CN218621044U - Plasma chemical vapor deposition device - Google Patents
Plasma chemical vapor deposition device Download PDFInfo
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- CN218621044U CN218621044U CN202222572483.5U CN202222572483U CN218621044U CN 218621044 U CN218621044 U CN 218621044U CN 202222572483 U CN202222572483 U CN 202222572483U CN 218621044 U CN218621044 U CN 218621044U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a plasma chemical vapor deposition device, which comprises a reaction cavity, a top cover and a carrying platform; the carrying platform is arranged in the reaction cavity and used for carrying the semiconductor structure placed in the reaction cavity; the top cover is covered on the top of the reaction cavity and is provided with a first gas supply channel and a second gas supply channel; one side of the top cover facing the reaction cavity is provided with an air guide unit, the middle part of the air guide unit is provided with an air guide channel, and the air guide channel is communicated with the second air supply channel; one side of the top cover facing the reaction cavity is provided with a gas distribution unit, and the gas distribution unit is covered outside the gas guide unit. The utility model provides a semiconductor construction damage that normal position sculpture leads to, and the inhomogeneous problem that reaches the sculpture degree difference of dielectric layer thickness that leads to of gas distribution.
Description
Technical Field
The utility model relates to a semiconductor manufacturing technical field especially relates to plasma chemical vapor deposition device.
Background
In the integrated circuit manufacturing process, a small-size deep groove exists in a semiconductor structure, and when a dielectric layer deposition process is carried out, the small-size deep groove generates pinch-off and voids when a dielectric layer is grown by adopting plasma enhanced chemical vapor deposition equipment. Under the normal condition, high-density plasma equipment is adopted to carry out vapor deposition and etch the dielectric layer, if NF3 in-situ etching is adopted, the semiconductor structure is easy to damage, and meanwhile, the conditions of different thicknesses and different etching degrees of dielectric layers of all parts in the semiconductor structure are caused due to the uneven distribution of gas in the reaction chamber.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a plasma chemical vapor deposition device is provided to solve the semiconductor structure damage that the normal position sculpture leads to, and the inhomogeneous problem that reaches the sculpture degree difference of dielectric layer thickness that leads to of gas distribution.
In order to solve the above technical problem, according to the utility model discloses an aspect provides a plasma chemical vapor deposition device, include: the reaction device comprises a reaction cavity, a top cover and a carrying platform;
the carrying platform is arranged in the reaction cavity and is used for carrying the semiconductor structure placed in the reaction cavity;
the top cover is covered on the top of the reaction cavity, and a first gas supply channel and a second gas supply channel are arranged on the top cover;
one side of the top cover facing the reaction cavity is provided with an air guide unit, the middle part of the air guide unit is provided with an air guide channel, and the air guide channel is communicated with the second air supply channel;
one side of the top cover, which faces the reaction cavity, is provided with a gas distribution unit, and the gas distribution unit is covered on the outer side of the gas guide unit.
In some embodiments, the first air supply channel is provided in plurality, and the first air supply channel is provided outside the second air supply channel in plurality.
In some embodiments, the diameter of the gas guide unit is gradually increased from the top cover toward the reaction chamber.
In some embodiments, the air guide unit is a trumpet-shaped structure.
In some embodiments, the air guide channel comprises a first channel and a plurality of second channels;
one end of the first channel is connected with the plurality of second air supply channels, one end of the plurality of second channels is connected with the other end of the first channel, and the other end of the plurality of second channels is communicated with the reaction cavity.
In some embodiments, the plurality of second channels are divergent and the plurality of second channels are on the same conical surface.
In some embodiments, the gas distribution unit is provided with a plurality of through holes, so that the gas introduced into the first gas supply channel and the second gas supply channel is uniformly dispersed into the reaction cavity.
In some embodiments, the gas guide unit is connected to the gas distribution unit at a periphery of one end of the gas guide unit facing the reaction chamber, and divides the gas distribution unit into a first part and a second part;
wherein the plurality of through holes of the first part of the air distribution unit are uniformly arranged, and the plurality of through holes of the second part are irregularly arranged.
In some embodiments, an antenna is disposed in the top cover to generate an electromagnetic field in the reaction chamber, so that the gas introduced into the first gas supply channel generates plasma.
In some embodiments, the apparatus is further provided with a vacuum pumping unit, which is communicated with the reaction chamber to pump out the gas in the reaction chamber.
Compared with the prior art, the utility model obvious advantage and beneficial effect have. Borrow by above-mentioned technical scheme, the utility model discloses a plasma chemical vapor deposition device can reach considerable technical advancement and practicality to have the wide use value in industry, it has following advantage at least:
(1) The utility model discloses a plasma chemical vapor deposition device is through setting up first air feed channel and second air feed channel on the top cap for in the vapor deposition process, can realize long-range plasma sculpture, avoided the damage of normal position sculpture to semiconductor structure.
(2) The utility model discloses a gas device is divided in the setting for in vapor deposition and long-range plasma etching process, gas distribution is even more, has guaranteed the homogeneity of dielectric layer deposit and sculpture.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic cross-sectional view of a plasma CVD apparatus according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a top cover according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of the air guide unit and the air distribution unit according to an embodiment of the present invention.
[ description of symbols ]
1: reaction cavity
2: top cover
21: first air supply channel
22: a second gas supply channel
23: air guide unit
231: air guide channel
2311: first channel
2312: the second air guide channel
24: gas distribution unit
241: through hole
242: the first part
243: the second part
3: carrying platform
4: antenna with a shield
5: vacuum pumping unit
Detailed Description
In order to further illustrate the present invention, the following detailed description of an embodiment of a plasma chemical vapor deposition apparatus according to the present invention is provided with reference to the accompanying drawings.
The embodiment of the utility model provides a plasma chemical vapor deposition device, as shown in figure 1, the device includes reaction chamber 1, top cap 2 and microscope carrier 3.
The carrier 3 is disposed in the reaction chamber 1 and is used for carrying a semiconductor structure disposed in the reaction chamber 1. The top cover 2 covers the top of the reaction cavity 1.
Further, the device is also provided with a vacuumizing unit 5, wherein the vacuumizing unit 5 is connected to the bottom of the reaction cavity 1 and communicated with the reaction cavity 1 so as to extract the gas in the reaction cavity 1.
As shown in fig. 2, the top cover 2 is provided with a first gas supply channel 21 and a second gas supply channel 22 for supplying gas for the vapor deposition and etching processes, respectively.
Specifically, the first gas supply channel 21 is used for introducing SiH into the reaction chamber 1 4 、O 2 And Ar to form SiO on the semiconductor structure by vapor deposition 2 A dielectric layer.The second gas supply channel 22 feeds SiO into the reaction chamber 1 2 、N 3+ And F - To pass through F - And etching the formed dielectric layer by ions, and particularly opening the blocked opening of the small-size deep groove on the semiconductor structure in the vapor deposition process, so as to improve the filling capacity of the small-size deep groove.
In an embodiment, an antenna 4 is disposed in the top cover 2, the antenna 4 generates an electromagnetic field in the reaction chamber 1, and the gas introduced from the first gas supply channel 21 generates plasma under the action of the electromagnetic field to form a dielectric layer on the surface of the semiconductor structure.
In one embodiment, as shown in fig. 2, there are one second air supply channel 22 and a plurality of first air supply channels 21, and the plurality of first air supply channels 21 are dispersedly disposed outside the second air supply channel 22.
As shown in fig. 2 and 3, the top cover 2 is further provided with an air guide unit 23, an air guide channel 231 is arranged in the middle of the air guide unit 23, and the air guide channel 231 is communicated with the second air supply channel 22.
Further, as shown in fig. 3, the diameter of the gas guide unit 23 is gradually increased from the top cover 2 to the reaction chamber 1, so that when the gas introduced into the first gas supply channel 21 flows along the outer side of the gas guide unit 23, the gas can dispersedly flow through the structure that the diameter of the gas guide unit 23 is gradually increased toward one end, and the uniformity of the gas introduced into the reaction chamber 1 through the first gas supply channel 21 is further ensured.
Preferably, as shown in fig. 3, the air guide unit 23 has a horn-shaped structure.
In one embodiment, as shown in FIG. 3, the air guide passage 231 provided in the middle of the air guide unit 23 includes a first passage 2311 and a plurality of second passages 2312. One end of the first channel 2311 is connected to the second gas supply channel 22, the other end of the first channel 2311 is connected to one end of the second channels 2312, and the other end of the second channels 2312 is communicated with the reaction chamber 1.
In this embodiment, the gas supplied from the second gas supply passage 22 is finally introduced into the reaction chamber 1 through the plurality of second passages 2312, so that the introduction of the gas is more dispersed, and the uniformity of the dispersion of the gas in the reaction chamber 1 is further ensured.
Preferably, as shown in fig. 3, the plurality of second channels 2312 are divergent, and the plurality of second channels 2312 are located on the same conical surface, so as to ensure that the gas is more dispersed when being introduced into the reaction chamber 1.
As shown in fig. 2, a gas distribution unit 24 is disposed on one side of the top cover 2 facing the reaction chamber 1, the gas distribution unit 24 is covered on the outer side of the gas guide unit 23, and the first gas supply channel 21 is covered therein, so as to disperse the gas introduced into the first gas supply channel 21 and the second gas supply channel 22, and ensure the uniformity of the dispersion of the gas in the reaction chamber 1.
As shown in fig. 2 and 3, the gas distribution unit 24 has a bowl-shaped structure, and a plurality of through holes 241 are provided on the gas distribution unit 24 to uniformly disperse the gas supplied from the first gas supply channel 21 and the second gas supply channel 22 into the reaction chamber 1.
Of course, the air distributing unit 24 may be configured as a honeycomb structure, and the present invention is not limited to the specific shape of the air distributing unit 24.
In one embodiment, as shown in FIG. 3, the gas guide unit 23 is connected to the gas distribution unit 24 at a periphery of one end facing the reaction chamber 1, and the gas distribution unit 24 is divided into a first portion 242 and a second portion 243 by the connection thereof. The through holes 241 of the first portion 242 are uniformly arranged, and the through holes 241 of the second portion 243 are irregularly arranged.
As can be seen from fig. 3, most of the gas introduced into the first gas supply channel 21 flows into the reaction chamber 1 through the through holes 241 of the first portion 242, and in order to make the gas more uniformly dispersed in the reaction chamber 1 and ensure that more plasma is generated by the action of the electromagnetic field, the through holes 241 of the first portion 242 are uniformly arranged. Most of the gas introduced into the second gas supply channel 22 flows into the reaction chamber 1 through the through holes 241 of the second portion 243, and the gas can directly act on the surface of the semiconductor structure to complete etching without electromagnetic field, and the through holes 241 of the second portion 243 are irregularly distributed based on the distribution of the small-sized deep grooves of the semiconductor structure.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and although the present invention has been disclosed with the preferred embodiments, it is not limited to the present invention, and any skilled person in the art can make some modifications or equivalent embodiments without departing from the scope of the present invention, but all the technical matters of the present invention are within the scope of the present invention.
Claims (10)
1. A plasma chemical vapor deposition device is characterized by comprising a reaction cavity, a top cover and a carrying platform;
the carrying platform is arranged in the reaction cavity and is used for carrying the semiconductor structure placed in the reaction cavity;
the top cover is covered on the top of the reaction cavity, and a first gas supply channel and a second gas supply channel are arranged on the top cover;
one side of the top cover facing the reaction cavity is provided with an air guide unit, the middle part of the air guide unit is provided with an air guide channel, and the air guide channel is communicated with the second air supply channel;
one side of the top cover, which faces the reaction cavity, is provided with a gas distribution unit, and the gas distribution unit is covered on the outer side of the gas guide unit.
2. The plasma chemical vapor deposition apparatus according to claim 1, wherein the first gas supply channel is plural, and the plural first gas supply channels are provided outside the second gas supply channel.
3. The plasma chemical vapor deposition apparatus according to claim 2, wherein the gas guide unit has a diameter gradually increasing from the top cover toward the reaction chamber.
4. The plasma chemical vapor deposition apparatus according to claim 3, wherein the gas guiding unit is a horn-shaped structure.
5. A plasma chemical vapor deposition apparatus according to claim 4, wherein the gas guide channel comprises a first channel and a plurality of second channels;
one end of the first channel is connected with the plurality of second air supply channels, one end of the plurality of second channels is connected with the other end of the first channel, and the other end of the plurality of second channels is communicated with the reaction cavity.
6. The plasma chemical vapor deposition apparatus of claim 5, wherein the plurality of second passages are divergent and the plurality of second passages are on a same conical surface.
7. The plasma chemical vapor deposition apparatus according to any one of claims 1 to 6, wherein a plurality of through holes are formed in the gas distribution unit, so that the gas introduced into the first gas supply channel and the second gas supply channel is uniformly dispersed into the reaction chamber.
8. The plasma chemical vapor deposition apparatus according to claim 7, wherein a peripheral edge of one end of the gas guide unit facing the reaction chamber is connected to the gas distribution unit, dividing the gas distribution unit into a first portion and a second portion;
wherein the plurality of through holes of the first part of the air distribution unit are uniformly arranged, and the plurality of through holes of the second part are irregularly arranged.
9. A plasma chemical vapor deposition apparatus as claimed in claim 1, wherein an antenna is disposed in the top cover to generate an electromagnetic field in the reaction chamber, so that the gas introduced into the first gas supply channel generates a plasma.
10. A plasma chemical vapor deposition apparatus as claimed in claim 1, wherein a vacuum pumping unit is further provided and is in communication with the reaction chamber for pumping out the gas from the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222572483.5U CN218621044U (en) | 2022-09-27 | 2022-09-27 | Plasma chemical vapor deposition device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222572483.5U CN218621044U (en) | 2022-09-27 | 2022-09-27 | Plasma chemical vapor deposition device |
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| CN218621044U true CN218621044U (en) | 2023-03-14 |
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| CN202222572483.5U Active CN218621044U (en) | 2022-09-27 | 2022-09-27 | Plasma chemical vapor deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537765A (en) * | 2022-09-27 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | Plasma chemical vapor deposition device and small-size groove filling method |
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2022
- 2022-09-27 CN CN202222572483.5U patent/CN218621044U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537765A (en) * | 2022-09-27 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | Plasma chemical vapor deposition device and small-size groove filling method |
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