CN216699072U - Laser light source and light source array - Google Patents

Abstract

A laser light source comprises a first excitation cavity, the first excitation cavity comprises a first front end substrate arranged on an incident surface of the first excitation cavity, a first rear end substrate arranged on an emergent surface of the first excitation cavity, a first side excitation electrode arranged on the side surface of the first excitation cavity, the first side excitation electrode is for electrically exciting the first excitation cavity to generate first excitation light of at least one wavelength range, the incident surface and the emergent surface of the first excitation cavity are sequentially arranged along the emergent direction of the first excitation light, the side surface is used for connecting the incident surface and the emergent surface of the first excitation cavity, and the light source further comprises a first light combination film layer arranged on the first front end substrate and/or the first back end substrate, the light combination film layer is used for transmitting first exciting light and at least one light which is not overlapped with at least partial wavelength range of the first exciting light.

Description

Laser light source and light source array

Technical Field

The present invention relates to a light source, and more particularly, to a laser light source including a light-combining film.

Background

Compared with conventional light sources such as fluorescent lamps, LED light sources and the like, laser light sources have the advantages of good coherence, narrow spectrum, high luminous intensity and the like, and generally consist of semiconductor lasers. The semiconductor laser is a device which generates laser light by using a certain semiconductor material as a working substance, and the working principle is that the population inversion of unbalanced carriers is realized between the energy bands (conduction band and valence band) of the semiconductor substance or between the energy band of the semiconductor substance and the energy level of impurities (acceptor or donor), and when a large number of electrons in the population inversion state are compounded with holes, the stimulated emission effect is generated, and high-intensity exciting light can be generated.

In the field of light sources, a method of obtaining a multicolor light source by mixing light using light emitting elements of a plurality of colors is known. For example, in the conventional semiconductor laser multi-chip package MCP (multi-chip package) scheme, a multi-element laser array is used to mix colors to obtain white light, as shown in fig. 1, each laser array with a specific wavelength independently emits light, and the light passes through a light combining element in an optical path, such as a dichroic chip, to combine multiple wavelengths and output the white light. In the scheme, the spatial position of the light combining light path needs to be considered when the light source external optical system is designed, so that the finally formed white light point array is sparse, and the problems of complexity of the light source external optical system and the like are increased.

For example, in the conventional OLED light mixing scheme, a top-emission organic electroluminescent device (top emission OLED) doped with a blue dopant and a dual-emission organic electroluminescent device (dual emission OLED) doped with a red dopant and a green dopant are used to mix light, so that a voltage-modulated white light source is obtained. However, since the OLED light emitting device is a surface emitting light source, when the top-emitting organic electroluminescent device emits blue light and the double-sided organic electroluminescent device emits red and green light, the coupling efficiency is low; in addition, since the organic electroluminescent device controls the brightness by controlling the driving bias voltage coupled between the reflective electrode and the transmissive electrode or between the two transmissive electrodes, it is necessary to add a conductive layer and a feeding circuit on the light-emitting surface of the organic electroluminescent device, thereby increasing the complexity of the stacked layers of the light-emitting surface and affecting the shape and uniformity of the emergent light spot. Therefore, it is an objective of the present invention to develop a laser light source with high light combining efficiency, compact light source module and simplified external optical system.

Disclosure of Invention

The present invention provides a laser light source with high light-combining efficiency, a compact light source module integration mode, and a simplified external optical system.

In one aspect, the present invention provides a laser light source, which includes a first excitation cavity, the first excitation cavity including a first front substrate disposed on an incident surface of the first excitation cavity, a first rear substrate disposed on an exit surface of the first excitation cavity,

the first side surface excitation electrode is arranged on the side surface of the first excitation cavity and used for electrically exciting the first excitation cavity to generate first excitation light in at least one wavelength range, an incident surface and an emergent surface of the first excitation cavity are sequentially arranged along the emergent direction of the first excitation light, the side surface is used for being connected with the incident surface and the emergent surface of the first excitation cavity, the first side surface excitation electrode further comprises a first light combination film layer arranged on the first front-end substrate and/or the first rear-end substrate, and the light combination film layer is used for transmitting the first excitation light and at least one light which is not overlapped with at least part of the wavelength range of the first excitation light.

Through the arrangement, the laser light source can combine the excitation light generated by excitation and the light with at least partial non-overlapping wavelength ranges from the outside through the light combining film layer of at least one of the front end substrate or the rear end substrate for light output, the consistency of the light spot size is ensured, the use of additional light combining elements is avoided, the light rays with different wavelength ranges can be combined through the light combining film layer, and the light combining efficiency and the integration efficiency of the laser light source are improved.

Drawings

FIG. 1 is a schematic diagram of a multi-chip packaged light source of a conventional semiconductor laser;

FIG. 2 is a schematic diagram of a laser light source according to an embodiment of the invention;

FIG. 3 is a schematic perspective view of an excitation chamber according to an embodiment of the invention;

FIG. 4 is a schematic diagram illustrating the optical path of an excitation light generated by an excitation chamber according to an embodiment of the present invention;

FIG. 5 is a schematic view of a laser light source according to another embodiment of the present invention;

FIG. 6 is a schematic diagram of a laser light source according to yet another embodiment of the present invention;

FIG. 7 is a diagram illustrating reflection spectra of a first front-end light-combining film layer according to yet another embodiment of the invention;

FIG. 8 is a graph of the reflection spectrum of a second rear-end light-combining film layer according to yet another embodiment of the present invention;

FIG. 9 is a diagram illustrating reflection spectra of a third front-end light-combining film layer according to yet another embodiment of the invention;

FIG. 10 is a graph of the reflection spectrum of a third rear-end light-combining film layer according to yet another embodiment of the present invention;

fig. 11 is a schematic perspective view of a white light source array according to the present invention.

Description of the symbols of the drawings:

multi-chip package light source 10

Dichroic mirrors 11, 12, 13

Laser light source 200

First excitation chamber 201

Second excitation chamber 202

Third excitation chamber 203

First light-combining film layer 210

First front light-combining film layer 211

First rear light-combining film layer 212

Second light-combining film layer 220

Second front light-combining film layer 221

Second rear light-combining film layer 222

Third light-combined film layer 230

Third front light-combining film layer 231

The third rear light-combining film layer 232

First side excitation electrode 2013

First front end substrate 2011

First rear end plate 2012

Light source array 300

Detailed Description

Fig. 1 is a schematic diagram of a light source of a conventional semiconductor laser multi-chip package. Referring to fig. 1, in the light source packaging scheme, a plurality of laser arrays are used for combining light, for example, a red laser array R, a green laser array G, and a blue laser array B in fig. 1, laser arrays of three different color lights emit light independently, and wavelength combining is performed through a dichroic mirror in a light path, for example, a dichroic mirror 11 reflects red laser, so that red laser emitted from the red laser array changes the light path and enters a light combining light path, a dichroic mirror 12 transmits red laser and reflects green laser emitted from the green laser array, and a dichroic mirror 13 transmits red laser and green laser and reflects blue laser emitted from the blue laser array, and finally, mixed white light output by combining light with three wavelengths is obtained. In the scheme, because the wavelengths of the laser lights emitted by the laser arrays are different, the angles of the laser lights entering the light combination element are deviated, and the sizes of light spots emitted by the light combination elements in the light combination light path are easily different, so that the problem of uneven color possibly exists in the light combination light beam emitted finally, and because the spatial position of the light combination light path needs to be considered when the light source external optical system is designed, the white light point array formed finally is sparse, and the problems of complexity and the like of the light source external optical system are increased.

Therefore, it is an urgent need to solve the above-mentioned problems to design a laser light source with high light combining efficiency and compact space.

The present application provides a laser light source to solve at least some of the above problems. Referring to fig. 2 to 4, fig. 2 is a schematic view of a laser light source according to an embodiment of the invention. Referring to fig. 2, the laser light source 200 of the present embodiment includes a first excitation cavity 201, and the first excitation cavity 201 includes a first front end substrate 2011 and a first rear end substrate 2012 which are oppositely disposed.

The first excitation cavity 201 may be a resonant cavity that generates monochromatic laser light under external excitation, such as excitation by electrical injection, electron beam excitation, or optical pumping, using a semiconductor material, such as gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS), or the like, as a working substance. The first excitation cavity 201 is not limited to this, and may be a resonant cavity capable of generating monochromatic excitation light under external excitation.

Referring to fig. 3, as shown in fig. 3, fig. 3 is a schematic perspective view of the first excitation cavity 201 in this embodiment, the first excitation cavity 201 further includes a first lateral excitation electrode 2013, and the first lateral excitation electrode 2013 is disposed on a lateral surface of the first excitation cavity 201 and is used for electrically exciting the first excitation cavity to generate first excitation light with at least one wavelength range. The side faces are used for connecting the incident face and the emergent face of the first excitation cavity.

In this embodiment, the laser light source is excited by electrical injection to generate excitation light, and the first side excitation electrode 2013 is connected to the substrate circuit through the side position of the first excitation cavity, so that the first excitation cavity 201 generates first excitation light under side electrical excitation, and the first excitation light is emitted from the first front end substrate 2011 or the first rear end substrate 2012, which is different from the side surface of the excitation cavity.

It is understood that, in this embodiment, with reference to the light propagation direction of the excitation light L1 generated by the excitation of the first excitation cavity 201 itself, the incident surface and the exit surface of the first excitation cavity are oppositely disposed, and the first front end substrate 2011 and the first back end substrate 2012 can be disposed on the incident surface and the exit surface of the first excitation cavity 201, respectively. In other embodiments, the exit surface and the entrance surface of the first excitation light may be disposed on the first front end substrate 2011 or the first back end substrate 2012.

With continued reference to fig. 2 and 4, fig. 4 is a schematic optical path diagram of the first excitation light L1 generated by the first excitation cavity 201. The first excitation cavity 201 further includes a first light combining film 210, and the first light combining film 210 is capable of transmitting at least one light L2 that does not overlap with at least a part of the wavelength range of the first excitation light generated by the first excitation cavity 201, that is, the excitation light L1 generated by the first excitation cavity 201 and the externally incident light L2 are combined.

The first light combining film layer may be disposed on the first front substrate 2011 or the first back substrate 2012 of the first excitation cavity 201, or disposed on both the first front substrate 2011 and the first back substrate 2012. In this embodiment, the first light combining film layer 210 is disposed on the first front substrate 2011 or the first back substrate 2012 of the first excitation cavity 201.

It should be noted that the externally incident light L2 may be any light beam incident on the first front end substrate 2011 of the first excitation cavity 201, and the wavelength range of the light beam is at least partially non-overlapping with that of the light beam L1. The arrows in fig. 4 indicate only the beam propagation direction of L1 or L2, and do not represent the spot position or size of the beam cross-section. The type of L2 light beam may be a laser, a focused fluorescent light, or an incandescent light.

Optionally, L2 is a laser with a spot size equal to the spot size of the first excitation light L1 generated by the excitation cavity 201, but with at least partially non-overlapping wavelength ranges. Optionally, the first excitation light L1 is a blue laser, the L2 is a yellow fluorescence compressed by the focusing lens, and the L2 enters the first excitation cavity, combines with the first excitation light L1, and exits from the first back end substrate.

Optionally, the first excitation cavity 201 may be configured to generate red excitation light with a wavelength range of 680 to 650nm, and the L2 may be red laser with a wavelength range of 750 to 720nm, and the combined light is emitted as broadband red laser light.

Specifically, the first light combining film layer 210 includes a first front light combining film layer 211 and a first back light combining film layer 212. The first front end light combining film layer 211 is disposed on the first front end substrate 2011 of the first excitation cavity 201. The first front light combining film layer 211 can combine wavelengths of L1 and L2, and specifically, the first front light combining film layer 211 transmits red laser light L2 with a wavelength range of 750 to 720nm and reflects red excitation light L1 with a wavelength range of 680 to 650nm generated by the excitation cavity. The first rear light combining film 212 is disposed on the first rear substrate 2011 of the first excitation cavity 201, and is capable of highly reflecting the red excitation light L1 with a wavelength range of 680 to 650nm and transmitting the red laser light L2 with a wavelength range of 750 to 720nm, that is, the red excitation light L1 and the red laser light L2 are combined at the second light combining film with a wavelength and emitted.

In this embodiment, the first light combination film layer 210 may include a film layer having anti-reflection or anti-reflection effect for a specific wavelength range, and the film layer material having anti-reflection or anti-reflection effect for a specific wavelength range may be made of metal, silicon oxide, or metal oxide, such as silicide (SiNx, SiC, SiO2) doped with different dopants, alone or in any combination. The first front end light combining film layer 211 and the first rear end light combining film layer 212 are formed by stacking an antireflection film in a wavelength range corresponding to an external light beam L2 and an antireflection film in a wavelength range corresponding to an excitation light L1, and the material or the number of the antireflection film of the first excitation light L1 on the first rear end light combining film layer 212 is different from that of the first front end light combining film layer 211, so that the first excitation light L1 continuously accumulates photon numbers in the first excitation cavity 201, and can combine with the external light beam L2 and emit from the first rear end substrate 2012 only after reaching a certain intensity.

In addition, in other embodiments where the first light combination film layer is only disposed on the first front substrate or the first rear substrate, a total reflection film layer may be disposed on the substrate at the end where the first light combination film layer is not disposed, and the total reflection film layer may be a stack of metal layers, such as a stack of silver layers, and the first excitation light L1 and the external light beam L2 are combined and then emitted from the first front substrate or the first rear substrate where the first light combination film layer is disposed.

Therefore, the laser light source 200 can combine the wavelengths of the first excitation light L1 generated by excitation of the first excitation cavity 201 and the light beam L2 from the outside of the first excitation cavity 201, and then transmit and output the combined light from the first back end board 2011 or the first front end board 2012, so that the combined light with the expanded wavelength range is obtained, the consistency of the light spot size is ensured, the use of an additional light combining element is avoided, the light combining efficiency of the laser light source is improved, and the integration mode of the light source module is optimized.

It is understood that in the above embodiments, the first excitation cavity 201 may emit a combined light including the first excitation light 2 and the light of the same color from the outside of the first excitation cavity with the same spot size but at least partially non-overlapping wavelength ranges, may be a combined light of different colors with the same spot size but at least partially non-overlapping wavelength ranges from the outside of the first excitation cavity, or may only include the first excitation light.

In another embodiment, as shown in fig. 5, fig. 5 is a schematic view of a laser light source according to another embodiment of the present invention. The laser light source 200 may comprise a first excitation cavity 201 and a second excitation cavity 202. In the case that the light emitted from the first excitation cavity 201 only includes the first color, the second excitation cavity 202 is used for exciting the second excitation light which generates the second color, and the wavelength range of the second excitation light does not overlap with the wavelength range of the light emitted from the first excitation cavity 201.

In an air medium, in order to inject the excitation light generated by one excitation cavity into the front end substrate of another excitation cavity, the gap between the emergent surface of the previous excitation cavity and the incident surface of the next excitation cavity needs to be set to be larger than half of the central wavelength of the excitation light generated by the previous excitation cavity, so as to overcome the diffraction limit.

In this embodiment, the arrangement of the front and rear end substrates and the side excitation electrodes of the second excitation cavity 202 is similar to that of the first excitation cavity 201, and the second excitation cavity 202 includes a second front end substrate and a second rear end substrate (not shown). Except that the second excitation cavity 202 is provided with a second light combining film layer, which includes a second front light combining film layer 221 and a second back light combining film layer 222. The second front light combining film 221 is used for transmitting the first excitation light and reflecting the second excitation light, and the second back light combining film 222 is used for highly reflecting the second excitation light and transmitting the first excitation light. It should be emphasized that the second back end light combining film layer 222 is configured to enable the second excitation light to be highly reflected when the second excitation light reaches a certain intensity, and transmit the first excitation light and the second excitation light combined from the second back end light combining film layer 222.

Specifically, in this embodiment, the first excitation light emitted from the first excitation cavity 201 is red light, the second excitation light is green light, and the second rear-end light combining film 222 transmits and outputs the red light and the green light of the high-reflectivity light, so as to obtain yellow light L3 with consistent spot size. It is to be understood that the color of the first excitation light emitted from the first excitation cavity 201 is not limited to red, but may also be green, blue or other colors, and the second excitation light may also be red, blue or other colors of excitation light, and may be specifically set as required.

From this, laser source 200 can carry out the light of the different colours of first excitation cavity outgoing with the second exciting light that produces from the second excitation cavity and carry out the wavelength and close the back from second rear end base plate output, thereby obtain the light that closes that has the third colour, the uniformity of facula size has both been guaranteed, avoid using extra light component that closes again, the efficiency of the light that closes who has improved laser source and the integrated efficiency of light source module, because the light source array of linear arrangement has been formed between the different excitation cavities, be favorable to the compact setting of whole light source module, simplify external optical system's design.

In a further embodiment as shown in fig. 6, on the basis of the above embodiment, the laser light source 200 may further include a third excitation cavity 203, the third excitation cavity 203 includes a third front substrate, a third back substrate and a third light-combining film layer 230, and the third light-combining film layer 230 includes a third front light-combining film layer 231 and a third back light-combining film layer 232. The third front end light combining film 231 is disposed on the third front end substrate, and the third rear end light combining film 232 is disposed on the third rear end substrate, and is configured to transmit the first excitation light and the second excitation light and emit the third excitation light, the first excitation light and the second excitation light in the same direction after light combination.

In this embodiment, the colors of the excitation lights excited and generated by the first excitation cavity 201, the second excitation cavity 202 and the third excitation cavity 203 are not limited, and the wavelength ranges do not completely overlap with each other. For example, to obtain a laser light source with white light L4 with high color purity, in this embodiment, the excitation light colors generated by the first excitation cavity 201, the second excitation cavity 202, and the third excitation cavity 203 may be red, green, and blue, respectively, and the center frequencies are 638nm, 525nm, and 455nm, respectively.

Specifically, in the present embodiment, when the light combining film layer is composed of a silicon oxide film system and a titanium oxide film system, how to perform narrow-band design on the light combining film layers of the second excitation cavity 202 and the third excitation cavity 203 is discussed and specifically described.

More specifically, the light-combining film layer of the present embodiment is formed by stacking a silicon dioxide film layer and a titanium pentoxide film layer. In order to realize high reflection of green excitation light and high transmission of red excitation light in the first front end light combining film 2011 on the second front end substrate of the second excitation cavity 202, the reflectivity of the green excitation light is selected to be greater than 98%, the reflectivity of the red excitation light is selected to be less than 5%, and the number of layers and the thickness of the silicon dioxide film layer and the titanium pentoxide film layer in the first front end light combining film are optimized. It should be noted that in this embodiment, the number of film layers and the thickness of the film layer are optimized under the condition that the silicon dioxide film layer and the titanium pentoxide film layer are selected for design, and in other embodiments, the film layer may be designed to meet the transflective requirement by doping other media or by using a material film layer of any combination of metal, nonmetal, metal oxide or nonmetal oxide.

Please refer to fig. 1 for the parameter setting of the first front end light combining film layer of the second excitation cavity 202. At this time, the reflection spectra of the red excitation light and the green excitation light at the first front end light combination film layer 211 are as shown in fig. 7, specifically, the reflectance of the red excitation light is close to 0, and the reflectance of the green excitation light is close to 100%. That is, at this time, the first front-end light-combining film layer 211 transmits most of the red excitation light and reflects most of the green excitation light.

Chart 1

Similarly, in order to realize high back emission of green excitation light and high transmission of red excitation light for the second light combination film layer 221 on the rear end substrate of the second excitation cavity 202, the reflectance of the green excitation light is selected to be greater than 80%, and the reflectance of the red excitation light is selected to be less than 5%, the number of layers and the thickness of the silicon dioxide film layer and the titanium pentoxide film layer in the second rear end light combination film layer are optimized, and the optimized parameters are shown in table 2. The reflection spectra of the red excitation light and the green excitation light at the second rear-end light-combining film layer are shown in fig. 8, and the second rear-end light-combining film layer 222 transmits most of the red excitation light (98%) and some of the green excitation light (18%).

Chart 2

In order to realize high transmission of green excitation light and red excitation light and high reflection of blue excitation light generated by excitation of the third excitation cavity per se by the third front end light combining film layer 231 on the third front end substrate of the third excitation cavity 203, the reflectivity of the blue excitation light is selected to be larger than 98%, and the reflectivity of the red excitation light and the green excitation light is selected to be smaller than 5%, and the number of layers and the thickness of the silicon dioxide film layer and the titanium pentoxide film layer in the third front end light combining film layer 231 are optimized. The parameters resulting from the optimization are shown in table 3. At this time, the reflection spectrums of the blue excitation light, the red excitation light and the green excitation light at the third front end light combining film layer 231 are as shown in fig. 9, the third front end light combining film layer 231 transmits most of the red excitation light (about 100%) and the green excitation light (about 100%), and reflects most of the blue excitation light (98%).

Chart 3

In order to realize high transmission of green excitation light and red excitation light and high reflection of blue excitation light generated by excitation of the third excitation cavity per se by the third rear end light combining film layer 232 on the third rear end substrate of the third excitation cavity 203, the reflectivity of the blue excitation light is selected to be greater than 85%, and the reflectivity of the red excitation light and the green excitation light is selected to be less than 5%. The number of layers and the thickness of the silicon dioxide film layer and the titanium pentoxide film layer in the third rear-end light-combining film layer 232 are optimized, and the parameters obtained by the optimization are shown in a table 4. At this time, the reflection spectrums of the blue excitation light, the red excitation light and the green excitation light at the third back end light combining film layer 232 are as shown in fig. 10, and at this time, most of the red excitation light and the green excitation light are transmitted by the third back end light combining film layer 232, and part of the blue excitation light (about 14%).

Chart 4

It should be noted that the reflectivity in fig. 7 to fig. 10 is a relative value, for example, it is assumed that the energy of the green excitation light generated by the second excitation cavity on the side of the second light combining film layer inside the second excitation cavity is 100%, and the energy of the light transmitted out of the second back light combining film layer outside the second excitation cavity is 20% of the above ratio.

It is understood that the selection of the film type and the film parameters in this embodiment is only for exemplary analysis and not by way of limitation, and the number of the film layers may be optimized to be smaller or thinner when the material of the film layer is other oxide or other dielectric film layers.

Fig. 11 is a schematic perspective view of the white light source array obtained in this embodiment. Each white light source in the white light source array comprises a red laser light source, a green laser light source and a blue laser light source. The red laser light source and the green laser light source are arranged adjacently, and the green laser light source and the blue laser light source are arranged adjacently. The white light sources in the array are linearly arranged, exciting light generated by each white light source can be directly combined to form white light to be emitted, the consistency of the size of light spots is kept, and an additional light combining element is not needed; carry out wavelength through red exciting light, green exciting light to blue exciting light's order and close the light, avoid preorder to pour into the exciting light and produce the spectrum influence to the sequent work material that arouses, through the linear setting of this kind of light source array sequence for the light source module keeps minimum narrowness, is convenient for simplify external optical system's design.

It can be understood that the white light source array may be arranged in other forms according to actual requirements, such as two-dimensional arrangement, that is, a plurality of white light sources are adjacently arranged along the respective side surfaces, so that the light source array emits dense white light beams, which is beneficial to obtaining uniform light spots with large expansion after shaping after downstream optical path lens combination.

The foregoing embodiments may be combined or disassembled without conflict, and the embodiments and drawings are only used as examples to illustrate and not to limit the present invention, and those skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention, so that the scope of the present invention is defined by the appended claims.

Claims (14)

1. A laser light source comprising:

a first excitation cavity is arranged in the first excitation cavity,

the first excitation chamber comprises a first excitation chamber body,

the first front end substrate is arranged on an incident surface of the first excitation cavity;

the first rear end base plate is arranged on the emergent surface of the first excitation cavity;

the first side excitation electrode is arranged on the side surface of the first excitation cavity and used for electrically exciting the first excitation cavity to generate first excitation light in at least one wavelength range;

the incident surface and the emergent surface of the first excitation cavity are sequentially arranged along the emergent direction of the first excitation light, and the side surfaces are used for connecting the incident surface and the emergent surface of the first excitation cavity;

the first light combination film layer is arranged on the first front end substrate and/or the first rear end substrate and is used for transmitting first exciting light and at least one light which is not overlapped with at least part of wavelength ranges of the first exciting light.

2. The laser light source of claim 1,

the laser light source comprises a second excitation cavity which is arranged at the downstream of the emergent direction of the first excitation light and comprises a first excitation cavity body,

the second front end substrate is arranged on the incident surface of the second excitation cavity;

the second rear end substrate is arranged on the emergent surface of the second excitation cavity;

a second side excitation electrode arranged on the side of the second excitation cavity and used for electrically exciting the second excitation cavity to generate second excitation light, wherein the wavelength range of the second excitation light is at least partially non-overlapped with that of the first excitation light,

the incident surface and the emergent surface of the second excitation cavity are sequentially arranged along the emergent direction of the second excitation light, and the side surfaces are used for connecting the incident surface and the emergent surface of the second excitation cavity;

and the second light combination film layer is arranged on the second front end substrate and the second rear end substrate and is used for transmitting at least one light which is not overlapped with at least part of wavelength ranges of the second exciting light.

3. The laser light source of claim 2,

the laser light source also comprises a third excitation cavity, the third excitation cavity is arranged at the downstream of the exit direction of the second excitation light, the third excitation cavity comprises,

the third front end substrate is arranged on the incident surface of the third excitation cavity;

the third rear end base plate is arranged on the emergent surface of the third excitation cavity;

a third lateral excitation electrode disposed at a lateral side of the third excitation cavity for electrically exciting the third excitation cavity to generate third excitation light at least partially non-overlapping with the first excitation light and the second excitation light respectively,

the incident surface and the emergent surface of the third excitation cavity are sequentially arranged along the emergent direction of the third excitation light, and the side surfaces are used for connecting the incident surface and the emergent surface of the third excitation cavity;

and the third light combination film layer is arranged on the third front end substrate and the third rear end substrate and is used for transmitting at least two lights which are not overlapped with at least part of wavelength ranges of the third exciting lights and combining the third exciting lights and the at least two lights which are not overlapped with at least part of wavelength ranges of the third exciting lights and then emitting the combined lights along the same direction.

4. The laser light source of claim 1,

the first light combination film layer comprises a first front light combination film layer and a first back light combination film layer,

the first front end light combining film layer is arranged on the first front end substrate and is used for transmitting at least one light which is not overlapped with at least part of wavelength range of the first exciting light and reflecting the first exciting light,

and/or the presence of a gas in the atmosphere,

the first rear light combining film layer is arranged on the first rear substrate and used for transmitting the first exciting light and at least one light which is not overlapped with at least part of wavelength ranges of the first exciting light.

5. The laser light source of claim 2,

the second light combining film layer comprises a second front light combining film layer and a second back light combining film layer,

the second front end light combining film layer is arranged on the second front end substrate and is used for transmitting at least one light which is not overlapped with at least part of wavelength range of the second exciting light and reflecting the second exciting light,

the second rear light-combining film layer is arranged on the second rear substrate and is used for transmitting the second exciting light and at least one light which is not overlapped with at least part of wavelength ranges of the second exciting light.

6. The laser light source of claim 3,

the third light combination film layer comprises a third front light combination film layer and a third rear light combination film layer,

the third front end light combining film layer is arranged on the third front end substrate and is used for transmitting at least one light which is not overlapped with at least part of wavelength range of the third exciting light and reflecting the third exciting light,

the third rear end light combining film layer is arranged on the third rear end substrate and is used for transmitting the third exciting light and at least two lights which are not overlapped with at least part of wavelength ranges of the third exciting light.

7. The laser light source of claim 3,

the first light combination film layer, the second light combination film layer and the third light combination film layer have wavelength selectivity.

8. The laser light source of claim 6,

the first excitation light, the second excitation light, and the third excitation light are any one of three primary colors.

9. The laser light source of claim 8,

the colors of the first excitation light, the second excitation light and the third excitation light are red, green and blue, respectively.

10. The laser light source of claim 7,

the first light combination film layer, the second light combination film layer and the third light combination film layer respectively comprise silicide and metal oxide.

11. The laser light source of claim 3,

the first excitation cavity, the second excitation cavity and the third excitation cavity are adjacently arranged in sequence along the emergent direction of the first excitation light, air gaps are arranged between every two first excitation cavity, the second excitation cavity and the third excitation cavity, and the width of each air gap is at least half of the central wavelength of the preceding excitation light.

12. The laser light source of claim 10,

the first light combination film layer, the second light combination film layer and the third light combination film layer are formed by stacking a silicon dioxide film layer and a titanium pentoxide film layer respectively.

13. The laser light source of claim 12,

the thickness range of the silicon dioxide film layer is 5nm to 300nm, and the thickness range of the titanium pentoxide film layer is 25nm to 150 nm.

14. A light source array comprising a plurality of white light sources,

each of the white light sources is the laser light source of any one of claims 3-13, the plurality of white light sources being adjacently disposed along the respective side surfaces such that the array of light sources emits a dense beam of white light.

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