CN219224992U - Diagnostic device for battery system - Google Patents
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- CN219224992U CN219224992U CN202223241705.1U CN202223241705U CN219224992U CN 219224992 U CN219224992 U CN 219224992U CN 202223241705 U CN202223241705 U CN 202223241705U CN 219224992 U CN219224992 U CN 219224992U
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Abstract
The utility model relates to a diagnostic device of a battery system, which comprises a driving chip and a voltage detection circuit; the control end of the driving chip is connected with the controlled end of the transistor array of the battery system, and the transistors in the transistor array are turned on and off; the voltage detection circuit is respectively connected with the voltage input end and the voltage output end of the transistor array, and respectively acquires the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in an on state and the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in an off state. The condition of the transistor array is judged through the collected voltage value, the comprehensive fault diagnosis of the transistor array is realized, and the diagnosis device has the advantages of simple principle, simple structure, convenience in realization and reduction of the fault diagnosis cost of the transistor array.
Description
Technical Field
The present utility model relates to the field of battery management, and more particularly, to a diagnostic device for a battery system.
Background
The battery system is also called as a battery nurse or a battery manager, and is mainly used for intelligently managing and maintaining each battery unit, preventing the battery units from being overcharged and overdischarged, prolonging the service life of the battery and monitoring the state of the battery. Generally, a battery system includes a control module, a display module, a wireless communication module, an electrical device, a battery pack for supplying power to the electrical device, and an acquisition module for acquiring battery information of the battery pack. The reliability of the high-side NMOS (N-Metal-Oxide-semiconductor) transistor switch array is critical to the performance of the electromagnetic system as an important component of the battery system, so that the reliability of the high-side NMOS transistor switch array needs to be diagnosed, and the conventional technology generally adopts a multimeter to measure the quality of the battery system. However, the conventional diagnostic method cannot effectively and comprehensively diagnose the reliability of the high-side NMOS switch array.
Disclosure of Invention
Based on this, it is necessary to provide a diagnostic device of a battery system, which includes a driving chip and a voltage detection circuit, for the problem that the reliability of the high-side NMOS switch array cannot be effectively and comprehensively diagnosed by the conventional diagnostic method;
the control end of the driving chip is connected with the controlled end of the transistor array of the battery system and is used for driving the on or off of the transistors in the transistor array;
the voltage detection circuit is respectively connected with the voltage input end and the voltage output end of the transistor array, and is used for respectively collecting the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in the on state and respectively collecting the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in the off state.
In one embodiment, the transistor array includes a first transistor group and a second transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is an intermediate detection end;
the control end of the driving chip is respectively connected with the controlled end of the first transistor group and the controlled end of the second transistor group;
The voltage detection circuit is also connected with the intermediate detection end and is used for collecting the voltage value of the intermediate detection end in the on state of the transistors in the transistor array and collecting the voltage value of the intermediate detection end in the off state of the transistors in the transistor array.
In one embodiment, the driving chip is used for driving the first transistor group and the second transistor group to be turned off, and the voltage detection circuit is used for respectively acquiring the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The driving chip is used for driving the first transistor group and the second transistor group to be conducted, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The driving chip is used for driving the first transistor group to be conducted and the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The driving chip is used for driving the first transistor group to be turned off and the second transistor group to be turned on, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end.
In one embodiment, the transistor array includes a first transistor group, a second transistor group, a third transistor group, and a fourth transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is a first middle detection end; the third transistor group is connected with the fourth transistor group, and the connection point of the third transistor group and the fourth transistor group is a second middle detection end;
the control end of the driving chip is respectively connected with the controlled end of the first transistor group, the controlled end of the second transistor group, the controlled end of the third transistor group and the controlled end of the fourth transistor group;
the voltage detection circuit is further connected with the first intermediate detection end and the second intermediate detection end and is used for collecting the voltage value of the first intermediate detection end of the transistors in the transistor array in the on state, collecting the voltage value of the first intermediate detection end of the transistors in the transistor array in the off state, collecting the voltage value of the second intermediate detection end of the transistors in the transistor array in the on state and collecting the voltage value of the second intermediate detection end of the transistors in the transistor array in the off state.
In one embodiment, the driving chip is used for driving the first transistor group, the second transistor group, the third transistor group and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The driving chip is used for driving the first transistor group to be conducted, driving the second transistor, the third transistor and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The driving chip is used for driving the third transistor group to be conducted, driving the first transistor, the second transistor and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end.
In one embodiment, the diagnostic device of the battery system further comprises a switching circuit;
the control end of the driving chip is connected with the controlled end of the transistor array of the battery system through a switch circuit; the switch circuit is closed so as to enable the transistors in the drive transistor array of the drive chip to be conducted; the switching circuit is turned off to turn off the transistors in the driving transistor array of the driving chip.
In one embodiment, the transistor array includes a first transistor group and a second transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is an intermediate detection end;
the switching circuit comprises a first switching circuit and a second switching circuit;
the control end of the driving chip is connected with the controlled end of the first transistor group through a first switch circuit; the control end of the driving chip is connected with the controlled end of the second transistor group through a second switch circuit;
the voltage detection circuit is also connected with the middle detection end and is used for collecting the voltage value of the middle detection end of the transistor in the transistor array in the on state and collecting the voltage value of the middle detection end of the transistor in the transistor array in the off state.
In one embodiment, the first switch circuit and the second switch circuit are disconnected, the driving chip is used for driving the first transistor group and the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The first switch circuit and the second switch circuit are closed, the driving chip is used for driving the first transistor group and the second transistor group to be conducted, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The first switch circuit is closed, the driving chip is used for driving the first transistor group to be turned on, the second switch circuit is turned off, the driving chip is used for driving the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The first switch circuit is opened, the driving chip is used for driving the first transistor group to be turned off, the second switch circuit is turned on, the driving chip is used for driving the second transistor group to be turned on, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end.
In one embodiment, the transistor array includes a first transistor group, a second transistor group, a third transistor group, and a fourth transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is a first middle detection end; the third transistor group is connected with the fourth transistor group, and the connection point of the third transistor group and the fourth transistor group is a second middle detection end;
the switching circuit comprises a first switching circuit, a second switching circuit, a third switching circuit and a fourth switching circuit; the driving chip comprises a first driving chip and a second driving chip;
The control end of the first driving chip is connected with the controlled end of the first transistor group through a first switch circuit; the control end of the first driving chip is connected with the controlled end of the second transistor group through a second switch circuit;
the control end of the second driving chip is connected with the controlled end of the third transistor group through a third switch circuit; the control end of the second driving chip is connected with the controlled end of the fourth transistor group through a fourth circuit;
the voltage detection circuit is further connected with the first middle detection end and the second middle detection end, and is used for collecting the voltage value of the first middle detection end in the on state of the transistors in the transistor array, collecting the voltage value of the first middle detection end in the off state of the transistors in the transistor array, collecting the voltage value of the second middle detection end in the on state of the transistors in the transistor array, and collecting the voltage value of the second middle detection end in the off state of the transistors in the transistor array.
In one embodiment, the first switch circuit and the second switch circuit are turned off, the first driving chip is used for driving the first transistor group and the second transistor to be turned off, the third switch circuit and the fourth switch circuit are turned off, the second driving chip is used for driving the third transistor group and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The first switch circuit is closed, the first driving chip is used for driving the first transistor group to be turned on, the second switch circuit is turned off, the first driving chip is used for driving the second transistor group to be turned off, the third switch circuit and the fourth switch circuit are turned off, the second driving chip is used for driving the third transistor and the fourth transistor group to be turned off, and the voltage detection circuit respectively collects the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first intermediate detection end and the voltage value of the second intermediate detection end; or (b)
The first switch circuit and the second switch circuit are disconnected, the first driving chip is used for driving the first transistor group and the second transistor to be turned off, the third switch circuit is turned on, the second driving chip is used for driving the third transistor group to be turned on, the fourth switch circuit is turned off, the second driving chip is used for driving the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end.
One of the above technical solutions has the following advantages and beneficial effects:
the diagnostic device of the battery system provided by the embodiments of the application comprises a driving chip and a voltage detection circuit. The control end of the driving chip is connected with the controlled end of the transistor array of the battery system, and the transistors in the transistor array are turned on and off. The voltage detection circuit is respectively connected with the voltage input end and the voltage output end of the transistor array, and respectively acquires the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in an on state and the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in an off state. The condition of the transistor array is judged through the collected voltage value, the comprehensive fault diagnosis of the transistor array is realized, and the diagnosis device has the advantages of simple principle, simple structure, convenience in realization and reduction of the fault diagnosis cost of the transistor array.
Drawings
The foregoing and other objects, features and advantages of the present application will be apparent from the more particular description of the preferred embodiments of the present application as illustrated in the accompanying drawings. Like reference numerals refer to like parts throughout the drawings, and the drawings are not intentionally drawn to scale on actual size or the like, emphasis instead being placed upon illustrating the subject matter of the present application.
Fig. 1 is a first structural schematic diagram of a diagnostic device of a battery system in an embodiment of the present application.
Fig. 2 is a second structural schematic diagram of a diagnostic device of the battery system in the embodiment of the present application.
Fig. 3 is a third structural schematic diagram of a diagnostic device of the battery system in the embodiment of the present application.
Fig. 4 is a fourth structural schematic diagram of a diagnostic device of a battery system in an embodiment of the present application.
Fig. 5 is a fifth structural schematic diagram of a diagnostic device of a battery system in an embodiment of the present application.
Fig. 6 is a sixth structural schematic diagram of a diagnostic device of a battery system in an embodiment of the present application.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to and integrated with the other element or intervening elements may also be present. The terms "disposed," "one end," "the other end," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
For the failure and failure mode of the transistor that cannot be identified effectively by the conventional technology, as shown in fig. 1, the present application provides a diagnostic device of a battery system, which includes a driving chip 11 and a voltage detection circuit 13. In one example, the battery system includes a battery pack 23, a transistor array 21, and a load 25. The battery pack 23, the transistor array 21, and the load 25 are connected to form a loop.
Wherein the driving chip 11 is used for driving the transistor. Specifically, the control terminal of the driving chip 11 is connected to the controlled terminal of the transistor array 21 of the battery system, and the transistors in the transistor array 21 are turned on and off. In one example, the transistors in the transistor array 21 are NMOS type transistors, and the corresponding driver chip 11 is a driver chip 11 that drives NMOS transistors.
The voltage detection circuit 13 is configured to measure and collect voltage values, specifically, the voltage detection circuit 13 is respectively connected to a voltage input end and a voltage output end of the transistor array 21, and the voltage detection circuit 13 respectively collects voltage values of the voltage input end and the voltage output end of the transistors in the transistor array 21 in an on state and voltage values of the voltage input end and the voltage output end of the transistors in the transistor array 21 in an off state. In one example, the voltage detection circuit 13 is a voltmeter.
In this example, the driving chip 11 directly drives the transistor array 21, and for the transistor array 21 of different structures, at least two diagnostic modes are divided:
first, as shown in fig. 2, the transistor array 21 includes a first transistor group 211 and a second transistor group 213. The first transistor group 211 is connected to the second transistor group 213, and a connection point of the first transistor group 211 and the second transistor group 213 is an intermediate detection end, in other words, a voltage value between the first transistor group 211 and the second transistor group 213 needs to be acquired. In one example, the first transistor group 211 and the second transistor group 213 are formed by a plurality of transistors connected in parallel. In this case, the voltage input terminal of the transistor array 21 may be the input terminal of the first transistor group 211, and the voltage output terminal of the transistor array 21 may be the output terminal of the second transistor group 213.
The control terminal of the driving chip 11 is connected to the controlled terminal of the first transistor group 211 and the controlled terminal of the second transistor group 213, respectively. The voltage detection circuit 13 is further connected to an intermediate detection terminal, and collects the voltage value of the intermediate detection terminal in the on state of the transistors in the transistor array 21. Collecting voltage value of transistors in transistor array 21 at intermediate detection end in turn-off state
In this case, the failure diagnosis is performed by:
1. the driving chip 11 drives the first transistor group 211 and the second transistor group 213 to turn off, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, and the voltage value of the intermediate detection terminal. If the voltage value at the voltage input terminal is equal to the voltage value at the intermediate detection terminal, it indicates that the first transistor group 211 has a short-circuit fault. If the voltage value of the acquisition voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the intermediate detection terminal are equal, it is indicated that the first transistor group 211 and the second transistor group have a short-circuit fault. If the voltage value at the voltage output terminal and the voltage value at the intermediate detection terminal are equal to zero, it is indicated that the first transistor group 211 and the second transistor group have no faults.
2. The driving chip 11 drives the first transistor group 211 and the second transistor group 213 to be turned on, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, and the voltage value of the intermediate detection terminal. If the voltage value of the intermediate detection terminal is equal to zero, it indicates that the first transistor group 211 has an open circuit fault. If the voltage value of the intermediate detection terminal is equal to the voltage value of the voltage input terminal, and the voltage value of the voltage output terminal + the voltage drop of the transistor is less than or equal to the voltage value of the intermediate detection terminal, it indicates that the first transistor group 211 has no fault, and the second transistor group 213 has an open circuit or abnormal driving fault. If the voltage value of the acquisition voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the intermediate detection terminal are equal, it is indicated that the first transistor group 211 and the second transistor group have no faults.
3. The driving chip 11 drives the first transistor group 211 to be turned on and the second transistor group 213 to be turned off, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the middle detection terminal. And if the voltage value of the acquisition voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end are equal, indicating that the second transistor has a short circuit fault. If the voltage value of the voltage input end is equal to the voltage value of the middle detection end, the voltage value of the middle detection end is equal to the voltage value of the voltage output end plus the voltage drop of the transistor, the second transistor is free from faults.
4. The driving chip 11 drives the first transistor group 211 to be turned off and the second transistor group 213 to be turned on, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the middle detection terminal. And if the voltage value of the acquisition voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end are equal, the first transistor is indicated to have a short circuit fault. If the voltage value of the voltage input terminal + the voltage drop of the transistor is equal to the voltage value of the middle detection terminal, the voltage value of the middle detection terminal is equal to the voltage value of the voltage output terminal, the first transistor is indicated to have no fault.
Second, as shown in fig. 3, the transistor array 21 includes a first transistor group 211, a second transistor group 213, a third transistor group 215, and a fourth transistor group 217. Wherein the first transistor group 211 is connected to the second transistor group 213, and a connection point of the first transistor group 211 and the second transistor group 213 is a first intermediate detection end; the third transistor group 215 is connected to the fourth transistor group 217, and the connection point of the third transistor group 215 and the fourth transistor group 217 is the second intermediate detection terminal. In other words, it is necessary to acquire the voltage value between the first transistor group 211 and the second transistor group 213, and the voltage value between the third transistor group 215 and the fourth transistor group 217. In one example, the first transistor group 211, the second transistor group 213, the third transistor group 215, and the fourth transistor group 217 are formed by a plurality of transistors connected in parallel. In this case, the voltage input terminal of the transistor array 21 may be the input terminal of the first transistor group 211, and the voltage output terminal of the transistor array 21 may be the output terminal of the second transistor group 213.
The control terminal of the driving chip 11 is connected to the control terminal of the first transistor group 211, the control terminal of the second transistor group 213, the control terminal of the third transistor group 215, and the control terminal of the fourth transistor group 217, respectively. The voltage detection circuit 13 is further connected to the first intermediate detection end and the second intermediate detection end, and collects a voltage value of the first intermediate detection end in a state that the transistors in the transistor array 21 are turned on, collects a voltage value of the first intermediate detection end in a state that the transistors in the transistor array 21 are turned off, collects a voltage value of the second intermediate detection end in a state that the transistors in the transistor array 21 are turned on, and collects a voltage value of the second intermediate detection end in a state that the transistors in the transistor array 21 are turned off.
In this case, the failure diagnosis is performed by:
1. the driving chip 11 drives the first transistor group 211, the second transistor, the third transistor and the fourth transistor group 217 to be turned off, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal and the voltage value of the second intermediate detection terminal. If the voltage value of the voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the first intermediate detection terminal are at high level, the voltage value of the second intermediate detection terminal is at low level, which indicates that the first transistor group 211 has a short circuit fault. If the voltage value of the input terminal, the voltage value of the voltage output terminal, and the voltage value of the second intermediate detection terminal are high, the voltage value of the first intermediate detection terminal is low, which indicates that the third transistor group 215 has a short-circuit fault.
2. The driving chip 11 drives the first transistor group 211 to be turned on, and drives the second transistor, the third transistor and the fourth transistor group 217 to be turned off, and the voltage detection circuit respectively collects a voltage value of the voltage input terminal, a voltage value of the voltage output terminal, a voltage value of the first intermediate detection terminal and a voltage value of the second intermediate detection terminal. If the voltage value of the voltage input terminal is at a high level, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are at a low level, it is indicated that the first transistor group 211 has an open circuit fault. If the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are high levels, it is indicated that the fourth transistor group 217 has a short-circuit fault. If the voltage value of the voltage input terminal and the voltage value of the first intermediate detection terminal are at high level and the voltage value of the voltage output terminal and the voltage value of the second intermediate detection terminal are at low level, it is indicated that the second transistor group 213 has an open circuit fault.
3. The driving chip 11 drives the third transistor group 215 to be turned on, and drives the first transistor, the second transistor and the fourth transistor group 217 to be turned off, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal and the voltage value of the second intermediate detection terminal. If the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are high levels, it is indicated that the second transistor group 213 has a short-circuit fault. If the voltage value of the voltage input terminal is at a high level, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are at a low level, it is indicated that the third transistor group 215 has an open circuit fault. If the voltage value of the input terminal and the voltage value of the second intermediate detection terminal are at high level, the voltage value of the voltage output terminal and the voltage value of the first intermediate detection terminal are at low level, which indicates that the fourth transistor group 217 has an open circuit fault.
In one example, as shown in fig. 4, the diagnostic device of the battery system further includes a switching circuit 15. The switching circuit 15 is used as a control for the driving chip 11 to drive the transistor on or off. In one example, the switching circuit 15 may be implemented with a single pole single throw switch, a magnetically attractable switch, a semiconductor switch, a transistor switch. In one example, the closing and opening of the switching circuit 15 may be controlled by the driver chip 11.
In this example, the control terminal of the driving chip 11 is connected to the controlled terminal of the transistor array 21 of the battery system through the switching circuit 15; the switch circuit 15 is closed, and the driving chip 11 drives the transistors in the transistor array 21 to be conducted; the switching circuit 15 is turned off and the driving chip 11 drives the transistors in the transistor array 21 to be turned off.
In this example, the driving chip 11 drives the transistor array 21 through the switching circuit 15, and for the transistor array 21 of different structures, at least two diagnostic modes are divided:
first, as shown in fig. 5, the transistor array 21 includes a first transistor group 211 and a second transistor group 213. The first transistor group 211 is connected to the second transistor group 213, and a connection point of the first transistor group 211 and the second transistor group 213 is an intermediate detection end, in other words, a voltage value between the first transistor group 211 and the second transistor group 213 needs to be acquired. In one example, the first transistor group 211 and the second transistor group 213 are formed by a plurality of transistors connected in parallel. In this case, the voltage input terminal of the transistor array 21 may be the input terminal of the first transistor group 211, and the voltage output terminal of the transistor array 21 may be the output terminal of the second transistor group 213.
The switch circuit 15 includes a first switch circuit 151 and a second switch circuit 153, and specifically, the control terminal of the driving chip 11 is connected to the controlled terminal of the first transistor group 211 through the first switch circuit 151; the control terminal of the driving chip 11 is connected to the controlled terminal of the second transistor group 213 through the second switching circuit 153. The voltage detection circuit 13 is further connected to an intermediate detection terminal, and collects a voltage value of the intermediate detection terminal in an on state of the transistors in the transistor array 21, and collects a voltage value of the intermediate detection terminal in an off state of the transistors in the transistor array 21.
In this case, the failure diagnosis is performed by:
1. the first switch circuit 151 and the second switch circuit 153 are turned off, the driving chip 11 drives the first transistor group 211 and the second transistor group 213 to be turned off, and the voltage detection circuit respectively collects a voltage value of the voltage input terminal, a voltage value of the voltage output terminal, and a voltage value of the intermediate detection terminal. If the voltage value at the voltage input terminal is equal to the voltage value at the intermediate detection terminal, it indicates that the first transistor group 211 has a short-circuit fault. If the voltage value of the acquisition voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the intermediate detection terminal are equal, it is indicated that the first transistor group 211 and the second transistor group have a short-circuit fault. If the voltage value at the voltage output terminal and the voltage value at the intermediate detection terminal are equal to zero, it is indicated that the first transistor group 211 and the second transistor group have no faults.
2. The first switch circuit 151 and the second switch circuit 153 are closed, the driving chip 11 drives the first transistor group 211 and the second transistor group 213 to be turned on, and the voltage detection circuit respectively collects the voltage value of the voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the middle detection terminal. If the voltage value of the intermediate detection terminal is equal to zero, it indicates that the first transistor group 211 has an open circuit fault. If the voltage value of the intermediate detection terminal is equal to the voltage value of the voltage input terminal, and the voltage value of the voltage output terminal + the voltage drop of the transistor is less than or equal to the voltage value of the intermediate detection terminal, it indicates that the first transistor group 211 has no fault, and the second transistor group 213 has an open circuit or abnormal driving fault. If the voltage value of the acquisition voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the intermediate detection terminal are equal, it is indicated that the first transistor group 211 and the second transistor group have no faults.
3. The first switch circuit 151 is closed, the driving chip 11 drives the first transistor group 211 to be turned on, the second switch circuit 153 is turned off, the driving chip 11 drives the second transistor group 213 to be turned off, and the voltage detection circuit respectively collects the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end. And if the voltage value of the acquisition voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end are equal, indicating that the second transistor has a short circuit fault. If the voltage value of the voltage input end is equal to the voltage value of the middle detection end, the voltage value of the middle detection end is equal to the voltage value of the voltage output end plus the voltage drop of the transistor, the second transistor is free from faults.
4. The first switch circuit 151 is opened, the driving chip 11 drives the first transistor group 211 to be turned off, the second switch circuit 153 is turned on, the driving chip 11 drives the second transistor group 213 to be turned on, and the voltage detection circuit respectively collects the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end. And if the voltage value of the acquisition voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end are equal, the first transistor is indicated to have a short circuit fault. If the voltage value of the voltage input terminal + the voltage drop of the transistor is equal to the voltage value of the middle detection terminal, the voltage value of the middle detection terminal is equal to the voltage value of the voltage output terminal, the first transistor is indicated to have no fault.
Second, as shown in fig. 6, the transistor array 21 includes a first transistor group 211, a second transistor group 213, a third transistor group 215, and a fourth transistor group 217. The first transistor group 211 is connected to the second transistor group 213, and a connection point of the first transistor group 211 and the second transistor group 213 is a first intermediate detection end. The third transistor group 215 is connected to the fourth transistor group 217, and the connection point of the third transistor group 215 and the fourth transistor group 217 is the second intermediate detection terminal. In other words, it is necessary to acquire the voltage value between the first transistor group 211 and the second transistor group 213, and the voltage value between the third transistor group 215 and the fourth transistor group 217. In one example, the first transistor group 211, the second transistor group 213, the third transistor group 215, and the fourth transistor group 217 are formed by a plurality of transistors connected in parallel. In this case, the voltage input terminal of the transistor array 21 may be the input terminal of the first transistor group 211, and the voltage output terminal of the transistor array 21 may be the output terminal of the second transistor group 213.
The switching circuit 15 includes a first switching circuit 151, a second switching circuit 153, a third switching circuit 15, and a fourth switching circuit 15; the driving chip 11 includes a first driving chip 111 and a second driving chip 113. Specifically, the control terminal of the first driving chip 111 is connected to the controlled terminal of the first transistor group 211 through the first switch circuit 151; the control terminal of the first driving chip 111 is connected to the controlled terminal of the second transistor group 213 through the second switching circuit 153. The control end of the second driving chip 113 is connected to the controlled end of the third transistor group 215 through the third switch circuit 15; the control terminal of the second driving chip 113 is connected to the controlled terminal of the fourth transistor group 217 through the fourth switching circuit 15. The voltage detection circuit 13 is further connected to the first intermediate detection end and the second intermediate detection end, and collects a voltage value of the first intermediate detection end in a state that the transistors in the transistor array 21 are turned on, collects a voltage value of the first intermediate detection end in a state that the transistors in the transistor array 21 are turned off, collects a voltage value of the second intermediate detection end in a state that the transistors in the transistor array 21 are turned on, and collects a voltage value of the second intermediate detection end in a state that the transistors in the transistor array 21 are turned off.
In this case, the failure diagnosis is performed by:
1. the first switch circuit 151 and the second switch circuit 153 are turned off, the first driving chip 111 drives the first transistor group 211 and the second transistor to turn off, the third switch circuit 15 and the fourth switch circuit 15 are turned off, the second driving chip 113 drives the third transistor group and the fourth transistor group 217 to turn off, and the voltage detection circuit respectively collects a voltage value of the voltage input terminal, a voltage value of the voltage output terminal, a voltage value of the first intermediate detection terminal and a voltage value of the second intermediate detection terminal. If the voltage value of the voltage input terminal, the voltage value of the voltage output terminal and the voltage value of the first intermediate detection terminal are at high level, the voltage value of the second intermediate detection terminal is at low level, which indicates that the first transistor group 211 has a short circuit fault. If the voltage value of the input terminal, the voltage value of the voltage output terminal, and the voltage value of the second intermediate detection terminal are high, the voltage value of the first intermediate detection terminal is low, which indicates that the third transistor group 215 has a short-circuit fault.
2. The first switch circuit 151 is closed, the first driving chip 111 drives the first transistor group 211 to be turned on, the second switch circuit 153 is turned off, the first driving chip 111 drives the second transistor group 213 to be turned off, the third switch circuit 15 and the fourth switch circuit 15 are turned off, the second driving chip 113 drives the third transistor and the fourth transistor group 217 to be turned off, and the voltage detection circuit respectively collects a voltage value of the voltage input end, a voltage value of the voltage output end, a voltage value of the first intermediate detection end and a voltage value of the second intermediate detection end. If the voltage value of the voltage input terminal is at a high level, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are at a low level, it is indicated that the first transistor group 211 has an open circuit fault. If the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are high levels, it is indicated that the fourth transistor group 217 has a short-circuit fault. If the voltage value of the voltage input terminal and the voltage value of the first intermediate detection terminal are at high level and the voltage value of the voltage output terminal and the voltage value of the second intermediate detection terminal are at low level, it is indicated that the second transistor group 213 has an open circuit fault.
3. The first switch circuit 151 and the second switch circuit 153 are opened, the first driving chip 111 drives the first transistor group 211 and the second transistor to be turned off, the third switch circuit 15 is closed, the second driving chip 113 drives the third transistor group 215 to be turned on, the fourth switch circuit 15 is opened, the second driving chip 113 drives the fourth transistor group 217 to be turned off, and the voltage detection circuit respectively collects a voltage value of the voltage input end, a voltage value of the voltage output end, a voltage value of the first intermediate detection end and a voltage value of the second intermediate detection end. If the voltage value of the voltage input terminal, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are high levels, it is indicated that the second transistor group 213 has a short-circuit fault. If the voltage value of the voltage input terminal is at a high level, the voltage value of the voltage output terminal, the voltage value of the first intermediate detection terminal, and the voltage value of the second intermediate detection terminal are at a low level, it is indicated that the third transistor group 215 has an open circuit fault. If the voltage value of the input terminal and the voltage value of the second intermediate detection terminal are at high level, the voltage value of the voltage output terminal and the voltage value of the first intermediate detection terminal are at low level, which indicates that the fourth transistor group 217 has an open circuit fault.
The diagnostic device of the battery system provided in each embodiment of the present application includes a driving chip 11 and a voltage detection circuit 13. The control terminal of the driving chip 11 is connected to the controlled terminal of the transistor array 21 of the battery system, and the transistors in the transistor array 21 are turned on and off. The voltage detection circuit 13 is connected to the voltage input terminal and the voltage output terminal of the transistor array 21, respectively, and the voltage detection circuit 13 collects the voltage values of the voltage input terminal and the voltage output terminal of the transistors in the transistor array 21 in the on state, respectively, and collects the voltage values of the voltage input terminal and the voltage output terminal of the transistors in the transistor array 21 in the off state, respectively. The condition of the transistor array 21 is judged through the collected voltage value, the comprehensive fault diagnosis of the transistor array 21 is realized, the diagnosis device is simple in principle and structure, the implementation is convenient, and the fault diagnosis cost of the transistor array 21 is reduced.
The method and the device can carry out full-coverage diagnosis on the open-circuit faults and the short-circuit faults of the transistor array 21, and are simple in diagnosis mechanism and simple in diagnosis circuit. Only the driver chip 11, the switching circuit 15 and the voltage detection circuit 13 are needed. The voltage detection circuit 13 is simple, only needs to judge the high and low levels, and does not need high-precision voltage acquisition and comparison. The diagnosis time is fast, the diagnosis condition is not limited, and the power-on self-checking process can be completed. The two-way redundancy design can solve the unexpected shutdown fault of the whole system.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few embodiments of the present application, which are described in more detail and are not thereby to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A diagnostic device of a battery system is characterized by comprising a driving chip and a voltage detection circuit;
the control end of the driving chip is connected with the controlled end of the transistor array of the battery system and is used for driving the on or off of the transistors in the transistor array;
the voltage detection circuit is respectively connected with the voltage input end and the voltage output end of the transistor array, and is used for respectively acquiring the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in a conducting state and respectively acquiring the voltage values of the voltage input end and the voltage output end of the transistors in the transistor array in an off state.
2. The diagnostic device of the battery system according to claim 1, wherein the transistor array includes a first transistor group and a second transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is an intermediate detection end;
the control end of the driving chip is respectively connected with the controlled end of the first transistor group and the controlled end of the second transistor group;
the voltage detection circuit is also connected with the middle detection end and is used for collecting the voltage value of the middle detection end in the on state of the transistors in the transistor array and collecting the voltage value of the middle detection end in the off state of the transistors in the transistor array.
3. The diagnostic device of a battery system according to claim 2, wherein,
the driving chip is used for driving the first transistor group and the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The driving chip is used for driving the first transistor group and the second transistor group to be conducted, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The driving chip is used for driving the first transistor group to be conducted and the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The driving chip is used for driving the first transistor group to be turned off and the second transistor group to be turned on, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end.
4. The diagnostic device of the battery system according to claim 1, wherein the transistor array includes a first transistor group, a second transistor group, a third transistor group, and a fourth transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is a first middle detection end; the third transistor group is connected with the fourth transistor group, and the connection point of the third transistor group and the fourth transistor group is a second middle detection end;
the control end of the driving chip is respectively connected with the controlled end of the first transistor group, the controlled end of the second transistor group, the controlled end of the third transistor group and the controlled end of the fourth transistor group;
The voltage detection circuit is further connected with the first middle detection end and the second middle detection end, and is used for collecting the voltage value of the first middle detection end of the transistors in the transistor array in the on state, collecting the voltage of the first middle detection end of the transistors in the transistor array in the off state, collecting the voltage value of the second middle detection end of the transistors in the transistor array in the on state, and collecting the voltage value of the second middle detection end of the transistors in the transistor array in the off state.
5. The diagnostic device of a battery system according to claim 4, wherein,
the driving chip is used for driving the first transistor group, the second transistor group, the third transistor group and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The driving chip is used for driving the first transistor group to be conducted and driving the second transistor, the third transistor and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The driving chip is used for driving the third transistor group to be conducted and driving the first transistor, the second transistor and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end.
6. The diagnostic device of a battery system according to any one of claims 1 to 5, wherein the diagnostic device of a battery system further comprises a switching circuit;
the control end of the driving chip is connected with the controlled end of the transistor array of the battery system through the switch circuit; the switch circuit is closed so that the driving chip drives the transistors in the transistor array to be conducted; the switching circuit is opened so that the driving chip drives the transistors in the transistor array to be turned off.
7. The diagnostic device of claim 6, wherein the transistor array comprises a first transistor group and a second transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is an intermediate detection end;
The switching circuit comprises a first switching circuit and a second switching circuit;
the control end of the driving chip is connected with the controlled end of the first transistor group through the first switch circuit; the control end of the driving chip is connected with the controlled end of the second transistor group through the second switch circuit;
the voltage detection circuit is also connected with the middle detection end and is used for collecting the voltage value of the middle detection end of the transistor in the transistor array in the on state and collecting the voltage value of the middle detection end of the transistor in the transistor array in the off state.
8. The diagnostic device of a battery system according to claim 7, wherein,
the first switch circuit and the second switch circuit are disconnected, the driving chip is used for driving the first transistor group and the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The first switch circuit and the second switch circuit are closed, the driving chip is used for driving the first transistor group and the second transistor group to be conducted, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The first switch circuit is closed, the driving chip is used for driving the first transistor group to be conducted, the second switch circuit is opened, the driving chip is used for driving the second transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end; or (b)
The first switch circuit is opened, the driving chip is used for driving the first transistor group to be turned off, the second switch circuit is turned on, the driving chip is used for driving the second transistor group to be turned on, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end and the voltage value of the middle detection end.
9. The diagnostic device of the battery system according to claim 6, wherein the transistor array includes a first transistor group, a second transistor group, a third transistor group, and a fourth transistor group; the first transistor group is connected with the second transistor group, and the connection point of the first transistor group and the second transistor group is a first middle detection end; the third transistor group is connected with the fourth transistor group, and the connection point of the third transistor group and the fourth transistor group is a second middle detection end;
The switching circuit comprises a first switching circuit, a second switching circuit, a third switching circuit and a fourth switching circuit; the driving chip comprises a first driving chip and a second driving chip;
the control end of the first driving chip is connected with the controlled end of the first transistor group through the first switch circuit; the control end of the first driving chip is connected with the controlled end of the second transistor group through the second switch circuit;
the control end of the second driving chip is connected with the controlled end of the third transistor group through the third switch circuit; the control end of the second driving chip is connected with the controlled end of the fourth transistor group through the fourth circuit;
the voltage detection circuit is further connected with the first intermediate detection end and the second intermediate detection end, and is used for collecting the voltage value of the first intermediate detection end in the on state of the transistors in the transistor array, collecting the voltage value of the first intermediate detection end in the off state of the transistors in the transistor array, collecting the voltage value of the second intermediate detection end in the on state of the transistors in the transistor array, and collecting the voltage value of the second intermediate detection end in the off state of the transistors in the transistor array.
10. The diagnostic device of a battery system according to claim 9, wherein,
the first switch circuit and the second switch circuit are disconnected, the first driving chip is used for driving the first transistor group and the second transistor to be disconnected, the third switch circuit and the fourth switch circuit are disconnected, the second driving chip is used for driving the third transistor group and the fourth transistor group to be disconnected, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The first switch circuit is closed, the first driving chip is used for driving the first transistor group to be conducted, the second switch circuit is opened, the first driving chip is used for driving the second transistor group to be turned off, the third switch circuit and the fourth switch circuit are opened, the second driving chip is used for driving the third transistor and the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end; or (b)
The first switch circuit and the second switch circuit are opened, the first driving chip is used for driving the first transistor group and the second transistor to be turned off, the third switch circuit is turned on, the second driving chip is used for driving the third transistor group to be turned on, the fourth switch circuit is turned off, the second driving chip is used for driving the fourth transistor group to be turned off, and the voltage detection circuit is used for respectively collecting the voltage value of the voltage input end, the voltage value of the voltage output end, the voltage value of the first middle detection end and the voltage value of the second middle detection end.
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| CN202223241705.1U CN219224992U (en) | 2022-11-29 | 2022-11-29 | Diagnostic device for battery system |
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| CN202223241705.1U CN219224992U (en) | 2022-11-29 | 2022-11-29 | Diagnostic device for battery system |
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