CN219099304U - Cleaning device for semiconductor equipment parts - Google Patents
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- CN219099304U CN219099304U CN202223335557.XU CN202223335557U CN219099304U CN 219099304 U CN219099304 U CN 219099304U CN 202223335557 U CN202223335557 U CN 202223335557U CN 219099304 U CN219099304 U CN 219099304U
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Abstract
The utility model discloses a cleaning device for parts of semiconductor equipment, which is used for cleaning objects to be cleaned on the parts, and comprises: a reaction furnace in which the parts are cleaned; the heating unit is used for heating the reaction furnace; a gas supply device for supplying a cleaning gas to the reaction furnace; the reaction furnace is characterized by being divided into a plurality of mutually independent cleaning areas, each cleaning area is used for holding the parts, each cleaning area is provided with an independent air inlet channel and an independent air outlet channel, the air inlet channels are used for introducing cleaning gas, and the air outlet channels are used for discharging the cleaning gas and reaction products of objects to be cleaned or objects to be cleaned. The utility model can improve the efficiency of cleaning parts, improve the utilization rate of cleaning gas and reduce the cleaning cost.
Description
Technical Field
The utility model relates to the technical field of semiconductor equipment, in particular to a cleaning device for parts of semiconductor equipment.
Background
In a chemical vapor deposition process, particularly in a metal vapor chemical deposition MOCVD process, in order to carry a wafer and heat the wafer, the wafer is generally placed on a tray, but in actual process, deposition does not only occur on the surface of the wafer, but also occurs on the surface of the tray, so that the deposits on the tray need to be cleaned in time, otherwise, the process effect is affected.
The trays are typically cleaned by placing one tray in a relatively closed height Wen Kongjian and flowing a cleaning gas through the tray and reacting with the deposits to clean the tray. Since one tray needs to be taken out for cleaning of the next tray after cleaning each time, the temperature is reduced when one tray is taken out from the high-temperature space and another tray to be cleaned is placed, the temperature is required to be raised to the cleaning temperature again, the cleaning efficiency is low, the energy consumption is high, and the production requirement cannot be met. In addition, since a purge gas is required to be directly introduced, the purge gas tends to be an expensive gas such as chlorine gas or the like, which results in a high cost of purging.
Disclosure of Invention
The utility model aims to provide a cleaning device for semiconductor equipment parts, which is used for improving the cleaning efficiency, reducing the cleaning cost and improving the cleaning gas utilization rate.
In order to achieve at least one of the above objects, the present utility model is achieved by the following technical solutions:
a cleaning apparatus for cleaning a component of a semiconductor device, for cleaning an object to be cleaned on the component, comprising: a reaction furnace in which the parts are cleaned; the heating unit is used for heating the reaction furnace; a gas supply device for supplying a cleaning gas to the reaction furnace; the reaction furnace is characterized by being divided into a plurality of mutually independent cleaning areas, each cleaning area is used for holding the parts, each cleaning area is provided with an independent air inlet channel and an independent air outlet channel, the air inlet channels are used for introducing cleaning gas, and the air outlet channels are used for discharging the cleaning gas and reaction products of objects to be cleaned or objects to be cleaned.
Preferably, the cleaning device further comprises: a filter for filtering the reaction product or the object to be cleaned; wherein the filter is connected with the exhaust passage.
Preferably, the cleaning device further comprises: and a gas circulation unit having one end connected to the filter and the other end connected to the gas inlet passage, so that the cleaning gas circulates in a loop formed between the reaction furnace and the filter.
Preferably, the cleaning device further comprises: and the air pump is communicated with the pipeline between the filter and the gas circulation unit through an air extraction valve, and a circulation valve is further arranged between the air extraction valve and the gas circulation unit.
Preferably, the cleaning device further comprises: and the cold trap is used for cooling the gas flowing through and is arranged between the filter and the exhaust channel.
Preferably, the cleaning device further comprises: the reaction furnace is arranged in the vacuum cavity.
Preferably, the reaction furnace is detachably arranged in the vacuum cavity.
Preferably, a gas channel exists between the vacuum cavity and the reaction furnace.
Preferably, the gas supply means is further adapted to supply a purge gas to the gas channel.
Preferably, the heating unit is disposed in the vacuum chamber.
Preferably, the air inlet through hole between the air inlet channel and the cleaning area and the air outlet through hole between the air outlet channel and the cleaning area are symmetrically arranged at two sides of the cleaning area.
Preferably, the intake passage or the exhaust passage is not provided between the cleaning regions.
Preferably, the cleaning region is rectangular or cylindrical.
PreferablyThe object to be cleaned is GaN, alN or AlGaN, and the cleaning gas is N 2 、H 2 、CL 2 Or NH 3 。
Preferably, the reaction furnace is divided into a plurality of the cleaning areas by a partition plate, and the partition plate is detachable.
Preferably, a limiting block is arranged in the cleaning area.
Preferably, a replaceable speed regulating unit is arranged in the cleaning region and is used for regulating the flow rate of the cleaning gas flowing through the cleaning region.
Preferably, the space occupied by the speed regulating unit in the cleaning region gradually increases from the air intake through hole to the air exhaust through hole.
Preferably, the exhaust passage and/or the intake passage are provided with independently controlled valves.
Preferably, the material of the reaction furnace is one or a combination of a plurality of graphite, graphite silicon carbide, graphite thallium carbide, graphite tungsten carbide, graphite niobium carbide and graphite molybdenum carbide.
The utility model has at least one of the following advantages:
according to the cleaning device for the semiconductor equipment parts, the plurality of mutually independent cleaning areas are arranged in the reaction furnace, and each cleaning area can be used for placing the parts for cleaning, so that the number of the parts for cleaning is increased, a circulation loop is provided for cleaning gas of the reaction furnace, the cleaning gas can be recycled, and the utilization rate of the cleaning gas is improved. Through setting up the speed governing unit, guarantee that the clean gas of each independent clean region flows through the velocity of flow of waiting to clean spare part unanimously, because there is certain relation clean velocity and the velocity of flow of clean gas, consequently can also guarantee that the clean velocity of each spare part is unanimous.
Drawings
Fig. 1 is a schematic structural diagram of a cleaning device for parts of a semiconductor device according to an embodiment of the present utility model;
FIG. 2 is a schematic view of a reaction furnace according to an embodiment of the present utility model;
fig. 3 is a schematic structural diagram of another reaction furnace according to an embodiment of the present utility model.
Detailed Description
The cleaning device for semiconductor equipment parts according to the present utility model will be described in further detail with reference to the accompanying drawings and detailed description. The advantages and features of the present utility model will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the utility model. For a better understanding of the utility model with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the utility model to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the utility model, are included in the spirit and scope of the utility model which is otherwise, without departing from the spirit or essential characteristics thereof.
For a better understanding of the present utility model, specific examples are set forth to illustrate the present utility model.
As shown in fig. 1, the present embodiment provides a cleaning apparatus for cleaning a component of a semiconductor device, which is used for cleaning an object to be cleaned on the component of the semiconductor device, and includes: a reaction furnace 2, wherein components are placed in the reaction furnace 2 to be cleaned; a heating unit 3 provided around the reaction furnace 2 for heating the reaction furnace 2; a gas supply device 8 for supplying a cleaning gas to the reaction furnace 3; the reaction furnace 3 is divided into a plurality of mutually independent cleaning areas 17, each cleaning area 17 is used for holding parts, each cleaning area 17 is provided with an independent air inlet channel 9 and an air outlet channel 10, the air inlet channel 9 is used for introducing cleaning gas, and the air outlet channel 10 is used for discharging the cleaning gas and reaction products of objects to be cleaned or objects to be cleaned. Preferably, a separate valve is provided on the separate air inlet channel 9 or air outlet channel 10, and the flow rate and flow rate of the cleaning gas in the air inlet channel 9 or air outlet channel 10 can be independently controlled to adapt to different parts to be cleaned in each cleaning area.
In this embodiment, the reaction furnace 2 has a square shape. It will be appreciated that the shape of the reactor 2 may be selected to be appropriate depending on the component to be cleaned. In order to facilitate the taking and placing of the parts to be cleaned, the reaction furnace 2 is provided with a door plate which can be independently opened and closed.
In this embodiment, the reaction product after the reaction of the cleaning object or the cleaning gas with the cleaning object and the unreacted cleaning gas are discharged from the exhaust passage 10, and in order to reduce the reaction product or the cleaning object therein, a filter 5 is provided downstream of the exhaust passage 10, that is, in the cleaning apparatus, the cleaning gas flows through the exhaust passage 10 and then through the filter 5.
Further, in order to enable the gas in the cleaning device to circulate, the cleaning device in this embodiment further includes a gas circulation unit 7, and the gas circulation unit 7 is disposed between the gas inlet channel 9 and the filter 5, that is, one end of the gas circulation unit 7 is connected to the filter 5, and the other end is connected to the gas inlet channel 9, thereby powering the gas circulation in the cleaning device. By circulating the gas, the cleaning gas that has failed to react with the object to be cleaned in the reaction furnace 2 can be recycled, and the utilization ratio of the cleaning gas can be improved.
In some embodiments, in order to improve the reaction efficiency or avoid side effects caused by oxygen of air, etc., before introducing the cleaning gas into the reaction furnace 2, the air in the reaction furnace 2 and the corresponding pipes needs to be pumped away, the cleaning device further comprises an air pump 6, the air pump 6 is communicated with the pipes between the filter 5 and the gas circulation unit 7 through an air pump valve 13, and a circulation valve 14 is further arranged between the air pump valve 13 and the gas circulation unit 7. Before cleaning parts, the circulation valve 14 is closed, the air extraction valve 13 is opened to enable the air extraction pump 6 to start working, after the air pressure in the reaction furnace 2 reaches a preset pressure, the air extraction valve 13 and the air extraction pump 6 are closed, the circulation valve 14 is opened, the gas supply device 8 starts to introduce cleaning gas into the reaction furnace 2, when the pressure in the reaction furnace 2 reaches a set value, the gas supply device 8 stops introducing the cleaning gas, the gas circulation unit 7 starts working, and the gas in the cleaning device starts to circulate, so that the aim of recycling the cleaning gas is fulfilled, and the utilization rate of the cleaning gas is improved. The cleaning gas also has a heat transfer function because the reaction furnace 2 is in a vacuum state. Further, it is easily understood that the time at which the gas circulation unit 7 starts to operate may be any time after the suction valve 13 is closed.
In some embodiments, the cleaning device further comprises a cold trap 4, the cleaning gas is high in temperature when being discharged from the exhaust channel 10 after being reacted in the reaction furnace 2, and typically, the temperature of the cleaning gas reaches 700-1300 ℃, so that some reaction products may be gaseous, in some embodiments, some reactants may be changed into gaseous after being baked at high temperature, and by arranging the cold trap 4 between the exhaust channel 10 and the filter 5, the temperature of the cleaning gas, the reaction products and the substances to be cleaned flowing through is reduced, so that the gaseous reaction products are changed into liquid or solid, and the filtering effect of the filter 5 is improved. Typically, the temperature of the cold trap is from-20 ℃ to 30 ℃, preferably the temperature of the cold trap is 0 ℃.
In some embodiments, the material of the reaction furnace 2 is graphite, but in order to increase the service life, the material of the reaction furnace 2 may be one or a combination of several of graphite-plated silicon carbide, graphite-plated thallium carbide, graphite-plated tungsten carbide, graphite-plated niobium carbide, and graphite-plated molybdenum carbide. Since the cleaning gas in the reaction furnace 2 may be harmful and the reaction furnace 2 is maintained under a certain vacuum, the reaction furnace 2 is required to have sealability, but the reaction furnace 2 is difficult to maintain in a sealed state due to the limitation of the material of the reaction furnace 2 and the high temperature during cleaning. Thus, in some embodiments, the cleaning apparatus further comprises a vacuum chamber 1, the reactor 2 being disposed within the vacuum chamber 1, the relative vacuum of the reactor 2 being maintained by the vacuum chamber 1, thereby avoiding leakage of cleaning gas into the open space. The vacuum cavity 1 is also provided with a door plate which can be opened and closed, the reaction furnace 2 is fixedly arranged in the vacuum cavity 1, when parts are required to be taken and placed, the door plate of the vacuum cavity 1 is firstly opened, then the door plate of the reaction furnace 2 is opened, and when the parts are taken and placed, the door plate of the reaction furnace 2 and the door plate of the vacuum cavity 1 are closed. It will be appreciated that the cleaning device also comprises locking means for opening and closing the door panels of the vacuum chamber 1 and the reactor 2.
Some parts cannot quickly drop from the cleaning temperature to room temperature, which may otherwise crack or affect their performance parameters. Such parts need to be placed in the reaction furnace 2 to be slowly cooled after cleaning, and the cleaning device is occupied and cannot clean the subsequent parts. To solve this problem, in some embodiments, the reaction furnace 2 is integrally and removably disposed in the vacuum chamber 1, or the reaction furnace 2 is easily and removably disposed in the vacuum chamber 1, for example, the reaction furnace 2 is disposed in the vacuum chamber 1 in a drawer-like manner, that is, two sides of the vacuum chamber 1 are provided with sliding grooves matching the air inlet channel 9 and the air outlet channel 10 of the reaction furnace 2, and the reaction furnace 2 is removed through the sliding grooves. In this way, after cleaning of the components in the reaction furnace 2 is completed, the whole reaction furnace 2 is taken out, and the components may be placed in the reaction furnace 2 for cooling. When the reaction furnace 2 is taken out, the parts to be cleaned can be placed in another reaction furnace 2 and the other reaction furnace 2 is placed in the vacuum cavity 1 for cleaning, so that the use efficiency of the cleaning device is improved.
In some embodiments, the heater 3 may be disposed between the vacuum chamber 1 and the reaction furnace 2, alternatively, the heater 3 may be disposed outside 6 sides of the square reaction furnace 2, preferably, the heater 3 is an induction heater, and the reaction furnace 2 is heated by electromagnetic induction, but in some embodiments, other heating methods may be used, such as resistance heating, infrared heating, radiation heating, and the like.
In some embodiments, a gas channel exists between the reaction furnace 2 and the vacuum chamber 1, preferably, the gas channel may be a gap between the reaction furnace 2 and the vacuum chamber 1. The arrangement of the gas channel can reduce the heat transfer of the reaction furnace 2 to the vacuum cavity 1, increase the heat insulation, save electric energy, and in some cases, the reaction furnace 2 can be disassembled and assembled more conveniently. In some embodiments, the gas supply device 8 also supplies purge gas to the gas channel, and as described above, the reaction furnace 2 does not have good sealing, and the cleaning gas, the reaction product or the object to be cleaned may leak into the gas channel between the reaction furnace 2 and the vacuum chamber 1, so that the cleaning gas is prevented from accumulating between the reaction furnace 2 and the vacuum chamber 1 by introducing the purge gas into the gas channel. The purge gas is nitrogen, but may be some other inert gas.
Optionally, the component to be cleaned is a tray for supporting the wafer in the chemical deposition apparatus, and may be other components to be cleaned, such as a cover ring for shielding the outer edge of the wafer in the epitaxy process, a focus ring around the electrostatic chuck in the etching apparatus, and so on. The cleaning gas is a gas that reacts with the cleaning object, in some embodiments GaN, alN or AlGaN, and the cleaning gas is H 2 、CL 2 Or NH 3 In some embodiments, the cleaning gas may be a gas such as N, which is purged after baking the object to be cleaned at high temperature 2 Etc.
With continued reference to fig. 2, the cleaning region may have a rectangular or cylindrical shape, and it is understood that the cleaning region may have other shapes to accommodate different parts to be cleaned. Furthermore, since the flow of cleaning gas may cause movement of parts during cleaning, such movement may cause collision of parts with the walls of the reactor 2, thereby damaging the parts to be cleaned, in some embodiments, a number of stoppers 15 are provided in each cleaning region of the reactor 2. It will be appreciated that some components may require cleaning of their respective surfaces, and thus in some embodiments the stop 15 may provide support to minimize the contact area between the components and the cleaning area, thereby allowing more thorough cleaning. The respective cleaning areas in fig. 2 are stacked together, each of which is connected to the air intake passage 9 through an air intake through hole and connected to the air exhaust passage 10 through an air exhaust through hole, the air intake through hole and the air exhaust through hole being disposed on opposite sides of the cleaning area. When the cleaning area is axisymmetric, the air inlet through holes and the air outlet through holes are symmetrically arranged at two sides of the cleaning area. In order to further increase the area of the reaction furnace 2 accommodating the parts, an intake passage or an exhaust passage is not provided between the cleaning areas. In some implementations, the shape of the cleaning area and the positions of the air inlet through holes and the air outlet through holes can be set according to the shape of the parts, so that the flow rate of cleaning gas on the surfaces of the parts is similar, the cleaning efficiency is improved, and the cleaning time of each position of the parts is consistent. Alternatively, the cleaning region may be a plurality of layers, each layer in turn being vertically separable into a plurality of cleaning regions.
Specifically, the reaction furnace 2 is integrally provided, that is, the reaction furnace 2 is integrally manufactured or not easily assembled and disassembled, but alternatively, the reaction furnace 2 is divided into a plurality of independent cleaning areas by a partition plate, and the partition plate can be taken out to expand the volume of the cleaning areas so as to clean parts of different sizes.
As previously mentioned, the cleaning speed of a component is related to the flow rate of cleaning gas flowing across its surface, i.e., the greater the flow rate of cleaning gas, the faster the component is cleaned. Thus, in some embodiments, a speed regulating unit 16 is provided in each cleaning zone of the reactor, the speed regulating unit 16 being replaceable according to specific cleaning requirements, the speed regulating unit 16 being provided on top of the cleaning zone, the flow rate of the cleaning gas being varied by taking up a certain space in the cleaning zone. The particular governor unit 16 is a plate-like member that fits over the top of the cleaning area. Preferably, the volume of the speed regulating unit 16 is gradually increased in the direction from the air inlet through hole to the air outlet through hole, so that the speed of the cleaning gas flowing through the surface of the component is gradually increased along with the flowing direction of the cleaning gas under the condition that the flow rate of the cleaning gas is unchanged. In the process of cleaning gas flowing, the cleaning gas can react with the reactant to be reacted on the surface of the part or sweep the baked reactant to be reacted, so that the concentration of the cleaning gas is reduced, and the consistency of the cleaning speed of the cleaning gas flowing through the surface of the part is ensured by fine adjustment of the flow speed.
To further illustrate the advantages of the present utility model, a method of using the cleaning device is further described based on the cleaning device in the above-described embodiments. The most basic application method comprises the following steps:
s1, placing the parts in a cleaning area.
S2, a gas supply device 8 supplies clean gas to the reaction furnace 2, and the heating unit 3 heats the reaction furnace 2.
In step S2, the supply of the cleaning gas to the reaction furnace 2 by the gas supply device 8 and the heating of the reaction furnace 2 by the heating unit 3 do not have to be performed sequentially, and the cleaning gas may be supplied to the reaction furnace 2 or the reaction furnace 2 may be heated first. In some embodiments, in order to avoid that the cleaning gas does not react with the object to be cleaned or the object to be cleaned is not baked at high temperature at low temperature, the cleaning gas is wasted or circulated in the cleaning device, the reaction furnace 2 may be heated first, and then the gas supply device 8 supplies the cleaning gas to the reaction furnace 2.
In some embodiments, in order to avoid the reaction of the cleaning gas with oxygen in the air, the cleaning gas needs to be pumped to a specified first air pressure by the pump 6 before the cleaning gas is supplied to the reaction furnace 2, and after the first air pressure is reached, the cleaning gas is supplied to the reaction furnace 2.
In some embodiments, a gas circuit is formed in the cleaning device, which at least comprises the reaction furnace 2, the filter 5 and the gas circulation unit 7, the suction pump 6 pumps air from a pipeline between the filter 5 and the gas circulation unit 7, and the suction pump 6 is further provided with a suction valve 13 from a pipeline between the filter 5 and the gas circulation unit 7. After the air pump 6 pumps the reaction furnace to a specified first air pressure, the air pump valve 13 is closed to avoid air from reentering the circulation loop of the cleaning device. In order to avoid excessive cleaning gas, the gas supply device 8 stops the gas supply after supplying the cleaning gas to the reaction furnace 2 to a specified second gas pressure, and opens the gas circulation unit 7 after closing the extraction valve 13 to circulate the cleaning gas in the circuit for cleaning. Preferably, the gas circulation unit 7 is opened before the pressure in the reaction furnace 2 reaches the specified second gas pressure.
In some embodiments, after cleaning, the gas supply device 7 also introduces purge gas into the reaction furnace 2, so as to avoid the clean gas overflowing to pollute the environment or harm the human body when the reaction furnace 2 is opened to take out parts. In some embodiments, the reaction furnace 2 is disposed in the vacuum chamber 1, and a gas channel exists between the vacuum chamber 1 and the reaction furnace 2, so that the cleaning gas may escape into the gas channel between the vacuum chamber 1 and the reaction furnace 2 due to poor sealing performance of the reaction furnace, and the gas supply device 7 is further configured to supply the purge gas to the gas channel after the cleaning is completed for the same purpose.
In summary, according to the cleaning device for semiconductor device components provided in the embodiment of the present utility model, by providing a plurality of mutually independent cleaning areas in the reaction furnace, each cleaning area can be used for cleaning components, so that the number of components cleaned simultaneously is increased; in some embodiments, a circulation loop is further provided for the cleaning gas of the reaction furnace, so that the cleaning gas can be recycled, and the utilization rate of the cleaning gas is improved; in some embodiments, by arranging the speed regulating unit, the speed of the cleaning gas flowing through the parts to be cleaned in each independent cleaning area is ensured to be consistent, and the cleaning speed of each part is ensured to be consistent because a certain relation exists between the cleaning speed and the speed of the cleaning gas.
The foregoing is merely illustrative of the present utility model, and the present utility model is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present utility model. Therefore, the protection scope of the present utility model shall be subject to the protection scope of the claims.
Claims (20)
1. A cleaning apparatus for cleaning a component of a semiconductor device, for cleaning an object to be cleaned on the component, comprising: a reaction furnace in which the parts are cleaned; the heating unit is used for heating the reaction furnace; a gas supply device for supplying a cleaning gas to the reaction furnace; the reaction furnace is characterized by being divided into a plurality of mutually independent cleaning areas, each cleaning area is used for holding the parts, each cleaning area is provided with an independent air inlet channel and an independent air outlet channel, the air inlet channels are used for introducing cleaning gas, and the air outlet channels are used for discharging the cleaning gas and reaction products of objects to be cleaned or objects to be cleaned.
2. The cleaning apparatus as recited in claim 1, further comprising: a filter for filtering the reaction product or the object to be cleaned; wherein the filter is connected with the exhaust passage.
3. The cleaning apparatus as recited in claim 2, further comprising: and a gas circulation unit having one end connected to the filter and the other end connected to the gas inlet passage, so that the cleaning gas circulates in a loop formed between the reaction furnace and the filter.
4. A cleaning device as recited in claim 3, further comprising: and the air pump is communicated with the pipeline between the filter and the gas circulation unit through an air extraction valve, and a circulation valve is further arranged between the air extraction valve and the gas circulation unit.
5. The cleaning apparatus as recited in claim 2, further comprising: and the cold trap is used for cooling the gas flowing through and is arranged between the filter and the exhaust channel.
6. The cleaning apparatus as recited in claim 1, further comprising: the reaction furnace is arranged in the vacuum cavity.
7. The cleaning apparatus defined in claim 6, wherein the reaction furnace is removably disposed within the vacuum chamber.
8. The cleaning apparatus defined in claim 7, wherein a gas passage exists between the vacuum chamber and the reaction furnace.
9. The cleaning apparatus defined in claim 8, wherein the gas supply means is further for supplying a purge gas to the gas channel.
10. The cleaning apparatus defined in claim 9, wherein the heating unit is disposed in the vacuum chamber.
11. The cleaning apparatus according to claim 1, wherein the intake through hole between the intake passage and the cleaning region and the exhaust through hole between the exhaust passage and the cleaning region are provided on opposite sides of the cleaning region.
12. The cleaning apparatus defined in claim 11, wherein the cleaning region is rectangular or cylindrical.
13. The cleaning apparatus defined in claim 1, wherein the air inlet channel or the air outlet channel is not disposed between the cleaning regions.
14. The cleaning apparatus according to claim 1, wherein the cleaning material is GaN, alN or AlGaN, and the cleaning gas is N 2 、H 2 、CL 2 Or NH 3 。
15. The cleaning apparatus defined in claim 1, wherein the reactor is divided into a plurality of the cleaning areas by a partition plate, the partition plate being detachable.
16. The cleaning apparatus defined in claim 1, wherein a stop is disposed in the cleaning region.
17. The cleaning apparatus defined in claim 1, wherein a replaceable speed regulating unit is disposed within the cleaning zone, the speed regulating unit for regulating the flow rate of cleaning gas flowing through the cleaning zone.
18. The cleaning apparatus defined in claim 17, wherein the space occupied by the speed regulating unit in the cleaning region increases gradually in a direction from the intake passage to the exhaust passage.
19. The cleaning apparatus defined in claim 1, wherein independently controlled valves are provided on the exhaust passage and/or the intake passage.
20. The cleaning apparatus defined in claim 1, wherein the material of the reaction furnace is graphite.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223335557.XU CN219099304U (en) | 2022-12-12 | 2022-12-12 | Cleaning device for semiconductor equipment parts |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223335557.XU CN219099304U (en) | 2022-12-12 | 2022-12-12 | Cleaning device for semiconductor equipment parts |
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