CN218666410U - Film forming device with top air inlet - Google Patents
Film forming device with top air inlet Download PDFInfo
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- CN218666410U CN218666410U CN202223233833.1U CN202223233833U CN218666410U CN 218666410 U CN218666410 U CN 218666410U CN 202223233833 U CN202223233833 U CN 202223233833U CN 218666410 U CN218666410 U CN 218666410U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a film forming device with top air intake, which relates to the technical field of semiconductor production equipment and comprises an air intake chamber, a reaction chamber and a base; the bottom of the reaction chamber is provided with an exhaust port; a top plate is arranged at the top of the air inlet chamber, and a plurality of nozzles are arranged on the top plate; a cover plate is arranged above the top plate, a plurality of air inlet interfaces are arranged on the cover plate corresponding to the plurality of nozzles, and a sealing element is arranged between the air inlet interfaces and the cover plate. The gas enters the gas inlet chamber through the nozzle, the boss of the gas rectifying plate is opposite to the contact surface of the nozzle, the spread of the gas to other gas nozzles is reduced, the reaction and deposition of the gas inlet end part are inhibited, the gas enters the gas according to the region, and the uniformity in the vertical direction is improved through the rectifying plate with uniformly distributed small through holes. The inner wall of the gas inlet chamber and the sleeve of the reaction chamber are swept by gas, or the reaction gas can be effectively prevented from directly contacting the inner wall by shielding by using a covering piece. The periphery of the air inlet chamber is provided with the cooling jacket, so that the overhigh temperature in the air inlet chamber can be effectively avoided.
Description
Technical Field
The utility model relates to a semiconductor production facility technical field especially relates to a film forming device that top was admitted air.
Background
The film forming device is used for preparing a thin film wafer, the atmosphere environment of normal pressure or negative pressure is kept in the reaction chamber, the wafer rotates along with the base, the thermal field heats the wafer to a preset temperature, and meanwhile, reaction gas is supplied to the surface of the wafer to contact, react and deposit, and a semiconductor thin film is formed through epitaxial growth. The vertical film forming device adopts a vapor phase epitaxial growth mode, has high film forming quality and film forming efficiency, and is widely applied to the semiconductor wafer preparation industry.
For film growth, various process gases, including carbon source, silicon source reaction gas, doping gas and diluent gas, are introduced. The reaction gas mixture or the doping gas reaction can form deposit attached to the end part of the nozzle, the deposit is difficult to remove and prevents the subsequent gas from entering normally, and the formed particles can fall on the surface of the wafer to influence the film forming quality.
Disclosure of Invention
For solving above technical problem, the utility model provides a film forming device that top was admitted air through improving the homogeneity of admitting air to restrain the deposit and generate, prevent that the deposit from adhering to influence the film quality.
In order to achieve the above object, the utility model provides a following scheme:
the utility model provides a film forming device with top air intake, which comprises an air intake chamber, a reaction chamber and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is positioned at the lower part in the reaction chamber and is positioned right below the air inlet chamber; the top of the base is used for supporting a wafer; an exhaust port is formed at the bottom of the reaction chamber; a top plate is arranged at the top of the air inlet chamber, and a plurality of nozzles are arranged on the top plate; a cover plate is arranged above the top plate, a plurality of air inlet interfaces are arranged on the cover plate corresponding to the plurality of nozzles, and a sealing element is arranged between each air inlet interface and the cover plate; and a cooling jacket is arranged on the side wall of the air inlet chamber.
Optionally, a plurality of purge gas inlet flow channels are arranged on the edge of the top plate; the air inlet chamber is internally provided with an air inlet rectifying plate below the top plate, and a plurality of air holes are formed in the air inlet rectifying plate.
Optionally, a cooling interlayer communicated with the cooling jacket is arranged below the top plate, and a plurality of cooling channels are arranged on the cooling interlayer.
Optionally, the cooling interlayer comprises an upper interlayer and a lower interlayer, the upper interlayer is located below the lower interlayer, a plurality of large-diameter cooling flow channels are arranged on the upper interlayer, and a plurality of small-diameter cooling flow channels are arranged on the lower interlayer.
Optionally, roof below is provided with into air and cuts off the cowling panel, be provided with a plurality of air vents that link up on cutting off the cowling panel into air, the air vent with the position of nozzle is corresponding, it is provided with the boss to advance air to cut off the cowling panel upper surface, the boss be used for with the tip of a plurality of nozzles cuts off, avoids the nozzle tip to mix.
Optionally, the air inlet cuts off below the cowling panel and is located be provided with a protection section of thick bamboo on the indoor lateral wall of air inlet.
Optionally, the top plate edge is provided with a plurality of purge inlet flow channels, and the bottoms of the purge inlet flow channels extend to the bottom of the inlet chamber.
Optionally, a guide cover is arranged at the bottom of the plurality of purge inlet flow channels.
Optionally, the roof below is provided with the bilayer and cuts off the radome fairing, the bilayer cuts off the radome fairing and includes and cuts off the layer and cut off the layer down on cutting off the layer on going up, it is provided with a plurality of big latus rectum cooling channels to cut off on the layer down, cut off and be provided with a plurality of little latus rectum cooling channels on the layer down.
Optionally, the upper surface of upper partition layer with partition layer all is provided with the boss down, the boss be used for with the tip of a plurality of nozzles cuts off, avoids the nozzle tip to mix.
The utility model discloses for prior art gain following technological effect:
1. the gas enters the gas inlet chamber through the nozzle, the boss of the gas rectifying plate is opposite to the contact surface of the nozzle, the spread of the gas to other gas nozzles is reduced, the reaction and deposition of the gas inlet end part are inhibited, the gas enters the gas according to the region, and the uniformity in the vertical direction is improved through the rectifying plate with uniformly distributed small through holes.
2. The inner wall of the gas inlet chamber and the sleeve of the reaction chamber are swept by gas, or the reaction gas can be effectively prevented from directly contacting the inner wall by shielding by using a covering piece. The periphery of the air inlet chamber is provided with the cooling jacket, so that the overhigh temperature in the air inlet chamber can be effectively avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of the structural layout of an air inlet chamber and a reaction chamber of a vertical film forming apparatus;
FIG. 2 is a schematic view of the structure of the gas inlet purging and the gas flow regulating plate installed below the nozzle on the inner wall of the gas inlet chamber;
FIG. 3 is a partial enlarged view of the purge gas flow channel at the inner wall of the inlet chamber at A;
FIG. 4 is a schematic view of an open-hole surface structure of a gas rectifying plate;
FIG. 5 is a schematic view of a structure of a double-layer cooling flow channel inside an air inlet chamber for gas rectification;
FIG. 6 is a schematic view of a baffle with a boss structure for gas separation guidance and installation of a wall surface protective cover;
FIG. 7 is a schematic view of an opening surface structure of a gas rectifying plate with a boss;
FIG. 8 is a schematic view of a double-layer flow straightener inside the gas inlet chamber and a reaction chamber sleeve purging structure.
Description of reference numerals: 1. an air intake chamber; 2. a reaction chamber; 3. a thermal insulation layer; 4. a sleeve; 5. a thermal field; 6. a base; 7. an exhaust port; 8. a gas source; 9. closing the valve; 10. a flow meter; 11. an air inlet interface; 12. a seal member; 13. a cover plate; 14. a top plate; 15. a nozzle; 16. a cooling jacket; 17. an intake rectifying plate; 18. purging the gas inlet pipeline; 19. a large-drift-diameter cooling flow channel; 20. a small-bore cooling channel; 21. an air intake partition rectifying plate; 22. a protective cylinder; 23. a boss; 24. a double-layer partition rectifying plate; 25. an air inlet channel; 26. and a guide cover.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The first embodiment is as follows:
as shown in fig. 1 to 4, the present embodiment provides a film forming apparatus with top gas inlet, comprising a gas inlet chamber 1, a reaction chamber 2 and a base 6; the bottom of the air inlet chamber 1 is provided with a reaction chamber 2, and the air inlet chamber 1 is communicated with the reaction chamber 2; the base 6 is positioned at the lower part in the reaction chamber 2, and the base 6 is positioned right below the air inlet chamber 1; the top of the base 6 is used for supporting a wafer; the bottom of the reaction chamber 2 is provided with an exhaust port 7; a top plate 14 is arranged at the top of the air inlet chamber 1, and a plurality of nozzles 15 are arranged on the top plate 14; a cover plate 13 is arranged above the top plate 14, a plurality of air inlet interfaces 11 are arranged on the cover plate 13 corresponding to the plurality of nozzles 15, and a sealing element 12 is arranged between the air inlet interfaces 11 and the cover plate 13; the side wall of the air inlet chamber 1 is provided with a cooling jacket 16.
In this embodiment, a thermal insulation layer 3 is disposed on the top of the reaction chamber 2, a sleeve 4 is disposed on the upper portion of the reaction chamber 2, and a thermal field 5 is disposed between the sleeve 4 and the inner sidewall of the reaction chamber 2.
The air inlet interface 11 is sequentially communicated with the flowmeter 10 and the shutoff valve 9 through pipelines, and air is supplied by the air source 8 through the shutoff valve 9 and the flowmeter 10.
The top plate 14 is provided with a plurality of purge inlet flow channels 18 at its periphery. An air inlet rectifying plate 17 is arranged below the top plate 14 in the air inlet chamber 1, and a plurality of vent holes are formed in the air inlet rectifying plate 17. The inlet fairing 17 is also provided with a plurality of apertures.
One end of the purge inlet flow channel 18 is located at the top of the top plate 14, the other end is located at the bottom of the top plate 14, and the other end of the purge inlet flow channel 18 is located at the edge of the inner side of the inlet chamber 1. More specifically, the other end of the purge gas inlet flow passage 18 is disposed vertically downward, so that the inert gas is purged vertically downward from the gas inlet chamber 1 and the inner wall of the cooling jacket 16, and the reaction deposition is further suppressed by increasing the gas flow rate near the edge.
The gas distribution mode of the gas inlet end is that gas required by reaction is introduced into the central area, and non-reaction gas is introduced into the outer ring to serve as isolation gas, so that the reaction gas is prevented from being diffused to the outer side of the sleeve 4 after being introduced.
Example two:
as shown in FIG. 5, the present embodiment provides a top-loading film forming apparatus, which includes an air inlet chamber 1, a reaction chamber 2, and a susceptor 6; the bottom of the air inlet chamber 1 is provided with a reaction chamber 2, and the air inlet chamber 1 is communicated with the reaction chamber 2; the base 6 is positioned at the lower part in the reaction chamber 2, and the base 6 is positioned right below the air inlet chamber 1; the top of the base 6 is used for supporting a wafer; the bottom of the reaction chamber 2 is provided with an exhaust port 7; a top plate 14 is arranged at the top of the air inlet chamber 1, and a plurality of nozzles 15 are arranged on the top plate 14; a cover plate 13 is arranged above the top plate 14, a plurality of air inlet interfaces 11 are arranged on the cover plate 13 corresponding to the plurality of nozzles 15, and a sealing element 12 is arranged between the air inlet interfaces 11 and the cover plate 13; the side wall of the air inlet chamber 1 is provided with a cooling jacket 16.
In this embodiment, a cooling interlayer is disposed below the top plate 14 and is in communication with the cooling jacket 16, the cooling interlayer includes an upper interlayer and a lower interlayer, the upper interlayer is disposed below the lower interlayer, the upper interlayer is provided with a plurality of large-diameter cooling channels 19, and the lower interlayer is provided with a plurality of small-diameter cooling channels 20.
The upper layer and the lower layer of air passage through holes with different diameters play a role in air inlet rectification, improve the uniformity of air and reduce the influence of temperature, and inhibit the rate of the deposition formed by the reaction of the air in the air inlet chamber 1 to a certain extent.
Example three:
as shown in FIGS. 6 and 7, the present embodiment provides a top-feed film forming apparatus comprising a feed chamber 1, a reaction chamber 2, and a susceptor 6; the bottom of the air inlet chamber 1 is provided with a reaction chamber 2, and the air inlet chamber 1 is communicated with the reaction chamber 2; the base 6 is positioned at the lower part in the reaction chamber 2, and the base 6 is positioned right below the air inlet chamber 1; the top of the base 6 is used for supporting a wafer; the bottom of the reaction chamber 2 is provided with an exhaust port 7; a top plate 14 is arranged at the top of the air inlet chamber 1, and a plurality of nozzles 15 are arranged on the top plate 14; a cover plate 13 is arranged above the top plate 14, a plurality of air inlet interfaces 11 are arranged on the cover plate 13 corresponding to the plurality of nozzles 15, and a sealing element 12 is arranged between the air inlet interfaces 11 and the cover plate 13; the side wall of the air inlet chamber 1 is provided with a cooling jacket 16.
In this embodiment, an air inlet blocking rectifying plate 21 is disposed below the top plate 14, a plurality of through air holes are disposed on the air inlet blocking rectifying plate 21, the positions of the air holes correspond to the positions of the nozzles 15, a boss 23 is disposed on the upper surface of the air inlet blocking rectifying plate 21, and the boss 23 is used for blocking the ends of the nozzles 15 to prevent the ends of the nozzles 15 from mixing.
A protective cylinder 22 is arranged on the inner side wall of the air inlet chamber 1 below the air inlet isolating and rectifying plate 21. The protective cylinder 22 is made of quartz material to prevent the gas in the region from attaching to the inner wall of the cooling jacket 16 after being heated and reacted.
In a more specific embodiment, three circles of annular bosses 23 which are coaxially arranged are arranged on the upper surface of the air inlet partition rectifying plate 21, linear bosses 23 are arranged between the air vents between the middle circle of bosses 23 and the innermost circle of bosses 23, and each air vent is separately partitioned to avoid the end mixing of the nozzles 15. A plurality of small holes are uniformly arranged on the air inlet isolating rectifying plate 21.
Example four:
as shown in FIG. 8, the present embodiment provides a top-loading film forming apparatus, which includes an air inlet chamber 1, a reaction chamber 2, and a susceptor 6; the bottom of the air inlet chamber 1 is provided with a reaction chamber 2, and the air inlet chamber 1 is communicated with the reaction chamber 2; the base 6 is positioned at the lower part in the reaction chamber 2, and the base 6 is positioned right below the air inlet chamber 1; the top of the base 6 is used for supporting a wafer; the bottom of the reaction chamber 2 is provided with an exhaust port 7; a top plate 14 is arranged at the top of the air inlet chamber 1, and a plurality of nozzles 15 are arranged on the top plate 14; a cover plate 13 is arranged above the top plate 14, a plurality of air inlet interfaces 11 are arranged on the cover plate 13 corresponding to the plurality of nozzles 15, and a sealing element 12 is arranged between the air inlet interfaces 11 and the cover plate 13; the side wall of the air inlet chamber 1 is provided with a cooling jacket 16.
In the present embodiment, a plurality of purge inlet flow channels 18 are provided at the edge of the top plate 14, and the bottom of the plurality of purge inlet flow channels 18 extends to the bottom of the inlet chamber 1. The bottoms of the plurality of purge inlet flow channels 18 are provided with guide hoods 26.
A double-layer partition fairing is arranged below the top plate 14 and comprises an upper partition layer and a lower partition layer, a plurality of large-diameter cooling flow channels 19 are arranged on the upper partition layer, and a plurality of small-diameter cooling flow channels 20 are arranged on the lower partition layer. The upper surface of going up partition layer and lower partition layer all is provided with boss 23, and boss 23 is used for cutting off a plurality of nozzles 15's tip, avoids nozzle 15 tip to mix. A plurality of small holes are uniformly formed in the upper partition layer and the lower partition layer respectively.
Raw material gas enters from the central nozzle 15 area of the top plate 14, is separated and dispersed to the separation area of the lower small-drift-diameter cooling runner 20 through the large-drift-diameter cooling runner 19, the gas is not mixed in the process, uniform gas inlet is realized after the gas is guided by uniformly distributed small holes, and the inner wall of the gas inlet chamber 1 is covered by the protective cylinder 22. The cleaning gas enters the cavity along the gas inlet flow passage 25, is uniformly diffused by the guide cover 26 and then blows and sweeps the transition section of the reaction chamber 2 and the gas inlet chamber 1 and the inner wall of the sleeve 4.
It should be noted that, as is apparent to those skilled in the art, the present invention is not limited to the details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (10)
1. The film forming device with top air inlet is characterized by comprising an air inlet chamber, a reaction chamber and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is positioned at the lower part in the reaction chamber and is positioned right below the air inlet chamber; the top of the base is used for supporting a wafer; an exhaust port is formed at the bottom of the reaction chamber;
a top plate is arranged at the top of the air inlet chamber, and a plurality of nozzles are arranged on the top plate; a cover plate is arranged above the top plate, a plurality of air inlet interfaces are arranged on the cover plate corresponding to the plurality of nozzles, and a sealing element is arranged between each air inlet interface and the cover plate;
and a cooling jacket is arranged on the side wall of the air inlet chamber.
2. The top-intake film formation apparatus according to claim 1, wherein the ceiling plate edge is provided with a plurality of purge intake runners;
the air inlet chamber is internally provided with an air inlet rectifying plate below the top plate, and a plurality of air holes are formed in the air inlet rectifying plate.
3. The film forming apparatus with top gas inlet as claimed in claim 1, wherein a cooling partition layer is disposed below the top plate and communicated with the cooling jacket, and a plurality of cooling channels are disposed on the cooling partition layer.
4. The film forming apparatus with top air intake as claimed in claim 3, wherein the cooling partition comprises an upper partition and a lower partition, the upper partition is located below the lower partition, the upper partition is provided with a plurality of large-diameter cooling channels, and the lower partition is provided with a plurality of small-diameter cooling channels.
5. The film forming apparatus of claim 1, wherein an air inlet blocking rectifying plate is provided below the top plate, a plurality of through air holes are provided in the air inlet blocking rectifying plate, the positions of the air holes correspond to the positions of the nozzles, and a boss is provided on an upper surface of the air inlet blocking rectifying plate to block the ends of the nozzles to prevent the nozzle ends from mixing.
6. The film forming apparatus of claim 5, wherein a protective tube is provided below the intake partition baffle plate on an inner wall of the intake chamber.
7. The top-fed film forming apparatus according to claim 1, wherein the top plate edge is provided with a plurality of purge inlet flow channels, and the bottoms of the purge inlet flow channels extend to the bottom of the inlet chamber.
8. The top-feed film formation apparatus according to claim 7, wherein a guide cover is provided at a bottom of the purge gas feed flow passages.
9. The film forming apparatus of claim 7, wherein a double-layer partition fairing is disposed below the top plate, the double-layer partition fairing comprises an upper partition layer and a lower partition layer, the upper partition layer is provided with a plurality of large-diameter cooling channels, and the lower partition layer is provided with a plurality of small-diameter cooling channels.
10. The film forming apparatus of claim 9, wherein the upper surface of each of the upper and lower shielding layers is provided with a protrusion for shielding the end portions of the plurality of nozzles to prevent the nozzle end portions from mixing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223233833.1U CN218666410U (en) | 2022-12-05 | 2022-12-05 | Film forming device with top air inlet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223233833.1U CN218666410U (en) | 2022-12-05 | 2022-12-05 | Film forming device with top air inlet |
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| Publication Number | Publication Date |
|---|---|
| CN218666410U true CN218666410U (en) | 2023-03-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223233833.1U Active CN218666410U (en) | 2022-12-05 | 2022-12-05 | Film forming device with top air inlet |
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| CN (1) | CN218666410U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117089927A (en) * | 2023-10-14 | 2023-11-21 | 芯三代半导体科技(苏州)有限公司 | Gas purging system and purging method of film epitaxy equipment |
-
2022
- 2022-12-05 CN CN202223233833.1U patent/CN218666410U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117089927A (en) * | 2023-10-14 | 2023-11-21 | 芯三代半导体科技(苏州)有限公司 | Gas purging system and purging method of film epitaxy equipment |
| CN117089927B (en) * | 2023-10-14 | 2024-01-23 | 芯三代半导体科技(苏州)有限公司 | Gas purging system and purging method of film epitaxy equipment |
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Address after: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee after: Ningbo Hengpu Technology Co.,Ltd. Address before: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee before: Ningbo Hengpu Vacuum Technology Co.,Ltd. |
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