphous silicon film, a TCO film and a group of silver electrodes; the ultraviolet absorbing layer that this application adopted deposits in heterojunction solar cell openly, and the ultraviolet absorbing layer has strong ultraviolet absorbing capacity, has strong and precipitous boundary absorption limit, and the ultraviolet absorbing layer can reduce the incidence of ultraviolet light to delay the ageing of encapsulation glued membrane, show the life of extension solar cell under the condition that does not influence the visible light incidence, have important meaning to improving heterojunction solar cell stability.
Description
Technical Field
The utility model belongs to the technical field of heterojunction solar cells, and particularly relates to an ultraviolet aging resistant heterojunction solar cell.
Background
With the continuous development of grid-connected photovoltaic systems, the output of photovoltaic modules is increased year by year, and the identification and diagnosis of the degradation mechanism of batteries and modules become vital to the performance of the photovoltaic systems. In this field, the problem of the light stability of the battery is paid attention to by many research units. Most crystalline silicon photovoltaic modules are packaged by using front glass, so that the incident spectrum less than 290nm can be reduced, but the modules packaged by glass and EVA still have attenuation under ultraviolet irradiation, and the ultraviolet irradiation can cause aging, degradation and cracking of EVA packaging adhesive films, so that the adhesive films turn yellow, the light transmittance of the adhesive films is reduced, the photoelectric conversion efficiency of a solar cell is reduced, and the service life of the solar cell is shortened. It is known that the shorter the wavelength, the higher the energy of the photon, so that in theory, the effect of ultraviolet radiation is greater than that of visible light on the cell, and it is important to solve the problem of ultraviolet attenuation.
A heterojunction solar cell resistant to ultraviolet aging was developed to solve the above-mentioned problems.
Disclosure of Invention
The utility model aims to solve the problems and designs a heterojunction solar cell resistant to ultraviolet aging.
The utility model realizes the above purpose through the following technical scheme:
a heterojunction solar cell resistant to ultraviolet aging, comprising:
two groups of silver electrodes;
an ultraviolet absorbing layer for reducing incidence of ultraviolet light;
two layers of transparent conductive films;
an N-type amorphous silicon thin film;
two layers of intrinsic amorphous silicon thin films;
an N-type monocrystalline silicon substrate;
a P-type amorphous silicon thin film;
the front surface is sequentially arranged from the back surface: the ultraviolet absorbing layer covers the transparent conductive film on the front surface.
Preferably, the ultraviolet absorbing layer is ZnO, znS, znTe, zn 3 N 2 、ZnSe、AlN、TiO 2 、TiN、TiNO x At least one of them.
Preferably, the thickness of the ultraviolet absorbing layer is 10-200nm.
Preferably, the ultraviolet absorbing layer is made of one of magnetron sputtering, atomic layer deposition, vacuum thermal evaporation and laser molecular beam epitaxy.
Preferably, the transparent conductive film is a tin-doped indium oxide film or a tungsten-doped indium oxide film or a titanium-doped indium oxide film or an aluminum-doped zinc oxide film.
The utility model has the beneficial effects that:
the ultraviolet absorbing layer that this application adopted deposits in heterojunction solar cell openly, and the ultraviolet absorbing layer has strong ultraviolet absorbing capacity, has strong and precipitous boundary absorption limit, and the ultraviolet absorbing layer can reduce the incidence of ultraviolet light to delay the ageing of encapsulation glued membrane, show the life of extension solar cell under the condition that does not influence the visible light incidence, have important meaning to improving heterojunction solar cell stability.
Drawings
FIG. 1 is a schematic structural diagram of the present application;
in the figure: 1-silver electrode; 2-an ultraviolet absorbing layer; 3-a transparent conductive film; 4-N type amorphous silicon film; a 5-intrinsic amorphous silicon thin film; a 6-N type monocrystalline silicon substrate; 7-P type amorphous silicon film.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present utility model more clear, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. It will be apparent that the described embodiments are some, but not all, embodiments of the utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "left", "right", etc. are based on the directions or positional relationships shown in the drawings, or the directions or positional relationships conventionally put in place when the inventive product is used, or the directions or positional relationships conventionally understood by those skilled in the art are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and therefore should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, terms such as "disposed," "connected," and the like are to be construed broadly, and for example, "connected" may be either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
The following describes specific embodiments of the present utility model in detail with reference to the drawings.
In the study of the optical properties of thin film materials,we have found ZnO, znS, znTe, zn N2, znSe, alN, tiO2, tiN, tiNO x The film materials have strong absorption in the ultraviolet band of 200-370nm and lower transmissivity, wherein the transmissivity of ZnO in the ultraviolet wavelength range is less than 1%, the film materials have strong ultraviolet absorption performance, almost all incident ultraviolet light is absorbed, and the film materials have strong boundary absorption edges near 370nm and the absorption edges are very steep. The transmittance increases dramatically from less than 1% to more than 60% in the range of about 28 nm. The strong uv absorption properties of these film materials enable them to function as good uv shielding materials.
Based on the above, the present application proposes a heterojunction solar cell resistant to ultraviolet aging, as shown in fig. 1, comprising:
two groups of silver electrodes 1;
an ultraviolet absorbing layer 2 for reducing incidence of ultraviolet light;
a two-layer transparent conductive film (TCO) 3;
an N-type amorphous silicon thin film 4;
two layers of intrinsic amorphous silicon thin films 5;
an N-type single crystal silicon substrate 6;
a P-type amorphous silicon thin film 7;
the front surface is sequentially arranged from the back surface: the ultraviolet absorbing layer 2 covers the front transparent conductive film, wherein the front transparent conductive film comprises a group of silver electrodes 1, a transparent conductive film 3, an N-type amorphous silicon film 4, a layer of intrinsic amorphous silicon film 5, an N-type monocrystalline silicon substrate 6, a layer of intrinsic amorphous silicon film 5, a P-type amorphous silicon film 7, a layer of transparent conductive film 3 and a group of silver electrodes 1. The ultraviolet absorbing layer 2 is deposited on the front surface of the heterojunction solar cell to achieve the purpose of reducing ultraviolet light incident on the surface of the heterojunction solar cell and further reducing the ultraviolet aging speed of the heterojunction solar cell.
In some embodiments, the ultraviolet absorbing layer is ZnO, znS, znTe, zn 3 N 2 、ZnSe、AlN、TiO 2 、TiN、TiNO x At least one of them.
In some embodiments, the thickness of the ultraviolet absorbing layer is 10-200nm.
In some embodiments, the ultraviolet absorbing layer is an ultraviolet absorbing layer made of one of magnetron sputtering, atomic layer deposition, vacuum thermal evaporation, and laser molecular beam epitaxy. The preparation method of the film material is various and is generally applicable to heterojunction solar cells, so that the ultraviolet absorption layer 2 has important significance for improving the stability of the heterojunction solar cells.
In some embodiments, the transparent conductive film is a tin-doped indium oxide film or a tungsten-doped indium oxide film or a titanium-doped indium oxide film or an aluminum-doped zinc oxide film.
The preparation method of the heterojunction solar cell comprises the following steps:
step 1, cleaning and texturing;
step 2, preparing an amorphous silicon film;
step 3, preparing a TCO film;
step 4, screen printing an electrode;
and 5, preparing the ultraviolet absorbing layer film.
The foregoing is merely a preferred embodiment of the present utility model, and it should be noted that it will be apparent to those skilled in the art that several modifications and variations can be made without departing from the technical principle of the present utility model, and these modifications and variations should also be regarded as the scope of the utility model.
Claims (4)
1. A heterojunction solar cell resistant to ultraviolet aging, comprising:
two groups of silver electrodes;
an ultraviolet absorbing layer for reducing incidence of ultraviolet light;
two layers of transparent conductive films;
an N-type amorphous silicon thin film;
two layers of intrinsic amorphous silicon thin films;
an N-type monocrystalline silicon substrate;
a P-type amorphous silicon thin film;
the front surface is sequentially arranged from the back surface: the ultraviolet absorbing layer covers the transparent conductive film on the front surface.
2. The ultraviolet aging resistant heterojunction solar cell of claim 1, wherein the thickness of the ultraviolet absorbing layer is 10-200nm.
3. The ultraviolet aging resistant heterojunction solar cell of claim 2, wherein the ultraviolet absorbing layer is an ultraviolet absorbing layer made of one of magnetron sputtering, atomic layer deposition, vacuum thermal evaporation, and laser molecular beam epitaxy.
4. The ultraviolet aging resistant heterojunction solar cell of claim 1, wherein the transparent conductive film is a tin-doped indium oxide film or a tungsten-doped indium oxide film or a titanium-doped indium oxide film or an aluminum-doped zinc oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321215293.6U CN220420597U (en) | 2023-05-19 | 2023-05-19 | Heterojunction solar cell resistant to ultraviolet aging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321215293.6U CN220420597U (en) | 2023-05-19 | 2023-05-19 | Heterojunction solar cell resistant to ultraviolet aging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220420597U true CN220420597U (en) | 2024-01-30 |
Family
ID=89653262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321215293.6U Active CN220420597U (en) | 2023-05-19 | 2023-05-19 | Heterojunction solar cell resistant to ultraviolet aging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220420597U (en) |
-
2023
- 2023-05-19 CN CN202321215293.6U patent/CN220420597U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1964181B1 (en) | Photovoltaic device and method of encapsulating | |
| RU2423755C2 (en) | Front contact with adjacent intermediate layer(s) for use in photoelectric devices and method of making said contact | |
| US20090090412A1 (en) | Photovoltaic device and method for encapsulating | |
| US20080105298A1 (en) | Front electrode for use in photovoltaic device and method of making same | |
| US20080105293A1 (en) | Front electrode for use in photovoltaic device and method of making same | |
| US20090165849A1 (en) | Transparent solar cell module | |
| CN109004053A (en) | The crystalline silicon of double-side photic/film silicon heterojunction solar battery and production method | |
| JP2015039020A (en) | Improvement of elements capable of collecting light | |
| CN101499492B (en) | Transparent solar cell module | |
| WO2009073058A2 (en) | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same | |
| CN106784040A (en) | A kind of CIGS based thin film solar cells and preparation method thereof | |
| KR101497955B1 (en) | Light transmitting back contact and solar cell using the same, and methods of manufacturing them | |
| US20130312829A1 (en) | Photoelectric conversion element | |
| US20110023951A1 (en) | Photovoltaic cell substrate, method of manufacturing the photovoltaic cell substrate, and photovoltaic cell | |
| CN207282509U (en) | The crystalline silicon of double-side photic/film silicon heterojunction solar battery | |
| US20140360576A1 (en) | Intrinsically Semitransparent Solar Cell And Method Of Controlling Transmitted Color Spectrum | |
| KR101140731B1 (en) | See-through type photovoltaic module including 3-dimensional photonic crystal, manufacturing method thereof, and insulating glass including the same | |
| CN220420597U (en) | Heterojunction solar cell resistant to ultraviolet aging | |
| KR101814821B1 (en) | Solar cell module | |
| CN102280503A (en) | Transmitting-type thin film solar battery | |
| KR20110077923A (en) | Front electrode for a thin film silicone solar cell and a thin film silicone solar cell comprising the same | |
| WO2024036556A1 (en) | Solar module | |
| KR20180122302A (en) | Solar cell module having half-mirror | |
| JP2011187495A (en) | Solar battery module | |
| CN220823659U (en) | Packaging glass of laminated battery assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |