CN220265842U - Substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technology - Google Patents
Substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technology Download PDFInfo
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- CN220265842U CN220265842U CN202222834766.2U CN202222834766U CN220265842U CN 220265842 U CN220265842 U CN 220265842U CN 202222834766 U CN202222834766 U CN 202222834766U CN 220265842 U CN220265842 U CN 220265842U
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- single crystal
- substrate
- crystal diamond
- chemical vapor
- vapor deposition
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- 239000013078 crystal Substances 0.000 title claims abstract description 83
- 239000010432 diamond Substances 0.000 title claims abstract description 75
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 16
- 238000005516 engineering process Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000000605 extraction Methods 0.000 claims description 5
- 229910001369 Brass Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000010951 brass Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000002401 inhibitory effect Effects 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 241000139599 Itaxia Species 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 150000002431 hydrogen Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a substrate stage for growing single crystal diamond by microwave plasma chemical vapor deposition technology, which comprises the following steps: the substrate is arranged at the upper end of the base, and through holes are formed in the substrate at positions opposite to the conical grooves. The beneficial effects of the utility model are as follows: the high-quality monocrystalline diamond can be grown in batches, the growth efficiency is improved, and in the growth process, the substrate of the substrate table needs to be replaced so as to keep the flat state of the growth surface of the monocrystalline diamond seed crystal, so that the impurity phases of the bottom and the side surface of the monocrystalline diamond can be remarkably reduced, and the phenomenon that the monocrystalline diamond is difficult to take out from the through hole is avoided.
Description
Technical Field
The utility model relates to the field of crystal growth, in particular to a substrate table for growing monocrystalline diamond by a microwave plasma chemical vapor deposition technology.
Background
The excellent physicochemical properties of single crystal diamond make it possess wide application prospects in numerous fields, reference: ta l ai re A, achard J, boussad i A, et a l.high qua l ity th ick CVD d i amond fi lms homoepitax ia l ly grown on (111) -or iented substrates [ J ]. Diamond & Re l ated Mater i a l s,2014,41 (1): 34-40, wu G, chen M H, li ao J.the i nf l uence of recess depth and crysta l l ograph ic or ientat ion of seed s i des on homoep itaxia l growth of CVD s i ng l e crysta l d i amonds [ J ]. Di amond & Re l ated Mater ia l s,2016,65:144-151, however, the number of high quality natural diamonds is rare, thereby making it difficult to meet the needs of industrial application fields, and thus, it is of great importance to the development of technology for artificially mass-producing high quality single crystal diamonds.
Among the numerous methods for synthesizing single crystal diamond, microwave plasma chemical vapor deposition (M icrowave p l asma chemi ca l vapor depos it ion, MPCVD) is considered as the preferred method for preparing high quality single crystal diamond due to its characteristics of electrodeless discharge, concentrated plasma energy, clean deposition environment, etc., reference is made to: wi l email B, ta l ai re A, achard J.Opt ica l study of defects i n th ick undoped CVD synthet i c d i amond l ayers [ J ]. Diamond & Re l ated Mater i a l s,2014,41 (1): 25-33. The main idea of preparing high-quality monocrystalline diamond by MPCVD technology is to utilize high-energy density plasma balls formed around monocrystalline substrate, ionize carbon-containing working gas, and combine with proper substrate temperature to grow C atoms onto monocrystalline substrate in the form of sp3 hybridization to realize growth of monocrystalline diamond.
In batch growth of single crystal diamond using MPCVD techniques, substrate table design is critical, reference: mokuno Y, chayahara A, soda Y, et al, a.Synthesis i z i ng s i ngl e-crysta l d iamond by repet it i on of h i gh rate homoepitax ia l growth by microwave p l asma CVD [ J ]. Diamond & Re l ated Mater ia l s,2005,14 (11-12): 1743-1746.1. Substrate tables commonly used for epitaxial growth of single crystal diamond are divided into two types, namely open type and closed type, wherein the open type substrate table is relatively simple in design, but the defects of uneven surface, reduced size, difficult polishing and the like of the grown single crystal diamond are caused by increasing the growth difference between the middle area and the edge area of the single crystal diamond sheet. Compared with the prior art, the closed substrate table is difficult to process, but the surface flatness of the single crystal diamond can be effectively improved, the size of the single crystal diamond is ensured, and the later polishing difficulty is reduced. Therefore, the closed substrate table is fully and reasonably designed, and the batch growth of single crystal diamond is facilitated.
One of the problems encountered in the practical application process of the closed substrate table is that a large amount of impurity phases such as graphite, polycrystalline diamond and the like are easily deposited on the bottom surface of the monocrystalline substrate and the side surface contacted with the grooves in the growth process, so that the growth environment of monocrystalline diamond particles is changed, the quality of the monocrystalline diamond is reduced, and meanwhile, the phenomenon that the monocrystalline diamond grown for a long time is difficult to take out from the grooves can occur, so that the difficulty of post-treatment is increased.
Disclosure of Invention
The utility model aims to provide a substrate table for growing monocrystalline diamond by a microwave plasma chemical vapor deposition technology, which overcomes the defects in the prior art.
The technical scheme for solving the technical problems is as follows: a substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique, comprising:
the substrate is arranged at the upper end of the base, and through holes are formed in the substrate at positions opposite to the conical grooves.
On the basis of the technical scheme, the utility model can be improved as follows.
Further, the gap between the substrate and the base is less than 0.1mm.
Further, the diameter of the extraction opening at the bottom of the conical groove is more than or equal to 1mm; the diameter of the air inlet on the side wall of the conical groove is more than or equal to 1mm.
Further, the through hole is a square hole, and the conical groove is a square conical groove; the width of the through hole is 0-0.3 mm larger than that of the single crystal diamond seed crystal; the depth of the through hole is 0.1 mm-0.5 mm larger than the thickness of the single crystal diamond seed crystal; the maximum width of the conical groove is 0-0.3 mm smaller than the width of the single crystal diamond seed crystal, and the depth of the conical groove is more than or equal to 1/2 of the width of the through hole.
Further, the substrate is a molybdenum wafer with a smooth surface; the base station is a metal material.
Further, the material of the base is red copper, brass or stainless steel.
Further, the substrate and the base are combined by a locating pin, a locating groove or a threaded connection mode.
The beneficial effects of the utility model are as follows:
placing a single crystal diamond seed crystal in the through hole and keeping the growth surface of the single crystal diamond seed crystal flat;
the air inlet flow channel and the air exhaust flow channel are used for introducing gas for inhibiting the generation of impurity phases so as to reduce the generation of the impurity phases at the bottom and the side surfaces of the single crystal diamond seed crystal;
the substrate table and the method can be used for growing high-quality monocrystalline diamond in batches, the growth efficiency is improved, and in the growth process, the substrate of the substrate table is required to be replaced so as to keep the flat state of the growth surface of the monocrystalline diamond seed crystal, so that the impurity phases at the bottom and the side surface of the monocrystalline diamond can be remarkably reduced, and the phenomenon that the monocrystalline diamond is difficult to take out from a through hole is avoided.
Drawings
FIG. 1 shows a microwave plasma chemical vapor phase according to the present utility model schematic structural diagram of a substrate table for growing single crystal diamond by deposition technique.
In the figure, 1, a base, 110, a conical groove, 120, an air extraction runner, 130, an air inlet runner, 2, a substrate, 210 and a through hole.
Detailed Description
The principles and features of the present utility model are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the utility model and are not to be construed as limiting the scope of the utility model.
As shown in fig. 1, a substrate stage for growing single crystal diamond by microwave plasma chemical vapor deposition technique, comprising: a base 1 and a substrate 2;
the upper end surface of the base 1 is provided with a plurality of conical grooves 110, and the conical grooves 110 on the base 1 are uniformly distributed from the center to the edge area in general;
the base 1 is internally provided with an air suction flow passage 120 communicated with the conical groove 110 through the bottom of the conical groove 110, the air suction flow passage 120 is generally provided with an air inlet port and a plurality of air outlet ports, and each air outlet port is respectively communicated with the plurality of conical grooves 110 in a one-to-one correspondence manner;
the inside of the base 1 is provided with an air inlet channel 130 communicated with the conical groove 110 through the side wall of the conical groove 110, the air inlet channel 130 is generally provided with an air inlet port and a plurality of air outlet ports, and each air outlet port is respectively communicated with the plurality of conical grooves 110 in a one-to-one correspondence manner;
the air extraction flow channel 120 and the air inlet flow channel 130 are used for forming proper atmosphere around the seed crystal and at the bottom so as to inhibit the generation of impurity phases;
a substrate 2 is arranged at the upper end of the base 1, and a through hole 210 is arranged on the substrate 2 at a position opposite to each conical groove 110;
the single crystal diamond seed crystal is placed in the through hole 210 for growth, and the atmosphere at the bottom and the side wall of the single crystal diamond seed crystal is controlled by adjusting the flow rate of the air inlet gas and the air pumping speed of air pumping in the growth process so as to fully inhibit the generation of impurity phases.
As a further improvement of the above-described technical solution, the gap between the substrate 2 and the base 1 is smaller than 0.1mm, by which it is ensured that no discharge occurs between the substrate 2 and the base 1.
As a further improvement of the above technical solution, the diameter of the air extraction opening at the bottom of the conical groove 110 is greater than or equal to 1mm; the diameter of the air inlet on the side wall of the conical groove 110 is larger than or equal to 1mm, and through the scheme, the bottom and the side surface of the single crystal diamond seed crystal are provided with the atmosphere which is suitable for inhibiting the generation of impurity phases.
As a further improvement of the above technical solution, the through hole 210 is a square hole, and the width of the through hole 210 is 0-0.3 mm larger than the width of the single crystal diamond seed crystal; the depth of the through hole 210 is 0.1 mm-0.5 mm greater than the thickness of the single crystal diamond seed crystal, and by the scheme, the single crystal diamond seed crystal can be placed in the through hole 210, and the edge of the single crystal diamond seed crystal does not generate edge discharge;
the conical groove 110 is a square conical groove 110; the maximum width of the conical groove 110 is 0-0.3 mm smaller than that of the single crystal diamond seed crystal, the depth of the conical groove 110 is 1/2 or more of the width of the through hole 210, and by adopting the scheme, the bottom and the side surface of the single crystal diamond seed crystal are immersed in the atmosphere which is favorable for inhibiting the generation of impurity phases
As a further improvement of the technical scheme, the substrate 2 is a molybdenum wafer with a smooth surface; the base 1 is a metal material.
As a further improvement of the above technical solution, the material of the base 1 is red copper, brass or stainless steel.
As a further improvement of the above technical solution, the substrate 2 and the base 1 are combined by a positioning pin, a positioning groove or a threaded connection.
The using method comprises the following steps:
s1, placing a substrate table in a reaction cavity of MPCVD, placing a single crystal diamond seed crystal in a through hole 210, and vacuumizing the reaction cavity of MPCVD;
s2, introducing hydrogen from an air inlet of the reaction cavity, starting microwaves, adjusting microwave power, exciting a plasma ball, adjusting the air pressure of the reaction cavity, and cleaning the monocrystalline diamond seed crystal;
s3, introducing oxygen from an air inlet of the reaction cavity, adjusting the air pressure of the reaction cavity, increasing microwave power, and etching the surface of the monocrystalline diamond seed crystal to remove the defect on the surface of the monocrystalline diamond seed crystal;
s4, stopping oxygen introduction, introducing hydrocarbon mixed gas from an air inlet of the reaction cavity, simultaneously introducing gas which is favorable for inhibiting generation of impurity phases from an air inlet flow channel 130 of the substrate table, and opening an air exhaust flow channel 120 of the substrate table;
s5, adjusting microwave power and deposition air pressure, controlling the air inlet flow of the substrate table air inlet flow channel 130 and the air exhaust speed of the air exhaust flow channel 120, and performing epitaxial growth of the single crystal diamond seed crystal while inhibiting the generation of impurities at the bottom and on the side surfaces of the single crystal diamond seed crystal;
s6, stopping growing and replacing the substrate 2 when the thickness of the single crystal diamond seed crystal is consistent with the thickness of the through hole 210, wherein the width of the through hole 210 of the replaced substrate 2 is 0-0.3 mm larger than that of the single crystal diamond seed crystal, and the depth of the through hole 210 is 0.1-0.5 mm larger than that of the single crystal diamond seed crystal;
and S7, repeating the steps, continuing epitaxial growth of the monocrystalline diamond seed crystal until the thickness meets the requirement, and stopping growth.
As a further improvement of the technical scheme, the gas which is favorable for inhibiting the generation of the impurity phase is hydrogen, argon or mixed gas of the hydrogen and the argon.
As a further improvement of the above technical scheme, the hydrocarbon mixed gas is a mixed gas of hydrogen and methane.
The substrate table designed by the utility model can meet the requirement of growing single crystal diamond in batches by a microwave plasma chemical vapor deposition technology, so that the obtained single crystal diamond has a relatively flat surface, and simultaneously, the impurity phases of the bottom and the side surfaces of the single crystal diamond particles are effectively reduced.
While embodiments of the present utility model have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the utility model, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the utility model.
Claims (7)
1. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique, comprising: base station (1) and substrate (2), offer a plurality of toper recesses (110) on the up end of base station (1), inside suction runner (120) that are had through the tank bottom of toper recess (110) and toper recess (110) intercommunication of base station (1), inside intake runner (130) that are had through the lateral wall of toper recess (110) and toper recess (110) intercommunication of base station (1), substrate (2) are arranged in the upper end of base station (1), set up through-hole (210) in just to each toper recess (110) department on substrate (2).
2. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique according to claim 1, wherein: the gap between the substrate (2) and the base (1) is smaller than 0.1mm.
3. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique according to claim 1, wherein: the diameter of an extraction opening at the bottom of the conical groove (110) is more than or equal to 1mm; the diameter of an air inlet on the side wall of the conical groove (110) is more than or equal to 1mm.
4. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique according to claim 1, wherein: the through hole (210) is a square hole, and the conical groove (110) is a square conical groove (110); the width of the through hole (210) is 0-0.3 mm larger than the width of the single crystal diamond seed crystal; the depth of the through hole (210) is 0.1 mm-0.5 mm larger than the thickness of the single crystal diamond seed crystal; the maximum width of the conical groove (110) is 0-0.3 mm smaller than the width of the single crystal diamond seed crystal, and the depth of the conical groove (110) is more than or equal to 1/2 of the width of the through hole (210).
5. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique according to claim 1, wherein: the substrate (2) is a molybdenum wafer with a smooth surface; the base (1) is made of a metal material.
6. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique according to claim 1, wherein: the base (1) is made of copper, brass or stainless steel.
7. A substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technique according to claim 1, wherein: the substrate (2) and the base (1) are combined by a locating pin, a locating groove or a threaded connection mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222834766.2U CN220265842U (en) | 2022-10-27 | 2022-10-27 | Substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222834766.2U CN220265842U (en) | 2022-10-27 | 2022-10-27 | Substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technology |
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| CN220265842U true CN220265842U (en) | 2023-12-29 |
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| CN202222834766.2U Active CN220265842U (en) | 2022-10-27 | 2022-10-27 | Substrate table for growing single crystal diamond by microwave plasma chemical vapor deposition technology |
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