CN219195210U - Semiconductor process equipment and air inlet system thereof - Google Patents
Semiconductor process equipment and air inlet system thereof Download PDFInfo
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- CN219195210U CN219195210U CN202223483490.4U CN202223483490U CN219195210U CN 219195210 U CN219195210 U CN 219195210U CN 202223483490 U CN202223483490 U CN 202223483490U CN 219195210 U CN219195210 U CN 219195210U
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Abstract
The application discloses semiconductor process equipment and an air inlet system thereof, which belong to the technical field of semiconductor processes, wherein the air inlet system comprises a flow mixer and a process gas pipeline; the mixer is provided with a gas outlet and at least two gas inlets, and each gas inlet is connected with an air inlet pipeline with a first gas flow controller; the gas outlet is simultaneously communicated with the first end of the process gas pipeline through a pressure control gas branch and a flow control gas branch; the second end of the process gas line is in communication with the process chamber. According to the technical scheme, the fully mixed flow treatment can be carried out before the carrying gas and the doping reaction gas enter the process gas pipeline, so that the concentration stability of the doping reaction gas in the mixed gas is ensured before the doping reaction gas participates in the process reaction, and the process effect of the process chamber is further improved.
Description
Technical Field
The application belongs to the technical field of semiconductor processes, and particularly relates to semiconductor process equipment and an air inlet system thereof.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD) refers to a process in which chemical gases or vapors react on the surface of a substrate to synthesize a coating or nanomaterial, a technique most widely used in the semiconductor industry to deposit a variety of materials. Compared with silicon (Si) epitaxy, silicon carbide (SiC) has higher epitaxy temperature and longer growth period, and the epitaxial growth time of a single wafer is longer than 90 minutes. The concentration and flow control of the dopant gas is important throughout the epitaxial growth process. Silicon carbide epitaxy equipment has different doping concentrations between heats due to chamber memory effect, and has different doping concentration influence amplitudes on the center and the edge of the substrate due to the fact that the chamber is a horizontal chamber. Thus, during the process, there are generally the following requirements: 1. the concentration of the doping gas is stable, and the smaller the fluctuation is, the better; 2. the total flow of the doping gas and the carrying gas after being mixed is stable; 3. the dopant gas and carrier gas are mixed uniformly before entering the process chamber to participate in the chemical reaction. Only if the above requirements are met, the wafer finished with the corresponding semiconductor process can meet the requirements on the uniformity of the film thickness and the resistivity of the product.
However, the air inlet scheme adopted by the existing process chamber does not undergo any mixed flow treatment before the carrying gas and the doping reaction gas enter the process gas pipeline, and simple flow mixing is performed only when the carrying gas and the doping reaction gas flow through the process gas pipeline at the same time, so that the doping gas and the carrying gas cannot be fully mixed in a short time at the initial stage of gas injection or when the pressure and the flow of the doping reaction gas end change, namely the concentration stability of the doping reaction gas in the mixed gas cannot be ensured before the carrying gas enters the process chamber to participate in the process reaction, and the process effect of the process chamber is further affected.
Disclosure of Invention
The embodiment of the application provides semiconductor process equipment and an air inlet system thereof, and aims to solve the problems that the concentration stability of doped reaction gas in mixed gas cannot be ensured and the process effect of a process chamber is affected because the mixed flow treatment is not carried out before the carried gas and the doped reaction gas enter a process gas pipeline.
In a first aspect, embodiments of the present application provide an air inlet system for a semiconductor processing apparatus, the air inlet system comprising a flow mixer and a process gas line;
the mixer is provided with a gas outlet and at least two gas inlets, and each gas inlet is connected with an air inlet pipeline with a first gas flow controller; the gas outlet is simultaneously communicated with the first end of the process gas pipeline through a pressure control gas branch and a flow control gas branch; the second end of the process gas line is in communication with the process chamber.
Optionally, in some embodiments, the flow mixer includes a mixing chamber with a spiral mixing structure built-in and at least two air inlet pipes;
the at least two air inlet pipelines are in one-to-one correspondence with the at least two gas inlets;
the first end of each air inlet pipeline is communicated with the mixed flow chamber, the second end of each air inlet pipeline is led out of a corresponding gas inlet, and the gas entering the mixed flow chamber through each air inlet pipeline is discharged through the gas outlet after passing through the spiral mixed flow structure.
Optionally, in some embodiments, the flow mixer includes two air inlet pipelines, and the extending directions of the first ends of the two air inlet pipelines are perpendicular to each other.
Optionally, in some embodiments, at least two of the intake air lines have different intake air path lengths.
Optionally, in some embodiments, the spiral mixed flow structure includes a plurality of spiral slice groups built in the mixed flow chamber, each spiral slice group includes a first spiral slice and a second spiral slice which are connected into a whole in a staggered manner, and the spiral direction of the first spiral slice is opposite to the spiral direction of the second spiral slice.
Optionally, in some embodiments, a plurality of said flighting sets are disposed within said mixing chamber at equal intervals; or alternatively, the first and second heat exchangers may be,
the spiral slice groups are sequentially connected and arranged in the mixed flow cavity.
Optionally, in some embodiments, the flow mixer includes a gas outlet line; the mixed flow cavity comprises a mixed flow cavity section with the spiral mixed flow structure, a first end of the air outlet pipeline is communicated with the mixed flow cavity section, the inner diameter of the mixed flow cavity section is larger than that of the air outlet pipeline, and a second end of the air outlet pipeline is led out of the air outlet.
Optionally, in some embodiments, the pressure control gas branch comprises a first line with a front end gas pressure controller and a second line with a first switch control valve, a first end of the first line communicating with the gas outlet, a second end of the first line communicating with the process gas line via the second line;
the flow control gas branch comprises a third pipeline with a second gas flow controller and a fourth pipeline with a second switch control valve, a first end of the third pipeline is communicated with the gas outlet, and a second end of the third pipeline is communicated with the process gas pipeline through the fourth pipeline.
Optionally, in some embodiments, the air intake system further comprises a purge gas line;
the pressure control gas branch also comprises a fifth pipeline with a third switch control valve;
the flow control gas branch also comprises a sixth pipeline with a fourth switch control valve;
the second end of the first pipeline is communicated with the first end of the purge gas pipeline through the fifth pipeline, the other end of the third pipeline is communicated with the first end of the purge gas pipeline through the sixth pipeline, and the second end of the purge gas pipeline is communicated with the tail gas processor.
Optionally, in some embodiments, the air intake system further comprises a central gas branch and at least one edge gas branch;
the second end of the process gas pipeline is communicated with the central area of the process chamber through the central gas branch and is communicated with the edge area of the process chamber through the edge gas branch;
the central gas branch comprises a seventh pipeline with a central gas flow controller, a first end of the seventh pipeline is communicated with the process gas pipeline through an eighth pipeline with a central switch control valve, a second end of the seventh pipeline is communicated with a central area of the process chamber, a first gas sensor is arranged in the central area of the process chamber, and the first gas sensor is used for detecting the concentration of preset elements in gas to be detected;
the edge gas branch comprises a ninth pipeline with an edge gas flow controller, a first end of the ninth pipeline is communicated with the process gas pipeline through a tenth pipeline with an edge switch control valve, a second end of the ninth pipeline is communicated with an edge region of the process chamber, a second gas sensor is arranged in the edge region of the process chamber, and the second gas sensor is used for detecting the concentration of preset elements in gas to be detected.
In a second aspect, embodiments of the present application provide a semiconductor processing apparatus comprising a process chamber and an air inlet system as described above in communication with the process chamber.
In this application, an air intake system of a semiconductor process apparatus includes a flow mixer and a process gas line. The mixer is provided with a gas outlet and at least two gas inlets, and each gas inlet is connected with an air inlet pipeline with a first gas flow controller, so that the stable access of the carried gas and the doped reaction gas can be realized respectively. Simultaneously, the gas outlet is simultaneously communicated with the first end of the process gas pipeline through the pressure control gas branch and the flow control gas branch, and the second end of the process gas pipeline is communicated with the process chamber. In this way, the air inlet system can perform full mixed flow treatment before the carrying gas and the doping reaction gas enter the process gas pipeline, and simultaneously ensures that the carrying gas and the doping reaction gas can flow into the process gas pipeline stably after being fully mixed through the common cooperation of the pressure control gas branch and at least one flow control gas branch, thereby ensuring the concentration stability of the doping reaction gas in the mixed gas before participating in the process reaction, and further improving the process effect of the process chamber.
Drawings
The technical solution of the present application and the advantageous effects thereof will be made apparent from the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a prior art semiconductor processing apparatus
Fig. 2 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present application.
Fig. 3 is a schematic view of a structure of a flow mixer of an air intake system of the semiconductor processing apparatus shown in fig. 1.
Fig. 4 is a schematic view of an angular cross-sectional structure of the mixer shown in fig. 3.
Fig. 5 is another angular sectional structural schematic view of the mixer shown in fig. 3.
Fig. 6 is a schematic view of a spiral mixing structure of the mixer shown in fig. 5.
Fig. 7 is another structural schematic diagram of a spiral mixing structure of the mixer shown in fig. 5.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. The various embodiments described below and their technical features can be combined with each other without conflict.
CVD, which refers to the process of synthesizing coatings or nanomaterials by reacting chemical gases or vapors at the surface of a substrate, is the most widely used technique for depositing a variety of materials in the semiconductor industry. Compared with silicon (Si) epitaxy, silicon carbide (SiC) has higher epitaxy temperature and longer growth period, and the epitaxial growth time of a single wafer is longer than 90 minutes. The concentration and flow control of the dopant gas is important throughout the epitaxial growth process. Silicon carbide epitaxy equipment has different doping concentrations between heats due to chamber memory effect, and has different doping concentration influence amplitudes on the center and the edge of the substrate due to the fact that the chamber is a horizontal chamber. Thus, during the process, there are generally the following requirements: 1. the concentration of the doping gas is stable, and the smaller the fluctuation is, the better; 2. the total flow of the doping gas and the carrying gas after being mixed is stable; 3. the dopant gas and carrier gas are mixed uniformly before entering the process chamber to participate in the chemical reaction. Only if the above requirements are met, the wafer finished with the corresponding semiconductor process can meet the requirements on the uniformity of the film thickness and the resistivity of the product.
However, prior art process chambers employ an inlet gas scheme generally as shown in FIG. 1, which carries a gas (e.g., H 2 ) After passing through the hand valve 11, the air-operated valve 12, and the filter 13 in this order, the front pressure of the gas flow controller MFC09 is controlled by the pressure regulating valve 14 so that a stable flow of the carrier gas enters the process gas line 15. Similarly, doping the reactant gases (e.g. N 2 And C 3 H 9 A l ) After passing through the hand valve 16, the air-operated valve 17, and the filter 18 in this order, the front pressure of the gas flow controller MFC18 is controlled by the pressure regulating valve 19 so that a stable flow of carrier gas enters the process gas line 15. Finally, these gases are introduced into the central and edge regions of the process chamber 20 by process gas lines 15, respectively. Therefore, in the existing gas inlet scheme, the carrying gas and the doping reaction gas are not subjected to any mixed flow treatment before entering the process gas pipeline 15, and conventional flow mixing is performed only when the carrying gas and the doping reaction gas flow through the process gas pipeline 15 at the same time, so that the doping gas and the carrying gas can not be fully mixed in a short time at the initial stage of gas injection or when the pressure and the flow rate of the doping reaction gas end change, that is, the concentration stability of the doping reaction gas in the mixed gas can not be ensured before entering the process chamber to participate in the process reaction, and the process effect of the process chamber is further affected.
Based on this, it is necessary to provide a new solution for the gas inlet system to improve the gas inlet scheme of the existing process chamber, and the concentration stability of the doped reaction gas in the mixed gas cannot be ensured without any mixed flow treatment before the carrier gas and the doped reaction gas enter the process gas pipeline, thereby affecting the process effect of the process chamber.
As shown in fig. 2-7, in one embodiment, a semiconductor process apparatus 1 is provided, the semiconductor process apparatus 1 comprising a process chamber 100 and an air intake system 200, wherein the air intake system 200 may specifically comprise a flow mixer 210, a process gas line 220, a central gas leg 230, and at least one edge gas leg 240. The mixer 210 is provided with a gas outlet 211 and at least two gas inlets 212, each gas inlet 212 being connected to an inlet line 250 with a first gas flow controller 251. The gas outlet 211 communicates simultaneously with a first end of the process gas line 220 through a pressure control gas branch 260 and a flow control gas branch 270; the second end of the process gas line 220 communicates with the central region of the process chamber 100 through a central gas branch 230 and with the edge region of the process chamber 100 through an edge gas branch 240.
It is appreciated that the gas inlet system 200 of the present embodiments is particularly useful for the inlet operation of dopant reactant gases when the process chamber 100 is performing a CVD process. Thus, one gas inlet 212 of the at least two gas inlets 212 on its mixer 210 can be used to stably access a carrier gas (such as hydrogen H) through the inlet line 250 with a first gas flow controller 251 (which may be the gas flow controller MFC1 in fig. 2) 2 ) Another gas inlet 212 may be used to flow stably into a dopant reactant gas (e.g., nitrogen N) through the gas inlet line 250 of another strip first gas flow controller 251 (which may be the gas flow controller MFC2 of fig. 2) 2 And C 3 H 9 A l ). The flow mixer 210 can fully mix the carrier gas and the doping reaction gas flowing in at the same time through a conventional gas mixing structure, prevent the carrier gas from entering the process chamber 100 in a laminar flow, and help to improve the uniformity of the thickness and resistivity of the wafer after the corresponding process is performed in the process chamber 100. Meanwhile, the pressure control gas branch 260 may use a conventional gas pressure controller to ensure gasThe gas pressure at the gas outlet 211 stabilizes and the flow control gas bypass 270 may employ a conventional gas flow controller to ensure the flow of the mixed gas exiting the gas outlet 211 into the process gas line 220.
In addition, the gas corresponding to the gas inlet system 200 is typically divided into multiple passes into the horizontally disposed process chamber 100 from top to bottom, and thus, the edge region of the process chamber 100 may typically include an upper edge region and a lower edge region, at which time the gas inlet system 200 in this embodiment may specifically include two edge gas branches 240 such that the second end of the process gas line 220 may communicate with the upper edge region of the process chamber 100 through one edge gas branch 240 and with the lower edge region of the process chamber 100 through the other edge gas branch 240.
In this way, the gas inlet system 200 of the embodiment of the present application can perform a sufficient mixed flow treatment before the carrier gas and the doping reaction gas enter the process gas pipeline 220, and simultaneously, through the co-cooperation of the pressure control gas branch 260 and the at least one flow control gas branch 270, the carrier gas and the doping reaction gas can flow into the process gas pipeline 220 in a stable flow manner after being fully mixed, so as to ensure the concentration stability of the doping reaction gas in the mixed gas before the doping reaction gas participates in the process reaction, and further improve the process effect of the process chamber 100.
In some examples, as shown in fig. 3-5, the mixer 210 may specifically include a mixing chamber 213 with a spiral mixing structure 214 built-in and at least two intake lines. At least two inlet lines are in one-to-one correspondence with at least two gas inlets 212. The first end of each air inlet pipeline is communicated with the mixed flow chamber 213, the second end of each air inlet pipeline is led out of a corresponding gas inlet 212, and the gas entering the mixed flow chamber 213 from each air inlet pipeline is discharged from the gas outlet 211 after passing through the spiral mixed flow structure 241. In this way, at least two gas inlets 212 are respectively led out through the second ends of at least two gas inlet pipes to respectively connect the doped reaction gas and the carrier gas, and the doped reaction gas and the carrier gas are fully mixed by the spiral mixed flow structure 214 in the mixed flow chamber 213 and then flow out of the gas outlets 211.
Since only the mixed gas formed by the doped reaction gas and the carrier gas needs to flow into the general process chamber 100, the at least two gas inlet pipelines may specifically include a first gas inlet pipeline 215 and a second gas inlet pipeline 216, where a first end of the first gas inlet pipeline 215 is communicated with the mixed flow chamber 213, and a second end of the first gas inlet pipeline 215 leads out a corresponding gas inlet 212. The first end of the second air inlet pipeline 216 is communicated with the mixed flow chamber 213, and the second end of the second air inlet pipeline 216 is led out of the other corresponding gas inlet 212. In this way, the doped reactant gas may be introduced through the gas inlet 212 of the first gas inlet line 215 and the carrier gas may be introduced through the gas inlet 212 of the second gas inlet line 216.
In some examples, as shown in fig. 3 and 4, the mixer 210 may specifically include two air inlet pipes (i.e. the first air inlet pipe 215 and the second air inlet pipe 216), and the extending directions of the first ends of the two air inlet pipes are perpendicular to each other, so that the doped reaction gas and the carrier gas can be ensured to enter the mixing chamber 213 perpendicular to each other, so that the initial mixing is performed at the initial stage of entering the mixing chamber 213, and the gas mixing effect of the mixer 210 is further improved. Meanwhile, to further facilitate the mixing of the doped reaction gas and the carrier gas after entering the mixing chamber 213 and after performing a good preliminary mixing, the mixing chamber 213 may specifically include a pre-mixing chamber segment 2131 and a mixing chamber segment 2132 with a spiral mixing structure 214 inside, the pre-mixing chamber segment 2131 may specifically have a cube structure, at this time, a first end of the first air inlet pipe 215 is connected to the mixing chamber 213 at a first side surface of the pre-mixing chamber segment 2131, and a first end of the second air inlet pipe 216 is connected to the mixing chamber 213 at a second side surface of the pre-mixing chamber segment 2131 adjacent to the first side surface, so as to ensure that the extending directions of the first ends of the two air inlet pipes (i.e. the first air inlet pipe 215 and the second air inlet pipe 216) are perpendicular to each other.
In some examples, as shown in fig. 3 and fig. 4, at least two gas inlet pipes have different gas inlet path lengths, so that the doped reaction gas can be introduced through the gas inlet pipe with a short gas inlet path, and the gas inlet pipe with a long gas inlet path is introduced with the carrier gas, so that the path of the doped reaction gas entering the mixed flow chamber 213 is ensured to be shorter than the path of the carrier gas entering the mixed flow chamber 213, and further, the time required for mixing the doped reaction gas with the carrier gas due to lower pressure is reduced. In this example, since the gas inlet 212 led out of the first air inlet pipeline 215 is connected to the doped reaction gas, and the gas inlet 212 led out of the second air inlet pipeline 216 is connected to the carrier gas, the second air inlet pipeline 216 may specifically adopt the L-shaped structure shown in fig. 3, so that the extending directions of the first ends of the two air inlet pipelines (i.e. the first air inlet pipeline 215 and the second air inlet pipeline 216) are perpendicular to each other, and the two gas inlets 212 led out of the second ends of the two air inlet pipelines (i.e. the first air inlet pipeline 215 and the second air inlet pipeline 216) are flush with each other while ensuring that the air inlet path of the second air inlet pipeline 216 is longer than the air inlet path of the first air inlet pipeline 215.
In some examples, as shown in fig. 3-7, the spiral mixing structure 214 includes a plurality of spiral slice groups built into the mixing chamber 213, each spiral slice group includes a first spiral slice 2141 and a second spiral slice 2142 that are connected in a staggered manner into a whole, and the spiral direction of the first spiral slice 2141 is opposite to the spiral direction of the second spiral slice 2142. Further, as shown in fig. 6, a plurality of screw slice groups are installed in the mixing chamber section 2132 of the mixing chamber 213 at equal intervals, or as shown in fig. 7, a plurality of screw slice groups are installed in the mixing chamber section 2132 of the mixing chamber 213 in series. The mixer 210 further includes an outlet pipe 217, a first end of the outlet pipe 217 is connected to the mixing chamber segment 2132, an inner diameter of the mixing chamber segment 2132 is larger than an inner diameter of the outlet pipe 217, and a second end of the outlet pipe 217 leads out the gas outlet 211. Thus, when the reactant gases and the carrier gases enter the mixing chamber 213, the two gases sequentially pass through the first spiral piece 2141 and the second spiral piece 2142 of the plurality of spiral piece groups, and the spiral directions of the first spiral piece 2141 and the second spiral piece 2142 shown in the figure are respectively left spiral and right spiral, when the two gases flow through the spiral mixing structure 214, the two gases are sometimes left-handed and sometimes right-handed, and the flowing gases are continuously changed in direction, so that the central gases are pushed to the peripheral side wall and the side wall gases are also pushed to the center, and the two gases are continuously and intensively mixed and diffused in the mixing chamber 213, and compared with the installation mode of the connecting together shown in fig. 7, the installation mode of grouping shown in fig. 6 can be used for fully mixing the two gases at the gaps between the groups after the two gases pass through the first spiral piece 2141 and the second spiral piece 2142 of one spiral piece group, and then flow into the first spiral piece 2141 and the second spiral piece 2142 of the next group, so that the mixing effect is better. Finally, the two gases flow out rapidly through the reduced-diameter necking (namely the air outlet pipeline 217), so that the effect of fully and efficiently mixing the gases can be further achieved.
In some examples, as shown in fig. 2-7, the pressure control gas branch 260 may specifically include a first line 261 with a front end gas pressure controller EPC1 and a second line 262 with a first on-off control valve V005, a first end of the first line 261 communicating with the gas outlet 211, a second end of the first line 261 communicating with the process gas line 220 via the second line 262. The flow control gas branch 270 comprises a third line 271 with a second gas flow controller MFC3, MFC4, a fourth line 272 with a second on-off control valve V001, V003, a first end of the third line 271 being in communication with the gas outlet 211, a second end of the third line 271 being in communication with the process gas line 220 via the fourth line 272. Further, the number of the flow control gas branches 270 may be specifically set to be two, so that the gas from the gas outlet 211 may be divided into three paths (i.e., one path is the pressure control gas branch 260 and two paths are the flow control gas branch 270) and flow into the process gas pipeline 220, and the first switch control valve V005 and the second switch control valves V001 and V003 are controlled to be opened during the process execution, so that the gas is collected into the process gas pipeline 220.EPC1 serves as a front-end pressure controller, and since pressure control gas branch 260 and two flow control gas branches 270 are connected to each other at point a shown in fig. 2. Thus, controlling the front end pressure of EPC1, the pressure of the two flow control gas branches 270 can be controlled to stabilize, thereby stabilizing the three gas flows entering the process gas line 220.
In some examples, as shown in fig. 2-7, to perform a purge clean of the corresponding lines prior to process execution, the gas inlet system 200 further includes a purge gas line 280, the pressure control gas branch 260 further includes a fifth line 263 with a third switch control valve V006, the flow control gas branch 270 further includes a sixth line 273 with fourth switch control valves V002, V004, a second end of the first line 261 communicates with a first end of the purge gas line 280 via the fifth line 263, a second end of the third line 271 communicates with a first end of the purge gas line 280 via the sixth line 273, and a second end of the purge gas line 280 communicates with the tail gas processor 300. In this way, before the process is performed, the third switch control valve V006 and the fourth switch control valves V002 and V004 are controlled to be opened to clean the corresponding pipelines, and the cleaned gas is collected to the purge gas pipeline 280 and then discharged through the exhaust gas processor 300.
In some examples, as shown in fig. 2-7, the central gas branch 230 may specifically include a seventh conduit with a central gas flow controller MFC6, a first end of the seventh conduit communicating with the process gas conduit 220 via an eighth conduit 291 with a central on-off control valve V008, a second end of the seventh conduit communicating with a central region of the process chamber 100, and a first gas sensor (not shown) disposed within the central region of the process chamber 100. The edge gas branch 240 includes a ninth pipe with edge gas flow controllers MFC5, MFC7, a first end of which communicates with the process gas pipe 220 through a tenth pipe 292 with an edge switch control valve V007, a second end of which communicates with an edge region of the process chamber 100, and a second gas sensor (not shown) is provided in the edge region of the process chamber 100.
It should be noted that, in this example, the first gas sensor and the second gas sensor are both used for detecting the concentration of the preset element in the gas to be detected, where the gas to be detected is the gas in the region where the first gas sensor or the second gas sensor is located in the process chamber 100. The gas sensors (i.e., the first gas sensor and the second gas sensor) are typically electrochemical sensors that operate by reacting with an element in the gas to be detected and generating an electrical signal proportional to the concentration of the gas. Because of the need to enter the dopant reactant gas of the process chamber 100, nitrogen N is typically included 2 Thus, in this example, pre-emphasisThe setting element may be nitrogen, i.e. the gas sensor in this example may specifically be a nitrogen content sensor. In this way, by adding the corresponding nitrogen content sensors to the center region and the edge region of the process chamber 100, it is possible to measure the distribution of the nitrogen content in the center region and the edge region of the process chamber 100 (the distribution of the nitrogen content may be in direct proportion to the concentration of the doping reaction gas) during the process, and the smaller the difference between the nitrogen content in the center region and the nitrogen content in the edge region is C2, the better the film thickness and the uniformity of the resistance of the wafer in the process chamber 100 is. Through the arrangement of the first gas sensor and the second gas sensor (specifically, the two gas sensors may be both nitrogen content sensors), the difference between C1 and C2 can be obtained in real time during the process execution, so as to continuously adjust the gas flows of the edge gas branches 240, that is, the flows of the two edge gas branches 240 are matched with the flows of the central gas branch 230, so as to form closed loop control. The specific requirement is that the formula is satisfied: Δflow=k (C1-C2) gas Flow rate x line cross-sectional area, where Δflow is a compensation value that needs to be added to the edge gas Flow controllers MFC5, MFC7 of the edge gas branch 240, and K is a coefficient (the relationship between the nitrogen content and the Flow control compensation value can be obtained from the process results and data of the previous multiple tests, which is an empirical value). By such control, the ratio of the air inflow of the center area and the edge area of the process chamber 100 is ensured, so that the distribution uniformity of the air entering the process chamber 100 is improved, and the stability of the process chamber 100 in the process is further improved.
In an embodiment, the embodiment of the present application also separately provides an air intake system of the semiconductor process device, and the structure and the function of the air intake system may refer to the air intake system 300 of the above embodiment specifically, which is not described herein again.
Although the application has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. This application is intended to cover all such modifications and variations, and is limited only by the scope of the appended claims. In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the specification.
That is, the foregoing embodiments are merely examples of the present application, and are not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application, such as the combination of technical features of the embodiments, or direct or indirect application to other related technical fields, are included in the scope of the patent protection of the present application.
In addition, in the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. In addition, the present application may use the same or different reference numerals for structural elements having the same or similar characteristics. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In this application, the term "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The previous description is provided to enable any person skilled in the art to make or use the present application. In the above description, various details are set forth for purposes of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes have not been shown in detail to avoid unnecessarily obscuring the description of the present application. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
Claims (11)
1. An air inlet system of semiconductor process equipment, characterized in that the air inlet system comprises a mixer and a process gas pipeline;
the mixer is provided with a gas outlet and at least two gas inlets, and each gas inlet is connected with an air inlet pipeline with a first gas flow controller; the gas outlet is simultaneously communicated with the first end of the process gas pipeline through a pressure control gas branch and a flow control gas branch; the second end of the process gas line is in communication with the process chamber.
2. The air intake system of claim 1, wherein the flow mixer comprises a mixing chamber with a spiral mixing structure built in and at least two air intake pipes;
the at least two air inlet pipelines are in one-to-one correspondence with the at least two gas inlets;
the first end of each air inlet pipeline is communicated with the mixed flow chamber, the second end of each air inlet pipeline is led out of a corresponding gas inlet, and the gas entering the mixed flow chamber through each air inlet pipeline is discharged through the gas outlet after passing through the spiral mixed flow structure.
3. The air intake system of claim 2, wherein the flow mixer comprises two air intake pipes, and the first ends of the two air intake pipes extend in directions perpendicular to each other.
4. An air intake system according to claim 2, wherein at least two of the air intake lines have different air intake path lengths.
5. The air intake system of claim 2, wherein the spiral mixing structure comprises a plurality of spiral slice groups built in the mixing chamber, each spiral slice group comprises a first spiral slice and a second spiral slice which are connected into a whole in a staggered way, and the spiral direction of the first spiral slice is opposite to the spiral direction of the second spiral slice.
6. The air intake system of claim 5, wherein a plurality of said flighting sets are equally spaced within said mixed flow chamber; or alternatively, the first and second heat exchangers may be,
the spiral slice groups are sequentially connected and arranged in the mixed flow cavity.
7. The air intake system of claim 2, wherein the flow mixer further comprises an air outlet line; the mixed flow cavity comprises a mixed flow cavity section with the spiral mixed flow structure, a first end of the air outlet pipeline is communicated with the mixed flow cavity section, the inner diameter of the mixed flow cavity section is larger than that of the air outlet pipeline, and a second end of the air outlet pipeline is led out of the air outlet.
8. The gas inlet system of claim 1, wherein the pressure control gas branch comprises a first conduit with a front end gas pressure controller and a second conduit with a first switch control valve, a first end of the first conduit communicating with the gas outlet, a second end of the first conduit communicating with the process gas conduit via the second conduit;
the flow control gas branch comprises a third pipeline with a second gas flow controller and a fourth pipeline with a second switch control valve, a first end of the third pipeline is communicated with the gas outlet, and a second end of the third pipeline is communicated with the process gas pipeline through the fourth pipeline.
9. The air intake system of claim 8, further comprising a purge gas line;
the pressure control gas branch also comprises a fifth pipeline with a third switch control valve;
the flow control gas branch also comprises a sixth pipeline with a fourth switch control valve;
the second end of the first pipeline is communicated with the first end of the purge gas pipeline through the fifth pipeline, the second end of the third pipeline is communicated with the first end of the purge gas pipeline through the sixth pipeline, and the second end of the purge gas pipeline is communicated with the tail gas processor.
10. The air intake system of any of claims 1-9, further comprising a central gas branch and at least one edge gas branch;
the second end of the process gas pipeline is communicated with the central area of the process chamber through the central gas branch and is communicated with the edge area of the process chamber through the edge gas branch;
the central gas branch comprises a seventh pipeline with a central gas flow controller, a first end of the seventh pipeline is communicated with the process gas pipeline through an eighth pipeline with a central switch control valve, a second end of the seventh pipeline is communicated with a central area of the process chamber, a first gas sensor is arranged in the central area of the process chamber, and the first gas sensor is used for detecting the concentration of preset elements in gas to be detected;
the edge gas branch comprises a ninth pipeline with an edge gas flow controller, a first end of the ninth pipeline is communicated with the process gas pipeline through a tenth pipeline with an edge switch control valve, a second end of the ninth pipeline is communicated with the edge region of the process chamber, and the edge region of the process chamberA second gas sensor is arranged in ， The second gas sensor is used for detecting the concentration of preset elements in the gas to be detected.
11. A semiconductor processing apparatus comprising a process chamber and an air intake system according to any one of claims 1-10 in communication with the process chamber.
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| CN202223483490.4U CN219195210U (en) | 2022-12-26 | 2022-12-26 | Semiconductor process equipment and air inlet system thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223483490.4U CN219195210U (en) | 2022-12-26 | 2022-12-26 | Semiconductor process equipment and air inlet system thereof |
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