CN220156965U - Perovskite laminated solar cell structure - Google Patents
Perovskite laminated solar cell structure Download PDFInfo
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- CN220156965U CN220156965U CN202321063873.8U CN202321063873U CN220156965U CN 220156965 U CN220156965 U CN 220156965U CN 202321063873 U CN202321063873 U CN 202321063873U CN 220156965 U CN220156965 U CN 220156965U
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model provides a perovskite laminated solar cell structure. The perovskite stacked solar cell structure comprises: a crystalline silicon bottom cell having a first surface; a perovskite top cell disposed on the first surface, the perovskite top cell having a top electrode on a side thereof remote from the first surface; and a silicon nitride layer covering a portion of the top electrode. In the structure, the perovskite laminated solar cell structure has the characteristics of high temperature resistance, moisture resistance, corrosion resistance and the like due to the characteristics of high temperature resistance, moisture resistance, corrosion resistance, compact structure, high strength and the like, so that the aim of improving the structural stability of the perovskite laminated solar cell through the silicon nitride layer is fulfilled.
Description
Technical Field
The utility model relates to the technical field of perovskite solar cells, in particular to a perovskite laminated solar cell structure.
Background
Perovskite solar cells are one of the third generation solar cells, which include compounds of perovskite structure, most commonly hybridized organic-inorganic lead or tin halide-based materials, such as methylammonium lead halide, all-inorganic cesium halide, etc., as light supplementing active layers. In the prior art, by using the perovskite material, the efficiency of the solar cell of the device using the material is greatly improved (from 3.8% in 2009 to 25.7% of 2022), and in a single-junction architecture, 29.1% of the perovskite material is achieved in a silicon-based serial cell, which exceeds the photoelectric conversion effect achieved by a single-junction silicon solar cell. Thus, perovskite stacked solar cells have the potential to achieve higher efficiency and extremely low production costs.
Currently, the effective area in the prior art is 1.014cm 2 The efficiency of the perovskite laminated solar cell can reach 32.5%, and the effective area is 25cm 2 The efficiency of the perovskite stacked solar cell structure can reach 29.57%, but the perovskite stacked solar cell has poor working stability in the use process, so that the perovskite stacked solar cell structure is still a factor for restricting commercialization of the perovskite stacked solar cell.
Disclosure of Invention
The utility model mainly aims to provide a perovskite laminated solar cell structure so as to solve the problem of poor structural stability of perovskite laminated solar cells in the prior art.
In order to achieve the above object, according to one aspect of the present utility model, there is provided a perovskite stacked solar cell structure including: a crystalline silicon bottom cell having a first surface; a perovskite top cell disposed on the first surface, the perovskite top cell having a top electrode on a side thereof remote from the first surface; and a silicon nitride layer covering a portion of the top electrode.
Further, the perovskite top cell has a second surface in contact with the first surface, and the silicon nitride layer covers the remaining surface of the perovskite top cell except for the second surface.
Further, the top electrode has a first projection surface on the first surface, and the silicon nitride layer has a second projection surface on the first surface, respectively, the first projection surface and the second projection surface being partially overlapped.
Further, the silicon nitride layer has a third surface far away from the top electrode, and the silicon nitride layer has at least one through region penetrating from the third surface to the top electrode so as to expose a part of the top electrode.
Further, the crystalline silicon bottom cell is a heterogeneous crystalline silicon bottom cell; the perovskite top cell comprises a transparent conductive layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a top electrode which are arranged in a stacked mode, wherein the transparent conductive layer is in contact with the heterogeneous crystalline silicon bottom cell.
Further, the crystalline silicon bottom cell is a heterogeneous crystalline silicon bottom cell; the perovskite top cell comprises a transparent conductive layer, a hole transmission layer, a perovskite absorption layer, an electron transmission layer and a top electrode which are arranged in a stacked mode, wherein the transparent conductive layer is in contact with the heterojunction silicon bottom cell.
Further, the thickness of the silicon nitride layer is 10 to 100nm.
Further, the silicon nitride is SixNy, where x: y ranges from 0.6 to 1.8.
Further, the silicon nitride layers are multiple layers, and the ratio of x to y in each silicon nitride layer is different.
Further, the perovskite top battery is also provided with a first transmission layer and a perovskite absorption layer which are stacked with the top electrode, the first transmission layer is positioned between the top electrode and the perovskite absorption layer, the top electrode at least covers part of the perovskite absorption layer, and the first transmission layer comprises a hole transmission layer or an electron transmission layer.
By applying the technical scheme of the utility model, the perovskite laminated solar cell structure is provided, and the perovskite top cell is arranged on the first surface of the crystalline silicon bottom cell due to the lamination of the crystalline silicon bottom cell and the perovskite top cell in the perovskite laminated solar cell structure, so that the photoelectric conversion efficiency of the formed perovskite laminated solar cell structure is effectively improved; and because one side of the perovskite top cell far away from the first surface is provided with the top electrode, the top electrode is positioned on the outermost layer structure of the perovskite laminated solar cell, when the perovskite laminated solar cell structure is exposed in the environment, the top cell is easily influenced by a high-temperature environment or a humid environment, and the silicon nitride layer is arranged to cover part of the top electrode, and because the silicon nitride layer has the properties of high temperature resistance, moisture resistance, corrosion resistance, compact structure, high strength and the like, the perovskite laminated solar cell structure has the characteristics of high temperature resistance, moisture resistance, corrosion resistance and the like, and the aim of improving the structural stability of the perovskite laminated solar cell through the silicon nitride layer is further realized.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model. In the drawings:
FIG. 1 shows a schematic diagram of a perovskite stacked solar cell structure according to one embodiment of the utility model;
fig. 2 shows a schematic structural diagram of a perovskite stacked solar cell according to another embodiment of the utility model.
Wherein the above figures include the following reference numerals:
10. a crystalline silicon bottom cell; 20. perovskite top cells; 201. a transparent conductive layer; 202. an electron transport layer; 203. a perovskite absorber layer; 204. a hole transport layer; 205. a top electrode; 30. and a silicon nitride layer.
Detailed Description
It should be noted that, without conflict, the embodiments of the present utility model and features of the embodiments may be combined with each other. The utility model will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the utility model herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As mentioned in the background art, the efficiency of the perovskite/silicon stacked solar cell with an effective area of 1.014cm2 in the prior art can reach 32.5%, and the efficiency of the perovskite stacked solar cell with an effective area of 25cm2 can reach 29.57%, however, the working stability of the perovskite stacked solar cell is poor during the use process, so that the commercialization factor of the perovskite stacked solar cell is still restricted. In order to solve the technical problems, embodiments of the present utility model provide a perovskite stacked solar cell structure.
In this embodiment, there is provided a perovskite stacked solar cell structure, as shown in fig. 1, including: a crystalline silicon bottom cell 10, wherein the crystalline silicon bottom cell 10 has a first surface; a perovskite top cell 20, wherein the perovskite top cell 20 is disposed on the first surface, and a top electrode 205 is provided on a side of the perovskite top cell 20 away from the first surface; a silicon nitride layer 30, wherein the silicon nitride layer 30 covers a portion of the top electrode 205.
In the above embodiment, the crystalline silicon bottom cell 10 is disposed in contact with the perovskite stacked top cell, so that the crystalline silicon bottom cell 10 and the perovskite stacked top cell 20 form a perovskite stacked solar cell structure, and thus, the perovskite stacked solar cell structure widens the absorption spectrum of solar energy on the basis of the crystalline silicon bottom cell 10 and the perovskite stacked top cell 20, and obtains higher photoelectric conversion efficiency than that of a single crystalline silicon bottom cell 10 and perovskite stacked top cell 20. Further, the perovskite solar cell structure has a top electrode 205 on a side far away from the first surface, and when the silicon nitride layer 30 is disposed on a side of the top electrode 205 far away from the crystalline silicon bottom cell 10 and the silicon nitride layer 30 covers a portion of the top electrode 205, the perovskite stacked solar cell structure has the characteristics of high temperature resistance, moisture resistance, corrosion resistance, compact structure, high strength and the like due to the properties of high temperature resistance, moisture resistance, corrosion resistance and the like, so that the purpose of improving the structural stability of the perovskite stacked solar cell through the silicon nitride layer 30 is achieved.
In some alternative embodiments, as shown in fig. 2, the perovskite top cell 20 has a second surface in contact with the first surface, and the silicon nitride layer 30 covers the remaining surface of the perovskite top cell 20 except the second surface.
Since the silicon nitride layer 30 also has the function of isolating water and oxygen, in order to prevent the perovskite top cell 20 from reacting with water and oxygen, thereby affecting the stability of the perovskite stacked solar cell structure, in the above embodiment, in the case that the surface of the perovskite top cell 20 in contact with the first surface is taken as the second surface, by providing the silicon nitride layer 30 to cover the remaining surface of the perovskite top cell 20 except for the above second surface, the silicon nitride layer 30 is made to isolate the exposed surface of the perovskite top cell 20 from water and oxygen, thereby preventing the water and oxygen from reacting with the perovskite top cell 20, and further improving the stability of the above perovskite stacked solar cell structure.
In other alternative embodiments, the silicon nitride layer 30 covers a portion of the surface of the perovskite top cell 20 on the side away from the first surface, so that in the case where the perovskite top cell 20 has a plurality of top electrodes 205 arranged at intervals, a portion of the top electrodes 205 of the plurality of top electrodes 205 arranged at intervals are covered with the silicon nitride layer 30, and another portion of the top electrodes 205 are not covered with the silicon nitride layer 30.
In some alternative embodiments, as shown in fig. 1 and 2, the top electrode 205 has a first projection surface on the first surface, and the silicon nitride layer 30 has a second projection surface on the first surface, and the first projection surface partially overlaps the second projection surface.
In the above embodiment, since the top electrode 205 is provided on the side of the perovskite top cell 20 away from the first surface and the silicon nitride layer 30 covers part of the top electrode 205, when the top electrode 205 and the silicon nitride layer 30 are projected on the first surface, the top electrode 205 can be projected on the first surface to obtain a first projection surface, and the silicon nitride layer 30 can be projected on the first surface to obtain a second projection surface, and therefore, since part of the surface of the top electrode 205 is not covered with the silicon nitride layer 30, at least part of the first projection surface and the second projection surface overlap, and there is a case where at least part of the first projection surface corresponding to the top electrode 205 and the second projection surface corresponding to the silicon nitride layer 30 do not overlap.
In some alternative embodiments, the silicon nitride layer 30 has a third surface remote from the top electrode 205, and the silicon nitride layer 30 has at least one through region that penetrates from the third surface to the top electrode 205 to expose a portion of the top electrode 205.
In the above embodiment, in the process of forming the perovskite stacked solar cell structure, the electrode connection point is reserved for the perovskite stacked solar cell, that is, when the side surface of the silicon nitride layer 30 away from the top electrode 205 is the third surface, the through region penetrating the silicon nitride layer 30 is provided, so that the through region penetrates from the third surface of the silicon nitride layer 30 to the top electrode 205, and the electrode connection point can be reserved through the through region.
Alternatively, in a case where the electrode connection point (through region) is provided so that the electrode connection point (through region) is connected to the test apparatus, the test apparatus can be caused to test the cell performance of the perovskite stacked solar cell structure based on the electrode connection point (through region) to obtain a desired cell performance parameter to realize understanding of the characteristics of the cell by the above cell performance parameter, optionally including but not limited to the capacity, internal resistance, voltage characteristics, rate characteristics, temperature characteristics, cycle characteristics, energy density, and the like of the cell, thereby judging whether the perovskite stacked solar cell meets the design objective; alternatively, the capability of the cell to meet the requirements can also be evaluated by testing the resulting cell performance parameters, thereby being used to verify whether the formed perovskite stacked solar cell described above is acceptable.
In some alternative embodiments, as shown in fig. 1 and 2, the crystalline silicon bottom cell 10 is a heterogeneous crystalline silicon bottom cell 10; the perovskite top cell 20 includes a transparent conductive layer 201, an electron transport layer 202, a perovskite absorption layer 203, a hole transport layer 204, and the top electrode 205, which are stacked, and the transparent conductive layer 201 is provided in contact with the heterojunction silicon cell.
Specifically, since the perovskite top cell 20 technology belongs to a low-temperature process, in order to make production equipment in the process of producing the perovskite stacked solar cell have high compatibility, the crystalline silicon bottom cell 10 formed by adopting the low-temperature process is selected as the crystalline silicon bottom cell 10 in the perovskite stacked solar cell structure in the utility model. Alternatively, since the Heterojunction (HJT) crystalline silicon bottom cell 10 and the perovskite top cell 20 are both subjected to a low-temperature process, in the above-described embodiment of the present utility model, a hetero crystalline silicon cell is employed as the crystalline silicon bottom cell 10 in the perovskite stacked solar cell structure.
Specifically, in order to form the perovskite top cell 20 in the low temperature process, the perovskite top cell 20 adopts a formal perovskite top cell 20 structure (n-i-p structure), that is, in a direction away from the first surface of the crystalline silicon bottom cell 10, the formal perovskite top cell 20 structure includes a transparent conductive layer 201, an electron transport layer 202, a perovskite absorption layer 203, a hole transport layer 204, and the top electrode 205 layer that are stacked. Further, since the perovskite stacked solar cell structure in the present embodiment is a regular perovskite top cell 20 structure, the perovskite stacked solar cell structure in the present embodiment also has a higher voltage temperature coefficient and a higher short-circuit current density because the regular perovskite top cell 20 structure has a higher voltage temperature coefficient and a higher short-circuit current density.
Alternatively, in other embodiments, the above-mentioned crystalline silicon bottom cell 10 may also be a tunnel oxide passivation contact (TOPCon) crystalline silicon bottom cell 10, an emitter passivation and back contact (PERC) crystalline silicon bottom cell 10, an Intersecting Back Contact (IBC) crystalline silicon bottom cell 10, a Heterojunction Back Contact (HBC) crystalline silicon bottom cell 10, or the like.
Alternatively, the material of the transparent conductive layer 201 may include a transparent conductive oxide (Transparent Conductive Oxide, TCO) with advantages of high transmittance and low resistivity, wherein the transparent conductive oxide mainly includes CdO, in 2 O 3 、SnO 2 And ZnO and other oxides and corresponding composite multi-compound semiconductor materials. Further, the complex multi-compound semiconductor material may include indium tin oxide (ITO, in) 2 O 3 : sn), aluminum-doped zinc oxide (AZO, znO: al), fluorine doped tin oxide (FTO, snO) 2 : f) And antimony doped tin oxide (ATO, sn) 2 O: sb).
Optionally, the electron transport layer 202 is made of an N-type semiconductor material, wherein the N-type semiconductor material may include lithium (Li), C 60 Tin oxide (SnO) x ) Titanium oxide (TiO) 2 ) And any one of zinc oxide (ZnO). Alternatively, the electron transport layer 202 may have a thickness of 150 to 200nm.
Alternatively, the material of the perovskite absorption layer 203 may include a crystal structure ABX 3 Perovskite material, wherein a is an organic or inorganic cation of +1 valence, in particular cesium ions (Cs + ) Organic formamidine ion (CH (NH) 2 ) 2 + Abbreviated as FA + ) Organic methylamine ions (CH) 3 NH 2 + Abbreviated as MA + ) Guanidinium ions (C (NH) 2 ) 3 + ) B is a metal cation of +2, in particular, may be lead (Pb) 2+ ) Tin ion (Sn) 2+ ) One or more of X is halogen with valence of-1The ions, in particular, can be bromide (Br - ) Iodide ion (I) - ) And chloride ions (Cl) - ) One or more of the following. Alternatively, the thickness of the perovskite absorption layer 203 may be 300 to 500nm.
Optionally, the hole transport layer 204 is formed of a P-type semiconductor material, wherein the P-type semiconductor material may include nickel oxide (NiO) x ) 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]-one or more of 9,9' -spirobifluorene (Spiro-oMeTad) and copper thiocyanate (CuSCN). Alternatively, the hole transport layer 204 may have a thickness of 150 to 200nm.
Alternatively, the material of the top electrode 205 may include an alloy formed of one or more metals of silver (Ag), gold (Au), aluminum (Al), copper (Cu), molybdenum (Mo), tungsten (W), nickel (Ni), magnesium (Mg), tin (Sn), and tantalum (Ta). Alternatively, the thickness of the electrode layer may be 20 to 100nm.
In some alternative embodiments, the crystalline silicon bottom cell 10 is a heterogeneous crystalline silicon bottom cell 10; the perovskite top cell 20 includes a transparent conductive layer 201, a hole transport layer 204, a perovskite absorption layer 203, an electron transport layer 202, and the top electrode 205, which are stacked, and the transparent conductive layer 201 is provided in contact with the heterojunction silicon cell.
In the above embodiment, since the perovskite top cell 20 technology belongs to the low temperature process, in order to make the production equipment in the process of producing the perovskite stacked solar cell have high compatibility, the Heterojunction (HJT) crystalline silicon bottom cell 10 formed by the low temperature process is selected as the crystalline silicon bottom cell 10 in the perovskite stacked solar cell structure of the present utility model.
Specifically, in the above embodiment, in order to reduce the manufacturing cost of forming the perovskite stacked solar cell structure and to simplify the manufacturing process, the perovskite top cell 20 adopts a trans-perovskite top cell 20 structure (p-i-n structure), that is, in a direction away from the first surface of the above-described crystalline silicon bottom cell 10, the trans-perovskite top cell 20 structure includes a transparent conductive layer 201, a hole transport layer 204, a perovskite absorption layer 203, an electron transport layer 202, and the above-described top electrode 205 layer that are stacked. Further, since the perovskite stacked solar cell structure in the embodiment is a trans-perovskite top cell 20 structure, the preparation process of the trans-perovskite top cell 20 structure is simple, and the preparation cost is low, so that the perovskite stacked solar cell structure in the embodiment also has the characteristics of simple preparation process and low preparation cost.
Alternatively, the hole transport layer 204 is a P-type semiconductor material, and the trans-perovskite top cell 20 may be formed by using PEDOT PSS (an aqueous solution of a polymer of EDOT (3, 4-ethylenedioxythiophene monomer) and a polymer of polystyrene sulfonate) as the material for forming the hole transport layer 204, and spin-coating the same on the conductive substrate of the transparent conductive layer 201, and alternatively, the thickness of the hole transport layer 204 may be 30 to 50nm.
Optionally, the perovskite absorber layer 203 in the perovskite stacked solar cell structure in this embodiment is also ABX 3 Perovskite type materials.
Optionally, the electron transport layer 202 is an N-type semiconductor material, and the trans-perovskite top cell 20 may be formed using fullerene derivatives (PCBM) or C 60 As a material for forming the electron transport layer 202, the electron transport layer 202 may alternatively have a thickness of 40 to 60nm.
Optionally, the material of the top electrode 205 in the perovskite stacked solar cell structure in this embodiment is also selected from an alloy formed by one or more metals of silver (Ag), gold (Au), aluminum (Al), copper (Cu), molybdenum (Mo), tungsten (W), nickel (Ni), magnesium (Mg), tin (Sn) and tantalum (Ta). Alternatively, the thickness of the electrode layer may be 20 to 100nm.
In some alternative embodiments, the thickness of the silicon nitride layer 30 is 10-100 nm, so that the silicon nitride layer 30 can be used as an anti-reflection layer of the perovskite stacked solar cell structure and can be used as a protective layer of the perovskite stacked solar cell structure. Optionally, the silicon nitride layer 30 is formed using Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD), optionally, the nitrogenSiH is used for the silicon layer 30 4 And NH 3 Or N 2 The reaction deposition is formed, and optionally, the deposition temperature is not higher than 70 ℃ when the inductively coupled plasma chemical vapor deposition is adopted.
In some alternative embodiments, the silicon nitride is Si x N y Wherein x: y ranges from 0.6 to 1.8, thereby making the silicon nitride layer 30 suitable for use in different perovskite stacked solar cell structures.
In some alternative embodiments, the silicon nitride layers 30 are multiple layers, and the ratio of x to y in each of the silicon nitride layers 30 is different, so that the purpose of adjusting the cell characteristics of the perovskite stacked solar cell structure having the multiple silicon nitride layers 30 can be achieved by adjusting the nitrogen atom content and the silicon atom content in the silicon nitride of the different layers.
In some alternative embodiments, the perovskite top cell 20 further includes a first transport layer and a perovskite absorption layer 203 stacked with the top electrode 205, the first transport layer is located between the top electrode 205 and the perovskite absorption layer 203, and the top electrode 205 covers at least a portion of the perovskite absorption layer 203, and the first transport layer includes a hole transport layer 204 or an electron transport layer 202.
In the above embodiment, since the electrode area of the perovskite stacked solar cell structure can affect the performance of the cell, that is, the larger the electrode area of the cell, the smaller the internal resistance, and thus the coverage area of the perovskite absorption layer 203 may be covered by the top electrode 205 by actually designing the top electrode 205 in the process of forming the electrode of the perovskite stacked solar cell structure, the top electrode 205 in this embodiment may cover at least a part of the perovskite absorption layer 203, or may cover all of the perovskite absorption layer 203.
The above perovskite stacked solar cell structure of the present utility model will be further described with reference to examples and comparative examples.
Example 1
The Heterojunction (HJT) crystalline silicon bottom cell is used as a bottom cell of a perovskite laminated solar cell structure, wherein the crystalline silicon bottom cell comprises a first metal electrode layer (bottom electrode), a first transparent conductive oxide layer, a P-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type silicon wafer, a second intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer, a second transparent conductive oxide layer and a second metal electrode layer which are laminated, wherein the material of the first metal electrode layer is metallic silver, the material of the first transparent conductive oxide layer is indium tin oxide, the P-type doped amorphous silicon layer is boron doped, the N-type doped amorphous silicon layer is phosphorus doped, the material of the second transparent conductive oxide layer is indium tin oxide, and the material of the second metal electrode layer is metallic silver;
a perovskite top cell adopting a trans structure (p-i-n structure) is used as a top cell of a perovskite stacked solar cell structure, wherein the perovskite top cell comprises a transparent conductive layer (indium tin oxide), a hole transport layer (nickel oxide), and a perovskite absorption layer (CsPbI) 3 ) An electron transport layer (tin oxide) and a top electrode (silver);
a silicon nitride layer, wherein the silicon nitride (Si x N y ) In layer x: y is 1.05 and the silicon nitride layer covers the remaining surface of the perovskite top cell except for the second surface.
Example 2
This example 2 differs from example 1 in that the silicon nitride layer covers only the top electrode of the perovskite top cell.
Example 3
This example 3 differs from example 1 in that the silicon nitride (Si x N y ) In layer x: y is 0.6.
Example 4
This example 4 differs from example 1 in that the silicon nitride (Si x N y ) In layer x: y is 1.8.
Comparative example 1
This comparative example 1 is different from example 1 in that a silicon nitride layer is not provided.
Tracking the maximum power point of the perovskite stacked solar cell corresponding to the above-mentioned examples 1, 2, 3,4 and comparative example 1 in air with a relative humidity of 20-40%, wherein the tracking time period is 1000 hours, obtaining tracking results and normalizing the tracking results, obtaining normalized power generation efficiency values of the perovskite stacked solar cell corresponding to the above-mentioned different examples and comparative examples, as shown in table 1:
TABLE 1
| Normalized efficiency value/% | |
| Example 1 | 0.92 |
| Example 2 | 0.6 |
| Example 3 | 0.85 |
| Example 4 | 0.8 |
| Comparative example 1 | 0.5 |
As can be seen from table 1, the stability of the perovskite stacked solar cell structure can be significantly improved by providing the silicon nitride layer and covering the remaining surface of the perovskite top cell except the second surface.
From the above description, it can be seen that the above embodiments of the present utility model achieve the following technical effects:
because the crystal silicon bottom cell and the perovskite top cell are arranged in a lamination manner in the perovskite lamination solar cell structure, the perovskite top cell is arranged on the first surface of the crystal silicon bottom cell, so that the photoelectric conversion efficiency of the formed perovskite lamination solar cell structure is effectively improved; and because one side of the perovskite top cell far away from the first surface is provided with the top electrode, the top electrode is positioned on the outermost layer structure of the perovskite laminated solar cell, when the perovskite laminated solar cell structure is exposed in the environment, the top cell is easily influenced by a high-temperature environment or a humid environment, and the silicon nitride layer is arranged to cover part of the top electrode, and because the silicon nitride layer has the properties of high temperature resistance, moisture resistance, corrosion resistance, compact structure, high strength and the like, the perovskite laminated solar cell structure has the characteristics of high temperature resistance, moisture resistance, corrosion resistance and the like, and the aim of improving the structural stability of the perovskite laminated solar cell through the silicon nitride layer is further realized.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. A perovskite stacked solar cell structure comprising:
a crystalline silicon bottom cell having a first surface;
a perovskite top cell disposed on the first surface, the perovskite top cell having a top electrode on a side thereof remote from the first surface;
and a silicon nitride layer covering a portion of the top electrode.
2. The perovskite-stacked solar cell structure of claim 1, wherein the perovskite-top cell has a second surface in contact with the first surface, and the silicon nitride layer covers the remaining surface of the perovskite-top cell other than the second surface.
3. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the top electrode has a first projection surface on the first surface, respectively, and the silicon nitride layer has a second projection surface on the first surface, respectively, the first projection surface partially overlapping the second projection surface.
4. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the silicon nitride layer has a third surface remote from the top electrode, the silicon nitride layer having at least one through region that passes from the third surface to the top electrode to expose a portion of the top electrode.
5. The perovskite stacked solar cell structure as claimed in claim 1 or 2, wherein,
the crystalline silicon bottom battery is a heterogeneous crystalline silicon bottom battery;
the perovskite top battery comprises a transparent conductive layer, an electron transmission layer, a perovskite absorption layer, a hole transmission layer and a top electrode which are arranged in a stacked mode, wherein the transparent conductive layer is in contact with the heterogeneous crystalline silicon bottom battery.
6. The perovskite stacked solar cell structure as claimed in claim 1 or 2, wherein,
the crystalline silicon bottom battery is a heterogeneous crystalline silicon bottom battery;
the perovskite top battery comprises a transparent conductive layer, a hole transmission layer, a perovskite absorption layer, an electron transmission layer and a top electrode which are arranged in a stacked mode, wherein the transparent conductive layer is in contact with the heterojunction silicon bottom battery.
7. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the thickness of the silicon nitride layer is 10-100 nm.
8. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the silicon nitride is SixNy, wherein x: y ranges from 0.6 to 1.8.
9. The perovskite-stacked solar cell structure of claim 8, wherein the silicon nitride layers are multi-layered and the ratio of x to y is different for each of the silicon nitride layers.
10. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the perovskite top cell further has a first transport layer and a perovskite absorber layer disposed in a stack with the top electrode, the first transport layer being located between the top electrode and the perovskite absorber layer, and the top electrode covering at least a portion of the perovskite absorber layer, the first transport layer comprising a hole transport layer or an electron transport layer.
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