CN217588576U - Negative resistance temperature coefficient's compound thin film chip resistor - Google Patents
Negative resistance temperature coefficient's compound thin film chip resistor Download PDFInfo
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- CN217588576U CN217588576U CN202123123280.XU CN202123123280U CN217588576U CN 217588576 U CN217588576 U CN 217588576U CN 202123123280 U CN202123123280 U CN 202123123280U CN 217588576 U CN217588576 U CN 217588576U
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Abstract
A composite film chip resistor with negative resistance temperature coefficient belongs to the field of electronic components. The LED lamp is characterized by comprising an insulating substrate; the resistance layer comprises a negative resistance temperature coefficient material layer and a positive resistance temperature coefficient material layer, at least one layer of each of the negative resistance temperature coefficient material layer and the positive resistance temperature coefficient material layer can be stacked in multiple layers, the stacking sequence of the layers can be changed, and the resistance layer is arranged above the insulating substrate; the front electrode comprises a first front electrode and a second front electrode, the first front electrode and the second front electrode are respectively arranged at two ends of the upper surface of the resistance layer, a gap is reserved between the first front electrode and the second front electrode, and the first front electrode and the second front electrode cover part of the resistance layer; and the protective layer covers part of the resistor layer and is in lap joint with the first front electrode and the second front electrode. The utility model provides a resistor has very low resistance temperature coefficient and compromises film resistance's high accuracy and stability simultaneously.
Description
Technical Field
The utility model relates to an electronic components technical field especially relates to a negative resistance temperature coefficient's compound film chip resistor.
Background
The chip film resistor (resistance network) is a chip film resistor (resistance network) with high resistance value precision and small volume, is made by evaporating a material with certain resistivity on the surface of an insulating material by a similar evaporation method, has the advantages of high resistance value precision, small resistance temperature coefficient, small noise, good long-term stability and the like, has the highest precision of +/-0.01 percent, and is suitable for the fields of electronic communication, spaceflight, aviation, medical equipment devices and the like.
In many products, especially in some precise instruments and weighing apparatus products, it is often necessary to have good temperature stability. The parasitic resistance of some circuit elements in the circuit due to their own manufacturing process and structural characteristics may increase as the temperature increases, which requires the external resistor to have a negative temperature coefficient to compensate. At present, commonly used thin film resistor materials comprise CrSi, niCr, taN and the like, but the resistance temperature coefficient of a single material is often higher, and the concentration is poorer.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the shortcoming of above-mentioned prior art and provide a negative resistance temperature coefficient's compound film chip resistor. By combining the two alloy materials, the defect of single material resistance can be effectively overcome by utilizing the opposite resistance temperature coefficient attributes of the two alloy materials, the negative resistance temperature coefficient is realized, and the long-term stability of the product is good.
In order to achieve the above object, the technical solution of the present invention provides a negative temperature coefficient of resistance's composite thin film chip resistor, including: an insulating substrate; the resistance layer comprises a negative temperature coefficient material layer and a positive temperature coefficient material layer, at least one layer of each of the negative temperature coefficient material layer and the positive temperature coefficient material layer is arranged above the insulating substrate; the front electrode comprises a first front electrode and a second front electrode, the first front electrode and the second front electrode are respectively arranged at two ends of the upper surface of the resistance layer, a gap is reserved between the first front electrode and the second front electrode, and the first front electrode and the second front electrode cover a part of the resistance layer; and the protective layer covers part of the resistor layer and is in lap joint with the first front electrode and the second front electrode.
The insulating substrate is a glass or ceramic substrate and is one of microcrystalline glass, quartz glass, alumina ceramic, aluminum nitride ceramic or aluminum nitride ceramic and beryllium oxide ceramic with an alumina thin layer deposited on the surface.
The resistance layer comprises a negative temperature coefficient material layer and a positive temperature coefficient material layer, wherein at least one layer of each of the negative temperature coefficient material layer and the positive temperature coefficient material layer can be stacked in multiple layers, the stacking sequence of the layers can be changed, and the resistance layer is arranged above the insulating substrate;
wherein the negative temperature coefficient of resistance material layer is a tantalum nitride resistance material layer.
The positive resistance temperature coefficient material layer is made of an alloy material, and the alloy material is one of manganese-copper alloy, nickel-chromium alloy, nickel-iron alloy, manganese-copper-tin alloy, manganese-copper-nickel alloy, nickel-copper-iron alloy and nickel-chromium-aluminum-silicon alloy.
Wherein the front electrode is gold.
Wherein, the protective layer is one of aluminum oxide, aluminum oxide/titanium oxide, tantalum oxide/titanium oxide, hafnium oxide or silicon nitride inorganic films.
Drawings
Various aspects of the invention may be better understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various elements may be arbitrarily increased or reduced for clarity of discussion.
Fig. 1 is a schematic structural diagram of the resistor of the present invention.
In the figure: 1 represents an insulating substrate; 2 represents a negative temperature coefficient of resistance material layer; 3 represents a positive temperature coefficient of resistance material layer; 4 represents a first front electrode; 5 represents a second front electrode; and 6 represents a protective layer.
Detailed Description
For better illustration of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the drawings and specific embodiments, and in addition, the selection of the alloy materials of the present invention can be selected by those skilled in the art according to specific situations, and the selection is not listed here, and the structure, preparation scheme and effect of the resistor of the present invention are further illustrated by only taking the present embodiment as an example.
With reference to fig. 1, the present application provides a novel negative resistance temperature coefficient composite thin film resistor, which includes an insulating substrate 1, where the insulating substrate 1 is a glass or ceramic substrate, and is one of microcrystalline glass, quartz glass, alumina ceramic, aluminum nitride ceramic, or aluminum nitride ceramic and beryllium oxide ceramic with an alumina thin layer deposited on the surface.
The negative temperature coefficient of resistance material layer 2 is arranged on the upper surface of the insulating substrate 1, and the material layer 2 is a tantalum nitride material. In the present embodiment, the negative resistance temperature coefficient material layer 2 may be formed by a method of vacuum sputtering.
The positive resistance temperature coefficient material layer 3 is arranged on the upper surface of the negative resistance temperature coefficient material layer 2, and the material layer 3 is made of an alloy material which is one of manganese-copper alloy, nickel-chromium alloy, nickel-iron alloy, manganese-copper-tin alloy, manganese-copper-nickel alloy, nickel-copper-iron alloy and nickel-chromium-aluminum-silicon alloy. In this embodiment, the positive temperature coefficient of resistance material layer 3 may be formed by a method of vacuum sputtering.
And the front electrodes comprise a first front electrode 4 and a second front electrode 5, the first front electrode 4 and the second front electrode 5 are respectively arranged at two ends of the upper surface of the positive resistance temperature coefficient material layer 3, and a gap is reserved between the first front electrode 4 and the second front electrode 5. The front electrode is made of gold, and in this embodiment, the electrode film layer may be formed by evaporation or vacuum sputtering.
And a protective layer 6, the protective layer 6 being disposed over the positive temperature coefficient of resistance material layer 3, the protective layer covering a portion of the first and second front electrodes 4, 5. The protective layer is one of aluminum oxide, aluminum oxide/titanium oxide, tantalum oxide/titanium oxide, hafnium oxide or silicon nitride inorganic films. In this embodiment, the protective layer 6 may be formed by vacuum deposition, so as to protect the resistive material layer and improve the moisture resistance and corrosion resistance of the product.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A negative temperature coefficient of resistance composite thin film chip resistor comprising: the insulating substrate is a glass or ceramic substrate; the resistance layer comprises a negative resistance temperature coefficient material layer and a positive resistance temperature coefficient material layer, at least one layer of each of the negative resistance temperature coefficient material layer and the positive resistance temperature coefficient material layer is arranged above the insulating substrate; the front electrode comprises a first front electrode and a second front electrode, the first front electrode and the second front electrode are respectively arranged at two ends of the upper surface of the resistor layer, a gap is reserved between the first front electrode and the second front electrode, and the first front electrode and the second front electrode cover a part of the resistor layer; the protective layer, the protective layer setting is in the resistive layer top, the protective layer covers part the resistive layer, and with first positive electrode with the second positive electrode has the overlap joint.
2. The negative temperature coefficient of resistance composite thin film chip resistor of claim 1, wherein the insulating substrate is a glass or ceramic substrate, and is one of microcrystalline glass, quartz glass, alumina ceramic, aluminum nitride ceramic, or aluminum nitride ceramic and beryllium oxide ceramic with an alumina thin layer deposited on the surface.
3. The negative temperature coefficient of resistance composite thin film chip resistor of claim 1, wherein the resistive layer comprises at least one negative temperature coefficient of resistance material layer and at least one positive temperature coefficient of resistance material layer, and the negative temperature coefficient of resistance material layer and the positive temperature coefficient of resistance material layer are stacked in a multilayer manner, and the stacking sequence can be changed.
4. The negative temperature coefficient of resistance composite thin film chip resistor of claim 1, wherein the negative temperature coefficient of resistance material layer is a tantalum nitride resistance material layer.
5. The negative temperature coefficient of resistance composite thin film chip resistor of claim 1, wherein the positive temperature coefficient of resistance material layer is comprised of an alloy material that is one of manganin, nickel copper, nickel chromium, nickel iron, manganese copper tin, manganese copper nickel, nickel copper iron, nickel chromium aluminum silicon.
6. The negative temperature coefficient of resistance composite thin film chip resistor of claim 1, wherein said front electrode is gold.
7. The negative temperature coefficient of resistance composite thin film chip resistor of claim 1, wherein the protective layer is one of an aluminum oxide, aluminum oxide/titanium oxide, tantalum oxide/titanium oxide, hafnium oxide, or silicon nitride inorganic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123123280.XU CN217588576U (en) | 2021-12-13 | 2021-12-13 | Negative resistance temperature coefficient's compound thin film chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123123280.XU CN217588576U (en) | 2021-12-13 | 2021-12-13 | Negative resistance temperature coefficient's compound thin film chip resistor |
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| Publication Number | Publication Date |
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| CN217588576U true CN217588576U (en) | 2022-10-14 |
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| CN202123123280.XU Active CN217588576U (en) | 2021-12-13 | 2021-12-13 | Negative resistance temperature coefficient's compound thin film chip resistor |
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| CN (1) | CN217588576U (en) |
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2021
- 2021-12-13 CN CN202123123280.XU patent/CN217588576U/en active Active
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