CN219163900U - Mode-selecting laser - Google Patents
Mode-selecting laser Download PDFInfo
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- CN219163900U CN219163900U CN202320257051.7U CN202320257051U CN219163900U CN 219163900 U CN219163900 U CN 219163900U CN 202320257051 U CN202320257051 U CN 202320257051U CN 219163900 U CN219163900 U CN 219163900U
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Abstract
The utility model relates to a mode selection laser instrument, including the pumping source with set gradually in pumping source goes out laser crystal and mode selection crystal on the light direction, the first light beam of pumping source output is incident to laser crystal, so that laser crystal output second light beam, the second light beam utilizes the absorption effect of mode selection crystal is in order to output the light beam of predetermineeing the wavelength. The stability of mode selection laser is helped to promote.
Description
Technical Field
The application relates to the technical field of solid lasers, in particular to a mode-selecting laser.
Background
The laser is distinguished from a general light source because it has good directivity, monochromaticity, and coherence. The output of an ideal laser should have only one mode, and in reality, most lasers operate in multiple modes if no mode selection is used. Multimode lasers often have uneven beam energy distribution and large divergence angles of light spots, which seriously affects the application of the lasers in some special occasions.
The single longitudinal mode operation of the laser mainly depends on the mode selection function of the cavity mode selection element, and a strong mode competition exists between the cavity oscillation mode and the cavity oscillation laser all the time, and likewise, the device instability of the laser is increased by introducing the selection element into the laser, and other optical elements are also required to be introduced for adjustment so as to enable the laser to reach constant intensity, thereby increasing the complexity and the instability of the laser.
Thus, a need exists for a mode-selective laser.
Disclosure of Invention
The application provides a mode-selective laser aiming at the problem that the instability of a laser is increased due to the fact that a selective element is introduced into the laser.
The technical scheme is as follows:
the utility model provides a mode selection laser, includes the pumping source and set gradually in pumping source goes out laser crystal and mode selection crystal in the light direction, the first light beam of pumping source output is incident to the laser crystal, so that laser crystal output second light beam, the second light beam utilizes the absorption effect of mode selection crystal to output the light beam of preset wavelength.
By adopting the technical scheme, the laser crystal emission spectral line and the absorption spectral line of the mode selection crystal are matched, so that the light beam with larger relative ratio of gain to loss can be amplified and output, and the light with smaller relative ratio of gain to loss can be restrained, thereby the light beam oscillated in the laser crystal and the mode selection crystal plays a role in selection, and meanwhile, the mode selection element with complex structure is not required to be added, and the structure of the laser is compact and simplified, so that the purpose of improving the stability of the laser is achieved.
Optionally, a coupling component is disposed between the pump source and the laser crystal, and the coupling component is configured to couple the first light beam to the laser crystal.
By adopting the technical scheme, the laser emitted by the pumping source is converged into the laser crystal, so that the laser power input into the laser crystal is improved.
Optionally, the laser crystal is ytterbium-doped calcium-oxygen-yttrium borate crystal, and the mode selection crystal is cobalt-doped spinel crystal.
By adopting the technical scheme, the emission spectrum line of the ytterbium-doped calcium-oxygen-yttrium borate crystal has a very wide emission peak in a specific stage, the emission intensity is in a descending trend along with the increase of the wavelength, the absorption spectrum line of the cobalt-doped spinel crystal has a very wide absorption peak in the same stage, and the absorption intensity is in an ascending trend along with the increase of the wavelength, so that the emission spectrum lines of the two crystals correspond to the absorption spectrum line, the absorption intensity of the mode-selected crystal is in an ascending trend when the emission intensity of the laser crystal is in a descending trend, the absorption intensity of the initial wavelength in the specific stage is the lowest, and the absorption intensity of the laser crystal for other wavelengths is gradually increased, thereby achieving the purpose of outputting a single-mode light beam.
Optionally, the light incident surface of the laser crystal is plated with a dielectric film with high transmittance of 850-980nm and high reflection of 1050-1150nm, the light incident surface of the mode selection crystal is plated with a dielectric film with high transmittance of 1050-1150nm, and the light emergent surface of the mode selection crystal is plated with a dielectric film with partial transmittance of 1050-1150 nm.
By adopting the technical scheme, the dielectric films correspondingly plated on the light passing surfaces of the laser crystal and the mode selection crystal are used for reducing the loss of excitation light in 850-980nm wave bands, the light entering surface of the laser crystal and the light exiting surface of the mode selection crystal form a resonant cavity, and meanwhile, the 1140nm and 570nm high-reflection dielectric films are plated on the light entering surface of the laser crystal so as to improve the frequency vibration times of the second light beam in the resonant cavity and further improve the absorption capacity of other competing mode wavelengths.
Optionally, the light transmission length of the laser crystal is 0.5-20mm, and the light transmission length of the mode selection crystal is 1-10mm.
By adopting the technical scheme, the light transmission length of the laser crystal is 0.5-20mm, in the laser crystal with the excitation function, the proper light transmission length of the crystal is favorable for improving the pulse energy of the output light beam and improving the output power of the output light beam, the light transmission length of the mode selection crystal is 1-10mm, and the proper light transmission length is selected in the mode selection crystal to be favorable for the absorption rate of the mode selection crystal to the light beams in other modes, and meanwhile, the absorption rate of the light beams in the required output mode is reduced, so that the laser outputs the light beams in the single mode as much as possible.
Optionally, the coupling component is formed by one or more lenses, and the light-transmitting surface of each lens is plated with an antireflection film which is adapted to the wavelength of the first light beam emitted by the pumping source.
Through adopting above-mentioned technical scheme, use a plurality of lens combinations to help promoting the effect of converging to first light beam, at the light-passing surface antireflection coating of lens simultaneously to reduce the light loss of first light beam in the conduction in-process, and then promote the laser power of converging the light beam.
Optionally, the mode-selecting laser further includes an output mirror, and the output mirror is disposed in the light emitting direction of the mode-selecting crystal.
By adopting the technical scheme, the output mirror is arranged in the light emitting direction of the mode selection crystal, so that the laser crystal and the output mirror form a resonant cavity, and when a light beam is incident into the resonant cavity formed by the laser crystal and the output mirror, the light beam can oscillate for a plurality of times in the resonant cavity, thereby increasing the absorption effect of the mode selection crystal on light beams in other modes, and achieving the purpose of outputting a single-mode light beam.
Optionally, the light-passing surface of the output mirror is plated with a dielectric film with 1050-1150nm transmission, and the light-passing surface of the mode selection crystal is plated with a dielectric film with 1050-1150nm high transmission.
Optionally, the output mirror is a concave mirror, and the curvature radius of the concave mirror is 30-200mm.
By adopting the technical scheme, in the resonant cavity formed by the laser crystal, the mode selection crystal and the output mirror, the concave mirror is selected as the output mirror, so that excitation light excited by the laser crystal can oscillate for a plurality of times in the resonant cavity, when the curvature radius is selected to be 50-1000 nm, the larger the curvature radius is, the more the number of times that the light beam passes through the mode selection crystal is, and the absorption efficiency of the mode selection crystal on the absorption effect of the light beam of other modes is improved.
Optionally, the pump source is a semiconductor laser.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the laser crystal emission spectrum line is matched with the absorption spectrum line of the mode selection crystal, so that the light beam with larger relative ratio of gain to loss is amplified and output, and the light with smaller relative ratio of gain to loss is suppressed, thereby the light beam oscillated in the laser crystal and the mode selection crystal plays a role in selection, and meanwhile, a mode selection element with complex structure is not required to be added, so that the structure of the laser is compact and simplified, and the purpose of improving the stability of the laser is achieved;
2. the emission spectrum of ytterbium-doped calcium-oxygen-yttrium borate crystal has a very wide emission peak in a specific stage, the emission intensity is in a descending trend along with the increase of the wavelength, the absorption spectrum of cobalt-doped spinel crystal has a very wide absorption peak in the same stage, and the absorption intensity is in an ascending trend along with the increase of the wavelength, so that the emission spectrum and the absorption spectrum of the two crystals correspond to each other, the absorption intensity of the mode-selected crystal is in an ascending trend when the emission intensity of the laser crystal is in a descending trend, the absorption intensity of the initial wavelength in the specific stage is the lowest, and the absorption intensity of the laser crystal for other wavelengths is gradually increased, thereby achieving the purpose of outputting a single-mode light beam.
Drawings
Fig. 1 is a schematic optical path diagram of a mode-selective laser according to a first embodiment of the present application;
fig. 2 is a schematic optical path diagram of a mode-selective laser according to a second embodiment of the present application;
FIG. 3 is an emission line of ytterbium-doped calcium-oxygen-yttrium borate crystals provided herein;
fig. 4 is an absorption line of the cobalt-doped spinel crystals provided herein.
Reference numerals illustrate: 1. a pump source; 2. a laser crystal; 3. selecting a mould crystal; 4. a coupling assembly; 5. an output mirror.
Detailed Description
A mode-selective laser is provided in further detail below in conjunction with fig. 1-4.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate a relative positional relationship, which changes accordingly when the absolute position of the object to be described changes.
Referring to fig. 1, a first embodiment of the present application provides a back electrode structure, which includes a pump source 1, and a laser crystal 2 and a mode selection crystal 3 sequentially disposed in the light emitting direction of the pump source 1.
The pump source 1 is used for outputting and emitting a first light beam, wherein the first light beam is red light with the wavelength of 850-980 nm. The pump source 1 may be any one of an infrared semiconductor laser, a single tube semiconductor laser, a bar or a bar stack.
The laser crystal 2 is configured to convert a first light beam output by the pump source 1 into a second light beam, where the first light beam and the second light beam have different wavelengths.
In one example, the first beam is a semiconductor laser emitting a light beam with a wavelength of 980nm, and the second beam is a near-infrared laser generated by excitation of the first beam by the laser crystal 2, including, but not limited to, a laser with a wavelength of 1050-1150 nm.
The mode-selecting crystal 3 absorbs the light beams of different modes in the second light beam with different absorption intensities so as to realize single longitudinal mode output of the laser. And there may be various combinations between the laser crystal 2 and the mode selection crystal 3, including that the laser crystal 2 and the mode selection crystal 3 are adhered by gluing, or that the laser crystal 2 and the mode selection crystal 3 are adsorbed by using a photoresist, or that the laser crystal 2 and the mode selection crystal 3 are placed separately.
Wherein the laser crystal 2 is ytterbium-doped calcium-oxygen-yttrium borate crystal, and the mode selection crystal 3 is cobalt-doped spinel crystal. The emission spectrum of ytterbium-doped calcium-oxygen-yttrium borate crystal has a very wide emission peak in a specific stage, the emission intensity is in a descending trend along with the increase of the wavelength, the absorption spectrum of cobalt-doped spinel crystal has a very wide absorption peak in the same stage, and the absorption intensity is in an ascending trend along with the increase of the wavelength, so that the emission spectrum and the absorption spectrum of the two crystals correspond to each other, the absorption intensity of the mode selection crystal 3 is in an ascending trend when the emission intensity of the laser crystal 2 is in a descending trend, the absorption intensity of the initial wavelength in the specific stage is the lowest, and the absorption intensity of the other wavelengths is gradually increased, thereby achieving the purpose of outputting a single-mode light beam.
FIG. 3 is an emission line of ytterbium doped calcium yttrium oxide crystals (Yb: YCOB), where the abscissa is wavelength and the ordinate is emission intensity. FIG. 4 shows a cobalt doped spinel crystal (Co 2+ :MgAI 2 O 4 ) Wherein the abscissa is the wavelength and the ordinate is the absorption intensity. As shown in figures 3 and 4, the emission line of the ytterbium-doped calcium-oxygen-yttrium borate crystal is in the range of 1050-1150nm, the emission intensity decreases with the increase of wavelength, the absorption line of the cobalt-doped spinel crystal is in the range of 1050-1150nm, the absorption intensity increases with the increase of wavelength, so that the light beam with the partial wavelength in the emission line of the ytterbium-doped calcium-oxygen-yttrium borate crystal can be absorbed by the cobalt-doped spinel crystal with stronger absorption intensity, and the output of the laser needs to meet the requirement that the gain is larger than the loss, in the competition process of multi-wavelength mode, the light beam with the large relative ratio of the gain and the loss can be amplified and output, and the light with the small relative ratio of the gain and the loss can be restrained, so that the laser can achieve the purpose of single longitudinal mode output after being subjected to mode selection.
The light transmission length of the laser crystal 2 is 0.5-20mm, in the laser crystal 2 with the excitation function, the proper crystal light transmission length is helpful to improve the pulse energy of the output light beam and improve the output power of the output light beam, the light transmission length of the mode selection crystal 3 is 1-10mm, the proper light transmission length is selected in the mode selection crystal 3 to be helpful to the absorptivity of the mode selection crystal 3 to other mode light beams, and meanwhile, the absorptivity to the light beam needing to be output is reduced, so that the laser can output the light beam with a single mode as far as possible.
As shown in fig. 1, a coupling component 4 is disposed between the pump source 1 and the laser crystal 2, and the coupling component 4 is used for coupling the first light beam to the laser crystal 2, so as to help to converge the laser emitted from the pump source 1 into the laser crystal 2, thereby improving the laser power input into the laser crystal 2.
The coupling component 4 is formed by one or more lenses, and the light transmission surface of each lens is plated with an antireflection film which is suitable for the wavelength of the first light beam emitted by the pump source 1, namely, the coupling component 4 can be any one of a single lens, a double lens or a lens group. The combination of the lenses is beneficial to improving the converging effect on the first light beam, and meanwhile, the reflection reducing film is arranged on the light transmitting surface of the lens, so that the light loss of the first light beam in the transmission process is reduced, and the laser power of the converging light beam is further improved.
In order to enhance the absorption capacity to other competing mode wavelengths, the light-in surface of the laser crystal 2 is coated with a dielectric film with high transmittance of 850-980nm and high reflection of 1050-1150nm, the light-in surface of the mode selection crystal 3 is coated with a dielectric film with high transmittance of 1050-1150nm, the light-out surface of the mode selection crystal 3 is coated with a dielectric film with partial transmittance of 1050-1150nm, thereby the light-in surface of the laser crystal 2 is used as an input mirror of a resonant cavity, the light-out surface of the mode selection crystal 3 is used as an output mirror 5 of the resonant cavity, and when the mode selection crystal 3 is a cobalt-doped spinel crystal, the anisotropic saturable absorption characteristic of the mode selection crystal 3 can be utilized, so that the single-pass absorption rate of the second light beam in the wave band of 1050-1150nm is within 10%. Since the second light beam oscillates a plurality of times in the resonant cavity composed of the laser crystal 2 and the mode selection crystal 3, the absorption capacity for other competing mode wavelengths is further improved.
According to the scheme, the mode selection output of the light beam can be realized only by using the pump source 1, the laser crystal 2 and the mode selection crystal 3, the light beam with larger relative ratio of gain to loss can be amplified and output only by matching the emission spectrum line of the laser crystal 2 and the absorption spectrum line of the mode selection crystal 3, and the light with smaller relative ratio of gain to loss can be restrained, so that the light beam oscillated in the laser crystal 2 and the mode selection crystal 3 plays a role in selection, and meanwhile, a mode selection element with complex structure is not required to be added, so that the structure of the laser is compact and simplified, and the purpose of improving the stability of the laser is achieved.
The implementation principle is as follows: the first light beam emitted by the pump source 1 is converged on the laser crystal 2 through the coupling component 4, the laser crystal 2 absorbs the first light beam to generate a second light beam with the wavelength of 1050-1150nm, and the second light beam oscillates for a plurality of times in the resonant cavity formed by the laser crystal 2 and the mode selection crystal 3, so that other competing mode wavelengths are absorbed in a large quantity to generate a single mode light beam.
Referring to fig. 2, fig. 2 is a schematic diagram of a mode-selecting laser according to a second embodiment of the present application, and the structure of the mode-selecting laser according to the second embodiment is substantially the same as that of the mode-selecting laser according to the first embodiment, in which, in the present embodiment, an output mirror 5 is further disposed in the light-emitting direction of the mode-selecting crystal 3.
In this embodiment, the light incident surface of the laser crystal 2 is used as an input mirror to form a resonant cavity with the newly added output mirror 5, wherein the output mirror 5 is a concave mirror, the light passing surface of the output mirror 5 is plated with a dielectric film with 1050-1150nm partially transmitted, the light passing surface of the mode selection crystal 3 is plated with a dielectric film with 1050-1150nm high transmitted, and the curvature radius of the concave mirror is 30-200mm. In the resonant cavity formed by the light incident surface of the laser crystal 2 and the output mirror 5, the concave mirror is selected as the output mirror 5, so that the second light beam can oscillate in the resonant cavity, the radius of curvature is selected to be 50-1000mm, the larger the radius of curvature is, the more the second light beam oscillations reflected to the mode selection crystal 3 are, and the absorption efficiency of the mode selection crystal 3 on other competing mode wavelengths in the second light beam is improved. Wherein, the partial transmission means that the transmittance of light with a specific wavelength or wave Duan Rushe is 1% -80%.
The embodiments of the present utility model are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in this way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (10)
1. A mode-selective laser, characterized by: the laser crystal device comprises a pumping source (1), and a laser crystal (2) and a mode selection crystal (3) which are sequentially arranged in the light emitting direction of the pumping source (1), wherein a first light beam output by the pumping source (1) is incident to the laser crystal (2) so that the laser crystal (2) outputs a second light beam, and the second light beam utilizes the absorption effect of the mode selection crystal (3) so as to output a light beam with a preset wavelength.
2. The mode-selective laser of claim 1, wherein: a coupling assembly (4) is arranged between the pump source (1) and the laser crystal (2), and the coupling assembly (4) is used for coupling the first light beam to the laser crystal (2).
3. The mode-selective laser of claim 1, wherein: the laser crystal (2) is ytterbium-doped calcium-oxygen-yttrium borate crystal, and the mode selection crystal (3) is cobalt-doped spinel crystal.
4. The mode-selective laser of claim 1, wherein: the light incident surface of the laser crystal (2) is plated with a medium film with high transmittance of 850-980nm and high reflection of 1050-1150nm, the light incident surface of the mode selection crystal (3) is plated with a medium film with high transmittance of 1050-1150nm, and the light emergent surface of the mode selection crystal (3) is plated with a medium film with partial transmittance of 1050-1150 nm.
5. The mode-selective laser of claim 1, wherein: the light transmission length of the laser crystal (2) is 0.5-20mm, and the light transmission length of the mode selection crystal (3) is 1-10mm.
6. The mode-selective laser of claim 2, wherein: the coupling component (4) is formed by one or more lenses, and the light transmission surface of each lens is plated with an antireflection film which is suitable for the wavelength of the first light beam emitted by the pumping source (1).
7. The mode-selective laser of claim 1, wherein: the mode-selecting laser also comprises an output mirror (5), and the output mirror (5) is arranged in the light-emitting direction of the mode-selecting crystal (3).
8. The mode-selective laser of claim 7, wherein: the light-passing surface of the output mirror (5) is plated with a dielectric film with 1050-1150nm transmission, and the light-passing surface of the mode selection crystal (3) is plated with a dielectric film with 1050-1150nm high transmission.
9. The mode-selective laser of claim 7, wherein: the output mirror (5) is a concave mirror, and the curvature radius of the concave mirror is 30-200mm.
10. A mode-selective laser according to any one of claims 1-9, characterized in that: the pump source (1) is a semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320257051.7U CN219163900U (en) | 2023-02-20 | 2023-02-20 | Mode-selecting laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320257051.7U CN219163900U (en) | 2023-02-20 | 2023-02-20 | Mode-selecting laser |
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| Publication Number | Publication Date |
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| CN219163900U true CN219163900U (en) | 2023-06-09 |
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| CN202320257051.7U Active CN219163900U (en) | 2023-02-20 | 2023-02-20 | Mode-selecting laser |
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