CN217643299U - Impedance inverter for increasing bandwidth - Google Patents

Abstract

The utility model discloses an impedance inverter for increasing bandwidth, which comprises a main amplifier module, a first shunt resistor and a first capacitor connected with the first shunt resistor; the MIM capacitor module comprises a first inductor, a second inductor, a third inductor and an MIM capacitor which are connected with each other, wherein one end of the MIM capacitor is connected with the third inductor, and the other end of the MIM capacitor is connected with a parasitic inductor; the MIM capacitor module also comprises a substrate, wherein the substrate is provided with a through hole, the parasitic inductor is positioned in the through hole, and the MIM capacitor is positioned on the substrate; the auxiliary amplifier module comprises a second shunt resistor and a second capacitor connected with the second shunt resistor; parasitic inductance can be effectively reduced to realize a T-shaped network, so that an impedance inverter in the power amplifier can be realized at a high frequency higher than a Ka wave band, and the impedance inverter can be further ensured to be suitable for the T-shaped network at each frequency wave band, so as to increase the working bandwidth.

Description

Impedance inverter for increasing bandwidth

Technical Field

The utility model relates to an impedance inverter for increasing bandwidth belongs to 5G communication technical field.

Background

A fifth generation (5G) mobile communication system will provide large system capacity, low latency and massive connectivity to meet the rapidly increasing demand for internet traffic. To achieve these characteristics, massive Multiple Input Multiple Output (MIMO) of millimeter-Wave (mm-Wave) band is a promising technology and has attracted a wide interest. In a base station system using millimeter wave massive MIMO, a high output power and a high efficiency amplifier are required to increase a data transmission distance and reduce power consumption. To implement the amplifier, a gallium nitride (GaN) Doherty Power Amplifier (DPA) is a good candidate because GaN has a high breakdown voltage characteristic and the DPA can improve efficiency at a back-off power level that is actually used in a communication system.

At present, gaN DPA with high output power and high efficiency is successfully developed. However, to cover the operating frequencies of various 5G applications, it is necessary to further broaden the bandwidth with high efficiency and high output power. In order to widen the bandwidth, the impedance inverter uses a T-type network at a low frequency lower than the X-band, and such an impedance inverter can widen the bandwidth. However, at high frequencies above the Ka band, it is difficult to implement a T-network because of the large parasitic inductance connected across the metal-insulator-metal (MIM) capacitors in the T-network.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide an impedance inverter for increase bandwidth for impedance inverter among the power amplifier can be applicable to the T type network under each frequency band, with the increase work bandwidth.

In order to achieve the above purpose, the utility model provides a following technical scheme:

an impedance inverter for increasing bandwidth, the impedance inverter being suitable for use in a power amplifier, the impedance inverter comprising:

the main amplifier module comprises a first shunt resistor and a first capacitor connected with the first shunt resistor;

a MIM capacitor module connected to the main amplifier module, the MIM capacitor module including a first inductor, a second inductor, a third inductor, and a MIM capacitor connected to each other, the MIM capacitor having one end connected to the third inductor and the other end connected to a parasitic inductor; the MIM capacitor module further comprises a substrate having a via thereon, the parasitic inductance being located within the via, the MIM capacitor being located on the substrate;

an auxiliary amplifier module connected with the MIM capacitor module, the auxiliary amplifier module comprising a second shunt resistor and a second capacitor connected with the second shunt resistor.

Further, the first capacitor, the second capacitor, and the MIM capacitor module are in a T-shaped distribution.

The beneficial effects of the utility model reside in that: an impedance inverter for increasing a bandwidth is provided, the impedance inverter being located at an output of a power amplifier, the impedance inverter comprising a main amplifier module, a MIM capacitor module connected to the main amplifier module, and an auxiliary amplifier module connected to the MIM capacitor module, the main amplifier module comprising a first shunt resistor and a first capacitor connected to the first shunt resistor, the MIM capacitor module comprising a first inductor, a second inductor, a third inductor, and a MIM capacitor connected to each other, the MIM capacitor having one end connected to the third inductor and the other end connected to a parasitic inductor, the MIM capacitor module further comprising a substrate having a via hole thereon, the parasitic inductor being located in the via hole, the MIM capacitor being located on the substrate, the auxiliary amplifier module comprising a second shunt resistor and a second capacitor connected to the second shunt resistor; parasitic inductance can be effectively reduced to realize a T-shaped network, so that an impedance inverter in the power amplifier can be realized at a high frequency higher than a Ka wave band, and the impedance inverter can be further ensured to be suitable for the T-shaped network at each frequency wave band, so as to increase the working bandwidth.

The above description is only an overview of the technical solution of the present invention, and in order to make the technical means of the present invention clearer and can be implemented according to the content of the description, the following detailed description is made with reference to the preferred embodiments of the present invention and accompanying drawings.

Drawings

Fig. 1 is a circuit diagram of an impedance inverter in the present embodiment;

fig. 2 is a schematic structural diagram of a point a in fig. 1.

Detailed Description

The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.

The following detailed description of embodiments of the present application will be described in conjunction with the accompanying drawings and examples. The following examples are intended to illustrate the present application but are not intended to limit the scope of the present application.

In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention of the present application, the meaning of "a plurality" is two or more unless otherwise specified.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.

An embodiment of the present application provides an impedance inverter for increasing bandwidth, which is suitable for use in a power amplifier and is connected to an output terminal of the power amplifier. Fig. 1 is a circuit diagram of an impedance inverter. As shown, the impedance inverter 100 includes a main amplifier module 10, a MIM capacitor module 20 coupled to the main amplifier module 10, and an auxiliary amplifier module 30 coupled to the MIM capacitor module 20.

The main amplifier module 10 includes a first shunt resistor R1 and a first capacitor C1 connected to the first shunt resistor R1. The auxiliary amplifier module 30 includes a second shunt resistor R2 and a second capacitor C2 connected to the second shunt resistor R2. The first shunt resistor R1, the first capacitor C1, the second shunt resistor R2, and the second capacitor C2 are used to distribute an optimal output impedance of Power Added Efficiency (PAE) in the power amplifier.

The MIM capacitor module 20 comprises a first inductance L1, a second inductance L2, a third inductance L3 and a MIM capacitor C3 connected to each other. Specifically, one end of the MIM capacitor C3 is connected to the third inductor L3, the other end is connected to the parasitic inductor L4, and the other end of the parasitic inductor L4 is grounded.

It should be noted that the first capacitor C1, the second capacitor C2 and the MIM capacitor module 20 are distributed in a T shape, which can effectively increase the operating bandwidth.

As shown in fig. 2, the MIM capacitor module 20 includes a substrate 21 having a via 22 on the substrate 21, a parasitic inductor L4 located in the via 22, and a MIM capacitor C3 located on the substrate 21. Since the parasitic inductance connected to a metal-insulator-metal (MIM) capacitor in a T-type network is large at a high frequency higher than the Ka band, it is difficult to implement the T-type network, and in order to solve this problem, the parasitic inductance L4 is placed in the via 22 so that the parasitic inductance L4 passes through the via 22 and is grounded, and the parasitic inductance L4 can be effectively reduced to implement the T-type network, thereby increasing the operating bandwidth.

In summary, the present application provides an impedance inverter for increasing a bandwidth, the impedance inverter being located at an output of a power amplifier, the impedance inverter comprising a main amplifier module, a MIM capacitor module connected to the main amplifier module, and an auxiliary amplifier module connected to the MIM capacitor module, the main amplifier module comprising a first shunt resistor and a first capacitor connected to the first shunt resistor, the MIM capacitor module comprising a first inductor, a second inductor, a third inductor, and a MIM capacitor connected to each other, one end of the MIM capacitor being connected to the third inductor and the other end of the MIM capacitor being connected to a parasitic inductor, the MIM capacitor module further comprising a substrate having a via hole thereon, the parasitic inductor being located in the via hole, the MIM capacitor being located on the substrate, the auxiliary amplifier module comprising a second shunt resistor and a second capacitor connected to the second shunt resistor; parasitic inductance can be effectively reduced to realize a T-shaped network, so that an impedance inverter in the power amplifier can be realized at a high frequency higher than a Ka wave band, and the impedance inverter can be further ensured to be suitable for the T-shaped network at each frequency wave band, so as to increase the working bandwidth.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the concept of the present invention, several variations and modifications can be made, which all fall within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (2)

1. An impedance inverter for increasing bandwidth, the impedance inverter adapted for use in a power amplifier, the impedance inverter comprising:

the main amplifier module comprises a first shunt resistor and a first capacitor connected with the first shunt resistor;

a MIM capacitor module connected to the main amplifier module, the MIM capacitor module including a first inductor, a second inductor, a third inductor, and a MIM capacitor connected to each other, the MIM capacitor having one end connected to the third inductor and the other end connected to a parasitic inductor; the MIM capacitor module further comprises a substrate having a via thereon, the parasitic inductance being located within the via, the MIM capacitor being located on the substrate;

an auxiliary amplifier module connected with the MIM capacitor module, the auxiliary amplifier module comprising a second shunt resistor and a second capacitor connected with the second shunt resistor.

2. The impedance inverter of claim 1, wherein the first capacitor, the second capacitor, and the MIM capacitor module are distributed in a T-shape.

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