CN217307658U - Novel high-end switching device drive circuit - Google Patents
Novel high-end switching device drive circuit Download PDFInfo
- Publication number
- CN217307658U CN217307658U CN202220213567.7U CN202220213567U CN217307658U CN 217307658 U CN217307658 U CN 217307658U CN 202220213567 U CN202220213567 U CN 202220213567U CN 217307658 U CN217307658 U CN 217307658U
- Authority
- CN
- China
- Prior art keywords
- switch tube
- electrically connected
- capacitor
- driver
- switching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims description 26
- 238000002955 isolation Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004146 energy storage Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model discloses a novel high-end switching device drive circuit, including drive DR module and drive power supply, drive power supply's anodal electric connection has the projecting pole of switch tube Q1, and switch tube Q1's base electric connection has resistance R1's one end, and resistance R1's other end electric connection has resistance R2's one end and electric capacity C2's one end, and switch tube Q1's collecting electrode, resistance R2's the other end and electric capacity C2's other end electric connection has same switch tube Q2's collecting electrode. The utility model discloses an increase forward driver, switch tube Q2, electric capacity C1, reverse direction driver, switch tube Q3, diode D1, diode D2 and electric capacity C2, make high-end switching device not need special isolation power and isolation drive, only need power and drive signal altogether, simplified high-end switching device's drive circuit greatly, optimized manufacturing cost, satisfy the user demand.
Description
Technical Field
The utility model relates to a switching device drive circuit technical field especially relates to a novel high-end switching device drive circuit.
Background
The switch device driving circuit is arranged between a main circuit and a control circuit and is used for amplifying a signal of the control circuit, an independent isolation power supply is needed when the existing switch device driving circuit is used, an isolation driver is configured for matching use, the production cost is high, the use requirement cannot be met, and in order to solve the problem, a novel high-end switch device driving circuit is provided.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to a novel high-end switching device driving circuit for solving the problems of the prior art.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a novel high-end switch device driving circuit comprises a driving DR module and a driving power supply, wherein the positive electrode of the driving power supply is electrically connected with an emitting electrode of a switch tube Q1, the base electrode of the switch tube Q1 is electrically connected with one end of a resistor R1, the other end of the resistor R1 is electrically connected with one end of a resistor R2 and one end of a capacitor C2, the collector electrode of a switch tube Q1, the other end of the resistor R2 and the other end of the capacitor C2 are electrically connected with the collector electrode of the same switch tube Q2, the output end of the driving DR module is electrically connected with a forward driver and a reverse driver, the output end of the forward driver is electrically connected with the base electrode of the switch tube Q2, the output end of the reverse driver is electrically connected with the base electrode of a switch tube Q3, the emitting electrode of the switch tube Q3 is grounded, the emitting electrode of the switch tube Q2 and the collector electrode of the switch tube Q3 are electrically connected with one end of the same capacitor C1, the other end of the capacitor C1 is electrically connected with the negative electrode of a diode D1 and the positive electrode of a diode D2, the anode of the diode D1 is electrically connected to a high level VCC, the cathode of the diode D2 is electrically connected to the other end of the resistor R1, and the other end of the capacitor C2 is electrically connected to the output interface Vout.
Preferably, the switching tube Q1, the switching tube Q2 and the switching tube Q4 may be one of a triode and an IGBT having a switching function as well.
Preferably, the forward driver is a driving logic unit of positive logic, that is, when the input is at high level, the output is also at high level; when the input is low, the output is low.
Preferably, the inversion driver is a negative logic driving logic unit, that is, when the input is at a high level, the output is at a low level; when the input is low, the output is high.
Preferably, the capacitor C2 is a high-side driving electric energy storage capacitor, and the capacitor C1 is a charge transfer capacitor.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses an increase forward driver, switch tube Q2, electric capacity C1, reverse driver, switch tube Q3, diode D1, diode D2 and electric capacity C2, make high-end switching device not need special isolation power and isolation drive, only need power and drive signal altogether, the drive circuit of high-end switching device has been simplified greatly, and the production cost is optimized, satisfies the user demand.
Drawings
Fig. 1 is a circuit diagram of a novel high-side switching device driving circuit according to the present invention;
fig. 2 is a graph showing the variation trend of the level of the novel high-side switching device driving circuit according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
Referring to fig. 1-2, a novel high-side switching device driving circuit includes a driving DR module and a driving power supply, the positive electrode of the driving power supply is electrically connected to the emitter of a switching tube Q1, the base of the switching tube Q1 is electrically connected to one end of a resistor R1, the other end of the resistor R1 is electrically connected to one end of a resistor R2 and one end of a capacitor C2, the collector of the switching tube Q1, the other end of the resistor R2 and the other end of the capacitor C2 are electrically connected to the collector of the same switching tube Q2, the output end of the driving DR module is electrically connected to a forward driver and a reverse driver, the output end of the forward driver is electrically connected to the base of the switching tube Q2, the output end of the reverse driver is electrically connected to the base of a switching tube Q3, the emitter of the switching tube Q3 is grounded, the emitter of the switching tube Q2 and the collector of the switching tube Q3 are electrically connected to one end of the same capacitor C1, the other end electric connection of electric capacity C1 has diode D1's negative pole and diode D2's positive pole, diode D1's positive pole electric connection has high level VCC, diode D2's negative pole and resistance R1's other end electric connection, electric capacity C2's other end electric connection has output interface Vout, the utility model discloses an increase forward driver, switch tube Q2, electric capacity C1, reverse direction driver, switch tube Q3, diode D1, diode D2 and electric capacity C2, make high-end switching device not need special isolation power and isolation drive, only need power and drive signal altogether, simplified high-end switching device's drive circuit greatly, optimized manufacturing cost, satisfied the user demand.
In the present invention, the switch tube Q1, the switch tube Q2 and the switch tube Q4 may be one of an audion and an IGBT having a switching function, and the forward driver is a positive logic driving logic unit, that is, when the input is a high level, the output is also a high level; when the input is at low level, the output is at low level, and the reverse driver is a driving logic unit of negative logic, namely when the input is at high level, the output is at low level; when the input is the low level, the output is the high level, electric capacity C2 is high-end drive electric energy storage capacitor, electric capacity C1 is charge transport electric capacity, the utility model discloses an increase forward driver, switch tube Q2, electric capacity C1, reverse direction driver, switch tube Q3, diode D1, diode D2 and electric capacity C2, make high-end switching device not need special isolation power and isolation drive, only need power and drive signal altogether, the drive circuit of high-end switching device has been simplified greatly, and production cost is optimized, and the use requirement is satisfied.
The working principle is as follows: when the high-end switch device driving circuit is used, the high-end switch device does not need special isolation power supply and isolation drive by adding a forward driver, a switch tube Q2, a capacitor C1, a reverse driver, a switch tube Q3, a diode D1, a diode D2 and a capacitor C2, only needs power supply and drive which are connected with the ground in common, when the DR module is driven to send high-frequency pulse waves, the voltage of the capacitor C2 presents high level, the drive of the switch tube Q1 also presents high level, when the DR module is driven to send continuous high level or continuous low level, the capacitor C2 presents low level, the drive of the switch tube Q1 also presents low level, the high-end on-off driving signal is generated by a high-frequency coding wave sending mode, so as to control the switching of the high-end switch tube, and the whole driving circuit only needs the power supply and the driving signal which are connected with the ground in common, thereby greatly simplifying the driving circuit of the high-end switch device, the production cost is optimized.
The above, only be the embodiment of the preferred of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, which are designed to be replaced or changed equally, all should be covered within the protection scope of the present invention.
Claims (5)
1. A novel high-end switch device driving circuit comprises a driving DR module and a driving power supply, and is characterized in that the positive electrode of the driving power supply is electrically connected with the emitter of a switch tube Q1, the base of the switch tube Q1 is electrically connected with one end of a resistor R1, the other end of the resistor R1 is electrically connected with one end of a resistor R2 and one end of a capacitor C2, the collector of the switch tube Q1, the other end of the resistor R2 and the other end of the capacitor C2 are electrically connected with the collector of the same switch tube Q2, the output end of the driving DR module is electrically connected with a forward driver and a reverse driver, the output end of the forward driver is electrically connected with the base of the switch tube Q2, the output end of the reverse driver is electrically connected with the base of a switch tube Q3, the emitter of the switch tube Q3 is grounded, the emitter of the switch tube Q2 and the collector of the switch tube Q3 are electrically connected with one end of the same capacitor C1, the other end of the capacitor C1 is electrically connected to the cathode of the diode D1 and the anode of the diode D2, the anode of the diode D1 is electrically connected to the high-level VCC, the cathode of the diode D2 is electrically connected to the other end of the resistor R1, and the other end of the capacitor C2 is electrically connected to the output interface Vout.
2. The novel high-side switching device driver circuit as claimed in claim 1 wherein said switching transistor Q1, switching transistor Q2 and switching transistor Q4 are either transistors or IGBTs with the same switching function.
3. The novel high-side switching device driver circuit as claimed in claim 1, wherein said forward driver is a positive logic driver logic unit, i.e. when the input is high, the output is also high; when the input is low, the output is low.
4. The novel high-side switching device driver circuit as claimed in claim 1, wherein said inverting driver is a negative logic driver logic unit, i.e. when the input is high, the output is low; when the input is low, the output is high.
5. The novel high-side switching device driver circuit as claimed in claim 1, wherein said capacitor C2 is a high-side driving power storage capacitor and said capacitor C1 is a charge transfer capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220213567.7U CN217307658U (en) | 2022-01-26 | 2022-01-26 | Novel high-end switching device drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220213567.7U CN217307658U (en) | 2022-01-26 | 2022-01-26 | Novel high-end switching device drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217307658U true CN217307658U (en) | 2022-08-26 |
Family
ID=82927110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220213567.7U Active CN217307658U (en) | 2022-01-26 | 2022-01-26 | Novel high-end switching device drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217307658U (en) |
-
2022
- 2022-01-26 CN CN202220213567.7U patent/CN217307658U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101720148B (en) | LED driving circuit and LED device | |
| CN103199677A (en) | One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit | |
| CN103346763A (en) | Insulated gate bipolar transistor drive protective circuit | |
| CN114039589B (en) | MOS tube driving circuit | |
| CN217307658U (en) | Novel high-end switching device drive circuit | |
| CN204827995U (en) | Fan driver chip that single coil direct current is brushless | |
| CN106130525A (en) | One-way conduction circuit and the distribution line failure positioner made with this circuit | |
| CN212752233U (en) | MOS tube driving circuit | |
| CN215072342U (en) | PWM (pulse-Width modulation) circuit controlled by multiple logic judgment conditions | |
| CN210669880U (en) | Circuit for increasing drive current of integrated chip | |
| CN212231152U (en) | Voltage bootstrap chip, weak light acquisition circuit and equipment | |
| CN212413054U (en) | Double-tube flyback power supply | |
| CN211880153U (en) | Voltage bootstrap chip, weak light acquisition circuit and equipment | |
| CN109921631B (en) | Isolated upper bridge bootstrap charge pump circuit for bridge driver and control method | |
| CN210781436U (en) | Knob light modulation working circuit and handheld lamp | |
| CN210867554U (en) | Power PMOS tube driving circuit and driving circuit for three-phase motor | |
| CN218829888U (en) | High-voltage high-power IGBT (insulated Gate Bipolar transistor) driving circuit | |
| CN204755347U (en) | Integrated brushless fan -driving ware of single coil direct current that joins conversely protection | |
| CN218416223U (en) | Direct current motor drive circuit | |
| CN111030662B (en) | IGBT grid driving circuit | |
| CN216794850U (en) | Push-pull boost circuit module and push-pull boost circuit | |
| CN221177538U (en) | MOS tube driving circuit | |
| CN212969472U (en) | High-efficiency synchronous rectification module | |
| CN211859945U (en) | BUCK drive boost charge pump circuit | |
| CN210273526U (en) | Intelligent driving circuit of wireless charger |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230217 Address after: Room 420 - 131, South Building, Torch Plaza, No. 56-58 Torch Road, Torch Park, Xiamen Torch High-tech Zone, Xiamen, Fujian, 361006 Patentee after: Xinruiyuan (Xiamen) Technology Co.,Ltd. Address before: Room 505, building 3, Xinguang Industrial Park, No.9, Xinle East Road, Haicang District, Xiamen City, Fujian Province, 361000 Patentee before: Xiamen baowo Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240422 Address after: Room 701-2, No. 1-3 Xinjia Road, Haicang District, Xiamen City, Fujian Province, 361000 Patentee after: Xiamen baowo Technology Co.,Ltd. Country or region after: China Address before: Room 420 - 131, South Building, Torch Plaza, No. 56-58 Torch Road, Torch Park, Xiamen Torch High-tech Zone, Xiamen, Fujian, 361006 Patentee before: Xinruiyuan (Xiamen) Technology Co.,Ltd. Country or region before: China |