CN217306535U - Perovskite/silicon heterojunction laminated solar cell - Google Patents
Perovskite/silicon heterojunction laminated solar cell Download PDFInfo
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- CN217306535U CN217306535U CN202220428708.7U CN202220428708U CN217306535U CN 217306535 U CN217306535 U CN 217306535U CN 202220428708 U CN202220428708 U CN 202220428708U CN 217306535 U CN217306535 U CN 217306535U
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Abstract
The utility model discloses a perovskite/silicon heterojunction tandem solar cell, tandem solar cell includes silicon heterojunction battery and perovskite battery, the perovskite battery sets up on the silicon heterojunction battery, the perovskite battery includes perovskite layer, electron transport layer, metal electrode layer and transparent electrode layer, the electron transport layer is organic compound layer, the electron transport layer sets up on the perovskite layer, metal electrode layer sets up on the electron transport layer, transparent electrode layer sets up on the metal electrode layer, transparent electrode layer is reaction plasma sedimentary deposit or magnetron sputtering sedimentary deposit, transparent electrode layer with electron transport layer direct contact. The utility model discloses perovskite solar cell has advantages such as luminousness height, low in production cost and output stability.
Description
Technical Field
The utility model relates to a solar cell technical field, concretely relates to perovskite/silicon heterojunction tandem solar cell.
Background
Among the various types of solar cells, silicon heterojunction solar cells have gradually established a significant advantage in the photovoltaic industry due to their advantages of high conversion efficiency, high open-circuit voltage, low temperature coefficient, and the like. Perovskite solar cells are the fastest growing solar cell technology in recent years, and the efficiency of the perovskite solar cells is increased from the first 3.8% to the current 25.7%. The perovskite has the characteristics of adjustable forbidden band width, simple preparation process, low cost and the like. The silicon heterojunction cell and the perovskite are made into the laminated solar cell, so that the absorption spectrum can be maximized, and the cell efficiency is improved.
In the related art, in order to protect the perovskite layer, before PVD coating is used, a metal oxide layer is required to cover the surface of the electron transport layer to serve as a barrier layer, and the barrier layer is used to isolate the damage of the high-energy particles to the surface of the perovskite layer. Due to the structural limitation of the trans-perovskite, the barrier layer is often selected from n-type metal oxides such as tin oxide, zinc oxide, titanium oxide, and the like, and also serves as an auxiliary electron transport layer. Due to the introduction of the barrier layer, the preparation steps of the laminated solar cell are increased, the production cost of the laminated solar cell is increased, the thickness of an electronic transmission layer is increased, extra infrared spectrum loss is caused, the efficiency loss of a bottom cell is caused, and the efficiency of the whole laminated solar cell is finally influenced. Meanwhile, due to the low electron transport rate of the n-type metal oxide, the electron transport at the interface contacting with the n-type metal oxide is unbalanced, and further the hysteresis effect of the top cell (perovskite cell) is caused, so that the tandem solar cell cannot stably output with large power.
SUMMERY OF THE UTILITY MODEL
The present invention is made based on the discovery and recognition by the inventors of the following facts and problems:
the patent document CN215680694U discloses a barrier-free perovskite/silicon heterojunction tandem solar cell and a perovskite solar cell, which eliminates the barrier layer in the conventional solar cell, limits the material of the electron transport layer to organic compounds, and limits the preparation process of the transparent electrode layer to Reactive Plasma Deposition (RPD) to reduce the damage to the perovskite layer.
The present invention aims at solving at least one of the technical problems in the related art to a certain extent. To this end, embodiments of the present invention provide a perovskite/silicon heterojunction tandem solar cell with high transmittance and no process limitation.
The utility model discloses perovskite/silicon heterojunction tandem solar cell includes silicon heterojunction battery and perovskite battery, the perovskite battery sets up on the silicon heterojunction battery, the perovskite battery includes:
a perovskite layer;
an electron transport layer which is an organic compound layer and is disposed on the perovskite layer;
a metal electrode layer disposed on the electron transport layer;
the transparent electrode layer is arranged on the metal electrode layer and is a reaction plasma deposition layer or a magnetron sputtering deposition layer, and the transparent electrode layer is in direct contact with the electron transmission layer.
The utility model discloses perovskite/silicon heterojunction tandem solar cell is through canceling the barrier layer, has not only reduced the thickness on electron transmission layer, has reduced the loss of infrared spectrum, has improved perovskite battery's luminousness to can improve the efficiency of end battery, and then can improve tandem solar cell's efficiency, still reduce tandem solar cell's preparation step, and then can reduction in production cost.
In some embodiments, the material of the electron transport layer is one or more of fullerene, PCBM, BCP and PEIE, and the thickness of the electron transport layer is 10nm-20 nm.
In some embodiments, the transparent electrode layer is a transparent conductive oxide thin film.
In some embodiments, the transparent electrode layer is made of one or more of ITO, IZO, AZO, IWO and ICO, and the thickness of the transparent electrode layer is 40nm to 120 nm.
In some embodiments, the metal electrode layer is a thermally evaporated metal electrode.
In some embodiments, the metal electrode layer has a thickness of 15nm or less.
In some embodiments, further comprising a antireflection film disposed on the perovskite layer.
In some embodiments, further comprising a perovskite interface modification layer disposed on the perovskite layer, the electron transport layer being disposed on the perovskite interface modification layer.
In some embodiments, further comprising a tunneling junction disposed on the silicon heterojunction cell, the perovskite cell disposed on the tunneling junction such that the silicon heterojunction cell is in series with the perovskite cell.
In some embodiments, the tunnel junction has a thickness of 10nm to 100 nm.
Drawings
Fig. 1 is a schematic diagram of a perovskite/silicon heterojunction tandem solar cell according to an embodiment of the present invention.
Reference numerals:
a tandem solar cell 1000;
a metal bottom electrode 101; a transparent conductive layer 102; a p-type amorphous silicon layer 103; a first intrinsic amorphous silicon layer 104; an n-type silicon wafer 105; a second intrinsic amorphous silicon layer 106; an n-type amorphous silicon layer 107; a tunneling junction 108; a hole transport layer 109; a perovskite layer 110; an electron transport layer 111; a transparent electrode layer 112; and a metal electrode layer 113.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
As shown in fig. 1, a perovskite/silicon heterojunction tandem solar cell (hereinafter referred to as a tandem solar cell 1000) according to an embodiment of the present invention includes a silicon heterojunction cell (bottom cell) and a perovskite cell (top cell), and the perovskite cell is disposed on the silicon heterojunction cell.
The perovskite battery comprises a perovskite layer 110, an electron transport layer 111, a metal electrode layer 113 and a transparent electrode layer 112, wherein the electron transport layer 111 is an organic compound layer, the electron transport layer 111 is arranged on the perovskite layer, the metal electrode layer 113 is arranged on the electron transport layer 111, the transparent electrode layer 112 is arranged on the metal electrode layer 113, the transparent electrode layer 112 is a reaction plasma deposition layer or a magnetron sputtering deposition layer, and the transparent electrode layer 112 is in direct contact with the electron transport layer 113.
In the related technology, the transparent electrode layer of the perovskite battery is manufactured by a reactive plasma deposition method (RPD) or a magnetron sputtering method (PVD), wherein the magnetron sputtering method (PVD) coating is that high-energy particles are utilized to bombard the surface of a target material in a vacuum chamber, so that the bombarded particles form a thin film on the surface of the substrate. The particle energy range of PVD coating technology is 1 eV-3 eV, but the plasma contains a large number of high energy particles with energy higher than 100eV, such as secondary electrons, argon ions, and oxygen ions. In the related art, a perovskite cell in a perovskite/silicon heterojunction tandem solar cell comprises a perovskite layer, an electron transport layer and a transparent electrode layer which are sequentially arranged from bottom to top. The transparent electrode layer is made of PVD (physical vapor deposition) coating, high-energy particles have a strong bombardment etching effect on the surface of the substrate, and in the structure without the barrier layer, the high-energy particles can penetrate through the electron transport layer to damage the perovskite layer and damage the surface of the perovskite layer.
Among the correlation technique, perovskite cell's structure from the top down is metal grid line electrode, transparent electrode layer, electron transmission layer and perovskite layer in proper order to metal oxide has as the buffer layer, and the utility model discloses a stacked solar cell 1000 overturns the metal grid line electrode and the transparent electrode layer among the traditional perovskite cell, and changes metal grid line electrode into metal electrode layer 113, acts as the barrier layer by metal electrode layer 113 and plays the guard action to perovskite layer 110, need not to set up the barrier layer in addition. In addition, because of the existence of metal electrode layer 113, the utility model discloses the tandem solar cell 1000 in the implementation both can adopt PVD technology to prepare transparent electrode layer 112, also can adopt RPD technology to prepare transparent electrode layer 112, has removed the restriction to processing technology in the patent document of publication No. CN215680694U, has reduced the processing degree of difficulty and processing cost.
In order to prevent the metal electrode layer 113 from affecting the light transmittance of the tandem solar cell 1000, the metal electrode layer 113 needs to be made thin, and the thickness of the metal electrode layer 113 is preferably less than or equal to 15nm, for example, 7nm, 10nm, 12nm, and the like. Preferably, the metal electrode layer 113 is a thermally evaporated metal electrode.
It should be noted that, the thickness of the conventional metal grid line electrode can reach more than 150nm, and the material of the metal electrode is usually noble metal, such as gold electrode and silver electrode, the stacked solar cell 1000 of the embodiment of the present invention reduces the thickness of the metal electrode layer 113 to below 15nm, so that the cost of the solar cell is greatly reduced.
The utility model discloses perovskite/silicon heterojunction tandem solar cell has not only reduced the thickness of electron transmission layer 111 through canceling the barrier layer, has reduced the loss of infrared spectrum, has improved perovskite battery's luminousness to can improve the efficiency of end battery, and then can improve tandem solar cell 1000's efficiency, still reduced tandem solar cell 1000's preparation step, and then can reduction in production cost.
Optionally, the perovskite layer 110 is fabricated using spin coating, evaporation, sputtering, spray coating, doctor blading, or printing processes.
In some embodiments, the silicon heterojunction cell includes a metal bottom electrode 101, a transparent conductive layer 102, a p-type amorphous silicon layer 103, a first intrinsic amorphous silicon layer 104, an n-type silicon wafer 105, a second intrinsic amorphous silicon layer 106, and an n-type amorphous silicon layer 107, which are sequentially disposed. Wherein the transparent conductive layer 102 is disposed on the metal bottom electrode 101, the p-type amorphous silicon layer 103 is disposed on the transparent conductive layer 102, the first intrinsic amorphous silicon layer 104 is disposed on the p-type amorphous silicon layer 103, the n-type silicon wafer 105 is disposed on the first intrinsic amorphous silicon layer 104, the second intrinsic amorphous silicon layer 106 is disposed on the n-type silicon wafer 105, and the n-type amorphous silicon layer 107 is disposed on the second intrinsic amorphous silicon layer 106.
Alternatively, the p-type amorphous silicon layer 103, the first intrinsic amorphous silicon layer 104, the second intrinsic amorphous silicon layer 106, and the n-type amorphous silicon layer 107 are formed by plasma enhanced chemical vapor deposition or the like.
Optionally, the transparent conductive layer 102 is fabricated by using magnetron sputtering (PVD), Reactive Plasma Deposition (RPD), Atomic Layer Deposition (ALD), evaporation, or thermal growth.
Alternatively, the metal bottom electrode 101 is formed by evaporation, sputtering, printing, or electroplating.
In some embodiments, the tandem solar cell 1000 further includes a tunnel junction 108, the tunnel junction 108 disposed on a silicon heterojunction cell, and a perovskite cell disposed on the tunnel junction 108 such that the silicon heterojunction cell is in series with the perovskite cell.
Specifically, a positive terminal is arranged on the silicon heterojunction battery, a negative terminal is arranged on the perovskite battery, the positive terminal is a positive wiring terminal of the tandem solar battery 1000, and the negative terminal is a negative wiring terminal of the tandem solar battery 1000.
Thus, the tandem solar cell 1000 is a monolithically integrated two-terminal string cell overall. The number of functional layers is small, and low cost and low optical and electrical losses can be realized. In addition, the two-end sub-string battery only needs one junction box, and is easier to integrate into a photovoltaic system.
Optionally, the material of the tunnel junction 108 is one or more of ITO, IZO, AZO, IWO, ICO, or other transparent thin film materials.
Optionally, the tunnel junction 108 has a thickness of 10nm to 100 nm.
Alternatively, the tunnel junction 108 is fabricated by magnetron sputtering (PVD), Reactive Plasma Deposition (RPD), Atomic Layer Deposition (ALD), evaporation, or thermal growth.
In some embodiments, positive and negative terminals are provided on both the perovskite cell and the silicon heterojunction cell to form a four terminal stacked solar cell.
In some embodiments, the material of the electron transport layer 111 is an organic compound, optionally, the material of the electron transport layer 111 is a combination of one or more of fullerene, PCBM, BCP, and PEIE, the thickness of the electron transport layer 111 is 10nm to 20nm, and the organic compound has a good interface contact effect, so that the open-circuit voltage of the perovskite cell can be effectively increased, and the efficiency of the tandem solar cell 1000 can be further improved. And the electron transmission rate of the organic compound is high, so that the phenomenon of unbalanced electron transport at the interface in contact with the organic compound can be effectively reduced, the hysteresis effect of the perovskite battery can be effectively inhibited, and the perovskite battery can be stably output with higher power.
In some embodiments, the transparent electrode layer 112 is a transparent conductive oxide thin film.
Thus, the transparent electrode layer 112 is conveniently fabricated using a reactive plasma deposition method.
Optionally, the material of the transparent electrode layer 112 is one or a combination of ITO, IZO, AZO, IWO and ICO, and the thickness of the transparent electrode layer is 40nm to 120 nm.
In some embodiments, the perovskite cell further comprises a hole transport layer 109, the hole transport layer 109 disposed on the silicon heterojunction cell, and the perovskite layer 110 disposed on the hole transport layer 109.
Optionally, the material of the hole transport layer 109 is PTAA, NiOx, MoOx, PEDOT: PSS, Sprio-OMeTAD, PolyTPD and Spiro-TTB.
Alternatively, the hole transport layer 109 is formed by spin coating, evaporation, sputtering, spray coating, blade coating, or printing.
In some embodiments, the perovskite cell further comprises a antireflection film (not shown in the figures) disposed on the perovskite cell.
Thus, reflection, refraction and scattering phenomena may occur when sunlight passes through the anti-reflection film, so that the optical path of sunlight in the perovskite solar cell is increased, the perovskite layer 110 can absorb more light energy, and further, the efficiency of the perovskite cell and the tandem solar cell 1000 is further improved.
Optionally, the material of the anti-reflection film is LiF, MgF 2 、AlN、ZnS、Si 3 N 4 Or a flexible film with a light trapping structure.
In some embodiments, the perovskite battery further comprises a perovskite interface modification layer (not shown), the perovskite interface modification layer being disposed on the perovskite layer 110, and the electron transport layer 111 being disposed on the perovskite interface modification layer.
Therefore, on one hand, the perovskite interface modification layer can improve the affinity of the electron transmission layer 111, so that the carrier transportation is better realized on the interface of the electron transmission layer 111 and the perovskite layer 110, and the efficiency of the perovskite battery and the efficiency of the tandem solar battery are improved; on the other hand, the perovskite interface modification layer can improve the charge collection efficiency, reduce the interface defects of the electron transport layer 111 and the perovskite layer 110, and is favorable for further improving the efficiency of the perovskite cell and the laminated solar cell.
Optionally, the perovskite interface modification layer may be fabricated by spin coating, evaporation, spraying, blade coating, or printing.
In order to make the technical solution of the present application easier to understand, the technical solution of the present application will be described below by taking an example in which the thickness direction of the perovskite layer 110 coincides with the vertical direction.
The perovskite cell is disposed above the tunnel junction 108 and the silicon heterojunction cell is disposed below the tunnel junction 108. The upper part of the perovskite battery is provided with a negative terminal, the lower part of the silicon heterojunction battery is provided with a positive terminal, and the perovskite battery is in the light incidence direction. The hole transport layer 109, perovskite layer 110, electron transport layer 111, metal electrode layer 113, and transparent electrode layer 112 of the perovskite cell are provided in this order from bottom to top. The n-type amorphous silicon layer 107, the second intrinsic amorphous silicon layer 106, the n-type silicon wafer 105, the first intrinsic amorphous silicon layer 104, the p-type amorphous silicon layer 103, the transparent conductive layer 102 and the metal bottom electrode 101 of the silicon heterojunction cell are sequentially arranged from bottom to top.
Optionally, the overall thickness of the silicon heterojunction cell is no more than 300 μm, and the thickness of the tunneling junction 108 is 10nm-100 nm. The thickness of the perovskite layer 110 in the perovskite cell is not more than 2 μm, and the thickness of each of the electron transport layer 111 and the hole transport layer 109 in the perovskite cell is not more than 100 nm.
According to the utility model discloses stromatolite solar cell 1000's manufacturing process:
step 1, preparing an intrinsic amorphous silicon layer (a first intrinsic amorphous silicon layer 104 and a second intrinsic amorphous silicon layer 106) on each of two surfaces (upper surface and lower surface) of an n-type silicon wafer 105;
step 2, depositing a p-type amorphous silicon layer 103 on one surface (lower surface) of the first intrinsic amorphous silicon layer 104;
step 3, depositing an n-type amorphous silicon layer (n-type amorphous silicon layer 107) on one surface (upper surface) of the second intrinsic amorphous silicon layer 106;
step 4, preparing a transparent conducting layer 102 on one surface (lower surface) of the p-type amorphous silicon layer 103;
step 5, preparing a tunnel junction 108 on one surface (upper surface) of n-type amorphous silicon or the like 107;
step 6, preparing a metal bottom electrode 101 on one surface (lower surface) of the transparent conductive layer 102;
step 7, preparing a hole transport layer 109 on the upper part of the tunnel junction 108;
step 8, preparing a perovskite layer 110 on one surface (upper surface) of the hole transport layer 109;
step 9, preparing an electron transport layer 111 on one surface (upper surface) of the perovskite layer 110;
step 10, preparing a metal electrode layer 113 on one surface (upper surface) of the electron transport layer 111;
in step 11, a transparent electrode layer 112 is prepared on one surface (upper surface) of the metal electrode layer 113.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship indicated based on the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the present disclosure, the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although the above embodiments have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations to the above embodiments by those of ordinary skill in the art are intended to be within the scope of the present invention.
Claims (9)
1. A perovskite/silicon heterojunction tandem solar cell comprising a silicon heterojunction cell and a perovskite cell, said perovskite cell being disposed on said silicon heterojunction cell, said perovskite cell comprising:
a perovskite layer;
an electron transport layer that is an organic compound layer, the electron transport layer being disposed on the perovskite layer;
the metal electrode layer is arranged on the electron transport layer, and the thickness of the metal electrode layer is less than or equal to 15 nm;
the transparent electrode layer is arranged on the metal electrode layer and is a reaction plasma deposition layer or a magnetron sputtering deposition layer, and the transparent electrode layer is in direct contact with the electron transmission layer.
2. The perovskite/silicon heterojunction tandem solar cell according to claim 1, wherein the material of the electron transport layer is one or more of fullerene, PCBM, BCP and PEIE, and the thickness of the electron transport layer is 10nm-20 nm.
3. The perovskite/silicon heterojunction tandem solar cell according to claim 1, wherein the transparent electrode layer is a transparent conductive oxide thin film.
4. The perovskite/silicon heterojunction tandem solar cell according to claim 3, wherein the material of the transparent electrode layer is a combination of one or more of ITO, IZO, AZO, IWO and ICO, and the thickness of the transparent electrode layer is 40nm to 120 nm.
5. The perovskite/silicon heterojunction stack solar cell according to claim 1, wherein the metal electrode layer is a thermally evaporated metal electrode.
6. The perovskite/silicon heterojunction tandem solar cell according to any one of claims 1 to 5, further comprising an anti-reflection film disposed on the perovskite layer.
7. The perovskite/silicon heterojunction tandem solar cell according to any one of claims 1 to 5, further comprising a perovskite interface modification layer disposed on the perovskite layer, the electron transport layer being disposed on the perovskite interface modification layer.
8. The perovskite/silicon heterojunction tandem solar cell of claim 7, further comprising a tunneling junction disposed on the silicon heterojunction cell, the perovskite cell being disposed on the tunneling junction such that the silicon heterojunction cell is in series with the perovskite cell.
9. The perovskite/silicon heterojunction tandem solar cell according to claim 8, wherein the thickness of the tunneling junction is 10nm to 100 nm.
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