CN218585985U - LED module and LED display screen with same - Google Patents

Abstract

The utility model provides a LED module and have its LED display screen, this LED module includes: the PCB comprises a PCB substrate, wherein a connecting circuit is arranged in the PCB substrate, a welding disc groove is arranged on the upper surface of the PCB substrate, a welding flux layer electrically connected with the connecting circuit is arranged on the bottom wall of the welding disc groove, and a reflecting layer is arranged on the side wall of the welding disc groove; the quantum dot wafer, quantum dot wafer include the wafer body and set up the excitation layer at the lower extreme of wafer body, and in the excitation layer embedding welding disk groove, the excitation layer was connected with the solder layer electricity, and the diapire on excitation layer corresponds the solder layer, and the lateral wall on excitation layer corresponds the reflector layer. Through the technical scheme that this application provided, can solve the problem that there is the light leak in the excitation layer of the LED module among the correlation technique.

Description

LED module and LED display screen with same

Technical Field

The utility model relates to a LED display screen technical field particularly, relates to a LED module and have its LED display screen.

Background

With the continuous development of LED display screens, LED display screens have been widely used in various industries, and it is important to reduce the cost of LED modules and ensure the display effect. The quantum dot wafer obtains light rays with different wavelengths by exciting quantum dot materials with different grain diameters through light emitted by the excitation layer, and the quantum dot wafer has the advantages of low price, high color purity and wide display color gamut, so that the quantum dot wafer receives attention of manufacturers in the production of LED modules.

In the related art, the lower end of the quantum dot wafer is provided with the excitation layer, quantum dot materials in different forms are attached to the upper surface of the excitation layer, and the quantum dot materials in different particle sizes and different forms are excited by light emitted by the excitation layer to achieve the effect of displaying different colors.

However, since the quantum dot wafer of the LED module in the related art adopts a flip chip structure, the excitation layer of the quantum dot wafer has a light leakage problem around the quantum dot wafer, so that the display effect of the LED module made of the quantum dot wafer when viewed from the side is affected.

SUMMERY OF THE UTILITY MODEL

The utility model provides a LED module and have its LED display screen to there is the problem of light leak in the excitation layer of the LED module of solving among the correlation technique.

According to the utility model discloses an aspect provides a LED module, and the LED module includes: the PCB comprises a PCB substrate, wherein a connecting circuit is arranged in the PCB substrate, a welding disc groove is arranged on the upper surface of the PCB substrate, a welding flux layer electrically connected with the connecting circuit is arranged on the bottom wall of the welding disc groove, and a reflecting layer is arranged on the side wall of the welding disc groove; the quantum dot wafer, quantum dot wafer include the wafer body and set up the excitation layer at the lower extreme of wafer body, and in the excitation layer embedding welding disk groove, the excitation layer was connected with the solder layer electricity, and the diapire on excitation layer corresponds the solder layer, and the lateral wall on excitation layer corresponds the reflector layer.

Furthermore, the reflecting layer is made of black reflecting glue or black reflecting film.

Further, the thickness of the light reflecting layer is between 5 μm and 30 μm.

Further, the ratio of the depth of the pad groove to the height of the quantum dot wafer is between 0.2 and 0.25; and/or the depth of the pad groove is between 10 μm and 40 μm.

Further, the ratio of the length of the pad groove to the length of the quantum dot wafer is between 1.05 and 1.1; and/or the ratio of the width of the pad trench to the width of the quantum dot wafer is between 1.05 and 1.1.

Furthermore, a conductive metal layer is further arranged on the bottom wall of the bonding pad groove, the upper surface of the conductive metal layer is attached to the lower surface of the solder layer, and the conductive metal layer is electrically connected with the connecting circuit.

Further, the LED module also comprises a conventional wafer, wherein the conventional wafer is arranged on the upper surface of the PCB substrate, and the upper surface of the conventional wafer is flush with the upper surface of the quantum dot wafer.

Further, the excitation layer includes a blue excitation layer.

Furthermore, the upper surface interval of PCB base plate is provided with a plurality of bonding pad grooves, and the LED module includes a plurality of quantum dot wafers, and a plurality of quantum dot wafers one-to-one set up in a plurality of bonding pad grooves.

According to the utility model discloses an on the other hand provides a LED display screen, and the LED display screen includes the above-mentioned LED module that provides.

Use the technical scheme of the utility model, the LED module includes PCB base plate and quantum dot wafer, is connected with the solder layer electricity through the excitation layer with the quantum dot wafer, because the solder layer is connected with interconnecting link electricity for when interconnecting link conveying electricity signal gives the excitation layer, the excitation layer sends the crystal light of exciting light with the crystal body of arousing different materials demonstration different colours. And, set up the welding disc groove through the upper surface at the PCB base plate, the lateral wall in welding disc groove is provided with the reflector layer, with arouse layer embedding welding disc inslot, thereby make when the excitation that the arouse layer sent, can absorb the exciting light that the lateral wall on arouse layer sent through the reflector layer, make the exciting light only arouse crystal body, the lateral wall light leak of avoiding the arouse layer leads to the wafer light that crystal body sent to receive colour interference, thereby guarantee that the color of the wafer light that the quantum dot wafer of LED module sent is clear accurate.

Drawings

The accompanying drawings, which form a part of the present application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:

fig. 1 shows a schematic structural diagram of an LED module provided in an embodiment of the present invention.

Wherein the figures include the following reference numerals:

10. a PCB substrate; 11. a pad groove; 111. welding flux; 112. a light-reflecting layer; 113. a conductive metal layer;

20. a quantum dot wafer; 21. a wafer body; 22. an excitation layer;

30. a conventional wafer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

As shown in fig. 1, the embodiment of the present invention provides an LED module, which includes a PCB substrate 10 and a quantum dot chip 20, a connection circuit is provided in the PCB substrate 10, an upper surface of the PCB substrate 10 is provided with a pad groove 11, a solder layer electrically connected to the connection circuit is provided on a bottom wall of the pad groove 11, a reflective layer 112 is provided on a side wall of the pad groove 11, the quantum dot chip 20 includes a chip body 21 and an excitation layer 22 provided at a lower end of the chip body 21, the excitation layer 22 is embedded in the pad groove 11, the excitation layer 22 is electrically connected to the solder layer, a bottom wall of the excitation layer 22 corresponds to the solder layer, and a side wall of the excitation layer 22 corresponds to the reflective layer 112.

By applying the LED module provided by this embodiment, the LED module includes the PCB substrate 10 and the quantum dot chip 20, the excitation layer 22 of the quantum dot chip 20 is electrically connected to the solder layer, and the solder layer is electrically connected to the connection circuit, so that when the connection circuit transmits an electrical signal to the excitation layer 22, the excitation layer 22 emits an excitation light to excite the chip body 21 made of different materials to display chip lights with different colors. And, through set up pad groove 11 at the upper surface of PCB base plate 10, the lateral wall of pad groove 11 is provided with reflection of light layer 112, with arouse layer 22 embedding pad groove 11 in, thereby make when the excitation that arouse layer 22 sent, can absorb the excitation that arouse layer 22's lateral wall sent through reflection of light layer 112, make the excitation that arouse layer 22 sent only arouse wafer body 21, avoid arousing layer 22's lateral wall light leak to lead to wafer body 21 to send the wafer light to receive the colour interference, thereby guarantee that the color of the wafer light that the quantum dot wafer 20 of LED module sent is clear accurate.

Specifically, the wafer body 21 includes quantum dot material layers, and under the excitation effect of the excitation light emitted from the excitation layer 22, the quantum dot material layers with different particle sizes and different forms can emit wafer light with different wavelengths.

Here, the PCB refers to a Printed Circuit Board (Printed Circuit Board).

It should be noted that embedding the excitation layer 22 in the pad groove 11 means that the excitation layer 22 is disposed in the pad groove 11, and the top surface of the excitation layer 22 is lower than the opening of the pad groove 11, so that the light emitted from the side wall of the excitation layer 22 is completely absorbed by the reflection layer 112, and it is ensured that the wafer light emitted from the wafer body 21 is not interfered by the excitation light. The bottom wall of the excitation layer 22 corresponds to the solder layer, that is, the bottom wall of the excitation layer 22 is attached to the solder layer to achieve electrical connection, or the bottom wall of the excitation layer 22 is electrically connected to the solder layer through other media (for example, pins), and the side wall of the excitation layer 22 corresponds to the reflective layer 112, that is, the side wall of the excitation layer 22 is attached to the side wall of the reflective layer 112, or the side wall of the excitation layer 22 is in clearance fit with the reflective layer 112, so that the excitation light emitted by the excitation layer 22 is used for exciting the wafer body 21 to emit the wafer light, and the excitation light does not directly emit outside the quantum dot wafer 20.

As shown in fig. 1, the solder 111 is melted in the reflow soldering, and the solder 111 forms a solder layer after the reflow soldering is completed.

In this embodiment, the reflective layer 112 is made of black reflective glue or black reflective film. The reflective layer 112 made of the black reflective glue or the black reflective film has the characteristic of absorbing light with various wavelengths, so that when the side wall of the excitation layer 22 emits light, the reflective layer 112 can fully absorb excitation light with various wavelengths emitted by the side wall of the excitation layer 22, and thus the excitation light emitted by the side wall of the excitation layer 22 cannot interfere with the wafer light emitted by the wafer body 21.

In this embodiment, the reflective layer 112 may be made of epoxy or acrylic.

In the present embodiment, the thickness of the light reflecting layer 112 is between 5 μm and 30 μm. With the above size range, the light reflecting layer 112 can fully absorb the excitation light emitted from the side wall of the excitation layer 22, and at the same time, a margin is left for the thermal expansion of the quantum dot chip 20 during the reflow soldering process. On the one hand, avoid the undersize of the thickness of reflector layer 112 (being less than 5 μm), reflector layer 112 is easy to rub and use impaired, thereby make reflector layer 112 can't fully absorb the exciting light that the lateral wall of excitation layer 22 sent, the exciting light that the lateral wall of excitation layer 22 sent causes the interference to the wafer light that wafer body 21 sent, influence the color degree of accuracy of LED module, on the other hand, avoid the oversize of the thickness of reflector layer 112 (being greater than 30 μm), in the in-process of reflow soldering, quantum dot wafer 20 takes place the thermal expansion, quantum dot wafer 20 closely laminates with reflector layer 112, and the laminating force is too big makes quantum dot wafer 20 impaired, influence the yields of LED module.

Specifically, the thickness of the light-reflecting layer 112 may have a size of 5 μm, 15 μm, 20 μm, 25 μm, 30 μm, and any other value between 5 μm and 30 μm.

In the present embodiment, the ratio of the depth of the pad groove 11 to the height of the quantum dot wafer 20 is between 0.2 and 0.25. With the ratio range, the reflection layer 112 can fully absorb the excitation light emitted from the sidewall of the excitation layer 22, and the pad grooves 11 can be prevented from affecting the normal light emission of the wafer body 21. On the one hand, avoid the depth of pad groove 11 and the ratio undersize (be less than 0.2) of quantum dot wafer 20's height, receive the influence of the degree of depth of pad groove 11, the exciting light that arouses the layer 22 lateral wall and send is not enough fully absorbed to reflector layer 112's height, can't guarantee that the wafer light that wafer body 21 sent is not disturbed, thereby influence the color accuracy of LED module, on the other hand, avoid the depth of pad groove 11 and the ratio of quantum dot wafer 20's height too big (be greater than 0.25), receive the influence of the degree of depth of pad groove 11, pad groove 11 is too big to quantum dot wafer 20's shading scope, make the light that wafer body 21 sent receive the sheltering from of pad groove 11, the luminance of LED module reduces.

Specifically, the ratio of the depth of the pad groove 11 to the height of the quantum dot wafer 20 may be 0.2, 0.23, 0.25, and any other value between 0.2 and 0.25.

In the present embodiment, the depth of the pad groove 11 is between 10 μm and 40 μm. With the above size range, the reflection layer 112 can sufficiently absorb the excitation light emitted from the sidewall of the excitation layer 22, and the pad grooves 11 can be prevented from affecting the normal light emission of the wafer body 21. On the one hand, avoid the degree of depth of pad groove 11 undersize (be less than 10 μm), the exciting light that arouses the layer 22 lateral wall and send is not enough fully absorbed to the height of reflector layer 112, can't guarantee that the wafer light that wafer body 21 sent is not disturbed, thereby influence the color accuracy of LED module, on the other hand, avoid the degree of depth of pad groove 11 too big (be greater than 10 μm), pad groove 11 is too big to the shading scope of quantum dot wafer 20, make the light that wafer body 21 sent receive the sheltering from of pad groove 11, the luminous luminance of LED module reduces.

Specifically, the depth of the pad groove 11 may have a size of 10 μm, 20 μm, 30 μm, 40 μm, or any other value between 10 μm and 40 μm.

In the present embodiment, the ratio of the length of the pad groove 11 to the length of the quantum dot wafer 20 is between 1.05 and 1.1. By adopting the ratio range, the solder pad groove 11 has a sufficient limiting effect on the quantum dot wafer 20, and meanwhile, a margin is left for the thermal expansion of the quantum dot wafer 20 in the reflow soldering process. On the one hand, avoid the length of pad groove 11 and the length of quantum dot wafer 20 the ratio undersize (be less than 1.05), in the in-process of reflow soldering, quantum dot wafer 20 takes place thermal expansion, quantum dot wafer 20 closely laminates with the lateral wall of pad groove 11, and too big messenger's quantum dot wafer of laminating power is impaired, influence the yields of LED module, on the other hand, avoid the length of pad groove 11 and the length of quantum dot wafer 20 the ratio oversize (be greater than 1.1), in the in-process of reflow soldering, quantum dot wafer 20 takes place thermal expansion, still there is great clearance between the lateral wall of pad groove 11 and quantum dot wafer 20, the exciting light that the lateral wall of excitation layer 22 sent exposes from this clearance, thereby lead to the wafer light that wafer body 21 sent to receive the colour interference, influence the color accuracy of LED module.

Specifically, the ratio of the length of the pad groove 11 to the length of the quantum dot wafer 20 may be 1.05, 1.07, 1.09, 1.1, and any other value between 1.05 and 1.1.

In the present embodiment, the ratio of the width of the pad groove 11 to the width of the quantum dot wafer 20 is between 1.05 and 1.1. By adopting the above ratio range, the solder pad groove 11 has a sufficient limiting effect on the quantum dot wafer 20, and meanwhile, a margin is left for the thermal expansion of the quantum dot wafer 20 in the reflow soldering process. On the one hand, avoid the width of pad groove 11 and the width of quantum dot wafer 20 the ratio undersize (be less than 1.05), in the in-process of reflow soldering, quantum dot wafer 20 takes place thermal expansion, quantum dot wafer 20 closely laminates with the lateral wall of pad groove 11, and too big messenger's quantum dot wafer of laminating power is impaired, influence the yields of LED module, on the other hand, avoid the width of pad groove 11 and the width of quantum dot wafer 20 the ratio oversize (be greater than 1.1), in the in-process of reflow soldering, quantum dot wafer 20 takes place thermal expansion, still there is great clearance between the lateral wall of pad groove 11 and quantum dot wafer 20, the exciting light that the lateral wall of excitation layer 22 sent exposes from this clearance, thereby lead to the wafer light that wafer body 21 sent to receive the colour interference, influence the color accuracy of LED module.

Specifically, the ratio of the width of the pad groove 11 to the width of the quantum dot wafer 20 may be 1.05, 1.07, 1.09, 1.1, and any other value between 1.05 and 1.1.

As shown in fig. 1, the bottom wall of the pad groove 11 is further provided with a conductive metal layer 113, an upper surface of the conductive metal layer 113 is attached to a lower surface of the solder layer, and the conductive metal layer 113 is electrically connected to the connection line. The connection lines are electrically connected with the conductive metal layer 113, so that after the reflow soldering is finished, the solder forms a solder layer on the conductive metal layer 113, and the solder layer is electrically connected with the excitation layer 22, so that the quantum dot chip 20 is electrically connected with the connection lines of the PCB substrate 10.

Specifically, the conductive metal layer 113 may be made of copper or gold.

As shown in fig. 1, the LED module further includes a conventional wafer 30, the conventional wafer 30 is disposed on the upper surface of the PCB substrate 10, the conventional wafer 30 is electrically connected to the connection lines, and the upper surface of the conventional wafer 30 is flush with the upper surface of the quantum dot wafer 20. Because the quantum dot wafer 20 is higher than a normal wafer in the height dimension by adopting the size on the excitation layer 22, the upper surface of the conventional wafer 30 is flush with the upper surface of the quantum dot wafer 20, so that the surface of the LED module made by mixing the quantum dot wafer 20 and the conventional wafer 30 is flat, and the side-emitting effect of the LED module is good.

Specifically, the bonding pad of the conventional wafer 30 is formed by a part of the upper surface of the PCB substrate 10, the bonding pad of the quantum dot wafer 20 is formed by performing a groove treatment on the PCB substrate 10 to form a bonding pad groove 11, the blue excitation layer of the quantum dot wafer 20 is completely immersed in the bonding pad groove 11, and the upper surface of the quantum dot wafer 20 is ensured to be flush with the upper surface of the conventional wafer 30.

Wherein the conventional wafer 30 is disposed in the bonding pads on the upper surface of the PCB substrate 10, the bonding pads of the conventional wafer 30 are electrically connected to the connection lines, the bottom wall of the bonding pads of the conventional wafer 30 is also covered with a solder layer, and the conventional wafer 30 is electrically connected to the connection lines through the solder layer and the bonding pads of the conventional wafer 30.

In the embodiment, the quantum dot wafer 20 is a red light quantum dot wafer, and the conventional wafer 30 includes a blue light conventional wafer and a green light conventional wafer, and by adopting the selection of the quantum dot wafer 20 and the conventional wafer 30, the cost of the red light quantum dot wafer is low compared with the red light conventional wafer made of gallium nitride, so that the LED module made of the red light quantum dot wafer has the advantage of low cost.

In the present embodiment, the excitation layer 22 includes a blue excitation layer. The blue light of the blue excitation layer excites the quantum dot material layers with different particle sizes and different forms to achieve the effect of displaying green or red.

In this embodiment, a plurality of pad grooves 11 are spaced apart from each other on the upper surface of the PCB substrate 10, the led module includes a plurality of quantum dot chips 20, and the plurality of quantum dot chips 20 are disposed in the plurality of pad grooves 11 in a one-to-one correspondence. By embedding the excitation layer 22 of each quantum dot wafer 20 into one corresponding pad groove 11, excitation light emitted from the side surface of the excitation layer 22 of each quantum dot wafer 20 is absorbed by the reflection layer 112 of the corresponding pad groove 11 of the quantum dot wafer 20, thereby further ensuring the color accuracy of the LED module.

It should be noted that, the plurality of quantum dot wafers 20 are arranged in the plurality of pad grooves 11 in a one-to-one correspondence manner, which means that the excitation layer 22 of each quantum dot wafer 20 is embedded in one pad groove 11 corresponding thereto, and each pad groove 11 accommodates the excitation layer 22 of one quantum dot wafer 20 corresponding thereto.

Another embodiment of the utility model provides a LED display screen, the LED display screen includes the above-mentioned LED module that provides. Therefore, this LED display screen is equally can be through in the excitation layer 22 embedding pad groove 11 with quantum dot wafer 20, thereby when making when excitation layer 22 receives the signal of telecommunication of interconnecting link, through the exciting light that the lateral wall of reflection of light layer 112 absorption excitation layer 22 sent, make the exciting light only excite wafer body 21, the lateral wall light leak of avoiding excitation layer 22 leads to the wafer light that wafer body 21 sent to receive the colour interference, thereby guarantee that the color of the wafer light that quantum dot wafer 20 of LED module sent is clear accurate.

To facilitate understanding of the apparatus provided in this embodiment, the following description is made in conjunction with the processing steps of the apparatus:

(1) Designing a connection circuit of the PCB substrate 10, so that the connection circuit is communicated with the quantum dot wafer 20 and the conventional wafer 30, a pad of the conventional wafer 30 is located on the upper surface of the PCB substrate 10, the pad at the position of the quantum dot wafer 20 is a pad groove 11 formed by performing groove processing on the PCB substrate 10, a blue excitation layer of the quantum dot wafer 20 is completely immersed in the pad groove 11, and the upper surface of the quantum dot wafer 20 is ensured to be flush with the upper surface of the conventional wafer 30, a black reflective glue or a black reflective film is arranged on the side wall of the pad groove 11, and the bottom wall of the pad groove 11 is a conductive metal layer 113;

(2) Using a precision dispenser to dispense solder paste into the pad slot 11 on the PCB substrate 10 and the pad of the conventional wafer 30, wherein the solder paste is one of low-temperature solder paste, medium-temperature solder paste or high-temperature solder paste, and the dispensed solder paste is completely contained in the pad slot 11 or the pad, and in this embodiment, the solder paste is high-temperature solder paste SAC0307;

(3) The method comprises the following steps of sequentially attaching quantum dot wafers 20 with different primary colors to a pad groove 11 coated with tin paste by using a die bonder, wherein the quantum dot wafers 20 are die-bonded in the pad groove 11, then carrying out reflow soldering on an LED module, setting the temperature of a reflow furnace according to actual needs, and arranging inert gas in the reflow furnace, wherein the inert gas can be one of nitrogen, neon, argon and the like, in the embodiment, the inert gas is nitrogen, and the quantum dot wafers 20 and conventional wafers are regularly fixed in the pad groove 11 after reflow soldering;

(4) And carrying out surface packaging, film pasting and cutting processes on the LED module subjected to reflow soldering to obtain the LED module using the quantum dot wafer 20.

In the present embodiment, the wafer size is 0406 specification, the conventional wafer 30 includes a blue conventional wafer and a green conventional wafer, the length, width and thickness of the conventional wafer 30 are 150 μm, 100 μm and 80 μm, respectively, the quantum dot wafer 20 is a blue excited red quantum dot wafer, the length, width and thickness of the quantum dot wafer 20 are 150 μm, 100 μm and 100 μm, respectively, and the length, width and depth of the land groove 11 are 165 μm, 110 μm and 20 μm, respectively.

Red coordinate	x	y
			This example	0.6942	0.3065
Comparative example 1	0.6521	0.2838
			Comparative example 2	0.6915	0.3056

In comparative example 1, the preparation of an LED module using a conventional PCB substrate for a quantum dot wafer includes the following steps:

(1) Designing a PCB substrate of a circuit, wherein the bonding pads are all positioned on the surface of the PCB substrate;

(2) Printing solder paste on the bonding pad by using steel mesh printing;

(3) Fixing wafers with different colors on printed solder paste by using a die bonder, wherein the wafers are a blue light conventional wafer, a green light conventional wafer and a red quantum dot wafer respectively, and then performing reflow soldering in a nitrogen atmosphere to obtain a corresponding LED module;

(4) And (4) carrying out surface packaging and film pasting on the LED module in the step (3), and then carrying out edge cutting to obtain the red quantum dot module of the conventional PCB substrate.

In comparative example 2, LED module preparation of a conventional wafer was performed using a conventional PCB substrate, including the steps of:

(1) Designing a PCB substrate of a circuit, wherein welding pads are all positioned on the surface of the PCB substrate;

(2) Printing solder paste on the bonding pad by using steel mesh printing;

(3) Fixing the wafers with different colors on the printed solder paste by using a die bonder, wherein the wafers are a blue light conventional wafer, a green light conventional wafer and a red conventional wafer respectively, and then performing reflow soldering in a nitrogen atmosphere to obtain a corresponding LED module;

(4) And (4) carrying out surface packaging and film pasting on the LED module in the step (3), and then carrying out edge cutting to obtain the conventional LED module of the normal PCB substrate.

It should be noted that, as is apparent from the above table, the value x of the red coordinate value of comparative example 1 is reduced compared to that of comparative example 2, which indicates that the blue light leakage phenomenon exists in the excitation layer, so that the blue light blue shift phenomenon exists in the red light quantum dot chip excited by the blue light when the chip emits light. Compared with the comparative example 1, the x value of the red coordinate value obtained by the device provided by the embodiment is larger than the x value of the red coordinate value of the comparative example 2, and the y value of the red coordinate value obtained by the device provided by the embodiment is close to the y value of the red coordinate value of the comparative example 2, which shows that the display color gamut of the embodiment is better than that of the comparative example 2, so that the device provided by the embodiment can effectively avoid the problem of blue shift of the light emission of the red quantum dot chip caused by the blue light leakage of the excitation layer, and ensure the color accuracy of the LED module.

The device provided by the embodiment has the following beneficial effects:

(1) The upper surface of the PCB substrate 10 is provided with the pad groove 11, the side wall of the pad groove 11 is provided with the reflecting layer 112, and the exciting layer 22 is embedded into the pad groove 11, so that when the exciting layer 22 receives an electric signal of a connecting circuit, exciting light emitted from the side wall of the exciting layer 22 is absorbed by the reflecting layer 112, the exciting light is only excited on the wafer body 21, the wafer light emitted from the wafer body 21 due to light leakage of the side wall of the exciting layer 22 is prevented from being subjected to color interference, and the color of the wafer light emitted from the quantum dot wafer 20 of the LED module is ensured to be clear and accurate;

(2) The upper surface of the conventional wafer 30 is flush with the upper surface of the quantum dot wafer 20, so that the surface of the LED module made by mixing the quantum dot wafer 20 and the conventional wafer 30 is flat, and the side surface of the LED module has a good light emitting effect;

(3) Since the quantum dot wafer 20 is a red light quantum dot wafer and the conventional wafer 30 includes a blue light conventional wafer and a green light conventional wafer, the red light quantum dot wafer has a low cost compared to a red light conventional wafer made of gallium nitride, so that the LED module made of the red light quantum dot wafer has an advantage of low cost.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. An LED module, characterized in that, LED module includes:

the PCB comprises a PCB substrate (10), wherein a connecting circuit is arranged in the PCB substrate (10), a soldering land groove (11) is formed in the upper surface of the PCB substrate (10), a soldering material layer electrically connected with the connecting circuit is arranged on the bottom wall of the soldering land groove (11), and a reflecting layer (112) is arranged on the side wall of the soldering land groove (11);

the quantum dot wafer (20), the quantum dot wafer (20) include wafer body (21) and set up and be in the excitation layer (22) of the lower extreme of wafer body (21), excitation layer (22) imbed in pad groove (11), excitation layer (22) with the solder layer electricity is connected, the diapire of excitation layer (22) corresponds the solder layer, the lateral wall of excitation layer (22) corresponds reflection of light layer (112).

2. The LED module according to claim 1, wherein the light reflecting layer (112) is made of black reflective glue or black reflective film.

3. The LED module according to claim 1, wherein the thickness of the light reflecting layer (112) is between 5 μm and 30 μm.

4. The LED module of claim 1,

the ratio of the depth of the pad groove (11) to the height of the quantum dot wafer (20) is between 0.2 and 0.25; and/or the presence of a gas in the atmosphere,

the depth of the pad groove (11) is between 10 and 40 μm.

5. The LED module of claim 1,

the ratio of the length of the pad groove (11) to the length of the quantum dot wafer (20) is between 1.05 and 1.1; and/or the presence of a gas in the atmosphere,

the ratio of the width of the pad groove (11) to the width of the quantum dot wafer (20) is between 1.05 and 1.1.

6. The LED module according to claim 1, wherein a conductive metal layer (113) is further disposed on the bottom wall of the pad groove (11), an upper surface of the conductive metal layer (113) is attached to a lower surface of the solder layer, and the conductive metal layer (113) is electrically connected to the connecting traces.

7. The LED module according to claim 1, further comprising a conventional wafer (30), wherein the conventional wafer (30) is disposed on the upper surface of the PCB substrate (10), and the upper surface of the conventional wafer (30) is flush with the upper surface of the quantum dot wafer (20).

8. The LED module of claim 1, wherein the excitation layer (22) comprises a blue excitation layer.

9. The LED module according to claim 1, wherein a plurality of the pad grooves (11) are arranged on the upper surface of the PCB substrate (10) at intervals, the LED module comprises a plurality of the quantum dot wafers (20), and the plurality of the quantum dot wafers (20) are arranged in the plurality of pad grooves (11) in a one-to-one correspondence manner.

10. An LED display screen, characterized in that the LED display screen comprises the LED module set of any one of claims 1 to 9.

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