CN218734210U

CN218734210U - Gallium nitride broadband active input matching network

Info

Publication number: CN218734210U
Application number: CN202222626021.7U
Authority: CN
Inventors: 高怀; 王�锋; 丁杰
Original assignee: Suzhou Innotion Tech Co ltd
Current assignee: Suzhou Innotion Tech Co ltd
Priority date: 2022-09-30
Filing date: 2022-09-30
Publication date: 2023-03-24
Anticipated expiration: 2032-09-30

Abstract

The utility model discloses a gallium nitride broadband active input matching network, which comprises a Darlington circuit composed of a transistor Q1 and a transistor Q2, and further comprises an LC matching network, a phase-shifting network N1, N2, N3, a feedback control network and an active phase-shifting network; the LC matching network is connected between the transistor Q1 and the radio frequency input port RFin; the output end of the transistor Q1 is connected with the point A through the phase-shifting network N2 and the output end of the transistor Q2; the reverse transmission signal of the transistor Q2 enters the gallium nitride device after sequentially passing through the active phase-shifting network, the feedback control network and the phase-shifting network N3; the reverse transmission signal of the gallium nitride device enters the input end of the transistor Q1 after sequentially passing through the phase-shifting network N3, the feedback control network and the phase-shifting network N1. The utility model discloses can compromise the input of ultra wide band and match and the function of gallium nitride drive level circuit, improve the flatness of gallium nitride device small-signal gain and big signal gain in ultra wide band operating frequency range simultaneously.

Description

Gallium nitride broadband active input matching network

Technical Field

The utility model relates to a broadband power amplifier field, in particular to active input matching network of gallium nitride broadband.

Background

Wideband power amplifiers are generally defined in terms of relative bandwidth, and relative bandwidths in excess of 15% may be referred to as wideband amplifiers. The third generation semiconductor device gallium nitride has many advantages in a broadband power amplifier, and has design difficulties such as large impedance transformation ratio caused by low input impedance of a transistor, low gain and the need of a driving circuit. Considering from many aspects such as cost, circuit design complexity, multistage LC matches, traditional matching methods such as feedback are difficult to accomplish super bandwidth matching, and the chip area can be obviously increased to distributed matching structure.

The parasitic parameters of the active device are a function of frequency, such as junction capacitance, parasitic inductance of the binder wire, and the like. In addition, the active devices have reverse transmission characteristics, so that in broadband application, the frequency span is large, and the output signals of each stage of circuit cannot be superposed in phase at the output end due to different performances of parasitic parameters at each frequency point, thereby deteriorating various indexes such as efficiency, output power, gain flatness and the like of the circuit. In conclusion, the essence of broadband matching is how to solve the problem of in-phase superposition of amplitude-frequency characteristics.

SUMMERY OF THE UTILITY MODEL

The Darlington composite tube structure has the characteristics of high current gain, high input impedance, large bandwidth and the like, and is commonly used for designing a broadband amplifier. The utility model discloses on darlington circuit structure's basis, provided a gallium nitride power device's active input matching network of broadband, can compromise the input of ultra wide band and match and gallium nitride drive level circuit's function, improve the flatness of gallium nitride device small-signal gain and big signal gain in ultra wide band operating frequency simultaneously.

The technical scheme of the utility model is that:

a kind of gallium nitride broadband active input matching network, including the Darlington circuit that transistor Q1 and transistor Q2 make up, also include LC matching network, phase shift network N1, N2, N3, feedback control network, active phase shift network, wherein:

the LC matching network is connected between the transistor Q1 and the radio frequency input port RFin; the output end of the transistor Q1 is connected with the point A through the phase-shifting network N2 and the output end of the transistor Q2; the point A is connected with the signal input end of the gallium nitride device through a phase-shifting network N3; the reverse transmission signal of the transistor Q2 enters the gallium nitride device after sequentially passing through the active phase-shifting network, the feedback control network and the phase-shifting network N3; the reverse transmission signal of the gallium nitride device enters the input end of the transistor Q1 after sequentially passing through the phase-shifting network N3, the feedback control network and the phase-shifting network N1.

Preferably, the output signal of the transistor Q1 is positively superposed with the input signal of the transistor Q2 at a point a through a phase shifting network N2.

Preferably, the phase shift network N1 overlaps a feedback control network to realize static adjustment of the amplitude-frequency characteristic; the active phase-shifting network is superposed with the feedback control network to realize the dynamic adjustment of the amplitude-frequency characteristic.

Preferably, the transistor Q1 and the transistor Q2 are one of active devices BJT, HBT, FET, or HEMT.

Preferably, the feedback control network is formed by circuit elements with attenuating properties for controlling the strength of the feedback signal.

Preferably, the phase shift network N1, the phase shift network N2, and the phase shift network N3 are formed by combining one or more circuit elements with a phase shift property, where the circuit elements with a phase shift property include capacitors, inductors, resistors, and transmission lines, and the combination form includes series connection and parallel connection.

Preferably, the active phase shift network includes: the active device, the attenuation network and one or more circuit elements with phase-shifting property are combined; the circuit elements with the phase-shifting property comprise capacitors, inductors, resistors and transmission lines, and the combination form comprises series connection and parallel connection.

Preferably, the gallium nitride broadband active input matching network is formed by discrete components, or a part of the network selects the discrete components, a part of the network is made into an integrated circuit on a chip, or all of the network is made into the integrated circuit on the chip.

Preferably, the gallium nitride broadband active input matching network adopts the former two modes, and is packaged into a module form based on the same substrate or is realized based on a PCB substrate.

The utility model has the advantages that:

the utility model discloses on darlington circuit structure's basis, provided a gallium nitride power device's active input matching network of broadband, can compromise the input of ultra wide band and match and gallium nitride drive level circuit's function, improve the flatness of gallium nitride device small-signal gain and big signal gain in ultra wide band operating frequency simultaneously.

Drawings

The invention will be further described with reference to the following drawings and examples:

fig. 1 is a block diagram of the structure of the gallium nitride broadband active input matching network of the present invention;

fig. 2 is an embodiment of a gallium nitride broadband active input matching network.

Detailed Description

As shown in fig. 1, the utility model discloses an active input matching network of gallium nitride broadband, darlington circuit including transistor Q1 and transistor Q2 constitution still includes LC matching network, phase shift network N1, N2, N3, feedback control network, active phase shift network, wherein:

the basic architecture of the Darlington circuit is composed of a transistor Q1 and a transistor Q2 which can be various active devices such as BJT/HBT, FET/HEMT and the like;

the LC matching network is connected between the transistor Q1 and the radio frequency input port RFin, and can adjust the working frequency band, S11 and other performances of the circuit;

the output end of the transistor Q1 is connected with the point A through the phase-shifting network N2 and the output end of the transistor Q2; the output signal of the transistor Q1 is positively superposed with the output signal of the transistor Q2 at the point A through the phase shift network N2, as shown by a loop 1 in FIG. 1;

the point A is connected with the signal input end of the gallium nitride device through a phase-shifting network N3; the reverse transmission signal of the transistor Q2 enters the gallium nitride device after sequentially passing through the active phase-shifting network, the feedback control network and the phase-shifting network N3,

as shown in loop 3 in fig. 1; the dynamic adjustment of the amplitude-frequency characteristic is realized by the active phase-shifting network and the feedback control network;

a reverse transmission signal of the gallium nitride device sequentially passes through the phase-shifting network N3, the feedback control network and the phase-shifting network N1 and then enters the input end of the transistor Q1, as shown by a loop 2 in fig. 1; the phase shift network N1 is superposed with the feedback control network to realize the static adjustment of the amplitude-frequency characteristic.

In the block diagram of the gan broadband active input matching network shown in fig. 1, the feedback control network is generally composed of circuit elements with attenuation properties for controlling the strength of the feedback signal.

The phase shift network N1, the phase shift network N2, and the phase shift network N3 are generally formed by combining one or more circuit elements with phase shift property, where the circuit elements with phase shift property include, but are not limited to, capacitors, inductors, resistors, transmission lines, etc., and the combination form includes, but is not limited to, series-parallel connection, etc.

The active phase shifting network includes: an active device, an attenuation network, and one or more circuit elements having phase shifting properties. The active devices can be BJT/HBT, FET/HEMT and other active devices. The circuit elements with phase shifting properties include, but are not limited to, capacitors, inductors, resistors, transmission lines, etc., and the combination thereof includes, but is not limited to, series-parallel connection, etc.

The gallium nitride broadband active input matching network can be composed of discrete elements, part of the network can select the discrete elements, part of the network can be made into an integrated circuit on a chip, and the whole network can be made into the integrated circuit on the chip. The two former modes are adopted, the module can be packaged into a module form based on the same substrate, and the module can also be realized based on a PCB substrate.

Fig. 2 is an embodiment of a gallium nitride broadband active input matching network, wherein phase offsets of the phase shifting network N1, the phase shifting network N2, and the phase shifting network N3 are θ 1, θ 2, and θ 3, respectively; the active phase-shifting network consists of a second feedback control network, a phase-shifting network N4 and a transistor Q3.

The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All modifications made according to the spirit of the main technical scheme of the present invention shall be covered within the protection scope of the present invention.

Claims

1. A kind of gallium nitride broadband active input matching network, including the Darlington circuit that transistor Q1 and transistor Q2 make up, characterized by, also include LC matching network, phase-shifting network N1, N2, N3, feedback control network, active phase-shifting network, wherein:

the LC matching network is connected between the transistor Q1 and the radio frequency input port RFin; the output end of the transistor Q1 is connected with the output end of the transistor Q2 through the phase-shifting network N2 to a point A; the point A is connected with the signal input end of the gallium nitride device through a phase-shifting network N3; the reverse transmission signal of the transistor Q2 enters the gallium nitride device after sequentially passing through the active phase-shifting network, the feedback control network and the phase-shifting network N3; the reverse transmission signal of the gallium nitride device enters the input end of the transistor Q1 after sequentially passing through the phase-shifting network N3, the feedback control network and the phase-shifting network N1.

2. The gan broadband active input matching network of claim 1, wherein the output signal of the transistor Q1 is forward-added at point a via the phase shifting network N2 and the input signal of the transistor Q2.

3. The gallium nitride broadband active input matching network of claim 2,

the phase shift network N1 is superposed with a feedback control network to realize the static adjustment of the amplitude-frequency characteristic; the active phase-shifting network is superposed with the feedback control network to realize the dynamic adjustment of the amplitude-frequency characteristic.

4. The gan broadband active input matching network of claim 1, wherein the transistors Q1 and Q2 are one of active devices BJT, HBT, FET or HEMT.

5. A gallium nitride broadband active input matching network according to claim 1, wherein said feedback control network is comprised of circuit elements with attenuation properties for controlling the strength of the feedback signal.

6. The GaN broadband active input matching network of claim 1, wherein the phase shifting network N1, the phase shifting network N2 and the phase shifting network N3 are formed by combining one or more circuit elements with phase shifting properties, the circuit elements with phase shifting properties comprise capacitors, inductors, resistors and transmission lines, and the combination form comprises series connection and parallel connection.

7. The gallium nitride broadband active input matching network of claim 1, wherein the active phase shifting network comprises: the active device, the attenuation network and one or more circuit elements with phase-shifting property are combined; the circuit element with the phase-shifting property comprises a capacitor, an inductor, a resistor and a transmission line, and the combination form comprises series connection and parallel connection.

8. The gallium nitride broadband active input matching network of claim 1, wherein the gallium nitride broadband active input matching network is formed of discrete components, or a portion of the network selects discrete components, a portion of the network is formed as an integrated circuit on a chip, or all of the network is formed as an integrated circuit on a chip.

9. The GaN broadband active input matching network of claim 8, wherein the GaN broadband active input matching network is implemented in the former two modes, packaged in a module form on the basis of a same substrate, or implemented on the basis of a PCB substrate.