CN220107960U - Driving circuit for half-bridge structure - Google Patents
Driving circuit for half-bridge structure Download PDFInfo
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- CN220107960U CN220107960U CN202321277016.8U CN202321277016U CN220107960U CN 220107960 U CN220107960 U CN 220107960U CN 202321277016 U CN202321277016 U CN 202321277016U CN 220107960 U CN220107960 U CN 220107960U
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Abstract
The utility model provides a driving circuit which is used for driving a switching tube of a half-bridge structure to be conducted, when the power supply voltage of the half-bridge structure is increased, the voltage value which needs to be reached by output voltage is increased, the driving circuit controls the driving current to be increased, the conduction degree of the switching tube is increased, the rising rate of the output voltage is higher, and the two are offset, so that the rising time of the output voltage is basically unchanged. When the power supply voltage of the half-bridge structure is reduced, the driving circuit controls the driving current to be reduced, the conduction degree of the switching tube is reduced, the rising rate of the output voltage is lower, and the rising time of the output voltage is limited.
Description
Technical Field
The utility model relates to the technical field of electronics, in particular, but not exclusively, to a driving circuit for a half-bridge structure.
Background
The half-bridge structure is a circuit structure which is formed by connecting two switching tubes (such as MOS tubes, triodes and the like) in a totem pole mode, taking a middle point as output and providing square wave signals. Fig. 1 shows a half-bridge structure, in which the upper and lower switching tubes are controlled by two independent signals, and when one of the switching tubes is turned on, the other is turned off, so that a pulse signal with a voltage from 0 to a supply voltage is obtained at an intermediate output point.
Currently, the opening speeds of the two switching tubes are controlled by a constant current source I0 and a constant current source I1 respectively, and electromagnetic interference (EMI) is reduced by adopting a slow-opening and fast-closing mode. However, since the constant current source I0 and the constant current source I1 generate a constant current, a constant slew rate is generated as a driving signal of the switching transistor, and the power supply voltage V CC The higher the output voltage V out The longer the rise time and fall time, the adverse effect on applications requiring severely limited rise/fall times.
In view of this, there is a need to provide a new architecture or control method in order to solve at least some of the above problems.
Disclosure of Invention
At least aiming at one or more problems in the background art, the utility model provides a driving circuit for a half-bridge structure, which can adaptively adjust the magnitude of driving current according to the level of power supply voltage, thereby strictly limiting the rising/falling time of the output voltage of the half-bridge structure.
According to the driving circuit for the half-bridge structure, which is provided by the embodiment of the utility model, the driving circuit is used for driving the switching tube of the half-bridge structure to be conducted, if the power supply voltage of the half-bridge structure is increased, the driving circuit controls the driving current to be increased, and if the power supply voltage of the half-bridge structure is reduced, the driving circuit controls the driving current to be reduced.
Optionally, the driving circuit includes a first resistor, the first resistor has a first end and a second end, the first end is coupled to the power supply voltage of the half-bridge structure, and the second end is coupled to the control end of the switching tube of the half-bridge structure.
Optionally, if the supply voltage of the half-bridge structure is maintained unchanged, the driving current of the driving circuit is also maintained unchanged.
Optionally, the driving circuit includes: a second resistor; the first current mirror is provided with a reference end and a bias end, wherein the reference end of the first current mirror is coupled with the second resistor, and the bias end of the first current mirror is coupled with the control end of the switching tube of the half-bridge structure and is used for driving the switching tube to be conducted.
Optionally, the first current mirror includes: a first transistor having a first end, a second end and a control end, wherein the first end is coupled with the power supply voltage of the half-bridge structure, the second end is coupled with the second resistor, and the control end is coupled with the second end of the first transistor; the second transistor is provided with a first end, a second end and a control end, wherein the first end of the second transistor is coupled with the power supply voltage of the half-bridge structure, the second end of the second transistor is coupled with the control end of the switching tube in the half-bridge structure, and the control end of the second transistor is coupled with the control end of the first transistor.
Optionally, the first transistor and the second transistor are field effect transistors.
Optionally, the driving circuit includes: a third resistor; a second current mirror having a reference terminal and a bias terminal, the reference terminal of which is coupled to the third resistor; the third current mirror is provided with a reference end, a first bias end and a second bias end, wherein the reference end is coupled with the bias end of the second current mirror, the first bias end is coupled with the third transistor, and the second bias end is coupled with the control end of the half-bridge structure switching tube; a third transistor having a first terminal coupled to the first bias terminal of the third current mirror, a second terminal coupled to the reference ground, and a control terminal coupled to the fourth transistor; the fourth current mirror is provided with a reference end and a bias end, the reference end of the fourth current mirror is coupled with the fourth transistor, and the bias end of the fourth current mirror is coupled with the control end of the switching tube of the half-bridge structure; a fourth transistor having a first end, a second end and a control end, wherein the first end is coupled with the reference end of the fourth current mirror, the second end is coupled with the control end of the third transistor, and the control end is coupled with the first bias end of the third current mirror; and one end of the fourth resistor is coupled with the control end of the third transistor, and the other end of the fourth resistor is coupled with the second end of the third transistor.
Optionally, the resistance value of the third resistor is equal to the resistance value of the fourth resistor.
Optionally, the second current mirror includes: a fifth transistor having a first end, a second end and a control end, wherein the first end is coupled with the third resistor, the second end is coupled with the reference ground, and the control end is coupled with the first end of the fifth transistor; and a sixth transistor having a first end, a second end and a control end, wherein the first end is coupled to the reference end of the third current mirror, the second end is coupled to the reference ground, and the control end is coupled to the control end of the fifth transistor.
Optionally, the third current mirror includes: a seventh transistor having a first end, a second end and a control end, wherein the first end is coupled with the power supply voltage of the half-bridge structure, the second end is coupled with the first end of the sixth transistor, and the control end is coupled with the second end of the seventh transistor; an eighth transistor having a first end, a second end and a control end, wherein the first end is coupled to the power supply voltage of the half-bridge structure, the second end is coupled to the first end of the third transistor, and the control end is coupled to the control end of the seventh transistor; and the ninth transistor is provided with a first end, a second end and a control end, the first end of the ninth transistor is coupled with the power supply voltage of the half-bridge structure, the second end of the ninth transistor is coupled with the control end of the switching tube in the half-bridge structure, and the control end of the ninth transistor is coupled with the control end of the seventh transistor.
Optionally, the fourth current mirror includes: a tenth transistor having a first terminal coupled to the power supply voltage of the half-bridge structure, a second terminal coupled to the first terminal of the fourth transistor, and a control terminal coupled to the second terminal of the tenth transistor; an eleventh transistor having a first end coupled to the power supply voltage of the half-bridge structure, a second end coupled to the control end of the switching transistor in the half-bridge structure, and a control end coupled to the control end of the tenth transistor.
The beneficial effects are that:
according to the driving circuit provided by the embodiment of the utility model, the driving circuit is used for driving the switching tube of the half-bridge structure to be conducted, when the power supply voltage of the half-bridge structure is increased, the voltage value which needs to be reached by the output voltage is increased, the driving circuit is used for controlling the driving current to be increased, the conduction degree of the switching tube is increased, the rising rate of the output voltage is higher, and the two are offset, so that the rising time of the output voltage is basically unchanged. When the power supply voltage of the half-bridge structure is reduced, the driving circuit controls the driving current to be reduced, the conduction degree of the switching tube is reduced, the rising rate of the output voltage is lower, and the rising time of the output voltage is limited.
Drawings
The accompanying drawings are included to provide a further understanding of the utility model, and together with the description serve to explain the embodiments of the utility model, and do not constitute a limitation of the utility model. In the drawings:
fig. 1 shows a half-bridge structure in which a constant current source is used as a driving signal;
FIG. 2 illustrates a drive circuit for a half-bridge structure according to an embodiment of the utility model;
fig. 3 shows an internal structure of a driving circuit according to an embodiment of the present utility model;
fig. 4 shows an internal structure of a driving circuit according to another embodiment of the present utility model;
fig. 5 shows an internal structure of a driving circuit according to still another embodiment of the present utility model.
Detailed Description
For a further understanding of the present utility model, preferred embodiments of the utility model are described below in conjunction with the examples, but it should be understood that these descriptions are merely intended to illustrate further features and advantages of the utility model, and are not limiting of the claims of the utility model.
The description of this section is intended to be illustrative of only a few exemplary embodiments and the utility model is not to be limited in scope by the description of the embodiments. Combinations of the different embodiments, and alternatives of features from the same or similar prior art means and embodiments are also within the scope of the description and protection of the utility model.
"coupled" or "connected" in the specification includes both direct and indirect connections. An indirect connection is a connection via an intermediary, such as a connection via an electrically conductive medium, such as a conductor, where the electrically conductive medium may contain parasitic inductance or parasitic capacitance, or may be a connection via an intermediary circuit or component described in the embodiments of the specification; indirect connections may also include connections through other active or passive devices, such as through circuits or components such as switches, signal amplification circuits, follower circuits, and the like, that may perform the same or similar functions. "plurality" or "multiple" means two or more.
As shown in fig. 2, an embodiment of the present utility model provides a driving circuit for a half-bridge structure, wherein the half-bridge structure mainly comprises an upper switching tube and a lower switching tube, and the conduction degree of the switching tube is controlled by the voltage of the control end of the switching tube. In a certain range, the higher the voltage at the control end of the switching tube is, the larger the conduction degree of the switching tube is, the current flowing through the switching tube is increased along with the increase of the current, and the voltage V is output in unit time out The greater the voltage value of (2). The driving circuit has an input end and an output end, and the input end of the driving circuit is coupled with the power supply voltage V CC For sampling supply voltage V CC Real-time tracking of supply voltage V CC Is a variation of (2); the output end of the driving circuit is coupled with the control end of the switching tube with the half-bridge structure, and the driving circuit controls the rising rate of the voltage of the control end of the switching tube by controlling the magnitude of the driving current, so that the conduction degree of the switching tube is influenced.
As mentioned above, if the current driving the half-bridge switching tube is a fixed current, if the supply voltage V CC Rise and output voltage V out The rise time of (c) becomes long. If at the supply voltage V CC When the voltage rises, the driving current is increased, the voltage rise of the control end of the switching tube is accelerated, the switching tube can be conducted more quickly, and the voltage V is output out The rising rate of (2) becomes high. At this time, although the voltage V is outputted out The voltage value to be reached becomes large, but the rising rate becomes high, and the two are offset to limit the output voltage V out Rise time of (c) is set. Conversely, when the power supply voltage V CC Reducing the drive current, likewise limiting the output voltage V out Is a falling time of (2).
Thus, the driving circuit in one embodiment functions as: if the power supply voltage V of the half-bridge structure CC Increasing, controlling the driving current to increase; if the power supply voltage V of the half-bridge structure CC And (3) reducing, wherein the control driving current is reduced. In this way, it is possible to limitProducing output voltage V out Rise/fall time of (c).
In one embodiment, as shown in FIG. 3, the driving circuit includes a first resistor R 1 First resistor R 1 Having a first end and a second end, the first end of which is coupled with the power supply voltage V of the half-bridge structure CC The second end of the switching tube is coupled with the control end of the switching tube with the half-bridge structure. The drive current in this embodiment follows the supply voltage V CC Increases with increasing supply voltage V CC And decreases.
In one embodiment, as shown in FIG. 4, the driving circuit includes a first current mirror and a second resistor R 2 . The first current mirror is provided with a reference end and a bias end, and the reference end of the first current mirror is coupled with the second resistor to generate reference current; the bias end of the first current mirror is coupled with the control end of the switching tube and generates bias current which is used for driving the switching tube to conduct.
Alternatively, as shown in FIG. 4, a second resistor R 2 One end is coupled to the reference ground, and the other end is coupled to the first current mirror. The first current mirror comprises a first transistor and a second transistor, wherein the first transistor and the second transistor are P-type triodes, P-type field effect transistors or other P-type transistors capable of forming the current mirror. First transistor PM 1 Control terminal of (c) and second transistor PM 2 The control ends of the control ends are mutually coupled; first transistor PM 1 First and second transistors PM 2 Are all coupled to the power supply voltage V CC A source end of the first current mirror is formed; first transistor PM 1 The second end of the first current mirror is a reference end of the first current mirror; second transistor PM 2 Is the bias terminal of the first current mirror. When the power supply voltage V CC The reference end current is increased, and the bias end current is the mirror current of the reference end current, so that the reference end current is also increased; when the power supply voltage V CC The bias current decreases as well.
In one embodiment, as shown in fig. 5, the driving circuit includes a second current mirror, a third current mirror, and a fourth current mirror. Wherein the second current mirror is formed by a fifth transistor NM 5 Sixth transistor NM 6 Form, third electricityThe current mirror is formed by a seventh transistor PM 7 Eighth transistor PM 8 And a ninth transistor PM 9 The fourth current mirror is composed of a tenth transistor PM 10 Eleventh transistor PM 11 The composition is formed. The coupling manner of the second current mirror, the third current mirror and the fourth current mirror may refer to the first current mirror above, and will not be described herein.
As shown in fig. 5, the reference terminal of the second current mirror is coupled to a third resistor R 3 The reference terminal current is therefore: v (V) CC /R 3 -V th1 /R 3 Wherein V is th1 Is the threshold voltage of the fifth transistor NM 5. The bias terminal of the second current mirror is coupled to the reference terminal of the third current mirror, and in this embodiment, if the reference currents of the current mirrors are equal to the bias currents thereof, the ninth transistor PM 9 The current in the branch being equal to V CC /R 3 -V th1 /R 3 . One end of the fourth resistor R4 is coupled to the control end of the third transistor NM3, and the other end is coupled to the second end of the third transistor NM3, so that the current flowing through the fourth resistor R4 is V th2 /R 4 Wherein V is th2 Is the threshold voltage of the third transistor NM 3. Reference end of fourth current mirror and fourth resistor R 4 In series, therefore the currents flowing through the two are equal, the eleventh transistor PM 11 The current in the branch being equal to V th2 /R 4 . The bias end of the third current mirror and the bias end of the fourth current mirror are coupled with the control end of the switching tube of the half-bridge structure, and then the driving current of the switching tube is as follows: v (V) CC /R 3 -V th1 /R 3 +V th2 /R 4 . If the third resistance R 3 The resistance value of (a) is equal to that of the fourth resistor R4, the third transistor NM 3 Threshold voltage of (v) and fifth transistor NM 5 The threshold voltages of (2) are also equal, the above can be simplified to V CC /R 3 Drive current and supply voltage V CC Proportional to the ratio.
The driving circuit of fig. 5 has significant advantages over the driving circuits of fig. 3 and 4. Wherein, the driving circuit shown in FIG. 3, when the power supply voltage V CC When the voltage of the control end of the switching tube is kept stable, the voltage of the control end of the switching tube is continuously increased, the firstResistor R 1 The voltage difference between the two sides is continuously reduced, the driving current is slowly reduced, and the stability of the driving current cannot be maintained. The driving circuit shown in FIG. 4 has a driving current further subjected to a non-supply voltage V due to a voltage drop when the first transistor is turned on CC Is influenced by factors of (a).
It will be appreciated by those skilled in the art that the logic controls of the "high" and "low", "set" and "reset", "and" or "," in-phase input "and" anti-phase input "among the logic controls described in the specification or drawings may be interchanged or changed, and that the same functions or purposes as those of the above embodiments may be achieved by adjusting the subsequent logic controls.
The description and applications of the present utility model herein are illustrative and are not intended to limit the scope of the utility model to the embodiments described above. The relevant descriptions of effects, advantages and the like in the description may not be presented in practical experimental examples due to uncertainty of specific condition parameters or influence of other factors, and the relevant descriptions of effects, advantages and the like are not used for limiting the scope of the utility model. Variations and modifications of the embodiments disclosed herein are possible, and alternatives and equivalents of the various components of the embodiments are known to those of ordinary skill in the art. It will be clear to those skilled in the art that the present utility model may be embodied in other forms, structures, arrangements, proportions, and with other assemblies, materials, and components, without departing from the spirit or essential characteristics thereof. Other variations and modifications of the embodiments disclosed herein may be made without departing from the scope and spirit of the utility model.
Claims (11)
1. A drive circuit for a half-bridge structure, characterized by: the driving circuit is provided with an input end and an output end, wherein the input end of the driving circuit is coupled with the power supply voltage of the half-bridge structure, the output end of the driving circuit is coupled with the control end of the switching tube of the half-bridge structure, the driving circuit is used for changing the conduction degree of the switching tube of the half-bridge structure according to the power supply voltage of the half-bridge structure, if the power supply voltage of the half-bridge structure is increased, the driving circuit controls the driving current to be increased, and if the power supply voltage of the half-bridge structure is reduced, the driving circuit controls the driving current to be reduced, and the conduction degree of the switching tube of the half-bridge structure is reduced.
2. The drive circuit of claim 1, wherein: the driving circuit comprises a first resistor, wherein the first resistor is provided with a first end and a second end, the first end of the first resistor is coupled with the power supply voltage of the half-bridge structure, and the second end of the second resistor is coupled with the control end of the switching tube of the half-bridge structure.
3. The drive circuit of claim 1, wherein: if the supply voltage of the half-bridge structure is kept unchanged, the drive current of the drive circuit is also kept unchanged.
4. A driver circuit according to claim 3, wherein the driver circuit comprises:
a second resistor;
the first current mirror is provided with a reference end and a bias end, wherein the reference end of the first current mirror is coupled with the second resistor, and the bias end of the first current mirror is coupled with the control end of the switching tube of the half-bridge structure and is used for driving the switching tube to be conducted.
5. The drive circuit of claim 4, wherein the first current mirror comprises:
a first transistor having a first end, a second end and a control end, wherein the first end is coupled with the power supply voltage of the half-bridge structure, the second end is coupled with the second resistor, and the control end is coupled with the second end of the first transistor;
the second transistor is provided with a first end, a second end and a control end, wherein the first end of the second transistor is coupled with the power supply voltage of the half-bridge structure, the second end of the second transistor is coupled with the control end of the switching tube in the half-bridge structure, and the control end of the second transistor is coupled with the control end of the first transistor.
6. The drive circuit of claim 5, wherein: the first transistor and the second transistor are field effect transistors.
7. A driver circuit according to claim 3, wherein the driver circuit comprises:
a third resistor;
a second current mirror having a reference terminal and a bias terminal, the reference terminal of which is coupled to the third resistor;
the third current mirror is provided with a reference end, a first bias end and a second bias end, wherein the reference end is coupled with the bias end of the second current mirror, the first bias end is coupled with the third transistor, and the second bias end is coupled with the control end of the half-bridge structure switching tube;
a third transistor having a first terminal coupled to the first bias terminal of the third current mirror, a second terminal coupled to the reference ground, and a control terminal coupled to the fourth transistor;
the fourth current mirror is provided with a reference end and a bias end, the reference end of the fourth current mirror is coupled with the fourth transistor, and the bias end of the fourth current mirror is coupled with the control end of the switching tube of the half-bridge structure;
a fourth transistor having a first end, a second end and a control end, wherein the first end is coupled with the reference end of the fourth current mirror, the second end is coupled with the control end of the third transistor, and the control end is coupled with the first bias end of the third current mirror;
and one end of the fourth resistor is coupled with the control end of the third transistor, and the other end of the fourth resistor is coupled with the second end of the third transistor.
8. The drive circuit of claim 7, wherein: and the resistance value of the third resistor is equal to that of the fourth resistor.
9. The drive circuit of claim 7, wherein the second current mirror comprises:
a fifth transistor having a first end, a second end and a control end, wherein the first end is coupled with the third resistor, the second end is coupled with the reference ground, and the control end is coupled with the first end of the fifth transistor;
and a sixth transistor having a first end, a second end and a control end, wherein the first end is coupled to the reference end of the third current mirror, the second end is coupled to the reference ground, and the control end is coupled to the control end of the fifth transistor.
10. The drive circuit of claim 9, wherein the third current mirror comprises:
a seventh transistor having a first end, a second end and a control end, wherein the first end is coupled with the power supply voltage of the half-bridge structure, the second end is coupled with the first end of the sixth transistor, and the control end is coupled with the second end of the seventh transistor;
an eighth transistor having a first end, a second end and a control end, wherein the first end is coupled to the power supply voltage of the half-bridge structure, the second end is coupled to the first end of the third transistor, and the control end is coupled to the control end of the seventh transistor;
and the ninth transistor is provided with a first end, a second end and a control end, the first end of the ninth transistor is coupled with the power supply voltage of the half-bridge structure, the second end of the ninth transistor is coupled with the control end of the switching tube in the half-bridge structure, and the control end of the ninth transistor is coupled with the control end of the seventh transistor.
11. The drive circuit of claim 10, wherein the fourth current mirror comprises:
a tenth transistor having a first terminal coupled to the power supply voltage of the half-bridge structure, a second terminal coupled to the first terminal of the fourth transistor, and a control terminal coupled to the second terminal of the tenth transistor;
an eleventh transistor having a first end coupled to the power supply voltage of the half-bridge structure, a second end coupled to the control end of the switching transistor in the half-bridge structure, and a control end coupled to the control end of the tenth transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321277016.8U CN220107960U (en) | 2023-05-24 | 2023-05-24 | Driving circuit for half-bridge structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321277016.8U CN220107960U (en) | 2023-05-24 | 2023-05-24 | Driving circuit for half-bridge structure |
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| Publication Number | Publication Date |
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| CN220107960U true CN220107960U (en) | 2023-11-28 |
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| CN202321277016.8U Active CN220107960U (en) | 2023-05-24 | 2023-05-24 | Driving circuit for half-bridge structure |
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| CN (1) | CN220107960U (en) |
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- 2023-05-24 CN CN202321277016.8U patent/CN220107960U/en active Active
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