CN217770779U - Insulated structure is kept apart to IGBT module - Google Patents
Insulated structure is kept apart to IGBT module Download PDFInfo
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- CN217770779U CN217770779U CN202221535139.2U CN202221535139U CN217770779U CN 217770779 U CN217770779 U CN 217770779U CN 202221535139 U CN202221535139 U CN 202221535139U CN 217770779 U CN217770779 U CN 217770779U
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Abstract
The utility model discloses an insulation system is kept apart to IGBT module, it is including IGBT device, positive negative mother row and insulating extension board, the IGBT device is including positive terminal and negative terminal, the slot has been seted up between positive terminal and the negative terminal, positive negative both ends of female row respectively with positive terminal and negative terminal fixed connection, insulating extension board is including the plate body, the front end of plate body is formed with convex preceding baffle forward, the top end of plate body is formed with convex last baffle that makes progress, the plate body is inserted and is located in the slot, preceding baffle keep off in the top of IGBT device, positive terminal and negative terminal divide to locate the both sides of overhead gage. The utility model discloses under insulating barrier's separation effect, improved greatly insulating grade between the positive and negative terminal of IGBT device, simultaneously the utility model has the advantages of simple structure does not occupy extra device space, and in addition, the cost of addding insulating barrier is also cheap more, has satisfied the application demand betterly.
Description
Technical Field
The utility model relates to a IGBT module especially relates to an insulated structure is kept apart to IGBT module.
Background
The IGBT module is a commonly used power device in frequency conversion equipment, and the terminals of the IGBT module are generally fixedly connected with the positive busbar and the negative busbar in the connection process, but the problems of insufficient insulation grade and the like of the IGBT module in certain electrical occasions due to the fact that the positive terminal and the negative terminal of the IGBT module are close to each other and effective blocking measures are lacked between the positive terminal and the negative terminal, and if the IGBT module is opened and designed again, the IGBT module has the problems of high cost and the like.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to prior art's not enough, provide an insulation level height, simple structure, occupation space is little, low cost's IGBT module isolation insulation system.
In order to solve the technical problem, the utility model adopts the following technical scheme.
The utility model provides an insulation system is kept apart to IGBT module, its is including IGBT device, positive negative row and insulating extension board, the IGBT device is including positive terminal and negative terminal, the slot has been seted up between positive terminal and the negative terminal, positive negative both ends of female row of positive negative respectively with positive terminal and negative terminal fixed connection, insulating extension board is including the plate body, the front end of plate body is formed with convex preceding baffle forward, the top end of plate body is formed with convex last baffle that makes progress, the plate body is inserted and is located in the slot, preceding baffle resist in the top of IGBT device, positive terminal and negative terminal divide to locate the both sides of overhead gage.
Preferably, two absorption capacitors are fixed on the top of the IGBT device, and the two absorption capacitors are respectively disposed on the front side and the rear side of the upper baffle.
Preferably, the IGBT device further comprises a heat radiator, and the IGBT device is fixed on the heat radiator.
Preferably, the number of the IGBT devices and the number of the insulating support plate are both multiple, and the multiple IGBT devices are uniformly distributed at the edge of the heat sink.
Preferably, the height of the top end of the front baffle is 1mm greater than the height of the pin of the absorption capacitor.
Preferably, the top height of the upper baffle is 4mm greater than the top height of the IGBT device.
Preferably, an insulating paper is clamped between the positive busbar and the negative busbar.
The utility model discloses an among the insulation system is kept apart to IGBT module, every IGBT device correspondence is equipped with an insulating barrier, insulating barrier comprises plate body, preceding baffle and overhead gage, wherein the plate body mainly used cartridge is in the slot, preceding baffle is used for the joint to be in the top of IGBT device, the overhead gage makes progress protrusion and extension, is used for the separation to be in between positive terminal and the negative terminal, work as after the IGBT device is connected with positive negative female arranging the insulating barrier's separation effect down, has improved greatly insulating grade between the positive negative terminal of IGBT device, simultaneously the utility model has the advantages of simple structure does not occupy extra device space, and in addition, the cost of addding insulating barrier is also cheaper, has satisfied the application demand betterly.
Drawings
Fig. 1 is a perspective view of the isolation and insulation structure of the IGBT module of the present invention;
fig. 2 is a structural view of an IGBT device and an insulating support plate.
Detailed Description
The present invention will be described in more detail with reference to the accompanying drawings and examples.
The utility model discloses an insulation system is kept apart to IGBT module combines fig. 1 and fig. 2 to show, and it is including IGBT device 1, positive and negative female arranging 2 and insulating barrier 3, IGBT device 1 is including positive terminal 10 and negative terminal 11, slot 12 has been seted up between positive terminal 10 and the negative terminal 11, positive and negative female arranging 2 positive and negative both ends respectively with positive terminal 10 and negative terminal 11 fixed connection, insulating barrier 3 is including plate body 30, the front end of plate body 30 is formed with convex preceding baffle 31 forward, the top of plate body 30 is formed with convex overhead gage 32 that makes progress, plate body 30 inserts and locates in the slot 12, preceding baffle 31 support in the top of IGBT device 1, positive terminal 10 and negative terminal 11 divide to locate the both sides of overhead gage 32.
In the structure, every IGBT device 1 corresponds and is equipped with an insulating barrier 3, insulating barrier 3 comprises plate body 30, preceding baffle 31 and overhead gage 32, wherein plate body 30 mainly used cartridge is in the slot 12, preceding baffle 31 is used for the joint to be in IGBT device 1's top, overhead gage 32 makes progress protrusion and extension for the separation is in between positive terminal 10 and the negative terminal 11, work as after IGBT device 1 is connected with positive negative bus 2 after insulating barrier 3's separation effect has been improved greatly insulating grade between 1 positive and negative terminals of IGBT device, simultaneously the utility model has the advantages of simple structure does not occupy extra device space, in addition, the cost of addding insulating barrier is also cheaper, has satisfied the application demand betterly.
Further, two absorption capacitors 4 are fixed on the top of the IGBT device 1, and the two absorption capacitors 4 are respectively disposed on the front and rear sides of the upper baffle 32. The structure is arranged, so that the insulating partition plate 3 can play an insulating and blocking role and can be well matched with the two absorption capacitors 4.
In practical application, a plurality of IGBT devices 1 are generally required to cooperate to realize corresponding functions, and in order to assist the plurality of IGBT devices in dissipating heat, the present embodiment further includes a heat sink 5, where the IGBT devices 1 are fixed on the heat sink 5.
Further, the number of the IGBT devices 1 and the number of the insulating spacers 3 are multiple, and the multiple IGBT devices 1 are uniformly distributed at the edge of the heat sink 5.
In order to achieve the insulation and blocking functions well, in this embodiment, the height of the top end of the front baffle 31 is 1mm greater than the height of the pins of the absorption capacitor 4. Accordingly, the top height of the upper baffle 32 is 4mm greater than the top height of the IGBT device 1.
As a preferred structure, an insulating paper 20 is sandwiched between the two busbars of the positive and negative busbars 2.
The utility model discloses an insulated structure is kept apart to IGBT module, it can refer to following step in the equipment process: firstly, the IGBT device is installed and fixed on a radiator, then an insulating partition plate is placed on the radiator, so that a plate body is inserted into a slot, a front baffle plate abuts against the top of the IGBT device, clamping and limiting are further completed, then a negative busbar, insulating paper and a positive busbar are sequentially paved and fixed with positive and negative terminals of the IGBT device, absorption capacitors are installed on the front side and the rear side of the insulating partition plate and are assembled and fixed with the IGBT device until the assembling effect that the IGBT device is not loosened is achieved.
The above is only the embodiment of the present invention, and is not intended to limit the present invention, and all modifications, equivalent replacements or improvements made within the technical scope of the present invention should be included within the protection scope of the present invention.
Claims (7)
1. The utility model provides an insulation system is kept apart to IGBT module, its characterized in that, arranges (2) and insulating barrier (3) including IGBT device (1), positive negative, IGBT device (1) is including positive terminal (10) and negative terminal (11), slot (12) have been seted up between positive terminal (10) and negative terminal (11), positive negative both ends of female row (2) of positive negative respectively with positive terminal (10) and negative terminal (11) fixed connection, insulating barrier (3) are including plate body (30), the front end of plate body (30) is formed with forward convex preceding baffle (31), the top of plate body (30) is formed with upwards convex last baffle (32), plate body (30) insert locate in slot (12), preceding baffle (31) support in the top of IGBT device (1), positive terminal (10) and negative terminal (11) divide and locate the both sides of going up baffle (32).
2. The IGBT module isolation insulation structure according to claim 1, wherein two absorption capacitors (4) are fixed on the top of the IGBT device (1), and the two absorption capacitors (4) are respectively arranged on the front side and the rear side of the upper baffle plate (32).
3. The IGBT module isolation insulation structure according to claim 1, further comprising a heat sink (5), wherein the IGBT device (1) is fixed to the heat sink (5).
4. The IGBT module isolation insulation structure according to claim 3, characterized in that the number of the IGBT devices (1) and the insulation spacers (3) is plural, and the plural IGBT devices (1) are uniformly distributed at the edge of the heat sink (5).
5. The IGBT module isolation insulation structure according to claim 2, wherein the front baffle (31) has a top height 1mm greater than a pin height of the absorption capacitor (4).
6. The IGBT module isolation insulation structure according to claim 1, wherein a top height of the upper baffle (32) is 4mm greater than a top height of the IGBT device (1).
7. The insulated structure of the IGBT module according to claim 1, wherein an insulating paper (20) is sandwiched between the two bus bars of the positive and negative bus bars (2).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202221535139.2U CN217770779U (en) | 2022-06-16 | 2022-06-16 | Insulated structure is kept apart to IGBT module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202221535139.2U CN217770779U (en) | 2022-06-16 | 2022-06-16 | Insulated structure is kept apart to IGBT module |
Publications (1)
Publication Number | Publication Date |
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CN217770779U true CN217770779U (en) | 2022-11-08 |
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CN202221535139.2U Active CN217770779U (en) | 2022-06-16 | 2022-06-16 | Insulated structure is kept apart to IGBT module |
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2022
- 2022-06-16 CN CN202221535139.2U patent/CN217770779U/en active Active
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