CN216670106U - Power switch overcurrent detection circuit and current detection circuit - Google Patents

Power switch overcurrent detection circuit and current detection circuit Download PDF

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Publication number
CN216670106U
CN216670106U CN202123140183.1U CN202123140183U CN216670106U CN 216670106 U CN216670106 U CN 216670106U CN 202123140183 U CN202123140183 U CN 202123140183U CN 216670106 U CN216670106 U CN 216670106U
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switch
power switch
input
output
comparator
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王春华
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Nanjing Qinheng Microelectronics Co ltd
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Nanjing Qinheng Microelectronics Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

The utility model discloses a power switch overcurrent detection circuit and a current detection circuit, wherein the overcurrent detection circuit comprises a power switch, a mirror switch, a reference current source, a high-end comparator and a state machine or a microcontroller, the power switch and the mirror switch are both NMOS, the input end and the drive end of the mirror switch are respectively connected with the input end and the drive end of the power switch, the output end of the mirror switch is connected with the reference current source and the first input end of the high-end comparator, the output end of the power switch is connected with the second input end of the high-end comparator, the output end of the high-end comparator is connected with the state machine or the microcontroller, and the output end of the state machine or the microcontroller is connected with the reference current source. The utility model has no external precise resistor, can greatly reduce the heat loss, and has the advantages of extremely simple circuit, short signal link, small accumulated mismatch, small final error and low cost.

Description

Power switch overcurrent detection circuit and current detection circuit
Technical Field
The utility model belongs to the technical field of current detection, and particularly relates to a power switch overcurrent detection circuit and a current detection circuit.
Background
The power tube is difficult to avoid a large-current scene in the power supply process, and if the output is short to the ground by mistake, overcurrent protection is needed. For another example, the current supply device needs to detect the magnitude of the load current in real time, which needs to perform current detection. Therefore, in real life, current detection technology is indispensable.
In the first prior art, as shown in fig. 1, a precision resistor is connected in series at an output end of a power tube, an output current flows through the resistor to generate a voltage drop, and the voltage drop is amplified and then is sampled and converted into data by an ADC for output. The disadvantage is that the current flowing through the output resistor generates heat loss, and the loss is larger when the output current is larger. Secondly, in order to reduce heat loss, the resistance of the resistor is small, so that the voltage drop generated at two ends of the resistor is also small, and therefore the error of current detection is large.
In the second prior art, as shown in fig. 2, a current mirror conversion circuit mirrors a current of a power tube to a resistor to realize conversion from an output current to a voltage, and then the current mirror conversion circuit amplifies the output current and performs ADC sampling and converts the amplified output current into data for output. The disadvantage is that the mirror circuit is complex in structure to make the current mirror more accurate. Secondly, the conversion to voltage and then to ADC conversion are required, the signal link is long, and the ADC increases the cost.
Disclosure of Invention
The purpose of the utility model is as follows: the utility model provides a power switch overcurrent detection circuit and a current detection circuit, aiming at solving the problem that the current detection of a power switch in the prior art has large loss and large cost.
The technical scheme is as follows: the utility model provides a power switch current detection circuit, including power switch, the image switch, the reference current source, high-end comparator and state machine, the input and the drive end of image switch are connected with power switch's input and drive end respectively, the first input of reference current source and high-end comparator is connected to the output of image switch, the second input of high-end comparator is connected to power switch's output, the state machine is connected to high-end comparator's output, the reference current source is connected to the output of state machine, power switch and image switch are NMOS, power switch is the drain terminal with the input of image switch, power switch is the source terminal with the output of image switch, power switch is the grid end with the drive end of image switch.
Further, the power switch and the grid end of the mirror image switch are connected with a charge pump booster circuit which can be closed.
The state machine further comprises an input polarity change-over switch, a source end of the mirror image switch and a source end of the power switch are connected with a first input end and a second input end of the high-end comparator through the input polarity change-over switch, and the state machine is further connected with the input polarity change-over switch.
Further, the reference current source is a numerical control reference current source.
And further, the system also comprises a level converter, wherein the input end of the level converter is connected with the output end of the high-end comparator, and the output end of the level converter is connected with the input end of the state machine.
The utility model provides a power switch current detection circuit, including power switch, the mirror image switch, reference current source, high-end comparator and microcontroller, the input and the drive end of mirror image switch are connected with power switch's input and drive end respectively, the first input of reference current source and high-end comparator is connected to the output of mirror image switch, the second input of high-end comparator is connected to power switch's output, microcontroller is connected to high-end comparator's output, reference current source is connected to microcontroller's output, power switch and mirror image switch are NMOS, power switch is the drain terminal with the input of mirror image switch, power switch and mirror image switch's output are the source terminal, power switch is the grid end with the drive end of mirror image switch.
Furthermore, the grid end of the power switch and the grid end of the mirror switch are connected with a charge pump booster circuit which can be closed.
The microcontroller is connected with the input polarity change-over switch.
The utility model provides a power switch overcurrent detection circuit, including power switch, the mirror image switch, reference current source and high-end comparator, the input and the drive end of mirror image switch are connected with power switch's input and drive end respectively, the first input of reference current source and high-end comparator is connected to the output of mirror image switch, the second input of high-end comparator is connected to power switch's output, the output of high-end comparator outputs and overflows the detection result, power switch and mirror image switch are NMOS, power switch and mirror image switch's input are the drain terminal, power switch and mirror image switch's output are the source terminal, power switch and mirror image switch's drive end are the grid end.
Further, the circuit also comprises a level converter, wherein the input end of the level converter is connected with the output end of the high-end comparator.
Has the advantages that: compared with the prior art in which resistors are connected in series at the output end, the power switch overcurrent detection circuit and the current detection circuit have no external precise resistor and can greatly reduce heat loss; the circuit is extremely simple. Compared with the prior art, the method for obtaining the detection result through the conversion of the current mirror image into the voltage and the ADC conversion after amplification does not need a complex current mirror image circuit such as an operational amplifier for clamping, and the like, and directly uses a comparator for comparison, so that the signal link is short, the accumulated mismatch is small, and the final error is small; an ADC is not needed, and the ADC is directly converted into a digital signal by a state machine or a microcontroller to be output, so that the cost is greatly reduced. A current detection circuit of a state machine or a microcontroller is added, so that the current value output by the power switch can be detected, and the error is small; for the over-current detection circuit of the stateless machine, the magnitude of the reference current can be set according to needs, whether the output current of the power switch exceeds the preset maximum output current threshold value or not is accurately judged, and the over-current detection circuit is simple in circuit, accurate in result and low in cost. Especially for the occasion that the power supply voltage is high voltage, the circuit is a high-voltage device except the mirror switch and the high-end comparator, and the rest are low-voltage devices, so that the total cost is lower when the number of the high-voltage devices is less.
Drawings
FIG. 1 is a schematic block diagram of a prior art current sensing circuit for a power switch;
FIG. 2 is a schematic block diagram of a current sensing circuit of a prior art two power switch;
FIG. 3 is a schematic block diagram of a current sense circuit of a power switch according to an embodiment;
FIG. 4 is a schematic block diagram of an over-current detection circuit of a second power switch according to an embodiment;
FIG. 5 is a schematic block diagram of a current detection circuit using a microcontroller according to a third embodiment;
FIG. 6 is a schematic block diagram of a current detection circuit with an input polarity switch according to a fourth embodiment;
FIG. 7 is a high side comparator with input error;
fig. 8 is a schematic block diagram of a current sense circuit with input error for a high-side comparator.
Detailed Description
The utility model is further explained below with reference to the figures and the specific embodiments.
The first embodiment is as follows:
a power switch current detection circuit is disclosed in figure 3, which comprises a power switch, a mirror switch, a reference current source, a high-end (power end) comparator, a level shifter and a state machine, wherein the input end and the drive end of the mirror switch are respectively connected with the input end and the drive end of the power switch, the output end of the mirror switch is connected with the reference current source and the first input end of the high-end comparator, the output end of the power switch is connected with the second input end of the high-end comparator, the output end of the high-end comparator is connected with the state machine through the level shifter, and the state machine is used for controlling the reference current and outputting a current detection result according to an output signal of the level shifter. Wherein the level shifter is an unnecessary device if the power supply voltage V is inputINEqual to the state machine supply voltage, e.g. VINIf the state machine supply voltage is also 5V at 5V, then no level shifter is needed. The level shifter is used for converting the level of a high-voltage power supply end output by the high-end comparator into the level of a low-voltage kernel which can be directly received by the state machine.
The mirror switch and the power switch are NMOS tubes, the input ends of the mirror switch and the power switch are drain electrodes, and the mirror switch and the power switch are connected with a power supply VIN(ii) a The output end is a source electrode and is connected with a high-end comparator;the driving end is a grid and is connected with a charge pump booster circuit which can be closed.
The high-end comparator is a comparator applied to the positive power end, and compares signals of the positive power end, and the comparison is generally 5V or more than 5V.
The present embodiment uses NMOS as the power transistor. The NMOS power tube has smaller on-resistance, smaller total W/L value under the same load current condition, smaller W/L area and lower cost. The grid voltage of the power tube must be V when the power tube is conductedOUT+VTH，VOUTClose to the supply voltage VINThe grid voltage of the power tube needs to be higher than the power supply voltage VINHigher, a booster circuit must be used. When the power tube is closed, the grid voltage is 0V, so that the booster circuit is required to have a closing function, 0V is output, and power consumption is saved. Therefore, the present embodiment uses the turn-off charge pump voltage-boosting circuit to drive the gate of the power transistor.
The power switch is matched with the mirror image switch, and the ratio of the width-length ratio of the power switch to the width-length ratio of the mirror image switch is N: 1, namely the mirror ratio is N: 1. the output current of the power switch is IOUTGenerating a fixed voltage | VDSPOWERL. The output current of the mirror switch is IMIRR＝IREFGenerating a voltage | VDSMIRRL. When I isMIRR＞IOUTIn, | VDS in/NMIRR|＞|VDSPOWERI, the comparator compares the two voltages, the comparator result indicating IMIRRIs larger. When IMIRR＜IOUTIn, | VDS in/NMIRR|＜|VDSPOWERI, the comparator compares the two voltages, the comparator result indicating IMIRRIs small. The reference current source is controlled by a state machine composed of digital circuits and generates a numerical control current IREF. The state machine adjusts I according to the indication signal of the comparatorREFIs continuously iterated to make IREFIs constantly close to IOUTand/N. The closest I can be obtained by an algorithm in a state machineOUTReference current value 1 of/NREF，VALTo thereby obtain an output current value of 1REF，VAL×N。
The reference current source is a numerical control reference current source, and the state machine controls the reference current through outputting control words. In this embodiment, the state machine may adjust the reference current by a bisection method, or may adjust the reference current by a sequence from large to small or from small to large, compare the reference current with the voltage generated by the output current, and iterate continuously until a reference current value closest to the mirror image output current is found, and multiply the reference current value by the mirror image proportion to obtain the value of the output current.
Example two:
a power switch over-current detection circuit is shown in figure 4 and comprises a power switch, a mirror switch, a reference current source and a high-end comparator, wherein the input end and the driving end of the mirror switch are respectively connected with the input end and the driving end of the power switch, the output end of the mirror switch is connected with the reference current source and the first input end of the high-end comparator, the output end of the power switch is connected with the second input end of the high-end comparator, and the output end of the high-end comparator outputs an over-current detection result.
When the overcurrent detection result needs to be transmitted to the kernel, the overcurrent detection circuit further comprises a level converter, the input end of the level converter is connected with the output end of the high-end comparator, and the level converter is used for converting the level of a high-voltage power supply end output by the high-end comparator into the level of a low-voltage kernel which can be directly received by the kernel, so that the subsequent work is facilitated.
The mirror switch and the power switch are NMOS tubes, and the input ends of the mirror switch and the power switch are drain electrodes connected with a power supply VIN(ii) a The output end is a source electrode and is connected with a high-end comparator; the driving end is a grid and can be connected with a charge pump booster circuit which can be closed.
In order to conveniently configure the overcurrent point, the reference current source can be a numerical control reference current source, and the desired overcurrent point can be configured or changed according to needs.
Current I of mirror switchMIRROutput to a reference current source 1REFThis makes IMIRR＝IREF。
Is set as IREFThen, IMIRRThat is, it is determined that the voltage | VDS is generated on the mirror tubeMIRRI, the I VDSMIRRAnd | is used as the input reference voltage of the high-end comparator.
The power tube is equivalent to a resistor when outputting current, 1OUTLarger, power tube | VDSPOWERThe larger the | is. When I isOUT＞N×IREFWhen, result in | VDSPOWER|＞|VDSMIRRAnd the comparator outputs an overcurrent indicating signal at the moment.
Let VDD be the power supply voltage, since the input signal of the comparator is VDD-I VDSMIRRI or VDD-I VDSPOWERAlmost close to the supply voltage, so the comparator requires the use of a high-side (power supply side) comparator.
In summary, the current detection circuit can be used in IOUT＞N×IREFTime-out indication signal, setting IREFThe maximum output current value I can be setOUT，max。
Example three:
in contrast to the first embodiment, the third embodiment does not use a state machine but uses a microcontroller, such as a single chip, to adjust the reference current source. Compared with a state machine realized by hardware, the microcontroller can adjust the size of the reference current source more flexibly according to the requirement. In addition, in the application of charging the mobile phone and the like, the microcontroller is inevitably used in the charging chip, the logic control function of the microcontroller can be multiplexed, and a state machine is omitted, so that the flexibility of logic control is increased, and the hardware overhead is saved. Fig. 5 is a schematic diagram showing a microcontroller instead of a state machine.
In practical application, each device can be an independent device, or a mirror switch, a reference current source, a high-end comparator, (a level shifter) and a microcontroller can be integrated into a power management microcontroller.
Example four:
in the fourth embodiment, compared with the third embodiment, an input polarity switch is added, as shown in fig. 6, a source terminal of the mirror switch and a source terminal of the power switch are connected to the first input terminal and the second input terminal of the high-end comparator through the input polarity switch, and the microcontroller is further connected to the input polarity switch for controlling switching control of the input polarity switch.
Input polarity change-over switchActing to eliminate input deviation V of high-side comparatoroffset. In practical application, the input deviation V of the comparator input end can be caused by the mismatching of the semiconductor devicesoffset. Equivalent to connecting an offset voltage V in series with the input end of the ideal comparatoroffsetAs shown in fig. 7 and 8. In order to eliminate the input deviation, an input polarity switch is added to the input end of the high-end comparator, and the selection of the switch is controlled by the microcontroller. The input offset cancellation principle is as follows:
(1) make the positive and negative terminals of the comparator input select V respectivelyOUTAnd VMIRRObtaining an output current value I through iterative comparisonMIRR，1Make VOUT-Voffset＝VMIRR. Since the power tube and the mirror tube work in a linear region, the resistance can be approximated to R, and R is obtainedOUT-Voffset＝R*N*IMIRR，1 (a)
(2) Make the positive and negative terminals of the comparator input select V respectivelyMIRRAnd VOUTObtaining an output current value I through iterative comparisonMIRR，2Make VMIRR-Voffset＝VOUT. Obtaining R IOUT＝R*N*IMIRR，2-Voffset (b)
(3) Adding formula (a) and formula (b) to obtain 2R IOUT＝R*N*IMIRR，1+R*N*IMIRR，2And finishing to obtain:
1oUT＝(IMIRR，1+IMIRR，2)/2*N
as can be seen from the above formula, the input deviation V of the comparator can be eliminated by averaging the current values obtained by two iterative comparisonsoffsetAnd the comparison result is more accurate.

Claims (10)

1. The utility model provides a power switch current detection circuit, a serial communication port, including power switch, the mirror switch, the reference current source, high-end comparator and state machine, the input and the drive end of mirror switch are connected with power switch's input and drive end respectively, the first input of reference current source and high-end comparator is connected to the output of mirror switch, the second input of high-end comparator is connected to power switch's output, the state machine is connected to high-end comparator's output, the reference current source is connected to the output of state machine, power switch and mirror switch are NMOS, power switch and mirror switch's input are the drain terminal, power switch and mirror switch's output are the source terminal, power switch and mirror switch's drive end are the grid end.
2. The power switch current sense circuit of claim 1, wherein the power switch is coupled to a gate terminal of a mirror switch with a turn-off charge pump boost circuit.
3. The power switch current detection circuit of claim 1 or 2, further comprising an input polarity switch, wherein the source terminal of the mirror switch and the source terminal of the power switch are connected to the first input terminal and the second input terminal of the high-side comparator via the input polarity switch, and the state machine is further connected to the input polarity switch.
4. The power switch current sense circuit of claim 1 or 2, wherein the reference current source is a digitally controlled reference current source.
5. The power switch current sense circuit of claim 1 or 2, further comprising a level shifter having an input coupled to the output of the high side comparator and an output coupled to the state machine input.
6. The utility model provides a power switch current detection circuit, a serial communication port, including power switch, the mirror image switch, the reference current source, high-end comparator and microcontroller, the input and the drive end of mirror image switch are connected with power switch's input and drive end respectively, the first input of reference current source and high-end comparator is connected to the output of mirror image switch, the second input of high-end comparator is connected to power switch's output, microcontroller is connected to high-end comparator's output, the output of microcontroller is connected the reference current source, power switch and mirror image switch are NMOS, power switch and mirror image switch's input are the drain terminal, power switch and mirror image switch's output are the source end, power switch and mirror image switch's drive end are the grid end.
7. The power switch current sense circuit of claim 6, wherein the power switch is connected to a gate terminal of a mirror switch with a charge pump boost circuit that can be turned off.
8. The power switch current detection circuit of claim 6 or 7, further comprising an input polarity switch, wherein the source terminal of the mirror switch and the source terminal of the power switch are connected to the first input terminal and the second input terminal of the high-side comparator via the input polarity switch, and the microcontroller is further connected to the input polarity switch.
9. The utility model provides a power switch overcurrent detection circuit, a serial communication port, including power switch, the mirror image switch, reference current source and high-end comparator, the input and the drive end of mirror image switch are connected with power switch's input and drive end respectively, the first input of reference current source and high-end comparator is connected to the output of mirror image switch, the second input of high-end comparator is connected to power switch's output, the output of high-end comparator outputs overcurrent detection result, power switch and mirror image switch are NMOS, power switch and mirror image switch's input are the drain terminal, power switch and mirror image switch's output are the source terminal, power switch and mirror image switch's drive end are the grid end.
10. The power switch over-current detection circuit of claim 9, further comprising a level shifter having an input connected to the output of the high-side comparator.
CN202123140183.1U 2021-09-16 2021-12-14 Power switch overcurrent detection circuit and current detection circuit Active CN216670106U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115454199A (en) * 2022-09-20 2022-12-09 圣邦微电子（北京）股份有限公司 Current selection circuit

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US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
US8754635B2 (en) * 2011-06-14 2014-06-17 Infineon Technologies Ag DC decoupled current measurement
CN109917176B (en) * 2019-04-04 2023-12-15 上海东软载波微电子有限公司 Drive overcurrent detection circuit

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115454199A (en) * 2022-09-20 2022-12-09 圣邦微电子（北京）股份有限公司 Current selection circuit
CN115454199B (en) * 2022-09-20 2024-02-06 圣邦微电子（北京）股份有限公司 Current selection circuit

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