CN2181675Y - Integrated thermoelectric film infrared detector - Google Patents
Integrated thermoelectric film infrared detector Download PDFInfo
- Publication number
- CN2181675Y CN2181675Y CN 93238628 CN93238628U CN2181675Y CN 2181675 Y CN2181675 Y CN 2181675Y CN 93238628 CN93238628 CN 93238628 CN 93238628 U CN93238628 U CN 93238628U CN 2181675 Y CN2181675 Y CN 2181675Y
- Authority
- CN
- China
- Prior art keywords
- infrared
- silicon chip
- chip substrate
- layer
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model relates to an integrated thermoelectric film infrared detector, belonging to a temperature sensitive infrared detector. The utility model is mainly composed of a thermoelectric thin film 6, a resorption electrode 8, the infrared sensing element 1 of a conduction electrode, a silicon chip substrate 2 having an amplifying circuit and a thermal isolation isolating layer 9. The thermoelectric thin film can be directly deposited and attached on the silicon chip substrate, a silicon dioxide circuit protective layer 5 can be arranged between the silicon chip substrate 2 and thermal isolation isolating layer 9, and a layer air-gap 10 used for enhancing thermal insulation can be arranged between the circuit protective layer 5 and the thermal isolation isolating layer 9. The utility model can be used as a cell form, a multielement form, etc. The utility model has the advantages of high integration level, small size and high sensitivity, and can be used for infrared alarm, image formation, monitoring, spectral analysis, etc.
Description
The utility model belongs to a kind of temperature-sensitive infrared eye of making of pyroelectric film material, can be used for aspects such as infrared alarm, infrared imaging, infrared monitoring.
The used pyroelectricity material of pyroelectric infrared detector of many types is the blocks material at present, as three Gly sulfuric acid TGS monocrystalline, lithium tantalate LiTaO
aMonocrystalline, lead titanates PbTiO
3Pottery etc.For example: a kind of pyroelectric infrared sensor that proposes in No. 5034608, the U.S. Pat of announcing on July 23rd, 1991 is to do thermal coupling to prepare infrared sensor with a kind of medium and substrate again behind the flaky pottery material attenuate.Having introduced the pyroelectric sensor that adopts on a kind of ceramic gamma camera on " New Electronics " in October, 1991 number, is the 80 μ m that are processed into 100 * 100 yuan behind the flaky pottery attenuate
2The junior unit array, the reusable heat solder flux makes ceramic array be connected with transistor array on the substrate.
Because just there is higher detection sensitivity in the infrared-sensitive that pyroelectricity material is only made when 2～5 μ m are thick unit.Therefore the common technique difficult point of prior art is need can reach the thick limit of 0.1mm to the body material from general machining to be thinned to 2～5 μ m thicker, but also the articulation issues that will solve amplifying circuit on infrared-sensitive unit and the substrate (is normally welded with upside-down mounting, technology such as thermal coupling), thereby the complicated process of preparation that causes pyroelectric infrared sensor, volume is big, integrated level is low, the cost height.
The purpose of this utility model is exactly in order to overcome the deficiency that prior art exists, a kind of modern film preparing technology and modern semiconductors integrated circuit technique utilized proposed, pyroelectricity material directly is deposited on formation electric heating film infrared-sensitive unit on the silicon chip substrate, it is little to prepare volume, the integrated level height, highly sensitive integrated form Pyroelectric Thin Film Infrared Detector.
For realizing the purpose of this utility model, the infrared-sensitive unit with comprising pyroelectricity material and absorption electrode, conducting electrode is shaped on the silicon chip substrate of amplifying circuit and the heat insulation separation layer between it and constitutes infrared eye.It is characterized in that pyroelectricity material and heat insulation separation layer are thin layers, deposition is attached on the silicon chip substrate.
Fig. 1 is the structure principle chart of integrated form Pyroelectric Thin Film Infrared Detector;
Fig. 2 is the structure principle chart with integrated form Pyroelectric Thin Film Infrared Detector of air-gap.
Fig. 3 is the fundamental diagram of integrated form Pyroelectric Thin Film Infrared Detector;
Fig. 4 is the structure principle chart of quadrant integrated form Pyroelectric Thin Film Infrared Detector;
Fig. 5 is the structure principle chart of one dimension linear array integrated form Pyroelectric Thin Film Infrared Detector;
Fig. 6 is the structure principle chart of two-dimensional array integrated form Pyroelectric Thin Film Infrared Detector;
Below in conjunction with accompanying drawing in detail the utility model is described in detail.
As shown in Figure 1, infrared-sensitive unit of the present utility model (1) can comprise electric heating film (6), in its lower section as one deck platinum Pt film of conducting electrode (7) with in the above as absorbing the nickel-chromium Ni-Cr film of electrode (8) to absorb ultrared one deck.The pre-amplification circuit (3) (can answer transistor for single field) and the secondary amplification circuit (4) (can be integrated operational amplifier circuit) that adopt integrated circuit technique to make are arranged in the silicon chip substrate (2).For protection amplifying circuit (3,4), one deck circuit protecting layer (5) can be arranged on silicon chip substrate (2).For making electric heating film (6) that good electric property and thermal insulation properties be arranged, one deck heat insulation separation layer (9) is arranged on circuit protecting layer (5).Circuit protecting layer (5), heat insulation separation layer (9), conducting electrode (7), electric heating film (6) and absorption electrode (8) can adopt modern film preparing technology to be deposited on successively on the silicon chip substrate (2), become real integrated component.Infrared-sensitive unit (1) be positioned at amplifying circuit (3,4) above, the fill factor, curve factor of silicon chip can reach 100%.
For making infrared eye have better thermal insulation properties and electric property; obtain higher sensitivity and resolution; below heat insulation separation layer (9); be between circuit protecting layer (5) and the heat insulation separation layer (9); can increase one deck air-gap (10) to strengthen heat insulation, as shown in figure (2).The LF-response effect of infrared eye will further be improved.
Manufacturing process of the present utility model is: on the silicon chip substrate (2) for preparing amplifying circuit (3), (4) with the SIC (semiconductor integrated circuit) technology, at first prepare the thick silicon dioxide SiO of one deck 0.2～0.6 μ m with thermal oxidation method
2Circuit protecting layer (5) is unlikely destroyed with protection amplifying circuit (3), (4) in the process of making infrared-sensitive unit.The magnesium oxide MgO film of preparation one deck 0.4～0.8 μ m to improve the oriented growth characteristic and the crystallization property of electric heating film, improves the electric property of electric heating film as heat insulation separation layer (9) on circuit protecting layer (5) then.Magnesium oxide MgO film can prepare with radio frequency sputtering method or laser flash method.As setting up air-gap (10), promptly earlier at silicon dioxide SiO
2The phosphate TPS film that is equipped with one deck 0.5～2 μ m above the circuit protecting layer (5) with collosol and gel Sol-Gel legal system; preparation magnesium oxide MgO heat insulation separation layer (9) on phosphate TPS film etches away the phosphate TPS film below the magnesium oxide MgO film with modern micro etch technology then again.Like this, magnesium oxide MgO heat insulation separation layer and silicon dioxide SiO
2Promptly form the air-gap (10) of one deck 0.5～2 μ m between the film protective seam.This air-gap (10) generally only is located at below the infrared-sensitive unit.As several infrared-sensitive units (1) are arranged on the silicon chip substrate (2), then air-gap (10) had both strengthened heat insulation as net distribution, can guarantee the internal intensity of detector again.Then can go up the thick platinum Pt film of preparation one deck 0.2～0.6 μ m as conducting electrode (7), require platinum Pt film to have certain orientation good orientation to be arranged to guarantee electric heating film (6) at magnesium oxide MgO film (9).Platinum Pt film can prepare with radio frequency sputtering method or electron-beam vapor deposition method.Can use radio frequency sputtering method on conducting electrode (7), MOD method or collosol and gel Sol-Gel legal system are equipped with the crystalline state electric heating film (6) with height preferred orientation of one deck 0.5～2 μ m.The material that electric heating film is selected for use has (Pb, La) TiO
3(load lanthanium titanate PLT), (Sr, Ba) Na
2O
6(strontium barium niobate SBN), Pb(Mg
1/3Nb
2/3) O
3(lead magnesio-niobate PMN), Pb(Sc, Ta) O
3(scandium lead tantanate PST), Pb(Zr, Ti) O
3(lead zirconate titanate PZT) or LiTaO
3(lithium tantalate LT) etc.Absorb infrared ray in order to be beneficial to detector, the nickel-chromium Ni-Cr film that can adopt vacuum vapor deposition method to go up preparation one deck 0.01～0.2 μ m at electric heating film (6) is used to absorb infrared radiation as absorbing electrode (8).Use aluminium electrode (11) to connect mutually with the amplifying circuit (3,4) on the silicon chip substrate (2) infrared-sensitive unit (1) more at last, can use after the encapsulation.
The utility model can the adapted frequency adjustable chopper (13) and the infrared fileter (12) of different-waveband, can finish signal measurement to distinctive infra-red bands, can be used for aspects such as infrared imaging, infrared alarm, infrared monitoring.Its principle of work is seen shown in Figure 3.
The utility model has overcome the deficiencies in the prior art, and the technical difficulty (material attenuate, upside-down mounting welding etc.) when having avoided the preparation pyroelectric infrared detector is characterized in:
1. integrated production.Adopt modern film preparing technology doing on the silicon chip substrate of amplifying circuit directly deposit electric heating film, can realize integrated on same silicon chip substrate of pyroelectric infrared detector and amplifying circuit.The thickness of electric heating film and quality can accurately be controlled.
2. volume is little, the integrated level height.Because the area of an infrared-sensitive unit can be accomplished 50 * 50 μ m
2, thereby on a φ 75mm or φ 100mm silicon chip, can prepare a plurality of infrared eyes simultaneously, integrated level can reach 1024 * 1024 or higher.
3. can large-scale production.Utilize modern semiconductors integrated circuit technique and modern film preparing technology on a streamline, to prepare the integrated form Pyroelectric Thin Film Infrared Detector.
4. highly sensitive, resolution is strong.The utility model noticed that the heat between infrared-sensitive unit and the substrate is isolated and each infrared-sensitive unit between heat isolate, thereby improved technical indicators such as the element sensitivity of detector and polynary resolution.
5. be widely used.Because integrated form pyroelectric infrared detector volume is little, highly sensitive, reliable operation, the spectral coverage of adaptation wide (0.8 μ m～200 μ m), thereby can be widely used in infrared imaging, infrared alarm, infrared monitoring, aspects such as spectral analysis.
Owing to can prepare several independently integrated Pyroelectric Thin Film Infrared Detector on the silicon chip substrate (2), can constitute the infrared eye of unit, polynary various ways such as (quadrant, one dimension linear array, two-dimensional arrays) according to different needs.
Embodiment one: quadrant integrated form pyroelectric infrared detector.
As shown in Figure 4, at least 4 infrared-sensitive units (1) are arranged on silicon chip substrate (2).4 infrared-sensitive units become ten shapes to arrange, and are connected with aluminium electrode (11) respectively.Available load lanthanium titanate PLT or lead magnesio-niobate PMN make electric heating film.
Embodiment two: one dimension linear array integrated form pyroelectric infrared detector.
As shown in Figure 5, on silicon chip substrate (2), there is at least 16 infrared-sensitive units (1) being aligned to arrange, is connected with aluminium electrode (11) respectively.Available load lanthanium titanate PLT or lead zirconate titanate PZT are made electric heating film.
Embodiment three: two-dimensional array integrated form pyroelectric infrared detector.
As shown in Figure 6, at least 32 infrared-sensitive units (1) are arranged on silicon chip substrate (2), these infrared-sensitive units arrange with 2 * 16 form, are connected with aluminium electrode (11) respectively.Available load lanthanium titanate PLT or scandium lead tantanate PST make electric heating film.
Claims (5)
1, integrated form Pyroelectric Thin Film Infrared Detector, by the infrared-sensitive unit that comprises pyroelectricity material and absorption electrode, conducting electrode, being shaped on the silicon chip substrate of amplifying circuit and the heat insulation separation layer between it constitutes, it is characterized in that pyroelectricity material and heat insulation separation layer are thin layers, deposition is attached on the silicon chip substrate.
2, infrared eye as claimed in claim 1 is characterized in that electric heating film adopts load lanthanium titanate (PLT), strontium barium niobate (SBN), lead magnesio-niobate (PMN), scandium lead tantanate (PST), lead zirconate titanate (PZT) or lithium tantalate (LT) material.
3, infrared eye as claimed in claim 1 is characterized in that silicon dioxide SiO is arranged between silicon chip substrate and the thermal insulation layer
2Circuit protecting layer.
4, infrared eye as claimed in claim 3 is characterized in that silicon dioxide SiO
2Between circuit protecting layer and the heat insulation separation layer one deck air-gap is arranged.
5, as each infrared eye in the claim 1 to 4, it is characterized in that including an above infrared-sensitive unit on the silicon chip substrate of amplifying circuit being shaped on, infrared-sensitive identical permutation becomes ten shapes, or is arranged in one dimension one linear array, or is arranged as two-dimensional array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93238628 CN2181675Y (en) | 1993-05-05 | 1993-05-05 | Integrated thermoelectric film infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93238628 CN2181675Y (en) | 1993-05-05 | 1993-05-05 | Integrated thermoelectric film infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2181675Y true CN2181675Y (en) | 1994-11-02 |
Family
ID=33813315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93238628 Expired - Fee Related CN2181675Y (en) | 1993-05-05 | 1993-05-05 | Integrated thermoelectric film infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2181675Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023058A (en) * | 2010-09-30 | 2011-04-20 | 烟台睿创微纳技术有限公司 | Film type pyroelectric infrared sensor |
| CN102538977A (en) * | 2011-12-27 | 2012-07-04 | 郑州炜盛电子科技有限公司 | Miniature pyroelectric infrared sensor |
| CN102901565A (en) * | 2012-07-09 | 2013-01-30 | 电子科技大学 | Uncooled infrared detector and preparation method thereof |
| CN110137299A (en) * | 2019-05-17 | 2019-08-16 | 中国科学院上海技术物理研究所 | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure |
-
1993
- 1993-05-05 CN CN 93238628 patent/CN2181675Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023058A (en) * | 2010-09-30 | 2011-04-20 | 烟台睿创微纳技术有限公司 | Film type pyroelectric infrared sensor |
| CN102538977A (en) * | 2011-12-27 | 2012-07-04 | 郑州炜盛电子科技有限公司 | Miniature pyroelectric infrared sensor |
| CN102901565A (en) * | 2012-07-09 | 2013-01-30 | 电子科技大学 | Uncooled infrared detector and preparation method thereof |
| CN110137299A (en) * | 2019-05-17 | 2019-08-16 | 中国科学院上海技术物理研究所 | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5684302A (en) | Pyrodetector element having a pyroelectric layer produced by oriented growth, and method for the fabrication of the element | |
| US5850098A (en) | Uncooled amorphous YBaCuO thin film infrared detector | |
| EP0611443B1 (en) | Thin film pyroelectric imaging array | |
| Lee et al. | Pyroelectric sensors | |
| Shorrocks et al. | Integrated thin film PZT pyroelectric detector arrays | |
| US5602043A (en) | Monolithic thermal detector with pyroelectric film and method | |
| Whatmore et al. | Pyroelectric materials and devices | |
| US7732770B2 (en) | Thin film multi-layered pyroelectric capacitor | |
| Ye et al. | Pyroelectric PbTiO3 thin films for microsensor applications | |
| JPH0743215A (en) | Infrared detecting element | |
| CN102903789B (en) | Preparation method of composite material infrared detector | |
| CN2181675Y (en) | Integrated thermoelectric film infrared detector | |
| Okuyama et al. | PbTiO3 ferroelectric thin films and their pyroelectric application | |
| EP0596329B1 (en) | Method of fabricating a pyroelectric infrared detector | |
| US20200003627A1 (en) | Pyroelectric sensor | |
| US5834776A (en) | Microbolometer cell structure | |
| US5804823A (en) | Bismuth layered structure pyroelectric detectors | |
| CN101867011B (en) | Pyroelectric film material and preparation method thereof | |
| GB2288690A (en) | Pyroelectric infared detector having mesa structures | |
| Fuflyigin et al. | Free-standing films of PbSc 0.5 Ta 0.5 O 3 for uncooled infrared detectors | |
| Bruchhaus et al. | A 11× 6 element pyroelectric detector array utilizing self-polarized pzt thin films grown by sputtering | |
| GB2310318A (en) | Ferroelectric device | |
| Zhu et al. | Application of ferroelectric BST thin film prepared by MOD for uncooled infrared sensor of dielectric bolometer mode | |
| JP3331507B2 (en) | Pyroelectric infrared sensor | |
| JPS6138427A (en) | Infrared detection element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |