CN219085277U - Integrated circuit constant temperature unit and integrated circuit process system - Google Patents

Abstract

The application provides an integrated circuit constant temperature unit. The integrated circuit thermostat unit is configured to maintain a temperature of a liquid in the liquid supply tube. The application also provides an integrated circuit process system. The integrated circuit process system comprises a heating unit, a control unit, a spraying unit and the integrated circuit constant temperature unit. The heating unit is configured to heat a developing solution. The control unit receives the developing solution from the heating unit through a first liquid supply pipe. The control unit is configured to control a flow rate of the developing solution. The spraying unit receives the developing solution from the control unit through a second liquid supply pipe. The spray unit is configured to spray the developer solution onto a wafer.

Description

Integrated circuit constant temperature unit and integrated circuit process system

Technical Field

The present disclosure relates to the field of semiconductors, and more particularly, to an integrated circuit constant temperature unit and an integrated circuit process system.

Background

In the prior art, when a developing process is performed on a wafer, it is generally necessary to heat the developing solution required for the process to a temperature required for the process. However, after the heated developer is transferred to other devices (such as a flow control device and a spraying device), the temperature of the developer cannot be maintained at the temperature required by the process due to dissipation of heat energy, which causes deviation of the process conditions, and finally, the process effect is not as expected, and the product yield is seriously affected.

Disclosure of Invention

In view of the above, the present application provides an integrated circuit thermostat unit and an integrated circuit process system to solve the above-mentioned problems.

According to one embodiment of the present application, an integrated circuit thermostat unit is provided. The integrated circuit thermostat unit is configured to maintain a temperature of a liquid in the liquid supply tube.

According to an embodiment of the present application, the integrated circuit thermostat unit includes: circulation device and thermostatic tube. The circulation device is configured to provide a constant temperature liquid at a fixed temperature. The constant temperature liquid circulates in the constant temperature pipe. The thermostatic tube surrounds the liquid supply tube.

According to an embodiment of the present application, the cross section of the thermostatic tube includes an annular structure, the liquid supply tube is disposed in an inner ring of the annular structure, and the thermostatic liquid circulates in the inner ring of the annular structure.

According to an embodiment of the application, the liquid supply pipe is connected between the heating unit and the flow control unit. The thermostatic tube includes a first section connected between an output of the heating unit and an input of the flow control unit.

According to an embodiment of the application, the liquid supply pipe is further connected between the flow control unit and the spraying unit. The thermostatic tube includes a second section connected between the output of the flow control unit and the input of the spray unit.

According to an embodiment of the present application, the liquid is a developer.

In accordance with one embodiment of the present application, an integrated circuit processing system is provided. The integrated circuit process system comprises the integrated circuit constant temperature unit.

According to an embodiment of the application, the integrated circuit process system further comprises a heating unit, a control unit and a spraying unit. The heating unit is configured to heat a developing solution. The control unit receives the developing solution from the heating unit through a first liquid supply pipe. The control unit is configured to control a flow rate of the developing solution. The spraying unit receives the developing solution from the control unit through a second liquid supply pipe. The spray unit is configured to spray the developer solution onto a wafer.

According to an embodiment of the application, the heating unit comprises a heat exchanger. The heat exchanger heats the developing solution by a resistance heating wire.

According to an embodiment of the application, the control unit comprises a flow meter.

In the integrated circuit constant temperature unit and the integrated circuit process system provided by the application, constant temperature liquid is circularly conveyed through the constant temperature pipe wrapping the first liquid supply pipe and the second liquid supply pipe, and the constant temperature liquid flowing in the constant temperature pipe can keep heat energy of developing liquid in the first liquid supply pipe and the second liquid supply pipe from being lost. Therefore, the developer which is heated to the temperature required by the process can still maintain the temperature required by the process after being transmitted to other units, thereby avoiding deviation of the process conditions and improving the yield of the product.

Drawings

The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate the application and, together with the description, do not limit the application. In the drawings:

FIG. 1 illustrates a block diagram of an integrated circuit processing system according to one embodiment of the present application.

FIG. 2 illustrates a schematic diagram of an integrated circuit processing system according to one embodiment of the present application.

Fig. 3 illustrates a cross-sectional view of a thermostatic tube according to an embodiment of the present application.

FIG. 4 illustrates a schematic diagram of an integrated circuit processing system according to one embodiment of the present application.

Detailed Description

The following disclosure provides various embodiments or examples that can be used to implement the various features of the present disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. It is to be understood that these descriptions are merely exemplary and are not intended to limit the present disclosure. For example, in the following description, forming a first feature on or over a second feature may include certain embodiments in which the first and second features are in direct contact with each other; and may include embodiments in which additional components are formed between the first and second features such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. Such reuse is for brevity and clarity purposes and does not itself represent a relationship between the different embodiments and/or configurations discussed.

Moreover, spatially relative terms, such as "under," "below," "lower," "upper," and the like, may be used herein to facilitate a description of the relationship between one element or feature to another element or feature as illustrated in the figures. These spatially relative terms are intended to encompass a variety of different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be placed in other orientations (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein interpreted accordingly.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the application are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. However, any numerical value inherently contains certain standard deviations found in their respective testing measurements. As used herein, "about" generally means that the actual value is within plus or minus 10%, 5%, 1% or 0.5% of a particular value or range. Alternatively, the term "about" means that the actual value falls within an acceptable standard error of the average value, depending on the consideration of those ordinarily skilled in the art to which the present application pertains. It is to be understood that all ranges, amounts, values, and percentages used herein (e.g., to describe amounts of materials, lengths of time, temperatures, operating conditions, ratios of amounts, and the like) are modified by the word "about" unless otherwise specifically indicated. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present specification and attached claims are approximations that may vary depending upon the desired properties. At least these numerical parameters should be construed as the number of significant digits and by applying ordinary rounding techniques. Herein, a numerical range is expressed as from one end point to another end point or between two end points; unless otherwise indicated, all numerical ranges recited herein include endpoints.

Fig. 1 illustrates a block diagram of an integrated circuit processing system 1 according to an embodiment of the present application. In some embodiments, the integrated circuit processing system 1 is configured to perform a developing process on a wafer. In some embodiments, the integrated circuit processing system 1 sprays a liquid onto the wafer.

In certain embodiments, the integrated circuit processing system 1 includes a heating unit 11, a control unit 12, a shower unit 13, and a thermostat unit 14. In some embodiments, the heating unit 11 is configured to heat the developer solution such that the temperature of the developer solution meets process requirements. In some embodiments, the control unit 12 receives the developer solution from the heating unit 11 through the first liquid supply pipe. In some embodiments, the control unit 12 is configured to control the flow rate of the developer solution such that the flow rate of the developer solution meets process requirements. In some embodiments, the spray unit 13 receives the developer solution from the control unit 12 through a second liquid supply pipe. In some embodiments, the spray unit 13 is configured to spray a developer solution onto the wafer. In certain embodiments, the thermostat unit 14 is connected to the heating unit 11, the control unit 12, and the shower unit 13. In certain embodiments, the thermostat unit 14 is configured to maintain the temperature of the developer solution in the first and second supply pipes.

Fig. 2 illustrates a schematic diagram of an integrated circuit processing system 2 according to an embodiment of the present application. In some embodiments, integrated circuit processing system 2 is configured to perform a developing process on wafer WF. In some embodiments, the integrated circuit processing system 2 sprays the liquid WS on the wafer WF. In some embodiments, the liquid WS may be a developer. In some embodiments, the integrated circuit processing system 2 may be used to implement the integrated circuit processing system 1 of the embodiment of fig. 1. In certain embodiments, the integrated circuit processing system 2 includes a heating unit 21, a control unit 22, a shower unit 23, a thermostat unit 24, a first supply tube T1, and a second supply tube T2.

In some embodiments, the heating unit 21 receives the liquid WS from a developer tank (not shown). In some embodiments, the heating unit 21 acts as a developer heating unit to heat the developer to a temperature required for the process. In certain embodiments, the heating unit 21 comprises a heat exchanger for heating the liquid WS by means of a resistive heating wire.

In some embodiments, the first liquid supply tube T1 is connected between the output end 1T21 of the heating unit 21 and the input end 1T22 of the control unit 22. In certain embodiments, the control unit 22 receives the liquid WS from the heating unit 21 through the first liquid supply pipe T1. In some embodiments, the control unit 22 functions as a developer flow rate control unit for controlling the flow rate of the liquid WS. In some embodiments, the control unit 22 adjusts the flow rate of the liquid WS to the flow rate required by the process. In certain embodiments, the control unit 22 comprises a flow meter.

In some embodiments, the second supply tube T2 is connected between the output 2T22 of the control unit 22 and the input 1T23 of the spray unit 23. In certain embodiments, the spraying unit 23 receives the liquid WS from the control unit 22 through the second liquid supply pipe T2. In some embodiments, the spraying unit 23 serves as a developer spraying unit for spraying the liquid WS onto the wafer WF.

In certain embodiments, the thermostat unit 24 is connected to the heating unit 21, the control unit 2, and the shower unit 23. In certain embodiments, the thermostat unit 24 is configured to maintain the temperature of the liquid WS in the first and second liquid supply tubes T1, T2. In certain embodiments, the thermostat unit 24 maintains the temperature of the liquid WS in the first and second liquid supply pipes T1 and T2 at a temperature required for the process. In certain embodiments, the thermostatic unit 24 includes a circulation device 241 and a thermostatic tube 242. In certain embodiments, the circulation device 241 is configured to provide a constant temperature liquid (e.g., warm water) at a fixed temperature.

In certain embodiments, the thermostatic tube 242 is divided into a first section and a second section. In certain embodiments, the first section of thermostatic tube 242 extends from the thermostatic fluid output aperture 1T241 of the circulation device 241, through the output end 1T21 of the heating unit 21, the input end 1T22 of the control unit 22, and back to the thermostatic fluid input aperture 2T241 of the circulation device 241. In certain embodiments, the second section of the thermostatic tube 242 extends from the thermostatic fluid output aperture 1T241 of the circulation device 241, back through the output end 2T22 of the control unit 22, the input end 1T23 of the spray unit 23, and into the thermostatic fluid input aperture 2T241 of the circulation device 241. In certain embodiments, the extended path of the first section of thermostatic tube 242 overlaps with the first supply tube T1, and the first section of thermostatic tube 242 surrounds the first supply tube T1. In certain embodiments, the extended path of the second section of thermostatic tube 242 overlaps with the second supply tube T2, and the second section of thermostatic tube 242 surrounds the second supply tube T2.

Referring to fig. 3, fig. 3 illustrates a cross-sectional view of a thermostatic tube 242 according to an embodiment of the present application. In some embodiments, the cross section of the thermostatic tube 242 is an annular structure surrounding the first liquid supply tube T1 and the second liquid supply tube T2, wherein the embodiment of fig. 3 takes the first liquid supply tube T1 (the diagonally marked area) as an example. It will be appreciated that the portion of the thermostatic tube 242 surrounding the second supply tube T2 can be similarly simulated. In some embodiments, the first supply tube T1 is disposed in the inner ring 301 of the annular structure. In certain embodiments, the thermostated liquid circulates within the ring of the annular structure (punctiform identification area).

In certain embodiments, the circulation device 241 of the thermostatic unit 24 provides circulation delivery of a thermostatic fluid (e.g., thermostatic water) via the thermostatic tube 242. Since the thermostatic tube 242 covers the first liquid supply tube T1 and the second liquid supply tube T2, the thermostatic liquid flowing in the thermostatic tube 242 can keep the heat energy of the liquid WS in the first liquid supply tube T1 and the second liquid supply tube T2 from being lost. In this way, the liquid WS heated to the temperature required by the process by the heating unit 21 can maintain the temperature required by the process after being transferred to the control unit 22 and the spraying unit 23, thereby avoiding deviation of the process conditions and improving the yield of the product.

Fig. 4 illustrates a schematic diagram of an integrated circuit processing system 3 according to an embodiment of the present application. In some embodiments, the integrated circuit processing system 3 is configured to perform a developing process on the wafer WF. In some embodiments, the integrated circuit processing system 3 sprays the liquid WS on the wafer WF. In some embodiments, the integrated circuit processing system 3 may be used to implement the integrated circuit processing system 1 of the embodiment of fig. 1. In some embodiments, integrated circuit process system 3 is substantially identical to integrated circuit process system 2, except for a thermostatic tube 242'. Thus, the same parts of the integrated circuit process system 3 as the integrated circuit process system 2 are omitted here.

In certain embodiments, the thermostatic tube 242' is divided into a first section and a second section. In certain embodiments, the first section of thermostatic tube 242' extends from the thermostatic fluid output aperture 1T241 of the circulation device 241, through the output end 1T21 of the heating unit 21 to the input end 1T22 of the control unit 22. In certain embodiments, the second section 'of the thermostatic tube 242' extends from the input 1T22 of the control unit 22, through the output 2T22 of the control unit 22, the input 1T23 of the spraying unit 23, and back to the thermostatic fluid input aperture 2T241 of the circulation device 241. In certain embodiments, the extended path of the first section of thermostatic tube 242' overlaps with the first supply tube T1, and the first section of thermostatic tube 242 surrounds the first supply tube T1. In certain embodiments, the extended path of the second section of thermostatic tube 242 'overlaps with the second supply tube T2, and the second section of thermostatic tube 242' surrounds the second supply tube T2.

The embodiment of fig. 4 is similar to the embodiment of fig. 2 in that the circulation device 241 provides a constant temperature liquid (e.g., constant temperature water) for circulation delivery via a constant temperature pipe 242'. Since the thermostatic tube 242 'covers the first liquid supply tube T1 and the second liquid supply tube T2, the thermostatic liquid flowing in the thermostatic tube 242' can keep the heat energy of the liquid WS in the first liquid supply tube T1 and the second liquid supply tube T2 from being dissipated. In this way, the liquid WS heated to the temperature required by the process by the heating unit 21 can maintain the temperature required by the process after being transferred to the control unit 22 and the spraying unit 23, thereby avoiding deviation of the process conditions and improving the yield of the product.

It should be noted that, the implementation of the thermostat unit 24 in the embodiment of fig. 2 or fig. 4 is not limited, and it is within the scope of the present application as long as the first liquid supply tube T1 and the second liquid supply tube T2 can be covered at the same time so as to keep the heat energy of the liquid WS in the first liquid supply tube T1 and the second liquid supply tube T2 from being dissipated by the thermostat liquid flowing in the thermostat tube 242'.

As used herein, the terms "approximately," "substantially," and "about" are used to describe and account for minor variations. When used in connection with an event or circumstance, the terms can refer to instances where the event or circumstance occurs precisely and instances where it occurs to the close approximation. As used herein with respect to a given value or range, the term "about" generally means within ±10%, ±5%, ±1% or ±0.5% of the given value or range. Ranges can be expressed herein as from one endpoint to the other endpoint, or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" may refer to two surfaces within a few micrometers (μm) positioned along a same plane, for example, within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm positioned along the same plane. When referring to "substantially" the same value or property, the term may refer to a value that is within ±10%, 5%, 1% or 0.5% of the average value of the values.

As used herein, the terms "approximately," "substantially," and "about" are used to describe and explain minor variations. When used in connection with an event or circumstance, the terms can refer to instances where the event or circumstance occurs precisely and instances where it occurs to the close approximation. For example, when used in conjunction with a numerical value, the term can refer to a range of variation of less than or equal to ±10% of the numerical value, e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two values may be considered to be "substantially" or "about" the same if the difference between the two values is less than or equal to ±10% (e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%) of the average value of the values. For example, "substantially" parallel may refer to a range of angular variation of less than or equal to ±10° relative to 0 °, for example, less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, "substantially" perpendicular may refer to a range of angular variation of less than or equal to ±10° relative to 90 °, for example, less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

For example, two surfaces may be considered to be coplanar or substantially coplanar if the displacement between the two surfaces is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm. A surface may be considered planar or substantially planar if the displacement of the surface relative to the plane between any two points on the surface is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm.

As used herein, the terms "conductive", "conductive (electrically conductive)" and "conductivity" refer to the ability to transfer electrical current. Conductive materials generally indicate those materials that are little or zero opposing to current flow. One measure of conductivity is Siemens per meter (S/m). Typically, the conductive material is one having a conductivity greater than approximately 104S/m (e.g., at least 105S/m or at least 106S/m). The conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

As used herein, the singular terms "a" and "an" may include plural referents unless the context clearly dictates otherwise. In the description of some embodiments, a component provided "on" or "over" another component may encompass the case where the former component is directly on (e.g., in physical contact with) the latter component, as well as the case where one or more intermediate components are located between the former component and the latter component.

As used herein, spatially relative terms such as "below," "lower," "above," "upper," "lower," "left," "right," and the like may be used herein for ease of description to describe one component or feature's relationship to another component or feature as illustrated in the figures. In addition to the orientations depicted in the figures, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present.

The foregoing has outlined features of several embodiments and detailed aspects of the present disclosure. The embodiments described in this disclosure may be readily used as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or obtaining the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure and are susceptible to various changes, substitutions and alterations without departing from the spirit and scope of the present disclosure.

Claims (8)

1. An integrated circuit thermostat unit configured to maintain a temperature of a liquid in a liquid supply tube, comprising:

a circulation device configured to provide a constant temperature liquid at a fixed temperature; and

a thermostatic tube through which the thermostatic liquid circulates, the thermostatic tube surrounding the liquid supply tube; wherein the method comprises the steps of

The liquid supply pipe is connected between the heating unit and the flow control unit, and the constant temperature pipe comprises a first section connected between the output end of the heating unit and the input end of the flow control unit.

2. The integrated circuit thermostat unit of claim 1, wherein the thermostat tube has a cross-section that includes an annular structure, the liquid supply tube being disposed in an inner ring of the annular structure, the thermostat liquid flowing within the inner ring of the annular structure.

3. The integrated circuit thermostat unit of claim 1, wherein the supply tube is further connected between the flow control unit and the shower unit, the thermostat tube including a second section connected between an output of the flow control unit and an input of the shower unit.

4. The integrated circuit thermostat unit of claim 1 wherein the liquid is a developer liquid.

5. An integrated circuit processing system, comprising:

an integrated circuit thermostat unit as claimed in any one of claims 1 to 4.

6. The integrated circuit processing system of claim 5, further comprising:

a heating unit configured to heat the developing solution;

a control unit receiving the developing solution from the heating unit through a first liquid supply pipe, configured to control a flow rate of the developing solution;

and the spraying unit is used for receiving the developing solution from the control unit through a second liquid supply pipe and is configured to spray the developing solution onto a wafer.

7. The integrated circuit processing system of claim 6, wherein the heating unit comprises a heat exchanger that heats the developer solution via a resistance heating wire.

8. The integrated circuit process system of claim 6, wherein the control unit comprises a flow meter.

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