CN217789037U - 1550nm wavelength grating external cavity tunable semiconductor laser device - Google Patents
1550nm wavelength grating external cavity tunable semiconductor laser device Download PDFInfo
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- CN217789037U CN217789037U CN202221683526.0U CN202221683526U CN217789037U CN 217789037 U CN217789037 U CN 217789037U CN 202221683526 U CN202221683526 U CN 202221683526U CN 217789037 U CN217789037 U CN 217789037U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000017525 heat dissipation Effects 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000002310 reflectometry Methods 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses a 1550nm wavelength grating external cavity tunable semiconductor laser device which comprises an optical platform (1), a lifting table (2), a heat dissipation module (3), a gain chip (4), a first six-axis adjusting frame (5), a first collimating mirror (6), a first fixing frame (7), a reflecting mirror (8), a second six-axis adjusting frame (9), a diffraction grating (10), a second fixing frame (11) and a second collimating mirror (12). The included angle between the reflector (8) and the grating (10) is the complementary angle of the included angle between the first-order diffraction light and the grating (10). Light emitted by the gain chip (4) is incident on the diffraction grating (10) through the first collimating mirror (6) for feedback, and the first-order diffraction after light splitting is fed back to the gain chip (4), so that the tunable grating external cavity is realized. Output light is emitted from the other surface of the gain chip (4), and is output after being collimated by the second collimating mirror (12), zero-order diffraction light is reflected back to the grating through the reflecting mirror (8), the tuning range (100 nm) can be ensured, and meanwhile, the output power is increased.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a 1550nm wavelength grating external cavity tunable semiconductor laser device.
Background
Semiconductor lasers are applied in many fields, such as high-resolution spectrum and broadband communication network systems, and need to have the characteristics of wide tunable range, high-frequency modulation and narrow line width at the same time, and more fields require that the output light of the laser has tunable characteristics, so that the output light can be tuned to one or more specific wavelengths. The tunable external cavity semiconductor laser has the advantages of small volume, light weight, high efficiency, long service life, direct current drive, narrow spectral line width, good coherence and the like, and the grating external cavity tunable semiconductor laser has good performance in realizing continuous wide tuning range laser output. The requirements of applications such as coherent light communication and optical fiber communication on the tunable external cavity semiconductor laser with 1550nm waveband are met. Based on the above, a 1550nm wavelength grating external cavity tunable semiconductor laser device is provided.
Disclosure of Invention
The invention aims to realize a 1550nm wavelength grating external cavity tunable semiconductor laser device.
A1550 nm wavelength grating tunable external cavity semiconductor laser device comprises an optical platform (1), a lifting table (2), a heat dissipation module (3), a gain chip (4), a first six-axis adjusting frame (5), a first collimating mirror (6), a first fixing frame (7), a reflecting mirror (8), a second six-axis adjusting frame (9), a diffraction grating (10), a second fixing frame (11) and a second collimating mirror (12).
The method is characterized in that:
the material of the optical platform (1) can be stainless steel or metallic aluminum.
The material of the lifting platform (2) can be stainless steel or metallic aluminum.
The material of the heat dissipation module (3) can be copper.
The gain chip (4) is a single-angle-surface gain chip with the emission wavelength of 1550nm, adopts a bent waveguide structure and aims to reduce the reflectivity of the cavity surface and increase the gain efficiency, wherein the reflectivity of the bent waveguide surface is 0.01%, and the reflectivity of the straight cavity surface is 10%.
The first six-axis adjusting bracket (5) can be adjusted front and back, left and right, and up and down, and the material can be metal aluminum or stainless steel.
The first collimating lens (6) is a plano-convex lens, the working distance is 1.56mm, the back surface focal length is 2.97mm, the central wavelength is 1550nm, and light in the range of 1050nm-1620nm is allowed to transmit.
The material of the fixing frame (7) can be metallic aluminum or stainless steel.
The substrate of the reflector (8) is glass, and the material and the thickness of the evaporated optical film are respectively 236.19nm MgF 2 （169.64nm TiO 2 283.43nm MgF 2 ） 11 169.64nm TiO 2 . High reflectivity up to 99.99% in 1400-1750 nm.
The second six-axis adjusting bracket (9) can be adjusted back and forth, left and right and up and down and can be made of metal aluminum or stainless steel.
The material of the diffraction grating (10) is glass, the diffraction angle is 28 DEG 41', the angle range which needs to be adjusted by the diffraction grating in the design is 26 DEG 44'37 '-28 DEG 41'7 ', so as to ensure that the wavelength continuous tuning range of the laser is 100nm, the position of the reflecting mirror is changed along with the angle change of the diffraction grating, and the change range of the reflecting mirror angle is 63 DEG 13'23 '-61' -18 '53'. The design selects the diffraction angle with the angle very close to that of the diffraction grating, so that the diffraction efficiency of the grating can reach 90 percent, and the groove is 600 lines/mm.
The material of the fixing frame (11) and the fixing frame (7) can be metal aluminum or stainless steel.
The second collimating lens (12) is a plano-convex lens, the working distance is 1.56mm, the back surface focal length is 2.97mm, the central wavelength is 1550nm, and light in the range of 1050nm-1620nm is allowed to transmit.
Drawings
FIG. 1 is a front view of an embodiment of the present invention;
FIG. 2 is a top view of an embodiment of the present invention.
Detailed Description
The present invention is described in further detail below with reference to fig. 1 and 2.
The invention discloses a 1550nm wavelength grating external cavity tunable semiconductor laser device which comprises an optical platform (1), a lifting table (2), a heat dissipation module (3), a gain chip (4), a first six-axis adjusting frame (5), a first collimating mirror (6), a first fixing frame (7), a reflecting mirror (8), a second six-axis adjusting frame (9), a diffraction grating (10), a second fixing frame (11) and a second collimating mirror (12).
Elevating platform (2), first six-axis alignment jig (5), mount (7), six-axis alignment jig (9) of second, mount (11) are fixed on optical platform (1), fix on elevating platform (2) single angle face gain chip (4) and heat dissipation module (3) again, first collimating mirror (6) are fixed on first six-axis alignment jig (5), diffraction grating (10) are fixed on six-axis alignment jig (9) of second, speculum (8) are fixed on mount (7), the contained angle that keeps speculum and grating is the complementary angle of one-level diffraction sum grating contained angle constantly (namely zero-level diffraction sum speculum constantly keeps perpendicular). The light emitted by the single-angle surface gain chip (4) is collimated by the first collimating mirror (6), then enters the diffraction grating (10) external cavity for light feedback, is split by the grating, and the first-order diffraction is fed back to the active region of the gain chip (4) and interacts with the light field in the active region to cause the gain difference among the longitudinal modes, so that the line width of the grating external cavity tunable semiconductor laser is narrowed, the output light is emitted from the other surface (with the reflectivity of 10%) of the gain chip (4), and is collimated into parallel light by the collimating mirror (12) to be connected with subsequent test equipment, the zero-order diffraction light vertically hits the reflector (8), is reflected back to the grating by the reflector and then returns to the external cavity to continuously generate gain, the power loss is reduced, and the output power is increased while the tunable range (100 nm) is ensured.
Claims (1)
1. A1550 nm wavelength grating external cavity tunable semiconductor laser device, comprising: the device comprises an optical platform (1), a lifting table (2), a heat dissipation module (3), a gain chip (4), a first six-axis adjusting frame (5), a first collimating mirror (6), a first fixing frame (7), a reflecting mirror (8), a second six-axis adjusting frame (9), a diffraction grating (10), a second fixing frame (11) and a second collimating mirror (12); the single-angle surface gain chip (4) is coated with an antireflection film on a curved waveguide surface with the central wavelength of 1550nm, the transmissivity reaches 99.99%, and the reflectivity of a straight cavity surface is 10% and is used for laser output; the first collimating lens (6) corresponds to the single-angle surface gain chip (4) and enables divergent light emitted from the chip to be collimated into parallel light; the position of a first collimating mirror (6) is adjusted through a first six-axis adjusting frame (5) so that a gain chip (4) is positioned on the focus of the collimating mirror, the horizontal vertical angle and the pitch angle of a diffraction grating (10) are adjusted through a second six-axis adjusting frame (9), the light path entering the grating returns to the resonant cavity for gain, and the grating angle is determined so that the diffraction efficiency can be maximized; the position of the reflector (8) is determined by adjusting the angle of the diffraction grating (10) to ensure that zero-order reflected light vertically hits the reflector, is reflected to the grating by the reflector and then returns to the gain region to continuously generate gain, and the output power is ensured while the tunable range (100 nm) is ensured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221683526.0U CN217789037U (en) | 2022-07-02 | 2022-07-02 | 1550nm wavelength grating external cavity tunable semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221683526.0U CN217789037U (en) | 2022-07-02 | 2022-07-02 | 1550nm wavelength grating external cavity tunable semiconductor laser device |
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| Publication Number | Publication Date |
|---|---|
| CN217789037U true CN217789037U (en) | 2022-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202221683526.0U Expired - Fee Related CN217789037U (en) | 2022-07-02 | 2022-07-02 | 1550nm wavelength grating external cavity tunable semiconductor laser device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115603172A (en) * | 2022-11-18 | 2023-01-13 | 吉光半导体科技有限公司（Cn） | Fast-tuning small-sized Littman structure external cavity laser |
-
2022
- 2022-07-02 CN CN202221683526.0U patent/CN217789037U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115603172A (en) * | 2022-11-18 | 2023-01-13 | 吉光半导体科技有限公司（Cn） | Fast-tuning small-sized Littman structure external cavity laser |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20221111 |