CN216338069U - Fixing device for wafer film forming - Google Patents
Fixing device for wafer film forming Download PDFInfo
- Publication number
- CN216338069U CN216338069U CN202123025234.6U CN202123025234U CN216338069U CN 216338069 U CN216338069 U CN 216338069U CN 202123025234 U CN202123025234 U CN 202123025234U CN 216338069 U CN216338069 U CN 216338069U
- Authority
- CN
- China
- Prior art keywords
- wafer
- tray
- ring
- fixing
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model provides a fixing device for wafer film forming, which at least comprises: the tray is provided with at least one bulge; the top of the pressure ring is provided with a top groove for bearing the wafer; the pressing ring is sleeved on the outer side of the tray, and the inner wall of the top groove and the protrusion are in contact with the wafer. The fixing device for wafer film forming provided by the utility model can solve the problems of uneven thickness and concentration of the wafer after epitaxy and the problem of increase of cards and dropped objects caused by the silicon carbide deposition layer concentrated in one area.
Description
Technical Field
The utility model belongs to the technical field of semiconductor equipment, and particularly relates to a fixing device for wafer film forming.
Background
The Chemical Vapor Deposition (CVD) epitaxial system has become the main method for preparing silicon carbide (SiC) epitaxial films due to low temperature, easy control and good film uniformity. In the CVD process, a SiC wafer is placed on a wafer film forming fixing device, then the wafer film forming fixing device is placed in a reaction cavity, mixed gas of various source gases and carrier gases flows through the surface of the wafer and the fixing device at high temperature, and reaction products are continuously deposited and grown on the surface of the wafer. When the wafer is subjected to epitaxial growth, reactants are continuously deposited on the surface of the fixing device, the deposition thickness is higher and higher along with the increase of the number of growth furnaces, the quality of the SiC epitaxial wafer is reduced, and the process parameter adjustment is required to be continuously carried out, so that the production continuity is influenced. Moreover, the deposit is more and more, which limits the moving range of the wafer to cause the occurrence of the sticking phenomenon, resulting in the wafer breaking.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a fixing device for wafer film formation, which solves the problem of wafer fragmentation, can effectively improve the uniformity of the thickness and concentration of an epitaxial wafer, and can prevent silicon carbide deposition layers from concentrating in one area to increase cards and dropped objects.
In order to solve the technical problems, the utility model is realized by the following technical scheme:
the utility model provides a fixing device for wafer film forming, at least comprising:
the tray is provided with at least one bulge;
the top of the pressure ring is provided with a top groove for bearing the wafer;
the pressing ring is sleeved on the outer side of the tray, and the inner wall of the top groove and the protrusion are in contact with the wafer.
In one embodiment of the utility model, the tray is cylindrical and the press ring is circular.
In an embodiment of the utility model, a bottom groove is further formed in the bottom of the pressing ring, the bottom groove is circular, the inner diameter of the bottom groove is larger than the outer diameter of the tray, and the pressing ring is sleeved on the tray through the bottom groove.
In an embodiment of the utility model, the depth of the bottom groove is less than or equal to the height of the tray, and the tray has a supporting function on the pressure ring and the wafer.
In an embodiment of the utility model, the top of the pressure ring is further provided with a top groove, the top groove is circular, the depth of the top groove is greater than or equal to the thickness of the wafer, the top groove is provided with a notch, and the notch is matched with the shape of the protrusion.
In an embodiment of the utility model, the protrusion is columnar, the outer side of the protrusion is attached to the inner wall of the pressure ring, and the inner side of the protrusion is attached to the flat edge part of the wafer to fix the wafer.
According to the utility model, a certain margin is designed between the bulge on the bottom tray and the top pressure ring, so that air flow can be uniformly distributed in the whole pressure ring, the quality of the silicon carbide epitaxial wafer can be effectively improved, and the problem of breakage of cards and wafers caused by concentration of silicon carbide deposition layers in one area can be reduced.
Of course, it is not necessary for any product in which the utility model is practiced to achieve all of the above-described advantages at the same time. Furthermore, an apparatus according to the present invention may be a combination of a plurality of apparatuses, rather than a single isolated apparatus.
The present invention is not limited to the above-described embodiments, and various modifications and variations can be made without departing from the spirit and scope of the present invention.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a wafer film forming fixture.
FIG. 2 is a cross-sectional view of a wafer film forming fixture.
FIG. 3 is a top view of a wafer film forming fixture.
Figure 4 shows a bottom view of the pressure ring.
In the drawings, the components represented by the respective reference numerals are listed below:
1-tray
2-pressure ring
21-top groove
22-bottom groove
23-notch
3-convex
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Referring to fig. 1 and 2, fig. 1 is a schematic structural view of a wafer film forming fixture, and fig. 2 is a cross-sectional view of the wafer film forming fixture. The fixing device for wafer film formation can include: tray 1, clamping ring 2 and protrusion 3. In an embodiment, the tray 1, the pressing ring 2 and the protrusions 3 may be made of graphite, and the fixing device formed by the tray 1, the pressing ring 2 and the protrusions 3 may satisfy the conditions of excellent high temperature strength, high semiconductor-grade purity, high thermal conductivity, and approximate thermal expansion coefficient and dimensional precision of a wafer, and the graphite is a high temperature resistant, high purity, high thermal conductivity material, and may be made of graphite, and may be stably maintained without deformation even under a high temperature and high pressure environment.
Referring to fig. 1-2, in some embodiments, the tray 1 may be cylindrical, elliptical, rectangular, or rectangular. In one embodiment, the pressure ring 2 may be in the shape of a circular ring. In some embodiments, the pressing ring 2 may be sleeved on the tray 1, the pressing ring 2 may be located on the same central axis as the tray 1, and an inner wall of the pressing ring 2 may contact with an outer side of a circumference of the tray 1. Specifically, a bottom groove 22 can be opened at the bottom of the press ring 2, the bottom groove 22 can be circular, oval or rectangular, and the shape of the bottom groove 22 is matched with that of the tray 1. In an embodiment, the inner diameter of the bottom groove 22 may be larger than the outer diameter of the tray 1, the press ring 2 may be sleeved outside the circumference of the tray 1 through the bottom groove 22, and the bottom groove 22 and the tray 1 are located on the same central axis. In some embodiments, the depth of the bottom groove 22 may be less than the height of the tray 1, and may also be equal to the height of the tray 1. In one embodiment, the depth of the bottom groove 22 is smaller than the height of the tray 1, and the tray 1 plays a role of supporting the pressure ring 2 and the wafer. In another embodiment, the depth of the bottom groove 22 is equal to the height of the tray 1, and the press ring 2 can limit the movement of the protrusion 3 on the tray 1, so as to prevent the protrusion 3 from displacing and causing wafer breakage.
Referring to fig. 1-2, in an embodiment, a top recess 21 may be formed at the top of the pressing ring 2, and the top recess 21 may be circular. In one embodiment, the inner diameter of top groove 21 may be smaller than the inner diameter of bottom groove 22. In one embodiment, the depth of the top groove 21 may be greater than or equal to the thickness of the wafer, the inner diameter of the top groove 21 may be smaller than the diameter of the wafer, the wafer may be placed on the top groove 21, and the top groove 21 plays a role of bearing the wafer. In one embodiment, when the wafer is placed on the top groove 21, the bottom of the wafer is suspended, so that the wafer is prevented from being polluted by direct contact between the wafer and the tray. In one embodiment, the top recess 21 may be formed with a notch 23, and the shape of the notch 23 may be identical to the shape of the protrusion 3. The specific shape of the notch 23 is not limited, in some embodiments, the notch 23 may be an arc shape, the size of the angle corresponding to the arc-shaped notch 23 is not limited, and in some embodiments, the angle corresponding to the notch 23 may be 30-75 degrees.
Referring to fig. 1 to 4, fig. 3 is a top view of a fixing device for wafer film formation, wherein the left side is a top view of a tray 1 and a protrusion 3 on the tray 1, and the right side is a top view of a pressing ring 2. Referring to fig. 4, fig. 4 is a bottom view of the press ring. In one embodiment, the protrusion 3 may be cylindrical. In an embodiment, the pressing ring 2 can be sleeved outside the circumference of the tray 1 through the bottom groove 22, the protrusion 3 passes through the notch 23 on the top groove 21, the inner side of the protrusion 3 is a flat edge portion, the flat edge portion of the protrusion 3 can be attached to the flat edge of the wafer, the outer side of the protrusion 3 is an arc edge portion, and the outer arc edge portion of the protrusion 3 can be attached to the inner wall of the pressing ring 2. In an embodiment, the height of the protrusion 3 may be greater than the height of the wafer, and may be less than or equal to the height of the pressure ring 2.
Referring to fig. 2-4, in an embodiment, the flat edge portion of the protrusion 3 may also be extended inward to horizontally form an edge structure (not shown), the edge structure and the top groove 21 are located on the same horizontal line, the width of the edge structure is less than or equal to the distance between the inner wall of the top groove 21 and the outer wall of the pressure ring 2, the thickness of the edge structure is less than or equal to the distance between the top groove 21 and the bottom groove 22, and the edge structure plays a role of carrying a wafer. In one embodiment, the protrusions 3 can hold the wafer in the top recess 21, preventing the wafer from being thrown away when the wafer rotates with the bottom device in the reaction chamber. And a gap is formed between the protrusion 3 and the top groove 21, so that on one hand, airflow can pass through the gap, and the airflow can be uniformly distributed in the whole pressure ring 2, thereby ensuring the quality of the silicon carbide epitaxial layer; on the other hand, as the reaction time increases, the silicon carbide deposits on the surfaces of the pressure ring 2 and the wafer become thicker and thicker, the silicon carbide deposits fill the gap between the top groove 21 and the wafer, so that the wafer is difficult to separate from the pressure ring 2, furthermore, the deposits between the gaps can extrude the wafer to cause the wafer to be cracked, and if a gap is left between the protrusion 3 and the top groove 2, a certain moving space is left for the wafer, so that the occurrence of the clamping phenomenon is greatly reduced. Even the card phenomenon has appeared, also can take off clamping ring 2 from tray 1, have a breach 23 between wafer and the clamping ring 2, and the clearance between wafer and the clamping ring 2 will greatly increased, and then take out the wafer smoothly, can further increase accessory life and reduce the frequency of polishing.
In summary, the utility model provides a fixing device for wafer film formation, wherein a gap is formed between a protrusion on a tray and a pressure ring, so that on one hand, airflow can pass through the gap, and the airflow can be uniformly distributed in the whole pressure ring, thereby ensuring the quality of a silicon carbide epitaxial layer; on the other hand, a certain moving space is reserved for the wafer, so that the card clamping phenomenon is greatly reduced. The problem of cracking of the card and wafer due to the silicon carbide deposition layer concentrated in one area can also be reduced.
The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application.
Other technical features than those described in the specification are known to those skilled in the art, and are not described herein in detail in order to highlight the innovative features of the present invention.
Claims (10)
1. A wafer film forming fixture, comprising at least:
the tray is provided with at least one bulge;
the top of the pressure ring is provided with a top groove for bearing the wafer;
the pressing ring is sleeved on the outer side of the tray, and the inner wall of the top groove and the protrusion are in contact with the wafer.
2. The apparatus for fixing a film formed on a wafer according to claim 1,
the tray is cylindrical.
3. The apparatus for fixing a film formed on a wafer according to claim 1,
the clamping ring is circular.
4. The apparatus for fixing a film formed on a wafer according to claim 1,
the clamping ring is further provided with a bottom groove, the bottom groove is located at the bottom of the clamping ring, and the inner diameter of the bottom groove is larger than the outer diameter of the tray.
5. The apparatus for fixing a film formed on a wafer according to claim 4,
the compression ring is sleeved on the tray through the bottom groove.
6. The apparatus for fixing a film formed on a wafer according to claim 1,
the depth of the top groove is larger than or equal to the thickness of the wafer.
7. The apparatus for fixing a film formed on a wafer according to claim 1,
the top groove is provided with a notch, and the notch is matched with the bulge.
8. The apparatus for fixing a film formed on a wafer according to claim 1,
the height of the bulge is larger than that of the wafer and smaller than or equal to that of the pressure ring.
9. The apparatus for fixing a film formed on a wafer according to claim 1,
the bulge is columnar, the outer side of the bulge is attached to the inner wall of the pressing ring, and the inner side of the bulge is attached to the flat edge of the wafer to fix the wafer.
10. The apparatus for fixing a film formed on a wafer according to claim 1,
the tray, the protrusion and the press ring are made of graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123025234.6U CN216338069U (en) | 2021-11-30 | 2021-11-30 | Fixing device for wafer film forming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123025234.6U CN216338069U (en) | 2021-11-30 | 2021-11-30 | Fixing device for wafer film forming |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216338069U true CN216338069U (en) | 2022-04-19 |
Family
ID=81158367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123025234.6U Active CN216338069U (en) | 2021-11-30 | 2021-11-30 | Fixing device for wafer film forming |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216338069U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116497341A (en) * | 2023-05-12 | 2023-07-28 | 深圳市重投天科半导体有限公司 | Preheating device, epitaxial growth equipment and epitaxial method |
-
2021
- 2021-11-30 CN CN202123025234.6U patent/CN216338069U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116497341A (en) * | 2023-05-12 | 2023-07-28 | 深圳市重投天科半导体有限公司 | Preheating device, epitaxial growth equipment and epitaxial method |
| CN116497341B (en) * | 2023-05-12 | 2024-05-28 | 深圳市重投天科半导体有限公司 | Preheating device, epitaxial growth equipment and epitaxial method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10438795B2 (en) | Self-centering wafer carrier system for chemical vapor deposition | |
| EP0835336A1 (en) | A device and a method for epitaxially growing objects by cvd | |
| KR101897062B1 (en) | Silicon carbide epi wafer and method of fabricating the same | |
| KR101046068B1 (en) | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having same | |
| JP2009164162A (en) | Vapor growth device and growing method of single-crystal thin film | |
| CN216338069U (en) | Fixing device for wafer film forming | |
| EP0519608A1 (en) | Substrate holder of thermally anisotropic material used for enhancing uniformity of grown epitaxial layers | |
| CN109207962B (en) | Chemical vapor growth device | |
| JP4731076B2 (en) | Deposition method and deposition apparatus for depositing semiconductor film by CVD method | |
| US20200173023A1 (en) | SiC CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER | |
| US20110283944A1 (en) | Cvd apparatus | |
| JP2012216744A (en) | Vapor growth device and vapor growth method | |
| TW483053B (en) | Chemical vapor deposition apparatus and chemical vapor deposition process | |
| JP2015198213A (en) | Method of manufacturing epitaxial silicon carbide wafer, and holde for silicon carbide single cristal substrate used for the same | |
| JP2013026358A (en) | Shower plate and vapor phase growth apparatus | |
| JP5867913B2 (en) | Silicon carbide film CVD system | |
| CN216688313U (en) | Epitaxial thin film device of wafer | |
| JP2003086516A (en) | Susceptor, cvd unit, film-forming method and semiconductor device | |
| KR101926678B1 (en) | Silicon carbide epi wafer and method of fabricating the same | |
| CN103074673A (en) | Substrate supporting structure and deposition device | |
| WO2018158348A1 (en) | Substrate-carrier structure | |
| CN109825819A (en) | Graphite base | |
| KR101971613B1 (en) | Deposition apparatus | |
| JP7419704B2 (en) | chemical vapor deposition equipment | |
| JP3969484B2 (en) | Hot wall heating type chemical vapor deposition system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 315336 buildings 15 and 16, No. 68, Yuhai East Road, Hangzhou Bay New Area, Ningbo, Zhejiang Patentee after: CLC Semiconductor Co.,Ltd. Address before: Room 105-1, building 3, 290 Xingci 1st Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province, 315336 Patentee before: CLC Semiconductor Co.,Ltd. |