CN218919552U - Laser chip supply type semiconductor laser - Google Patents
Laser chip supply type semiconductor laser Download PDFInfo
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- CN218919552U CN218919552U CN202223125273.8U CN202223125273U CN218919552U CN 218919552 U CN218919552 U CN 218919552U CN 202223125273 U CN202223125273 U CN 202223125273U CN 218919552 U CN218919552 U CN 218919552U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model provides a laser chip supply type semiconductor laser which comprises a laser chip set, a conductive column, an electric connection lead, a lens set, a shell and an output optical fiber. One end of the conductive column is connected with an external power supply, the other end of the conductive column is electrically connected with the laser chip set through the electric connection lead, the conductive column is used for providing electric energy for the laser chip set, when the laser chip set is excited by current, stimulated emission laser beams are generated in a junction plane area, shaping and optimizing of the beams are carried out through the lens set, and finally the beams are transmitted to the output optical fiber. In the laser chip supply type semiconductor laser provided by the utility model, the plurality of laser chips are arranged, so that when one of the laser chips is damaged or power is attenuated, the other laser chips are operated by switching the operation mode, and the continuous and effective operation of a laser radar and the like is ensured.
Description
Technical Field
The utility model relates to the field of lasers, in particular to a semiconductor laser of a supply type laser radar.
Background
The lidar is a radar system that detects a characteristic quantity such as a position, a speed, etc. of a target by emitting a laser beam. In principle, a detection signal (laser beam) is emitted to a target, and then a received signal (target echo) reflected from the target is compared with the emission signal, and after appropriate processing, relevant information of the target, such as parameters of target distance, azimuth, altitude, speed, gesture, even shape and the like, can be obtained, so that targets such as airplanes, missiles and the like are detected, tracked and identified.
The core element in the laser radar transmitter is a semiconductor laser, and a single laser chip is adopted as a light source for laser emission in the current laser transmitter, so that the whole transmitter cannot work normally when the laser chip is damaged.
Therefore, in order to ensure that the lidar transmitter can continue to operate effectively, it is necessary to solve the problem of chip damage in the semiconductor laser.
Disclosure of Invention
The utility model aims to provide a laser chip supply type semiconductor laser which comprises a laser chip set, a conductive column, an electric connection lead, a lens set, a shell and an output optical fiber. One end of the conductive column is connected with an external power supply, the other end of the conductive column is electrically connected with the laser chip set through the electric connection lead, the conductive column is used for providing electric energy for the laser chip set, when the laser chip set is excited by current, stimulated emission laser beams are generated in a junction plane area, shaping and optimizing of the beams are carried out through the lens set, and finally the beams are transmitted to the output optical fiber. The shell comprises a cavity, and the laser chip set, the conductive column, the power connection lead, the lens set and the output optical fiber are arranged in the cavity of the shell.
Specifically, the laser chip set comprises a first chip and a second chip, wherein the first chip comprises a first chip cathode and a first chip anode, and the second chip comprises a second chip cathode and a second chip anode.
The conductive column penetrates through the side wall of the shell, one end of the conductive column is exposed out of the shell, the other end of the conductive column is located in the cavity of the shell, and the conductive column is electrically connected with the first chip and the second chip through the electrical connection lead. The conductive posts include a first conductive post, a second conductive post, and a third conductive post.
The electrical connection leads include a first lead, a second lead, a third lead, and a fourth lead. The first lead is electrically connected with the first chip cathode and one end of the first conductive column in the cavity; the second lead is electrically connected with the positive electrode of the first chip and one end of the second conductive column in the cavity; the third lead is electrically connected with the second chip cathode and one end of the second conductive column in the cavity; the fourth lead is electrically connected with the second chip positive electrode and one end of the third conductive column in the cavity.
Further, the lens group comprises a first fast axis collimating lens, a second fast axis collimating lens, a first slow axis collimating lens, a second slow axis collimating lens, a first reflecting mirror, a second reflecting mirror and a focusing lens.
Specifically, the laser beam generated by the first chip sequentially passes through the first fast axis collimating lens, the first slow axis collimating lens and the first reflecting mirror; the laser beam generated by the second chip sequentially passes through the second fast axis collimating lens, the second slow axis collimating lens and the second reflecting mirror. The two laser beams are finally converged to the focusing lens, and the laser beams are focused by the focusing lens and then transmitted to the output optical fiber.
The cavity bottom of casing is provided with the ladder structure, first fast axis collimating lens first slow axis collimating lens first speculum is located the upper level plane of ladder, second fast axis collimating lens second slow axis collimating lens second speculum and focusing lens are located the lower level plane of ladder, and two laser beams that laser chip produced can belong to respectively on different ladders after passing through first reflection with the second speculum, finally can assemble in focusing lens carries out spotlight back transmission to output optic fibre.
The output optical fiber penetrates through the side wall of the shell, so that one end of the output optical fiber extends to the outside of the shell; the other end of the output optical fiber is positioned in the cavity of the shell and is used for receiving the laser beam generated by the laser chip.
The housing of the present utility model may further include at least one fixing hole provided at an edge portion of the housing, through which the semiconductor laser of the present embodiment may be fixed to the working surface by a fixing member such as a screw.
The laser chip supply type semiconductor laser further comprises a laser output head, wherein the laser output head is sleeved at one end of the output optical fiber extending to the outside of the shell and used for limiting the output direction of a laser beam in the output optical fiber.
Specifically, the shell and the laser output head can be selected from metals with stronger thermal conductivity such as copper and aluminum, the bottom of the cavity of the shell is provided with the laser chip set, so that heat generated in the working process of the laser chip set can be emitted to the outside of the shell, and components such as the laser chip in the shell are protected.
The laser chip set can also consist of at least more than two laser chips, and each laser chip comprises a chip anode and a chip cathode; the conductive posts may further include three or more conductive posts penetrating through a sidewall of the housing; correspondingly, the number of the leads in the corresponding electrical leads and the circuit design mode can be selected according to the number of the laser chips and the conductive struts, so that when a certain laser chip of the semiconductor laser is damaged, other laser chips in the semiconductor laser can normally operate, and the laser radar can continuously and effectively operate.
Further, the laser chip supply type semiconductor laser provided by the utility model comprises three working modes:
mode one:
the third conductive column is externally connected with positive electricity, the second conductive column is externally connected with negative electricity, the first conductive column is not connected with electricity, at the moment, the first chip is not electrified and does not work, the second chip is in a working state, and laser beams are stimulated to generate;
mode two:
the second conductive column is externally connected with positive electricity, the first conductive column is externally connected with negative electricity, the third conductive column is not connected with electricity, at the moment, the second chip is not electrified and does not work, the first chip is in a working state, and laser beams are stimulated to generate;
mode three:
the third conductive column is externally connected with positive electricity, the first conductive column is externally connected with negative electricity, the second conductive column is not connected with electricity, at the moment, the first chip and the second chip are connected in series, the two laser chips work simultaneously, and laser beams are generated through stimulation.
The utility model has the beneficial effects that:
in the laser chip replenishment type semiconductor laser provided by the utility model, a plurality of laser chips are arranged, and when one of the laser chips is damaged or power is attenuated, the other laser chips are operated by switching the operation mode, so that the continuous and effective operation of a laser radar and the like is ensured;
when the continuous working time of a single chip is too long, a large amount of heat can be generated, if the heat cannot be timely emitted from the semiconductor laser, the laser chip and other internal components can be damaged, and the safety problem of the whole semiconductor laser is guaranteed through the switching operation among a plurality of laser chips;
in the laser chip supply type semiconductor laser provided by the utility model, the plurality of laser chips are connected in series, and the generated laser beams are coupled and emitted after passing through the lens group, so that the plurality of laser chips can be connected in series in a mode of reducing current, the power of the whole semiconductor is ensured to be unchanged, and the safety and the service life of the semiconductor laser are improved.
Drawings
Fig. 1 is a schematic diagram of an embodiment of the present utility model.
FIG. 2 is a schematic diagram of a ladder structure according to an embodiment of the present utility model.
Fig. 3 is a circuit schematic of an embodiment of the present utility model.
Fig. 4 is a schematic structural view of an embodiment of the present utility model.
In the figure, 1, a laser chip supply type semiconductor laser; 10. a laser chip set; 101. a first chip; 102. a second chip; 103. a first chip negative electrode; 104. a first chip positive electrode; 105. a second chip negative electrode; 106 a second chip positive electrode 11 and a conductive column; 111. a first conductive pillar; 112. a second conductive post; 113. a third conductive post; 121. a first lead; 122. a second lead; 123. a third lead; 124. a fourth lead; 13. a lens group; 131. a first fast axis collimating lens; 132. a second fast axis collimating lens; 133. a first slow axis collimating lens; 134. a second slow axis collimating lens; 135. a first mirror; 136. a second mirror; 137. a focusing lens; 14. a housing; 141. a fixing hole; 15. an output optical fiber; 16. a laser output head.
Detailed Description
In order to make the objects, technical solutions and advantages of the present utility model more apparent, a laser chip-replenishing semiconductor laser according to the present utility model will be described in further detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
In the description of the present utility model, unless otherwise indicated, the meaning of "a plurality" is two or more; the terms "center," "longitudinal," "transverse," "upper," "lower," "left," "right," "inner," "outer," "front," "rear," "head," "tail," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used as references to orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate description of the utility model and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be configured and operated in a particular orientation, and are not to be construed as limiting the utility model. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, an embodiment of the present application provides a laser chip replenishment type semiconductor laser, which includes a laser chip set 10, a conductive post 11, an electrical connection lead, a lens set 13, a housing 14 and an output optical fiber 15. One end of the conductive post 13 is connected to an external power supply (not shown), and the other end is electrically connected to the laser chip set 10 through the electrical connection lead, so as to provide electrical energy for the laser chip set 10, and when the laser chip set 10 is excited by current, a stimulated emission laser beam is generated in a junction plane area, and is shaped and optimized by the lens set 13, and finally transmitted to the output optical fiber 15. The housing 14 includes a cavity, and the laser chip set 10, the conductive post 11, the electrical connection wire, the lens set 13, and the output optical fiber 15 are disposed in the cavity of the housing 14. The laser beam output by the laser chip supply type semiconductor laser can realize the measurement of parameters such as distance, azimuth, height, speed, gesture, even shape and the like of a target.
Specifically, in the laser chip replenishment type semiconductor laser provided in this embodiment, the laser chip set 10 includes a first chip 101 and a second chip 102, the first chip 101 includes a first chip cathode 103 and a first chip anode 104, and the second chip 102 includes a second chip cathode 105 and a second chip anode 106.
The conductive post 11 penetrates through the side wall of the housing 14 such that one end of the conductive post 11 is exposed to the outside of the housing 14 for connection to an external power source; the other end of the conductive post 11 is located in the cavity of the housing 14, and is electrically connected to the first chip 101 and the second chip 102 through the electrical connection wire, and provides electrical energy for emitting laser beams to the laser chips. The conductive pillars 11 include a first conductive pillar 111, a second conductive pillar 112, and a third conductive pillar 113.
The electrical leads include a first lead 121, a second lead 122, a third lead 123, and a fourth lead 124. The first lead 121 is electrically connected to the first chip cathode 103 and one end of the first conductive pillar 111 in the cavity; the second lead 122 is electrically connected to the first chip positive electrode 104 and one end of the second conductive pillar 112 located in the cavity; the third lead 123 is electrically connected to the second chip cathode 105 and one end of the second conductive pillar 112 located in the cavity; the fourth lead 124 is electrically connected to the second chip positive electrode 106 and the third conductive pillar 113 at one end in the cavity.
The following will explain the working principle of the current-driven laser chip to generate a laser beam in the embodiment of the present application with reference to the connection manner of the circuit of the present embodiment and fig. 3:
mode one:
the third conductive column 113 is externally connected with positive electricity, the second conductive column 112 is externally connected with negative electricity, the first conductive column 111 is not connected with electricity, at the moment, the first chip 101 is not electrified and does not work, the second chip 102 is in a working state, and laser beams are stimulated to generate;
mode two:
the second conductive column 112 is externally connected with positive electricity, the first conductive column 111 is externally connected with negative electricity, the third conductive column 113 is not connected with electricity, at the moment, the second chip 102 is not electrified and does not work, the first chip 101 is in a working state, and laser beams are stimulated to generate;
mode three:
the third conductive column 113 is externally connected with positive electricity, the first conductive column 111 is externally connected with negative electricity, the second conductive column 112 is not connected with electricity, at this time, the first chip 101 and the second chip 102 are connected in series, the two laser chips work simultaneously, and laser beams are stimulated to generate.
Because the laser chip works continuously or under high current in a constant period, the service life of the laser chip is reduced or even damaged, so that the work of the laser radar and the like cannot be normally performed. In the laser chip supply type semiconductor laser provided in the embodiment, a plurality of laser chips are arranged, and when one of the laser chips is damaged or power is attenuated, the operation mode is switched to operate the other laser chips, so that continuous and effective operation of a laser radar and the like is ensured;
when the continuous working time of a single chip is too long, a large amount of heat can be generated, if the heat cannot be timely emitted from the semiconductor laser, the laser chip and other internal components can be damaged, and the safety problem of the whole semiconductor laser is guaranteed through the switching operation among a plurality of laser chips;
in the laser chip supply type semiconductor laser provided in this embodiment, a plurality of laser chips are connected in series, and the generated laser beams are coupled and emitted after passing through the lens group, so that the plurality of laser chips can be connected in series in a mode of reducing current, the power of the whole semiconductor is ensured to be unchanged, and the safety and the service life of the semiconductor laser are improved.
Further, in the present embodiment, the lens group 13 includes a first fast axis collimating lens 131, a second fast axis collimating lens 132, a first slow axis collimating lens 133, a second slow axis collimating lens 134, a first reflecting mirror 135, a second reflecting mirror 136, and a focusing lens 137.
Specifically, the laser beam generated by the first chip 101 sequentially passes through the first fast axis collimating lens 131, the first slow axis collimating lens 133, and the first reflecting mirror 135; the laser beam generated by the second chip 102 passes through the second fast axis collimating lens 132, the second slow axis collimating lens 134, and the second reflecting mirror 136 in sequence. The two laser beams are finally converged to the focusing lens 137, and the laser beams are focused by the focusing lens 137 and then transmitted to the output optical fiber 15.
Referring to fig. 2, in order to reduce interference in the laser beam transmission process inside the semiconductor laser, a stepped structure is disposed at the bottom of the cavity of the housing 14, the first fast axis collimating lens 131, the first slow axis collimating lens 133, and the first reflecting mirror 135 are located at an upper plane of the steps, the second fast axis collimating lens 132, the second slow axis collimating lens 134, the second reflecting mirror 136, and the focusing lens 137 are located at a lower plane of the steps, and two laser beams generated by the laser chip respectively belong to different steps after passing through the first reflecting lens 135 and the second reflecting mirror 136, and finally are converged on the focusing lens 137 to be focused and then transmitted to the output optical fiber 15.
The output optical fiber 15 penetrates through the side wall of the housing 14 such that one end of the output optical fiber 15 extends to the outside of the housing 14; the other end of the output optical fiber 15 is located in the cavity of the housing 14, and is used for receiving the laser beam generated by the laser chip.
Referring to fig. 4, the housing 14 according to the embodiment of the present application may further include at least one fixing hole 141, the fixing hole 141 is disposed at an edge portion of the housing 14, and the semiconductor laser according to the embodiment may be fixed on the working surface through the fixing hole 141 by a fixing member such as a screw.
The laser chip replenishment type semiconductor laser in the embodiment of the present application further includes a laser output head 16, where the laser output head 16 is sleeved at one end of the output optical fiber 15 extending to the outside of the housing 14, and is used for limiting the output direction of the laser beam in the output optical fiber 15.
Specifically, the housing 14 and the laser output head 16 may be made of metal with relatively high thermal conductivity, such as copper, aluminum, etc., and the laser chip set 10 is disposed at the bottom of the cavity of the housing 14, so that heat generated during operation of the laser chip set 10 may be dissipated to the outside of the housing 14, thereby protecting components, such as a laser chip, in the housing 14.
In other embodiments, the laser chip set 10 may further comprise at least two or more laser chips, each of which includes a chip positive electrode and a chip negative electrode; the conductive post 11 may further include three or more conductive posts penetrating through a sidewall of the housing; correspondingly, the number of the leads in the corresponding electrical leads and the circuit design mode can be selected according to the number of the laser chips and the conductive struts, so that when a certain laser chip of the semiconductor laser is damaged, other laser chips in the semiconductor laser can normally operate, and the laser radar can continuously and effectively operate.
The present utility model is not limited to the above-mentioned embodiments, but is intended to be limited to the following embodiments, and any modifications, equivalent changes and variations in the above-mentioned embodiments can be made by those skilled in the art without departing from the scope of the present utility model.
Claims (10)
1. The laser chip supply type semiconductor laser is characterized by comprising a laser chip set, a conductive column, an electric connection lead, a lens set, a shell and an output optical fiber, wherein one end of the conductive column is electrically connected with the laser chip set through the electric connection lead, and laser beams are stimulated to emit by the laser chip set and sequentially pass through the lens set and the output optical fiber;
the shell comprises a cavity, and the laser chip set, the conductive column, the power connection lead, the lens set and the output optical fiber are arranged in the cavity of the shell;
the laser chip set comprises a first chip and a second chip, wherein the first chip comprises a first chip cathode and a first chip anode, and the second chip comprises a second chip cathode and a second chip anode; the conductive posts comprise a first conductive post, a second conductive post and a third conductive post; the electrical connection lead comprises a first lead, a second lead, a third lead and a fourth lead;
the first lead is electrically connected with the first chip cathode and one end of the first conductive column in the cavity; the second lead is electrically connected with the positive electrode of the first chip and one end of the second conductive column in the cavity; the third lead is electrically connected with the second chip cathode and one end of the second conductive column in the cavity; the fourth lead is electrically connected with the second chip positive electrode and one end of the third conductive column in the cavity.
2. The laser chip supplemental semiconductor laser according to claim 1, comprising mode one:
the third conductive column is externally connected with positive electricity, the second conductive column is externally connected with negative electricity, the first conductive column is not connected with electricity, at the moment, the first chip is not electrified and does not work, and the second chip is in a working state.
3. The laser chip supplemental semiconductor laser according to claim 1, comprising mode two:
the second conductive column is externally connected with positive electricity, the first conductive column is externally connected with negative electricity, the third conductive column is not connected with electricity, at the moment, the second chip is not electrified and does not work, and the first chip is in a working state.
4. The laser chip supplemental semiconductor laser according to claim 1, comprising mode three:
the third conductive column is externally connected with positive electricity, the first conductive column is externally connected with negative electricity, the second conductive column is not connected with electricity, and at the moment, the first chip and the second chip are connected in series and work simultaneously.
5. The laser chip supplemental semiconductor laser according to claim 1, wherein the output fiber extends through a sidewall of the housing, one end of the output fiber extending outside the housing; the other end of the output optical fiber is positioned in the cavity of the housing.
6. The semiconductor laser chip supplemental as claimed in any of claims 1-5, wherein the lens group comprises a first fast axis collimating lens, a second fast axis collimating lens, a first slow axis collimating lens, a second slow axis collimating lens, a first mirror, a second mirror, and a focusing lens.
7. The semiconductor laser of claim 6, wherein the laser beam generated by the first chip passes through the first fast axis collimating lens, the first slow axis collimating lens, and the first reflecting mirror in sequence; the laser beam generated by the second chip sequentially passes through the second fast axis collimating lens, the second slow axis collimating lens and the second reflecting mirror; the two laser beams are finally converged to the focusing lens, and the two laser beams are transmitted to the output optical fiber after being focused by the focusing lens.
8. The semiconductor laser of claim 7, wherein the bottom of the cavity of the housing is provided with a stepped structure, the first fast axis collimating lens, the first slow axis collimating lens, the first reflecting mirror are located in an upper plane of the step, and the second fast axis collimating lens, the second slow axis collimating lens, the second reflecting mirror, and the focusing lens are located in a lower plane of the step.
9. The laser chip supplemental semiconductor laser according to claim 8, further comprising a laser output head sleeved on an end of the output fiber extending outside the housing.
10. The semiconductor laser chip supplemental laser according to claim 9, wherein the housing further comprises at least one fixing hole provided at an edge portion of the housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223125273.8U CN218919552U (en) | 2022-11-22 | 2022-11-22 | Laser chip supply type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223125273.8U CN218919552U (en) | 2022-11-22 | 2022-11-22 | Laser chip supply type semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218919552U true CN218919552U (en) | 2023-04-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223125273.8U Active CN218919552U (en) | 2022-11-22 | 2022-11-22 | Laser chip supply type semiconductor laser |
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| CN (1) | CN218919552U (en) |
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- 2022-11-22 CN CN202223125273.8U patent/CN218919552U/en active Active
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