CN216646688U - Volt-ampere characteristic analysis and test device for semiconductor laser - Google Patents

Volt-ampere characteristic analysis and test device for semiconductor laser Download PDF

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CN216646688U
CN216646688U CN202123398066.5U CN202123398066U CN216646688U CN 216646688 U CN216646688 U CN 216646688U CN 202123398066 U CN202123398066 U CN 202123398066U CN 216646688 U CN216646688 U CN 216646688U
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laser
current
voltage
connector
source meter
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陈洋俊
奚燕萍
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Rizhao Ai Rui Optoelectronics Technology Co ltd
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Rizhao Ai Rui Optoelectronics Technology Co ltd
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Abstract

The utility model discloses a volt-ampere characteristic analysis and test device of a semiconductor laser, which comprises a program-controlled source meter, wherein the program-controlled source meter is connected with a connector, the connector is used for connecting a TO laser, and the program-controlled source meter is connected with a computer controller; and the program control source meter provides voltage and current for the TO laser through the connector according TO a set requirement, measures and records the voltage and current passing through the TO laser, converts the measured value and sends the converted value TO the computer controller. The utility model has the beneficial effects that: the forward and reverse voltage-current curve scanning can be completed simultaneously, the testing efficiency is improved, the original data of the scanning curve can be stored, the key parameters of the data can be extracted and analyzed as required, and the accuracy of the testing result is improved.

Description

Volt-ampere characteristic analysis and test device for semiconductor laser
Technical Field
The utility model belongs to the technical field of semiconductor laser testing, and particularly relates to a volt-ampere characteristic analysis testing device for a semiconductor laser.
Background
In the performance test and analysis requirements of a semiconductor laser, the volt-ampere characteristic of the laser is particularly important, and particularly in the test analysis after the laser fails, the volt-ampere characteristic of the laser can very intuitively reflect the state of a PN junction of a laser chip, so that the volt-ampere characteristic has a very important reference function for judging the performance of the chip and a failure mechanism. In the testing process, the protection of the device to be tested is also an important aspect to be ignored, and the irreversible damage to the device to be tested caused by excessive current or voltage in the testing process is to be avoided. In addition, it is also an important aspect to extract and store test data to facilitate subsequent accurate analysis of device performance. Therefore, the testing system or device capable of conveniently, safely and accurately measuring and visually displaying the volt-ampere characteristic parameters and curves of the semiconductor laser has great help for analyzing the performance of the chip.
The existing equipment for testing the volt-ampere characteristic of the diode in the industry at present is mainly a transistor graphic instrument, the operation panel of the equipment is complex, the arrangement is complicated, and the following defects exist:
1. the graphic instrument achieves the effect of current limiting protection by connecting a resistor with high resistance, the resistance of the current limiting resistor is too high to influence the measurement precision, the selection is too low to reduce the protection effect on a chip, and the possibility of damaging a device to be measured is reduced.
2. The graphic instrument displays a measurement curve through the oscilloscope, the test result is estimated and read through scales on the display screen and is influenced by the focusing of the electron beam, and the estimation and reading accuracy of the test result is low.
3. The graph instrument display curve can not be stored into data for further analysis.
4. The scanning voltage range of the graphic instrument is too large and the safety is low for the semiconductor laser.
5. Aiming at the analysis and test of the semiconductor laser, the transistor graphic instrument has redundant functions and high cost.
In summary, there is an urgent need for a device for analyzing and testing volt-ampere characteristics of a semiconductor laser to scan forward and reverse voltage-current curves simultaneously, store the original data of the scan curves, extract and analyze key parameters of the data as required, and improve the accuracy of the test results.
Disclosure of Invention
In order to overcome the defects of the prior art, the utility model provides a volt-ampere characteristic analysis testing device for a semiconductor laser.
The utility model adopts the following specific technical scheme:
a volt-ampere characteristic analysis and test device for a semiconductor laser comprises a program-controlled source meter, wherein the program-controlled source meter is connected with a connector, the connector is used for connecting a TO laser, and the program-controlled source meter is connected with a computer controller;
and the program control source meter provides voltage and current for the TO laser through the connector according TO a set requirement, measures and records the voltage and current passing through the TO laser, converts the measured value and sends the converted value TO the computer controller.
The program control source meter is a novel general tool integrating voltage sources, current sources and measurement functions of the source meter and a source measurement unit product, and is higher in sensitivity, lower in noise and higher in input impedance compared with an electrometer. The unique performance is realized by a remote preamplifier arranged on a program control source meter, the amplifier provides a very sensitive bidirectional amplifier for measuring or generating the current of a tested device, and a high-level signal output by the remote preamplifier is transmitted to a control host computer through a cable, so that a user can directly or closely connect the signal, and the influence of cable noise is reduced;
the programmable source meter can measure voltage, current and resistance at a rate that cannot be achieved by the electrometer. It can take 2000 source/measurement readings per second into internal memory. The device can measure fast small current, a 100nA range can respond to signals as short as 5ms, and a larger range can respond to signals of hundreds of microseconds;
the programmable source meter can read to its memory buffer at speeds in excess of 2000 readings/second, the IEEE-488 bus output can send up to 75 source/measurement readings per second to the external computer controller, including pass/fail indications, and can also provide up to 2.2W for a 4 quadrant source, and measurement sensitivity at microvolt levels. At up to 20V, currents from the 1pA range to the 100mA range can be measured, a voltage range of 200mV to 200V can be provided, and large values can be set that define the source or sink voltage or current.
The program-controlled source meter is used as a voltage source and a current source for testing, and a device for testing and recording the volt characteristic parameters of the TO laser is connected with the TO laser TO be tested through the connector, so that forward and reverse voltage-current curve scanning is completed simultaneously, original scanning curve data are stored, key parameter extraction and analysis can be performed on the data according TO requirements, and the accuracy of a testing result is improved.
As shown in fig. 1, the volt-ampere characteristic analyzing and testing device for a semiconductor laser comprises a programmable source meter, a connector and a computer controller:
inserting a TO laser TO be tested into a connector, respectively leading out power lines from pins corresponding TO the anode and the cathode of the TO laser on the connector TO be connected into the anode and the cathode of a high-precision program-controlled source meter, and selecting a required source mode, such as a voltage source, on the program-controlled source meter; setting the current or the current protection range of the device to be tested, for example, setting current-limiting protection; finally, according to the test requirements, starting from the initial test voltage or current, setting voltage or current point by point according to a specific step length, simultaneously recording the working current or voltage of the device to be tested measured by the source meter under the corresponding set voltage or current, after the test of all the voltage or current points is completed, drawing the volt-ampere characteristic curve of the device to be tested according to the obtained voltage-current or current-voltage test result, and calculating the starting voltage of the device to be tested according to a specific algorithm, wherein the test flow is shown in fig. 5 and 6 corresponding to different test modes, namely a voltage source mode and a current source mode, and the corresponding test result is shown in fig. 7 and 8.
As a further improvement of the utility model, the number of the connectors is more than or equal to 3, and the number A of the pin jacks of the connectors is more than or equal to 3.
By adopting the design, the connector is provided with a plurality of TO laser machines which can measure a plurality of TO laser machines simultaneously, the test efficiency is further improved, and the quantity A of the pin jacks of the connector is more than or equal TO 3, so that the connector can adapt TO the TO laser machines with different pins, namely, in a plurality of connectors, the quantity of the pin jacks of the connector is the same as or different from that of the pin jacks of the connector, but the quantity A is more than or equal TO 3.
As a further improvement of the present invention, the volt-ampere characteristic analysis and test device for the semiconductor laser further comprises a test bench, wherein the program-controlled source meter is fixed on the top of the test bench, the connector is fixed on the top of the test bench, and a protective cover is arranged for placing the TO laser in the protective cover during the test process.
This improvement provides a semiconductor laser volt-ampere characteristic analysis testing arrangement implementation, fix programme-controlled source table and connector on the testboard, be convenient for realize the orderly range of a plurality of connectors, make the test field regular, the record management of being convenient for, also conveniently provide power and network signal line connection etc. simultaneously TO programme-controlled source table and other equipment, the operation of being convenient for, the protection casing, be used for placing the TO laser instrument in the protection casing in the testing process, can prevent that T0 laser instrument is damaged by accident in the testing process, guarantee going on smoothly of test, reduce unexpected loss.
Preferably, the connectors are provided with five groups, each group being provided with two connectors.
As a further improvement of the utility model, the programmable source meter is connected with a remote preamplifier to complete the scanning and recording of the current or voltage of the laser. The remote preamplifier of the program-controlled source meter provides a very sensitive bidirectional amplifier for measuring or generating the current of the tested device, and a high-level signal output by the remote preamplifier is sent to the control host computer through a cable, so that a user can directly or closely connect the signal, and the influence of cable noise is reduced.
As a further improvement of the utility model, the remote preamplifier is connected with a computer controller, and the raw characteristic data obtained by scanning is used for completing the extraction and analysis of the characteristic parameters of the laser and displaying the result on a display. After the far-end preamplifier tests the voltage or current point, the obtained voltage-current or current-voltage test result can be sent to a computer in a binary reading format, a volt-ampere characteristic curve of the device to be tested is drawn, the starting voltage of the device to be tested is calculated according to a specific algorithm, and the starting voltage and the volt-ampere characteristic curve are displayed on a display screen; the obtained voltage-current or current-voltage test result can also be displayed on a display screen of a program control source meter, a volt-ampere characteristic curve is drawn in a manual point drawing mode, and the starting voltage of the device to be tested is calculated according to a specific algorithm.
Preferably, the computer controller uses the results of the extraction analysis to plot the voltammetric characteristics and display them on a display.
The utility model has the positive effects that:
1. and forward and reverse voltage-current curve scanning is completed at the same time, so that the testing efficiency is improved.
2. The original data of the scanning curve can be stored, key parameters can be extracted and analyzed according to requirements, and the accuracy of the test result is improved.
3. The program-controlled source meter has special current-limiting protection setting, can be flexibly set aiming at different devices to be tested, ensures the safety of testing and realizes the protection effect on the devices to be tested.
Drawings
FIG. 1 is a schematic view of a voltammetric analysis testing apparatus for a semiconductor laser according to the present invention;
FIG. 2 is a schematic diagram of a three-dimensional structure of a voltammetric analysis testing apparatus for a semiconductor laser according to the present invention;
FIG. 3 is an enlarged view of a voltammetry characteristic testing apparatus A of the semiconductor laser shown in FIG. 2 according to the present invention;
FIG. 4 is a schematic structural diagram of a connector plug of a voltammetric testing apparatus for a semiconductor laser according to the present invention;
FIG. 5 is a voltage source mode test flow diagram of the present invention;
FIG. 6 is a flow chart of the current source mode test of the present invention;
FIG. 7 is an exemplary graph of voltage mode test results according to the present invention;
FIG. 8 is an exemplary graph of current mode test results of the present invention;
illustration of the drawings: 1-display, 2-host, 3-programmable source meter, 4-connector, 5-TO laser tester, 6-connector, 7-test bench, 8-connector component, 801-connector housing, 802-wiring terminal, 803-connector plug, 8031-pin jack, 8032-pin jack shield, 8033-fixed shaft, 8034-wire harness, 9-test bench top plate.
Detailed Description
The utility model is described in detail below with reference to the following figures and specific embodiments:
the specific embodiment is as follows:
in the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the utility model.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.
Specific implementations of the present invention are described in detail below with reference to specific embodiments.
The first embodiment is as follows:
a volt-ampere characteristic analysis and test device of a semiconductor laser comprises a test bench 7, a test bench top plate 9 is arranged at the top of the test bench, a cable is arranged at the left side of the test bench top plate 9 and is connected to a wire connector 6, the test bench is connected to a program control source meter 3 and a host computer 2 through the wire connector 6, the host computer 2 is connected with the program control source meter 3 through data, five groups of connector assemblies 8 are connected to the left side of the program control source meter 3, each group of connector assemblies 8 comprises connector plugs 803 with the same number of two pin jacks, each connector assembly 8 is provided with a circuit board, the connector plugs 803 are fixed on the circuit board and are packaged through a connector shell 801, each connector assembly 8 is provided with a boundary terminal 802, the boundary is connected with the program control source meter 3 of the wire terminal 802 to provide required voltage and current, each connector plug 803 is provided with two pin jacks 8031 with the same number of two pin jacks, the pin jacks 8031 are packaged in a pin jack shield 8032, and is fixed TO a circuit board in the connector assembly 8 by a fixing shaft 8033, and a harness 8034 is provided at the rear thereof TO be connected TO a terminal block 802 for taking out voltage and current TO supply the TO laser.
When in specific use:
inserting a TO-be-detected TO laser 5 into a pin jack 8031, leading power lines out of pins, corresponding TO the anode and the cathode of the TO laser, on the pin jack 8031, respectively TO be connected TO the anode and the cathode of a high-precision program control source table 3, and selecting a required source mode, such as a voltage source, on the program control source table 3; setting the current or the current protection range of the device to be tested, for example, setting current-limiting protection; and finally, according to the test requirement, starting from the initial test voltage or current, setting voltage or current point by point according to a specific step length, simultaneously recording the working current or voltage of the device to be tested measured by the source meter 3 under the corresponding set voltage or current, displaying the obtained voltage-current or current-voltage test result on a display screen of the program control source meter 3 after the test of all the voltage or current points is completed, sending the result to a computer host according to the binary property, drawing a volt-ampere characteristic curve of the device to be tested under the analysis of a computer controller in the computer host, and calculating the starting voltage of the device to be tested according to a specific algorithm.
The test flow is shown in fig. 5 and 6 for different test modes, i.e., voltage source mode and current source mode, and the corresponding test results are shown in fig. 7 and 8, for example.
The second embodiment is as follows:
on the basis of the first specific embodiment, after the test of all the voltage or current points is completed, the obtained voltage-current or current-voltage test result is displayed on a display screen of the program control source table 3, a volt-ampere characteristic curve is drawn in a manual point drawing mode, and the starting voltage of the device to be tested is calculated according to a specific algorithm.
The third concrete example:
on the basis of the above embodiment, five groups of connector assemblies 8 are connected to the left side of the program control source table 3, each group of connector assemblies 8 includes two connector plugs 803 having the same number of pin jacks, and the number of pin jacks of adjacent connector plugs 803 is different.
Specifically, the number of pin holes of the connector plug 803 is 3, 5, 7 from left to right.
The foregoing has outlined broadly some of the aspects and features of the various embodiments, which should be construed to be merely illustrative of various potential applications. Other beneficial results can be obtained by applying the disclosed information in a different manner or by combining various aspects of the disclosed embodiments. Other aspects and a more complete understanding may be obtained by reference to the detailed description of the exemplary embodiments taken in conjunction with the accompanying drawings, based on the scope defined by the claims.
In addition, the utility model also discloses the following technical scheme:
the first scheme is as follows:
the programmable source meter is connected with a remote preamplifier and is used for finishing the scanning and recording of the current or the voltage of the laser. The remote preamplifier of the program-controlled source meter provides a very sensitive bidirectional amplifier for measuring or generating the current of the tested device, and a high-level signal output by the remote preamplifier is sent to the control host computer through a cable, so that a user can directly or closely connect the signal, and the influence of cable noise is reduced.
The above examples illustrate the present invention in detail. It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those changes, modifications, additions, deletions, and substitutions which may be made by those skilled in the art within the spirit of the present invention are also within the scope of the present invention.

Claims (6)

1. A volt-ampere characteristic analysis and test device of a semiconductor laser is characterized by comprising a program-controlled source meter, wherein the program-controlled source meter is connected with a connector, the connector is used for connecting a TO laser, and the program-controlled source meter is connected with a computer controller;
and the program control source meter provides voltage and current for the TO laser through the connector according TO a set requirement, measures and records the voltage and current passing through the TO laser, converts the measured value and sends the converted value TO the computer controller.
2. The voltammetry characteristic analysis and test device for a semiconductor laser as claimed in claim 1, wherein the number of connectors is a number, and the number a of pin insertion holes of the connectors is greater than or equal to 3.
3. The apparatus of claim 2, further comprising a test station, wherein the programmable source meter is mounted on top of the test, the connector is mounted on top of the test station, and a shield is provided TO place the TO laser in the shield during the test.
4. A voltammetry testing device for semiconductor lasers as in claim 3, wherein said connectors are provided in five groups of two connectors.
5. A voltammetry testing apparatus for a semiconductor laser as claimed in any of claims 1 to 4, wherein said programmable source meter is connected to a remote preamplifier for scanning and recording current or voltage of the laser.
6. A volt-ampere characteristic analysis and test device for semiconductor lasers as claimed in claim 5, wherein said remote preamplifier is connected with a computer controller, and the original characteristic data obtained by scanning is used to extract and analyze the characteristic parameters of the laser and display the result on a display.
CN202123398066.5U 2021-12-31 2021-12-31 Volt-ampere characteristic analysis and test device for semiconductor laser Active CN216646688U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116626467A (en) * 2023-05-31 2023-08-22 西安工程大学 Detection method for rapidly detecting defective silicon photomultiplier chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116626467A (en) * 2023-05-31 2023-08-22 西安工程大学 Detection method for rapidly detecting defective silicon photomultiplier chip
CN116626467B (en) * 2023-05-31 2024-01-05 西安工程大学 Detection method for rapidly detecting defective silicon photomultiplier chip

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