CN219363874U - Vertical silicon carbide high-temperature annealing furnace device - Google Patents
Vertical silicon carbide high-temperature annealing furnace device Download PDFInfo
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- CN219363874U CN219363874U CN202320415608.5U CN202320415608U CN219363874U CN 219363874 U CN219363874 U CN 219363874U CN 202320415608 U CN202320415608 U CN 202320415608U CN 219363874 U CN219363874 U CN 219363874U
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Abstract
The application relates to a vertical silicon carbide high-temperature annealing furnace device, which comprises an upper chamber and a lower chamber which are vertically arranged up and down, wherein a furnace body is arranged in the upper chamber, and a first chamber door and a second chamber door are respectively arranged at two ends of the furnace body in the upper chamber; a heater is arranged on the outer side of the furnace body in a surrounding manner, a heating cylinder with two open ends is arranged in the furnace body at the position opposite to the heater, and an insulating layer is arranged on the inner side of the furnace body in a surrounding manner at the position of the heating cylinder; the second chamber door is vertically and upwards fixed with a quartz supporting seat, a graphite heat insulation sheet and a wafer bracket in sequence on the inward side of the second chamber door; a lifting device for driving the second chamber door to open and close is arranged in the upper chamber, and the wafer support is arranged in the heating cylinder when the second chamber door is closed; the wafer support is arranged in the lower chamber when the second chamber door is opened; the high-temperature annealing furnace device has the advantages of high annealing temperature, high cooling speed, difficult pollution and the like.
Description
Technical Field
The application relates to the technical field of semiconductor annealing devices, in particular to a silicon carbide high-temperature annealing furnace device with a vertical structure.
Background
Silicon carbide (SiC) is one of the third generation wide bandgap semiconductor materials, has the advantages of large bandgap width, high thermal conductivity, high breakdown field strength, high saturated electron mobility, good chemical stability and the like, is a preferred semiconductor material for manufacturing high-performance power electronic devices, and is gradually replacing silicon-based electronic devices in some application fields. The silicon carbide power device has the characteristics of high temperature resistance, high voltage resistance and low loss, and has obvious advantages in the fields of new energy automobiles, photovoltaic power generation, smart grids, rail transit and the like.
Ion implantation is a key process in the development of silicon carbide devices. The displacement of lattice atoms is caused in the ion implantation process, and a certain degree of lattice damage is caused to the surface and the body of SiC after implantation, so that the performance of the device is affected. In order to increase the activation rate of the implanted ions and to eliminate defects caused by lattice damage, the SiC after implantation must be annealed at high temperatures. In high temperature annealing, the conditions of annealing are very important. In order to achieve a good annealing effect, the annealing temperature of SiC is generally required to be higher than 1500 ℃, a certain annealing time is maintained, and the requirements on the heating rate, the type of protective gas, the air pressure and the like are all met.
With the gradual mass production of 6-inch SiC single crystals and epitaxial wafers, siC semiconductor devices have also been rapidly developed and applied. The requirement for high-temperature annealing of the SiC device after ion implantation is gradually increased, and the traditional high-temperature annealing equipment has the defects of insufficient annealing temperature, low cooling rate and the like.
Disclosure of Invention
The utility model aims to overcome the defects in the prior art, and provides a vertical silicon carbide high-temperature annealing furnace device which can accurately control high-temperature annealing and improve the cooling rate. The following technical scheme is adopted:
the high-temperature annealing furnace device comprises an upper chamber and a lower chamber which are vertically arranged up and down, wherein a furnace body is arranged in the upper chamber, and a first chamber door and a second chamber door are respectively arranged at two ends of the furnace body in the upper chamber;
a heater is arranged on the outer side of the furnace body in a surrounding manner, a heating cylinder with two open ends is arranged in the furnace body at the position opposite to the heater, and an insulating layer is arranged on the inner side of the furnace body in a surrounding manner at the position of the heating cylinder;
the first chamber door is provided with a first temperature measuring interface, and the second chamber door is provided with a second temperature measuring interface; the lower chamber is a sealed chamber with a third chamber door arranged at one side, and a third temperature measuring interface is arranged on the lower chamber;
the second chamber door is vertically and upwards fixed with a quartz supporting seat, a graphite heat insulation sheet and a wafer bracket in sequence on the inward side of the second chamber door;
a lifting device for driving the second chamber door to open and close is arranged in the upper chamber, and the wafer support is arranged in the heating cylinder when the second chamber door is closed; the wafer support is disposed within the lower chamber when the second chamber door is opened.
In a preferred embodiment, a plurality of graphite support rods for fixing graphite heat insulation sheets are arranged between the quartz support base and the wafer support, and grooves are formed in the graphite heat insulation sheets.
In a preferred embodiment, the furnace body is provided with a first shielding gas inlet and a process gas inlet at one end near the second chamber door;
the furnace body is provided with a first air outlet at one end close to the first chamber door;
the lower chamber is provided with a second shielding gas inlet and a second gas outlet.
In a preferred embodiment, the first temperature measuring interface is provided with a high temperature interface and a low temperature interface, the second temperature measuring interface is a high temperature interface, and the third temperature measuring interface is a low temperature interface.
In a preferred embodiment, an upper heat-insulating layer is arranged at the upper end of the heating cylinder, and the upper heat-insulating layer is provided with a through hole.
In a preferred embodiment, the furnace body shell is a cylindrical quartz tube, the heat-insulating layer is a hard graphite carbon felt, and the heating cylinder and the wafer support are both made of graphite.
In a preferred embodiment, sealing flanges are respectively arranged at the connecting ends of the furnace body and the first chamber door and the second chamber door, and a water cooling device is arranged in each flange;
the first chamber door, the second chamber door and the flange plate are all made of stainless steel materials.
In a preferred embodiment, high temperature resistant sealing members are arranged between the first chamber door, the second chamber door and the furnace body cover, and between the third chamber door and the lower chamber cover, and the sealing members are O-shaped rubber rings.
In a preferred embodiment, the heater is a radio frequency induction heating coil, and the radio frequency induction heating coil is spirally wound on the outer side of the furnace body shell.
In a preferred embodiment, the wafer support is adapted to 6 inch silicon carbide wafers, the silicon carbide wafer capacity of the wafer support being 50 wafers.
In summary, the present application includes the following beneficial effects:
1. the high-temperature annealing furnace device for the silicon carbide with the vertical structure can meet the annealing process of various high-temperature, high-voltage and high-power silicon carbide devices, and has the advantages of high annealing temperature, high cooling speed, difficulty in pollution and the like.
2. The vertical annealing furnace device provided by the utility model adopts a structure with separated upper and lower chambers. The upper chamber maintains a high vacuum, and the wafer has a high cleanliness in the upper chamber. In the cooling process, the cooling rate is improved by utilizing the lower cavity with larger volume, the efficiency is increased, and the cost is saved.
3. The vertical annealing furnace device provided by the application can simultaneously meet the high-temperature annealing of about 50 silicon carbide wafers with 6 inches, the annealing temperature can reach 2000 ℃, the temperature can be quickly raised and precisely controlled in the whole high-temperature annealing process, the pressure range of the chamber is adjustable, the purposes of eliminating lattice damage caused by ion implantation and improving the activation rate of implanted ions are achieved, and therefore the performance of a silicon carbide device is improved.
Drawings
Fig. 1 is a schematic view of a vertical silicon carbide high-temperature annealing furnace device of the present embodiment.
Reference numerals illustrate: 1. a furnace body; 2. a heater; 3. a first chamber door; 4. a first flange; 5. a second chamber door; 6. a second flange; 7. a wafer support; 8. a graphite heat insulating sheet; 9. a quartz support base; 10. a heating cylinder; 11. an upper heat preservation layer; 12. a first sidewall insulating layer; 13. a second sidewall insulating layer; 14. a quartz ring; 15. a process gas inlet; 16. a first shielding gas inlet; 17. a first air outlet; 18. a first temperature measurement interface; 19. a second temperature measurement interface; 20. a third chamber door; 21. a second shielding gas inlet; 22. a second air outlet; 23. and a third temperature measuring interface.
Detailed Description
The utility model is further explained below with reference to the drawings and specific embodiments. The drawings of the present utility model are merely schematic to facilitate understanding of the present utility model, and specific proportions thereof may be adjusted according to design requirements. The definition of the context of the relative elements and the front/back of the figures described herein should be understood by those skilled in the art to refer to the relative positions of the elements and thus all the elements may be reversed to represent the same elements, which are all within the scope of the present disclosure.
The embodiment of the application discloses a vertical silicon carbide high-temperature annealing furnace device, and the application is further described in detail below with reference to fig. 1.
The utility model provides a vertical structure carborundum high temperature annealing stove device, the device comprises two upper and lower cavities, and the upper cavity comprises furnace body 1, heater 2, wafer support 7, graphite heat insulating sheet 8, quartz supporting seat 9, a heating tube 10 and heat preservation.
The shell of the furnace body 1 is a cylindrical quartz tube, and the quartz tube has high temperature resistance, corrosion resistance and good heat insulation property, and can effectively reduce heat conduction. The furnace body 1 is arranged in the upper cavity, a first cavity door 3 and a second cavity door 5 are respectively arranged on ports at the upper end and the lower end of the furnace body 1, and the first cavity door 3, the second cavity door 5 and the furnace body 1 form a main component part of the upper cavity.
The furnace body 1 is respectively sealed and fixed by a first flange 4 and a second flange 6 at two ends connected with a first chamber door 3 and a second chamber door 5, and water cooling devices are arranged inside the first flange 4 and the second flange 6. The chamber door and the flange plate are both made of stainless steel materials. High temperature resistant sealing elements are respectively arranged between the port covers of the first chamber door 3 and the second chamber door 5 and the furnace body 1, and are used for isolating the chamber from the external environment, and can be specifically O-shaped rubber sealing rubber rings.
The heater 2 surrounds the outer side of the shell of the furnace body 1, the heating cylinder 10 is arranged in the furnace body 1 and is correspondingly arranged at a section of the furnace body 1 where the heater 2 is arranged, when the heater 2 heats, the heating cylinder 10 generates heat, and the internal temperature of the heating cylinder rapidly rises to the temperature (1500-2000 ℃) required by the annealing process so as to realize high-temperature annealing of the silicon carbide wafer. Specifically, the heater 2 is a radio frequency heating coil, and the radio frequency heating coil surrounds the outer side of the casing of the furnace body 1 in a spiral shape, and the heating tube 10 is located in a central area of the radio frequency heating coil, so as to ensure uniformity of temperature in the heating tube 10.
The quartz supporting seat 9, the graphite heat insulation sheet 8 and the wafer support 7 are sequentially and fixedly arranged on the inner side surface of the second chamber door 5 along the vertical direction, a lifting device for driving the second chamber door to open and close is arranged on the upper chamber, and the second chamber door 5 is controlled to ascend and descend through a servo motor of the lifting device to realize opening and closing. When the second chamber door 5 is closed, the wafer support 7 is just inside the heat generating cylinder 10, and when the second chamber door 5 is opened, the wafer support 7 is separated from the heat generating cylinder 10 and placed in the lower chamber.
The lower chamber is a sealed chamber with a third chamber door 20 at one side, and a high temperature resistant sealing member is also arranged between the third chamber door 20 and the lower chamber cover, and the sealing member is used for isolating the chamber from the external environment, and can be specifically an O-shaped rubber sealing rubber ring.
Be provided with a plurality of graphite bracing pieces that are used for fixed graphite thermal-insulated piece 8 between this quartz supporting seat 9 and this wafer support 7, be provided with the fixed plate at the both ends of this graphite bracing piece, be provided with the mounting hole of fixing at the graphite bracing piece on this fixed plate, the quantity of this graphite thermal-insulated piece 8 can be adjusted as required, and is equipped with the slot on this graphite thermal-insulated piece 8, avoids by heater 2 induction heating.
The heat-insulating layer is arranged around the heating cylinder 10, and the heat-insulating layer is made of a high-purity graphite material and is made of a hard composite graphite carbon felt, so that the heat-insulating layer has the advantages of being not prone to layering, high in strength and good in heat insulation effect, and can reduce heat transfer from the inside of the heating cylinder 10 to the outside of the furnace body 1 and the sealing rubber ring. And the heating cylinder 10 and the wafer support 7 are graphite pieces and are made of high-purity and high-strength graphite materials, and the surfaces of the heating cylinder 10 and the wafer support are polished and coated, so that the heating cylinder is good in stability and corrosion-resistant. The heat generating cylinder 10 has a cylindrical structure with two open ends.
In a specific embodiment, besides the side wall insulation layer attached to the outer side of the heating cylinder 10, an upper insulation layer 11 is also arranged on the upper end opening side of the heating cylinder 10, the insulation layers on the side wall of the heating cylinder 10 are sequentially arranged into a first side wall insulation layer 12 and a second side wall insulation layer 13 from inside to outside, a quartz ring 14 is arranged at the bottom of the furnace body 1, and the side wall insulation layers are placed on the quartz ring 14 to play a role of fixing and supporting.
The middle of the upper heat preservation layer 11 is provided with a through hole, and the through hole of the upper heat preservation layer 11 can be used for measuring temperature and guaranteeing the fluidity of gas. Meanwhile, through holes are formed in the middle of the quartz supporting seat 9 and the graphite heat insulation sheet 8, and the through holes in the quartz supporting seat 9 and the graphite heat insulation sheet 8 can be used for measuring temperature and guaranteeing the fluidity of gas. The temperature inside the heating cylinder 10 is measured through the through holes, the temperature of the two end areas of the wafer support 7 inside the heating cylinder 10 can be monitored in real time, and the temperature difference of the two ends of the wafer support 7 is balanced by controlling the heating power according to the set process temperature, so that the consistency of the temperatures of the wafer support 7 is realized. The upper heat preservation layer 11 and the side wall heat preservation layer can be used for isolating the heating cylinder 10 and the furnace body 1 so as to ensure that the inside of the heating cylinder 10 has good heat preservation effect and good temperature uniformity.
The first temperature measurement interface 18 is separately provided with a high temperature interface and a low temperature interface, the second temperature measurement interface 19 is a high temperature interface, and the third temperature measurement interface 23 is a low temperature interface.
Specifically, the first chamber door 3 is provided with a first air outlet 17 and a first temperature measuring interface 18, and the first air outlet 17 is communicated with the shell of the furnace body 1. The second chamber door 5 is provided with a process gas inlet 15, a first protective gas inlet 16 and a second temperature measuring interface 19, and the process gas inlet 15 and the first protective gas inlet 16 are both communicated with the shell of the furnace body 1 so as to realize the flow of gas inside the heating cylinder 10. The lower chamber is provided with a second shielding gas inlet 21, a second gas outlet 22 and a third temperature measuring interface 23.
Before heating, nitrogen (N) is used as protective gas 2 ) The upper cavity and the lower cavity are repeatedly cleaned, so that the inside of the cavity is guaranteed to have higher cleanliness and vacuum degree. The process gas used in the high temperature annealing process can be selected from argon (Ar) or hydrogen (H) 2 ) The pressure of the chamber can be controlled to be in the range of 50-500Torr. The first temperature measuring interface 18 and the second temperature measuring interface 19 can accurately measure the temperature of the two ends of the heating cylinder 10 so as to accurately control the high-temperature annealing temperature and be beneficial to annealing of the silicon carbide wafer. The device can accurate control temperature and pressure through temperature measurement interface and air inlet to through the heat loss of effective control heat of heat preservation, it is firm reliable.
The embodiment of the application also provides a high-temperature annealing process of the silicon carbide wafer, which comprises the following steps of:
step 1, neatly placing a silicon carbide wafer to be annealed at a high temperature on a wafer support 7;
step 2, closing the second chamber door 5 to enable the wafer support 7 to be placed in the heating cylinder 10;
step 3, setting an annealing process flow, including setting temperature, pressure intensity, process gas type and gas flow;
and 4, automatically controlling the heater 2 to quickly raise the temperature in the heating cylinder 10 to 1500-2000 ℃ according to the process flow, controlling the pressure range to be 50-500Torr, maintaining for 0.5-2h, and then cooling to room temperature by the annealing device.
The wafer support 7 provided herein is adapted for 6 inch silicon carbide wafers, and 50 6 inch silicon carbide wafers, which are 6 inch silicon carbide substrate slices or epitaxial wafers, may be placed on the wafer support 7.
The annealing temperature can reach 2000 ℃ at most, and in the whole high-temperature annealing process, the temperature can be quickly increased and precisely controlled, the purpose of repairing and eliminating lattice damage caused by ion implantation by high-temperature annealing is realized, and the performance of a silicon carbide device is improved.
The vertical annealing furnace device with the separated upper and lower chambers is adopted. The upper chamber maintains a high vacuum, and the wafer has a high cleanliness in the upper chamber. In the cooling process, the cooling rate is improved by utilizing the lower cavity with larger volume, the efficiency is increased, and the cost is saved.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (10)
1. A vertical structure carborundum high temperature annealing stove device, its characterized in that: the furnace comprises an upper chamber and a lower chamber which are vertically arranged up and down, wherein a furnace body is arranged in the upper chamber, and a first chamber door and a second chamber door are respectively arranged at two ends of the furnace body in the upper chamber;
a heater is arranged on the outer side of the furnace body in a surrounding manner, a heating cylinder with two open ends is arranged in the furnace body at the position opposite to the heater, and an insulating layer is arranged on the inner side of the furnace body in a surrounding manner at the position of the heating cylinder;
the first chamber door is provided with a first temperature measuring interface, and the second chamber door is provided with a second temperature measuring interface; the lower chamber is a sealed chamber with a third chamber door arranged at one side, and a third temperature measuring interface is arranged on the lower chamber;
the second chamber door is vertically and upwards fixed with a quartz supporting seat, a graphite heat insulation sheet and a wafer bracket in sequence on the inward side of the second chamber door;
a lifting device for driving the second chamber door to open and close is arranged in the upper chamber, and the wafer support is arranged in the heating cylinder when the second chamber door is closed; the wafer support is disposed within the lower chamber when the second chamber door is opened.
2. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: a plurality of graphite supporting rods for fixing graphite heat insulation sheets are arranged between the quartz supporting seat and the wafer support, and grooves are formed in the graphite heat insulation sheets.
3. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: a first protective gas inlet and a process gas inlet are formed in one end, close to the second chamber door, of the furnace body;
the furnace body is provided with a first air outlet at one end close to the first chamber door;
the lower chamber is provided with a second shielding gas inlet and a second gas outlet.
4. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: the first temperature measuring interface is provided with a high-temperature interface and a low-temperature interface, the second temperature measuring interface is a high-temperature interface, and the third temperature measuring interface is a low-temperature interface.
5. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: an upper heat preservation layer is arranged at the upper end of the heating cylinder, and a through hole is formed in the upper heat preservation layer.
6. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: the furnace body shell is provided with a cylindrical quartz tube, the heat preservation layer is made of hard graphite carbon felt, and the heating cylinder and the wafer support are made of graphite.
7. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: the furnace body is respectively provided with a sealing flange plate at the connecting end of the furnace body with the first chamber door and the second chamber door, and a water cooling device is arranged in the flange plate;
the first chamber door, the second chamber door and the flange plate are all made of stainless steel materials.
8. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: the high-temperature-resistant sealing elements are arranged between the first chamber door, the second chamber door and the furnace body cover, and between the third chamber door and the lower chamber cover, and the sealing elements are O-shaped rubber rings.
9. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: the heater is a radio frequency induction heating coil, and the radio frequency induction heating coil surrounds the outer side of the furnace body shell in a spiral shape.
10. A vertical structural silicon carbide high temperature annealing furnace device according to claim 1, wherein: the wafer holder was fitted with 6 inch silicon carbide wafers, which had a silicon carbide wafer capacity of 50 wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320415608.5U CN219363874U (en) | 2023-03-08 | 2023-03-08 | Vertical silicon carbide high-temperature annealing furnace device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320415608.5U CN219363874U (en) | 2023-03-08 | 2023-03-08 | Vertical silicon carbide high-temperature annealing furnace device |
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| Publication Number | Publication Date |
|---|---|
| CN219363874U true CN219363874U (en) | 2023-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320415608.5U Active CN219363874U (en) | 2023-03-08 | 2023-03-08 | Vertical silicon carbide high-temperature annealing furnace device |
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| Country | Link |
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| CN (1) | CN219363874U (en) |
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2023
- 2023-03-08 CN CN202320415608.5U patent/CN219363874U/en active Active
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