CN219873534U - Small CMOS image acquisition module - Google Patents
Small CMOS image acquisition module Download PDFInfo
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- CN219873534U CN219873534U CN202320136434.9U CN202320136434U CN219873534U CN 219873534 U CN219873534 U CN 219873534U CN 202320136434 U CN202320136434 U CN 202320136434U CN 219873534 U CN219873534 U CN 219873534U
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- layer
- heat dissipation
- heat
- circuit board
- image acquisition
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000741 silica gel Substances 0.000 claims abstract description 8
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- -1 graphite alkene Chemical class 0.000 claims description 9
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 238000009423 ventilation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 64
- 238000001816 cooling Methods 0.000 abstract description 12
- 239000012790 adhesive layer Substances 0.000 abstract description 2
- 206010070834 Sensitisation Diseases 0.000 description 11
- 230000008313 sensitization Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000703 anti-shock Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002508 compound effect Effects 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The utility model belongs to the technical field of CMOS image acquisition, in particular to a small CMOS image acquisition module, which comprises a circuit board, wherein a CMOS photosensitive chip is arranged on the upper end surface of the circuit board, a lens seat is arranged outside the CMOS photosensitive chip, a lens is screwed on the lens seat, the bottom of the circuit board is connected with a graphene heat conduction layer through an insulating heat conduction adhesive layer, the bottom of the graphene heat conduction layer is compositely adhered with a metal wave absorbing layer, the bottom of the metal wave absorbing layer is provided with a heat dissipation plate layer, the bottom of the heat dissipation plate layer is fixedly connected with a plurality of heat dissipation fins, the bottom of the circuit board is provided with a heat dissipation through hole below the CMOS photosensitive chip, the insulating heat conduction silica gel layer is filled in the heat dissipation through hole, the graphene heat conduction layer can conduct heat to the horizontal direction and dissipate heat, and the metal wave absorbing layer can transfer the heat to the vertical direction, so that the heat dissipation area can be increased, and the heat can be efficiently dissipated under the action of external air cooling.
Description
Technical Field
The utility model relates to the technical field of CMOS image acquisition, in particular to a small CMOS image acquisition module.
Background
CMOS is an abbreviation for Complementary Metal Oxide Semiconductor (complementary metal oxide semiconductor) and refers to a technology used for manufacturing large scale integrated circuit chips or chips manufactured by such technology. The CMOS image acquisition module converts light, image and image into electronic digital signals, each pixel of the CMOS lens comprises an amplifier and an A/D conversion circuit, and a plurality of positioning electronic elements are compressed in the surface area of a photosensitive area of a single pixel. The working principle of the CMOS image acquisition module is to utilize photodiode to perform optical and electrical conversion. Light rays collected by an object through a Lens (Lens) are converted into electric signals through a CMOS photosensitive integrated circuit, and the electric signals are converted into digital image signals through an internal ISP (image signal processor) to be output. And then the image signals are sent to a digital signal processor for processing and are converted into standard YUV and RGB format image signals.
The Chinese patent (the authorized bulletin number is CN 203192798U and the authorized bulletin day is 2013.09.11) proposes a side contact CMOS image acquisition module, and an electronic element for positioning is arranged on a flexible circuit board of the patent, so that the traditional positioning method with positioning columns and positioning holes is abandoned, and the positioning precision is high and accurate. The reinforcement piece is provided with the sheetmetal all around and connects, has effectually improved anti-falling and anti-shock performance, and the product can be made ultra-small ultra-thin, with low costs.
However, the CMOS photosensitive chip of the above patent heats up after the circuit is turned on, and the CMOS photosensitive chip is located below the inside of the lens base, which is inconvenient for the CMOS photosensitive chip to dissipate heat, and the integrated CMOS photosensitive chip is damaged when working at high temperature for a long time, which seriously affects the service life of the CMOS photosensitive chip.
Disclosure of Invention
The present utility model is directed to a small CMOS image capturing module, so as to solve the above-mentioned problems in the prior art.
In order to achieve the above purpose, the present utility model provides the following technical solutions:
the utility model provides a small-size CMOS image acquisition module, includes the circuit board, CMOS sensitization chip is installed to the up end of circuit board, CMOS sensitization chip's externally mounted has the mirror seat, the screw thread connects soon on the mirror seat has the camera lens, the bottom of circuit board is connected with the graphite alkene heat conduction layer through insulating heat conduction glue film, the compound bonding in bottom on graphite alkene heat conduction layer has the metal wave-absorbing layer, the bottom on metal wave-absorbing layer is equipped with the cooling plate layer, the bottom fixedly connected with of cooling plate layer a plurality of fin, the heat dissipation opening has been seted up to the bottom of circuit board and the below that is located CMOS sensitization chip, insulating heat conduction silica gel layer fills the inside of heat dissipation opening.
Preferably, the radiating fins are provided with ventilation openings.
Preferably, the circuit board is made of ceramic materials.
Preferably, the inner wall of the heat dissipation through hole is fixedly connected with a plurality of reinforcing connecting columns.
Preferably, the upper end face of the graphene heat conduction layer is provided with a plurality of bayonets, the upper end face of the metal wave-absorbing layer is integrally connected with a plurality of clamping blocks, and the clamping blocks are clamped in the bayonets.
Preferably, the bottom of the metal wave absorbing layer is connected with four groups of lugs, positioning holes are formed in the lugs, opposite interfaces are formed in the front side and the back side of the left end face and the front side and the back side of the right end face of the heat radiating plate, locking threaded holes are formed in the inner walls of the opposite interfaces, and positioning screws are arranged between the locking threaded holes and the positioning holes in a threaded mode.
Compared with the prior art, the utility model has the beneficial effects that: the device is convenient to use, simple in structure and good in heat dissipation effect, the graphene heat conduction layer can conduct heat to the horizontal direction and dissipate heat, the metal wave-absorbing layer can transfer heat to the vertical direction, the heat dissipation area can be increased by the heat dissipation fins, the heat can be efficiently dissipated under the action of external air cooling, and the arranged metal wave-absorbing layer can have an electromagnetic resistance effect and avoid external waves from interfering with the CMOS photosensitive chip; the positioning screws can be used for conveniently disassembling and assembling the radiating plate layers, so that personnel can conveniently clean dust on the radiating fins; the fixture block card is established in the inside of bayonet socket, can improve the compound effect of metal wave absorbing layer and graphite alkene heat conduction layer.
Drawings
FIG. 1 is a schematic elevation view of a three-dimensional structure of the present utility model;
FIG. 2 is a schematic view of the bottom view of the three-dimensional structure of the present utility model;
FIG. 3 is a schematic view of a three-dimensional split structure of the present utility model;
fig. 4 is another view of the three-dimensional splitting structure of the present utility model.
In the figure: 1. a circuit board; 2. an insulating heat conducting adhesive layer; 3. a graphene thermally conductive layer; 4. a metal wave-absorbing layer; 5. a heat-dissipating plate layer; 6. a heat radiation fin; 7. a lens base; 8. a lens; 9. a vent; 10. a CMOS photosensitive chip; 11. a set screw; 12. a bayonet; 13. a clamping block; 14. an interface; 15. a heat dissipation through hole; 16. reinforcing the connection post.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-4, the present utility model provides a technical solution:
the utility model provides a small-size CMOS image acquisition module, including circuit board 1, CMOS sensitization chip 10 is installed to the up end of circuit board 1, CMOS sensitization chip 10's externally mounted has mirror mount 7, the screw thread has connect lens 8 soon on the mirror mount 7, the bottom of circuit board 1 is connected with graphite alkene heat conduction layer 3 through insulating heat conduction glue film 2, the compound bonding in bottom of graphite alkene heat conduction layer 3 has metal wave-absorbing layer 4, the bottom of metal wave-absorbing layer 4 is equipped with cooling plate layer 5, a plurality of radiating fins 6 of bottom fixedly connected with of cooling plate layer 5, cooling through hole 15 has been seted up to the bottom of circuit board 1 and the below that lies in CMOS sensitization chip 10, insulating heat conduction silica gel film 2 fills the inside of cooling through hole 15.
The heat that CMOS sensitization chip during operation produced will be given graphite alkene heat conduction layer 3 and metal wave absorbing layer 4 through insulating heat conduction silica gel layer 2, graphite alkene heat conduction layer 3 can be with the heat conduction heat dissipation of heat to the horizontal direction, metal wave absorbing layer 4 is with the heat transfer of vertical direction, metal wave absorbing layer 4 gives heat transfer to heat dissipation sheet layer 5, the bottom of heat dissipation sheet layer 5 is connected with a plurality of fin 6, fin 6 can improve heat radiating area, and then can carry out high-efficient heat dissipation with the heat under the effect of outside forced air cooling, avoid the heat gathering in CMOS sensitization chip 10, lead to the too high damage of temperature of CMOS sensitization chip 10, effectively improve the life of CMOS sensitization chip 10, the metal wave absorbing layer 4 of setting can have anti-electromagnetic effect, avoid the external wave to disturb CMOS sensitization chip 10.
The vent 9 is arranged on the radiating fin 6, and the arranged vent 9 can facilitate the air flow generated by external air cooling equipment, so that the radiating effect of the radiating plate layer 5 can be improved.
The circuit board 1 is made of ceramic material, and the ceramic has the capability of insulating and conducting heat.
The inner wall fixedly connected with a plurality of enhancement spliced pole 16 of heat dissipation opening 15, a plurality of enhancement spliced poles 16 that set up can improve insulating heat conduction silica gel layer 2 and circuit board 1's joint strength.
The upper end face of the graphene heat conduction layer 3 is provided with a plurality of bayonets 12, the upper end face of the metal wave-absorbing layer 4 is integrally connected with a plurality of clamping blocks 13, and the clamping blocks 13 are clamped in the bayonets 12.
The clamping block 13 is clamped in the bayonet 12, so that the composite effect of the metal wave-absorbing layer 4 and the graphene heat conducting layer 3 can be improved.
The bottom of the metal wave-absorbing layer 4 is connected with four groups of lugs 15, positioning holes are formed in the lugs 15, opposite interfaces 14 are formed in the front and back sides of the left end face and the front and back sides of the right end face of the heat dissipation plate 6, locking threaded holes are formed in the inner walls of the opposite interfaces 14, and positioning screws 11 are arranged between the locking threaded holes and the positioning holes in a threaded mode.
The heat radiation plate layer 5 can be conveniently disassembled and assembled through the positioning screw 11, so that a person can conveniently clean dust on the heat radiation fins 6.
Working principle: the heat generated by the CMOS photosensitive chip during operation is transferred to the graphene heat conduction layer 3 and the metal wave absorbing layer 4 through the insulating heat conduction silica gel layer 2, the graphene heat conduction layer 3 can conduct heat and dissipate heat in the horizontal direction, the metal wave absorbing layer 4 conducts heat in the vertical direction, the metal wave absorbing layer 4 conducts heat to the heat dissipation plate layer 5, the bottom of the heat dissipation plate layer 5 is connected with a plurality of heat dissipation fins 6, the heat dissipation area can be increased by the heat dissipation fins 6, the heat can be efficiently dissipated under the action of external air cooling, the heat is prevented from being accumulated in the CMOS photosensitive chip 10, the temperature of the CMOS photosensitive chip 10 is prevented from being damaged too high, the service life of the CMOS photosensitive chip 10 is effectively prolonged, and the arranged metal wave absorbing layer 4 can have an electromagnetic resistance effect and prevent external waves from interfering the CMOS photosensitive chip 10; the upper end face of the graphene heat conduction layer 3 is provided with a plurality of bayonets 12, the upper end face of the metal wave absorbing layer 4 is integrally connected with a plurality of clamping blocks 13, and the clamping blocks 13 are clamped in the bayonets 12; the positioning screws 11 can facilitate the disassembly and assembly of the radiating plate layers 5, so that the dust on the radiating fins 6 can be cleaned conveniently by personnel; the ventilation opening 9 can facilitate the wind flow generated by external air cooling equipment, and further can improve the heat dissipation effect of the heat dissipation plate layer 5.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The small CMOS image acquisition module comprises a circuit board (1), and is characterized in that: the CMOS light-sensitive chip (10) is installed to the up end of circuit board (1), the externally mounted of CMOS light-sensitive chip (10) has mirror seat (7), screw thread connects soon on mirror seat (7) has camera lens (8), the bottom of circuit board (1) is connected with graphite alkene heat conduction layer (3) through insulating heat conduction silica gel layer (2), the compound bonding in bottom of graphite alkene heat conduction layer (3) has metal to inhale ripples layer (4), the bottom of metal to inhale ripples layer (4) is equipped with heat dissipation sheet layer (5), the bottom fixedly connected with of heat dissipation sheet layer (5) a plurality of radiating fins (6), heat dissipation opening (15) have been seted up to the bottom of circuit board (1) and are located the below of CMOS light-sensitive chip (10), inside that heat dissipation opening (15) was filled in insulating heat conduction silica gel layer (2).
2. The small CMOS image acquisition module of claim 1, wherein: the radiating fins (6) are provided with ventilation openings (9).
3. The small CMOS image acquisition module of claim 2, wherein: the circuit board (1) is made of ceramic materials.
4. A compact CMOS image acquisition module according to claim 3, wherein: the inner wall of the heat dissipation through hole (15) is fixedly connected with a plurality of reinforcing connecting columns (16).
5. The small CMOS image acquisition module according to claim 4, wherein: the upper end face of the graphene heat conduction layer (3) is provided with a plurality of bayonets (12), the upper end face of the metal wave-absorbing layer (4) is integrally connected with a plurality of clamping blocks (13), and the clamping blocks (13) are clamped inside the bayonets (12).
6. The small CMOS image acquisition module according to claim 5, wherein: the bottom of metal wave absorbing layer (4) is connected with four sets of lugs (17), set up the locating hole on lug (17), left end front and back side and right end front and back side of heat dissipation sheet layer (5) all have seted up interface (14), locking screw hole has been seted up to the inner wall of interface (14), and set screw (11) are worn to be equipped with to the screw thread between locking screw hole and the locating hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320136434.9U CN219873534U (en) | 2023-01-13 | 2023-01-13 | Small CMOS image acquisition module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320136434.9U CN219873534U (en) | 2023-01-13 | 2023-01-13 | Small CMOS image acquisition module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219873534U true CN219873534U (en) | 2023-10-20 |
Family
ID=88320754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320136434.9U Active CN219873534U (en) | 2023-01-13 | 2023-01-13 | Small CMOS image acquisition module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219873534U (en) |
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2023
- 2023-01-13 CN CN202320136434.9U patent/CN219873534U/en active Active
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