CN218277254U

CN218277254U - Remote intelligent static elimination circuit and eliminator

Info

Publication number: CN218277254U
Application number: CN202221876437.8U
Authority: CN
Inventors: 陈永; 蒙贵萍; 朱熠辰
Original assignee: Wuxi Yanpin Electronic Technology Co ltd
Current assignee: Wuxi Yanpin Electronic Technology Co ltd
Priority date: 2022-07-20
Filing date: 2022-07-20
Publication date: 2023-01-10
Anticipated expiration: 2032-07-20

Abstract

The utility model discloses a remote intelligent static electricity elimination circuit and eliminator, which comprises a MCU, a positive ion generating circuit connected with the MCU, a negative ion generating circuit connected with the MCU, a PWM control circuit connected with the MCU, and a current detection circuit connected with the MCU and used for detecting the current of the negative ion generating circuit and the current of the positive ion generating circuit; the output end of the PWM control circuit is connected to the negative ion generating circuit and the positive ion generating circuit and used for controlling the on-off of the negative ion generating circuit and the positive ion generating circuit. The utility model discloses a remote intelligent static eliminator adopts the direct current pulse technique to automatically match and eliminate static according to the size and the polarity of static, regard super high direct current voltage (10-30 KV) as power, drive ionization air neutralization static reaches remote static elimination.

Description

Remote intelligent static elimination circuit and eliminator

Technical Field

The utility model relates to an electrostatic elimination specifically is a remote intelligent electrostatic elimination circuit, annihilator, elimination system.

Background

Winding and unwinding applications extend through all industries, whether plastic films, paper, or textiles. In the process of rapidly winding and unwinding, a large amount of friction, peeling and extrusion can be generated between materials and rollers, so that static charges with different electric properties are accumulated on the surface area of an object, and the static value is continuously accumulated along with the increase of speed and duration, thereby causing a serious static problem. Different winding and unwinding modes such as a center winding mode, a compression roller winding mode and a tower winding mode are adopted, and the electrostatic eliminator can achieve an ideal electrostatic elimination effect only by different correct installation modes. When there is not enough installation space, the long-distance high-voltage intelligent static eliminator is needed to achieve the purpose of eliminating static electricity.

The existing ion bar is generally an alternating current ion bar, namely a power frequency ion bar and a pulse alternating current ion bar, and the high voltage of the ion bar is about plus or minus 7 Kv. The working frequency of the power frequency ion bar is 50hz, the working frequency is limited, positive ions and negative ions are alternately generated from the same discharge needles, the positive ions and the negative ions can be self-neutralized in a windless state, the positive ions and the negative ions need to be conveyed by means of compressed air, and static electricity cannot be eliminated remotely. The pulse AC ion bar has wide working frequency range and can be switched between 0.1 hz and 100hz, and static electricity can be eliminated without wind, but because the working mode is the pulse AC mode, positive and negative ions are alternately generated in the same electrostatic needle and are output from the same ion jet orifice, the phenomenon of self-neutralization of the positive and negative ions still exists, and thus the static electricity can not be eliminated remotely.

Accordingly, the prior art is deficient and needs improvement.

SUMMERY OF THE UTILITY MODEL

In order to solve the defects of the prior art, the utility model provides a remote intelligent static elimination circuit, annihilator, elimination system, the utility model discloses a remote intelligent static eliminator adopts the direct current pulse technique to automatically match and eliminate static according to the size and the polarity of static, regard super high direct current voltage (10-30 KV) as power, drive ionization air neutralization static, reach remote elimination static.

In order to achieve the technical purpose, the utility model adopts the following technical scheme: a remote intelligent static elimination circuit comprises an MCU (microprogrammed control unit), a positive ion generation circuit connected with the MCU, a negative ion generation circuit connected with the MCU, a PWM (pulse-width modulation) control circuit connected with the MCU, and a current detection circuit connected with the MCU and used for detecting the current of the negative ion generation circuit and the current of the positive ion generation circuit;

the output end of the PWM control circuit is connected to the negative ion generating circuit and the positive ion generating circuit and used for controlling the on-off of the negative ion generating circuit and the positive ion generating circuit.

Further, the positive ion generating circuit comprises a positive ion transformer conduction circuit, a three-level positive ion transformer and a positive ion voltage doubling rectifying circuit, wherein the input end of the positive ion transformer conduction circuit is connected to the MCU and used for receiving a P control signal, the output end of the positive ion transformer conduction circuit is connected to the three-level positive ion transformer and used for controlling the on-off of the three-level transformer, the three-level positive ion transformer is respectively connected with the positive ion voltage doubling rectifying circuit, and the three-level positive ion voltage doubling rectifying circuit is connected in series and then outputs positive ions vf +.

Furthermore, the negative ion generating circuit comprises a negative ion transformer conduction circuit, a three-level negative ion transformer and a negative ion voltage doubling rectifying circuit, wherein the input end of the negative ion transformer conduction circuit is connected to the MCU and used for receiving N control signals, the output end of the negative ion transformer conduction circuit is connected to the three-level negative ion transformer and used for controlling the connection and disconnection of the three-level transformer, the three-level negative ion transformer is respectively connected with the negative ion voltage doubling rectifying circuit, and the three-level negative ion voltage doubling rectifying circuit is connected in series and then outputs negative ions vf-.

Further, the PWM control circuit includes a PWM control chip U301, an input end of the PWM control chip U301 is connected to the MCU and receives a PWM control signal, and an output end is connected to the three-stage positive ion transformer and the three-stage negative ion transformer.

Further, the current detection circuit comprises an electronic switch U7, an operational amplifier U6 and a comparison chip U8, wherein an input end of the electronic switch U7 is connected to the MCU and used for receiving a conduction signal, an output end of the electronic switch U7 is connected to the operational amplifier U6 and used for controlling a working state of the operational amplifier U6 to read a current signal, an output end of the operational amplifier U6 is connected to the comparison chip U8 and output to the MCU, and the comparison chip U8 outputs to the MCU.

A remote intelligent static eliminator comprises a negative static pin, a positive static pin and a circuit board; the circuit board is provided with a static elimination circuit; the negative electrostatic needle is connected to the output end of the negative ion generating circuit, and the positive electrostatic needle is connected to the output end of the positive ion generating circuit.

Furthermore, the circuit board is also provided with a high-voltage abnormity detection circuit, an enabling circuit, a cleaning circuit, an interface terminal, a mode selection circuit and an alarm circuit.

To sum up, the utility model discloses following technological effect has been gained:

1. the utility model is internally provided with a high voltage of plus or minus 30Kv, a low voltage of 24 to 36 is inverted into a high voltage circuit of plus or minus 30Kv, a three-level high frequency transformer is connected in series, and TL494PWM control is carried out to realize high-voltage high-power output, provide enough power for remote transmission and realize the remote static elimination of 10 to 1500 mm;

2. the utility model is provided with positive and negative ion detection, and the size and polarity of the automatic induction static electricity realize automatic matching and static elimination;

3. the utility model separates the positive and negative emitting needles, boosts the pressure by 15 grades, prevents the ions from neutralizing each other by separating the positive and negative emitting needles, strengthens the performance and achieves the instantaneous static removing speed;

4. the utility model discloses remote demonstration and operating condition control are realized in 485 communications.

Drawings

Fig. 1 is a schematic diagram of an MCU pin provided in the embodiment of the present invention;

FIG. 2 is a schematic diagram of a positive ion generating circuit;

FIG. 3 is a schematic diagram of a negative ion generating circuit;

FIG. 4 is a schematic diagram of a PWM control circuit;

FIG. 5 is a schematic diagram of a current sensing circuit;

fig. 6 is a schematic flow diagram of an abatement system.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings.

The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications to the present embodiment without inventive contribution as required after reading the present specification, but all of them are protected by patent laws within the scope of the claims of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.

In the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, a first feature "on" or "under" a second feature may be directly contacting the second feature or the first and second features may be indirectly contacting the second feature through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

The embodiment is as follows:

a remote intelligent static elimination circuit comprises an MCU (microprogrammed control unit), a positive ion generating circuit 2 connected with the MCU, a negative ion generating circuit 3 connected with the MCU, a PWM (pulse-width modulation) control circuit 4 connected with the MCU, and a current detection circuit 5 connected with the MCU and used for detecting the current of the negative ion generating circuit and the current of the positive ion generating circuit; the positive ion generating circuit 2 is used for generating a large amount of positive ions to eliminate negative static electricity, the negative ion generating circuit 3 is used for generating a large amount of negative ions to eliminate positive static electricity, and the current detecting circuit 5 is used for detecting current to match static electricity in real time.

The output end of the PWM control circuit 4 is connected to the negative ion generating circuit 3 and the positive ion generating circuit 2, so as to control the on/off of the negative ion generating circuit 3 and the positive ion generating circuit 2.

As shown in fig. 1, the schematic diagram of the MCU is shown, as shown in fig. 2, the positive ion generating circuit 2 includes a positive ion transformer turn-on circuit 201, a three-level positive ion transformer 202, and a positive ion voltage-doubling rectifying circuit 203, an input end of the positive ion transformer turn-on circuit 201 is connected to the MCU for receiving a P control signal, an output end of the positive ion transformer turn-on circuit 201 is connected to the three-level positive ion transformer 202 for controlling on/off of the three-level transformer, the three-level positive ion transformer 202 is respectively connected to a positive ion voltage-doubling rectifying circuit 203, and the three-level positive ion voltage-doubling rectifying circuit 203 is connected in series to output positive ions vf +.

Specifically, as shown in fig. 2, the positive ion transformer turn-on circuit 201 includes a MOS transistor Q305, a MOS transistor Q2000, and a MOS transistor Q2001, where 4 pins of the MOS transistor Q305 are connected to 18 pins of the MCU, and are configured to receive a P Ctrl signal sent by the MCU, where the P Ctrl signal is at a high/low level, when the P Ctrl signal is at a high level, the MOS transistor Q305 is turned on, 5, 6, 7, and 8 pins of the MOS transistor Q305 output turn-on signals to the MOS transistor Q2000 and the MOS transistor Q2001, and after the MOS transistor Q2000 and the MOS transistor Q2001 are turned on, an on signal is sent to the three-stage positive ion transformer 202, that is, the three transformers T2-1, T2-2, and T2-3 are controlled to be turned on and off, and after voltage currents are output by the three transformers, voltage-multiplying rectification is performed by the positive ion voltage-multiplying rectification circuit 203, so that the currents are boosted by 15 stages, and a large amount of positive ions vf + are output to the positive electrostatic pin by the connector J21, thereby improving an electrostatic elimination effect of static electricity.

Specifically, as shown in fig. 2, 4 pins of the MOS transistor Q305 are connected to 18 pins of the MCU through a resistor R308, and at the same time, 4 pins of the MOS transistor Q305 are also connected to ground through a resistor R309 and ground through a zener diode D305, and after 5, 6, 7, and 8 pins of the MOS transistor Q305 are connected together, the pins are connected to 1-3 pins of the MOS transistor Q2000, 1-3 pins of the MOS transistor Q2001, the zener diode D2001, a resistor R2000, an emitter of the transistor Q2003, an emitter of the transistor Q2002, the zener diode D2000, and the resistor R2001, respectively, wherein 4 pins of the zener diode D2001, the resistor R2000, and the MOS transistor Q2000 are connected together through a capacitor C2001 and mixed with a collector of the transistor Q2002 and 5-8 pins of the MOS transistor Q2001, and are connected to 6 pins and 2 pins of the T2-1, 6 pins and 2 pins of the T2-3, and 6 pins of the T2-1 are connected together through a capacitor C2001, and 6 pins of the T2-3 are connected through a capacitor C2002, and a capacitor C-3. After the 5-8 pins of the MOS transistor Q2000 and the collector of the triode Q2003 are connected together, one path is connected to the resistor R2001, the zener diode D2000 and the 4 pins of the MOS transistor Q2001 through the capacitor C2000, and the other path is connected to the 6 pins and the 2 pins of T2-1, the 6 pins and the 2 pins of T2-2 and the 6 pins and the 2 pins of T2-3. The base of transistor Q2003 is connected to pin 5 of T2-1.

Pins

3 and 4 of T2-1,

pins

3 and 4 of T2-2 and

pins

3 and 4 of T2-3 are connected with a T24V signal from the PWM control circuit.

The three-stage positive ion transformer 202 comprises transformers T2-1, T2-2 and T2-3, the three stages receive conducting signals of an MOS tube Q2000 and an MOS tube Q2001, and output voltage currents of the three stages are amplified by 15 times after voltage doubling rectification of a positive ion voltage doubling rectification circuit 203 respectively, so that the output positive ions are large in quantity.

Taking the positive ion voltage doubling rectifying circuit 203 of the transformer T2-1 as an example, the positive ion voltage doubling rectifying circuit comprises 6 reverse diodes and 6 capacitors, wherein the 6 diodes are connected in parallel, namely PDB201, PDB202, PDB203, PDB204, PDB205 and PDB206, the directions of the adjacent diodes are opposite, the 6 capacitors are respectively PBC201, PBC202, PBC203, PBC204, PBC205 and PBC206, and the 6 capacitors are connected in series between the two connected diodes at intervals to form voltage doubling rectification.

As shown in fig. 3, the negative ion generating circuit 3 includes a negative ion transformer conduction circuit 301, a three-stage negative ion transformer 302, and a negative ion voltage doubling rectifying circuit 303, wherein an input end of the negative ion transformer conduction circuit 301 is connected to the MCU for receiving the N control signal, an output end of the negative ion transformer conduction circuit 301 is connected to the three-stage negative ion transformer 302 for controlling the on/off of the three-stage transformer, the three-stage negative ion transformer 302 is respectively connected to a negative ion voltage doubling rectifying circuit 303, and the three-stage negative ion voltage doubling rectifying circuit 303 is connected in series to output negative ions vf-.

Further, the negative ion transformer conduction circuit 301 has the same circuit connection structure as the positive ion transformer conduction circuit 201, and includes an MOS transistor Q306, an MOS transistor Q1000, and an MOS transistor Q1001, where 4 pins of the MOS transistor Q306 are connected to 42 pins of the MCU to receive an N Ctrl signal sent by the MCU, where the N Ctrl signal is at a high/low level, and when the N Ctrl signal is at a high level, the MOS transistor Q306 is turned on, and

pins

5, 6, 7, and 8 of the MOS transistor Q306 output conduction signals to the MOS transistor Q1000 and the MOS transistor Q1001, and after the MOS transistor Q1000 and the MOS transistor Q1001 are turned on, the MOS transistor Q1001 sends an on signal to the three-stage negative ion transformer 302, that is, to control the turn-off of the transformers T1-1, T1-2, and T1-3, and after the three transformers output voltage currents, the three transformers perform voltage doubling rectification through the negative ion voltage doubling rectification circuit 303, so that the currents generate 15-stage voltage boosting, thereby outputting a large amount of negative ions vf +, and outputting to the negative static pin by using the connector J11, thereby improving the static electricity eliminating effect.

The connection relationship among the MOS transistor Q306, the MOS transistor Q1000, and the MOS transistor Q1001 is the same as the connection relationship of the positive ions in fig. 2, and is not described again here.

The three-level negative ion transformer 302 is transformers T1-1, T1-2 and T1-3, the three levels receive conduction signals of the MOS tube Q1000 and the MOS tube Q1001, and output voltage currents of the three levels are amplified by 15 times after voltage doubling rectification of the negative ion voltage doubling rectification circuit 303, so that the output negative ions are large in quantity.

The connection relationship between the negative ion voltage doubling rectifier circuit 303 and the transformer is the same as the positive ion connection structure in fig. 2, but the direction of the diodes of the negative ion voltage doubling rectifier circuit 303 is different, and taking the negative ion voltage doubling rectifier circuit 303 of the transformer T1-1 as an example, the directions of the 6 diodes of the negative ion voltage doubling rectifier circuit 303 are PDB101, PDB201, PDB301, PDB401, PDB501, PDB601, and the directions of the 6 diodes are opposite to the directions of the diodes of the positive ion voltage doubling rectifier circuit 203 of fig. 2.

In the embodiment, a transformer and voltage doubling rectification are adopted to invert the low voltage 24-36 into a positive and negative 30Kv high voltage circuit, so that the low voltage to high voltage output is realized, the remote power is provided, and the static elimination effect is improved.

Meanwhile, in the present embodiment, the positive ion generating circuit 2 uses the positive dc high voltage generator to realize more ion generating quantities and instantaneous negative charge removal speed, and the negative ion generating circuit 3 uses the negative dc high voltage generator to realize more ion generating quantities and instantaneous positive charge removal speed. The positive ion generating circuit 2 is connected to the positive electrostatic needle, and the negative ion generating circuit 3 is connected to the negative electrostatic needle, so that the positive and negative emitting needles are separated, the ions are prevented from being neutralized, the performance is enhanced, and the instantaneous static electricity removing speed is increased.

As shown in fig. 2 and fig. 3, pins 3 and 4 of the transformer T1 and the transformer T2 are both connected with a T24V signal, the T24V signal is output by an inductor L301, specifically, an output terminal of the inductor L301 outputs the T24V signal to

pins

3 and 4 of the transformers T1-1, T1-2, and T1-3, and also outputs the T24V signal to

pins

3 and 4 of the transformers T2-1, T2-2, and T2-3, and the T24V signal is used to control the transformer operation of positive ions or the transformer operation of negative ions.

Still further, as shown in fig. 3, the inductor L301 is connected to a PWM on circuit 5, and the PWM on circuit 5 is connected to the PWM control circuit 4 through a connector J1. The PWM conducting circuit 5 includes a transistor Q304, wherein pin 1 of the transistor Q304 is connected to the connector J1 through a resistor R305, pin 3 is connected to the 3.3V power supply, and pin 2 is connected to the inductor L301. When the PWM control circuit 4 outputs the on signal to the transistor Q304, the transistor Q304 is turned on to output a T24V signal.

As shown in fig. 4, the PWM control circuit 4 includes a PWM control chip U301, an input end of the PWM control chip U301 is connected to the MCU and receives the PWM control signal, and an output end is connected to the three-stage positive ion transformer 202 and the three-stage negative ion transformer 302. Further, pin 2 of the PWM control chip U301 is connected to pin 43 of the MCU through the resistor R320 and the connector J1 to receive the high/low level transmitted by the MCU, the PWM control chip U301 outputs a PWM adjustment signal according to the high/low level, and outputs a PWM signal wave from pin 8 to control the width of the PWM wave, and the PWM signal wave is connected to the resistor R305 through the connector J1 to reach the transistor Q304 to control the on/off of the transistor Q304, so as to control the inductor L301 to output a T24V signal to control the operation of the transformer.

Specifically, as shown in fig. 4, pin 1 of U301 is connected to pin 2 through a capacitor C311, pin 3 is connected to pin 2 through a capacitor C312, one path of pin 2 is connected to pin 43 of the MCU through a resistor R320, one path is grounded through a resistor R321, and the other path is grounded through a resistor R319 and a capacitor C313.

The pin 1 of the U301 is further connected to the vf-terminal of the negative ion generating circuit 3 through the resistor R331 and the connector J11 for receiving the output amount of negative ions, the pin 1 of the U301 is further connected to the vf + terminal of the positive ion generating circuit 2 through the resistor R332 and the connector J21 for receiving the output amount of positive ions, and the U301 controls and outputs PWM waves with different widths according to the output amount of positive and negative ions, thereby controlling the working states of the negative ion generating circuit 3 and the positive ion generating circuit 2. One path of the pin 15 of the U301 is connected with a 5V power supply through a resistor R322, one path is grounded through a resistor R325, and the other path is grounded through a capacitor C314.

As shown in fig. 5, the current detection circuit 5 includes an electronic switch U7, an operational amplifier U6, and a comparison chip U8, wherein pin 1 of U7 is connected to pin 37 of the MCU through a resistor R14 and a connector J5, pin 2 is connected to pin 38 of the MCU through a resistor R15 and a connector J5, pin 8 is connected to pin 33 of the MCU through a resistor R15 and a connector J5, pin 16 is connected to pin 32 of the MCU through a resistor R15 and a connector J5, pins 2 and 3 correspond to the output of pin 1, pins 6 and 7 correspond to the output of pin 8, pins 10 and 11 correspond to the output of pin 9, and pins 14 and 15 correspond to the output of pin 16, and form 4 switches respectively corresponding to 4 paths of signals for controlling and reading currents in different working periods. Pin 2 of U7 is connected to pin 2 of U6, pins 3 and 11 of U7 are commonly connected to pin 1 of U6, and pin 2 of U6 is connected with pin 1 of U6 through capacitor C8. The pin 7 of the U7 is connected to the pin 5 of the U6, the pin 7 of the U7 is connected with a reference current REF through a capacitor C12 as a reference voltage, the pin 6 and the pin 10 of the U7 are connected and then connected with the reference current REF through a capacitor C13, one path of the pin 15 of the U7 is connected with the reference current REF as a reference voltage, the other path of the pin is connected with the pin 14 of the U7 through a resistor R18 and is connected to the pin 2 of the U6 through a resistor R19 and a resistor R20. The resistor R19 is grounded through a resistor R21, meanwhile, a capacitor C14, a resistor R22 and a capacitor C15 which are connected in parallel are arranged at two ends of the resistor R21, and the capacitor C14, the resistor R22 and the capacitor C15 are all connected with a reference current REF.

As shown in fig. 5, pin 3 of U6 is connected to reference current REF, pin 6 of U6 is connected to reference current through resistor R13, one path of pin 7 of U6 is connected to resistor R13 through resistor R12 and capacitor C10, resistor R12 and capacitor C10 are connected in parallel, the other path of pin 7 of U6 is connected to pin 2 of U8 through resistor 27, and pin 1 of U8 outputs PB5/C20 signal to pin 41 of MCU through resistor R29. Meanwhile, a resistor R26 is connected between the pin 1 and the pin 2 of the U8, the pin 3 of the U8 is connected with a reference current REF as a reference voltage, the pin 5 of the U8 is connected with a 3.3V power supply, and the pin 6 of the U8 outputs the reference current REF.

Pin 7 of U6 outputs a PB4/C19 signal to pin 40 of the MCU via resistor R28. The capacitor C18 is connected between the resistor R28 and the resistor R29.

In this embodiment, the input terminal of the electronic switch U7 is connected to the MCU and configured to receive the on signal, specifically: pins 1, 8, 9 and 16 of the U7 are input terminals of a 4-way switch, and pins 37, 38, 33 and 32 of the MCU output high and low levels for selectively turning on a certain switch, for example, when the pin 37 of the MCU outputs a high level, pin 1N1 of the electronic switch U7 is turned on, so that pins 2 and 3, i.e., pins D1 and S1, of the electronic switch U7 output signals to the operational amplifier U6, the operational state of the electronic switch U6 is controlled to be operational, a current magnitude signal at a static end is read, an amplified current is output to pin 2 of the comparison chip U8 through pin 7 of the U6 after amplification via a resistor R27, and the comparison chip U8 receives the amplified current and outputs a reference current REF from pin 6 after comparison with 3.3V; in addition, the amplified current output by the pin 7 of the U6 outputs a PB4/C19 signal to the pin 40 of the MCU through the connector J4 through the resistor R28, the current output by the pin 1 of the U8 outputs a PB5/C20 signal to the pin 41 of the MCU through the connector J4 through the resistor R29, the PB4/C19 signal and the PB5/C20 signal are sent to the MCU for identification, and the MCU is controlled to output a P Ctrl signal N Ctrl signal according to the current state, so that the output of positive and negative ions is adjusted.

The output end of the electronic switch U7 is connected to the operational amplifier U6 and used for controlling the working state of the operational amplifier U6 so as to read a current signal, the output end of the operational amplifier U6 is connected to the comparison chip U8 and outputs the current signal to the MCU, and the comparison chip U8 outputs the current signal to the MCU so as to control the output of positive and negative ions.

In this embodiment, the current detection circuit 5 is provided to monitor positive and negative ions, and automatically induce the size and polarity of static electricity to realize automatic matching and static elimination.

In this embodiment, the MCU outputs a P Ctrl signal and an N Ctrl signal, when the P Ctrl is at a high level and the N Ctrl signal is at a low level, the positive ion generating circuit 2 corresponding to the P Ctrl signal operates, the negative ion generating circuit 3 corresponding to the N Ctrl signal does not operate, the P Ctrl signal is sent to the MOS transistor Q305 of the positive ion generating circuit 2, so that the positive ion transformer conduction circuit 201 where the MOS transistor Q305 is located is conducted, the three-stage transformer T2 is conducted, a high-voltage current signal is output, and high-voltage positive ions at 15-fold level are output after voltage-doubling rectification by the corresponding positive ion voltage-doubling rectifying circuit 203 for eliminating negative ion static electricity; if the P Ctrl is at a low level and the N Ctrl signal is at a high level, the positive ion generating circuit 2 corresponding to the P Ctrl signal does not operate, and the negative ion generating circuit 3 corresponding to the N Ctrl signal operates, which has the same operating principle and is not described herein again;

the positive and negative ions are also provided with PWM control for controlling the output of the positive and negative ions, the MCU outputs high and low levels to the PWM control circuit 4, and the PWM control circuit 4 receives the real-time output quantity of the positive and negative ions and outputs a PWM signal wave so as to control the working states of the positive ion generating circuit 2 and the negative ion generating circuit 3;

the MCU sends high and low level signals to control the operational amplifier to read current signals of the positive and negative ends, the current signals are output to the MCU after being compared by the comparison chip U8, and the MCU controls the output quantity of positive and negative ions according to the received signals to form closed-loop control.

The utility model discloses keep apart positive and negative ion generating circuit each other, form independent circuit to regard positive static needle, burden static needle as independent static needle, can not interfere with each other, can not take place the neutralization phenomenon of static needle.

A remote intelligent static eliminator comprises a negative static needle, a positive static needle and a circuit board; the circuit board is provided with a static elimination circuit; the negative electrostatic needle is connected to the output end of the negative ion generating circuit 3, and the positive electrostatic needle is connected to the output end of the positive ion generating circuit 2.

The circuit board is also provided with a high-voltage abnormity detection circuit, an enabling circuit, a cleaning circuit, an interface terminal, a mode selection circuit and an alarm circuit, so that an MCU intelligent control management network is realized, automatic static detection and elimination are realized, a cleaning signal is required to be output, the whole machine is subjected to overcurrent and overvoltage protection, remote 485 communication and start-stop control are realized, an LED indicates the working state of the whole machine, and the like

A remote intelligent static electricity eliminating system comprises a remote intelligent static electricity eliminator.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all changes and modifications equivalent to any simple modifications made to the above embodiments according to the technical spirit of the present invention are all within the scope of the technical solution of the present invention.

Claims

1. A remote intelligent static elimination circuit is characterized in that: the device comprises an MCU, a positive ion generating circuit (2) connected with the MCU, a negative ion generating circuit (3) connected with the MCU, a PWM control circuit (4) connected with the MCU, and a current detecting circuit (5) connected with the MCU and used for detecting the current of the negative ion generating circuit and the current of the positive ion generating circuit;

the output end of the PWM control circuit (4) is connected to the negative ion generating circuit (3) and the positive ion generating circuit (2) and used for controlling the on-off of the negative ion generating circuit (3) and the positive ion generating circuit (2).

2. The remote intelligent static elimination circuit of claim 1, wherein: the positive ion generating circuit (2) comprises a positive ion transformer conducting circuit (201), a three-level positive ion transformer (202) and a positive ion voltage doubling rectifying circuit (203), wherein the input end of the positive ion transformer conducting circuit (201) is connected to the MCU and used for receiving a P control signal, the output end of the positive ion transformer conducting circuit (201) is connected to the three-level positive ion transformer (202) and used for controlling the on-off of the three-level transformer, the three-level positive ion transformer (202) is respectively connected with the positive ion voltage doubling rectifying circuit (203), and the three-level positive ion voltage doubling rectifying circuit (203) is connected in series and then outputs positive ion vf +.

3. The remote intelligent static elimination circuit of claim 2, wherein: the anion generating circuit (3) comprises an anion transformer conducting circuit (301), a three-level anion transformer (302) and an anion voltage doubling rectifying circuit (303), wherein the input end of the anion transformer conducting circuit (301) is connected to the MCU for receiving N control signals, the output end of the anion transformer conducting circuit (301) is connected to the three-level anion transformer (302) for controlling the on-off of the three-level transformer, the three-level anion transformer (302) is respectively connected with one anion voltage doubling rectifying circuit (303), and the three-level anion voltage doubling rectifying circuit (303) outputs anion vf-after being connected in series.

4. The remote intelligent static elimination circuit of claim 3, wherein: the PWM control circuit (4) comprises a PWM control chip U301, the input end of the PWM control chip U301 is connected to the MCU and receives PWM control signals, and the output end of the PWM control chip U301 is connected to the three-stage positive ion transformer (202) and the three-stage negative ion transformer (302).

5. The remote intelligent static elimination circuit of claim 4, wherein: the current detection circuit (5) comprises an electronic switch U7, an operational amplifier U6 and a comparison chip U8, wherein the input end of the electronic switch U7 is connected to the MCU and used for receiving a conducting signal, the output end of the electronic switch U7 is connected to the operational amplifier U6 and used for controlling the working state of the operational amplifier U6 to read a current signal, the output end of the operational amplifier U6 is connected to the comparison chip U8 and output to the MCU, and the comparison chip U8 outputs to the MCU.

6. A remote intelligent static eliminator is characterized in that: comprises a negative electrostatic needle, a positive electrostatic needle and a circuit board; the circuit board is provided with a static elimination circuit; the static elimination circuit adopts a remote intelligent static elimination circuit as claimed in any one of claims 1-5, the negative static needle is connected to the output end of the negative ion generation circuit (3), and the positive static needle is connected to the output end of the positive ion generation circuit (2).

7. A remote intelligent static eliminator as claimed in claim 6, wherein: the circuit board is also provided with a high-voltage abnormity detection circuit, an enabling circuit, a cleaning circuit, an interface terminal, a mode selection circuit and an alarm circuit.