CN218491886U - Device for correcting dose difference of ion implantation target disc - Google Patents

Abstract

The application provides a correct ion implantation target disc dosage difference's device, the device includes: the target disc is provided with a plurality of target positions, and the target positions are used for arranging wafers; the target disc rotating driving component is arranged on one side of the target disc, and an output shaft is in driving connection with the target disc so as to rotate the target disc; and the wafer driving components are fixedly arranged on one side of the target disc, positioned on the back of the corresponding target position and provided with output shafts in a penetrating manner so as to drive the wafers to rotate through the output shafts. The application provides a correct device of ion implantation target disk dose difference makes the wafer can carry out along with the revolution of target disk while can carry out the rotation again, and then corrects the difference of ion implantation dose on the wafer through the control rotational speed to guarantee that the ion implantation dose of wafer everywhere tends to the equilibrium.

Description

Device for correcting dose difference of ion implantation target disc

Technical Field

The application relates to the technical field of semiconductor processing, in particular to a device for correcting dose difference of an ion implantation target disk.

Background

Ion implantation is one of the important processes in wafer production. Ion implantation is a method in which when a beam of ion beam is emitted to a solid material in a vacuum, the beam is resisted by the solid material after being emitted to the solid material, so that the beam is slowly reduced in speed and finally stays in the solid material, and the method is used as a means for doping, stripping a thin film and the like and is widely applied to the technical field of semiconductors.

An ion implanter is a common apparatus used for ion implantation and is one of complex apparatuses in semiconductor processes. Wherein: the ion implanter is provided with a target chamber, the target chamber comprises an ion source, and the ion source generates positively charged ions from a source material; when the ions are sucked out, separating the ions by using a mass analyzer to form an ion beam of ions to be doped; the ion beam is accelerated in an electric field to achieve very high velocities (e.g., up to 10 f) ⁷ In the order of cm/s) such that the ions have sufficient kinetic energy to be implanted into the lattice structure of the wafer; the ion beam scans the whole wafer to uniformly dope the surface of the wafer; after the ion implantation, the impurity ions in the lattice structure are activated through a thermal annealing process.

Fig. 1 is a schematic view of an ion implantation. As shown in fig. 1, the wafer 01 is disposed on the target disk 02, the ion beam 03 scans back and forth in a certain direction (e.g., scans back and forth in the X-axis direction in the figure), the target disk 02 rotates (e.g., rotates in the Z-axis direction in the figure) to scan the ion beam 03 in the Y-axis direction of the wafer 01, and then the target disk 02 rotates and scans back and forth in a certain direction in combination with the ion beam 03 to implant ions in the ion beam 03 into the whole wafer 01. In production, it is found that different ion implantation doses are likely to occur at different positions on the wafer 01 from the center of the target plate 02, for example, the ion implantation dose is higher at the position closer to the center of the target plate 02 and is lower at the position farther from the center of the target plate 02.

SUMMERY OF THE UTILITY MODEL

The embodiment of the application provides a device for correcting dose difference of an ion implantation target disk, which is used for ensuring that the dose of ion implantation at each position of a wafer tends to be balanced.

In a first aspect, the present application provides an apparatus for correcting dose variation of an ion implantation target disk, comprising:

the target disc is provided with a plurality of target positions, and the target positions are used for arranging wafers;

the target disc rotation driving assembly is arranged on one side of the target disc, and an output shaft is in driving connection with the target disc so as to rotate the target disc;

and the wafer driving components are fixedly arranged on one side of the target disc, positioned on the back of the corresponding target position and provided with output shafts in a penetrating manner so as to drive the wafers to rotate through the output shafts.

In one implementation manner, the target position comprises an accommodating groove, one side of the accommodating groove is provided with a shaft mounting hole, and the shaft mounting hole is communicated with the accommodating groove and one side of the target disc;

wafer drive assembly includes the rotating electrical machines and bears the dish, the rotating electrical machines sets up one side of target dish just the output shaft of rotating electrical machines wears to establish in the axle mounting hole, bear the dish setting just in the holding tank one side of bearing the dish is connected the output shaft of rotating electrical machines.

In one implementation, the target disk rotary drive assembly includes a rotary drive motor, a target disk rotary seal, and a rotary shaft; the rotary driving motor is in driving connection with one end of the rotating shaft through a driving part, and the other end of the rotating shaft is connected with the target disc;

the target disk rotary sealing element is arranged on the rotating shaft and used for fixedly arranging the target disk in a target chamber of the ion implanter.

In one implementation manner, an end surface of the bearing disc on a side away from the output shaft of the rotating electrical machine is lower than a top surface of the containing groove, so that a side of the bearing disc connected with the wafer is located in the containing groove.

In an implementation mode, the transmission part is a conveyor belt, a first transmission wheel is arranged on an output shaft of the rotary driving motor, a second transmission wheel is arranged at one end of the rotary shaft, and the conveyor belt is sleeved on the first transmission wheel and the second transmission wheel.

In one implementation mode, a plurality of the target positions are uniformly arranged on the target disc, and the distance from the center of each target position to the center of the connection position of the target disc and the output shaft of the target disc rotation driving assembly is equal.

In one implementation, the target disk rotation driving component drives the target disk to rotate in a counterclockwise direction, and the wafer driving component drives the wafer to rotate in a clockwise direction.

In one implementation, a mounting groove is formed in the target disc, and the target position is arranged in the mounting groove.

In one implementation manner, the mounting groove is an annular mounting groove, the target disk is a circular disk, and the circle center of the mounting groove coincides with the circle center of the target disk.

In a second aspect, the present application provides another apparatus for correcting dose variation of an ion implantation target disk, comprising:

the target disc is provided with a plurality of target positions, and the target positions are used for arranging wafers;

the wafer driving components are fixedly arranged on one side of the target disc, are positioned on the back of the corresponding target position, and the output shaft penetrates through the corresponding target position so as to drive the wafer to rotate through the output shaft;

and the target disc rotation driving component is arranged on the other side of the target disc, and an output shaft is in driving connection with the target disc so as to enable the target disc to rotate.

In the device for correcting the dose difference of the ion implantation target disc, the target disc is connected with the target disc rotation driving assembly, and the target disc rotation driving assembly can drive the target disc to rotate; and a wafer driving assembly is arranged at the target position on the target disc and can drive the wafer arranged at the target position to rotate. So at the ion injection in-process, drive target plate rotation drive subassembly and wafer drive assembly, make the wafer can carry out along with the revolution of target plate while can carry out the rotation again, and then correct the difference of ion implantation dosage on the wafer through control rotational speed to guarantee that the ion implantation dosage of wafer everywhere tends to the equilibrium.

Drawings

In order to more clearly illustrate the technical solutions of the present disclosure, the drawings required to be used in some embodiments of the present disclosure will be briefly described below, and it is apparent that the drawings in the following description are only drawings of some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art according to these drawings. Furthermore, the drawings in the following description may be regarded as schematic diagrams, and do not limit the actual size of products, the actual flow of methods, the actual timing of signals, and the like, involved in the embodiments of the present disclosure.

FIG. 1 is a schematic view of an ion implantation process;

fig. 2 is a front view of an apparatus for correcting dose variations of an ion implantation target disk according to some embodiments;

FIG. 3 is a side view of an apparatus for correcting dose variations in an ion implantation target disk according to some embodiments;

FIG. 4 is an exploded schematic view of a wafer drive assembly and a target disk according to some embodiments;

FIG. 5 is a first diagram illustrating a first state of use of an apparatus for correcting dose variations of an ion implantation target disk according to some embodiments;

FIG. 6 is a second state diagram illustrating an apparatus for correcting dose variations of an ion implantation target disk according to some embodiments;

fig. 7 is a side view of another apparatus for correcting dose variations in an ion implantation target disk according to some embodiments.

Wherein:

01-wafer, 02-target disc, 03-ion beam, 04-beam source, 100-target disc, 110-target position, 111-accommodating groove, 112-shaft mounting hole, 120-mounting groove, 200-target disc rotary driving component, 210-rotary driving motor, 211-first driving wheel, 220-target disc rotary sealing component, 230-rotating shaft, 231-second driving wheel, 240-conveying belt, 300-wafer driving component, 310-rotary motor and 320-bearing disc.

Detailed Description

In order to make the technical solutions of the present application better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "left" and "right", etc. indicate orientations or positional relationships based on operational states of the present application, and are only used for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.

The device for correcting the dose difference of the ion implantation target disc provided by the embodiment of the application is used for enabling the ion implantation dose to tend to be balanced when an ion implanter is used for implanting ions into a wafer. Fig. 2 is a front view of an apparatus for correcting dose variation of an ion implantation target disk according to some embodiments, fig. 3 is a side view of an apparatus for correcting dose variation of an ion implantation target disk according to some embodiments, and fig. 2 and 3 illustrate the structure of the apparatus for correcting dose variation of an ion implantation target disk according to embodiments of the present application. The device for correcting the dose difference of the ion implantation target disc provided by the embodiment of the application is used for bearing a wafer when the wafer ion implantation is carried out, so that the wafer is relatively fixed in an ion implanter.

As shown in fig. 2 and 3, the apparatus for correcting dose difference of ion implantation target disks provided in the embodiments of the present application includes a target disk 100, a plurality of target sites 110 are disposed on the target disk 100, and the target sites 110 are used for supporting and fixing wafers, so that the wafers can be orderly disposed on the target disk 100. In some embodiments, the target site 110 is uniformly disposed on the target disc 100. In some embodiments, as shown in FIGS. 2 and 3, the target disc 100 is a circular target disc and the target site 110 is a circular target site, but the embodiment is not limited thereto and can be modified as needed.

In some embodiments, as shown in FIG. 2, 13 target sites 110 are provided on the target plate 100, and the 13 target sites 110 are uniformly arranged in a circular array on the target plate 100 such that the centers of the target sites 110 are equidistant from the center of the target plate 100, thereby facilitating space utilization on the target plate 100 and facilitating control of ion implantation for scanning the ion beam. Of course, in the embodiment of the present application, the number and arrangement shape of the target sites 110 on the target disk 100 are not limited thereto, and can be adjusted according to the size and shape of the wafer.

In some embodiments, as shown in fig. 2, the target plate 100 is a circular target plate, the target plate 100 is provided with a mounting groove 120, and the target 110 is uniformly disposed in the mounting groove 120. Illustratively, the mounting groove 120 is an annular mounting groove, and the center of the mounting groove 120 coincides with the center of the target disk 100.

In order to equalize the ion implantation dose when the ion implanter performs ion implantation into the wafer, in the apparatus for correcting the dose difference of the ion implantation target disk provided in the embodiment of the present application, the target disk 100 may rotate, and when the wafer is disposed on the target 110, the wafer may also rotate at the target 110. In some embodiments of the present application, the rotation direction of the target disk 100 is different from the rotation direction of the wafer on the target site 110, such as: the target plate 100 rotates counterclockwise, and the wafer rotates clockwise; or the target plate 100 rotates clockwise and the wafer on the target 110 rotates counterclockwise. The rotation speed of the target plate 100 and the rotation speed of the wafer may be obtained through experimental tests to equalize the ion implantation dose.

To achieve rotation of the target disk 100 and rotation of the wafer, as shown in fig. 3, a target disk rotation driving assembly 200 and a wafer driving assembly 300 are provided at one side of the target disk 100, and the other side of the target disk 100 is used for ion implantation. The output shaft of the target disk rotation driving assembly 200 is connected to the target disk 100, and the output shaft of the target disk rotation driving assembly 200 rotates to drive the target disk to rotate. The back of each target site 110 is provided with a wafer driving assembly 300, and the output shaft of each wafer driving assembly 300 is inserted into the corresponding target site 110 and used for driving and connecting the wafer, and the wafer is driven to rotate by driving the output shaft.

In some embodiments, as shown in fig. 3, the target disk rotary drive assembly 200 includes a rotary drive motor 210, a target disk rotary seal 220, and a rotary shaft 230; the rotary driving motor 210 is arranged on the target disc rotary sealing element 220, the rotary shaft 230 penetrates through the target disc rotary sealing element 220, and two ends of the rotary driving motor are positioned outside the target disc rotary sealing element 220; an output shaft of the rotation driving motor 210 is drivingly connected to one end of the rotation shaft 230; the other end of the rotary shaft 230 is connected to the target plate 100, and the rotary shaft 230 driven by the rotary driving motor 210 rotates the target plate 100. Of course, in the embodiment of the present application, the structure of the target disk rotation driving assembly 200 is not limited to the structure shown in fig. 3, and the motor with some other structure on the market may be selected or modified according to the space of the target chamber for receiving the ion implanter, the size of the target disk 100, and the like.

In the present embodiment, the target disk rotary seal 220 is used in conjunction with the target chamber of an ion implanter to position the target disk 100 within the target chamber of the ion implanter. Because the target chamber of ion implantation machine is vacuum environment usually, and then connect the target chamber through target plate rotary seal 220 and both conveniently fix the target plate in the target chamber, can be convenient for guarantee the leakproofness of target chamber again to avoid the target chamber because the device that will set up the correction ion implantation target plate dose difference influences the leakproofness of target chamber. And set up rotary drive motor 210 on target disc rotary seal 220, realize that rotary drive motor 210 sets up with rotation axis 230 side by side, can control the length of target disc rotary drive subassembly 200 to a certain extent, the device of the correction ion implantation target disc dosage difference of being convenient for cooperates the target chamber of ion implantation machine to use.

In the embodiment of the present application, the rotation driving motor 210 and the rotation shaft 230 are in driving connection through a transmission. Illustratively, the transmission member is a transmission belt 240, a first transmission wheel 211 is disposed on an output shaft of the rotary driving motor 210, a second transmission wheel 231 is disposed at one end of the rotary shaft 230, the transmission belt 240 is disposed on the first transmission wheel 211 and the second transmission wheel 231, and then the rotary driving motor 210 drives the first transmission wheel 211 to rotate through the output shaft thereof, the rotary first transmission wheel 211 drives the transmission belt 240 to move, and the movable transmission belt 240 drives the second transmission wheel 231 to rotate.

Fig. 4 is an exploded view of a wafer drive assembly and a target disk according to some embodiments. In some embodiments, as shown in FIGS. 3 and 4, the target site 110 is provided with a receiving slot 111 and a shaft mounting hole 112; the shaft mounting hole 112 is disposed at one side of the receiving groove 111 for communicating the receiving groove 111 with one side of the target plate 100, so that the output shaft of the wafer driving assembly can penetrate through the shaft mounting hole 112 and extend into the receiving groove 111. The receiving groove 111 may be a circular groove to facilitate the use of the space on the target plate 100, and is not limited to the circular groove, and may be selected according to actual needs and wafer shapes.

In some embodiments, as shown in fig. 3 and 4, the wafer drive assembly 300 includes a rotary motor 310 and a susceptor 320. The carrier tray 320 is disposed in the receiving groove 111, and the receiving groove 111 is formed to have a space for accommodating the carrier tray 320 to rotate therein. The rotary motor 310 is arranged on the back of the target site 110, and the output shaft of the rotary motor 310 passes through the shaft mounting hole 112 and is connected with the bearing disc 320, so that the output shaft of the rotary motor 310 rotates to directly drive the bearing disc 320 to rotate. During the ion implantation of the wafer, the wafer is disposed on the susceptor 320, and the rotation of the susceptor 320 directly drives the wafer to rotate. In some embodiments of the present invention, the top surface of the susceptor 320 is lower than the top surface of the receiving cavity 111, i.e. the susceptor 320 is located in the receiving cavity 111, such that one side of the wafer connected to the susceptor 320 is located in the receiving cavity 111; of course, the embodiment of the present application is not limited thereto, and the top surface of the carrier tray 320 may be flush with the top surface of the receiving groove 111 or higher than the top surface of the receiving groove 111.

Fig. 5 is a first usage state diagram of an apparatus for correcting dose variation of an ion implantation target plate according to some embodiments, fig. 6 is a second usage state diagram of an apparatus for correcting dose variation of an ion implantation target plate according to some embodiments, where fig. 6 is an attempt of a top view direction of the apparatus for correcting dose variation of an ion implantation target plate, and fig. 5 and 6 show a state when wafer ion implantation is performed in the embodiments of the present application. As shown in fig. 5 and 6, the wafer 01 is disposed at the target position 110, the target plate 100 is driven by the target plate rotation driving assembly 200 to rotate counterclockwise, and the wafer 01 is driven by the wafer driving assembly 300 to rotate clockwise; the beam source 04 is located at the other side of the target disk 100, and the ion beam 03 emitted by the beam source 04 is scanned back and forth in the X-axis direction by the magnetic field. The wafer driving assembly 300 drives the wafer 01 and the target plate 100 to rotate in opposite directions, so that the wafer 01 can revolve along with the target plate 100 and can rotate, the difference of ion implantation doses on the wafer 01 caused by the rotation of the wafer 01 driven by the target plate 100 during the ion implantation of the wafer 01 can be effectively compensated, and the ion implantation doses at all positions of the wafer 01 tend to be balanced.

Fig. 7 is a side view of another apparatus for correcting dose variations in an ion implantation target disk according to some embodiments. As shown in fig. 7, the apparatus for correcting the dose difference of the ion implantation target plate provided in this embodiment also includes a target plate 100, a target plate rotation driving assembly 200 and a wafer driving assembly 300; the target disk rotation driving assembly 200 is disposed at the other side of the target disk 100 so that the apparatus for correcting the dose difference of the ion implantation target disk can be applied to target chambers of ion implanters of different specifications and shapes. The detailed structures of the target disks 100, the target disk rotation driving assembly 200 and the wafer driving assembly 300 can refer to the structures shown in the above embodiments in the apparatus for correcting the dose difference of the ion implantation target disks, and are not limited to the structures shown in the above embodiments, and further modifications can be made.

The device for correcting the dose difference of the ion implantation target plate provided by the embodiment of the application drives the target plate rotation driving component 200 and the wafer driving component 300 in the ion implantation process, so that the wafer 01 can revolve along with the target plate 100 and can rotate, and the difference of the ion implantation dose on the wafer 01 is corrected by controlling the rotating speed, so that the ion implantation dose at each part of the wafer 01 tends to be balanced.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.

Claims (10)

1. An apparatus for correcting dose variation in an ion implantation target disk, the apparatus comprising:

the target disc is provided with a plurality of target positions, and the target positions are used for arranging wafers;

the target disc rotation driving assembly is arranged on one side of the target disc, and an output shaft is in driving connection with the target disc so as to rotate the target disc;

and the wafer driving components are fixedly arranged on one side of the target disc, positioned on the back of the corresponding target position and provided with output shafts in a penetrating manner so as to drive the wafers to rotate through the output shafts.

2. The device of claim 1, wherein the target site includes a receiving groove, one side of the receiving groove is provided with a shaft mounting hole, and the shaft mounting hole communicates the receiving groove and one side of the target disk;

wafer drive assembly includes the rotating electrical machines and bears the dish, the rotating electrical machines sets up one side of target dish just the output shaft of rotating electrical machines wears to establish in the axle mounting hole, bear the dish setting just in the holding tank one side of bearing the dish is connected the output shaft of rotating electrical machines.

3. The apparatus of claim 1, wherein the target disk rotary drive assembly comprises a rotary drive motor, a target disk rotary seal, and a rotary shaft; the rotary driving motor is connected with one end of the rotating shaft in a driving way through a transmission part, and the other end of the rotating shaft is connected with the target disc;

the target disk rotary sealing element is arranged on the rotating shaft and used for fixedly arranging the target disk in a target chamber of the ion implanter.

4. The apparatus of claim 2, wherein an end surface of the carrier plate away from the output shaft of the rotating electrical machine is lower than a top surface of the receiving cavity, such that a side of the carrier plate connected to the wafer is located in the receiving cavity.

5. The apparatus according to claim 3, wherein the transmission member is a transmission belt, a first transmission wheel is disposed on an output shaft of the rotary driving motor, a second transmission wheel is disposed on one end of the rotary shaft, and the transmission belt is sleeved on the first transmission wheel and the second transmission wheel.

6. The device of claim 1, wherein the plurality of target sites are uniformly disposed on the target disc, and the target sites are equidistant from the center of the target disc to the center of the target disc at the connection with the output shaft of the target disc rotation driving assembly.

7. The apparatus of claim 1, wherein the target disk rotation drive assembly drives counterclockwise rotation of the target disk and the wafer drive assembly drives clockwise rotation of the wafer.

8. The device of claim 1, wherein a mounting groove is provided on the target disc, the mounting groove housing the target site.

9. The apparatus of claim 8, wherein the mounting groove is an annular mounting groove, the target disk is a circular disk, and the center of the mounting groove coincides with the center of the target disk.

10. An apparatus for correcting dose variation in an ion implantation target disk, the apparatus comprising:

the target disc is provided with a plurality of target positions, and the target positions are used for arranging wafers;

the wafer driving components are fixedly arranged on one side of the target disc, are positioned on the back of the corresponding target position, and the output shaft penetrates through the corresponding target position so as to drive the wafer to rotate through the output shaft;

and the target disc rotation driving component is arranged on the other side of the target disc, and an output shaft is in driving connection with the target disc so as to enable the target disc to rotate.

Images