CN218123349U - Reaction chamber protective housing and plasma etching equipment - Google Patents
Reaction chamber protective housing and plasma etching equipment Download PDFInfo
- Publication number
- CN218123349U CN218123349U CN202222551565.1U CN202222551565U CN218123349U CN 218123349 U CN218123349 U CN 218123349U CN 202222551565 U CN202222551565 U CN 202222551565U CN 218123349 U CN218123349 U CN 218123349U
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- reaction
- main body
- protective housing
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The application provides a reaction chamber protective housing and plasma etching equipment, the reaction chamber protective housing includes: the main body is in a hollow cylindrical shape, and the size of the main body is matched with that of the reaction cavity; the mounting part is positioned at the top of the main body and is used for mounting the reaction cavity protective shell in the reaction cavity; the base plate is positioned at the bottom of the main body and is circular, a plurality of air suction holes are formed in the base plate, and the sizes of the air suction holes are sequentially increased from the center of the base plate to the outside; the main body, the mounting part and the chassis are of an integrated structure. The application provides a reaction chamber protective housing and plasma etching equipment, reaction chamber protective housing bottom is provided with a plurality of aspirating holes that the size increases in proper order to the edge by the centre of a circle, can make the flow of reaction intracavity plasma more stable and even, makes plasma even at wafer surface distribution, improves reaction efficiency and reaction stability.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a reaction cavity protective shell and plasma etching equipment.
Background
Inductively Coupled Plasma (ICP) etching technology is an important process in the fabrication process of semiconductor chips. The plasma etching process is completed by a plasma etcher. The plasma etching process comprises the steps of introducing etching gas, generating plasma, diffusing the plasma to the surface of a sample to be etched, diffusing the plasma on the surface to be etched, reacting the plasma with surface substances, desorbing and discharging reaction products and the like.
In the whole etching process, in order to ensure the efficiency and stability of the etching process, the flow of plasma generated by etching gas in the reaction cavity tends to be stable; furthermore, there is a need to protect the inner walls of the apparatus from contamination by the reactants. At present, a reaction cavity lining is generally used for protecting the inner wall of the reaction cavity, and a vacuum pumping ring is additionally arranged below the reaction cavity lining to guide the flow of plasma through pumping so that the flow of the plasma tends to be stable.
However, the current reaction cavity liner and vacuum pumping ring still have problems, the protection of the inner wall of the reaction cavity is not good enough, and the flow of the plasma is not stable and uniform enough. Therefore, there is a need to provide a more effective and reliable solution to protect the inner wall of the reaction chamber from contamination and to make the flow of plasma in the reaction chamber more stable and uniform.
SUMMERY OF THE UTILITY MODEL
The application provides a reaction chamber protective housing and plasma etching equipment can protect the reaction chamber inner wall not contaminated better to make the flow of reaction intracavity plasma more stable and even, make plasma even at wafer surface distribution, improve reaction efficiency and reaction stability, and the installation of reaction chamber protective housing, dismantlement and maintenance are all more convenient.
One aspect of the present application provides a reaction chamber protective housing for a plasma etching apparatus, comprising: the main body is in a hollow cylindrical shape, and the size of the main body is matched with that of the reaction cavity; the mounting part is positioned at the top of the main body and is used for mounting the reaction cavity protective shell in the reaction cavity; the base plate is positioned at the bottom of the main body and is circular, a plurality of air suction holes are formed in the base plate, and the sizes of the air suction holes are sequentially increased from the center of the base plate to the outside; the main body, the mounting part and the chassis are of an integrated structure.
In some embodiments of the present application, the plurality of pumping holes are uniformly distributed on the base plate.
In some embodiments of the present application, the plurality of pumping holes are concentrically staggered.
In some embodiments of the present application, the sizes of the plurality of pumping holes sequentially increase from the center of the concentric circle to the outside.
In some embodiments of the present application, the chassis further includes a hollow structure inside, and the hollow structure is communicated with all or part of the plurality of air exhaust holes.
In some embodiments of the present application, the plurality of pumping holes are circular in shape.
In some embodiments of the present application, the plurality of pumping holes have a diameter of 5 to 10 mm.
In some embodiments of the present application, a bending portion is further disposed on one side of the chassis, which is away from the main body, and the bending portion is attached to a side wall of the carrying platform in the reaction chamber.
In some embodiments of the application, the mounting portion is provided with a mounting hole, the mounting portion pass through a bolt with the mounting hole will the reaction chamber protective housing install in the reaction chamber.
Another aspect of the present application also provides a plasma etching apparatus, including: a reaction chamber; the reaction cavity protective shell is arranged in the reaction cavity, the reaction cavity is divided into a reaction part and an air extraction part by a chassis of the reaction cavity protective shell, and the air extraction part is connected with the air extraction pump; the bearing platform is arranged in the middle of the base plate, is matched with the hollow part in the middle of the base plate and is used for bearing the wafer.
The application provides a reaction cavity protective shell and plasma etching equipment, wherein the reaction cavity protective shell is of an integrated structure, is more convenient to install, detach and maintain, and can better protect the inner wall of a reaction cavity from being polluted; in addition a plurality of air suction holes with sizes sequentially increased from the circle center to the edge are formed in the bottom of the reaction cavity protective shell, so that the flow of plasma in the reaction cavity is more stable and uniform, the plasma is uniformly distributed on the surface of the wafer, and the reaction efficiency and the reaction stability are improved.
Drawings
The following drawings describe in detail exemplary embodiments disclosed in the present application. Wherein like reference numerals represent similar structures throughout the several views of the drawings. Those of ordinary skill in the art will understand that the present embodiments are non-limiting, exemplary embodiments, and that the accompanying drawings are for illustrative and descriptive purposes only and are not intended to limit the scope of the present application, as other embodiments may equally accomplish the utility model intent of the present application. It should be understood that the drawings are not to scale. Wherein:
FIG. 1 is a schematic structural diagram of a plasma etching apparatus;
FIG. 2 is a schematic longitudinal sectional view of a reaction chamber protection casing according to an embodiment of the present disclosure;
FIG. 3 is a top view of a reaction chamber containment vessel according to an embodiment of the present disclosure;
FIG. 4 is a schematic view of the structure of the base pan in some embodiments of the present application;
FIG. 5 is a schematic view of the structure of the base pan in other embodiments of the present application;
FIG. 6 is a schematic longitudinal cross-sectional view of a chassis according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a plasma etching apparatus according to an embodiment of the present application.
Detailed Description
The following description is presented to enable any person skilled in the art to make and use the present disclosure, and is provided in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Thus, the present application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings.
Fig. 1 is a schematic structural diagram of a plasma etching apparatus 100.
Referring to fig. 1, the plasma etching apparatus 100 includes: a reaction chamber 110; a susceptor 120 disposed at the center of the reaction chamber 110 for supporting a wafer 130; a cavity liner 140 disposed on an inner wall of the reaction chamber 110 for protecting the inner wall of the reaction chamber 110; a vacuum pumping ring 150 disposed below the chamber liner 140 and connected to the susceptor 120.
However, on the one hand, the chamber liner 140 and the vacuum pumping ring 150 are two separate structures, which are separately installed on the reaction chamber 110, so the requirement for the connection tightness between the chamber liner 140 and the vacuum pumping ring 150 is very high, otherwise the reaction gas may remain in the gap between the chamber liner 140 and the vacuum pumping ring 150, and is difficult to remove, which may affect the use of the chamber liner 140 and the vacuum pumping ring 150. And since the chamber liner 140 and the vacuum pumping ring 150 are separated, they are required to be sequentially installed or removed during installation or removal, which is very troublesome.
On the other hand, the vacuum pumping ring 150 is provided with a plurality of pumping grooves (not shown), the reaction chamber 110 below the vacuum pumping ring 150 is connected to a pumping pump, the reaction chamber 110 above the vacuum pumping ring 150 is pumped by the pumping pump, and the flow of plasma in the chamber is guided by pumping. However, the size and distribution of the plurality of pumping grooves does not take into account the distance from the wafer 130. Therefore, during the pumping process, the suction force of the pumping grooves on the vacuum pumping ring 150 closer to the wafer 130 to the plasma above the wafer is larger, that is, the suction force of the pumping grooves at different positions on the vacuum pumping ring 150 to the plasma above the wafer is not uniform, which still affects the flow of the plasma, and the flow of the plasma is not stable and the distribution of the plasma is not uniform.
In order to solve the problems, the application provides a reaction cavity protective shell and plasma etching equipment, wherein the reaction cavity protective shell is of an integrated structure, is more convenient to install, detach and maintain, and can better protect the inner wall of a reaction cavity from being polluted; in addition a plurality of air suction holes with sizes sequentially increased from the circle center to the edge are formed in the bottom of the reaction cavity protective shell, so that the flow of plasma in the reaction cavity is more stable and uniform, the plasma is uniformly distributed on the surface of the wafer, and the reaction efficiency and the reaction stability are improved.
Fig. 2 is a schematic longitudinal sectional structure view of a reaction chamber protection shell according to an embodiment of the present disclosure. FIG. 3 is a top view of a reaction chamber containment vessel according to an embodiment of the present disclosure. Wherein fig. 2 is a longitudinal sectional view taken along a dotted line in fig. 3.
An embodiment of the present application provides a reaction chamber protective case 200 for a plasma etching apparatus, as shown in fig. 2 and 3, including: a main body 210, which is hollow cylindrical and has a size matching with the reaction chamber; a mounting part 220 positioned on the top of the main body 210 for mounting the reaction chamber protective case 200 in the reaction chamber; the base plate 230 is located at the bottom of the main body 210, the base plate 230 is annular, a plurality of air suction holes are formed in the base plate 230, and the sizes of the air suction holes are sequentially increased from the center of the base plate 230 to the outside; the main body 210, the mounting portion 220 and the bottom plate 230 are of an integrated structure.
The reaction chamber protection housing 200 is cylindrical, and fig. 2 shows a longitudinal sectional view of the reaction chamber protection housing 200 along the diameter of the cylinder.
The reaction chamber protective housing 200 is a unitary, i.e., integrally formed, one-piece structure. The reaction chamber protection shell 200 is a whole body without any gap, and has better protection capability on the inner wall of the reaction chamber. In addition, the reaction chamber protection shell 200 is installed and disassembled as a whole, and the installation and the disassembly are more convenient, faster and easier to maintain.
Referring to fig. 3, in some embodiments of the present application, a mounting hole 221 (not shown in fig. 2) is formed on the mounting portion 220, and the mounting portion 220 mounts the reaction chamber protective housing 200 in the reaction chamber through a bolt and the mounting hole 221. The corresponding position of the reaction chamber is also provided with a screw hole, and the reaction chamber protection shell 200 can be installed in the reaction chamber by connecting the installation hole 221 on the installation part 220 and the screw hole on the reaction chamber through a bolt.
In some embodiments of the present application, the number of the mounting holes 221 is two or four or more. The mounting holes 221 are uniformly distributed on the mounting portion 220.
In some embodiments of the present disclosure, a bending portion 240 is further disposed on a side of the bottom plate 230 away from the main body 210, and the bending portion 240 fits a side wall of the susceptor in the reaction chamber. The bending part 240 is tightly connected to the sidewall of the carrier in the reaction chamber, so as to seal the reaction chamber above the bottom plate 230.
With continued reference to FIG. 3, the base plate 230 is provided with a plurality of bleed holes 231 (not shown in FIG. 2). It should be noted that fig. 3 simply shows the distribution positions of some of the air exhaust holes 231, and the detailed distribution of the plurality of air exhaust holes 231 in the base plate 230 is described later.
The reaction chamber above the base plate 230 can be evacuated through the plurality of pumping holes 231, so that the reaction chamber is in a vacuum condition. In addition, the gas pumping through the pumping holes 231 can also guide the gas flow in the reaction chamber, and thus the plasma flow. However, the arrangement of the pumping holes in some current plasma etching apparatuses is not reasonable enough, for example, the distance between the pumping holes and the center of the bottom plate 230 is not considered. Therefore, during the pumping process, the suction force of the pumping holes closer to the center of the bottom plate 230 to the plasma above the wafer is larger, that is, the suction force of the pumping holes at different positions to the center of the bottom plate 230 is uneven, which still affects the flow of the plasma, and the flow of the plasma is unstable and the distribution of the plasma is uneven.
In view of the above problems, in the technical solution of the present application, the shape, size, and distribution of the plurality of air exhaust holes 231 are particularly set, so that the suction force of the plurality of air exhaust holes 231 to the center of the chassis 230 is uniform, that is, the suction force of the air exhaust holes 231 at different positions at the center of the chassis 230 is equal.
Fig. 4 is a schematic structural view of the chassis in some embodiments of the present application.
Referring to fig. 4, the plurality of pumping holes 231 are circular in shape.
The plurality of pumping holes 231 are uniformly distributed on the base plate 230. The plurality of pumping holes 231 are radially distributed in concentric circles. The sizes of the plurality of pumping holes 231 are sequentially increased from the center of the concentric circle to the outside. That is, the diameter of the suction hole 231 at the edge of the base plate 230 is larger than the diameter of the inner suction hole 231. The diameter of the suction holes 231 at the edge of the base pan 230 is larger, so that the suction force generated by the suction holes at the edge of the base pan 230 is larger, but the suction force is gradually attenuated as the distance becomes larger as the suction holes 231 at the edge of the base pan 230 are farther from the center of the base pan 230. As long as the proper size of the suction holes is set, the suction force of the suction holes 231 at different positions at the center of the chassis 230 can be the same. And then the plurality of air exhaust holes 231 can make the plasma flow more stable and the distribution more uniform.
In some embodiments of the present application, the diameter of the plurality of pumping holes 231 is 5 to 10 mm, such as 6 mm, 7 mm, 8 mm, or 9 mm. The diameter setting of the plurality of pumping holes 231 is completely different from that in the conventional plasma etching apparatus. For the reasons described above, the diameter setting of the plurality of suction holes 231 must be strictly set according to the position of the suction hole 231 on the base plate 230, the distance between the suction hole 231 and the center of the base plate 230, and the power of the suction pump. Otherwise, the suction force of the suction holes 231 at different positions at the center of the base plate 230 cannot be made the same.
The diameter setting of the plurality of pumping holes 231 may be demonstrated with reference to the following: in one embodiment, the inner diameter of the main body 210 of the reaction chamber protection shell 200 is about 400 mm, the outer diameter is about 405 mm, the outer diameter of the bottom plate 230 is about 405 mm, and the inner diameter is about 267 mm. The diameter of the plurality of pumping holes 231 is 5 to 10 mm. Specifically, for example, the diameter of the suction hole 231 closest to the inner ring of the base plate 230 is 5 mm, and the diameter of the suction hole 231 closest to the outer ring of the base plate 230 is 10 mm. The gradient of the change in the diameter of the pumping holes 231, which increases sequentially from the innermost circumference to the outermost circumference, may be set such that the diameter of the pumping holes 231 increases by 0.5 to 1.5 mm (e.g., 0.8 mm, 1 mm, or 1.2 mm, etc.) every 5 to 10 mm (e.g., 6 mm, 7 mm, 8 mm, or 9 mm, etc.) from the center of the base plate 230.
FIG. 5 is a schematic view of a structure of the base pan in accordance with further embodiments of the present application.
The structure shown in fig. 5 is the same as that shown in fig. 4 except for the distribution of the pumping holes 231.
In the structure shown in fig. 4, the plurality of pumping holes 231 are radially distributed. However, there is a gap between the two radial lines, which does not generate a suction force and may cause the plasma to be unevenly distributed. Therefore, in the structure shown in fig. 5, the plurality of pumping holes 231 are distributed in a concentric staggered manner. The two adjacent circles of suction holes 231 are staggered with each other, so that the circle center of the chassis 230 can receive the suction force in all directions on the horizontal plane. The plasma is more uniformly distributed under the guidance of the suction force.
Fig. 6 is a longitudinal sectional view of a chassis according to an embodiment of the present application.
Referring to fig. 6, the base plate 230 further includes a hollow structure 232 inside, and the hollow structure 232 is communicated with all or part of the plurality of air suction holes 231.
In practice, a suction pump for sucking the plurality of suction holes 231 is generally disposed at one side of the reaction chamber. The suction force of the suction hole closer to the suction pump will be greater. This also affects the uniformity of the suction force of the plurality of suction holes 231. Therefore, in the technical solution of the present application, after the plurality of air extracting holes 231 are communicated through the hollow structure 232, the air extracting holes 231 at different positions are communicated, and the suction forces generated by the air extracting holes 231 at different positions are the same.
The application provides a reaction cavity protective shell which is of an integrated structure, is more convenient to install, detach and maintain, and can better protect the inner wall of a reaction cavity from being polluted; in addition a plurality of air suction holes with sizes sequentially increased from the circle center to the edge are formed in the bottom of the reaction cavity protective shell, so that the flow of plasma in the reaction cavity is more stable and uniform, the plasma is uniformly distributed on the surface of the wafer, and the reaction efficiency and the reaction stability are improved.
Fig. 7 is a schematic structural diagram of a plasma etching apparatus according to an embodiment of the present application.
An embodiment of the present application further provides a plasma etching apparatus, as shown in fig. 7, including: a reaction chamber 310; the reaction chamber protection shell 200 is disposed in the reaction chamber 310, the bottom plate 230 of the reaction chamber protection shell 200 divides the reaction chamber 310 into a reaction portion 311 and an air extraction portion 322, and the air extraction portion 322 is connected to an air pump; and the bearing table 320 is arranged in the middle of the base plate 230 and matched with the hollow part in the middle of the base plate 230, and is used for bearing the wafer 30.
The detailed structure of the reaction chamber protective housing 200 has been described above and will not be described herein.
The bending portion 240 of the bottom plate 230 can also be used to fix the wafer 330 and protect the sidewall of the wafer 330.
In operation, the reaction portion 311 of the reaction chamber 310 is sealed. The reaction part 311 may be pumped to a vacuum state by a suction pump connected to the suction part 322. In the reaction process, the air pump continuously pumps air, and the plasma above the wafer 330 can be guided to flow through the air pumping holes 231 on the base plate 230, so that the plasma flows more stably and is distributed more uniformly, and further, the reaction efficiency and stability are improved.
The application provides a reaction cavity protective shell and plasma etching equipment, wherein the reaction cavity protective shell is of an integrated structure, is more convenient to install, detach and maintain, and can better protect the inner wall of a reaction cavity from being polluted; in addition a plurality of air suction holes with sizes sequentially increased from the circle center to the edge are formed in the bottom of the reaction cavity protective shell, so that the flow of plasma in the reaction cavity is more stable and uniform, the plasma is uniformly distributed on the surface of the wafer, and the reaction efficiency and the reaction stability are improved.
In view of the above, it will be apparent to those skilled in the art upon reading the present application that the foregoing application content may be presented by way of example only, and may not be limiting. Those skilled in the art will appreciate that the present application is intended to cover various reasonable variations, adaptations, and modifications of the embodiments described herein, although not explicitly described herein. Such alterations, modifications, and variations are intended to be within the spirit and scope of the exemplary embodiments of this application.
It is to be understood that the term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present.
Similarly, it will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, the term "directly" means that there are no intervening elements. It will be further understood that the terms "comprises," "comprising," "includes" or "including," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be further understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments may be termed a second element in other embodiments without departing from the teachings of the present application. The same reference numerals or the same reference characters denote the same elements throughout the specification.
Further, the present specification describes example embodiments with reference to idealized example cross-sectional and/or plan and/or perspective views. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of exemplary embodiments.
Claims (10)
1. A reaction chamber protective housing for a plasma etching apparatus, comprising:
the main body is in a hollow cylindrical shape, and the size of the main body is matched with that of the reaction cavity;
the mounting part is positioned at the top of the main body and is used for mounting the reaction cavity protective shell in the reaction cavity;
the base plate is positioned at the bottom of the main body and is annular, a plurality of air suction holes are formed in the base plate, and the sizes of the air suction holes are sequentially increased from the center of the base plate to the outside;
the main body, the mounting part and the chassis are of an integrated structure.
2. The reaction chamber containment vessel of claim 1 wherein the plurality of pumping holes are uniformly distributed in the bottom head.
3. The reaction chamber protective case of claim 2 wherein the plurality of pumping holes are concentrically staggered.
4. The reaction chamber protective housing of claim 3 wherein the plurality of pumping holes increase in size sequentially from the center of the concentric circles to the outside.
5. The reaction chamber protective case of claim 1, wherein the interior of the base pan further comprises a hollow structure, and the hollow structure is in communication with all or part of the plurality of pumping holes.
6. The reaction chamber protective case of claim 1 wherein the plurality of pumping holes are circular in shape.
7. The reaction chamber protective housing of claim 6 wherein the plurality of pumping holes have a diameter of 5 to 10 mm.
8. The protective shell of claim 1, wherein a bending portion is further disposed on a side of the bottom plate away from the main body, and the bending portion is attached to a side wall of a carrier in the reaction chamber.
9. The reaction chamber protective housing of claim 1, wherein the mounting portion is provided with a mounting hole, the mounting portion mounting the reaction chamber protective housing in the reaction chamber by a bolt and the mounting hole.
10. A plasma etching apparatus, comprising:
a reaction chamber;
the reaction chamber protective housing according to any one of claims 1 to 9, disposed in the reaction chamber, a bottom plate of the reaction chamber protective housing divides the reaction chamber into a reaction portion and an air extraction portion, and the air extraction portion is connected to an air pump;
and the bearing platform is arranged in the middle of the base plate, is matched with the hollow part in the middle of the base plate and is used for bearing the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222551565.1U CN218123349U (en) | 2022-09-26 | 2022-09-26 | Reaction chamber protective housing and plasma etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222551565.1U CN218123349U (en) | 2022-09-26 | 2022-09-26 | Reaction chamber protective housing and plasma etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218123349U true CN218123349U (en) | 2022-12-23 |
Family
ID=84496644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222551565.1U Active CN218123349U (en) | 2022-09-26 | 2022-09-26 | Reaction chamber protective housing and plasma etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218123349U (en) |
-
2022
- 2022-09-26 CN CN202222551565.1U patent/CN218123349U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5361189B2 (en) | Method and apparatus for improved baffle plate | |
| KR102002083B1 (en) | Precleaning chamber and plasma processing apparatus | |
| CN101990789B (en) | Lower liner with integrated flow equalizer and improved conductance | |
| TWI514461B (en) | Movable ground ring for a plasma processing chamber | |
| TWI427449B (en) | Etching chamber having flow equalizer and lower liner | |
| CN102969215B (en) | Low pitch edge ring for plasma | |
| JP6581602B2 (en) | In-line DPS chamber hardware design that allows axial symmetry for improved flow conductance and uniformity | |
| CN101577216B (en) | Plasma reactor | |
| CN100536082C (en) | Plasma processing apparatus | |
| KR20010052314A (en) | Turbo-molecular pump with metal matrix composite rotor and stator | |
| WO2014130230A1 (en) | Tunable gas delivery assembly with internal diffuser and angular injection | |
| KR20070026210A (en) | Suspension for showerhead in process chamber | |
| TW201606844A (en) | Baffle and substrate treating apparatus including the same | |
| CN104217943A (en) | Apparatus for processing a semiconductor workpiece | |
| CN218123349U (en) | Reaction chamber protective housing and plasma etching equipment | |
| CN115472484A (en) | Reaction chamber protective housing and plasma etching equipment | |
| CN113972124B (en) | Grounding assembly, plasma processing device and working method thereof | |
| KR20220047655A (en) | High Conductivity Bottom Shield for Process Chambers | |
| KR20080025509A (en) | Semiconductor manufacturing apparatus | |
| KR102555339B1 (en) | Apparatus for improving flow uniformity in process chambers | |
| KR20220050218A (en) | High-conductivity inner shield for process chambers | |
| KR102495469B1 (en) | batch processing chamber | |
| CN217214642U (en) | Processing device and dry etching equipment | |
| KR100511800B1 (en) | Semiconductor manufacturing apparatus | |
| US11492697B2 (en) | Apparatus for improved anode-cathode ratio for rf chambers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |