CN218826949U

CN218826949U - High-heat-conductivity silicon wafer loading disc of ion implanter

Info

Publication number: CN218826949U
Application number: CN202223081149.6U
Authority: CN
Inventors: 陈维
Original assignee: Wuxi Kingcore Technology Co ltd
Current assignee: Wuxi Kingcore Technology Co ltd
Priority date: 2022-11-21
Filing date: 2022-11-21
Publication date: 2023-04-07
Anticipated expiration: 2032-11-21

Abstract

The utility model discloses a high heat conduction silicon chip of ion implantation machine loads dish relates to silicon chip and loads dish technical field, and it includes: the silicon wafer loading device comprises a loading disc body, wherein a containing groove is formed in the loading disc body, a silicon wafer body is arranged inside the containing groove, sliding grooves are symmetrically formed in the front portion of the containing groove, a moving channel is formed in each sliding groove, an elastic clamping block is connected to the inside of each sliding groove in a sliding mode, a limiting piece fixedly connected with the moving channel is penetrated through the lower portion of the elastic clamping block, a matching stop block is fixedly connected to the lower portion of the limiting piece, a connecting elastic belt is arranged on the matching stop block, and an installation frame is fixedly connected to the lower surface of the loading disc body. Through mutually supporting of the clamping elastic block, the matching stop block and the clamping spring, the silicon wafer body can be completely clamped, clamping force depends on elastic force of the connecting elastic belt, and the clamping operation is simple and reliable and convenient to use.

Description

High-heat-conductivity silicon wafer loading disc of ion implanter

Technical Field

The utility model relates to a silicon chip loads and coils technical field, in particular to high heat conduction silicon chip of ion implantation machine loads and coils.

Background

The ion implanter needs to load a high-thermal-conductivity silicon wafer by using a loading disc, and the application number is as follows: the Chinese patent of '201920265458.8', the name of which is: "a susceptor for a silicon wafer", comprising: a rotatable turntable; the plurality of slidable clamping blocks are distributed on the turntable and used for clamping the silicon wafer; one end of the clamping block, which is opposite to the center of the turntable, is planar, and a clamping groove for clamping a silicon wafer is formed in one end of the clamping block, which is planar; the manipulator is positioned on one side of the turntable and used for conveying the silicon wafer into an accommodating cavity formed by a plurality of clamping blocks on the turntable; the shape of the clamping groove comprises but is not limited to a V shape, only the manipulator contacts the silicon wafer and no other parts contact the silicon wafer in the whole process of loading the silicon wafer, so that the silicon wafer is not damaged and liquid splashes on the silicon wafer to generate particles; and when the silicon wafer rotates through the turntable, liquid cannot splash onto the silicon wafer through the clamping block to damage the silicon wafer or generate particles, and the silicon wafer clamping device has the characteristics of simple structure, low production cost and high practicability.

However, the silicon wafer has low strength, the excessive clamping force is easy to damage the silicon wafer, the reject ratio in the processing process is increased, and a loading disc which has low clamping force and ensures the integrity of the silicon wafer is lacked.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior art, one of the purposes of the utility model is to provide a high heat conduction silicon chip loading tray of ion implanter through mutually supporting of the centre gripping elasticity piece that sets up, cooperation dog, centre gripping spring, can be with the complete centre gripping of silicon chip body to the clamping-force relies on the elastic force of connecting the elastic webbing, and centre gripping easy operation, reliable, convenient to use.

The utility model discloses an one of the purpose adopts following technical scheme to realize: the utility model provides an ion implantation machine high heat conduction silicon chip loads dish, includes loads the dish body, it is provided with the holding tank on the dish body to load, the inside of holding tank is provided with the silicon chip body, the anterior symmetry of holding tank is provided with the spout, be provided with the transfer passage in the spout, the inside sliding connection of spout has centre gripping elastic block, the lower part of centre gripping elastic block passes transfer passage fixedly connected with restriction piece, the lower part fixedly connected with cooperation dog of restriction piece, be provided with on the cooperation dog and connect the elastic webbing, the lower fixed surface of loading dish body is connected with the installation frame, the anterior sliding connection of installation frame has the slide bar, the anterior fixedly connected with control block of slide bar, the lower surface of loading dish body just is located the inboard fixedly connected with atress piece of installation frame, the slide bar passes the atress piece, and be sliding connection each other, the rear cover that just is located the atress piece on the slide bar is equipped with the centre gripping spring, the rear fixedly connected with go-between ring of slide bar. Through mutually supporting of the clamping elastic block, the matching stop block and the clamping spring, the silicon wafer body can be completely clamped, clamping force depends on elastic force of the connecting elastic belt, and the clamping operation is simple and reliable and convenient to use.

According to the high-heat-conductivity silicon wafer loading disc of the ion implanter, the clamping elastic block is cylindrical.

According to the high-heat-conductivity silicon wafer loading disc of the ion implanter, the connecting ring is positioned in the middle of the connecting elastic belt and fixedly connected with the connecting elastic belt.

The high-heat-conductivity silicon wafer loading disc of the ion implanter is provided, and the clamping elastic block is positioned in front of the silicon wafer body. Used for clamping the silicon wafer body.

According to the high-heat-conductivity silicon wafer loading disc of the ion implanter, the limiting sheet is in contact with the lower surface of the loading disc body. The motion stability of the clamping elastic block is ensured.

According to the high-heat-conductivity silicon wafer loading disc for the ion implanter, the rear part of the accommodating groove is in an arc shape. Used for jointing the silicon wafer body.

According to the high-heat-conductivity silicon wafer loading disc of the ion implanter, the control block is positioned in front of the mounting frame.

According to the high-heat-conductivity silicon wafer loading disc for the ion implanter, the upper surface of the clamping elastic block is flush with the silicon wafer body.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

The present invention will be further described with reference to the accompanying drawings and examples;

fig. 1 is a schematic structural view of a high thermal conductivity silicon wafer loading tray of an ion implanter according to the present invention;

fig. 2 is a schematic view of a partial structure of a lower view angle of a high thermal conductivity silicon wafer loading tray of an ion implanter according to the present invention;

fig. 3 is a front view of the high thermal conductivity silicon wafer loading tray of the ion implanter of the present invention;

fig. 4 is a top view of the high thermal conductivity silicon wafer loading tray of the ion implanter of the present invention.

Illustration of the drawings:

101. a loading tray body; 102. a silicon wafer body; 103. accommodating grooves; 201. clamping the elastic block; 202. a moving channel; 203. a chute; 204. a control block; 205. a slide bar; 206. a stress block; 207. a clamping spring; 208. a connecting ring; 209. connecting an elastic band; 210. a restriction sheet; 211. a mounting frame; 212. and a matched stop block.

Detailed Description

This section will describe in detail the embodiments of the present invention, preferred embodiments of the present invention are shown in the attached drawings, which are used to supplement the description of the text part of the specification with figures, so that one can intuitively and vividly understand each technical feature and the whole technical solution of the present invention, but they cannot be understood as the limitation of the protection scope of the present invention.

Referring to fig. 1-4, the embodiment of the present invention provides a high thermal conductivity silicon wafer loading tray for an ion implanter, which includes a loading tray body 101, wherein a receiving groove 103 is formed on the loading tray body 101, a rear portion of the receiving groove 103 is arc-shaped and is used for attaching to a silicon wafer body 102, the silicon wafer body 102 is disposed inside the receiving groove 103, sliding grooves 203 are symmetrically formed in a front portion of the receiving groove 103, a moving channel 202 is disposed in the sliding groove 203, a clamping elastic block 201 is slidably connected inside the sliding groove 203, an upper surface of the clamping elastic block 201 is flush with the silicon wafer body 102, the clamping elastic block 201 is located in front of the silicon wafer body 102 and is used for clamping the silicon wafer body 102, the clamping elastic block 201 is cylindrical, a lower portion of the clamping elastic block 201 passes through the moving channel 202 and is fixedly connected with a limiting piece 210, the limiting piece 210 is in contact with a lower surface of the loading tray body 101, so as to ensure the stability of the movement of the clamping elastic block 201, a lower portion of the limiting piece 210 is fixedly connected with a matching block 212, a connecting elastic belt is disposed on the matching block 212, which can meet the requirement of the moving channel 202 with a length change, and has a smaller clamping force, and is suitable for a mounting frame 211, which is slidably connected with a front portion 211;

the front part of the sliding rod 205 is fixedly connected with a control block 204, the control block 204 is positioned in front of the mounting frame 211, the lower surface of the loading tray body 101 and the inner side of the mounting frame 211 are fixedly connected with a stress block 206, the sliding rod 205 penetrates through the stress block 206 and are in sliding connection with each other, a clamping spring 207 is sleeved on the sliding rod 205 and positioned behind the stress block 206, a connecting ring 208 is fixedly connected to the rear part of the sliding rod 205, and the connecting ring 208 is positioned in the middle of the connecting elastic belt 209 and is in fixed connection with each other. Through the mutual cooperation of the clamping elastic block 201, the matching stop block 212 and the clamping spring 207, the silicon wafer body 102 can be completely clamped, the clamping force depends on the elastic force of the connecting elastic belt 209, and the clamping operation is simple and reliable and convenient to use.

The working principle is as follows: when the silicon wafer loading device is used for loading, the slide rod 205 is pulled forwards through the control block 204, the slide rod 205 drives the connecting ring 208 to move forwards, the connecting ring 208 drives the connecting elastic belt 209 to move forwards, the connecting elastic belt 209 drives the matching stop block 212, the limiting piece 210 and the clamping elastic block 201 to move, then the silicon wafer body 102 is placed in the accommodating groove 103, the connecting ring 208 and the connecting elastic belt 209 are driven to move backwards under the action of the clamping spring 207, the clamping elastic block 201 is driven to move backwards, the clamping elastic block 201 is matched with the loading disc body 101 to clamp the silicon wafer body 102, the stability of the silicon wafer body 102 is ensured, the clamping force depends on the elastic force of the connecting elastic belt 209, the clamping operation is simple and reliable, and the use is convenient.

The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art.

Claims

1. The high-heat-conductivity silicon wafer loading disc of the ion implanter comprises a loading disc body (101), wherein an accommodating groove (103) is formed in the loading disc body (101), a silicon wafer body (102) is arranged inside the accommodating groove (103), and is characterized in that sliding grooves (203) are symmetrically formed in the front of the accommodating groove (103), a moving channel (202) is formed in the sliding groove (203), a clamping elastic block (201) is slidably connected inside the sliding groove (203), the lower portion of the clamping elastic block (201) penetrates through the moving channel (202) and is fixedly connected with a limiting piece (210), the lower portion of the limiting piece (210) is fixedly connected with a matching stop block (212), a connecting elastic belt (209) is arranged on the matching stop block (212), an installation frame (211) is fixedly connected to the lower surface of the loading disc body (101), a sliding rod (205) is slidably connected to the front portion of the installation frame (211), a control block (204) is fixedly connected to the front portion of the sliding rod (205), a stressed block (206) is fixedly connected to the lower surface of the loading disc body (101) and is located on the inner side of the installation frame (211), the stressed block (206) and is sleeved with a spring (207), a connecting ring (208) is fixedly connected to the rear part of the sliding rod (205).

2. The high thermal conductivity silicon wafer loading tray of the ion implanter according to claim 1, wherein the clamping elastic block (201) is cylindrical in shape.

3. The wafer loading tray of claim 2, wherein the connection ring (208) is located at the middle of the connection elastic belt (209) and is fixedly connected to each other.

4. The high thermal conductivity silicon wafer loading tray of the ion implanter according to claim 3, wherein the clamping elastic block (201) is located in front of the silicon wafer body (102).

5. The high thermal conductivity silicon wafer loading plate of the ion implanter according to claim 4, wherein the limiting plate (210) is in contact with the lower surface of the loading plate body (101).

6. The wafer loading tray of claim 5, wherein the rear portion of the receiving groove (103) is formed in a circular arc shape.

7. The wafer loading tray of claim 6, wherein the control block (204) is located in front of the mounting frame (211).

8. The high thermal conductivity silicon wafer loading tray of the ion implanter according to claim 7, wherein the upper surface of the clamping elastic block (201) is flush with the silicon wafer body (102).