CN220306248U - IGBT terminal connection row heat conduction structure - Google Patents
IGBT terminal connection row heat conduction structure Download PDFInfo
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- CN220306248U CN220306248U CN202321854539.4U CN202321854539U CN220306248U CN 220306248 U CN220306248 U CN 220306248U CN 202321854539 U CN202321854539 U CN 202321854539U CN 220306248 U CN220306248 U CN 220306248U
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- connecting plate
- terminal
- copper bar
- igbt
- positive electrode
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910052802 copper Inorganic materials 0.000 claims abstract description 84
- 239000010949 copper Substances 0.000 claims abstract description 84
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 6
- 229920002799 BoPET Polymers 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000013021 overheating Methods 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The IGBT terminal connecting bar heat conduction structure comprises a radiator, an IGBT module in a flat packaging mode, an anode copper bar and a cathode copper bar, wherein an anode connecting plate and a cathode connecting plate are respectively formed on the anode copper bar and the cathode copper bar, and the outer side face of the cathode connecting plate is overlapped with a cathode terminal of the IGBT module; the method is characterized in that: and a square copper block is welded on the outer side surface of the positive electrode connecting plate, and the outer surface of the square copper block is lapped with the positive electrode terminal of the IGBT module. The heat conducting copper bar is connected with a negative terminal of the IGBT module and the radiator; the positive electrode and the negative electrode connecting plate can be plated with silver. According to the IGBT terminal connection row heat conduction structure, the contact area of the square copper block and the positive terminal is larger, the overlap joint area is further increased, the heating value is reduced, and the problem that the IGBT module body is invalid and damaged due to terminal overheating of the IGBT module in a flat packaging mode is solved.
Description
Technical Field
The utility model relates to an IGBT terminal connection row heat conduction structure, in particular to an IGBT terminal connection row heat conduction structure.
Background
With the progress of technology, the utilization rate of the IGBT module is higher and higher, so that the heating quantity of the connecting row at the terminal of the IGBT module is increased, and if the heat conduction treatment is not carried out on the terminal of the IGBT module, the module is overheated to cause failure and damage; when the applied current is large, the existing flat package IGBT module has the following limiting factors, including: 1, the size of a single terminal of a flat package IGBT module body is less than or equal to 12mm (length is equal to width), and 2), the temperature requirement at the terminal of the flat package IGBT module body is less than or equal to 110 ℃; because the size of the flat package IGBT terminal is limited, and the use temperature of the IGBT terminal is limited, when the application current of the flat package IGBT is high, the temperature of the IGBT terminal is higher than 110 ℃, and if the heat conduction treatment of the terminal is not performed, the IGBT module body is invalid and damaged due to overheat of the terminal.
Disclosure of Invention
In order to overcome the defects of the technical problems, the utility model provides a heat conduction structure of an IGBT terminal connection row.
The IGBT terminal connecting bar heat conduction structure comprises a radiator, an IGBT module in a flat packaging mode, an anode copper bar and a cathode copper bar, wherein a radiating surface of the IGBT module is fixed on a heat absorption surface of the radiator, the anode copper bar and the cathode copper bar are respectively provided with an anode connecting plate and a cathode connecting plate which are respectively connected with an anode terminal and a cathode terminal of the IGBT module, and the outer side surface of the cathode connecting plate is in lap joint with the cathode terminal of the IGBT module; the method is characterized in that: and a square copper block is welded on the outer side surface of the positive electrode connecting plate, and the outer surface of the square copper block is lapped with the positive electrode terminal of the IGBT module.
The IGBT terminal connection bar heat conduction structure comprises a heat conduction copper bar, wherein one end of the heat conduction copper bar is fixed with a negative terminal of an IGBT module, and the other end of the heat conduction copper bar is fixed on a heat absorption surface of a radiator.
According to the IGBT terminal connection row heat conduction structure, the positive electrode connection plate and the negative electrode connection plate are plated with silver layers, and the thickness of the silver layers is more than or equal to 10 mu m.
According to the IGBT terminal connecting bar heat conduction structure, PET films with insulation function are arranged between the positive electrode copper bar and the negative electrode copper bar and between the positive electrode connecting plate and the negative electrode connecting plate, and the positive electrode copper bar, the negative electrode copper bar, the positive electrode connecting plate and the negative electrode connecting plate are in close contact with the PET films.
According to the IGBT terminal connection row heat conduction structure, through holes for connecting screws to pass through are formed in the positive electrode connection plate and the negative electrode connection plate, and through holes aligned with the through holes in the positive electrode connection plate are formed in the center of the square copper block.
According to the IGBT terminal connection bar heat conduction structure, copper columns are riveted on through holes of the positive electrode connection plate and the negative electrode connection plate, and through holes for connecting screws to pass through are formed in the copper columns.
The beneficial effects of the utility model are as follows: according to the IGBT terminal connecting bar heat conduction structure, the IGBT module in the flat packaging form is fixed on the radiator, the outer side face of the negative electrode connecting plate on the negative electrode copper bar is overlapped with the negative electrode terminal of the IGBT module, and the square copper block welded on the positive electrode connecting plate on the positive electrode copper bar is overlapped with the positive electrode terminal of the IGBT module, so that compared with the existing method that the positive electrode connecting plate is overlapped with the positive electrode terminal of the IGBT module through the riveted round copper column, the contact area of the square copper block and the positive electrode terminal is larger, the heat productivity of the square copper block and the positive electrode connecting plate in the welding form is smaller than that of the riveted round copper column, the overlapping area is further increased, the heat productivity is reduced, and the problem that the IGBT module in the flat packaging form is invalid and damaged due to terminal overheating is solved.
Further, a heat conducting copper bar is arranged between the negative terminal of the IGBT module and the radiator, and two ends of the heat conducting copper bar are respectively connected with the negative terminal and the radiator, so that heat generated by the negative terminal of the IGBT module is quickly transferred to the radiator through the heat conducting copper bar, heat dissipation of the negative terminal is realized, and the heat of the negative terminal of the IGBT module is maintained below a set temperature (110 ℃); meanwhile, after heat generated by the positive terminal of the IGBT module is transferred to the positive connecting plate, part of the heat is transferred to the negative connecting plate by the positive connecting plate through the PET film, and then the heat is transferred to the radiator by the negative connecting plate through the negative terminal of the IGBT module and the heat conducting copper bar, so that heat dissipation of the negative terminal and the positive terminal of the IGBT module is further ensured, and the temperature of the negative terminal and the temperature of the positive terminal are maintained in a reasonable range.
Further, by plating silver layers with the height of more than or equal to 10 mu m on the positive electrode connecting plate and the negative electrode connecting plate, the resistance of the joint surface of the positive electrode terminal and the square copper block of the IGBT module and the resistance of the joint surface of the negative electrode terminal and the negative electrode connecting plate can be maintained at a lower resistance value (such as below 5 mu omega) by utilizing better electric conductivity and better heat conductivity of metal silver than copper, so that the heat generated by the negative electrode and the positive electrode terminal can be rapidly dissipated.
Drawings
Fig. 1 is a front view of a heat conduction structure of an IGBT terminal connection row of the utility model;
fig. 2 is a perspective view of a heat conduction structure of an IGBT terminal connection row of the utility model;
fig. 3 is a schematic diagram of a partial structure of a heat conduction structure of an IGBT terminal connection row according to the present utility model.
In the figure: 1 radiator, 2 IGBT module, 3 anodal copper bars, 4 negative pole copper bars, 5 PET film, 6 anodal even board, 7 negative pole even board, 8 square copper billet, 9 heat conduction copper bars, 10 through-holes, 11 copper posts.
Description of the embodiments
The utility model will be further described with reference to the drawings and examples.
As shown in fig. 1, fig. 2 and fig. 3, a front view, a perspective view and a partial structure schematic diagram of the IGBT terminal connection row heat conduction structure of the present utility model are respectively provided, the illustrated IGBT terminal connection row heat conduction structure is composed of a radiator 1, an IGBT module 2, a positive copper bar 3, a negative copper bar 4, a PET film 5, a positive connection plate 6, a negative connection plate 7 and a square copper block 8, the IGBT module 2 is in a flat package form, a heat dissipation surface of the IGBT module 2 is fixed on a heat absorption surface of the radiator 1, and the radiator 1 takes away heat generated in the operation process of the IGBT module 2 so as to realize cooling of the IGBT module 2. The IGBT module 2 in the form of a flat package is limited in size, requiring the temperature at the positive and negative terminals of the IGBT module 2 to be no greater than 110 ℃.
The positive electrode copper bar 3 and the negative electrode copper bar 4 are distributed up and down, and the PET film 5 with an insulation function is arranged between the positive electrode copper bar 3 and the negative electrode copper bar 4, so that the positive electrode copper bar 3 and the negative electrode copper bar 4 are stacked together, and insulation between the positive electrode copper bar 3 and the negative electrode copper bar 4 is ensured. The positive electrode copper bar 3 is formed with a positive electrode connecting plate 6 connected with the positive electrode terminal of the IGBT module 2, the negative electrode copper bar 4 is formed with a negative electrode connecting plate 7 connected with the negative electrode terminal of the IGBT module 2, the positive electrode connecting plate 6 and the positive electrode copper bar 3 are integrated, the negative electrode connecting plate 7 and the negative electrode copper bar 4 are also integrated, and the positive electrode connecting plate 6 and the negative electrode connecting plate 7 are formed by bending by 90 degrees under normal conditions.
The outer side surface of the negative electrode connecting plate 7 is overlapped with the negative electrode terminal of the IGBT module 2, a square copper block 8 is fixed on the outer side surface of the positive electrode connecting plate 6, the square copper block 8 is fixed on the outer side surface of the positive electrode connecting plate 6 in a welded mode, and the outer surface of the square copper block 8 is overlapped with the positive electrode terminal of the IGBT module 2. The square copper block 8 is lapped with the positive electrode terminal of the IGBT module 2. Compared with the existing circular copper column which adopts the positive terminal to overlap with the circular copper column riveted on the positive connecting plate 6, the contact area of the positive terminal and the square copper block 8 is increased, the welded square copper block 8 and the positive connecting plate 6 form an integral form, compared with the existing circular copper column riveted, the heat productivity is smaller, the overlap area is further increased, the heat productivity is reduced, and the temperature of the positive terminal of the IGBT module 2 is controlled below 110 ℃.
In order to ensure that the negative terminal of the IGBT module 2 can also obtain good heat dissipation, the temperature at the negative terminal is controlled within a reasonable temperature (110 ℃), a heat conduction copper bar 9 is arranged between the negative terminal of the IGBT module 2 and the radiator 1, one end of the heat conduction copper bar 9 is fixed with the negative terminal, and the other end is fixed on the heat absorption surface of the radiator 1. Like this, in the working process of IGBT module 2, the heat that produces on its negative terminal directly conducts to radiator 1 through heat conduction copper bar 9, has effectively realized the heat dissipation cooling to the negative terminal department of IGBT module 2. Meanwhile, after the heat generated by the positive terminal of the IGBT module 2 is transferred to the positive connecting plate 6, the heat on the positive connecting plate 6 is transferred to the negative connecting plate 7 through the PET film 5, and then transferred to the radiator 1 through the negative terminal of the IGBT module 2 and the heat conducting copper bar 9, so that the heat conducting copper bar 9 can also realize partial heat dissipation of the heat generated by the positive terminal of the IGBT module 2.
In order to further improve heat dissipation and reduce the overlap resistance of the overlap joint surfaces of the positive electrode connecting plate 6 and the negative electrode connecting plate 7 and the positive electrode terminal and the negative electrode terminal of the IGBT module 2, silver layers are plated on the outer surfaces of the positive electrode connecting plate 6 and the negative electrode connecting plate 7, the thickness of the silver layers is more than or equal to 10 mu m, and the metal silver has higher conductivity and better heat conduction performance than copper, so that the heat dissipation of the positive electrode terminal and the negative electrode terminal of the IGBT module 2 is further improved, and the overlap resistance of the overlap joint surfaces of the positive electrode connecting plate 6 and the positive electrode terminal of the IGBT module 2 and the overlap joint resistance of the overlap joint surfaces of the negative electrode connecting plate 7 and the negative electrode terminal of the IGBT module 2 can be reduced to below 5 mu omega.
In order to realize firm connection of the positive connecting plate 6 and the negative connecting plate 7 with the positive terminal and the negative terminal on the IGBT module 2 respectively, through holes 10 for allowing connecting screws to pass through are formed in the positive connecting plate 6 and the negative connecting plate 7, and through holes aligned with the through holes on the positive connecting plate 6 are formed in the center of the square copper block 8. Copper columns 11 are arranged on the outer side surfaces of the positive electrode connecting plate 6 and the negative electrode connecting plate 7, and the copper columns 11 are fixed on through holes on the positive electrode connecting plate 6 or the negative electrode connecting plate 7 in a riveting mode. The center of the copper pillar 11 is a through hole through which a connection screw passes. In this way, by inserting the connection screw into the through hole 10 and screwing into the positive and negative terminals of the IGBT module 2, firm connection of the positive and negative terminals of the IGBT module 2 with the positive and negative connection plates 6 and 7 can be achieved.
Claims (6)
1. The utility model provides a IGBT terminal connection row heat conduction structure, including radiator (1), adoption flat encapsulation form IGBT module (2), anodal copper bar (3) and negative pole copper bar (4), the radiating surface of IGBT module is fixed in the heat-absorbing face of radiator, is formed with anodal link plate (6) and negative pole link plate (7) that are connected with the anodal terminal of IGBT module respectively on anodal copper bar, the negative pole copper bar respectively, the lateral surface of negative pole link plate overlaps with the negative pole terminal of IGBT module; the method is characterized in that: and a square copper block (8) is welded on the outer side surface of the positive electrode connecting plate, and the outer surface of the square copper block is lapped with the positive electrode terminal of the IGBT module.
2. The IGBT terminal connection row heat conduction structure according to claim 1, wherein: the heat-conducting copper bar (9) is included, one end of the heat-conducting copper bar is fixed with a negative terminal of the IGBT module (2), and the other end of the heat-conducting copper bar is fixed on a heat-absorbing surface of the radiator (1).
3. The IGBT terminal connection row heat conduction structure according to claim 1 or 2, characterized in that: silver layers are plated on the positive electrode connecting plate (6) and the negative electrode connecting plate (7), and the thickness of the silver layers is more than or equal to 10 mu m.
4. The IGBT terminal connection row heat conduction structure according to claim 1 or 2, characterized in that: PET films (5) with insulation function are arranged between the positive electrode copper bar (3) and the negative electrode copper bar (4) and between the positive electrode connecting plate (6) and the negative electrode connecting plate (7), and the positive electrode copper bar, the negative electrode copper bar, the positive electrode connecting plate and the negative electrode connecting plate are in close contact with the PET films.
5. The IGBT terminal connection row heat conduction structure according to claim 1 or 2, characterized in that: the positive electrode connecting plate (6) and the negative electrode connecting plate (7) are respectively provided with a through hole (10) for connecting a screw to pass through, and the center of the square copper block (8) is provided with a through hole aligned with the through holes on the positive electrode connecting plate.
6. The IGBT terminal connection row heat conductive structure according to claim 5, wherein: copper columns (11) are riveted on through holes (10) of the positive connecting plate (6) and the negative connecting plate (7), and through holes for connecting screws to pass through are formed in the copper columns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321854539.4U CN220306248U (en) | 2023-07-14 | 2023-07-14 | IGBT terminal connection row heat conduction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321854539.4U CN220306248U (en) | 2023-07-14 | 2023-07-14 | IGBT terminal connection row heat conduction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220306248U true CN220306248U (en) | 2024-01-05 |
Family
ID=89373673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321854539.4U Active CN220306248U (en) | 2023-07-14 | 2023-07-14 | IGBT terminal connection row heat conduction structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220306248U (en) |
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2023
- 2023-07-14 CN CN202321854539.4U patent/CN220306248U/en active Active
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