CN217134211U - Thin film capacitor - Google Patents
Thin film capacitor Download PDFInfo
- Publication number
- CN217134211U CN217134211U CN202090000731.5U CN202090000731U CN217134211U CN 217134211 U CN217134211 U CN 217134211U CN 202090000731 U CN202090000731 U CN 202090000731U CN 217134211 U CN217134211 U CN 217134211U
- Authority
- CN
- China
- Prior art keywords
- electrode layer
- thin film
- film
- main surface
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 131
- 239000003990 capacitor Substances 0.000 title claims abstract description 100
- 239000010408 film Substances 0.000 claims abstract description 151
- 229920005989 resin Polymers 0.000 claims abstract description 51
- 239000011347 resin Substances 0.000 claims abstract description 51
- 230000003746 surface roughness Effects 0.000 claims description 37
- 238000004804 winding Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- 239000011368 organic material Substances 0.000 description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 238000001723 curing Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000011104 metalized film Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 229920000877 Melamine resin Polymers 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical group C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- -1 phenoxy resin Chemical class 0.000 description 3
- 239000005056 polyisocyanate Substances 0.000 description 3
- 229920001228 polyisocyanate Polymers 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- 150000003077 polyols Chemical class 0.000 description 3
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000012744 reinforcing agent Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004305 biphenyl Chemical group 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 150000002897 organic nitrogen compounds Chemical group 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The utility model discloses a film capacitor possesses: a1 st dielectric thin film made of resin and having a1 st main surface and a 2 nd main surface; a1 st electrode layer facing the 1 st main surface of the 1 st dielectric thin film; a 2 nd electrode layer facing the 2 nd main surface of the 1 st dielectric thin film; a 2 nd dielectric thin film made of resin, laminated on the 1 st dielectric thin film via the 1 st electrode layer or the 2 nd electrode layer, and having a 3 rd main surface and a 4 th main surface; a1 st external electrode disposed to be electrically connected to the 1 st electrode layer; and a 2 nd external electrode provided to be electrically connected to the 2 nd electrode layer, wherein the 1 st external electrode is a cathode-side external electrode, the 2 nd external electrode is an anode-side external electrode, the 1 st electrode layer has a1 st electrode pattern in which 1 st regions divided by slits are connected to each other via a fuse portion, the 2 nd electrode layer has a 2 nd region having an area larger than that of the 1 st region, and a thickness of the 2 nd electrode layer is larger than that of the 1 st electrode layer.
Description
Technical Field
The utility model relates to a film capacitor.
Background
As one type of capacitor, there is a film capacitor having a structure in which a1 st counter electrode and a 2 nd counter electrode facing each other with a resin film interposed therebetween are arranged while using a flexible resin film as a dielectric. Such a film capacitor is manufactured by, for example, winding or laminating a resin film having a1 st counter electrode and a resin film having a 2 nd counter electrode (see, for example, patent documents 1 to 2).
Patent document 2 discloses a metalized thin-film capacitor including a thin-film capacitor element including a1 st vapor deposition electrode, a 2 nd vapor deposition electrode, and at least 2 dielectric thin films, and having metallization portions formed on both sides of the thin-film capacitor element, wherein the 1 st vapor deposition electrode includes a plurality of divided electrodes divided by dividing slits and arranged in a grid pattern, and a fuse connecting the divided electrodes in parallel, and the 2 nd electrode has no dividing slit and has a higher film resistance value in a capacitance forming portion than the 1 st vapor deposition electrode.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-191823
Patent document 2: japanese laid-open patent publication No. 2004-95604
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
However, in the thin film capacitor described in patent document 1, since the divided electrode having the fuse portion is disposed on the anode side, the anodic oxidation reaction proceeds in a high temperature environment exceeding 125 ℃, for example, and the film resistance value of the divided electrode disposed on the anode side increases. If the film resistance value of the divided electrode is increased, a current necessary for operating the fuse in the vapor deposition pattern cannot be supplied, and a short-circuit failure may occur.
Patent document 2 discloses that the self-recovery performance of an undivided electrode can be improved by making the membrane resistance value of the undivided electrode higher than that of a divided electrode. However, patent document 2 does not describe where the divided electrode and the undivided electrode are disposed between the anode and the cathode.
However, in patent document 2, if a non-divided electrode having a high membrane resistance is disposed on the anode side, there is a problem that an anodic oxidation reaction proceeds at the non-divided electrode having an originally high membrane resistance, and the membrane resistance further increases. On the other hand, if a non-divided electrode having a high membrane resistance is disposed on the cathode side, the same problem as in patent document 1 occurs.
Under such circumstances, a thin film capacitor is desired which is less likely to deteriorate in fuse operability even in a high-temperature environment exceeding 125 ℃.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a thin film capacitor in which the operability of a fuse is not easily lowered even in a high temperature environment exceeding 125 ℃.
Means for solving the problems
The utility model discloses a film capacitor possesses: a1 st dielectric thin film made of resin and having a1 st main surface and a 2 nd main surface; a1 st electrode layer facing the 1 st main surface of the 1 st dielectric thin film; a 2 nd electrode layer facing the 2 nd main surface of the 1 st dielectric thin film; a 2 nd dielectric thin film made of a resin, laminated on the 1 st dielectric thin film with the 1 st electrode layer or the 2 nd electrode layer interposed therebetween, and having a 3 rd main surface and a 4 th main surface; a1 st external electrode provided to be electrically connected to the 1 st electrode layer; and a 2 nd external electrode provided to be electrically connected to the 2 nd electrode layer, wherein the 1 st external electrode is a cathode-side external electrode, the 2 nd external electrode is an anode-side external electrode, the 1 st electrode layer has a1 st electrode pattern in which 1 st regions partitioned by slits are connected to each other via a fuse portion, the 2 nd electrode layer has a 2 nd region having an area larger than that of the 1 st region, and a thickness of the 2 nd electrode layer is larger than that of the 1 st electrode layer.
Effect of the utility model
According to the present invention, a thin film capacitor in which the fuse operability is not easily lowered even in a high temperature environment exceeding 125 ℃.
Drawings
Fig. 1 is a cross-sectional view schematically showing an example of a film capacitor according to the present invention.
Fig. 2 is a perspective view schematically showing an example of a method of obtaining a wound body constituting the film capacitor shown in fig. 1.
Fig. 3 is a perspective view schematically showing another example of the wound body constituting the film capacitor shown in fig. 1.
Fig. 4A is a plan view schematically showing an example of the 1 st electrode layer, and fig. 4B is a plan view schematically showing an example of the 2 nd electrode layer.
Fig. 5A and 5B are perspective views schematically showing an example of a method of using the film capacitor shown in fig. 1.
Fig. 6 is a cross-sectional view schematically showing another example of the film capacitor of the present invention.
Fig. 7 is a perspective view schematically showing an example of a wound body constituting the film capacitor shown in fig. 6.
Fig. 8 is a perspective view schematically showing another example of the wound body constituting the film capacitor shown in fig. 6.
Detailed Description
Hereinafter, the film capacitor of the present invention will be described.
However, the present invention is not limited to the following configuration, and can be applied with appropriate modifications within the scope not changing the gist of the present invention.
The present invention is also applicable to a structure in which two or more preferable structures of the present invention described below are combined.
[ film capacitor ]
The utility model discloses a film capacitor possesses: a1 st dielectric thin film made of resin and having a1 st main surface and a 2 nd main surface; a1 st electrode layer facing the 1 st main surface of the 1 st dielectric thin film; a 2 nd electrode layer facing the 2 nd main surface of the 1 st dielectric thin film; a 2 nd dielectric thin film made of a resin, laminated on the 1 st dielectric thin film with the 1 st electrode layer or the 2 nd electrode layer interposed therebetween, and having a 3 rd main surface and a 4 th main surface; a1 st external electrode provided to be electrically connected to the 1 st electrode layer; and a 2 nd external electrode provided to be electrically connected to the 2 nd electrode layer, wherein the 1 st external electrode is a cathode-side external electrode, the 2 nd external electrode is an anode-side external electrode, the 1 st electrode layer has a1 st electrode pattern in which 1 st regions partitioned by slits are connected to each other via a fuse portion, the 2 nd electrode layer has a 2 nd region having an area larger than that of the 1 st region, and a thickness of the 2 nd electrode layer is larger than that of the 1 st electrode layer.
The utility model discloses a film capacitor, through making the thickness thickening of the 2 nd electrode layer of being connected with the external electrode of positive pole side to can make the membrane resistance value of 2 nd electrode layer descend, restrain going on of anodic oxidation reaction. Further, since the 1 st electrode layer having the 1 st electrode pattern in which the 1 st regions partitioned by the slits are connected to each other via the fuse portion is disposed on the cathode side, the anodic oxidation reaction does not proceed, and the fuse operability is not easily deteriorated even in a high-temperature environment exceeding 125 ℃.
Further, since the thickness of the 1 st electrode layer connected to the external electrode on the anode side is smaller than the thickness of the 2 nd electrode layer, the film resistance value of the 1 st electrode layer is high, and the fuse operability can be improved.
In the film capacitor of the present invention, the 1 st dielectric film and the 2 nd dielectric film may be wound in a laminated state, and the 1 st dielectric film and the 2 nd dielectric film may be repeatedly laminated.
Hereinafter, a wound film capacitor will be described as an example of the film capacitor of the present invention.
Fig. 1 is a cross-sectional view schematically showing an example of a film capacitor according to the present invention, fig. 2 is a perspective view schematically showing an example of a method of obtaining a wound body constituting the film capacitor shown in fig. 1, and fig. 3 is a perspective view schematically showing another example of a wound body constituting the film capacitor shown in fig. 1.
The film capacitor 1 shown in fig. 1 includes a roll 51, and the roll 51 is formed by rolling a1 st dielectric film 10, a 2 nd dielectric film 20, a1 st electrode layer 30, and a 2 nd electrode layer 40 in a laminated state.
The 1 st electrode layer 30 is provided on the 1 st main surface 11 of the 1 st dielectric thin film 10.
The 2 nd electrode layer 40 is provided on the 3 rd main surface 21 of the 2 nd dielectric thin film 20.
The thickness of the 2 nd electrode layer 40 is greater than the thickness of the 1 st electrode layer 30.
The 1 st external electrode 61 is formed at one end of the roll 51, and the 1 st external electrode 61 is electrically connected to the 1 st electrode layer 30.
The 1 st external electrode 61 is a cathode-side external electrode.
The 2 nd external electrode 62 is formed at the other end of the roll 51, and the 2 nd external electrode 62 is electrically connected to the 2 nd electrode layer 40.
The 2 nd external electrode 62 is an anode-side external electrode.
The 1 st external electrode 61 is connected to a1 st lead terminal 71, and the 2 nd external electrode 62 is connected to a 2 nd lead terminal 72.
Since the length of the 2 nd lead terminal 72 is longer than that of the 1 st lead terminal, the 2 nd lead terminal 72 and the 1 st lead terminal 71 are in a distinguishable state when the film capacitor 1 is viewed from the outside.
As shown in fig. 2, in the roll 50, the 1 st dielectric film 10 is wound outside the 2 nd dielectric film 20.
The 2 nd electrode layer 40 is provided on the outer principal surface (the 3 rd principal surface 21) of the 2 nd dielectric thin film 20. Further, the 1 st electrode layer 30 is provided on the outer main surface (the 1 st main surface 11) of the 1 st dielectric thin film 10.
The wound body 51 shown in fig. 1 and 3 can be obtained by deforming the wound body 50 shown in fig. 2.
In the film capacitor of the present invention, in the 1 st dielectric film, the surface roughness of the 1 st main surface is preferably smaller than the surface roughness of the 2 nd main surface.
When the surface roughness of the dielectric thin film is large, a defect which becomes a starting point of oxidation degradation is easily formed on the surface of the 1 st electrode layer having the 1 st electrode pattern in which the 1 st regions divided by the slits are connected to each other via the fuse portion. Therefore, by providing the 1 st electrode layer on the 1 st main surface having smaller surface roughness, oxidation degradation of the 1 st electrode layer can be suppressed.
In the thin-film capacitor shown in fig. 1, the surface roughness of the 1 st main surface 11 is smaller than the surface roughness of the 2 nd main surface 12.
In fig. 1, one of the two main surfaces (the 1 st main surface 11 and the 2 nd main surface 12) of the 1 st dielectric thin film 10 having a relatively large surface roughness (the 2 nd main surface 12) is shown by a wavy line, and one of the two main surfaces (the 1 st main surface 11) having a relatively small surface roughness is shown by a straight line.
In the thin film capacitor of the present invention, it is preferable that the 2 nd dielectric thin film has a surface roughness of the 4 th main surface larger than a surface roughness of the 3 rd main surface, and is stacked such that the 4 th main surface faces the 1 st electrode layer.
When the 4 th main surface having a larger surface roughness is laminated to face the 1 st electrode layer, a space for the operation of the fuse portion to evaporate is easily secured between the 1 st electrode layer and the 4 th main surface, and the fuse operability is improved.
In the thin-film capacitor 1 shown in fig. 1, the surface roughness of the 4 th main surface 22 is larger than the surface roughness of the 3 rd main surface 21, and the 4 th main surface 22 and the 1 st electrode layer 30 are laminated so as to face each other.
In fig. 1, the main surface (the 4 th main surface 22) having a relatively large surface roughness among the two main surfaces (the 3 rd main surface 21 and the 4 th main surface 22) of the 2 nd dielectric thin film 20 is shown by wavy lines, and the main surface (the 3 rd main surface 21) having a relatively small surface roughness is shown by straight lines.
In the film capacitor of the present invention, the surface roughness of the 1 st main surface is preferably 1 μm or more and 10 μm or less, and more preferably 1 μm or more and less than 10 μm.
In the film capacitor of the present invention, the surface roughness of the 2 nd main surface is preferably 10 μm or more and 100 μm or less.
In the film capacitor of the present invention, the surface roughness of the 3 rd main surface is preferably 1 μm or more and 10 μm or less, and more preferably 1 μm or more and less than 10 μm.
In the film capacitor of the present invention, the surface roughness of the 4 th main surface is preferably 10 μm or more and 100 μm or less.
The surface roughness of the 1 st major surface, the 2 nd major surface, the 3 rd major surface, and the 4 th major surface means a surface roughness measured in JIS B0601: 2013, the arithmetic average roughness Ra. The surface roughness Ra can be measured using a non-contact laser surface roughness meter (for example, VK-X210 manufactured by KEYENCE corporation).
In the thin film capacitor of the present invention, the 1 st electrode layer has the 1 st electrode pattern in which the 1 st regions partitioned by the slit are connected to each other via the fuse portion.
The 1 st electrode layer preferably further includes an effective electrode portion facing the 2 nd electrode layer, and an electrode lead-out portion provided in a stripe shape along one side end of the 1 st dielectric thin film.
In this case, the effective electrode portion and the electrode lead-out portion are preferably separated by an electrode separation slit arranged in parallel with the electrode lead-out portion, and are connected by a fuse portion partially crossing the electrode separation slit.
Further, the 1 st main surface includes a portion (hereinafter, also referred to as a1 st margin portion) which is provided in a band shape along a side end opposite to a side end provided with the electrode lead-out portion and on which the 1 st electrode layer is not provided.
Fig. 4A is a plan view schematically showing an example of the 1 st electrode layer.
As shown in fig. 4A, the 1 st electrode layer 30 is provided on the 1 st main surface 11 of the 1 st dielectric thin film 10.
The 1 st electrode layer 30 has an effective electrode portion 32 facing the 2 nd electrode layer 40, and an electrode lead portion 31 provided in a strip shape along one end portion 10a of the 1 st dielectric thin film 10.
The effective electrode portion 32 and the electrode lead portion 31 are separated by an electrode separation slit 33 arranged in parallel with the electrode lead portion 31, and are connected by a fuse portion 34 that partially crosses the electrode separation slit 33. The effective electrode portion 32 has a1 st electrode pattern in which 1 st regions 35 partitioned by the electrode separating slit 33 and the partitioning slit 36 (also collectively referred to as slits) are connected to each other via the fuse portion 34.
Further, in the 1 st main surface 11, a1 st remaining portion 11a where the 1 st electrode layer 30 is not provided is present at the other end portion 10b of the 1 st dielectric thin film 10.
In the thin film capacitor of the present invention, the 2 nd electrode layer has the 2 nd region having an area larger than the 1 st region.
The 2 nd region may be a region divided by a slit or a region not divided by a slit.
The 2 nd electrode layer preferably further includes an effective electrode portion facing the 1 st electrode layer, and an electrode lead-out portion provided in a strip shape along the other side end of the 1 st dielectric thin film (the side end opposite to the side end of the electrode lead-out portion on which the 1 st electrode layer is provided).
Fig. 4B is a plan view schematically showing an example of the 2 nd electrode layer.
As shown in fig. 4B, the 2 nd electrode layer 40 is provided on the 3 rd main surface 21 of the 2 nd dielectric thin film 20.
The 2 nd electrode layer 40 includes an electrode lead-out portion 41 provided in a stripe shape along the other end portion 20b of the 2 nd dielectric thin film 20 and an effective electrode portion 42 facing the 1 st electrode layer 30. No slit or the like is provided between the electrode lead-out portion 41 and the effective electrode portion 42. Since the 2 nd electrode layer 40 is not provided with a slit or the like, the 2 nd electrode layer 40 can be said to have the 2 nd region having an area larger than the 1 st region.
Further, in the 3 rd main surface 21, a 2 nd margin portion 21a where the 2 nd electrode layer 40 is not provided is present at the one end portion 20a of the 2 nd dielectric thin film 20.
In fig. 4B, an example of the 2 nd electrode layer having the 2 nd region not divided by the slit is described, but the 2 nd electrode layer may have the 2 nd region divided by the slit. However, the area of the 2 nd region is larger than that of the 1 st region. The 2 nd regions divided by the slit may be connected to each other via the fuse portion.
When the areas of the 1 st regions are different, the average area of the 1 st region is used for comparison with the area of the 2 nd region. The region existing in the 2 nd electrode layer and having an average area larger than that of the 1 st region is the 2 nd region. The 2 nd electrode layer may have a region having an area smaller than that of the 1 st region as a region other than the 2 nd region.
The ratio of the area of the 2 nd region to the area of the 1 st region is preferably 150% or more, and more preferably 200% or more.
In the effective electrode portion of the 1 st electrode layer, the ratio of the area that does not contribute to the capacitor capacitance is preferably 5% or more and 10% or less.
In the effective electrode portion of the 2 nd electrode layer, the ratio of the area not contributing to the capacitor capacitance is preferably 0% or more and less than 5%. The case where the ratio of the area not contributing to the capacitor capacitance is 0% is a so-called full-plate pattern.
In the film capacitor of the present invention, the wound body is pressed into a flat shape having an oval or oblong cross-sectional shape, and preferably, a more compact shape.
The aspect ratio of the cross-sectional shape of the roll is preferably less than 0.7. When the flatness ratio in the cross-sectional shape of the wound body is 0.7 or more, vibration and ringing of the film capacitor may increase.
The flattening factor f can be obtained by using f ═ [ (a-b)/b ] based on the major axis a and the minor axis b when the outer shape of the wound body is measured with a vernier or the like.
In the film capacitor of the present invention, the wound body may have a cylindrical winding shaft. The winding shaft is disposed on the central axis of the 1 st dielectric film and the 2 nd dielectric film in a wound state, and serves as a winding shaft for winding the 1 st dielectric film and the 2 nd dielectric film.
The film capacitor of the present invention may be connected to the terminal conductor and the lead terminal at the 1 st external electrode and the 2 nd external electrode, respectively.
The thin film capacitor 1 shown in fig. 1 includes a1 st lead terminal 71 connected to the 1 st external electrode 61, and a 2 nd lead terminal 72 connected to the 2 nd external electrode 62.
A film capacitor in which the 1 st external electrode 61 and the 2 nd external electrode are omitted from the film capacitor 1 shown in fig. 1, and a film capacitor provided with the 1 st terminal conductor and the 2 nd terminal conductor in place of the 1 st external electrode 61 and the 2 nd external electrode 62 are also a film capacitor of the present invention.
The utility model discloses a film capacitor has been designated polarity.
Specifically, the 1 st external electrode is an external electrode on the cathode side, and the 2 nd external electrode is an external electrode on the anode side.
The method of distinguishing the polarity is not particularly limited, and there may be mentioned a method of changing the length of the lead terminal connected to the anode side and the length of the lead terminal connected to the cathode side (for example, making the length of the lead terminal connected to the anode side longer than the length of the lead terminal connected to the cathode side), a method of applying a design such as a design capable of distinguishing the polarity to the surface of the thin film capacitor, and the like.
In the thin film capacitor 1 shown in fig. 1, the length of the 2 nd lead terminal 72 connected to the 2 nd external electrode 62 serving as an external electrode on the anode side is longer than the length of the 1 st lead terminal 71 connected to the 1 st external electrode 61 serving as an external electrode on the cathode side.
In the film capacitor of the present invention, it is preferable that the 1 st dielectric film and the 2 nd dielectric film are wound in a stacked state, and the surface roughness of the main surface on the winding core side of both the 1 st dielectric film and the 2 nd dielectric film is larger than the surface roughness of the main surface on the opposite side to the winding core.
When the surface roughness of the main surface on the core side is larger than the surface roughness of the main surface on the opposite side of the core, when the 1 st dielectric thin film and the 2 nd dielectric thin film are stacked and wound, an air layer is not easily formed between the winding roll used for winding and the main surface on the core side of the laminate, and the thin film is not easily bent. Therefore, the adhesion between the 1 st dielectric film and the 2 nd dielectric film at the time of winding is improved, and a film capacitor having high thermal shock resistance and high current resistance is obtained.
The utility model discloses a film capacitor can cover around through outer dress resin, also can hold in outer dress casing and pack in outer dress casing and have the packing resin.
As the material of the outer resin or the filler resin, for example, a thermosetting resin such as an epoxy resin, a silicone resin, or a urethane resin can be used. As the curing agent for the epoxy resin, an amine curing agent or an imidazole curing agent may be used. Further, the outer resin or the filler resin may be solely made of a resin, but a reinforcing agent may be added for the purpose of improving the strength. As the reinforcing agent, silica, alumina, or the like can be used.
As a material of the outer case, for example, a resin such as polyphenylene sulfide (PPS) or Liquid Crystal Polymer (LCP) can be used.
An example of a case where the film capacitor of the present invention is housed in the outer case will be described with reference to fig. 5A and 5B.
Fig. 5A and 5B are perspective views schematically showing an example of a method of using the film capacitor shown in fig. 1.
As shown in fig. 5A, film capacitor 1 is accommodated in outer case 80.
Next, as shown in fig. 5B, the filling resin 90 is filled into the outer case 80, and the periphery of the film capacitor 1 is covered with the filling resin 90, and the opening of the outer case 80 is sealed.
In such a method of use, the moisture resistance of the thin film capacitor is improved.
In the thin film capacitor of the present invention, the positions where the 1 st electrode layer and the 2 nd electrode layer are provided are not particularly limited, and both the case where the 1 st electrode layer and the 2 nd electrode layer are provided on different dielectric thin films and the case where the 1 st electrode layer and the 2 nd electrode layer are provided on the same dielectric thin film are exemplified.
When the 1 st electrode layer and the 2 nd electrode layer are provided on different dielectric thin films, it is preferable that the 1 st electrode layer is provided on the 1 st main surface of the 1 st dielectric thin film, and the 2 nd electrode layer is provided on the 3 rd main surface of the 2 nd dielectric thin film.
In the roll-up (roll-up 51 in fig. 1, and roll-up 50 in fig. 2) shown in fig. 1 and 2, the 1 st electrode layer 30 is provided on the 1 st main surface 11 of the 1 st dielectric thin film 10, and the 2 nd electrode layer 40 is provided on the 3 rd main surface 21 of the 2 nd dielectric thin film 20.
When the 1 st electrode layer and the 2 nd electrode layer are provided on the same dielectric thin film, it is preferable that the 1 st electrode layer is provided on the 1 st main surface of the 1 st dielectric thin film, and the 2 nd electrode layer is provided on the 2 nd main surface of the 1 st dielectric thin film. In this case, no electrode layer is provided on the 2 nd dielectric film.
An example of a case where the 1 st electrode layer and the 2 nd electrode layer are provided on the same dielectric thin film will be described with reference to fig. 6, 7, and 8.
Fig. 6 is a cross-sectional view schematically showing another example of the film capacitor of the present invention, fig. 7 is a perspective view schematically showing an example of a wound body constituting the film capacitor shown in fig. 6, and fig. 8 is a perspective view schematically showing another example of a wound body constituting the film capacitor shown in fig. 6.
As shown in fig. 6, the film capacitor 2 includes a roll 53 formed by winding a1 st dielectric film 10, a 2 nd dielectric film 20, a1 st electrode layer 30, and a 2 nd electrode layer 40 in a laminated manner.
Width W of the 2 nd dielectric film 20 2 Less than the width W of the 1 st dielectric film 10 1 Further, a 2 nd dielectric film 20 is disposed between one end 10a and the other end 10b of the 1 st dielectric film 10.
The 1 st electrode layer 30 is provided on the 1 st main surface 11 of the 1 st dielectric thin film 10.
The 2 nd electrode layer 40 is provided on the 2 nd main surface 12 of the 1 st dielectric thin film 10.
The thickness of the 2 nd electrode layer 40 is greater than the thickness of the 1 st electrode layer 30.
A1 st external electrode 61, which is an external electrode on the cathode side, is formed on one end of the roll 53, and the 1 st external electrode 61 is electrically connected to the 1 st electrode layer 30.
A 2 nd external electrode 62 as an external electrode on the anode side is formed at the other end of the roll body 53, and the 2 nd external electrode 62 is electrically connected to the 2 nd electrode layer 40.
The 1 st external electrode 61 is connected to a1 st lead terminal 71, and the 2 nd external electrode 62 is connected to a 2 nd lead terminal 72.
Since the length of the 2 nd lead terminal 72 is longer than the length of the 1 st lead terminal 71, the 2 nd lead terminal 72 and the 1 st lead terminal 71 are in a distinguishable state when the film capacitor 2 is viewed from the outside.
As shown in fig. 7, in the roll 52, the 2 nd dielectric film 20 is wound outside the 1 st dielectric film.
The 1 st electrode layer 30 is provided on the outer main surface (1 st main surface 11) of the 1 st dielectric thin film 10. Further, a 2 nd electrode layer 40 is provided on the inner main surface (2 nd main surface 12) of the 1 st dielectric thin film 10.
The wound body 53 shown in fig. 6 and 8 can be obtained by deforming the wound body 52 shown in fig. 7.
In the film capacitor of the present invention, when the 1 st electrode layer and the 2 nd electrode layer are provided on the same dielectric thin film, it is preferable that the 2 nd dielectric thin film is wound outside the 1 st dielectric thin film, the width of the 2 nd dielectric thin film is smaller than the width of the 1 st dielectric thin film in a cross section along the direction of the winding core, and the 2 nd dielectric thin film is disposed between one end portion and the other end portion of the 1 st dielectric thin film.
When the 2 nd dielectric film is wound outside the 1 st dielectric film, the width of the 2 nd dielectric film is smaller than the width of the 1 st dielectric film in a cross section along the winding core, and the 2 nd dielectric film is disposed between one end and the other end of the 1 st dielectric film, both the one end and the other end of the 1 st dielectric film protrude outside (both ends of the winding axis) the 2 nd dielectric film, so that the area of the electrode layer (the 1 st electrode layer and the 2 nd electrode layer) formed on the surface of the 1 st dielectric film, which is in contact with the external electrode, increases, and the contact between the electrode layer and the external electrode improves.
In the film capacitor of the present invention, when the 1 st electrode layer and the 2 nd electrode layer are provided on the same dielectric thin film and the 2 nd dielectric thin film is wound outside the 1 st dielectric thin film, it is preferable that one end portion of the 2 nd dielectric thin film is disposed at a position overlapping with the electrode lead-out portion of the 1 st electrode layer in a state where the 1 st dielectric thin film and the 2 nd dielectric thin film are stacked.
The 2 nd dielectric thin film has light transmittance from the visible region to the infrared region, and thus it is difficult to recognize the outline thereof by image recognition or the like. However, when the electrode lead-out portion (a portion of the 1 st electrode layer) is disposed on the back side (inside) of one end portion (a portion of the outline) of the 2 nd dielectric thin film wound on the outside, the electrode lead-out portion having low light transmittance from the visible region to the infrared region becomes a background, and the outline of the 2 nd dielectric thin film is easily recognized by image recognition or the like. Therefore, it becomes easy to control the shift width of the film by image recognition or the like, and it is possible to suppress the deterioration of the thermal shock resistance and the current resistance due to the deviation of the film at the time of winding.
[ other preferred structures ]
In the thin film capacitor of the present invention, the 1 st dielectric thin film and the 2 nd dielectric thin film preferably contain a curable resin as a main component.
In the present specification, the term "main component" means a component present in the largest proportion (% by weight), and preferably means a component present in a proportion exceeding 50% by weight. Therefore, the dielectric resin thin film may contain, for example, an additive such as a silicone resin, and uncured portions of starting materials such as a1 st organic material and a 2 nd organic material described later as components other than the main components.
The curable resin may be a thermosetting resin or a photocurable resin.
In the present specification, the thermosetting resin means a resin that can be cured by heat, and is not limited to a curing method. Therefore, as long as the resin is curable by heat, a resin that is curable by a method other than heat (for example, light, electron beam, or the like) is also included in the thermosetting resin. Further, depending on the material, the reaction may be initiated by the reactivity of the material itself, and a material which does not necessarily promote curing by external heat or light is also used as the thermosetting resin. The same applies to the photocurable resin, and the curing method is not limited.
The curable resin may or may not have at least one of a urethane bond and a urea bond.
In addition, the presence of urethane bonds and/or urea bonds can be confirmed using a fourier transform infrared spectrophotometer (FT-IR).
The dielectric resin film is preferably formed of a cured product of the 1 st organic material and the 2 nd organic material. For example, a cured product obtained by reacting a hydroxyl group (OH group) of the 1 st organic material with an isocyanate group (NCO group) of the 2 nd organic material may be mentioned.
In the case where a cured product is obtained by the above reaction, uncured portions of the starting material may remain in the film. For example, the dielectric resin film may contain at least one of an isocyanate group (NCO group) and a hydroxyl group (OH group). In this case, the dielectric resin film may contain either an isocyanate group or a hydroxyl group, or both an isocyanate group and a hydroxyl group.
The presence of the isocyanate group and/or the hydroxyl group can be confirmed by a fourier transform infrared spectrophotometer (FT-IR).
The 1 st organic material is preferably a polyol having a plurality of hydroxyl groups (OH groups) in the molecule. Examples of the polyol include polyvinyl acetal such as polyvinyl acetal, polyether polyol such as phenoxy resin, and polyester polyol. As the 1 st organic material, 2 or more kinds of organic materials may be used simultaneously.
The 2 nd organic material is preferably an isocyanate compound having a plurality of functional groups in the molecule, an epoxy resin, or a melamine resin. As the 2 nd organic material, 2 or more kinds of organic materials may be used simultaneously.
Examples of the isocyanate compound include aromatic polyisocyanates such as diphenylmethane diisocyanate (MDI) and Toluene Diisocyanate (TDI), and aliphatic polyisocyanates such as Hexamethylene Diisocyanate (HDI). These polyisocyanates may be modified, for example, with carbodiimide or urethane.
The epoxy resin is not particularly limited as long as it is a resin having an epoxy ring, and examples thereof include bisphenol a type epoxy resins, biphenyl skeleton epoxy resins, cyclopentadiene skeleton epoxy resins, naphthalene skeleton epoxy resins, and the like.
The melamine resin is not particularly limited as long as it is an organic nitrogen compound having a triazine ring at the center of the structure and 3 amino groups at the periphery thereof, and examples thereof include alkylated melamine resins. In addition, a modified form of melamine may be used.
In the film capacitor of the present invention, the 1 st dielectric film and the 2 nd dielectric film are preferably obtained by molding a resin solution containing the 1 st organic material and the 2 nd organic material into a film shape, and then curing the film by heat treatment.
In the thin film capacitor of the present invention, the 1 st dielectric film and the 2 nd dielectric film may further contain an additive for adding another function. Smoothness can be imparted, for example, by adding a leveler. The additive is more preferably a material having a functional group that reacts with a hydroxyl group and/or an isocyanate group and forming part of the crosslinked structure of the cured product. Examples of such a material include a resin having at least 1 functional group selected from the group consisting of an epoxy group, a silanol group, and a carboxyl group.
In the thin film capacitor of the present invention, the 1 st dielectric thin film and the 2 nd dielectric thin film may contain a vapor deposition polymerized film as a main component. The vapor-deposited polymer film is a film formed by a vapor deposition polymerization method, and is basically contained in a curable resin.
In the film capacitor of the present invention, it is preferable that the resin constituting the 1 st dielectric film and the resin constituting the 2 nd dielectric film are both thermosetting resins.
In the film capacitor of the present invention, the thicknesses of the 1 st dielectric film and the 2 nd dielectric film are not particularly limited, but are preferably 0.5 μm or more and 5 μm or less, respectively.
Preferably, the thickness of the 1 st dielectric film is the same as the thickness of the 2 nd dielectric film.
The thicknesses of the 1 st dielectric thin film and the 2 nd dielectric thin film can be measured by an optical film thickness meter.
In the thin film capacitor of the present invention, the 1 st dielectric thin film and the 2 nd dielectric thin film are preferably made of the same material. Here, the 1 st dielectric thin film and the 2 nd dielectric thin film are made of the same material, which means that the kind of the resin constituting the 1 st dielectric thin film and the 2 nd dielectric thin film is the same, and when other components are included, the kind and the content of the other components are also the same.
If the 1 st dielectric thin film and the 2 nd dielectric thin film are made of the same material, the manufacturing cost can be suppressed.
In the film capacitor of the present invention, the kind of metal included in the 1 st electrode layer and the 2 nd electrode layer (hereinafter, also collectively referred to as electrode layers) is not particularly limited, but the electrode layers preferably include any 1 kind selected from the group consisting of aluminum (a1), titanium (Ti), zinc (Zn), magnesium (Mg), tin (Sn), and nickel (Ni).
In the thin film capacitor of the present invention, the thickness of the electrode layer is not particularly limited, but the thickness of the electrode layer is preferably 5nm or more and 40nm or less from the viewpoint of suppressing breakage of the electrode layer.
The thickness of the electrode layer can be determined by observing a cross section of the 1 st dielectric thin film cut in the thickness direction with an electron microscope such as a field emission scanning electron microscope (FE-SEM).
Description of the reference numerals
1. 2 a thin film capacitor;
10a one end portion of the 1 st dielectric film;
10b the other end portion of the 1 st dielectric film;
12 a 2 nd main surface;
20a 2 nd dielectric film;
20a one end portion of the 2 nd dielectric film;
20b the other end portion of the 2 nd dielectric film;
21a 3 rd main surface;
21a 2 nd margin part;
22 a 4 th main surface;
30 a1 st electrode layer;
31 an electrode lead-out portion of the 1 st electrode layer;
32 an effective electrode portion of the 1 st electrode layer;
33 electrode separation slit;
34 a fuse part;
35 area 1;
36 dividing the slit;
40 a 2 nd electrode layer;
41 an electrode lead-out portion of the 2 nd electrode layer;
42 an effective electrode portion (2 nd region) of the 2 nd electrode layer;
50. 51, 52, 53 windings;
61 the 1 st external electrode;
62 nd 2 nd external electrode;
71 a1 st lead terminal;
72 a 2 nd lead terminal;
80 an outer case;
90 is filled with resin.
Claims (11)
1. A film capacitor is provided with:
a1 st dielectric thin film made of resin and having a1 st main surface and a 2 nd main surface;
a1 st electrode layer facing the 1 st main surface of the 1 st dielectric thin film;
a 2 nd electrode layer facing the 2 nd main surface of the 1 st dielectric thin film;
a 2 nd dielectric thin film made of a resin, laminated on the 1 st dielectric thin film with the 1 st electrode layer or the 2 nd electrode layer interposed therebetween, and having a 3 rd main surface and a 4 th main surface;
a1 st external electrode disposed to be electrically connected to the 1 st electrode layer; and
a 2 nd external electrode disposed to be electrically connected to the 2 nd electrode layer,
the thin-film capacitor is characterized in that,
the 1 st external electrode is an external electrode of a cathode side,
the 2 nd external electrode is an external electrode on the anode side,
the 1 st electrode layer has a1 st electrode pattern in which 1 st regions divided by slits are connected to each other via a fuse portion,
the 2 nd electrode layer has a 2 nd region having an area larger than the 1 st region,
the thickness of the 2 nd electrode layer is greater than that of the 1 st electrode layer.
2. A film capacitor according to claim 1,
the 1 st electrode layer is provided on the 1 st main surface of the 1 st dielectric thin film,
the 2 nd electrode layer is provided on the 3 rd main surface of the 2 nd dielectric thin film.
3. A film capacitor according to claim 1,
the 1 st electrode layer is provided on the 1 st main surface of the 1 st dielectric thin film,
the 2 nd electrode layer is provided on the 2 nd main surface of the 1 st dielectric thin film.
4. A film capacitor according to claim 2 or 3,
in the 1 st dielectric thin film, the surface roughness of the 1 st main surface is smaller than the surface roughness of the 2 nd main surface.
5. A film capacitor according to claim 4,
in the 2 nd dielectric thin film, the surface roughness of the 4 th main surface is larger than the surface roughness of the 3 rd main surface,
the 4 th main surface and the 1 st electrode layer are stacked so as to face each other.
6. A film capacitor according to claim 2 or 3,
the 1 st dielectric film and the 2 nd dielectric film are wound in a laminated state,
in both the 1 st dielectric thin film and the 2 nd dielectric thin film, the surface roughness of the main surface on the core side is larger than the surface roughness of the main surface on the opposite side to the core.
7. A film capacitor according to claim 6,
in the 1 st dielectric thin film, the surface roughness of the 1 st main surface is smaller than the surface roughness of the 2 nd main surface,
in the 2 nd dielectric thin film, the surface roughness of the 4 th main surface is larger than the surface roughness of the 3 rd main surface,
the 4 th main surface and the 1 st electrode layer are stacked so as to face each other.
8. A film capacitor according to claim 3,
the 1 st dielectric film and the 2 nd dielectric film are wound in a laminated state,
the 2 nd dielectric film is wound outside the 1 st dielectric film,
in a cross section along a winding core direction, the 2 nd dielectric thin film has a width smaller than that of the 1 st dielectric thin film, and the 2 nd dielectric thin film is disposed between one end and the other end of the 1 st dielectric thin film.
9. A film capacitor according to claim 8,
the 1 st electrode layer further includes: an effective electrode portion facing the 2 nd electrode layer; and an electrode lead-out portion provided in a band shape along one side end of the 1 st dielectric thin film and connected to the 1 st external electrode,
the effective electrode portion and the electrode lead-out portion are separated by an electrode separation slit arranged in parallel with the electrode lead-out portion and connected by the fuse portion partially crossing the electrode separation slit,
in a state where the 1 st dielectric thin film and the 2 nd dielectric thin film are laminated, one end portion of the 2 nd dielectric thin film is disposed at a position overlapping with the electrode lead-out portion.
10. A film capacitor according to any one of claims 1 to 3,
the 1 st dielectric film and the 2 nd dielectric film are made of the same material.
11. A film capacitor in accordance with any one of claims 1 to 3,
the resin constituting the 1 st dielectric film and the resin constituting the 2 nd dielectric film are both thermosetting resins.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019146345 | 2019-08-08 | ||
| JP2019-146345 | 2019-08-08 | ||
| PCT/JP2020/018696 WO2021024565A1 (en) | 2019-08-08 | 2020-05-08 | Film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217134211U true CN217134211U (en) | 2022-08-05 |
Family
ID=74503400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202090000731.5U Active CN217134211U (en) | 2019-08-08 | 2020-05-08 | Thin film capacitor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7301975B2 (en) |
| CN (1) | CN217134211U (en) |
| WO (1) | WO2021024565A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022210130A1 (en) * | 2021-03-30 | 2022-10-06 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004095604A (en) * | 2002-08-29 | 2004-03-25 | Matsushita Electric Ind Co Ltd | Metallized film capacitor |
| JP2010165775A (en) * | 2009-01-14 | 2010-07-29 | Daikin Ind Ltd | Film capacitor |
| JP2017191823A (en) * | 2016-04-12 | 2017-10-19 | ニチコン株式会社 | Metalized film capacitor |
| JPWO2019142561A1 (en) * | 2018-01-18 | 2021-01-14 | パナソニックＩｐマネジメント株式会社 | Film capacitor |
-
2020
- 2020-05-08 JP JP2021537584A patent/JP7301975B2/en active Active
- 2020-05-08 CN CN202090000731.5U patent/CN217134211U/en active Active
- 2020-05-08 WO PCT/JP2020/018696 patent/WO2021024565A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021024565A1 (en) | 2021-02-11 |
| JP7301975B2 (en) | 2023-07-03 |
| JPWO2021024565A1 (en) | 2021-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111344825B (en) | Thin film capacitor | |
| CN113396464B (en) | Thin film capacitor | |
| JP6923171B2 (en) | Film capacitor | |
| CN111344824A (en) | Film capacitor and film for film capacitor | |
| CN217134211U (en) | Thin film capacitor | |
| US11664161B2 (en) | Film capacitor | |
| CN217157969U (en) | Thin film capacitor | |
| CN220914046U (en) | Thin film capacitor | |
| JP7404377B2 (en) | Film capacitor | |
| WO2021038970A1 (en) | Film capacitor | |
| CN216928302U (en) | Thin film capacitor | |
| JP2021190443A (en) | Film capacitor and film for film capacitor | |
| US20230230769A1 (en) | Film capacitor | |
| CN217507111U (en) | Thin film capacitor | |
| WO2023282077A1 (en) | Film capacitor | |
| WO2024014111A1 (en) | Capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |