CN217933805U - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN217933805U CN217933805U CN202222024279.XU CN202222024279U CN217933805U CN 217933805 U CN217933805 U CN 217933805U CN 202222024279 U CN202222024279 U CN 202222024279U CN 217933805 U CN217933805 U CN 217933805U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The embodiment of the utility model provides a solar cell and photovoltaic module is related to the photovoltaic field, solar cell includes: a substrate doped with one of an N-type dopant element or a P-type dopant element, the substrate having an aluminum diffusion layer therein; the aluminum-silicon alloy layer is at least positioned on the surface of the back surface of the aluminum diffusion layer far away from the substrate, and the surface of the aluminum-silicon alloy layer is exposed out of the substrate; the passivation layer is positioned on the front surface of the substrate and is also positioned on the surface of the aluminum-silicon alloy layer; the electrodes are arranged along the first direction and penetrate through the passivation layer to be in electric contact with the aluminum-silicon alloy layer; the tunneling dielectric layer is positioned on the back surface of the substrate, the doped conductive layer is positioned on the surface of the tunneling dielectric layer far away from the back surface of the substrate, and the doped conductive layer is doped with the other one of N-type doped elements or P-type doped elements; the back electrode is in contact with the doped conducting layer, and at least the photoelectric conversion efficiency of the solar cell can be improved.
Description
Technical Field
The embodiment of the utility model provides a relate to the photovoltaic field, in particular to solar cell and photovoltaic module.
Background
The causes affecting the performance of the solar cell (e.g., photoelectric conversion efficiency) include optical loss including cell surface reflection loss, shadow loss of contact grid lines, non-absorption loss of long wavelength band, and the like, and electrical loss including loss of photocarrier recombination at the surface and in the body of a semiconductor, contact resistance of a semiconductor and metal grid lines, contact resistance of a metal and a semiconductor, and the like.
In order to reduce the electrical loss of the solar cell, a tunneling oxide layer passivation metal contact structure can be formed on the surface of the cell. The tunneling oxide layer passivation metal contact structure consists of an ultrathin tunneling dielectric layer and a doped conducting layer, and can provide good surface passivation, so that metal contact composite current is reduced, and open-circuit voltage and short-circuit current of a battery are improved. The tunneling oxide layer passivation metal contact structure can optimize the performance of the solar cell, but factors influencing the performance of the solar cell are still more, and the development of the efficient passivation contact solar cell has important significance.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a solar cell and photovoltaic module have at least and do benefit to the photoelectric conversion efficiency who promotes solar cell.
According to the utility model discloses some embodiments, the embodiment of the utility model provides an aspect provides a solar cell, include: the substrate is provided with a front surface and a back surface which are opposite, one of N-type doping elements or P-type doping elements is doped in the substrate, and an aluminum diffusion layer is arranged in the substrate; the aluminum-silicon alloy layer is at least positioned on the surface of the back surface of the aluminum diffusion layer far away from the substrate, and the surface of the aluminum-silicon alloy layer is exposed out of the substrate; the passivation layer is positioned on the front surface of the substrate and is also positioned on the surface of the aluminum-silicon alloy layer; the electrodes are arranged along the first direction and penetrate through the passivation layer to be in electric contact with the aluminum-silicon alloy layer; the tunneling dielectric layer is positioned on the back surface of the substrate, the doped conducting layer is positioned on the surface of the tunneling dielectric layer far away from the back surface of the substrate, and the other one of an N-type doped element and a P-type doped element is doped in the doped conducting layer; and the back electrode is in contact with the doped conducting layer.
In some embodiments, the top surface of the aluminum-silicon alloy layer is flush with the front surface of the substrate.
In some embodiments, the top surface of the aluminum-silicon alloy layer is higher than the front surface of the substrate.
In some embodiments, the width of the aluminum-silicon alloy layer along the first direction is equal to or greater than the width of the contact surface of the aluminum-silicon alloy layer and the electrode.
In some embodiments, the aluminum-silicon alloy layer has a width in a range of 1um to 100um.
In some embodiments, the aluminum-silicon alloy layer has a thickness in a range from 1 μm to 5 μm.
In some embodiments, the aluminum diffusion layer surrounds the aluminum-silicon alloy layer, the substrate exposes a surface of the aluminum diffusion layer, and the passivation layer is also located on the surface of the aluminum diffusion layer.
In some embodiments, the aluminum diffusion layer has a diffusion depth of aluminum ions of 1 μm to 5 μm.
In some implementations, the passivation layer includes a silicon oxide layer, an aluminum oxide layer, a silicon oxynitride layer, and a silicon nitride layer, which are stacked.
According to the utility model discloses some embodiments, the embodiment of the utility model provides an on the other hand still provides a photovoltaic module, include: a battery string formed by connecting a plurality of solar cells according to any one of the above embodiments; the packaging adhesive film is used for covering the surface of the battery string; and the cover plate is used for covering the surface of the packaging adhesive film, which is deviated from the battery string.
The embodiment of the utility model provides a technical scheme has following advantage at least:
the embodiment of the utility model provides a solar cell, through deposit tunneling dielectric layer and doping conducting layer at the battery back, the doping element type of doping conducting layer is different with the doping element type of basement to make doping conducting layer and basement constitution PN junction, solar cell is back of the body knot solar cell promptly, and the tunneling dielectric layer constitutes passivation contact structure with the doping conducting layer. The PN junction can cover the whole back of the battery, so that the maximum utilization of incident light can be ensured, and the short-circuit current of the battery is improved. The front surface of the battery is not provided with the boron diffusion layer, and the front metal contact area of the battery is sintered by adopting aluminum-containing slurry to form a local aluminum diffusion layer and an aluminum-silicon alloy layer so as to generate a local front surface field, thereby avoiding the body defect caused by a high-temperature process and the boron-oxygen defect caused by a boron diffusion process while ensuring good metal-semiconductor ohmic contact. The formed aluminum-silicon alloy layer can weaken the aluminum piercing phenomenon, thereby ensuring the integrity of the textured structure on the surface of the substrate and reducing the surface recombination rate of the front surface of the substrate.
Drawings
One or more embodiments are illustrated by the accompanying drawings in the drawings, which correspond to the figures in the drawings, and the illustrations are not to be construed as limiting the embodiments, unless otherwise specified, and the drawings are not to scale; in order to more clearly illustrate the technical solutions of the embodiments of the present invention or the conventional technologies, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present invention.
Detailed Description
As can be seen from the background art, the photoelectric conversion efficiency of the solar cell in the prior art is not good enough.
Analysis finds that one reason for poor photoelectric conversion efficiency of the solar cell is that when the substrate is a P-type substrate, a front emitter is generally prepared by adopting a front B diffusion process, so that a PN junction is formed on the front of the solar cell, and then high-concentration B diffusion causes the recombination of carriers on the front surface of the cell to be serious; and the adoption of the local high-concentration B diffusion of the metal contact area on the front surface and the low-concentration B diffusion of the non-contact area can cause the reduction of the effective PN junction area of the solar cell and the reduction of the short-circuit current of the cell, thereby leading the photoelectric conversion efficiency of the solar cell to be poor.
The embodiment of the utility model provides a solar cell and photovoltaic module passes through deposit tunneling dielectric layer and doping conducting layer at the battery back, and the doping element type of doping conducting layer is different with the doping element type of basement to make doping conducting layer and basement constitute the PN junction, solar cell is back junction solar cell promptly, and the tunneling dielectric layer constitutes passivation contact structure with the doping conducting layer. The PN junction can cover the whole back of the battery, so that the maximum utilization of incident light can be ensured, and the short-circuit current of the battery is improved. The front surface of the battery is not provided with the boron diffusion layer, and the front metal contact area of the battery is sintered by adopting aluminum-containing slurry to form a local aluminum diffusion layer and an aluminum-silicon alloy layer so as to generate a local front surface field, thereby avoiding the body defect caused by a high-temperature process and the boron-oxygen defect caused by a boron diffusion process while ensuring good metal-semiconductor ohmic contact. The formed aluminum-silicon alloy layer can weaken the aluminum puncture phenomenon, thereby ensuring the integrity of the textured structure on the surface of the substrate and reducing the surface recombination rate of the front surface of the substrate.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the various embodiments of the invention, numerous technical details are set forth in order to provide a better understanding of the invention. However, the claimed invention can be practiced without these specific details and with various changes and modifications based on the following examples.
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention.
According to some embodiments of the utility model, the embodiment of the utility model provides an aspect provides a solar cell, refers to fig. 1, and solar cell includes: a substrate 100, the substrate 100 having a front surface 101 and a back surface 102 opposite to each other, the substrate 100 being doped with one of an N-type dopant element and a P-type dopant element, the substrate 100 having an aluminum diffusion layer 111 therein; an aluminum-silicon alloy layer 110, wherein the aluminum-silicon alloy layer 110 is at least positioned on the surface of the aluminum diffusion layer 111 away from the back surface 102 of the substrate 100, and the surface of the substrate 100 exposed from the aluminum-silicon alloy layer 110; a passivation layer, which is located on the front surface 101 of the substrate 100 and is also located on the surface of the aluminum-silicon alloy layer 110; the electrodes 142, the electrodes 142 are arranged along the first direction X, and the electrodes 142 penetrate through the passivation layer and are electrically contacted with the aluminum-silicon alloy layer 110; tunnel dielectric layer 120 and doped conductive layer 130, tunnel dielectric layer 120 is located on back surface 102 of substrate 100, doped conductive layer 130 is located on the surface of tunnel dielectric layer 120 away from back surface 102 of substrate 100, and doped conductive layer 130 is doped with the other one of N-type doping element or P-type doping element; the back electrode 141, the back electrode 141 contacts with the doped conducting layer 130.
In some embodiments, the solar cell is a Tunnel Oxide Passivated Contact (TOPCon) cell, which may include a double-sided Tunnel Oxide Passivated Contact cell or a single-sided Tunnel Oxide Passivated Contact cell.
The substrate 100 is a region that absorbs incident photons to generate photo-generated carriers. In some embodiments, the substrate 100 is a silicon substrate 100, which may include one or more of single crystal silicon, polycrystalline silicon, amorphous silicon, or microcrystalline silicon. In other embodiments, the material of the substrate 100 may also be silicon carbide, an organic material, or a multi-component compound. The multi-element compound may include, but is not limited to, perovskite, gallium arsenide, cadmium telluride, copper indium selenide, and like materials. Illustratively, the substrate 100 of the present invention is a single crystal silicon substrate.
In some embodiments, for a single-sided battery, the front side 101 of the substrate 100 is a light-receiving side, and the back side 102 of the substrate 100 is a backlight side; for a bifacial cell, both the front side 101 and the back side 102 may serve as light-receiving surfaces to absorb incident light. The substrate 100 has a doping element therein, the type of the doping element is N-type or P-type, the N-type element may be a group v element such As phosphorus (P), bismuth (Bi), antimony (Sb), or arsenic (As), and the P-type element may be a group iii element such As boron (B), aluminum (Al), gallium (Ga), or indium (In). And the resistivity of the substrate 100 is 0.5 Ω · cm to 3 Ω · cm, alternatively, the resistivity of the substrate 100 is 0.5 Ω · cm to 2 Ω · cm, and the resistivity of the substrate 100 may be specifically 0.53 Ω · cm, 0.89 Ω · cm, 1.29 Ω · cm, 1.53 Ω · cm, or 1.86 Ω · cm. For example, when the substrate 100 is a P-type substrate, the type of the doped element therein is P-type. For another example, when the substrate 100 is an N-type substrate, the type of the doped element therein is N-type. The embodiment of the present invention uses the substrate 100 as a P-type substrate as an example.
In some embodiments, the front side 101 has a textured structure, which can enhance internal reflection of incident light, thereby reducing optical loss of incident light. The textured structure can be prepared by a solution texturing process or a laser texturing process. The textured structure may include a pyramid structure, a pyramid-like structure, or any other inclined structure with a high aspect ratio. The back side 102 has a polished face structure. The polishing treatment can be performed by using an alkaline solution or an acidic solution, so that the back surface 102 of the substrate 100 is a polished surface, and the polished surface can increase the internal reflection of light, reduce the recombination rate of the surface of a current carrier, and improve the photoelectric conversion efficiency of the cell. It is understood that when the back surface 102 of the substrate 100 is polished, the polishing degree of the polished surface, i.e. the etching degree of the textured structure of the back surface 102, can be controlled by controlling the process parameters of the polishing process. In a specific example, the back surface 102 of the substrate 100 is a complete plane, i.e., without significant raised structures. In another specific example, the rear surface 102 of the substrate 100 still has a portion of the raised mesa structure, and the raised mesa structure may be regarded as a textured structure with a portion of the thickness being etched, and the top surface of the textured structure forms a mesa.
In some embodiments, the content of the silicon element in the al-si alloy layer 110 is 5% to 15%, that is, the al-si alloy layer 110 is also an alloy in nature, that is, the al-si alloy layer 110 is also a metal layer, and only a part of the silicon element is doped in the alloy, and the al-si alloy layer 100 serves as a bridge for the electrode 142 to contact with the substrate 100, so that the threshold voltage between the electrode 142 (metal material) and the substrate 100 (semiconductor material) is reduced, thereby reducing the contact resistance between the electrode 142 and the substrate 100, so that carriers can easily drift from the substrate 100 to the al-si alloy layer 110, and are collected by the electrode 142 in a collecting manner, which is beneficial to increasing the open-circuit voltage and the short-circuit. In the process of forming the al-si alloy layer 110, due to the structural difference between the al atoms and the si atoms, the lattice mismatch formed by the combination of the al atoms and the si atoms may cause stress, and in the molten state of al and si, the solubility of the impurity metal in al is higher than that of si, so that the impurity metal drifts from the substrate to the al-si alloy layer, and a stress gettering center is formed in the al-si alloy layer to improve the gettering capability of the front surface 101, thereby reducing the front surface recombination rate of the surface.
In some embodiments, the base of the aluminum diffusion layer 111 and the material composition of the substrate 100 are also included, i.e., the aluminum diffusion layer 111 is essentially any one or more of single crystal silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, or a multi-compound. The aluminum diffusion layer 111 has aluminum ions and P-type element doped in the substrate, and the aluminum diffusion layer 111 has a doping concentration of 7 × 10 18 cm -3 ～2×10 19 cm -3 The doping elements include aluminum ions and P-type elements. The doping concentration of the aluminum diffusion layer 111 is greater than that of the substrate 100 except the aluminum diffusion layer 111 due to the specifically diffused aluminum ions in the aluminum diffusion layer 111, and for the electrode 142, the region contacted by the electrode 142 is a heavily doped region, thereby enabling the substrate 100 to be electrically connected with the electrode 142Good ohmic contact is formed between the electrodes 142, and the contact recombination rate between the metal electrode and the substrate is favorably reduced, so that the photoelectric conversion efficiency of the cell is improved; for the front surface 101 of the substrate 100, the region directly opposite to the non-electrode 142 does not have a heavily doped region, so that defect recombination centers formed by high-concentration doped ions can be reduced, and optical loss is reduced; for the back surface 102 of the substrate 100, a high-low junction is formed on the front surface of the substrate, negative space charges are formed on the interface of the aluminum diffusion layer 111, positive space charges are formed on the front surface 101 of the substrate 100, the substrate 100 and the aluminum diffusion layer 111 form a built-in electric field, electron-hole pairs generated on the front surface 101 of the substrate 100 accelerate diffusion towards the PN junction direction of the back surface, and the collection efficiency of photogenerated carriers is improved, so that the efficiency of the cell is improved, and the spectral response of a long-wave part is also improved.
In some embodiments, the width of the al-si alloy layer 110 along the first direction X is equal to or greater than the width of the contact surface of the al-si alloy layer 110 and the electrode 142; the width ratio of the aluminum-silicon alloy layer 110 to the contact surface of the electrode 142 is 100% to 200%, and optionally, the width ratio of the aluminum-silicon alloy layer 110 to the contact surface of the aluminum-silicon alloy layer 110 to the electrode 142 is 100% to 150%, specifically, 100%, 123%, 144%, or 150%. The width ratio can ensure that the contact areas of the electrode 142 and the substrate 100 are heavily doped areas, thereby reducing the contact resistance, reducing the optical radiation loss caused by high-concentration doping elements and improving the cell efficiency. In a specific example, the width of the al-si alloy layer 110 is equal to the width of the contact surface between the al-si alloy layer 110 and the electrode 142.
In some embodiments, the width of the aluminum-silicon alloy layer 110 and the thickness of the aluminum-silicon alloy layer 110 are related to the width of the electrode 142; the thickness of the al-si alloy layer 110 is in a range of 1 μm to 5 μm, optionally the thickness of the al-si alloy layer 110 is in a range of 1 μm to 4 μm, and the thickness of the al-si alloy layer 110 is 1.3 μm, 2.1 μm, 3.2 μm, or 3.9 μm. The thickness of the al-si alloy layer 110 should not be too small, the al-si alloy layer 110 receives incident light and generates high internal surface reflection in the al-si alloy layer 110, and when the thickness of the al-si alloy layer 110 is too large or the thickness of the substrate 100 is thin, the generation of electron-hole pairs is closer to a PN junction, thereby facilitating the collection of carriers by the PN junction and improving short-circuit current. Meanwhile, the thickness of the al-si alloy layer 110 is large, so that the bottom surface of the al-si alloy layer 110 is close to the back surface 102 of the substrate 100, and there is a possibility that aluminum ions diffuse into the film layer on the back surface, which affects the PN junction and the high-low junction. The width of the aluminum-silicon alloy layer 110 is 1um to 100um, optionally, the width of the aluminum-silicon alloy layer 110 is 20um to 80um, and the width of the aluminum-silicon alloy layer may be specifically 22um, 43um, 59um, 68um or 79um.
In some embodiments, the top surface of the aluminum-silicon alloy layer 110 is flush with the front surface 101 of the substrate 100. In other embodiments, the top surface of the aluminum-silicon alloy layer is higher than the front surface of the substrate. Since aluminum can react with the silicon oxide layer 103 to form silicon and aluminum oxide, the aluminum-silicon alloy layer can be partially converted from the material of the silicon oxide layer, i.e., the top surface of the aluminum-silicon alloy layer is higher than the front surface of the substrate.
In some embodiments, the aluminum diffusion layer 111 surrounds the aluminum-silicon alloy layer 110, the substrate 100 exposes a surface of the aluminum diffusion layer 111, and the passivation layer is also located on the surface of the aluminum diffusion layer 111. The diffusion depth of the aluminum diffusion layer 111 is 1 μm to 5 μm. Optionally, the diffusion depth of the aluminum diffusion layer 111 is 1 μm to 3 μm; the diffusion depth of the aluminum diffusion layer 111 may be 1.18 μm, 2.03 μm, 2.59 μm, or 2.83 μm. The depth range of the aluminum diffusion layer 111 can avoid the tunneling effect caused by the high doping of the aluminum diffusion layer 111, that is, the aluminum ions of the aluminum diffusion layer 111 cannot diffuse to the surface of the substrate 100 in contact with the tunneling dielectric layer 120, so that the open-circuit voltage of the solar cell can be increased, and the photoelectric conversion efficiency of the solar cell can be improved.
In some embodiments, tunneling dielectric layer 120 reduces the interface state density between substrate 100 and doped conductive layer 130 through chemical passivation, reducing minority carrier and hole recombination, which is beneficial to reducing Jo load current; the tunneling dielectric layer 120 can enable majority carriers to tunnel into the doped conductive layer 130, and then the majority carriers are laterally transmitted in the doped conductive layer 130 and collected by the back electrode 141, so that the contact composite current of the back electrode 141 and the doped conductive layer 130 is greatly reduced, and the open-circuit voltage and the short-circuit current of the solar cell are improved.
In some embodiments, the material of tunnel dielectric layer 120 may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, intrinsic amorphous silicon, intrinsic polysilicon, and other dielectric materials with tunneling effect. The thickness of tunneling dielectric layer 120 may be 0.5nm to 3nm, optionally, the thickness of tunneling dielectric layer 120 is 0.5nm to 2nm, and further, the thickness of tunneling dielectric layer 120 is 0.5nm to 1.5nm. Tunneling dielectric layer 120 may have a thickness of 0.5nm, 0.9nm, 1.25nm, or 1.5nm.
The material of the doped conductive layer 130 may be at least one of a polycrystalline semiconductor, an amorphous semiconductor, or a microcrystalline semiconductor, and preferably, the material of the doped conductive layer includes at least one of polycrystalline silicon, amorphous silicon, or microcrystalline silicon. The thickness range of the doped conductive layer 130 is 40nm to 150nm, optionally, the thickness range of the doped conductive layer 130 is 60nm to 90nm, and the thickness range of the doped conductive layer 130 can ensure that the optical loss of the doped conductive layer 130 is small and the interface passivation effect of the tunneling dielectric layer 120 is good, so that the battery efficiency is improved. Illustratively, in the present invention, the material of the doped conductive layer 130 is polysilicon, and the thickness of the doped conductive layer 130 is 80nm.
In some embodiments, the doping element type of the substrate 100 is a P-type doping element, and the doping element type of the doped conductive layer 130 is an N-type doping element. Thus, a PN junction is formed between the substrate 100 and the doped conductive layer 130, and a PN junction is formed on the back surface 102, so that optical loss caused by forming a highly doped emitter on the front surface can be avoided, electrical loss caused by forming a lowly doped emitter can also be avoided, and the photoelectric conversion efficiency of the solar cell can be improved. It can be understood that, due to the diffusivity of the doping element, a doping region of the same type as the doping element of the doped conductive layer 130 can be formed on the back surface of the substrate 100, and when the doping concentration of the doping region is less than the doping concentration of the doped conductive layer 130, a high-low junction is formed between the doping region and the doped conductive layer 130, so that a built-in electric field is formed between the doping region and the doped conductive field 130, a positive space charge is formed on the surface of the doped conductive layer 130 with higher doping, and a negative space charge is formed on the surface of the doped region with lower doping, so that the P-type doping element in the substrate can easily drift to the doped conductive layer 130 with higher doping, which is beneficial to increase the output current of the battery.
In some embodiments, the doped conductive layer 130 has a second doped region therein extending through the thickness of the doped conductive layer 130, the doping concentration of the second doped region is greater than the doping concentration of the doped conductive layer 130 except for the second doped region, and the back electrode 14 is in contact with the doped conductive layer 130 of the second doped region 131; the second doped region is opposite to the doped region formed on the substrate. The doping concentration of the second doping region is greater than or equal to that of the doping region. For the region directly opposite to the back electrode 141, a local heavily doped region (the second doped region 131) is formed, and the high doping of the contact interface between the back electrode 141 and the doped conductive layer 130 destroys the rectification characteristic caused by the schottky barrier of the doped conductive layer 130, which is beneficial to reducing the contact resistance between the back electrode 141 and the doped conductive layer 130. The doping concentration of the non-opposite region of the back electrode 141 is low, so that the optical loss caused by too high doping element concentration can be reduced, and the cell efficiency is improved. The tunnel dielectric layer 120 has a third doped region penetrating the thickness of the tunnel dielectric layer 120, the third doped region is in contact with the doped region and the second doped region, and the doped region, the second doped region and the third doped region are aligned and have the same type of doping element.
In some embodiments, tunnel dielectric layer 120 and the conductive film are formed by one or more of Low Pressure Chemical Vapor Deposition (LPCVD) or plasma enhanced Chemical Vapor Deposition (pecvd). The formed conductive film is subjected to doping treatment to form a doped conductive layer 130. The doped conductive layer may be formed by LPCVD, followed by diffusion or ion implantation doping, and may be an intrinsic polysilicon layer. In other embodiments, the doped initial conductive film is deposited by PECVD and then annealed to form the doped conductive layer, and the material of the initial conductive film may be amorphous silicon or microcrystalline silicon.
In some embodiments, the al-si alloy layers 110 under the doped regions or electrodes 142 under the different back electrodes 141 are disposed at equal intervals, so that the current collection of the doped regions and the al-si alloy layers 110 is uniform. Alternatively, the doped regions under the same back electrode 141 and the al-si alloy layers 110 under the electrode 142 are disposed at equal intervals, so that the current collection of the doped regions and the al-si alloy layers 110 is more uniform.
In some embodiments, the solar cell further includes a rear passivation layer 107, the rear passivation layer 109 is located on the surface of the doped conductive layer 130, and the back electrode 141 penetrates the rear passivation layer 109 to contact the doped conductive layer 130. The post-passivation layer 107 may reduce recombination of metal regions generated by the contact of the back electrode 141 with the substrate 100, thereby improving the cell efficiency. The rear passivation layer 107 may have a single-layer structure or a stacked-layer structure, and the material of the rear passivation layer 107 may be one or more of silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbonitride, titanium oxide, hafnium oxide, or aluminum oxide.
The back electrode 141 is a grid line of the solar cell for collecting and summing the current of the solar cell. The back electrode 141 may be sintered from a fire-through type paste. The contact of the back electrode 141 and the doped conductive layer 130 may be a local contact or a complete contact. The material of the back electrode 141 may be one or more of aluminum, silver, gold, nickel, molybdenum, or copper. In some cases, the back electrode 141 is referred to as a fine gate line or a finger gate line to distinguish it from a main gate line or a bus bar.
In some embodiments, the passivation layer includes a silicon oxide layer 103, an aluminum oxide layer 104, a silicon oxynitride layer 105, and a silicon nitride layer 106, which are stacked, and the silicon oxide layer 103 is located on the front surface 101 of the substrate 100. The silicon oxide layer 103 reduces the interface state density between the silicon substrate 100 and the aluminum oxide layer 103 through chemical passivation, increases the lifetime of minority carriers, and thus may reduce the contact resistance between the passivation layer including the aluminum oxide layer and the silicon substrate. The aluminum oxide layer 104 has a high fixed negative charge density Q on the contact surface with the substrate 100 f (Q f About 10 12 ～10 13 cm -2 ) An electric field with negative polarity is formed on the surface of the substrate 100, and a good field effect passivation effect can be provided for the P-type surface by shielding minority carriers and electrons with the same polarity on the P-type silicon surface. In addition, the alumina layer has a very low interface state defect density (Dit) andthe chemical passivation effect is good, and the hydrogen atoms can be used as a high-efficiency hydrogen atom storage to provide sufficient hydrogen atoms in the subsequent heat treatment process, so that the dangling bonds on the surface of the substrate 100 are saturated. The band gap of the aluminum oxide is 6.4eV, and a part of sunlight can be allowed to pass through the rear passivation layer consisting of the aluminum oxide layer to reach the surface of the substrate 100, so that the photoelectric conversion efficiency of the solar cell is improved. The silicon oxynitride layer 105 and the silicon nitride layer 106 may serve as an anti-reflective layer to reduce light reflection, thereby improving photoelectric conversion efficiency.
In some embodiments, the silicon oxide layer 103 may be formed by a thermal oxidation method, and particularly, the front surface 101 and the back surface 102 of the substrate 100 are oxidized by oxygen to form the silicon oxide layer 103 with a thickness of 10nm to 80nm by placing the substrate 100 at 900 to 1100 ℃. The silicon oxide layer 103 formed by the thermal oxidation method has good stability and compactness, can reduce dangling bonds on the surface of the substrate so as to reduce the density of interface states between the substrate and the silicon oxide layer, can well control interface traps and fixed charges, and is favorable for improving the passivation effect. The thermal oxidation method can be divided into dry oxygen oxidation, water vapor oxidation and wet oxygen oxidation according to the difference of the oxidation atmosphere. In other embodiments, silicon oxide can be deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) using silane and nitrous oxide, where the PECVD process produces silicon oxide with a faster growth rate and a thicker depositable silicon oxide film. The aluminum oxide layer 104, the silicon oxynitride layer 105, and the silicon nitride layer 106 are formed by PECVD or LPCVD.
The electrode 142 may be sintered from a fire-through slurry. The contact of the electrode 142 with the aluminum-silicon alloy layer 110 may be a localized contact or a complete contact. The material of the electrode 142 may be one or more of aluminum, silver, nickel, gold, molybdenum, or copper. In some cases, the electrode 142 is referred to as a fine gate line or a finger gate line to distinguish it from a main gate line or a bus bar.
In some embodiments, the electrode 142 and the back electrode 141 may be formed by a screen printing process. The paste in the screen printing process is aluminum-containing silver paste, the aluminum-containing paste can form good contact with the substrate 100, the silver self-resistance of the silver-containing paste is low, and the contact resistance of the electrode 141 and the substrate 100 is reduced. In other embodiments, a local contact groove is formed by using a laser grooving process, the slurry for forming the electrode or the back electrode is positioned in the contact groove, and then the electrode or the back electrode is formed through an annealing treatment.
In some embodiments, when the sintering temperature reaches the eutectic temperature, aluminum atoms and silicon atoms diffuse into each other at the interface of the aluminum layer and the substrate, and the melting rate of silicon and aluminum increases with time and temperature, and finally an aluminum-silicon alloy layer 110 is formed at the whole interface of the contact, and an aluminum diffusion layer 111 is formed in the substrate. The conductive mechanism between the aluminum-silver-containing slurry and the substrate 100 is that the aluminum-silver-containing slurry belongs to a sintering-infiltration type conductive slurry, only an inorganic adhesive and a conductive filler are left in the slurry after low-temperature drying and high-temperature sintering, the inorganic adhesive plays a role in connection, and the high-temperature sintering-infiltration conductive slurry shrinks after being cooled by high-temperature sintering, so that conductive particles are contacted with each other, and thus the conductive particles are conductive. There is another theory of conduction, namely "tunneling effect", whose main contents are: in addition to direct contact of the conductive particles, current emission occurs due to thermal vibration, depending on electron channels caused by migration of electrons between the conductive particles, or due to a high-intensity electric field between the conductive particles. When the distance between the conductive particles reaches 1nm or less, charge transfer due to tunneling effect is sharply increased, and resistivity is sharply decreased, thereby forming a conductive path for conduction, so that the conductive path between the electrode and the substrate is formed.
The embodiment of the utility model provides an among the solar cell's technical scheme, form tunnel dielectric layer 120 and doping conducting layer 130 through back 102 at basement 100, and the doping element type that dopes conducting layer 130 is opposite with the doping element type of basement 100 for constitute the PN junction between doping conducting layer 130 and the basement 100, solar cell is back junction solar cell promptly, and tunnel dielectric layer 120 combines with doping conducting layer 130 to constitute passivation contact structure. The doped conductive layer 120 can cover the entire back surface 102 of the substrate, the PN junction formed between the substrate 100 and the doped conductive layer 130 can cover the entire back surface of the cell, maximum utilization of incident light can be ensured, short-circuit current and open-circuit voltage of the cell can be increased, the width of the back electrode 141 can be optimized to reduce the series resistance of the cell, and the front light trapping structure of the back junction solar cell can be optimized to obtain a lower front surface recombination rate and a lower reflectivity. The passivation contact structure can reduce the recombination rate of surface carriers of the substrate and improve the photoelectric conversion efficiency of the solar cell.
In addition, an aluminum-silicon alloy layer 110 and an aluminum diffusion layer 111 are formed on the front surface of the substrate 100, the front surface 101 of the cell is free of a boron diffusion layer, and a front metal contact area of the cell is sintered by using aluminum-containing slurry to generate a local front surface field, so that the body defect caused by a high-temperature process and the boron-oxygen defect caused by a boron diffusion process are avoided while good metal-semiconductor ohmic contact is ensured. The formed aluminum-silicon alloy layer can weaken the aluminum puncture phenomenon, thereby ensuring the integrity of the textured structure on the surface of the substrate and reducing the surface recombination rate of the front surface of the substrate.
Fig. 2 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present invention.
Accordingly, referring to fig. 2, another aspect of the present invention provides a photovoltaic module for converting received light energy into electric energy and transmitting the electric energy to an external load. The photovoltaic module includes: at least one cell string formed by connecting a plurality of solar cells 10 according to any one of the above-described embodiments (e.g., fig. 1); a packaging adhesive film 21 for covering the surface of the battery string; and the cover plate 22 is used for covering the surface of the packaging adhesive film 21, which is far away from the battery string.
The packaging adhesive film 21 may be an organic packaging adhesive film such as EVA or POE, and the packaging adhesive film 21 covers the surface of the battery string to seal and protect the battery string. In some embodiments, the packaging adhesive films 21 include an upper packaging adhesive film and a lower packaging adhesive film respectively covering both sides of the surface of the battery string. The cover plate 22 may be a cover plate such as a glass cover plate or a plastic cover plate for protecting the battery string, and the cover plate 22 covers the surface of the packaging adhesive film 21 facing away from the battery string. In some embodiments, the cover plate 22 is provided with a light trapping structure to increase the utilization rate of incident light. The photovoltaic module has higher current collection capability and lower carrier recombination rate, and can realize higher photoelectric conversion efficiency. In some embodiments, the cover plates 22 include upper and lower cover plates on both sides of the battery string.
It will be understood by those skilled in the art that the foregoing embodiments are specific examples of the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in its practical application. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention is defined by the appended claims.
Claims (10)
1. A solar cell, comprising:
the substrate is provided with a front surface and a back surface which are opposite to each other, one of N-type doping elements or P-type doping elements is doped in the substrate, and an aluminum diffusion layer is arranged in the substrate;
the aluminum-silicon alloy layer is at least positioned on the surface of the aluminum diffusion layer away from the back surface of the substrate, and the surface of the aluminum-silicon alloy layer is exposed out of the substrate;
the passivation layer is positioned on the front surface of the substrate and is also positioned on the surface of the aluminum-silicon alloy layer;
electrodes arranged along a first direction, the electrodes penetrating through the passivation layer and electrically contacting the aluminum-silicon alloy layer;
the tunneling dielectric layer is positioned on the back surface of the substrate, the doped conductive layer is positioned on the surface, far away from the back surface of the substrate, of the tunneling dielectric layer, and the doped conductive layer is doped with the other one of N-type doped elements or P-type doped elements;
a back electrode in contact with the doped conductive layer.
2. The solar cell of claim 1, wherein the top surface of the aluminum-silicon alloy layer is flush with the front surface of the substrate.
3. The solar cell of claim 1, wherein the top surface of the aluminum-silicon alloy layer is higher than the front surface of the substrate.
4. The solar cell according to claim 2 or 3, wherein a width of the aluminum-silicon alloy layer in the first direction is equal to or greater than a width of a contact surface of the aluminum-silicon alloy layer with the electrode.
5. The solar cell according to claim 4, wherein the width of the aluminum-silicon alloy layer is in a range of 1um to 100um.
6. The solar cell according to claim 2 or 3, wherein the thickness of the aluminum-silicon alloy layer is in the range of 1 μm to 5 μm.
7. The solar cell of claim 2, wherein the aluminum diffusion layer surrounds the aluminum-silicon alloy layer, the substrate exposes a surface of the aluminum diffusion layer, and the passivation layer is further located on the surface of the aluminum diffusion layer.
8. The solar cell according to claim 7, wherein the aluminum diffusion layer has a diffusion depth of aluminum ions of 1 μm to 5 μm.
9. The solar cell of claim 1, wherein the passivation layer comprises a stacked silicon oxide layer, aluminum oxide layer, silicon oxynitride layer, and silicon nitride layer.
10. A photovoltaic module, comprising:
a battery string formed by connecting a plurality of solar cells according to any one of claims 1 to 9;
the packaging adhesive film is used for covering the surface of the battery string;
and the cover plate is used for covering the surface of the packaging adhesive film, which deviates from the battery string.
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| CN115985980A (en) * | 2023-02-17 | 2023-04-18 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
| CN117276372A (en) * | 2023-09-12 | 2023-12-22 | 淮安捷泰新能源科技有限公司 | Solar cell and preparation method thereof |
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| CN115985980A (en) * | 2023-02-17 | 2023-04-18 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
| CN115985980B (en) * | 2023-02-17 | 2023-09-08 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
| CN117276372A (en) * | 2023-09-12 | 2023-12-22 | 淮安捷泰新能源科技有限公司 | Solar cell and preparation method thereof |
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