CN218896608U - Solar blind ultraviolet photocathode - Google Patents
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- CN218896608U CN218896608U CN202222660372.XU CN202222660372U CN218896608U CN 218896608 U CN218896608 U CN 218896608U CN 202222660372 U CN202222660372 U CN 202222660372U CN 218896608 U CN218896608 U CN 218896608U
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000002110 nanocone Substances 0.000 claims 1
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- 229910052751 metal Inorganic materials 0.000 description 7
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- 238000000034 method Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
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- 230000003595 spectral effect Effects 0.000 description 1
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Abstract
The utility model discloses a solar blind ultraviolet photocathode. The solar blind ultraviolet photocathode comprises a photocathode substrate, a conductive base layer and a metal compound layer, wherein the photocathode substrate is provided with a nano array structure, the conductive base layer and the metal compound layer are sequentially connected with the nano array structure in an overlapping manner, and the metal compound layer is Cs 2 A Te compound layer. The solar blind ultraviolet photocathode can reduce light loss and improve quantum efficiency of the photocathode.
Description
Technical Field
The utility model relates to the technical field of photoelectricity, in particular to a solar blind ultraviolet photocathode.
Background
The basic structure of the transmission solar blind ultraviolet photocathode is a photocathode substrate/conductive basal layer/Cs 2Te film, and is a photoelectric conversion core element of a 200-280 nm wave band detection and imaging device. In nature, solar blind ultraviolet rays generated in space are absorbed by the ozone layer of the earth's atmosphere, so that ultraviolet rays having wavelengths between 200 and 280 do not exist on the earth's surface. Therefore, the solar blind ultraviolet detector and the imaging device can ignore the interference of solar radiation on the target signal, and the solar blind ultraviolet detector and the imaging device are superior to visible light and infrared detection in aspects of detection target selection, identification and the like; the method has important application in astronomical observation, aerospace, missile early warning, high-voltage corona discharge and other fields. The quantum efficiency is one of the most important technical indexes of the photocathode, but the quantum efficiency of the current commercial transmission solar blind ultraviolet photocathode detection and imaging device is only 15-25%, and the low quantum efficiency severely restricts the application of the solar blind ultraviolet photoelectric device.
Cs in transmission solar blind ultraviolet photocathode 2 Te thin films have extremely poor conductivity, and when an external voltage is applied, photo-generated electrons cannot escape effectively, so that the thin films are required to be formed on a photocathode substrate and Cs 2 The conductive substrate layer is added between Te films, but in the traditional technology, the conductive substrate layer is mainly a Ni-Cr or simple substance Ni semitransparent metal film layer, the transmittance of the semitransparent metal film layer is low, the reflection loss of incident light, the solar blind ultraviolet transmittance is less than 75%, and the quantum efficiency of the photocathode is far less than the theoretical limit value. Although Cs for preparing composite quartz window by using graphene to replace traditional Ni-based semitransparent conductive layer appears in the traditional technology 2 The Te solar blind ultraviolet photocathode mainly aims to solve the problems of low transmittance and high resistivity of a semitransparent metal layer, so that the quantum efficiency is improved, but in practical application, the graphene preparation difficulty is high, most of monocrystalline fragments are piled up to form a polycrystalline film rich in defects, the transfer difficulty is also high, the yield is low, and meanwhile, the combination firmness of the graphene layer and a quartz window and the cleanliness of the surface after transfer are also considered.
Disclosure of Invention
Based on the above, aiming at the problems that the conductive substrate layer in the traditional technology is mainly a Ni-Cr or simple substance Ni semitransparent metal film layer, the semitransparent metal film layer has low transmittance, incident light reflection loss and solar blind ultraviolet transmittance is less than 75%, so that the quantum efficiency is low and the wide application is difficult, the embodiment of the utility model provides a solar blind ultraviolet photocathode. The solar blind ultraviolet photocathode can reduce light loss and improve the quantum efficiency of the photocathode.
The solar blind ultraviolet photocathode comprises a photocathode substrate, a conductive base layer and a metal compound layer, wherein the photocathode substrate is provided with a nano array structure, the conductive base layer and the metal compound layer are sequentially connected with the nano array structure in an overlapping manner, and the metal compound layer is Cs (carbon monoxide) 2 A Te compound layer.
In some of these embodiments, the nanoarray structure comprises one or more of a nanopore pillar array, a hemispherical pore array, a nanobowl array, and an inverted nanotaper array.
In some embodiments, the conductive substrate layer is one or more of an aluminum doped zinc oxide film, an ITO film, an FTO film, and a TCO film.
In some of these embodiments, the entire surface of the photocathode substrate has the nano-array structure.
In some of these embodiments, the photocathode substrate has an area of 1×10 -6 ～1.0m 2 。
In some of these embodiments, the dimension of the nanoarray structure in each direction ranges from 100 to 1000nm.
In some of these embodiments, the thickness of the conductive base layer is 0.1 to 10nm.
In some of these embodiments, the metal compound layer has a thickness of 1 to 100nm.
In some of these embodiments, the photocathode substrate has a thickness of 100 to 1000 μm.
In some of these embodiments, the nanoarray structure is a two-dimensional periodic lattice arrangement.
The solar blind ultraviolet photocathode can reduce light loss and improve quantum efficiency of the photocathode. The solar blind ultraviolet photocathode is used as the most important component of a solar blind ultraviolet detector, and can be applied to the fields of astronomical observation, aerospace, missile early warning, high-voltage corona discharge and the like.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort to a person skilled in the art.
For a more complete understanding of the present application and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings. Wherein like reference numerals refer to like parts throughout the following description.
FIG. 1 is a schematic view of a solar blind UV photocathode according to an embodiment of the present utility model;
FIG. 2 is a schematic side view of a solar blind UV photocathode according to an embodiment of the present utility model;
fig. 3 is a schematic diagram illustrating quantum efficiency curve test performed by a solar blind ultraviolet photocathode according to an embodiment of the present utility model.
Description of the reference numerals
10. Solar blind ultraviolet photocathode; 100. a photocathode substrate; 101. a nano array structure; 200. a conductive base layer; 300. a metal compound layer.
Detailed Description
In order that the above objects, features and advantages of the utility model will be readily understood, a more particular description of the utility model will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The present utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the utility model, whereby the utility model is not limited to the specific embodiments disclosed below.
In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present utility model, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present utility model, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
In the description of the present utility model, the meaning of a number is one or more, the meaning of a number is two or more, and greater than, less than, exceeding, etc. are understood to exclude the present number, and the meaning of a number is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The embodiment of the application provides a solar blind ultraviolet photocathode 10, so as to solve the problems that in the traditional technology, a conductive substrate layer 200 is mainly a Ni-Cr or simple substance Ni semitransparent metal film layer, the transmittance of the semitransparent metal film layer is low, the reflection loss of incident light is low, the solar blind ultraviolet transmittance is less than 75%, the quantum efficiency is low, and the wide application is difficult. The following description will be given with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a solar blind ultraviolet photocathode 10 according to an embodiment of the present application. The solar blind ultraviolet photocathode 10 can be used for photoelectric conversion of 200-280 nm wave band detection and imaging devices.
For a more clear description of the structure of the solar blind uv photocathode 10, the solar blind uv photocathode 10 will be described with reference to the accompanying drawings.
For example, referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a solar blind uv photocathode 10 according to an embodiment of the present application, and fig. 2 is a schematic structural side view of the solar blind uv photocathode 10 according to an embodiment of the present application. A solar blind ultraviolet photocathode 10 comprises a photocathode substrate 100, a conductive base layer 200 and a metal compound layer 300, wherein the photocathode substrate 100 is provided with a nano array structure 101, the conductive base layer 200 and the metal compound layer 300 are sequentially connected with the nano array structure 101 in an overlapping manner, and the metal compound layer 300 is Cs 2 A Te compound layer.
In some of these embodiments, the nanoarray structure 101 includes one or more of a nanopore pillar array, a hemispherical pore array, a nanobowl array, and an inverted nanotaper array.
In some of these embodiments, the method of preparing the nano-array structure 101 includes, but is not limited to, the following: photolithography and plasma etching, nanoimprinting, colloidal crystal etching, and the like.
In some of these embodiments, the conductive substrate layer 200 is one or more of an aluminum doped zinc oxide film, an ITO film, an FTO film, and a TCO film. For example, in one specific example, the conductive base layer 200 is an aluminum-doped zinc oxide film; in another specific example, the conductive base layer 200 is an ITO thin film; in another specific example, the conductive base layer 200 is an FTO film; in another specific example, the conductive base layer 200 is a TCO film.
In some of these embodiments, the entire surface of the photocathode substrate 100 has a nano-array structure 101.
In some of these embodiments, the photocathode substrate 100 has an area of 1×10 -6 ～1.0m 2 。
In some of these embodiments, the dimension of the nanoarray structure in each direction ranges from 100 to 1000nm.
In some of these embodiments, the thickness of the conductive base layer 200 is 0.1 to 10nm. For example, in one specific example, the thickness of the conductive base layer 200 is 0.1nm; in another specific example, the thickness of the conductive base layer 200 is 10nm. It will be appreciated that in other specific examples, the thickness of the conductive base layer 200 may also be 0.5nm, 1nm, 2nm, 3nm, 5nm, 6nm, 8nm, 9nm, or other values.
In some of these embodiments, the thickness of the metal compound layer 300 is 1 to 100nm. For example, in one specific example, the thickness of the metal compound layer 300 is 1nm; in another specific example, the thickness of the metal compound layer 300 is 100nm. It will be appreciated that in other specific examples, the thickness of the metal compound layer 300 may also be 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or other values.
In some of these embodiments, the thickness of the photocathode substrate 100 is 100-1000 μm. For example, in one specific example, the thickness of the photocathode substrate 100 is 100 μm; in another specific example, the thickness of the photocathode substrate 100 is 1000 μm. It will be appreciated that in other specific examples, the thickness of the photocathode substrate 100 can also be 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm or other values.
In some of these embodiments, the nanoarray structure 101 is a two-dimensional periodic lattice arrangement.
The solar blind ultraviolet photocathode 10 can reduce light loss and improve quantum efficiency of the photocathode.
The solar blind ultraviolet photocathode 10 comprises the following steps:
step 1, preparing a nano array structure 101 on a photosensitive surface of a photocathode substrate 100;
step 2, depositing a conductive base layer 200 on the photosensitive surface of the photocathode substrate 100 by utilizing an atomic layer deposition technology; and
step 3, preparing Cs on the photosensitive surface of the photocathode substrate 100 deposited with the conductive base layer 200 by using ultra-high vacuum thermal evaporation technology 2 And (3) preparing the Te compound layer to complete the preparation of the solar blind ultraviolet photocathode 10.
Example 1
The present embodiment provides a solar blind ultraviolet photocathode 10.
The solar blind ultraviolet photocathode 10 of the present embodiment is prepared as follows.
Taking a synthetic quartz window with the diameter of 25mm and the thickness of 6.0mm and the brand of JGS-1 as an example of a photocathode substrate 100, the preparation method of the solar blind ultraviolet photocathode 10 specifically comprises the following steps:
the first step: and manufacturing a Polystyrene (PS) microsphere monolayer film, and processing the microsphere monolayer film by a reactive ion beam etching technology to obtain a plurality of microsphere holes with reasonable sizes on the microsphere monolayer film, wherein the reasonable sizes comprise the diameters of the microsphere holes and the intervals between adjacent microsphere holes.
And a second step of: and (3) imprinting the microsphere monolayer film obtained in the first step on a photosensitive surface of a quartz window, and preparing a plurality of nano-pore columns by photoetching and plasma photoetching technologies to obtain the nano-array structure 101.
And a third step of: an aluminum-doped zinc oxide film is deposited on a quartz window with a nano matrix structure by adopting an atomic layer deposition technology.
Fourth step: preparation of Cs on photosensitive surface of quartz window deposited with deposited aluminum-doped zinc oxide film by ultra-high vacuum thermal evaporation technique 2 Te compound to complete the preparation of solar blind ultraviolet photocathode 10.
The solar blind ultraviolet photocathode 10 manufactured by the method comprises a photocathode substrate 100100, a conductive base layer 200200 and Cs as shown in fig. 1 and 2 2 The Te compound layer 300, wherein the photocathode substrate 100100 has the nano-array structure 101 thereon.
The solar blind ultraviolet photocathode 10 manufactured by the method is subjected to quantum efficiency curve test by using an online spectral response test system, and the test result is shown in fig. 3.
Example 2
The present embodiment provides a solar blind ultraviolet photocathode 10.
The solar blind ultraviolet photocathode 10 of the present embodiment is prepared as follows.
Taking a synthetic quartz window with the diameter of 30mm and the thickness of 8.0mm and the brand of JGS-1 as an example of a photocathode substrate 100, the preparation method of the solar blind ultraviolet photocathode 10 specifically comprises the following steps:
the first step: and manufacturing a Polystyrene (PS) microsphere monolayer film, and processing the microsphere monolayer film by a reactive ion beam etching technology to obtain a plurality of microsphere holes with reasonable sizes on the microsphere monolayer film, wherein the reasonable sizes comprise the diameters of the microsphere holes and the intervals between adjacent microsphere holes.
And a second step of: and (3) imprinting the microsphere monolayer film obtained in the first step on a photosensitive surface of a quartz window, and preparing a plurality of hemispherical holes by a nanoimprint technology to obtain the nano array structure 101.
And a third step of: an aluminum-doped zinc oxide film is deposited on a quartz window with a nano matrix structure by adopting an atomic layer deposition technology.
Fourth step: preparation of Cs on photosensitive surface of quartz window deposited with deposited aluminum-doped zinc oxide film by ultra-high vacuum thermal evaporation technique 2 Te compound to complete the preparation of solar blind ultraviolet photocathode 10.
The solar blind ultraviolet photocathode 10 manufactured by the method comprises a photocathode substrate 100100, a conductive base layer 200200 and Cs as shown in fig. 1 and 2 2 The Te compound layer 300, wherein the photocathode substrate 100100 has the nano-array structure 101 thereon.
In summary, the solar blind ultraviolet photocathode 10 can reduce light loss and improve quantum efficiency of the photocathode. The solar blind ultraviolet photocathode 10 can be used as the most important component of a solar blind ultraviolet detector and can be applied to the fields of astronomical observation, aerospace, missile early warning, high-voltage corona discharge and the like.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the utility model and are described in detail herein without thereby limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.
Claims (10)
1. The solar blind ultraviolet photocathode is characterized by comprising a photocathode substrate, a conductive base layer and a metal compound layer, wherein the photocathode substrate is provided with a nano array structure, the conductive base layer and the metal compound layer are sequentially connected with the nano array structure in an overlapping manner, and the metal compound layer is Cs 2 A Te compound layer.
2. The solar blind ultraviolet photocathode of claim 1, wherein the nano array structure comprises one or more of a nano hole column array, a hemispherical hole array, a nano bowl array and an inverted nano cone array.
3. The solar blind ultraviolet photocathode of claim 1, wherein the conductive substrate layer is one or more of an aluminum doped zinc oxide film, an ITO film, an FTO film and a TCO film.
4. The solar blind ultraviolet photocathode according to any one of claims 1 to 3, wherein the entire surface of the photocathode substrate has the nano array structure.
5. A solar blind ultraviolet photocathode according to any one of claims 1 to 3, wherein the area of the photocathode substrate is 1 x 10 -6 ～1.0m 2 。
6. The solar blind ultraviolet photocathode of any one of claims 1 to 3, wherein the dimension of the nano array structure in each direction ranges from 100nm to 1000nm.
7. A solar blind ultraviolet photocathode according to any one of claims 1 to 3, wherein the thickness of the conductive base layer is 0.1 to 10nm.
8. A solar blind ultraviolet photocathode according to any one of claims 1 to 3, wherein the thickness of the metal compound layer is 1 to 100nm.
9. The solar blind ultraviolet photocathode according to any one of claims 1 to 3, wherein the thickness of the photocathode substrate is 100 to 1000 μm.
10. The solar blind ultraviolet photocathode of any one of claims 1 to 3, wherein the nano array structure is a two-dimensional periodic lattice arrangement.
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| CN202222660372.XU CN218896608U (en) | 2022-10-10 | 2022-10-10 | Solar blind ultraviolet photocathode |
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| CN202222660372.XU CN218896608U (en) | 2022-10-10 | 2022-10-10 | Solar blind ultraviolet photocathode |
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