CN218827106U - Heterogeneous packaging substrate and heterogeneous packaging module - Google Patents

Heterogeneous packaging substrate and heterogeneous packaging module Download PDF

Info

Publication number
CN218827106U
CN218827106U CN202223218262.4U CN202223218262U CN218827106U CN 218827106 U CN218827106 U CN 218827106U CN 202223218262 U CN202223218262 U CN 202223218262U CN 218827106 U CN218827106 U CN 218827106U
Authority
CN
China
Prior art keywords
heterogeneous
layer
metal wiring
glass substrate
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202223218262.4U
Other languages
Chinese (zh)
Inventor
宣凯
郭嘉帅
龙华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Volans Technology Co Ltd
Original Assignee
Shenzhen Volans Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Volans Technology Co Ltd filed Critical Shenzhen Volans Technology Co Ltd
Priority to CN202223218262.4U priority Critical patent/CN218827106U/en
Application granted granted Critical
Publication of CN218827106U publication Critical patent/CN218827106U/en
Priority to PCT/CN2023/126180 priority patent/WO2024114181A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The utility model provides a heterogeneous packaging substrate and a heterogeneous packaging module, wherein the heterogeneous packaging substrate comprises a glass substrate, a heterogeneous layer extended from the glass substrate, a metal column penetrating through the glass substrate and a back metal wiring layer arranged at one side of the glass substrate far away from the heterogeneous layer; the heterogeneous layer comprises a dielectric material layer and a metal wire embedded in the dielectric material layer, wherein the metal wire forms a metal wiring, a passive device and a plurality of bonding pads which are respectively welded with a pin of an external chip and an external connecting wire in the dielectric material layer; the metal wiring comprises N layers, wherein N is a positive integer and is more than or equal to 2; the passive device is made of metal wires by an integrated passive device process, and comprises one or more of a capacitor, an inductor and a resistor; the bonding pad is arranged on one side of the dielectric material layer far away from the glass substrate; the passive device and the bonding pad are electrically connected through a metal wiring; the back metal wiring layer is electrically connected with the metal wiring through the metal posts. Adopt the technical scheme of the utility model's integrated level is high and small.

Description

Heterogeneous packaging substrate and heterogeneous packaging module
Technical Field
The utility model relates to an encapsulation technology field especially relates to a heterogeneous encapsulation base plate and heterogeneous encapsulation module.
Background
At present, the development of mobile communication technology and the coming of the 5G era have greatly increased the complexity and technical difficulty of radio frequency chips of wireless terminals represented by mobile phones, and compared with 4G, the radio frequency chips need to support more frequency bands and perform more complex signal processing, so that the carrier frequency, the communication bandwidth and the connection speed are also significantly improved, the importance of the radio frequency front end in the 5G era is more prominent, and correspondingly, higher requirements are provided for product frameworks, chip materials and processes of core devices. The chip for integrating radio frequency devices made of various materials such as a radio frequency power amplifier, a low noise amplifier, a radio frequency switch, a filter and the like is an important core device.
In the related art, a product using a core device is formed by soldering a chip, a capacitor, an inductor, a resistor and the like on a substrate. The related art substrate is generally an organic-based substrate.
However, the organic substrate of the related art cannot realize a capacitor and a high Q inductor, and further cannot realize a function of an Integrated Passive filter (IPD), and the IPD filter is usually made of any one of a gallium arsenide-based material, a high resistance silicon-based material, and a glass-based material. Therefore, capacitors, inductors, resistors and IPD filters need to be placed at Surface Mounted Devices (SMDs) packaging positions on the substrate, which is not favorable for the current increasingly miniaturized module design due to the high cost and large occupied area. The radio frequency devices of dozens or even dozens of multi-mode multi-frequency integrated on a smaller size are used for generating modules with small size, good economy, high flexibility and better system performance, and the integration of semiconductor devices of different materials into one package is a technical problem to be solved.
Therefore, there is a need for a substrate and a module that solve the above problems.
SUMMERY OF THE UTILITY MODEL
Not enough to above prior art, the utility model provides a heterogeneous encapsulation base plate and heterogeneous encapsulation module that the integrated level is high and small.
In order to solve the technical problem, in a first aspect, an embodiment of the present invention provides a heterogeneous package substrate, which includes a glass substrate, a heterogeneous layer formed on one side of the glass substrate, a metal pillar penetrating through the glass substrate, and a back metal wiring layer disposed on one side of the glass substrate away from the heterogeneous layer; the heterogeneous layer comprises a dielectric material layer attached to the glass substrate and a metal wire embedded in the dielectric material layer, wherein the metal wire forms a metal wiring, a passive device and a plurality of bonding pads which are respectively welded with a pin of an external chip and an external connecting wire in the dielectric material layer; the metal wiring comprises N layers, N is a positive integer and satisfies the requirement, and N is more than or equal to 2; the passive device is formed by integrating the metal wire through a passive device process, and comprises one or more of a capacitor, an inductor and a resistor; the bonding pad is arranged on one side, far away from the glass substrate, of the dielectric material layer; the passive device and the bonding pad are electrically connected through the metal wiring; the back metal wiring layer is electrically connected with the metal wiring through a metal column.
Preferably, at least two of the capacitor, the inductor and the resistor are connected in the dielectric material layer to form a circuit functional module, and the circuit functional module comprises one or more of a radio frequency filter, an impedance matching circuit and a power supply decoupling circuit.
Preferably, the dielectric material layer comprises a plurality of dielectric layers which are sequentially stacked; the metal wiring and the passive device are formed in a plurality of the dielectric layers; the pad is formed in the dielectric layer farthest from the glass substrate and exposed out of the dielectric layer.
Preferably, the back metal wiring layer includes at least one layer.
In a second aspect, the embodiment of the present invention further provides a heterogeneous package module, which includes a chip and the heterogeneous package substrate provided by the embodiment of the present invention, the pin of the chip and the pad welding connection.
Compared with the prior art, the utility model discloses a heterogeneous encapsulation base plate and heterogeneous encapsulation module set up glass substrate and abnormal layer through heterogeneous encapsulation base plate, and heterogeneous layer includes dielectric material layer and metal wire to be in through the metal wire form metal wiring, passive device and a plurality of pad in the dielectric material layer. The utility model discloses a heterogeneous packaging substrate adopts the glass substrate to replace the machine material substrate of correlation technique to with passive matching elements such as electric capacity, inductance, resistance in the inside formation of glass substrate, more save space. The passive device and the bonding pad are electrically connected through the metal wiring, meanwhile, a back metal wiring layer is arranged on one side, away from the heterogeneous layer, of the glass substrate, and the back metal wiring layer is electrically connected with the metal wiring through the metal columns, so that the wiring efficiency of the internal circuit is higher. Consequently, heterogeneous packaging substrate can realize integrated electric capacity, high Q's inductance and resistance through passive device, and rethread metal wiring electricity is connected, thereby integrated IPD filter in the dielectric material layer and impedance matching circuit, radio frequency filter and the power decoupling circuit who realizes the radio frequency circuit the inside satisfy miniaturized heterogeneous encapsulation module design, and the device occupies that the base plate area is little, thereby makes the utility model discloses a heterogeneous packaging substrate and heterogeneous encapsulation module's integrated level is high and small.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a schematic structural diagram of a heterogeneous package substrate according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a heterogeneous package module according to a second embodiment of the present invention.
Detailed Description
The following describes in detail embodiments of the present invention with reference to the drawings.
The embodiments/examples set forth herein are specific embodiments of the present invention and are presented for illustrative purposes only, and are not intended to be construed as limitations on the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include the technical solutions of making any obvious replacement or modification of the embodiments described herein, and all of them are within the scope of the present invention.
(embodiment one)
The utility model provides a heterogeneous packaging substrate 100. Referring to fig. 1, fig. 1 is a schematic structural diagram of a heterogeneous package substrate 100 according to a first embodiment of the present invention.
Specifically, the heterogeneous package substrate 100 includes a glass substrate 1, a heterogeneous layer 2 formed on one side of the glass substrate 1, a metal pillar 3 penetrating through the glass substrate 1, and a back metal wiring layer 4 disposed on one side of the glass substrate 1 far from the heterogeneous layer 2.
Glass substrate 1's insulating nature is better, and the electrical isolation is better, adopts glass substrate 1 can improve the integrated level of device to improve the electrical property of device, radio frequency devices such as especially radio frequency power amplifier, low noise amplifier, radio frequency switch, wave filter, thereby make heterogeneous packaging substrate 100 can be used to 5G communication product.
The heterogeneous layer 2 comprises a dielectric material layer 21 extending along the glass substrate 1 and a metal wire 22 embedded in the dielectric material layer 21.
The dielectric material layer 21 includes a plurality of dielectric layers stacked in sequence.
The metal lines 22 form within the dielectric material layer 21 metal wirings 5, passive devices 6, and a plurality of pads 7 for soldering with pins of an external chip and external wirings, respectively.
The metal wiring 5 is formed in a plurality of the dielectric layers. The metal wiring 5 comprises N layers, N is a positive integer and satisfies, and N is more than or equal to 2.
The passive devices 6 are formed in a plurality of the dielectric layers. The passive device 6 is formed by an integrated passive device process for the metal line 22, and the passive device 6 includes one or more of a capacitor 61, an inductor 62, and a resistor (not shown).
Wherein the capacitor 61 is a MIM capacitor formed by integrating the metal lines 22 on the glass substrate 1 by a passive device process. The MIM capacitor utilizes the capacitance between upper and lower layers of metal, namely a plate capacitor, the lower plate is Mn, the upper plate is Mn +1, and the conventional organic base material substrate cannot realize the capacitor because common Mn and Mn +1 are far away from an oxide layer in a three-dimensional space, so that the capacitance of the manufactured capacitor is not large and cannot be applied. And the capacitance of the MIM capacitor is larger, so that the SMD device welded on the substrate can be replaced.
In one embodiment, at least two of the capacitor 61, the inductor 62 and the resistor are connected in the dielectric material layer 21 to form a circuit functional module 8, and the circuit functional module 8 includes one or more of a radio frequency filter 81, an impedance matching circuit 82 and a power decoupling circuit (not shown). The size of the passive device is fixed relative to the passive device, whether a capacitor or an inductor resistor is welded on the substrate in the related art. For example, 01005 capacitors commonly used in a module have a size of 0.4 x 0.2mm, and a layout area of one capacitor on a substrate is 0.08mm 2 And the capacitance density that can be achieved in a plurality of said dielectric layers is 600pF/mm2. If we want to realize a common capacitance value, such as 2pF, the layout area of the related art surface mount device (SMD device) on the substrate is 0.08mm 2 In the first embodiment, the realization is only 1/300mm2. The traditional SMD placement requires the requirement of space, and can not be close to each other, so that a plurality of SMD devices are placed, the space is calculated, and the layout area is larger; in the first embodiment, the pitch of the passive devices can be as small as 10um, and the layout area is very compact. Preferably, the passive device in the first embodiment may be disposed below the external chip. Thereby making the utility model discloses a heterogeneous packaging substrate 100's integrated level is high and small.
The pad 7 is formed in and exposed to one of the dielectric layers farthest from the glass substrate 1. The bonding pad 7 is arranged on one side of the dielectric material layer 21 far away from the glass substrate 1. And the pins of the external chip and the bonding pads 7 are welded through a bonding wire process or a flip chip packaging process.
The passive component 6 and the pad 7 are electrically connected through the metal wiring 5.
The back metal wiring layer 4 is electrically connected to the metal wiring 5 through a metal post 3. The back metal wiring layer 4 is arranged on the outer surface of the heterogeneous layer 2, so that space can be reasonably utilized, the heterogeneous packaging substrate 100 can be reasonably distributed, and the whole product is small in size.
The back metal wiring layer 4 includes at least one layer. In this embodiment, the back metal wiring layer 4 is a single layer. Of course, without being limited thereto, the back metal wiring layer 4 may be designed to be multi-layered according to design requirements. The metal posts 3 are used for electrically connecting the back metal wiring layer 4 with the metal wirings 5, so that the wiring efficiency of an internal circuit is higher, and the glass substrate 1 can be physically protected by the back metal wiring layer 4 on one side of the back metal wiring layer 4, so that the heterogeneous packaging substrate 100 is higher in reliability.
(second embodiment)
The second embodiment provides a heterogeneous package module 200, where the heterogeneous package module 200 includes a chip 9 and the heterogeneous package substrate 100.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a heterogeneous package module 200 according to a second embodiment of the present invention.
The chip 9 includes a plurality of chips. In the second embodiment, the chip 9 includes a gallium arsenide chip 91 and a silicon-based chip 92. Of course, not limited thereto, the chip 9 may also include Filter chips such as a surface acoustic wave Filter (Saw), a bulk acoustic wave Filter (Baw-SMR Filter, baw) and a film bulk acoustic resonator Filter (FBAR). The utility model discloses a heterogeneous encapsulation module 200 is integrated to an encapsulation with the semiconductor device of different materials in, thereby makes the utility model discloses a heterogeneous encapsulation module 200 integrated level is high, the size is little, economic nature is good, the flexibility is high, system performance is better.
The heterogeneous package module 200 of the second embodiment can implement various implementation manners and corresponding beneficial effects in the first embodiment of the heterogeneous package substrate 100, and for avoiding repetition, details are not repeated here.
It should be noted that the present invention is applicable to all the materials commonly used in the field, including the related glass substrate, the dielectric material layer and the metal wire, and the related glass substrate, the dielectric material layer and the metal wire have indexes and parameters adjusted according to practical applications, and are not described in detail herein.
Compared with the prior art, the utility model discloses a heterogeneous encapsulation base plate and heterogeneous encapsulation module set up glass substrate and abnormal layer through heterogeneous encapsulation base plate, and heterogeneous layer includes dielectric material layer and metal wire to be in through the metal wire form metal wiring, passive device and a plurality of pad in the dielectric material layer. The utility model discloses a heterogeneous packaging substrate adopts the glass substrate to replace the machine material substrate of correlation technique to with passive matching elements such as electric capacity, inductance, resistance in the inside formation of glass substrate, more save space. The passive device and the bonding pad are electrically connected through the metal wiring, meanwhile, a back metal wiring layer is arranged on one side, away from the heterogeneous layer, of the glass substrate, and the back metal wiring layer is electrically connected with the metal wiring through the metal columns, so that the wiring efficiency of the internal circuit is higher. Consequently, heterogeneous packaging substrate can realize integrated electric capacity, high Q's inductance and resistance through passive device, and rethread metal wiring electricity is connected, thereby dielectric material in situ integration IPD wave filter and the impedance matching circuit, the radio frequency filter and the power decoupling circuit that realize the radio frequency circuit the inside satisfy miniaturized heterogeneous encapsulation module design, and the device occupies that the base plate area is little, thereby makes the utility model discloses a heterogeneous packaging substrate and heterogeneous encapsulation module's integrated level is high and small.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and those skilled in the art should understand that modifications or equivalent substitutions made on the present invention without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.

Claims (5)

1. A heterogeneous packaging substrate is characterized in that,
the heterogeneous packaging substrate comprises a glass substrate, a heterogeneous layer formed on one side of the glass substrate, a metal column penetrating through the glass substrate and a back metal wiring layer arranged on one side, far away from the heterogeneous layer, of the glass substrate;
the heterogeneous layer comprises a dielectric material layer attached to the glass substrate and a metal wire embedded in the dielectric material layer, wherein the metal wire forms a metal wiring, a passive device and a plurality of bonding pads which are respectively welded with a pin of an external chip and an external connecting wire in the dielectric material layer;
the metal wiring comprises N layers, N is a positive integer and satisfies the requirement, and N is more than or equal to 2;
the passive device is formed by integrating the metal wire through a passive device process, and comprises one or more of a capacitor, an inductor and a resistor;
the bonding pad is arranged on one side, far away from the glass substrate, of the dielectric material layer;
the passive device and the bonding pad are electrically connected through the metal wiring;
the back metal wiring layer is electrically connected with the metal wiring through a metal column.
2. The heterogeneous package substrate of claim 1, wherein at least two of the capacitor, the inductor, and the resistor are connected within the layer of dielectric material to form a circuit functional module comprising one or more of a radio frequency filter, an impedance matching circuit, and a power decoupling circuit.
3. The heterogeneous package substrate of claim 1, wherein the dielectric material layer comprises a plurality of dielectric layers stacked in sequence; the metal wiring and the passive device are formed in a plurality of the dielectric layers; the pad is formed in the dielectric layer farthest from the glass substrate and exposed out of the dielectric layer.
4. The heterogeneous package substrate of claim 1, wherein the backside metal routing layer comprises at least one layer.
5. A heterogeneous package module comprising a chip, wherein the heterogeneous package module further comprises the heterogeneous package substrate according to any one of claims 1 to 4, and pins of the chip are connected with the bonding pads by welding.
CN202223218262.4U 2022-11-30 2022-11-30 Heterogeneous packaging substrate and heterogeneous packaging module Active CN218827106U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202223218262.4U CN218827106U (en) 2022-11-30 2022-11-30 Heterogeneous packaging substrate and heterogeneous packaging module
PCT/CN2023/126180 WO2024114181A1 (en) 2022-11-30 2023-10-24 Heterogeneous package substrate and heterogeneous package module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202223218262.4U CN218827106U (en) 2022-11-30 2022-11-30 Heterogeneous packaging substrate and heterogeneous packaging module

Publications (1)

Publication Number Publication Date
CN218827106U true CN218827106U (en) 2023-04-07

Family

ID=87251868

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202223218262.4U Active CN218827106U (en) 2022-11-30 2022-11-30 Heterogeneous packaging substrate and heterogeneous packaging module

Country Status (2)

Country Link
CN (1) CN218827106U (en)
WO (1) WO2024114181A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024114181A1 (en) * 2022-11-30 2024-06-06 深圳飞骧科技股份有限公司 Heterogeneous package substrate and heterogeneous package module

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043972A1 (en) * 2005-10-12 2007-04-19 Agency For Science, Technology And Research Device carrying an integrated circuit/components and method of producing the same
US20120190152A1 (en) * 2011-01-25 2012-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for Fabricating Integrated Passive Devices on Glass Substrates
TWI569368B (en) * 2015-03-06 2017-02-01 恆勁科技股份有限公司 Package substrate, package structure including the same, and their fabrication methods
CN206282838U (en) * 2016-11-07 2017-06-27 无锡吉迈微电子有限公司 The integrated encapsulation structure of passive device and active device
CN106653709A (en) * 2016-12-30 2017-05-10 三星半导体(中国)研究开发有限公司 Package and manufacturing thereof
CN218827106U (en) * 2022-11-30 2023-04-07 深圳飞骧科技股份有限公司 Heterogeneous packaging substrate and heterogeneous packaging module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024114181A1 (en) * 2022-11-30 2024-06-06 深圳飞骧科技股份有限公司 Heterogeneous package substrate and heterogeneous package module

Also Published As

Publication number Publication date
WO2024114181A1 (en) 2024-06-06

Similar Documents

Publication Publication Date Title
US10389241B2 (en) Power supply converter and method for manufacturing the same
US8841759B2 (en) Semiconductor package and manufacturing method thereof
JP3612031B2 (en) High frequency module
CN102290329A (en) Semiconductor Device and Method of Forming RF FEM With LC Filter and IPD Filter Over Substrate
KR20030064887A (en) Multiple tier array capacitor and methods of fabrication therefor
JPWO2014171225A1 (en) High frequency component and high frequency module including the same
JP2004296613A (en) Semiconductor device
CN218827106U (en) Heterogeneous packaging substrate and heterogeneous packaging module
CN114267598B (en) Packaging structure and packaging method of radio frequency front-end integrated circuit
US10645798B2 (en) Composite component-embedded circuit board and composite component
CN111740722A (en) Filter and radio frequency communication device
CN209860896U (en) Novel radio frequency front end module based on LTCC technology
KR20030063433A (en) Capacitor with extended surface lands and method of fabrication therefor
CN218827105U (en) High-integration heterogeneous packaging substrate and module
CN111564426A (en) Radio frequency front-end module, radio frequency communication device and electronic equipment
WO2024114183A1 (en) Heterogeneous package substrate and module
WO2002103789A2 (en) Electronic assembly with laterally connected capacitors and manufacturing method
CN114566479A (en) Packaging module, preparation method thereof, base station and electronic equipment
CN101501842B (en) Semiconductor package and manufacturing method thereof
CN212113714U (en) Radio frequency front-end module, radio frequency communication device and electronic equipment
CN115458511A (en) Filter circuit packaging structure and manufacturing method thereof
CN212627826U (en) Filter and radio frequency communication device
CN101174615A (en) Semiconductor device, method for manufacturing semiconductor device, and electric equipment system
US20040251044A1 (en) Ceramic package and fabrication method thereof
CN115050716A (en) High-frequency high-power-density module power supply and manufacturing method thereof

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant