CN217824900U - High-efficiency gallium nitride radio frequency power amplifier - Google Patents
High-efficiency gallium nitride radio frequency power amplifier Download PDFInfo
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- CN217824900U CN217824900U CN202221397571.XU CN202221397571U CN217824900U CN 217824900 U CN217824900 U CN 217824900U CN 202221397571 U CN202221397571 U CN 202221397571U CN 217824900 U CN217824900 U CN 217824900U
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 230000005669 field effect Effects 0.000 claims abstract description 34
- 239000003990 capacitor Substances 0.000 claims description 46
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
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- 230000005540 biological transmission Effects 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The utility model discloses a high efficiency gallium nitride radio frequency power amplifier, including input matching network, grid biasing network, parallel resonance stable network, field effect transistor, drain electrode biasing network and output matching network. The utility model discloses based on harmonic control technique, utilize harmonic control circuit to restrain radio frequency power amplifier's two, third harmonic for radio frequency signal is through harmonic circuit tuned back, and two, third harmonic power obviously descend, and more power conversion become fundamental wave power, thereby increase output, lifting efficiency. The circuit structure enables the radio frequency power amplifier to obtain high efficiency and high power capability in a wider frequency band.
Description
Technical Field
The utility model relates to a field effect transistor radio frequency power amplifier and microwave circuit field, especially to the high efficiency high power amplifier that terminal emission module of radio frequency microwave transceiver used.
Background
In recent years, with the continuous progress of wireless communication technology and semiconductor technology, wireless communication systems are being developed toward higher data rates, wider and wider coverage areas, and lower power consumption. As a core device of a wireless communication system transmitter, the performance of the radio frequency power amplifier, such as power gain, efficiency, linearity and the like, determines the quality of the whole system index.
In addition, the rf power amplifier is located at the end of the wireless transmitter, and is the core device for determining the quality of information transmission. The radio frequency amplifier is mainly used for amplifying radio frequency signals, ensuring certain output power and signal integrity and then transmitting the radio frequency signals to an antenna for transmission. Therefore, the performance of the rf power amplifier has a direct influence on the transmission quality, power consumption and distance of the wireless communication system. In order to further improve the performance of the wireless communication system, the rf power amplifier is required to be continuously developed toward high power and high efficiency.
However, there is a significant bottleneck in the design of single-stage rf and microwave power amplifiers, especially in terms of high power and high efficiency. The reason is that the development of the fields of semiconductor materials and technologies, circuit structures, circuit technologies and the like is slow, the circuit structures tend to be complex, and along with the continuous rise of frequency bands and the continuous increase of bandwidth, great challenges are brought to the performance improvement of the circuits.
The utility model discloses based on harmonic control technique, utilize harmonic control circuit to restrain radio frequency power amplifier's two, third harmonic for radio frequency signal is through harmonic network tuning back, and two, third harmonic power obviously descend, and more parts of its power turn into fundamental wave power, thereby increase output, the lifting efficiency. The suppression of the second harmonic and the third harmonic is suppressed by a second harmonic control circuit and a third harmonic control circuit in an input matching network and an output matching network, and the output fundamental wave power and the drain electrode efficiency are improved through a waveform structure.
Disclosure of Invention
The utility model aims to solve the technical problem that a high efficiency gallium nitride radio frequency power amplifier is provided. The power amplifier is based on a harmonic control technology, and utilizes the harmonic control circuit to inhibit second and third harmonics of the radio frequency power amplifier, so that after radio frequency signals are tuned by the harmonic circuit, the power of the second and third harmonics is obviously reduced, more power of the second and third harmonics is converted into fundamental wave power, output power is increased, and efficiency is improved. The circuit structure enables the radio frequency power amplifier to obtain high efficiency and high power capability in a wider frequency band.
The utility model provides an above-mentioned technical problem's technical scheme as follows: a high-efficiency gallium nitride radio-frequency power amplifier comprises an input matching network, a grid biasing network, a parallel resonance stabilizing network, a field effect transistor, a drain biasing network and an output matching network;
the input end of the input matching network is the input end of the whole power amplifier, and the output end of the input matching network is connected with the input end of the parallel resonance stable network;
the output end of the parallel resonance stable network is connected with the grid of the field effect transistor and the output end of the grid bias network;
the input end of the grid bias network is the input end of the grid source voltage of the whole power amplifier; the output end of the parallel resonance stabilizing network is connected with the output end of the parallel resonance stabilizing network and the grid electrode of the field effect tube;
the drain electrode of the field effect transistor is connected with the input end of the output matching network and the output end of the drain electrode biasing network, and the source electrode of the field effect transistor is grounded;
the input end of the drain electrode bias network is the input end of the drain-source voltage of the whole power amplifier; the output end of the output matching network is connected with the drain electrode of the field effect transistor and the input end of the output matching network;
the output end of the output matching network is the output end of the whole power amplifier.
Further, the input end of the input matching network is connected with the input end RF of the whole power amplifier in And microstrip line TL 1 Microstrip line TL 1 The other end of the capacitor C is connected with a capacitor C 1 Capacitor C 1 Is connected with a microstrip line TL at the other end 3 And microstrip single branch stub TL 2 Microstrip line TL 3 Is connected with the microstrip line TL at the other end 5 And microstrip single branch stub TL 4 Microstrip line TL 5 Is connected to the input matching networkTo the output terminal of (a).
The beneficial effects of the above further scheme are: the utility model discloses an input matching network except can accurate source impedance match, still have the blocking coupling, reduce parasitic parameter effect, show the gain and the power capacity that have promoted the amplifier. In addition, the second harmonic control circuit is used for inhibiting short circuit of the second harmonic, and the efficiency of the power amplifier can be greatly improved.
Further, the input end of the parallel resonance stabilizing network is connected with a capacitor C 2 And a resistance R 1 Capacitance C 2 And a resistance R 1 The other end of the parallel resonant stable network is connected with the output end of the parallel resonant stable network.
The beneficial effects of the above further scheme are: the utility model discloses the stability that RC parallel resonance circuit structure that parallel resonance stable network adopted can effectual reinforcing field effect tube to guarantee that whole power amplifier keeps absolute stability at great frequency channel within range.
Further, the input end of the grid bias network is connected with a bias voltage V gs Bias voltage V gs The other end of the capacitor is connected with a grounded capacitor C 3 And an inductance L 1 Inductance L 1 The other end of the capacitor is connected with a grounding capacitor C 4 And a resistance R 2 Resistance R 2 Is connected with a microstrip line TL at the other end 6 Microstrip line TL 6 And the other end of the second switch is connected to the output end of the gate bias network.
The beneficial effects of the further scheme are as follows: the utility model discloses a pi type network that grid biasing network comprises the inductance of two parallel capacitors and a series connection, and this structure has the advantage of no matching forbidden area, bandwidth broad, can effectively solve the limited problem of harmonic control class power amplifier theoretical frequency.
Furthermore, the input end of the field effect transistor is connected with the grid electrode of the field effect transistor, the source electrode of the field effect transistor is grounded, and the drain electrode of the field effect transistor is connected with the output end of the field effect transistor.
The beneficial effects of the further scheme are as follows: the utility model discloses a field effect transistor adopts gallium nitride HEMT technology, and frequency range is DC-6GHz, and output reaches 10W, possesses characteristics such as high electron mobility, forbidden bandwidth width, operating speed are fast, robustness height, has very high current density and withstand voltage capacity, is fit for working under the high power.
Further, the input end of the drain electrode bias network is connected with a bias voltage V ds Bias voltage V ds The other end of the capacitor is connected with a grounding parallel capacitor C 5 、C 6 、C 7 、C 8 And an inductance L 2 Inductance L 2 Is connected with the microstrip line TL at the other end 7 Microstrip line TL 7 And the other end of the second transistor is connected to the output end of the drain bias network.
The beneficial effects of the above further scheme are: the utility model discloses a drain electrode biasing network constitute by the parallel capacitance network that a series inductance and four parallel capacitance constitute, possess the direct current, hinder interchange, filtering, weaken self-oscillation and compensation transistor load capacitance's effect.
Furthermore, the input end of the output matching network is connected with the microstrip line TL 8 Microstrip line TL 8 The other end of the capacitor is connected with a grounding capacitor C 9 And microstrip line TL 9 Microstrip line TL 9 The other end of the first branch is connected with a microstrip single-branch stub TL 10 And a capacitor C 10 Capacitor C 10 Is connected with the microstrip line TL at the other end 11 Microstrip line TL 11 The other end of which is used as the output RF of the whole power amplifier out 。
The beneficial effects of the above further scheme are: the utility model discloses an output matching network except can accurate load impedance match, the third harmonic control circuit that it includes, open a way the suppression to the third harmonic, can greatly reduce power loss, the lifting efficiency.
Drawings
Fig. 1 is a schematic block diagram of a power amplifier of the present invention;
fig. 2 is a circuit diagram of the power amplifier of the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely exemplary and are intended to illustrate the principles and spirit of the invention, not to limit the scope of the invention.
In recent years, the development of radio frequency power amplifiers has become more and more bottlenecked, especially in terms of high power and high efficiency. The reason is that the development of the fields of semiconductor materials and technologies, circuit structures, circuit technologies and the like is slow, and along with the continuous rising of frequency bands and the continuous increase of bandwidth, great challenges are brought to the performance improvement of circuits.
The embodiment of the utility model provides a high efficiency gallium nitride radio frequency power amplifier, including input matching network, grid biasing network, parallel resonance stable network, field effect transistor, drain electrode biasing network and output matching network.
As shown in fig. 1, the input end of the input matching network is the input end of the whole power amplifier, and the output end of the input matching network is connected with the input end of the parallel resonance stabilizing network;
the output end of the parallel resonance stable network is connected with the grid of the field effect transistor and the output end of the grid bias network;
the input end of the grid bias network is the input end of the grid source voltage of the whole power amplifier; the output end of the parallel resonance stabilizing network is connected with the output end of the parallel resonance stabilizing network and the grid electrode of the field effect tube;
the drain electrode of the field effect transistor is connected with the input end of the output matching network and the output end of the drain electrode biasing network, and the source electrode of the field effect transistor is grounded;
the input end of the drain electrode bias network is the input end of the drain-source voltage of the whole power amplifier; the output end of the output matching network is connected with the drain electrode of the field effect transistor and the input end of the output matching network;
the output end of the output matching network is the output end of the whole power amplifier.
As shown in fig. 2, the input of the input matching network is connected to the input RF of the whole power amplifier in And microstrip line TL 1 Microstrip line TL 1 The other end of the capacitor C is connected with a capacitor C 1 Capacitance C 1 Is connected with the microstrip line TL at the other end 3 And microstrip single branch stub TL 2 Microstrip line TL 3 Is connected with a microstrip line TL at the other end 5 And microstrip single branch stub TL 4 Microstrip line TL 5 And the other end of the input matching network is connected with the output end of the input matching network.
The input end of the parallel resonance stable network is connected with a capacitor C 2 And a resistance R 1 Capacitor C 2 And a resistance R 1 The other end of the parallel resonant stable network is connected with the output end of the parallel resonant stable network.
The input end of the grid bias network is connected with a bias voltage V gs Bias voltage V gs The other end of the capacitor is connected with a grounded capacitor C 3 And an inductance L 1 Inductance L 1 The other end of the capacitor is connected with a grounding capacitor C 4 And a resistance R 2 Resistance R 2 Is connected with the microstrip line TL at the other end 6 Microstrip line TL 6 And the other end of the second switch is connected to the output end of the gate bias network.
The input end of the field effect tube is connected with the grid electrode of the field effect tube, the source electrode of the field effect tube is grounded, and the drain electrode of the field effect tube is connected with the output end of the field effect tube.
The input end of the drain electrode bias network is connected with a bias voltage V ds Bias voltage V ds The other end of the capacitor is connected with a grounding parallel capacitor C 5 、C 6 、C 7 、C 8 And an inductance L 2 Inductance L 2 Is connected with a microstrip line TL at the other end 7 Microstrip line TL 7 And the other end of the second transistor is connected to the output end of the drain bias network.
The input end of the output matching network is connected with a microstrip line TL 8 Microstrip line TL 8 The other end of the capacitor is connected with a grounded capacitor C 9 And microstrip line TL 9 Microstrip line TL 9 The other end of the first branch is connected with a microstrip single-branch stub TL 10 And a capacitor C 10 Capacitor C 10 Is connected with the microstrip line TL at the other end 11 Microstrip line TL 11 The other end of which is used as the output RF of the whole power amplifier out 。
The following introduces the specific working principle and process of the present invention with reference to fig. 2:
radio frequency inputThe signal passing through the input terminal RF in The input end of the parallel resonance stabilizing network is connected with the input circuit through the input matching network, and then amplified through the field effect transistor, and under the power supply and regulation of the grid bias network and the drain bias network, the RF is output from the output end of the output matching network out And (6) outputting.
Based on above-mentioned circuit analysis, the utility model provides a high efficiency gallium nitride radio frequency power amplifier, with single-stage power amplifier difference in the past lie in, power amplifier simple structure to the performance of all indexes is all superior. Furthermore, the utility model discloses based on harmonic control technique, utilize harmonic control circuit to restrain radio frequency power amplifier's two, third harmonic for radio frequency signal is through harmonic network tuning back, and two, third harmonic power obviously descend, and more parts of its power turn into fundamental wave power, thereby increase output, the raising the efficiency. The suppression of the second harmonic and the third harmonic is suppressed by a second harmonic control circuit and a third harmonic control circuit in an input matching network and an output matching network, and the output fundamental power and the drain efficiency are improved by a waveform structure. The method specifically comprises the following steps: microstrip line TL in second harmonic control circuit 3 、TL 4 And TL 5 Form a T-shaped microstrip structure, in which TL 4 The structure is a micro-strip single-branch stub, and secondary harmonic short circuit is realized, so that a grid input signal is closer to an ideal sinusoidal signal waveform; grounding capacitor and microstrip line TL of third harmonic control circuit 8 、TL 9 The structure of the parallel connection structure enables the third harmonic to be open-circuited, thereby effectively reducing the harmonic power and improving the bandwidth efficiency.
In addition, in the whole high-efficiency gallium nitride radio-frequency power amplifier, the type of a field effect tube and the sizes of other resistors and capacitors are determined by comprehensively considering various indexes such as the efficiency, the bandwidth, the output power and the like of the whole circuit, and the radio-frequency power amplifier realizes the characteristics of high power and high efficiency through later layout design and reasonable layout.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (7)
1. A high-efficiency gallium nitride radio-frequency power amplifier is characterized by comprising an input matching network, a grid bias network, a parallel resonance stabilizing network, a field effect tube, a drain bias network and an output matching network;
the input end of the input matching network is the input end of the whole power amplifier, and the output end of the input matching network is connected with the input end of the parallel resonance stable network;
the output end of the parallel resonance stable network is connected with the grid of the field effect transistor and the output end of the grid bias network;
the input end of the grid bias network is the input end of the grid source voltage of the whole power amplifier; the output end of the parallel resonance stabilizing network is connected with the output end of the parallel resonance stabilizing network and the grid electrode of the field effect tube;
the drain electrode of the field effect transistor is connected with the input end of the output matching network and the output end of the drain electrode biasing network, and the source electrode of the field effect transistor is grounded;
the input end of the drain electrode bias network is the input end of the drain-source voltage of the whole power amplifier; the output end of the output matching network is connected with the drain electrode of the field effect transistor and the input end of the output matching network;
and the output end of the output matching network is the output end of the whole power amplifier.
2. A high efficiency gan RF power amplifier as in claim 1, wherein the input of the input matching network is connected to the RF input of the whole power amplifier in And microstrip line TL 1 Microstrip line TL 1 The other end of the capacitor C is connected with a capacitor C 1 Capacitor C 1 Is connected with the microstrip line TL at the other end 3 And microstrip single branch stub TL 2 Microstrip line TL 3 Is connected with the microstrip line TL at the other end 5 And microstrip single branch stub TL 4 Microstrip line TL 5 And the other end of the input matching network is connected with the output end of the input matching network.
3. The high efficiency GaN RF power amplifier as defined in claim 1, wherein the input terminal of the shunt resonance stabilization network is connected to a capacitor C 2 And a resistance R 1 Capacitor C 2 And a resistance R 1 The other end of the parallel resonant stable network is connected with the output end of the parallel resonant stable network.
4. The high efficiency GaN RF power amplifier as defined in claim 1, wherein the input of the gate bias network is connected to a bias voltage V gs Bias voltage V gs The other end of the capacitor is connected with a grounding capacitor C 3 And an inductance L 1 Inductance L 1 The other end of the capacitor is connected with a grounded capacitor C 4 And a resistance R 2 Resistance R 2 Is connected with the microstrip line TL at the other end 6 Microstrip line TL 6 And the other end of the second resistor is connected with the output end of the grid bias network.
5. The high efficiency GaN RF power amplifier of claim 1, wherein the input terminal of the FET is connected to the gate of the FET, the source of the FET is grounded, and the drain of the FET is connected to the output terminal of the FET.
6. The high efficiency GaN RF power amplifier as defined in claim 1, wherein the input terminal of the drain bias network is connected to a bias voltage V ds Bias voltage V ds The other end of the capacitor is connected with a grounding parallel capacitor C 5 、C 6 、C 7 、C 8 And an inductance L 2 Inductance L 2 Is connected with a microstrip line TL at the other end 7 Microstrip line TL 7 And the other end of the second transistor is connected to the output end of the drain bias network.
7. The high efficiency GaN RF power amplifier as defined in claim 1, wherein the input terminal of the output matching network is connected to a microstrip line TL 8 Microstrip line TL 8 The other end of the capacitor is connected with a grounding capacitor C 9 And microstrip line TL 9 Microstrip line TL 9 The other end of the first branch is connected with a microstrip single-branch stub TL 10 And a capacitor C 10 Capacitor C 10 Is connected with a microstrip line TL at the other end 11 Microstrip line TL 11 The other end of which is used as the output RF of the whole power amplifier out 。
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221397571.XU CN217824900U (en) | 2022-06-06 | 2022-06-06 | High-efficiency gallium nitride radio frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221397571.XU CN217824900U (en) | 2022-06-06 | 2022-06-06 | High-efficiency gallium nitride radio frequency power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240235A (en) * | 2023-11-16 | 2023-12-15 | 南京诺源医疗器械有限公司 | Power amplifying circuit and electronic system |
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- 2022-06-06 CN CN202221397571.XU patent/CN217824900U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240235A (en) * | 2023-11-16 | 2023-12-15 | 南京诺源医疗器械有限公司 | Power amplifying circuit and electronic system |
| CN117240235B (en) * | 2023-11-16 | 2024-03-12 | 南京诺源医疗器械有限公司 | Power amplifying circuit and electronic system |
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Granted publication date: 20221115 |