CN219194607U - Ionized water generating device with bismuth telluride semiconductor - Google Patents

Abstract

The utility model discloses an ionized water generating device with bismuth telluride semiconductors, which comprises a first PCB, a second PCB, a refrigerating sheet and a transmitting needle, wherein the transmitting needle is electrically connected to the second PCB, the refrigerating sheet is provided with a bismuth telluride P/N type semiconductor, one end of the bismuth telluride P/N type semiconductor is a refrigerating end, the other end of the bismuth telluride P/N type semiconductor is a heating end, one end of the transmitting needle is connected with the refrigerating end of the bismuth telluride P/N type semiconductor, the first PCB is fixedly connected with the second PCB through a supporting column, the first PCB is detachably connected with a high-voltage electrode component, the transmitting needle is provided with a transmitting hole corresponding to the transmitting needle, and the transmitting needle is arranged opposite to the high-voltage electrode component through the transmitting hole and is not contacted with the high-voltage electrode component. The high-voltage power supply device has the advantages of compact integral structure, good refrigeration effect, convenience in dismounting and mounting high-voltage electrode components, stability in mounting, high efficiency in heat dissipation and reduction in replacement cost.

Description

Ionized water generating device with bismuth telluride semiconductor

Technical Field

The utility model relates to the technical field of ionized water generating devices, in particular to an ionized water generating device with bismuth telluride semiconductors.

Background

Because nano water ions have the advantages of biological activity, small particle size, stable performance, weak acidity, sterilization, peculiar smell removal and the like, ionized water generators are popular, and the existing water in the air is converted into nano water ions by utilizing a high-voltage discharge principle.

The prior Chinese patent with the bulletin number of CN213026899U discloses a nano water ion generator, which comprises a discharge electrode assembly and a high-voltage electrode, wherein the discharge electrode assembly and the high-voltage electrode are oppositely arranged, the discharge electrode assembly comprises a charging core body and a discharge shell, the charging core body charges and polarizes the discharge shell, and one end of the discharge shell, which points to the high-voltage electrode, is a discharge end; a high voltage electric field is applied between the high voltage electrode and the discharge electrode assembly to ionize water within the discharge casing or moisture in the air to generate nano-sized water ions.

However, the nano water ion generating device has the following disadvantages: the high-voltage electrode of the nano water ion generator is easy to oxidize and damage after long-time use, if the high-voltage electrode is not replaced, the generation amount of the nano water ions can be influenced, but because the high-voltage electrode of the generator is an integral body, the whole receiving electrode is required to be replaced every time, the operation is troublesome, and meanwhile, the cost is increased.

Disclosure of Invention

The utility model aims to provide an ionized water generating device with a bismuth telluride semiconductor, which has the advantages of compact integral structure, good refrigerating effect and low replacement cost.

The technical aim of the utility model is realized by the following technical scheme: the utility model provides an ionized water generating device with bismuth telluride semiconductor, includes first PCB board, second PCB board, refrigeration piece and transmitting needle, transmitting needle electric connection in the second PCB board, be equipped with bismuth telluride P/N type semiconductor on the refrigeration piece, bismuth telluride P/N type semiconductor one end is the refrigeration end, bismuth telluride P/N type semiconductor other end is the heating end, the one end of transmitting needle is connected bismuth telluride P/N type semiconductor's refrigeration end, pass through support column fixed connection between first PCB board and the second PCB board, first PCB board detachably is connected with high-voltage electrode part, high-voltage electrode part corresponds the transmitting needle has seted up the transmitting hole, the transmitting needle passes through the transmitting hole with high-voltage electrode part sets up relatively and each other does not contact.

By adopting the technical scheme, when the bismuth telluride P/N type semiconductor is assembled, the first PCB and the second PCB are fixedly connected together through the supporting columns, then the high-voltage electrode component is fixedly connected to the first PCB, the emitting holes of the high-voltage electrode component are aligned to the end parts of the emitting pins on the second PCB, then high-voltage electricity is simultaneously conducted to the first PCB and the second PCB, a high-voltage electric field is formed between the high-voltage electrode component and the emitting pins, meanwhile, the refrigerating end of the bismuth telluride P/N type semiconductor generates cold energy, the cold energy is continuously conducted to the emitting pins connected with the refrigerating end of the bismuth telluride P/N type semiconductor, the surface of the emitting pins acquires condensation beads or air with high relative humidity, ambient air and moisture are ionized under the effect of electron avalanche, so that at least one nano-particle-size substance of charged particles and oxygen-containing free radicals is acquired, and nano-water ions are formed, and compared with the common P/N type semiconductor, the refrigerating effect of the bismuth telluride P/N type semiconductor is better, and the generation of nano-water ions is more facilitated; in addition, because the high-voltage electrode part is detachably arranged on the first PCB, after long-time use, when the surface of the high-voltage electrode part is oxidized and needs to be replaced, a user can detach the old high-voltage electrode part and then directly select a new high-voltage electrode part to replace the new high-voltage electrode part, so that the high-voltage electrode part is quite convenient.

The utility model is further provided with: the high-voltage electrode component is provided with a plug-in connection part, the first PCB is provided with a mounting hole, and the plug-in connection part is fixedly plugged in the mounting hole.

Through adopting above-mentioned technical scheme, high voltage electrode part accessible is directly pegged graft the grafting portion and is fixed to the mounting hole of first PCB board in realizing fixedly.

The utility model is further provided with: the high-voltage electrode component is provided with a plurality of metal sheets, and when the high-voltage electrode component is mounted on the mounting hole, the metal sheets are bent to enable the high-voltage electrode component to be fixedly connected to the first PCB.

Through adopting above-mentioned technical scheme, after the grafting portion grafting of high voltage electrode piece is fixed in the mounting hole of first PCB board, the sheetmetal also wears to the opposite side of mounting hole simultaneously, then through outwards buckling the sheetmetal, makes the sheetmetal after buckling and the cooperation of first PCB board backstop, can further improve the installation firmness degree of high voltage electrode piece, when need demolish high voltage electrode part, the sheetmetal part of accessible external force with buckling breaks straight off with fingers and thumb, then can demolish high voltage electrode part from in the mounting hole of first PCB board.

The utility model is further provided with: the high-voltage electrode component is provided with an ion electrode cover, and the outer wall of the ion electrode cover and the bent metal sheet are matched, clamped and fixed on the first PCB.

Through adopting above-mentioned technical scheme, when high-voltage electrode part installs on the mounting hole of first PCB board, the ion electrode cover forms the tight potential of clamp with the sheetmetal both sides of mounting hole of first PCB board with the sheetmetal of buckling, makes high-voltage electrode part fixed connection more firm on first PCB board.

The utility model is further provided with: the transmitting pin is characterized in that one end of the transmitting pin is provided with a heat conducting block, one end of the heat conducting block is propped against the second PCB, and the other end of the heat conducting block is propped against the refrigerating sheet, so that the second PCB and the refrigerating sheet are separated.

By adopting the technical scheme, the heat conduction block enables the lower end of the transmitting needle to be thermally connected to the refrigerating end of the bismuth telluride P/N type semiconductor, and the cold energy generated by the refrigerating end can be transferred to the transmitting needle through the heat conduction block so as to generate condensation beads on the surface of the transmitting needle or obtain air with high relative humidity.

The utility model is further provided with: the second PCB is arranged between the first PCB and the refrigerating sheet, a through hole is formed in the second PCB, and the transmitting needle penetrates through the through hole and is electrically connected with the second PCB.

Through the adoption of the technical scheme, the side wall of the transmitting needle is electrically connected with the second PCB through the through hole, and meanwhile, the lower end of the transmitting needle passes through the through hole and abuts against the refrigerating end of the bismuth telluride P/N type semiconductor, and the connecting structure enables the whole structure of the bismuth telluride P/N type semiconductor to be more compact.

The utility model is further provided with: the second PCB is fixedly connected with a heat dissipation piece, and the heat dissipation piece is in contact connection with the heating end of the bismuth telluride P/N type semiconductor.

By adopting the technical scheme, according to the law of conservation of energy, when the refrigerating end of the bismuth telluride P/N type semiconductor generates cold energy, the heating end of the bismuth telluride P/N type semiconductor inevitably generates heat, and the heat radiating piece can take away a large amount of heat generated by the heating end, so that the environmental temperature of the refrigerating end is kept stable, and water can be hydrolyzed to generate nano water ions.

The utility model is further provided with: the cooling piece is provided with a mounting frame, and the refrigerating piece is embedded in the mounting frame.

Through adopting above-mentioned technical scheme, the refrigerating plate is installed in the installing frame of radiator through the embedding, makes the heating end of bismuth telluride P/N type semiconductor on the refrigerating plate can closely laminate on the radiator, makes this heating end and fin can carry out quick heat transfer, and then makes the fin carry out high-efficient heat dissipation to the heating end.

The utility model is further provided with: the heat dissipation piece is provided with a plurality of heat dissipation fins which are distributed on the heat dissipation piece at equal intervals.

Through adopting above-mentioned technical scheme, a plurality of fin can increase the area of contact of fin and external world, improves radiating efficiency.

The utility model is further provided with: the heat dissipation piece both sides are equipped with the reference column, the screw hole has been seted up to the reference column, the second PCB board corresponds the reference column is equipped with the hangers, pass through the screw the hangers with screw hole threaded connection.

By adopting the technical scheme, the radiating piece is detachably connected to the second PCB through the screws, so that the connection stability among all the components of the utility model is improved, and the connection of the utility model is firmer.

In summary, the utility model has the following beneficial effects: the bismuth telluride P/N type semiconductor is arranged on the refrigerating sheet for refrigerating, and meanwhile, the high-voltage electrode component is detachably mounted on the first PCB, so that the high-voltage LED refrigerating device has the advantages of compact overall structure, good refrigerating effect, convenience in dismounting and mounting the high-voltage electrode component, stability in mounting, high efficiency in heat dissipation and replacement cost reduction.

Drawings

Fig. 1 is a structural diagram of the present utility model.

Fig. 2 is a longitudinal cross-sectional view of the present utility model.

Fig. 3 is an exploded view of the present utility model.

Fig. 4 is a diagram showing a state of separation of the metal sheet and the first PCB board according to the present utility model, the metal sheet is not bent.

In the figure: 1. a first PCB board; 11. a mounting hole; 2. a second PCB board; 21. a through hole; 22. hanging lugs; 3. a cooling sheet; 31. bismuth telluride P/N type semiconductor; 31a, a refrigerating end; 31b, heating end; 4. a firing pin; 41. a heat conduction block; 5. a support column; 6. a high voltage electrode part; 61. an ion electrode cover; 62. a plug-in part; 63. a metal sheet; 64. a transmitting hole; 7. a heat sink; 71. a mounting frame; 72. a heat sink; 73. positioning columns; 74. and (3) a threaded hole.

Detailed Description

The utility model is further described below with reference to the accompanying drawings.

The utility model discloses an ionized water generating device with bismuth telluride semiconductors, which is shown in fig. 1-2 and comprises a first PCB (printed circuit board) 1, a second PCB (printed circuit board) 2, a refrigerating sheet 3 and a transmitting needle 4, wherein the second PCB 2 is arranged between the first PCB 1 and the refrigerating sheet 3, a through hole 21 is formed in the second PCB 2, the transmitting needle 4 penetrates through the through hole 21 and is electrically connected with the second PCB 2, a bismuth telluride P/N type semiconductor 31 is arranged on the refrigerating sheet 3, one end of the bismuth telluride P/N type semiconductor 31 is a refrigerating end 31a, the other end of the bismuth telluride P/N type semiconductor 31 is a heating end 31b, one end of the transmitting needle 4 is connected with the refrigerating end 31a of the bismuth telluride P/N type semiconductor 31, the first PCB 1 and the second PCB 2 are fixedly connected through a supporting column 5, the side wall of the transmitting needle 4 is electrically connected with the second PCB 2 through the through hole 21, and simultaneously the lower end of the transmitting needle 4 is abutted against the refrigerating end 31a bismuth telluride P/N type semiconductor 31 through the through hole 21.

As shown in fig. 1-2 and fig. 4, the high-voltage electrode component 6 is provided with a plug-in part 62, the first PCB board 1 is provided with a mounting hole 11, the plug-in part 62 is fixedly plugged into the mounting hole 11, and the high-voltage electrode component 6 can be fixed by directly plugging and fixing the plug-in part 62 into the mounting hole 11 of the first PCB board 1; the four metal sheets 63 are arranged on the plug-in part 62 of the high-voltage electrode part 6 in an extending manner, the four metal sheets 63 are arranged at equal intervals along the circumferential direction of the plug-in part 62, when the plug-in part 62 of the high-voltage electrode part is plugged and fixed in the mounting hole 11 of the first PCB 1, the metal sheets 63 penetrate through the other side of the mounting hole 11 at the same time, then the bent metal sheets 63 are matched with the first PCB 1 in a stop manner by bending the metal sheets 63 outwards, so that the mounting firmness of the high-voltage electrode part can be further improved, when the high-voltage electrode part 6 needs to be removed, the bent metal sheets 63 can be partially broken straight by external force, and then the high-voltage electrode part 6 can be removed from the mounting hole 11 of the first PCB 1; the high-voltage electrode part 6 is provided with the ion electrode cover 61, the outer wall of the ion electrode cover 61 and the bent metal sheet 63 are matched and clamped and fixed on the first PCB 1, and when the high-voltage electrode part 6 is installed on the installation hole 11 of the first PCB 1, the ion electrode cover 61 and the bent metal sheet 63 form clamping potentials at two sides of the installation hole 11 of the first PCB 1, so that the high-voltage electrode part 6 is fixedly connected on the first PCB 1 more firmly.

As shown in fig. 2-3, one end of the transmitting needle 4 is provided with a heat conducting block 41, one end of the heat conducting block 41 is propped against the second PCB board 2, the other end of the heat conducting block 41 is propped against the refrigerating sheet 3, so that the second PCB board 2 and the refrigerating sheet 3 are arranged separately, the heat conducting block 41 enables the lower end of the transmitting needle 4 to be connected with the refrigerating end 31a of the bismuth telluride P/N type semiconductor 31 in a thermocouple mode, and cold energy generated by the refrigerating end 31a can be transmitted to the transmitting needle 4 through the heat conducting block 41 so as to generate condensation beads on the surface of the transmitting needle 4 or obtain air with high relative humidity.

As shown in fig. 1-3, the second PCB 2 is fixedly connected with a heat dissipation member 7, the heat dissipation member 7 is in contact connection with the heating end 31b of the bismuth telluride P/N type semiconductor 31, according to the law of conservation of energy, when the cooling end 31a of the bismuth telluride P/N type semiconductor 31 generates cold energy, the heating end 31b thereof inevitably generates heat, and the heat dissipation member 7 can take away a large amount of heat generated by the heating end 31b, so that the environmental temperature of the heating end 31a is kept stable, and water can be generated by water to generate nano water ions; the radiating piece 7 is provided with a plurality of radiating fins 72, the radiating fins 72 are distributed on the radiating piece 7 at equal intervals, and the radiating fins 72 can enlarge the contact area between the radiating fins 72 and the outside, so that the radiating efficiency is improved.

The heat sink 7 is provided with a mounting frame 71, the cooling fin 3 is embedded in the mounting frame 71, and the cooling fin 3 is embedded in the mounting frame 71 of the heat sink 7, so that the heating end 31b of the bismuth telluride P/N type semiconductor 31 on the cooling fin 3 can be tightly attached to the heat sink 7, the heating end 31b and the heat sink 72 can conduct rapid heat transfer, and the heat sink 72 can conduct efficient heat dissipation to the heating end 31 b.

The two sides of the heat dissipation piece 7 are respectively provided with a positioning column 73, the positioning columns 73 are provided with threaded holes 74, the second PCB 2 is provided with hanging lugs 22 corresponding to the positioning columns 73, the heat dissipation piece 7 is detachably connected to the second PCB 2 through screws in threaded connection with the threaded holes 74 by penetrating through the hanging lugs 22, and the connection stability among all parts of the utility model is improved, so that the connection of the utility model is firmer.

The basic working principle of the utility model is as follows: during assembly, the first PCB 1 and the second PCB 2 are fixedly connected together through the support column 5, then the high-voltage electrode component 6 is fixedly connected to the first PCB 1, the emitting holes 64 of the high-voltage electrode component 6 are aligned with the end parts of the emitting pins 4 on the second PCB 2, then high-voltage electricity is simultaneously conducted on the first PCB 1 and the second PCB 2, a high-voltage electric field is formed between the high-voltage electrode component 6 and the emitting pins 4, meanwhile, the refrigerating end 31a of the bismuth telluride P/N type semiconductor 31 generates cold energy, the cold energy is continuously conducted to the emitting pins 4 connected with the refrigerating end 31a of the bismuth telluride P/N type semiconductor 31, so that the surface of the emitting pins 4 obtains condensation beads or air with high relative humidity, ambient air and moisture are ionized under the effect of electron avalanche effect to obtain at least one nano-particle-size substance in charged particles and oxygen-containing free radicals, and then nano water ions are formed, and the bismuth telluride P/N type semiconductor 31 generates nano water ions better than the common material P/N type semiconductor 31; in addition, since the high-voltage electrode part 6 is detachably arranged on the first PCB 1, after long-time use, when the surface of the high-voltage electrode part 6 is oxidized and needs to be replaced, a user can detach the old high-voltage electrode part 6 and then directly select a new high-voltage electrode part 6 to replace the old high-voltage electrode part 6, so that the high-voltage electrode part is quite convenient, in addition, the cost is reduced because the material cost of a single high-voltage electrode part 6 is low, the high-voltage electrode part is beneficial to environmental protection when the convenience is improved compared with the traditional replacement of the whole first PCB 1, and the high-voltage electrode part has the effects of compact integral structure, good refrigerating effect and replacement cost reduction.

The foregoing description is only of the preferred embodiments of the utility model, and all changes and modifications that come within the meaning and range of equivalency of the structures, features and principles of the utility model are therefore intended to be embraced therein.

Claims (10)

1. The utility model provides an ionized water generating device with bismuth telluride semiconductor, includes first PCB board (1), second PCB board (2), refrigeration piece (3) and transmitting needle (4), its characterized in that: the utility model provides a high-voltage electrode part (6) is connected to the transmission needle, transmission needle (4) electric connection in second PCB board (2), be equipped with bismuth telluride P/N type semiconductor (31) on refrigeration piece (3), bismuth telluride P/N type semiconductor (31) one end is refrigeration end (31 a), bismuth telluride P/N type semiconductor (31) other end is heating end (31 b), the one end of transmission needle (4) is connected refrigeration end (31 a) of bismuth telluride P/N type semiconductor (31), pass through support column (5) fixed connection between first PCB board (1) and second PCB board (2), first PCB board (1) can be dismantled and be connected with high-voltage electrode part (6), high-voltage electrode part (6) correspond transmission needle (4) have seted up transmission hole (64), transmission needle (4) pass through transmission hole (64) with high-voltage electrode part (6) set up relatively and each other and do not contact.

2. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 1 wherein: the high-voltage electrode component (6) is provided with a plug-in connection part (62), the first PCB (1) is provided with a mounting hole (11), and the plug-in connection part (62) is fixedly plugged into the mounting hole (11).

3. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 2 wherein: the high-voltage electrode component (6) is provided with a plurality of metal sheets (63), and when the high-voltage electrode component (6) is mounted on the mounting hole (11), the metal sheets (63) enable the high-voltage electrode component (6) to be fixedly connected to the first PCB (1) through bending.

4. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 3 wherein: the high-voltage electrode component (6) is provided with an ion electrode cover (61), and the outer wall of the ion electrode cover (61) and the bent metal sheet (63) are clamped and fixed on the first PCB (1) in a matching way.

5. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 1 wherein: the utility model discloses a refrigerating device, including cooling piece (3), transmitting needle (4) one end is equipped with heat conduction piece (41), heat conduction piece (41) one end support in second PCB board (2), heat conduction piece (41) other end support in cooling piece (3), messenger second PCB board (2) with cooling piece (3) separate the setting.

6. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 1 wherein: the second PCB (2) is arranged between the first PCB (1) and the refrigerating sheet (3), a through hole (21) is formed in the second PCB (2), and the transmitting needle (4) penetrates through the through hole (21) and is electrically connected with the second PCB (2).

7. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 1 wherein: the second PCB (2) is fixedly connected with a heat dissipation piece (7), and the heat dissipation piece (7) is in contact connection with a heating end (31 b) of the bismuth telluride P/N type semiconductor (31).

8. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 7 wherein: the heat dissipation piece (7) is provided with a mounting frame (71), and the refrigerating sheet (3) is embedded in the mounting frame (71).

9. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 7 wherein: the heat dissipation piece (7) is provided with a plurality of heat dissipation fins (72), and the heat dissipation fins (72) are distributed on the heat dissipation piece (7) at equal intervals.

10. An ionized water generating apparatus having bismuth telluride semiconductor as claimed in claim 7 wherein: positioning columns (73) are arranged on two sides of the radiating piece (7), threaded holes (74) are formed in the positioning columns (73), hanging lugs (22) are arranged on the second PCB (2) corresponding to the positioning columns (73), and the second PCB passes through the hanging lugs (22) and is in threaded connection with the threaded holes (74) through screws.

Images