CN218443441U - Heat exchanger for single crystal furnace and single crystal furnace - Google Patents
Heat exchanger for single crystal furnace and single crystal furnace Download PDFInfo
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- CN218443441U CN218443441U CN202222256836.0U CN202222256836U CN218443441U CN 218443441 U CN218443441 U CN 218443441U CN 202222256836 U CN202222256836 U CN 202222256836U CN 218443441 U CN218443441 U CN 218443441U
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Abstract
The application provides a heat exchanger for a single crystal furnace and the single crystal furnace, wherein the heat exchanger for the single crystal furnace comprises a spiral coil, a liquid supply pipe and a liquid discharge pipe, the spiral coil surrounds an accommodating space with openings at two ends, and the accommodating space is used for accommodating a silicon single crystal rod; the spiral coil is formed by winding hollow cooling pipes in the same axial direction; the liquid supply pipe is arranged along the outer side of the spiral coil and is communicated with the bottom of the spiral coil and used for supplying coolant to the spiral coil; and the liquid discharge pipe is communicated with the top of the spiral coil and is used for discharging the coolant coiled by the spiral coil. The heat exchanger provided by the embodiment of the application increases the inner surface area of the heat exchanger, reduces the flow resistance of the coolant, and reduces the vortex formed in the flowing process of the coolant, so that the absorption efficiency of the heat exchanger on the latent heat of crystallization is enhanced; meanwhile, the heat exchanger is axisymmetric with the adjacent surface of the crystal bar, the temperature center of the thermal field is coincided with the center of the crystal, and the periodic fluctuation of the diameter and the pulling speed of the crystal caused by uneven cooling is avoided.
Description
Technical Field
The application relates to the technical field of crystal growth, in particular to a heat exchanger for a single crystal furnace and the single crystal furnace.
Background
Currently, single crystal silicon has wide application in the solar photovoltaic industry.
Single crystal silicon in the solar photovoltaic industry is generally prepared by the czochralski method. In the growth of the czochralski silicon single crystal, the production cost can be effectively reduced by improving the pulling speed. The more rapid pulling rate, the more latent heat of crystallization is released, and in order to maintain a good cycle of heat in the single crystal silicon growth furnace, it is necessary to increase the pulling rate to accelerate the release of latent heat of crystallization.
However, the water-cooled heat exchanger adopted in the existing czochralski crystal growing process has low cooling efficiency on the silicon single crystal rod, so that the crystal stretching rate is limited, and the crystal growing speed is inhibited.
Disclosure of Invention
The technical problem that this application will be solved provides a heat exchanger and single crystal growing furnace for single crystal growing furnace to solve the heat exchanger that current single crystal growth process used, it is not high to the cooling efficiency of single crystal silicon rod, lead to crystal stretching rate to be restricted, make the problem that the speed of crystal growth is inhibited.
In order to solve the above problems, the present application is implemented by the following technical solutions:
the application provides a heat exchanger for a single crystal furnace, which comprises a spiral coil, a liquid supply pipe and a liquid discharge pipe, wherein the spiral coil is enclosed into an accommodating space with two open ends, and the accommodating space is used for accommodating a growing single crystal silicon rod;
the spiral coil is formed by winding hollow cooling pipes in the same axial direction;
the liquid supply pipe is arranged along the outer side of the spiral coil and is communicated with the bottom of the spiral coil and used for supplying coolant to the spiral coil;
the liquid discharge pipe is communicated with the top of the spiral coil and used for discharging the coolant coiled by the spiral coil.
Optionally, in the heat exchanger for the single crystal furnace, a plurality of reinforcing ribs are arranged at intervals inside the spiral coil.
Optionally, in the heat exchanger for the single crystal furnace, the spiral coil is in an inverted cone shape.
Optionally, in the heat exchanger for the single crystal furnace, the cooling pipe is a stainless steel pipe or a copper pipe.
Optionally, the heat exchanger for the single crystal furnace further comprises an outer shell sleeved on the periphery of the spiral coil.
Optionally, in the heat exchanger for a single crystal furnace, an outer surface of the outer shell is a polished surface.
Optionally, in the heat exchanger for the single crystal furnace, the inner channel of the cooling tube is circular.
Optionally, in the heat exchanger for the single crystal furnace, a valve is arranged at the liquid supply pipe.
Optionally, in the heat exchanger for the single crystal furnace, the coolant is water.
The application also provides a single crystal furnace, which comprises a furnace body and the heat exchanger which is arranged in the furnace body and used for the single crystal furnace.
Compared with the prior art, the method has the following advantages:
the heat exchanger for the single crystal furnace comprises a spiral coil, a liquid supply pipe and a liquid discharge pipe, wherein the spiral coil is surrounded into an accommodating space with openings at two ends, and the accommodating space is used for accommodating a growing single crystal silicon rod; the spiral coil is formed by winding hollow cooling pipes in the same axial direction; the liquid supply pipe is arranged along the outer side of the spiral coil and is communicated with the bottom of the spiral coil and used for supplying coolant to the spiral coil; the liquid discharge pipe is communicated with the top of the spiral coil pipe and is used for discharging the coolant coiled by the spiral coil pipe; the spiral coil is used as a coolant channel in the heat exchanger, so that the internal surface area of the heat exchanger can be increased, the flow resistance of the coolant in the cooling pipe is effectively reduced, and the vortex formed in the flowing process of the coolant is reduced, so that the absorption efficiency of the heat exchanger on the latent heat of crystallization is enhanced; meanwhile, the liquid supply pipe is arranged along the outer side of the spiral coil and communicated with the bottom of the spiral coil, so that the heat exchanger is axially symmetrical with the adjacent surface of the crystal bar, the temperature center of the thermal field is superposed with the center of the crystal, and the periodic fluctuation of the diameter of the crystal and the pulling speed caused by uneven cooling is avoided.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
FIG. 1 is a schematic diagram of a prior art heat exchanger;
FIG. 2 is a schematic diagram of an internal water channel structure of a prior art heat exchanger;
FIG. 3 is a schematic structural diagram of a heat exchanger for a single crystal furnace according to an embodiment of the present application;
FIG. 4 is a schematic longitudinal sectional view of a heat exchanger for a single crystal furnace according to an embodiment of the present application;
fig. 5 is a partially enlarged view of a portion a in fig. 4.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
The heat exchanger for the single crystal furnace is mainly used for rapidly taking away the heat of the root of the monocrystalline silicon crystal by a heat exchange method, so that the rapid growth of the monocrystalline silicon is realized. As shown in fig. 1-2, a heat exchanger 10 for a single crystal furnace in the prior art is formed by sleeving an inner shell 11 and an outer shell 12 to form a heat exchanger cavity 13, a water inlet pipe 14 is directly communicated with the bottom of the heat exchanger cavity and divides the heat exchanger cavity into a plurality of layers through parallel water channel baffles 15, and circular or square interlayer channels 16 are arranged between adjacent layers, so that a fluid passage from a lower layer to an upper layer is formed, water flows firstly enter from the bottom of the heat exchanger and then flow out from the top after circulating layer by layer.
Because the lower layer of water flows to the upper layer of the heat exchanger and needs to pass through the interlayer channel 16, the flow resistance of the heat exchanger cavity 13 is greatly increased due to the irregular structure of the interlayer channel 16, the eddy current is large in the fluid circulation process, the heat efficiency of the water flow is greatly reduced, the efficiency of the water flow for taking away the latent heat of crystallization is influenced, and the rapid growth of monocrystalline silicon is hindered; in addition, because of the reason of the welding degree of difficulty, water course baffle 15 welds between interior outer casing through the mode of spot welding for there is the gap between water course baffle and the casing, makes rivers unable all flow through the heat exchanger cavity according to above-mentioned circulation route, further influences the efficiency that crystallization latent heat was taken away to rivers.
In view of the above problems, a heat exchanger 20 for a single crystal furnace according to an embodiment of the present invention includes a spiral coil 21, a liquid supply pipe 22, and a liquid discharge pipe 23, as shown in fig. 3 to 5, wherein the spiral coil 21 encloses an accommodating space 30 having two open ends, and the accommodating space 30 is used for accommodating a growing single crystal silicon rod; the spiral coil 21 is formed by winding a hollow cooling pipe 211 in the same axial direction; the liquid supply pipe 22 is disposed along an outer side of the spiral coil 21 and communicates with a bottom of the spiral coil 21, for supplying the coolant to the spiral coil 21; the drain pipe 23 is connected to the top of the spiral coil 21, and discharges the coolant that has been wound around the spiral coil 21.
In the heat exchanger 20 for the single crystal furnace provided by the application, the spiral coil 21 is formed by spirally winding the hollow cooling pipe 211 along the same axial direction, the spiral coil 21 is exposed, and two ends of the accommodating space 30 enclosed by the spiral coil 21 are opened, so that the accommodating space 30 can accommodate the growing single crystal silicon rod; the liquid supply pipe 22 is arranged along the outer side of the spiral coil 21 and is communicated with the bottom of the spiral coil 21, so that a coolant can be directly communicated with the bottom of the spiral coil 21 and enter the cooling pipe 211 at the outer side of the spiral coil 21, and then spirally rises to the top of the spiral coil 21 from the bottom of the spiral coil 21 along the cooling pipe 211, so that the coolant can continuously perform heat exchange with the silicon single crystal rod accommodated in the accommodating space 30; after the coolant reaches the top of the spiral coil 21, it enters the drain pipe 23, i.e., is discharged from the spiral coil 21, completing the entire process of flowing the coolant through the heat exchanger 20 for the single crystal furnace.
The spiral coil 21 is used as a coolant channel in the heat exchanger 20, and the spiral coil 21 is exposed, so that the internal surface area of the heat exchanger 20 can be increased, the heat exchanger 20 can more fully exchange heat with monocrystalline silicon in the accommodating space 30, the coolant resistance is effectively reduced, the eddy formed in the flowing process of the coolant is reduced, and the absorption efficiency of the heat exchanger 20 on the latent heat of crystallization is enhanced; meanwhile, the liquid supply pipe 22 is arranged along the outer side of the spiral coil 21 and is communicated with the bottom of the spiral coil 21, so that the heat exchanger 20 is axisymmetric with the adjacent surface of the crystal bar, the temperature center of the thermal field is superposed with the center of the crystal, and the periodic fluctuation of the diameter of the crystal and the pulling speed caused by uneven cooling is avoided. Therefore, the heat exchanger 20 provided by the embodiment of the application can effectively solve the problems that the heat exchanger 20 used in the existing single crystal growth process is low in cooling efficiency of the silicon single crystal rod, so that the crystal stretching rate is limited, and the crystal growth speed is inhibited.
Specifically, since the latent heat of crystallization of the ingot is dissipated by heat transfer mainly in the form of heat radiation, the heat transfer by radiation between the facing surfaces of the same area conforms to the following formula (1):
Q＝A*5.67e-8/(1/ε_h+1/ε_c-1)*(T_h^4-T_c^4) (1)
q is radiation heat exchange quantity, A is the area of the heat exchanger, epsilon _ h is the emissivity of the crystal bar, 1/epsilon _ c is the emissivity of the surface of the heat exchanger, T _ h is the temperature of the surface of the crystal bar, and T _ c is the temperature of the surface of the heat exchanger.
According to the formula (1), the effective area of the heat exchanger 20 for exchanging heat with the crystal bar is increased, so that the radiation heat transfer efficiency of the heat exchange quantity to the crystal bar can be improved, and the growth speed of the czochralski silicon is improved.
Specifically, in the heat exchanger 20 that this application provided, with the spiral water course naked for the heat exchanger 20 internal surface area increases 3 times than former heat exchanger 20, and radiation heat transfer efficiency strengthens by a wide margin.
In addition, the spiral coil 21 in the embodiment of the present application is formed by winding the hollow cooling pipe 211 in the same axial direction, that is, the spiral coil 21 is integrally formed, and a coolant flowing channel is formed inside the spiral coil without extra welding, so that the phenomenon of insufficient coolant flowing caused by a pipeline welding gap is avoided.
Alternatively, in one embodiment, the heat exchanger 20 for a single crystal furnace provided in the present application, the spiral coil 21 is provided with a plurality of reinforcing ribs 24 at intervals inside. Wherein the inside of the helical coil 21 is the side facing the receiving space 30. The application provides a heat exchanger 20 through set up stiffening rib 24 in spiral coil 21 is inboard, not only can further increase heat exchanger 20's internal surface area, still connects spiral coil 21 as an organic whole, can effectively strengthen this heat exchanger 20's structural strength. Specifically, the reinforcing ribs 24 are provided inside the helical coil 21 in the axial direction of the helical coil 21, thereby more effectively connecting the upper and lower layers of the helical coil 21 as one body.
Alternatively, in one embodiment, the plurality of reinforcing ribs 24 are uniformly disposed inside the spiral coil 21, so that the entire heat exchanger 20 is axisymmetric with respect to the plane adjacent to the ingot, and the thermal field temperature center and the crystal center are ensured to coincide.
In practical applications, the reinforcing ribs 24 may be welded to the inside of the spiral coil 21. While the number of reinforcing ribs 24 can be designed flexibly according to the structure.
Alternatively, in an embodiment, in the heat exchanger 20 for a single crystal furnace provided in the embodiment of the present application, the spiral coil 21 has an inverted cone shape with a large top and a small bottom, that is, the radius of the axial cross section of the spiral coil 21 gradually increases from bottom to top to match the crystal pulling apparatus and the crystal pulling operation.
Alternatively, in one embodiment, the spiral coil 21 includes a tapered portion 212 and a cylindrical portion 213 formed by the tapered portion 212 spirally extending upward, i.e., the radius of the axial cross-section of the spiral coil 21 gradually increases from bottom to top and then remains the same, which can better match the crystal pulling apparatus and the crystal pulling operation.
Alternatively, in the embodiment of the present application, the inner channel of the cooling tube 211 is circular, so as to facilitate the fluid flow, further reduce the flow resistance of the coolant in the cooling tube 211, and reduce the vortex formed by the coolant during the flow.
The diameter of the cooling tube 211 is preferably 10mm to 50mm, for example, 10mm, 20mm, 30mm, 40mm or 50mm.
The cooling pipe 211 is made of a material having high structural strength and facilitating heat conduction. In practical applications, the cooling pipe 211 is a stainless steel pipe or a copper pipe.
In the embodiment of the present application, the coolant may be a liquid or a gas, and may transfer heat with the monocrystalline silicon through the cooling pipe 211, so as to cool the monocrystalline silicon. Optionally, the coolant is water.
Optionally, the heat exchanger 20 for the single crystal furnace provided in the embodiment of the present application further includes an outer shell 25 sleeved on the periphery of the spiral coil 21, and the outer shell 25 is used to block external heat. Wherein, above-mentioned shell body 25 is that the cover of cover tube form cup joints in spiral coil 21 periphery, not only can realize the protection and the fixing to spiral coil 21, can also utilize shell body 25 to separate spiral coil 21 and the monocrystalline silicon of acceping with the external world to effective separation external heat, make spiral coil 21 only conduct heat with monocrystalline silicon, avoided spiral coil 21 to absorb the heat in the external thermal field, thereby cause the negative effects that the single crystal growing furnace operation consumption risees, cost increase.
Wherein, the shape of the outer shell 25 is adapted to the external shape of the spiral coil 21, for example, if the spiral coil 21 is in an inverted cone shape, the outer shell 25 is also in an inverted cone shape.
In the embodiment of the application, the material for preparing the outer shell 25 has higher structural strength so as to better fix the spiral coil 21 inside; in addition, the material for preparing the outer shell 25 should also be capable of effectively blocking the heat of the external thermal field.
Alternatively, in one embodiment, the outer shell 25 is made of stainless steel or copper pipe, the outer shell 25 is integrally formed, and the outside of the spiral coil 21 is fixed to the inside of the outer shell 25. Alternatively, the helical coil 21 is fixed to the inside of the outer shell 25 by welding with reinforcing ribs 24.
Optionally, in a specific embodiment, the outer surface of the outer shell 25 is a polished surface, which can increase the thermal resistance between the external thermal field and the internal spiral coil 21, further reduce the absorption of external heat, thereby reducing power consumption, and ensure effective heat exchange between the spiral coil 21 and the ingot, thereby increasing the growth rate of czochralski silicon.
In the embodiment of the present application, the liquid supply pipe 22 of the heat exchanger 20 and the outer side of the spiral coil 21 are sunk into the spiral coil 21, that is, are disposed between the spiral coil 21 and the outer shell 25, and are connected to the bottom of the spiral coil 21, and the liquid discharge pipe 23 is connected to the top of the spiral coil 21, so that the coolant supplied through the liquid supply pipe 22 is directly sent to the bottom of the spiral coil 21 at the outer side of the spiral coil 21, and then rises to the top along the spiral coil 21 and flows into the liquid discharge pipe 23.
The liquid supply pipe 22 and the liquid discharge pipe 23 are erected on the outer casing 25, so that the outer casing 25 is utilized to support the liquid supply pipe 22 and the liquid discharge pipe 23, and the spiral coil 21 is prevented from being deformed by being extruded from top to bottom under the action of gravity.
Alternatively, the liquid supply pipe 22 and the liquid discharge pipe 23 are erected on two opposite sides of the outer shell 25, for example, respectively erected on two ends of a circular ring of the top axial section of the outer shell 25, so that the outer shell 25 can uniformly bear the pressure of the liquid supply pipe 22 and the liquid discharge pipe 23, and the whole heat exchanger 20 is more structurally fixed.
Optionally, a valve 26 is provided at the supply line 22 to better control the flow of coolant to the helical coil 21. The valve 26 is specifically disposed at the inlet end of the liquid supply tube 22, i.e. at the end of the liquid supply tube 22 near the top of the outer casing 25, so as to operate the valve 26 as required. In practical applications, the valve 26 may be an electric valve 26, a pneumatic valve 26, a hydraulic valve 26, a manual valve 26, etc., and the valve body may be made of cast iron, forged steel, cast steel, stainless steel, copper, titanium, plastic, etc.
The heat exchanger 20 provided by the embodiment of the application takes the basic theory of heat transfer as support, and by optimizing the structure of the heat exchanger 20 for the single crystal furnace and using the spiral coil 21 as a coolant channel in the heat exchanger 20, the internal surface area of the heat exchanger 20 can be increased, the flow resistance of the coolant in the cooling pipe 211 is effectively reduced, and the vortex formed in the flowing process of the coolant is reduced.
Compared with the conventional heat exchanger 10 shown in fig. 1-2, the heat exchanger 20 provided in the embodiment of the present application has an increased inner surface area by 3 times and a significantly reduced vortex strength under the condition that the volume of the accommodating space 30 is the same.
By comparing the water flow of the existing heat exchanger 10 with the water flow of the heat exchanger 20 provided in the application example through simulation, the water outlet flow rate of the heat exchanger 20 provided in the application example is increased by 2 times under the same water inlet pressure, and the specific structural data is as shown in table 1 below.
TABLE 1
The existing heat exchanger 10 and the heat exchanger 20 provided by the application embodiment are respectively adopted to carry out Czochralski silicon growth, and tests prove that the pull rate of the existing heat exchanger 10 is 1.6mm/min at most, and the pull rate of the water flow of the heat exchanger 20 provided by the application embodiment is 1.75mm/min at most; compared with the conventional heat exchanger 10, the pull speed of the heat exchanger 20 provided by the embodiment of the application is improved by 0.15mm/min.
In addition, the application also provides a single crystal furnace, wherein the single crystal furnace comprises a furnace body and the heat exchanger for the single crystal furnace, which is arranged in the furnace body.
For the embodiment of the single crystal furnace, the heat exchanger for the single crystal furnace is included, and the same technical effect can be achieved, so that repeated description is omitted here to avoid repetition, and related parts can be referred to only through partial description of the embodiment of the heat exchanger for the single crystal furnace.
In summary, in the embodiment, the heat exchanger for the single crystal furnace in the application includes the spiral coil pipe, the liquid supply pipe and the liquid discharge pipe, the spiral coil pipe encloses the accommodating space with two open ends, and the accommodating space is used for accommodating the single crystal silicon rod; the spiral coil is formed by winding hollow cooling pipes in the same axial direction; the liquid supply pipe is arranged along the outer side of the spiral coil and is communicated with the bottom of the spiral coil and used for supplying coolant to the spiral coil; the liquid discharge pipe is communicated with the top of the spiral coil pipe and is used for discharging the coolant coiled by the spiral coil pipe; the spiral coil is used as a coolant channel in the heat exchanger, so that the internal surface area of the heat exchanger can be increased, the flow resistance of the coolant in the cooling pipe is effectively reduced, and the vortex formed in the flowing process of the coolant is reduced, so that the absorption efficiency of the heat exchanger on the latent heat of crystallization is enhanced; meanwhile, the liquid supply pipe is arranged along the outer side of the spiral coil and communicated with the bottom of the spiral coil, so that the heat exchanger is axially symmetrical with the adjacent surface of the crystal bar, the temperature center of the thermal field is superposed with the center of the crystal, and the periodic fluctuation of the diameter of the crystal and the pulling speed caused by uneven cooling is avoided.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
While alternative embodiments of the present application have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including alternative embodiments and all such alterations and modifications as fall within the true scope of the embodiments of the application.
Finally, it should also be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity from another entity without necessarily requiring or implying any actual such relationship or order between such entities. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or terminal apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or terminal apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of additional like elements in an article or terminal equipment comprising the element.
The technical solutions provided in the present application are described in detail above, and the principles and embodiments of the present application are described herein by using specific examples, and meanwhile, for a person of ordinary skill in the art, according to the principles and implementation manners of the present application, changes may be made in the specific embodiments and application ranges.
Claims (10)
1. The heat exchanger for the single crystal furnace is characterized by comprising a spiral coil, a liquid supply pipe and a liquid discharge pipe, wherein the spiral coil is encircled to form an accommodating space with two open ends, and the accommodating space is used for accommodating a growing single crystal silicon rod;
the spiral coil is formed by winding hollow cooling pipes in the same axial direction;
the liquid supply pipe is arranged along the outer side of the spiral coil and is communicated with the bottom of the spiral coil and used for supplying coolant to the spiral coil;
the liquid discharge pipe is communicated with the top of the spiral coil and used for discharging the coolant coiled by the spiral coil.
2. The heat exchanger for the single crystal furnace according to claim 1, wherein a plurality of reinforcing ribs are provided at intervals inside the spiral coil.
3. The heat exchanger for the single crystal furnace as set forth in claim 1, wherein the spiral coil has an inverted conical shape.
4. The heat exchanger for the single crystal furnace according to claim 1, wherein the cooling tube is a stainless steel tube or a copper tube.
5. The heat exchanger for the single crystal furnace according to claim 1, further comprising an outer shell sleeved on the periphery of the spiral coil.
6. The heat exchanger for the single crystal furnace according to claim 5, wherein an outer surface of the outer shell is a polished surface.
7. The heat exchanger for the single crystal furnace according to claim 1, wherein the inner passage of the cooling tube is circular.
8. The heat exchanger for the single crystal furnace according to claim 1, wherein a valve is provided at the liquid supply pipe.
9. The heat exchanger for the single crystal furnace according to claim 1, wherein the coolant is water.
10. A single crystal furnace, characterized by comprising a furnace body and the heat exchanger for the single crystal furnace according to any one of claims 1 to 9 installed inside the furnace body.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222256836.0U CN218443441U (en) | 2022-08-25 | 2022-08-25 | Heat exchanger for single crystal furnace and single crystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222256836.0U CN218443441U (en) | 2022-08-25 | 2022-08-25 | Heat exchanger for single crystal furnace and single crystal furnace |
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| CN218443441U true CN218443441U (en) | 2023-02-03 |
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| CN202222256836.0U Active CN218443441U (en) | 2022-08-25 | 2022-08-25 | Heat exchanger for single crystal furnace and single crystal furnace |
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