CN216413084U - Light emitting diode packaging structure with high heat dissipation performance - Google Patents
Light emitting diode packaging structure with high heat dissipation performance Download PDFInfo
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- CN216413084U CN216413084U CN202123177189.6U CN202123177189U CN216413084U CN 216413084 U CN216413084 U CN 216413084U CN 202123177189 U CN202123177189 U CN 202123177189U CN 216413084 U CN216413084 U CN 216413084U
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Abstract
A light emitting diode packaging structure with high heat dissipation performance comprises a bearing substrate, a plurality of light emitting units and a heat dissipation unit. The light emitting units are arranged on the bearing substrate and respectively provided with a light emitting epitaxial structure and an electrode group which is formed on the light emitting epitaxial structure and used for being electrically connected with the outside. The heat dissipation unit is covered on at least part of the surface of the bearing substrate and is positioned at the same side with the light emitting unit, the heat dissipation unit is formed in an atomic layer deposition mode, the total thickness is not more than 1 mu m, and the heat dissipation unit can be densely and completely covered on the surfaces of the bearing substrate and the light emitting unit and is used for dissipating heat generated by the light emitting unit during actuation to the outside without influencing light emitting.
Description
Technical Field
The present invention relates to a light emitting diode package structure, and more particularly, to a light emitting diode package structure with high heat dissipation.
Background
The technical development of micro led devices has become mature, and the micro led devices are gradually developed toward high power to pursue higher light emitting efficiency.
In general, a heat dissipation substrate/fin is disposed on a bottom surface of an epitaxial substrate of the micro light emitting diode device or a heat dissipation paste is applied to the bottom surface to assist in discharging heat generated during operation of the micro light emitting diode device. As the power of the micro led device is increased and more heat is generated, the epitaxial substrate for epitaxial growth has poor heat dissipation, or the thermal paste contains thermal impedance components and is prone to generate voids with the substrate, which tends to cause heat accumulation and ineffective heat dissipation, resulting in poor light emitting performance of the micro led device and shortened device life.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a light-emitting diode packaging structure with high heat dissipation performance so as to improve the heat dissipation efficiency of a light-emitting diode.
The utility model discloses a light emitting diode packaging structure with high heat dissipation performance, which comprises a bearing substrate, a plurality of light emitting units and a heat dissipation unit.
The light-emitting units are arranged on the bearing substrate, each light-emitting unit is provided with a light-emitting epitaxial structure and an electrode group which is formed on the light-emitting epitaxial structure and used for being electrically connected with the outside.
The heat dissipation unit covers at least part of the surface of the bearing substrate and is positioned at the same side as the light emitting unit, the heat dissipation unit is formed in an atomic layer deposition mode, and the total thickness is not more than 1 mu m.
Preferably, the light emitting diode package structure with high heat dissipation performance of the present invention, wherein the heat dissipation unit has light transmittance, covers the light emitting unit and the surface of the supporting substrate exposed from the space between the light emitting units, and exposes the electrode assembly of the light emitting unit to the outside.
Preferably, in the light emitting diode package structure with high heat dissipation performance of the present invention, the heat dissipation unit at least has a heat conduction layer and a heat radiation layer, and the heat radiation layer is located at the outermost side and exposed to the outside.
Preferably, in the led package structure with high heat dissipation performance of the present invention, the heat dissipation unit further includes a dielectric insulation layer, and the dielectric insulation layer is located at the innermost side of the heat dissipation unit.
Preferably, the light emitting diode package structure with high heat dissipation performance of the present invention, wherein the total thickness of the heat dissipation unit is between 0.1nm and 300 nm.
Preferably, in the light emitting diode package structure with high heat dissipation performance of the present invention, the carrier substrate is selected from an epitaxial substrate or a circuit board with a circuit structure.
Preferably, the light emitting diode package structure with high heat dissipation performance of the present invention, wherein the carrier substrate is selected from a light-permeable epitaxial substrate, the light emitting diode package structure further includes a circuit board having a plurality of electrical ports located on a surface thereof, the circuit board is disposed on a side of the light emitting unit opposite to the carrier substrate, and the electrical ports are respectively and correspondingly connected to the electrode sets of the light emitting unit.
Preferably, the light emitting diode package structure with high heat dissipation performance of the present invention, wherein the light emitting unit is selected from a micro light emitting diode or a sub-millimeter light emitting diode.
The utility model has the beneficial effects that: the total thickness of the heat dissipation unit is controlled to be not more than 1 mu m by utilizing an atomic layer deposition mode, and the heat dissipation unit has light transmission performance, so that the heat dissipation unit and the light emitting unit can be positioned at the same side, heat generated by the light emitting unit during actuation is dissipated outwards, the heat dissipation capability of the light emitting diode structure is improved, and light emitting is not influenced.
Drawings
FIG. 1 is a flow chart illustrating an embodiment of a method for fabricating a light emitting diode package structure with high heat dissipation capability according to the present invention;
FIG. 2 is a schematic cross-sectional view illustrating a light emitting diode package structure with high heat dissipation performance manufactured by the embodiment;
fig. 3 is a partial schematic view, which is an enlarged view of a in fig. 2 and illustrates the structure of the heat dissipating unit of the embodiment;
FIG. 4 is a schematic cross-sectional view illustrating an embodiment of the embodiment configured with a circuit board;
FIG. 5 is a schematic cross-sectional view illustrating another embodiment of the light emitting diode package structure;
FIG. 6 is a schematic cross-sectional view illustrating an embodiment in which the carrier substrate of the embodiment is a circuit board;
fig. 7 is a flowchart illustrating another process sequence of fabricating a light emitting diode package structure with high heat dissipation performance according to the present invention.
Detailed Description
Before the present invention is described in detail, it should be noted that in the following description, like elements are represented by like reference numerals.
Referring to fig. 2 and fig. 3, an embodiment of a light emitting diode package structure with high heat dissipation performance according to the utility model is described, which includes a carrier substrate 2, a plurality of light emitting units 3, and a heat dissipation unit 4.
One surface of the carrier substrate 2 defines a plurality of die-disposing regions 21 arranged at intervals. The carrier substrate 2 may be selected from an epitaxial substrate or a circuit board, and fig. 2 illustrates the carrier substrate 2 as a light-transmissive epitaxial substrate.
The light emitting units 3 are respectively and correspondingly disposed in the die disposing regions 21, and each light emitting unit 3 has a light emitting epitaxial structure 31 formed on the surface of the carrier substrate 2, and an electrode group 32 formed on the light emitting epitaxial structure 31 for electrically connecting to the outside. The light emitting unit 3 may be selected from a light emitting diode structure, a micro light emitting diode structure or a sub-millimeter light emitting diode structure, and may be designed as a horizontal structure or a vertical structure according to the requirement, and the light emitting unit 3 may further have an electrical connection structure of a common electrode (e.g., a common cathode) according to the requirement. In the present embodiment, it is illustrated that the light emitting units 3 are horizontal micro light emitting diode structures, and each light emitting unit 3 is independent, the light emitting epitaxial structure 31 has a multi-layer epitaxial layer, for example, the light emitting epitaxial structure 31 may have an undoped epitaxial layer, an n-type epitaxial layer, a multi-quantum well light emitting layer formed on a part of the surface of the n-type epitaxial layer, a p-type epitaxial layer disposed on the multi-quantum well light emitting layer, and a current diffusion layer formed on the p-type epitaxial layer, which are sequentially upward from the surface of the supporting substrate 2. The electrode group 32 is formed on the corresponding light emitting epitaxial structure 31, and has an N-type electrode 321 formed on the exposed surface of the N-type epitaxial layer, and a P-type electrode 322 formed on the current diffusion layer. It should be noted that the specific structural details of the epitaxial layer of the light emitting epitaxial structure 31, the arrangement position or the material of the electrode set 32, etc. are known in the art, and may be designed in different ways according to the requirements, and therefore, the present invention is not limited by the foregoing or the drawings.
The heat dissipation unit 4 covers the light emitting units 3 and the surface of the carrier substrate 2 exposed from the light emitting units 3, and is located at the same side as the light emitting units 3, and the electrode group 32 of the light emitting units 3 is exposed to the outside for external electrical connection.
In detail, the heat dissipation unit 4 is formed by Atomic Layer Deposition (ALD), and the thickness can be controlled to be very thin (the total thickness is not more than 1 μm). Preferably, the total thickness of the heat dissipation unit 4 is between 0.3nm and 300nm, and further, the total thickness of the heat dissipation unit 4 is between 0.1nm and 300 nm. Referring to fig. 3, the heat dissipation unit 4 has a dielectric insulation layer 41 and a heat conduction layer 42 located at the innermost side, and a heat radiation layer 43 located at the outermost side and exposed to the outside, and the thicknesses of the dielectric insulation layer 41, the heat conduction layer 42, and the heat radiation layer 43 are respectively 0.1nm to 100 nm. The dielectric insulating layer 41 is made of a dielectric insulating material and at least covers the epitaxial light-emitting structure 31 to ensure that the light-emitting units 3 are electrically independent from each other. The heat conduction layer 42 is made of a heat conductive material for conducting heat generated when the light emitting unit 3 operates to the outside. The heat radiation layer 43 covers the heat conduction layer 42, and is made of a heat radiation material for dissipating heat from the heat conduction layer 42 to the outside. It should be noted that, when the heat dissipating unit 4 is covered on the light emitting unit 3, the heat dissipating unit 4 may have a light transmittance according to the position related to the light emitting direction of the light emitting unit 3, so as not to affect the light emitting of the light emitting unit 3.
The dielectric insulating material is mainly oxide and can be selected from alumina, silicon oxide, titanium oxide, magnesium oxide, zinc oxide or one of other metal oxides. The heat conducting material may be nitride, oxide or carbide, and may be selected from one of nitride, oxide and carbide of boron, magnesium, aluminum, beryllium and silicon. The heat radiating material is mainly an oxide, and may be selected from alumina, titania, silica, zinc oxide, or one of other metal oxides. It should be noted that the selection of the dielectric insulating material, the thermal conductive material and the thermal radiating material varies according to the product design or the process requirements, and should not be limited by the materials listed above.
In this embodiment, the dielectric insulating material is selected from aluminum oxide, the thermal conductive material is selected from aluminum nitride, and the thermal radiation material is selected from aluminum oxide, but not limited thereto.
More specifically, since the heat dissipation unit 4 is formed by atomic layer deposition, and the atomic layer deposition is to form a "monatomic level" film layer of material in a vapor phase environment and deposit the material layer by layer on the surface to be deposited, it can be controlled to a single layer structure (Monolayer) with uniform thickness according to the requirement, and the thickness of the heat dissipation unit 4 can be controlled to nanometer level. Since the ald process is performed in a vapor phase environment, the heat dissipation unit 4 can completely and densely cover the surfaces of the light emitting units 3 and/or the carrier substrate 2 with various complex shapes, thereby providing better coverage. Since the related experimental parameters and the selected materials of the ald process are known to those skilled in the art, they will not be described further.
In some embodiments, the heat dissipation unit 4 may also be configured without the dielectric insulation layer 41 as required, and only has the heat conduction layer 42 and the heat radiation layer 43 for heat conduction and heat dissipation.
Referring to fig. 4, in some embodiments, the light emitting panel with the carrier substrate 2 as the light emitting display direction can be obtained by electrically connecting the led package structure shown in fig. 2 to another circuit board 5. In detail, the circuit board 5 has a plurality of electrical ports 51 on the surface thereof for electrically connecting with the electrode group 32 of the light emitting unit 3, and a control circuit (not shown) electrically connected with the electrical ports 51, and the light emitting panel can be manufactured by electrically connecting the circuit board 5 with the electrode group 32 of the light emitting unit 3.
Referring to fig. 5, in some embodiments, the carrier substrate 2 may also be another transparent substrate other than an epitaxial substrate, the heat dissipation unit 4 may be pre-formed on the entire surface of the carrier substrate (transparent substrate) 2, and the light emitting unit 3 may be disposed on the surface of the heat dissipation unit 4 by a die transfer method, so as to form the light emitting diode package structure shown in fig. 5.
Referring to fig. 6, in other embodiments, the carrier substrate 2 of the led package structure may also be a circuit board having a circuit structure (not shown), the circuit board has a plurality of electrical connection pads 22 connected to the circuit structure and correspondingly disposed in the die arrangement region 21, the heat dissipation unit 4 may be pre-deposited on the surface of the carrier substrate (circuit board) 2, and the electrical connection pads 22 are exposed, and the light emitting units 3 are bonded to the carrier substrate 2 in a flip-chip manner and are electrically connected to the corresponding electrical connection pads 22. At this time, the heat dissipation unit 4 and the light emitting unit 3 are located at the same side, but do not cover the surface of the light emitting unit 3.
Referring to fig. 1 to 3, a method for fabricating the embodiment of the light emitting diode package structure is described as follows. The manufacturing method includes a providing step 61, a light emitting unit setting step 62, and a heat dissipating unit forming step 63.
The providing step 61 provides the carrier substrate 2, and defines the die arrangement regions 21 arranged at intervals on one surface of the carrier substrate 2. In this embodiment, the carrier substrate 2 is a light-transmissive epitaxial substrate.
The light-emitting unit disposing step 62 is to form an epitaxial layer on the carrier substrate 2 by an epitaxial growth method, and remove a part of the epitaxial layer by an etching method to form the light-emitting epitaxial structure 31 corresponding to the die disposing region 21; next, the electrode group 32 is formed on each corresponding epitaxial light-emitting structure 31 by coating or deposition, so as to obtain the light-emitting unit 3 disposed corresponding to the die-disposing region 21.
The heat dissipation unit forming step 63 is performed after the light emitting unit setting step 62, and the heat dissipation unit 4 located on the same side as the light emitting unit 3 is formed on the light emitting unit 3 and the surface of the carrier substrate 2 exposed from the light emitting unit 3 in an atomic layer deposition manner, and the total thickness of the heat dissipation unit 4 is not more than 1 μm. In the present embodiment, the heat dissipation unit 4 is formed by plasma-assisted atomic layer deposition, and the process temperature is not higher than 60 ℃, so as to prevent the light emitting unit 3 from being damaged due to the high process temperature. In detail, the heat dissipating unit 4 has a multi-layer structure, each layer has a thickness of 0.1nm to 100nm, and the heat dissipating unit 4 has the dielectric insulating layer 41 formed of a dielectric insulating material and located at the innermost side, the heat conductive layer 42 formed of a heat conductive material and formed on the dielectric insulating layer, and the heat radiating layer 43 formed of a heat radiating material and located at the outermost side to be exposed to the outside. In the present embodiment, the dielectric insulating material is selected from aluminum oxide, the thermal conductive material is selected from aluminum nitride, and the thermal radiation material is selected from aluminum oxide, but not limited thereto.
In some embodiments, the heat dissipating unit forming step 63 may also form the heat dissipating unit 4 having only the heat conductive layer 42 and the heat radiating layer 43 as required.
In some embodiments, the manufacturing method further includes a step 64 of performing after the step 63 of forming the heat dissipation unit, to dispose the circuit board 5 on a side of the light emitting unit 2 opposite to the carrier substrate 2, and to electrically connect the electrical port 51 of the circuit board 5 on the surface with the electrode group 32 of the light emitting unit 3, respectively, so as to obtain the light emitting diode package structure shown in fig. 4.
Referring to fig. 5, 6 and 7, it is to be noted that when the carrier substrate 2 is a circuit board or another transparent substrate not used for epitaxial growth, the circuit board has the electrical connection pads 22 respectively disposed in the die-disposing regions 22. As shown in fig. 7, the manufacturing method may also perform the heat dissipation unit forming step 63 and then perform the light emitting unit disposing step 62 as required, so as to obtain the light emitting diode package structure shown in fig. 5 or 6.
Specifically, when the carrier substrate 2 is another transparent substrate, the step 63 of forming the heat dissipation unit may be performed first, the heat dissipation unit 4 is formed on the surface of the carrier substrate 2, and then the light emitting unit 3 prepared in advance is transferred to the surface of the heat dissipation unit 4 by using a die transfer method, so as to obtain the light emitting diode package structure shown in fig. 5. Similarly, when the carrier substrate 2 is the circuit board, the heat dissipation unit forming step 63 may also be performed first, so that the heat dissipation unit 4 is formed on the surface of the carrier substrate 2 first and the electrical connection pads 22 are exposed to the outside; then, the light emitting unit disposing step 62 is performed to dispose the pre-formed light emitting units 3 in a flip chip manner, and electrically connect the pre-formed light emitting units with the corresponding electrical connection pads 22, so as to obtain the light emitting diode package structure shown in fig. 6. The heat dissipation unit 4 formed on the surface of the carrier substrate 2 and located on the same side as the light emitting unit 3 can effectively dissipate heat generated by the light emitting unit 3 during operation, thereby achieving better heat dissipation effect.
In summary, the led package structure with heat dissipation of the present invention utilizes atomic layer deposition to control the total thickness of the heat dissipation unit 4 to be not greater than 1 μm, and has good compactness and complete coverage. The thickness of the heat dissipation unit 4 is controlled to be extremely thin and has light transmittance, so that the heat dissipation unit can be positioned at the same side with the light emitting unit 3, and the heat generated by the light emitting unit 3 during operation can be dissipated outwards, so that the heat dissipation capability of the light emitting diode structure is improved, and the light emitting is not influenced, so that the purpose of the utility model can be really achieved.
Claims (8)
1. A light emitting diode packaging structure with high heat dissipation performance is characterized in that: comprises the following steps:
a carrier substrate;
the light-emitting units are arranged on the bearing substrate, each light-emitting unit is provided with a light-emitting epitaxial structure and an electrode group which is formed on the light-emitting epitaxial structure and used for being electrically connected with the light-emitting epitaxial structure; and
a heat dissipation unit covering at least part of the surface of the carrier substrate and located at the same side as the light emitting unit, wherein the heat dissipation unit is formed by atomic layer deposition
And the total thickness is not more than 1 μm.
2. The light emitting diode package structure with high heat dissipation capability as set forth in claim 1, wherein: the heat dissipation unit has light transmittance, covers the light emitting units and the surface of the bearing substrate exposed from the light emitting units, and exposes the electrode group of the light emitting units to the outside.
3. The light emitting diode package structure with high heat dissipation capability as set forth in claim 1, wherein: the heat dissipation unit is at least provided with a heat layer and a heat radiation layer, and the heat radiation layer is positioned at the outermost side and is exposed outwards.
4. The light emitting diode package structure with high heat dissipation capability as set forth in claim 3, wherein: the heat dissipation unit also has a dielectric insulation layer located at the innermost side of the heat dissipation unit.
5. The light emitting diode package structure with high heat dissipation capability as set forth in claim 1, wherein: the total thickness of the heat dissipation unit is between 0.1nm and 300 nm.
6. The light emitting diode package structure with high heat dissipation capability as set forth in claim 1, wherein: the bearing substrate is selected from an epitaxial substrate or a circuit board with a circuit structure.
7. The light emitting diode package structure with high heat dissipation capability as set forth in claim 1, wherein: the light-emitting diode packaging structure comprises a light-emitting unit, a bearing substrate and a circuit board, wherein the bearing substrate is selected from a light-permeable epitaxial substrate, the light-emitting diode packaging structure further comprises the circuit board, the circuit board is provided with a plurality of electric ports located on the surface, the circuit board is arranged on one side of the light-emitting unit opposite to the bearing substrate, and the electric ports are respectively and correspondingly connected to electrode groups of the light-emitting unit.
8. The light emitting diode package structure with high heat dissipation capability as set forth in claim 1, wherein: the light emitting unit is selected from a micro light emitting diode or a sub-millimeter light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123177189.6U CN216413084U (en) | 2021-12-16 | 2021-12-16 | Light emitting diode packaging structure with high heat dissipation performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123177189.6U CN216413084U (en) | 2021-12-16 | 2021-12-16 | Light emitting diode packaging structure with high heat dissipation performance |
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| Publication Number | Publication Date |
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| CN216413084U true CN216413084U (en) | 2022-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202123177189.6U Active CN216413084U (en) | 2021-12-16 | 2021-12-16 | Light emitting diode packaging structure with high heat dissipation performance |
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- 2021-12-16 CN CN202123177189.6U patent/CN216413084U/en active Active
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