CN217149403U - Novel crystal growth temperature field fixed stay plate structure - Google Patents

Novel crystal growth temperature field fixed stay plate structure Download PDF

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Publication number
CN217149403U
CN217149403U CN202123281623.5U CN202123281623U CN217149403U CN 217149403 U CN217149403 U CN 217149403U CN 202123281623 U CN202123281623 U CN 202123281623U CN 217149403 U CN217149403 U CN 217149403U
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China
Prior art keywords
temperature field
supporting plate
reinforcing ribs
reinforcing rib
field fixed
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CN202123281623.5U
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Chinese (zh)
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黄鼎雯
黄小卫
罗亮远
邵明国
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Shanghai Defutai New Materials Technology Co.,Ltd.
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Shanghai Xinli Electromechanical Technology Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/10Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in agriculture
    • Y02A40/25Greenhouse technology, e.g. cooling systems therefor

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Abstract

The utility model discloses a novel crystal growth temperature field fixed stay plate structure, include: the temperature field fixing side supporting plate, the outer circular ring reinforcing ribs and the lower outer circular ring reinforcing ribs which are respectively fixed at the upper end part and the lower end part of the temperature field fixing side supporting plate, the plurality of U-shaped vertical reinforcing ribs which are uniformly and fixedly connected on the outer surface of the temperature field fixing side supporting plate, and at least one transverse reinforcing rib is arranged between every two U-shaped vertical reinforcing ribs; the U-shaped vertical reinforcing ribs are arranged along the vertical direction, and the transverse reinforcing ribs are arranged along the circumferential direction of the temperature field fixing side supporting plate; the vertical difference of the transverse reinforcing ribs between every two adjacent U-shaped vertical reinforcing ribs is one. According to the utility model discloses, simple structure, convenient operation can convenient and fast carry out that the temperature field is fixed and adjust temperature field and furnace body concentricity to effectively reduce calorific loss, excellent in use effect.

Description

Novel crystal growth temperature field fixed stay plate structure
Technical Field
The utility model relates to a technical field of crystal growth temperature field fixed stay screen structure, in particular to novel crystal growth temperature field fixed stay plate structure.
Background
In the crystal growth, the fixation of the temperature field and the concentricity with the furnace body are very important and are the key points for growing high-quality crystal materials. The traditional temperature field is fixed with a thicker tungsten-molybdenum material as a support, the contact area with a furnace body is larger, a large amount of heat loss can be caused by adopting the mode, and the crystal growth power is larger. In the process of crystal growth, the temperature field supporting screen deforms due to higher temperature, so that the concentricity of a temperature field and a furnace body is poor, the gradient of the temperature field is changed, more defects and cracking phenomena are generated on the crystal, and the quality of the crystal is reduced.
SUMMERY OF THE UTILITY MODEL
To the weak point that exists among the prior art, the utility model aims at providing a novel crystal growth temperature field fixed stay plate structure, simple structure, convenient operation can convenient and fast carry out that the temperature field is fixed and adjust temperature field and furnace body concentricity to effectively reduce calorific loss, excellent in use effect. In order to realize the above objects and other advantages according to the present invention, there is provided a novel crystal growth temperature field fixed support plate structure, comprising:
the temperature field fixing side supporting plate, the outer circular ring reinforcing ribs and the lower outer circular ring reinforcing ribs which are respectively fixed at the upper end part and the lower end part of the temperature field fixing side supporting plate, the plurality of U-shaped vertical reinforcing ribs which are uniformly and fixedly connected on the outer surface of the temperature field fixing side supporting plate, and at least one transverse reinforcing rib is arranged between every two U-shaped vertical reinforcing ribs;
the U-shaped vertical reinforcing ribs are arranged along the vertical direction, and the transverse reinforcing ribs are arranged along the circumferential direction of the temperature field fixing side supporting plate;
the vertical difference of the transverse reinforcing ribs between every two adjacent U-shaped vertical reinforcing ribs is one.
Preferably, a plurality of bottom reinforcing ribs are fixedly connected to the inner surface of the lower outer circular ring reinforcing rib, and one end, far away from the lower outer circular ring reinforcing rib, of the bottom reinforcing rib is fixedly connected with the lower inner circular ring reinforcing rib.
Preferably, the bottom reinforcing rib divides a first annular area formed between the lower outer circular ring reinforcing rib and the lower inner circular ring reinforcing rib into a plurality of second annular areas, and a temperature field fixed bottom support plate is fixedly connected in each second annular area.
Preferably, the distance between each temperature field fixing bottom support plate is 2-4 mm.
Preferably, the upper end part and the lower end part of the U-shaped vertical reinforcing rib are provided with nut structures, and the middle part of the U-shaped vertical reinforcing rib is provided with a waist hole structure.
Preferably, the temperature field fixing side supporting plate and the temperature field fixing bottom supporting plate are made of tungsten materials, molybdenum materials or stainless steel materials.
Compared with the prior art, the utility model, its beneficial effect is: simple structure, convenient operation can convenient and fast carry out that the temperature field is fixed and adjust temperature field and furnace body concentricity, and the bottom strengthening rib is with the fixed bottom support board in temperature field and the separation of furnace body bottom, reduces the fixed bottom support board in temperature field and furnace body bottom area of contact, reduces because of the heat loss that heat-conduction caused, excellent in use effect.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of a novel crystal growth temperature field fixed supporting plate structure according to the present invention;
FIG. 2 is a schematic side view of a novel crystal growth temperature field fixed support plate structure according to the present invention;
fig. 3 is a schematic top view of a novel crystal growth temperature field fixed support plate structure according to the present invention;
fig. 4 is a schematic structural view of a U-shaped vertical reinforcing rib nut of a novel crystal growth temperature field fixed support plate structure according to the utility model.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-4, a novel crystal growth temperature field fixed support plate structure comprises: the device comprises a temperature field fixed side supporting plate 8, an outer circular ring reinforcing rib 1 and a lower outer circular ring reinforcing rib 2 which are respectively fixed at the upper end part and the lower end part of the temperature field fixed side supporting plate 8, a plurality of U-shaped vertical reinforcing ribs 4 which are uniformly and fixedly connected on the outer surface of the temperature field fixed side supporting plate 8, and at least one transverse reinforcing rib 7 arranged between every two U-shaped vertical reinforcing ribs 4; the U-shaped vertical reinforcing ribs 4 are arranged along the vertical direction, and the transverse reinforcing ribs 7 are arranged along the circumferential direction of the temperature field fixing side supporting plate 8; the vertical difference of the transverse reinforcing ribs 7 between every two adjacent U-shaped vertical reinforcing ribs 4 is one, and in the figure 1, 8U-shaped vertical reinforcing ribs 4 and 12 transverse reinforcing ribs 7 are arranged.
Further, a plurality of bottom reinforcing ribs 10 are fixedly connected to the inner surface of the lower outer circular ring reinforcing rib 2, and one end of the bottom reinforcing rib 10, which is far away from the lower outer circular ring reinforcing rib 2, is fixedly connected with the lower inner circular ring reinforcing rib 3.
Further, the bottom strengthening rib 10 will be down outer ring strengthening rib 2 and down the first annular region that forms between the inner ring strengthening rib 3 divide into a plurality of second annular regions, and every the rigid coupling has the fixed bottom support board 9 in temperature field in the second annular region, bottom strengthening rib 10 separates the fixed bottom support board 9 in temperature field and furnace body bottom, reduces the fixed bottom support board 9 in temperature field and furnace body bottom area of contact, reduces the calorific loss because of heat-conduction causes.
Furthermore, the distance between every two bottom supporting plates 9 for fixing the temperature field is 2-4mm, and 8 bottom supporting plates 9 which are mutually independent prevent the bottom supporting screens for fixing the temperature field from deforming after temperature rise, so that the stability of the temperature field is ensured, and the crystal quality is improved.
Further, the nut structure 5 has been seted up with the tip down to the upper end of the vertical strengthening rib 4 of U type, nut structure 5 is used for adjusting the fixed side of temperature field and supports screen 8 and furnace body concentricity, and the waist pore structure 6 has been seted up to the vertical strengthening rib 4 middle part of U type, waist pore structure 6 is used for the temperature field evacuation.
Further, the temperature field fixing side supporting plate 8 and the temperature field fixing bottom supporting plate 9 are made of tungsten materials, molybdenum materials or stainless steel materials.
The number of devices and the scale of the processes described herein are intended to simplify the description of the present invention, and applications, modifications and variations of the present invention will be apparent to those skilled in the art.
While the embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments, which are fully applicable in all kinds of fields of application suitable for this invention, and further modifications may be readily made by those skilled in the art, and the invention is therefore not limited to the specific details and illustrations shown and described herein, without departing from the general concept defined by the claims and their equivalents.

Claims (6)

1. The utility model provides a novel crystal growth temperature field fixed stay plate structure which characterized in that includes:
the device comprises a temperature field fixed side supporting plate (8), an outer circular ring reinforcing rib (1) and a lower outer circular ring reinforcing rib (2) which are respectively fixed at the upper end part and the lower end part of the temperature field fixed side supporting plate (8), a plurality of U-shaped vertical reinforcing ribs (4) which are uniformly and fixedly connected on the outer surface of the temperature field fixed side supporting plate (8), and at least one transverse reinforcing rib (7) arranged between every two U-shaped vertical reinforcing ribs (4);
the U-shaped vertical reinforcing ribs (4) are arranged along the vertical direction, and the transverse reinforcing ribs (7) are arranged along the circumferential direction of the temperature field fixing side supporting plate (8);
the vertical difference of the transverse reinforcing ribs (7) between every two adjacent U-shaped vertical reinforcing ribs (4) is one.
2. The novel crystal growth temperature field fixed supporting plate structure as claimed in claim 1, wherein a plurality of bottom reinforcing ribs (10) are fixedly connected to the inner surface of the lower outer circular reinforcing rib (2), and a lower inner circular reinforcing rib (3) is fixedly connected to one end of the bottom reinforcing rib (10) far away from the lower outer circular reinforcing rib (2).
3. The novel crystal growth temperature field fixed supporting plate structure as claimed in claim 2, wherein the bottom reinforcing rib (10) divides a first annular region formed between the lower outer circular ring reinforcing rib (2) and the lower inner circular ring reinforcing rib (3) into a plurality of second annular regions, and a temperature field fixed bottom supporting plate (9) is fixedly connected in each second annular region.
4. A novel crystal growth temperature field fixed supporting plate structure as claimed in claim 3, characterized in that the space between each temperature field fixed bottom supporting plate (9) is 2-4 mm.
5. The novel crystal growth temperature field fixed supporting plate structure as claimed in claim 1, wherein the upper end portion and the lower end portion of the U-shaped vertical reinforcing rib (4) are provided with nut structures, and the middle portion of the U-shaped vertical reinforcing rib (4) is provided with a waist hole structure.
6. The structure of the novel crystal growth temperature field fixed supporting plate as claimed in claim 1, wherein the temperature field fixed side supporting plate (8) and the temperature field fixed bottom supporting plate (9) are made of tungsten material, molybdenum material or stainless steel material.
CN202123281623.5U 2021-12-24 2021-12-24 Novel crystal growth temperature field fixed stay plate structure Active CN217149403U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202123281623.5U CN217149403U (en) 2021-12-24 2021-12-24 Novel crystal growth temperature field fixed stay plate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202123281623.5U CN217149403U (en) 2021-12-24 2021-12-24 Novel crystal growth temperature field fixed stay plate structure

Publications (1)

Publication Number Publication Date
CN217149403U true CN217149403U (en) 2022-08-09

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Application Number Title Priority Date Filing Date
CN202123281623.5U Active CN217149403U (en) 2021-12-24 2021-12-24 Novel crystal growth temperature field fixed stay plate structure

Country Status (1)

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CN (1) CN217149403U (en)

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Effective date of registration: 20231116

Address after: 201822 J, floor 7, building 7, No. 328, Jiajian Road, Jiading District, Shanghai

Patentee after: Shanghai Defutai New Materials Technology Co.,Ltd.

Address before: 201821 room j2491, building 6, No. 1288, Yecheng Road, Jiading District, Shanghai

Patentee before: Shanghai Xinli Electromechanical Technology Co.,Ltd.

TR01 Transfer of patent right