CN216773263U - TCO laminated heterojunction solar structure - Google Patents
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- CN216773263U CN216773263U CN202123067756.2U CN202123067756U CN216773263U CN 216773263 U CN216773263 U CN 216773263U CN 202123067756 U CN202123067756 U CN 202123067756U CN 216773263 U CN216773263 U CN 216773263U
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Abstract
The utility model provides a TCO laminated heterojunction solar structure which comprises a substrate, wherein a front intrinsic amorphous silicon thin film, a front doped amorphous silicon thin film, a front first transparent conductive thin film, a front second transparent conductive thin film and a front metal electrode are sequentially arranged on the front surface of the substrate; the back surface of the substrate is sequentially provided with a back intrinsic amorphous silicon film, a back doped amorphous silicon film, a back first layer transparent conductive film, a back second layer transparent conductive film and a back metal electrode. The utility model greatly controls the structure of the heterojunction cell, solves the problem that the optical performance and the electrical performance can not be combined, further improves the conversion efficiency of the solar cell and reduces the cost.
Description
Technical Field
The utility model relates to the field of solar cell manufacturing, in particular to a TCO laminated heterojunction solar structure.
Background
In order to achieve carbon neutralization, rapid development of non-nuclear clean energy such as photovoltaic and the like is urgently required, and development of a solar cell with high efficiency and low cost is required, wherein the heterojunction solar cell is widely concerned due to high conversion efficiency, good low temperature coefficient and simple low-temperature process.
The existing heterojunction solar cell preparation process comprises the following steps: (1) etching and cleaning; (2) deposition of amorphous silicon; (3) TCO deposition; (4) and (4) screen printing an electrode. Since the emitter of the heterojunction solar cell has relatively poor lateral conductivity, current collection from the emitter through a metal electrode is insufficient, and therefore a TCO layer needs to be deposited on the amorphous silicon thin film to collect current. TCO films are both transparent and conductive. The resistivity of the TCO film is inversely proportional to the carrier concentration and the mobility, and the absorption of free carriers can be reduced by reducing the carrier concentration, so that the light transmittance is improved, but the reduction of the carrier concentration can cause the resistivity of the film to be increased to influence the conductivity of the TCO film. The optical and electrical properties of conventional TCOs cannot be combined. How to improve the heterojunction TCO film layer to improve the photoelectric conversion efficiency becomes important.
Therefore, providing a TCO film having both optical and electrical properties is a technical problem to be solved in the field of heterojunction solar energy.
SUMMERY OF THE UTILITY MODEL
The utility model is provided for solving the problem that the TCO film in the heterojunction solar cell can not have both optical performance and electrical performance in the prior art, and aims to provide a TCO laminated heterojunction solar cell structure, which can ensure that the TCO film still has good electric conductivity on one hand and has high light transmittance on the other hand, thereby being beneficial to improving the efficiency of the heterojunction solar cell.
In order to solve the above problems, the utility model provides a TCO laminated heterojunction solar structure, which adopts the following technical scheme:
a TCO laminated heterojunction solar structure comprises a substrate, wherein a front intrinsic amorphous silicon thin film, a front doped amorphous silicon thin film, a front first transparent conductive thin film, a front second transparent conductive thin film and a front metal electrode are sequentially arranged on the front surface of the substrate; the back surface of the substrate is sequentially provided with a back intrinsic amorphous silicon film, a back doped amorphous silicon film, a back first layer transparent conductive film, a back second layer transparent conductive film and a back metal electrode.
In the above technical solution, the thickness of the front intrinsic amorphous silicon thin film is equal to that of the back intrinsic amorphous silicon thin film.
In the above technical solution, the thickness of the front doped amorphous silicon thin film is greater than that of the back doped amorphous silicon thin film.
In the above technical solution, the front first layer transparent conductive film, the front second layer transparent conductive film, the back first layer transparent conductive film and the back second layer transparent conductive film have equal thickness.
In the above technical scheme, the light transmittance of the front first layer of transparent conductive film is greater than that of the front second layer of transparent conductive film, and the resistivity of the front first layer of transparent conductive film is less than that of the front second layer of transparent conductive film.
In the above technical solution, the light transmittance of the first transparent conductive film on the back surface is greater than that of the second transparent conductive film on the back surface, and the resistivity of the first transparent conductive film on the back surface is less than that of the second transparent conductive film on the back surface.
In the technical scheme, the front intrinsic amorphous silicon film and the back intrinsic amorphous silicon film are grown on the surface of the substrate through plasma chemical vapor deposition; and the front-side doped amorphous silicon film and the back-side doped amorphous silicon film grow on the corresponding front-side intrinsic amorphous silicon film or back-side intrinsic amorphous silicon film through plasma chemical vapor deposition.
In the technical scheme, the first transparent conductive film on the front surface is deposited on the surface of the front surface doped amorphous silicon film through magnetron sputtering; the second transparent conductive film on the front surface is deposited on the surface of the first transparent conductive film on the front surface through magnetron sputtering; the first transparent conductive film on the back is deposited on the surface of the doped amorphous silicon film on the front through magnetron sputtering; and the second transparent conductive film on the back is deposited on the surface of the first transparent conductive film on the back through magnetron sputtering.
In the above technical solution, the substrate is an N-type crystalline silicon substrate.
In the technical scheme, the front-doped amorphous silicon film is N-type amorphous silicon; the back doped amorphous silicon film is P-type amorphous silicon.
The utility model has the beneficial effects that:
the utility model provides a TCO laminated heterojunction solar structure, which has the advantages that the structure of an HJT cell is controlled to a great extent through the arrangement of double layers of transparent conductive films, the problem that optical performance and electrical performance cannot be achieved simultaneously is solved, the TCO film still keeps good conductive performance and has high light transmittance, the conversion efficiency of the solar cell is further improved, and the cost is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a TCO laminated heterojunction solar structure according to an embodiment of the present invention.
Wherein:
1. front metal electrode 2 and front second layer transparent conductive film
3. A first transparent conductive film 4 on the front surface and a doped amorphous silicon film on the front surface
5. Front intrinsic amorphous silicon film 6 and substrate
7. Back intrinsic amorphous silicon thin film 8, back doped amorphous silicon thin film
9. A first transparent conductive film 10 on the back surface, a second transparent conductive film on the back surface
11. A back metal electrode.
Detailed Description
The following detailed description of the present invention is provided in connection with the accompanying drawings and examples.
As shown in fig. 1, the utility model provides a TCO laminated heterojunction solar structure, which comprises a substrate 6, wherein a front intrinsic amorphous silicon thin film 5, a front doped amorphous silicon thin film 4, a front first transparent conductive thin film 3, a front second transparent conductive thin film 2 and a front metal electrode 1 are sequentially arranged on the front of the substrate 6; the back surface of the substrate 6 is sequentially provided with a back intrinsic amorphous silicon film 7, a back doped amorphous silicon film 8, a back first layer transparent conductive film 9, a back second layer transparent conductive film 10 and a back metal electrode 11.
In this embodiment, the substrate 6 is an N-type crystalline silicon substrate.
In the present embodiment, the front intrinsic amorphous silicon thin film 5 and the back intrinsic amorphous silicon thin film 7 have equal thickness. The thickness of the front-doped amorphous silicon thin film 4 is larger than that of the back-doped amorphous silicon thin film 8. The front doped amorphous silicon thin film 4 is N-type amorphous silicon; the back-doped amorphous silicon thin film 8 is P-type amorphous silicon. The front intrinsic amorphous silicon thin film 5 and the back intrinsic amorphous silicon thin film 7 are grown on the surface of the substrate 6 through plasma chemical vapor deposition; the front doped amorphous silicon thin film 4 and the back doped amorphous silicon thin film 8 grow on the corresponding front intrinsic amorphous silicon thin film 5 or back intrinsic amorphous silicon thin film 7 through plasma chemical vapor deposition.
In the present embodiment, the front first transparent conductive film 3, the front second transparent conductive film 2, the back first transparent conductive film 9 and the back second transparent conductive film 10 have the same thickness.
In this embodiment, the front and back first layers of transparent conductive films and the front and back second layers of transparent conductive films are deposited step by step. The light transmittance of the front first layer transparent conductive film 3 is greater than that of the front second layer transparent conductive film 2; the light transmittance of the back first layer transparent conductive film 9 is greater than that of the back second layer transparent conductive film 10. The first transparent conductive film on the front surface and the back surface has higher light transmittance and relatively high resistivity so as to just collect incident light and reduce light loss.
The resistivity of the front first layer transparent conductive film 3 is smaller than that of the front second layer transparent conductive film 2. The resistivity of the back first layer of transparent conductive film 9 is less than the resistivity of the back second layer of transparent conductive film 10. The second transparent conductive film on the front surface and the back surface has lower resistivity and relatively lower resistivity so as to form better ohmic contact, and meanwhile, the number of the fine grids of the emitting electrode can be correspondingly reduced, the light receiving area is increased, and the conversion efficiency of the cell is improved.
In this embodiment, the front first transparent conductive film 3 and the back first transparent conductive film 9 are deposited on the surface of the front doped amorphous silicon film 4 by magnetron sputtering, and the front second transparent conductive film 2 is deposited on the surface of the front first transparent conductive film 3 by magnetron sputtering; and the second transparent conductive film 10 on the back is deposited on the surface of the first transparent conductive film 9 on the back through magnetron sputtering.
According to the principle that the resistivity of the TCO thin film is in inverse proportion to the carrier concentration and the mobility, the absorption of free carriers can be reduced by reducing the carrier concentration, so that the light transmittance is improved, but the reduction of the carrier concentration can cause the resistivity of the thin film to be increased and influence the conductivity of the TCO thin film. Wherein, the technological conditions of oxygen flow, sputtering pressure, sputtering rate and the like in the actual production affect the photoelectric property of the TCO film.
In combination with the above principle, the carrier concentration is reduced according to a suitable oxygen flow rate, and the transmittance is gradually increased due to the reduction of carrier absorption. Therefore, in the present embodiment, the front first transparent conductive film 3 and the back first transparent conductive film 9 are formed by adjusting the oxygen flow rate to 1.8cm during the magnetron sputtering deposition3.min-1～2.2cm3.min-1And the light transmittance is more than 85%.
Meanwhile, when the sputtering pressure is relatively small, the gas is thin, the kinetic energy of sputtered atoms is large, and the sputtered atoms can fully react with oxygen ions on the substrate, so that the crystallinity is improved; and when the sputtering rate is low, the target material is sputtered to the substrate in a small quantity and can fully react with oxygen atoms, so that the film transmittance is high. In this embodiment, the front first transparent conductive film 3 and the back first transparent conductive film 9 are formed by adjusting the sputtering pressure to be between 0.3Pa and 0.5Pa during the magnetron sputtering deposition, and the low sputtering rate is 3.4nm.min-1～5.0nm.min-1Meanwhile, the light transmittance of the first TCO film layer is more than 85%, and the first TCO film layer has good crystallinity.
The mobility is maximized according to the relatively low oxygen flux, so as to realize a relatively low resistivity of the raw material, in this embodiment, the oxygen flow rate of the front second layer transparent conductive film 2 and the back second layer transparent conductive film 10 is adjusted to be 0.3cm during the magnetron sputtering deposition3.min-1～0.7 cm3.min-1The resistivity of the second layer of transparent conductive film is minimized.
Meanwhile, according to the principle that when the sputtering rate is high, the amount of the target sputtered on the substrate is large and the target cannot fully react with oxygen atoms, so that more oxygen vacancies are formed, and the carrier concentration is improved, so that the film resistivity is small, in the embodiment, the front second transparent conductive film 2 and the back second transparent conductive film 10 are sputtered by adjusting the sputtering deposition processThe jet pressure is between 0.5Pa and 0.7Pa, and the high sputtering rate is 5.0nm.min-1～5.5nm.min-1The concentration of the current carrier is improved, and the metal atoms and the oxygen atoms which are irradiated to the substrate under the air pressure are not fully reacted to form more oxygen vacancies, thereby realizing the improvement of the concentration of the current carrier.
To further verify the improved efficiency of the TCO tandem heterojunction solar structure of the present invention with respect to solar cells, electrical performance experiments were performed comparing the structure of the present invention with conventional HJT cells.
The preparation method of the HJT cell with the TCO laminated heterojunction solar structure comprises the following steps:
texturing an N-type crystal silicon substrate to form a pyramid textured surface, removing impurity ions and cleaning the surface;
(ii) preparing a front and back double intrinsic amorphous silicon layer and a doped amorphous silicon layer by plasma chemical vapor deposition, wherein the thickness of the front and back intrinsic amorphous silicon layer is 10 nm; the back side doped amorphous silicon film is made of P-type amorphous silicon and has the thickness of 15nm, and the front side doped amorphous silicon film is made of N-type amorphous silicon and has the thickness of 20 nm;
(iii) depositing an ITO film by magnetron sputtering, wherein the deposition parameters of the first layer of transparent conductive film on the front surface and the back surface are controlled as follows: oxygen flow (1.8 cm)3.min-1～2.2cm3.min-1) Sputtering pressure (0.3 Pa-0.5 Pa) and low sputtering rate (3.4 nm.min.)-1～5.0nm.min-1) The thickness is 40nm to 50 nm;
(iv) depositing an ITO film by magnetron sputtering, wherein the deposition parameters of the second layer of transparent conductive film on the front surface and the back surface are controlled as follows: oxygen flow (0.3 cm)3.min-1～0.7cm3.min-1) Sputtering pressure (0.5 Pa-0.7 Pa) and high sputtering rate (5.0nm. min.)-1～5.5nm.min-1) The thickness is 40nm to 50 nm;
(v) forming front and back silver metal electrodes by screen printing, wherein the width of the main grid is 1mm, the number of the main grids is 5, the width of the front and back silver auxiliary grid lines is 40 mu m, and the number of the lines is 100;
(vi) curing temperature 200 ℃.
(vii) the electrical performance of the cells was tested.
The conventional HJT cell is prepared as follows:
texturing an N-type crystal silicon substrate to form a pyramid textured surface, removing impurity ions and cleaning the surface;
(ii) preparing a front and back double intrinsic amorphous silicon layer and a doped amorphous silicon layer by plasma chemical vapor deposition, wherein the thickness of the front and back intrinsic amorphous silicon layer is 10 nm; the back side doped amorphous silicon film is made of P-type amorphous silicon and has the thickness of 15nm, and the front side doped amorphous silicon film is made of N-type amorphous silicon and has the thickness of 20 nm;
(iii) depositing an ITO film by magnetron sputtering, wherein the thickness of the ITO film on the front surface and the back surface is 100nm, and a mask design is formed by adopting a silicon wafer supported on a carrier plate, and the width of the mask is 1.5 mm;
(iv) forming front and back silver metal electrodes by screen printing, wherein the width of a main gate is 1mm, the number of the main gates is 5, the width of front and back silver auxiliary gate lines is 40 mu m, and the number of lines is 100;
(v) curing temperature 200 ℃.
(vi) testing the electrical properties of the cells.
The HJT batteries prepared by the two methods are subjected to performance tests, and the results are as follows:
| electrical Properties | ETA(％) | Isc(mA.cm-2) | FF(％) | Voc |
| Conventional HJT battery | 0 | 0 | 0 | 0 |
| Battery applying the application | 0.12 | 26 | 0.6 | 0 |
As can be seen from the above comparison, the HJT cell using the structure of the present invention has more excellent electrical properties.
The above embodiments are only for illustrating the utility model and are not to be construed as limiting the utility model, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model, therefore, all equivalent technical solutions also belong to the scope of the utility model, and the scope of the utility model is defined by the claims.
Claims (7)
1. The TCO laminated heterojunction solar structure comprises a substrate (6), and is characterized in that a front intrinsic amorphous silicon thin film (5), a front doped amorphous silicon thin film (4), a front first transparent conductive thin film (3), a front second transparent conductive thin film (2) and a front metal electrode (1) are sequentially arranged on the front of the substrate (6); the back surface of the substrate (6) is sequentially provided with a back surface intrinsic amorphous silicon film (7), a back surface doped amorphous silicon film (8), a back surface first layer transparent conductive film (9), a back surface second layer transparent conductive film (10) and a back surface metal electrode (11);
the thicknesses of the front first layer transparent conductive film (3), the front second layer transparent conductive film (2), the back first layer transparent conductive film (9) and the back second layer transparent conductive film (10) are equal;
the light transmittance of the front first layer transparent conductive film (3) is greater than that of the front second layer transparent conductive film (2), and the resistivity of the front first layer transparent conductive film (3) is less than that of the front second layer transparent conductive film (2);
the light transmittance of the first transparent conductive film (9) on the back surface is greater than that of the second transparent conductive film (10) on the back surface, and the resistivity of the first transparent conductive film (9) on the back surface is less than that of the second transparent conductive film (10) on the back surface;
the front first transparent conductive film 3 and the back first transparent conductive film 9 have the light transmittance of more than 85% by adjusting the oxygen flow to be 1.8cm3.min-1 to 2.2cm3.min-1 during the magnetron sputtering deposition;
the resistivity of the second layer of transparent conductive film is minimum by adjusting the oxygen flow to be 0.3cm3.min < -1 > -0.7 cm3.min < -1 > during the magnetron sputtering deposition of the front second layer of transparent conductive film 2 and the back second layer of transparent conductive film 10.
2. The TCO laminated heterojunction solar structure according to claim 1, wherein the front intrinsic amorphous silicon thin film (5) and the back intrinsic amorphous silicon thin film (7) are equal in thickness.
3. The TCO laminated heterojunction solar structure according to claim 1, wherein the front doped amorphous silicon thin film (4) has a thickness greater than the back doped amorphous silicon thin film (8).
4. The TCO laminated heterojunction solar structure according to claim 1, wherein the front intrinsic amorphous silicon thin film (5) and the back intrinsic amorphous silicon thin film (7) are grown on the surface of the substrate (6) by plasma chemical vapor deposition; the front doped amorphous silicon thin film (4) and the back doped amorphous silicon thin film (8) grow on the corresponding front intrinsic amorphous silicon thin film (5) or back intrinsic amorphous silicon thin film (7) through plasma chemical vapor deposition.
5. The TCO laminated heterojunction solar structure according to claim 1, wherein the front-side first transparent conductive film (3) is deposited on the front-side doped amorphous silicon thin film (4) surface by magnetron sputtering; the second transparent conductive film (2) on the front surface is deposited on the surface of the first transparent conductive film (3) on the front surface through magnetron sputtering; the first transparent conductive film (9) on the back is deposited on the surface of the doped amorphous silicon film (4) on the front through magnetron sputtering; and the second transparent conductive film (10) on the back is deposited on the surface of the first transparent conductive film (9) on the back through magnetron sputtering.
6. The TCO laminated heterojunction solar structure according to claim 1, wherein the substrate (6) is an N-type crystalline silicon substrate.
7. The TCO laminated heterojunction solar structure according to claim 1, wherein the front doped amorphous silicon thin film (4) is N-type amorphous silicon; the back-doped amorphous silicon thin film (8) is P-type amorphous silicon.
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