CN216273732U - High-efficiency burner for producing large-size quartz glass - Google Patents

Abstract

The utility model discloses a high-efficiency burner for producing large-size quartz glass, aiming at solving the problem that central materials can not fully react when large amount of materials are put into the existing burner, and the high-efficiency burner comprises: the device comprises a feeding assembly, a material protection gas assembly, an oxygen supply assembly, a hydrogen supply assembly and a protective gas assembly; the feeding assembly is provided with a straight tubular feeding through pipe, a through material conveying flow channel is arranged inside the feeding through pipe, the tail end of the material conveying flow channel is in a frustum shape with the inner diameter gradually reduced, the cone angle alpha of the frustum-shaped area is 2-30 degrees, and the height H is 3-20 mm. The utility model provides a high-efficiency burner for producing large-size quartz glass, which redesigns the tail end of a material conveying flow channel of an original feed through pipe into a frustum shape with gradually contracted diameter, so that a silicon tetrachloride gas-phase raw material forms focus at the outlet end of the feed through pipe, the condition of uneven distribution of the silicon tetrachloride gas-phase raw material is improved, and the silicon tetrachloride gas-phase raw material can be fully reacted.

Description

High-efficiency burner for producing large-size quartz glass

Technical Field

The utility model relates to the technical field of quartz glass ingot production tools, in particular to a high-efficiency burner for producing large-size quartz glass.

Background

The ultraviolet optical quartz glass corresponds to ZS brand ultraviolet optical quartz glass in quality standard JC/T185-2013 optical quartz glass and is prepared by adopting an oxyhydrogen flame hydrolysis silicon tetrachloride direct method (an application of a chemical vapor deposition CVD technology). The specific production process comprises the following steps: high-purity raw materials SiCl4 gas, hydrogen and oxygen are introduced into a deposition furnace through a burner, the hydrogen and the oxygen are combusted to generate water and a large amount of heat, the SiCl4 is hydrolyzed when meeting water, and the generated SiO2 crystalline particles are accumulated on a rotating target material and are directly melted into an amorphous state at high temperature to form a rod-shaped material, wherein the rod-shaped material is the synthetic fused quartz glass lump material.

For the manufacture of large-size ultraviolet optical quartz glass, two technologies are generally adopted at home and abroad: one is to deposit optical quartz glass lump material with small diameter by CVD process and then to prepare large-size optical quartz glass product by two-step tank deposition process. The other is directly prepared into large-size optical quartz glass by a CVD method, and is directly deposited by a plurality of burners, which is different from the first method.

The burner is used as an important process part required by combustion reaction in the CVD method deposition process, and is particularly critical in the production process of the synthetic quartz glass.

The traditional burner takes the material as the center to output vertically, and the hydrogen and the oxygen are output around the tube ring at intervals. When a large amount of the central material is fed, the material line is bright at the edge and is deficient in the middle, and the reaction cannot be fully performed. On the other hand, the temperature of the deposition area is reduced due to the excessive material amount, so that the deposition surface is difficult to form, and the preparation of large-size ultraviolet optical quartz glass cannot be directly realized.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the problem that central materials cannot fully react when large amount of materials are fed in the existing burner, and provides a high-efficiency burner for producing large-size quartz glass.

The technical scheme adopted by the utility model is as follows:

a high efficiency burner for producing large size quartz glass comprising:

the feeding assembly is provided with a straight tubular feeding through pipe, a through material conveying channel is arranged inside the feeding through pipe, the tail end of the material conveying channel is in a frustum shape with the inner diameter gradually reduced, the cone angle alpha of a frustum-shaped area is 2-30 degrees, and the height H is 3-20 mm;

the material protection gas component is arranged on the outer side of the feeding through pipe;

the oxygen supply assembly is arranged outside the material protection gas assembly;

the hydrogen supply assembly is arranged outside the oxygen supply assembly;

and

the protective gas assembly is arranged outside the hydrogen supply assembly;

wherein the feeding component introduces a silicon tetrachloride gas-phase raw material to form a linear material zone; the material protection gas component introduces oxygen to form an annular material protection gas air curtain and covers the linear material zone into the annular material protection gas air curtain; the oxygen supply assembly introduces oxygen to form a plurality of annular oxygen air curtains arranged in a concentric circle manner, and the annular protective material air curtain is covered to the innermost side; the hydrogen supply assembly introduces hydrogen to form an annular hydrogen air curtain and covers the annular oxygen air curtain, the annular protective material air curtain and the linear material area; the protective gas component introduces protective gas to form an annular protective gas air curtain and cover the annular hydrogen air curtain into the annular protective gas air curtain.

Further, the feed assembly further comprises:

the feeding buffer cavity is connected with the inlet end of the feeding through pipe;

and

the feed pipe is connected with the feeding buffer cavity.

Further, the outlet end discharge direction of the feed pipe is not overlapped with the axial center direction of the feed through pipe.

Further, the whole tail end of the feed through pipe is processed into a bell mouth shape with gradually contracted diameter.

Further, the guard gas assembly includes:

the two ends of the inner ring through pipe are communicated, and the inner ring through pipe is positioned on the outer side of the feeding through pipe and is arranged in a concentric circle structure with the feeding through pipe;

the inner ring buffer cavity is wrapped on the outer side of the feeding through pipe and is connected with the inlet end of the inner ring through pipe;

and

and the inner ring pipe is connected with the inner ring buffer cavity.

Further, the oxygen supply assembly includes:

the first epoxy chamber pipe is positioned outside the inner annular through pipe and is arranged in a concentric circle structure mode with the inner annular through pipe;

the first epoxy buffer cavity is wrapped outside the inner annular through pipe and is connected with the inlet end of the first epoxy chamber pipe;

a first oxygen pipe connected with the first epoxy buffer cavity;

the first oxygen through pipes are circumferentially arranged by taking the axial center of the feeding through pipe as a central shaft, and the inlet ends of the first oxygen through pipes are connected with the first epoxy chamber pipe;

the second epoxy chamber pipe is positioned outside the first epoxy chamber pipe and is arranged in a concentric circle structure mode with the first epoxy chamber pipe;

the second epoxy buffer cavity is wrapped outside the first epoxy chamber pipe and is connected with the inlet end of the first epoxy chamber pipe;

a second oxygen pipe connected with the second epoxy buffer cavity;

and

the second oxygen through pipes are circumferentially arranged by taking the axial center of the feeding through pipe as a central shaft, and the inlet ends of the second oxygen through pipes are connected with a second epoxy chamber pipe; the circle formed by the second oxygen through pipe is positioned outside the circle formed by the first oxygen through pipe.

Further, the hydrogen supply assembly includes:

the hydrogen chamber pipe is positioned outside the second epoxy chamber pipe and is arranged in a concentric circle structure mode with the second epoxy chamber pipe;

the hydrogen buffer cavity is wrapped and arranged on the outer side of the second epoxy chamber pipe and is connected with the inlet end of the hydrogen chamber pipe;

and

and the outlet end of the hydrogen pipe is connected with the hydrogen buffer cavity.

Further, the shielding gas assembly includes:

the outer ring through pipe is positioned on the outer side of the hydrogen chamber pipe and is arranged in a concentric circle structure with the hydrogen chamber pipe;

the outer ring buffer cavity is wrapped outside the hydrogen chamber pipe and is connected with the inlet end of the outer ring through pipe;

and

and the outlet end of the outer ring pipe is connected with the outer ring buffer cavity.

Further, the oxygen supply assembly still includes:

a third epoxy chamber pipe with an open inlet end and a closed outlet end, wherein the third epoxy chamber pipe is positioned between the second epoxy chamber pipe and the hydrogen chamber pipe and is arranged in a concentric circle structure with the second epoxy chamber pipe;

the third epoxy buffer cavity is wrapped outside the second epoxy chamber pipe and is connected with the inlet end of the third epoxy chamber pipe;

the third oxygen pipe is connected with the third epoxy buffer cavity;

the third oxygen through pipes are circumferentially arranged by taking the axial center of the feeding through pipe as a central shaft, and the inlet ends of the third oxygen through pipes are connected with a third epoxy chamber pipe; and a circle formed by the third oxygen through pipe in a closed mode is positioned on the outer side of a circle formed by the second oxygen through pipe in a closed mode.

Further, the end surfaces of the feed through pipe, the inner annular pipe, the first epoxy through pipe, the second epoxy through pipe, the third epoxy through pipe, the hydrogen chamber pipe and the outer annular pipe are flush;

or the closed ends of the first epoxy chamber pipe, the second epoxy chamber pipe and the third epoxy chamber pipe are superposed and positioned at the inlet end of the hydrogen chamber pipe;

or, the feeding buffer cavity, the inner ring buffer cavity, the first oxygen buffer cavity, the second oxygen buffer cavity, the third oxygen buffer cavity, the hydrogen buffer cavity and the outer ring buffer cavity are sequentially connected into a whole in a shape of a sugarcoated haw.

The utility model has the beneficial effects that:

the utility model provides a high-efficiency burner for producing large-size quartz glass, aiming at solving the problem that central materials cannot fully react when large amount of materials are put into the existing burner. The combustor comprises a feeding assembly, a material protection gas assembly, an oxygen supply assembly, a hydrogen supply assembly and a protection gas assembly. In the burner, the tail end of a material conveying flow channel of an original feeding through pipe is redesigned to be in a frustum shape with gradually contracted diameter, the cone angle alpha of the frustum-shaped area is 2-30 degrees, and the height H is 3-20 mm. Through the design, the silicon tetrachloride gas-phase raw material is focused at the outlet end of the feeding through pipe, the condition that the silicon tetrachloride gas-phase raw material is not uniformly distributed is improved, and the silicon tetrachloride gas-phase raw material can be fully reacted.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a schematic view of a burner according to example 1.

FIG. 2 is a schematic view of the structure of a burner according to example 2.

FIG. 3 is a schematic view of the arrangement of the gas outlet of the burner in example 2.

FIG. 4 is a sectional structural view of the burner of example 2, taken along the radial direction of the gas outlet of the burner.

Fig. 5 is a partially enlarged view of the portion B in fig. 4.

Detailed Description

In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the utility model.

The following disclosure provides many different embodiments or examples for implementing different features of the utility model. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention.

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

The burner is used as an important process part required by combustion reaction in the CVD method deposition process, and is particularly critical in the production process of the synthetic quartz glass. The traditional burner uses material as center to output vertically and hydrogen and oxygen are uniformly distributed around the tube ring at intervals. When a large amount of the central material is fed, the material line is bright at the edge and is deficient in the middle, and the reaction cannot be fully performed. On the other hand, the temperature of the deposition area is reduced due to the excessive material amount, so that the deposition surface is difficult to form, and the preparation of large-size ultraviolet optical quartz glass cannot be directly realized.

In order to solve the problem that the central material cannot fully react when a large amount of central material is fed into the existing burner, the embodiment provides a high-efficiency burner for producing large-size quartz glass, as shown in fig. 1. The burner includes a feed assembly 100, a sheath gas assembly 200, an oxygen supply assembly 300, a hydrogen supply assembly 400, and a shielding gas assembly 500.

Wherein, the feeding assembly 100 is used for introducing a silicon tetrachloride gas phase raw material to form a linear material zone. The shroud gas assembly 200 is adapted to introduce oxygen to form an annular shroud gas curtain. The linear material area is positioned in the central area of the annular protective air curtain. The oxygen supply assembly 300 is adapted to introduce oxygen to form a plurality of annular oxygen curtains arranged in concentric circles. The plurality of annular oxygen air curtains are positioned outside the annular shield air curtain and are concentric therewith. The hydrogen supply assembly 400 is used to introduce hydrogen to form an annular hydrogen curtain. The annular hydrogen air curtain covers a plurality of annular oxygen air curtains, annular material protecting air curtains and linear material areas. The shielding gas assembly 500 is used for introducing shielding gas to form an annular shielding gas curtain, and the annular shielding gas curtain is located outside the annular hydrogen gas curtain and covers the annular hydrogen gas curtain therein.

Specifically, the feeding assembly 100, which is fed with a silicon tetrachloride gas-phase raw material, includes a feeding pipe 110, a feeding buffer chamber 120 and a feeding pipe 130.

The feed pipe 130 is a straight pipe, and a feed passage 131 is formed therein. The end of the material delivery channel 131 is in the shape of a frustum with a gradually decreasing inner diameter. The cone angle alpha of the frustum-shaped area is 2-30 degrees, and the height H is 3-20 mm. Compared with the existing feeding through pipe, the tail end of the material conveying flow channel 131 is processed into a frustum shape with the inner diameter gradually reduced, so that the center focusing is formed, the condition that the silicon tetrachloride gas phase raw material is not uniformly distributed is improved, and the full reaction is realized.

In one embodiment of the present application, in order to reduce the difficulty of processing the end of the material conveying channel 131, the end of the material inlet pipe 130 is integrally processed into a bell mouth shape with a gradually shrinking diameter.

And a closed feed buffer chamber 120 connected to the inlet end of the feed pipe 130. The inner region of the feed buffer chamber 120 communicates with the feed passage 131. The silicon tetrachloride gas phase raw material enters the feeding buffer chamber 120 to be mixed and temporarily stored, and then flows along the material conveying flow channel 131 to be sprayed out.

A feed line 110, the outlet end of which is connected to the feed buffer chamber 120 and communicates with the interior region of the feed buffer chamber 120. The number of the feed pipes 110 is one or more, and the feed amount can be increased when there are more feed pipes. In this embodiment, a single feeding pipe 110 is exemplified.

In one embodiment of the present application, in order to improve the uniform mixing degree of the silicon tetrachloride gas-phase raw material in the feeding buffer chamber 120, the discharging direction of the outlet end of the feeding pipe 110 does not coincide with the axial center direction of the feeding through pipe 130, for example, the end of the feeding pipe 110 is connected to the side of the feeding buffer chamber 120. The silicon tetrachloride gas phase raw material enters the feeding buffer chamber 120 to form turbulent flow, the uniformity of the turbulent flow is improved, and then the silicon tetrachloride gas phase raw material enters the feeding through pipe 130.

The material protection gas component 200 is filled with oxygen and comprises an inner ring pipe 210, an inner ring buffer cavity 220 and an inner ring pipe 230.

An inner annular tube 230 having a straight tube shape and both ends penetrating. The inner ring-shaped duct 230 is located outside the feed-through duct 130 and is arranged in a concentric structure with the feed-through duct 130. The outlet end of the inner annular tube 230 is flush with the outlet end of the feed-through tube 130. The annular gap between the inner wall of the inner annular tube 230 and the feed tube 130 is a guard gas flow channel. The protective gas passes through the protective gas flow channel and forms an annular protective gas air curtain when being sprayed out, so that the silicon tetrachloride gas-phase raw material is prevented from reaching the reaction temperature at the outlet at the tail end of the feeding through pipe 130 and being hydrolyzed in advance.

And a closed inner ring buffer chamber 220, which is wrapped around the outer side of the feed through pipe 130 and connected with the inlet end of the inner ring through pipe 230. The inner area of the inner ring buffer chamber 220 is communicated with the material protection air flow channel 231.

And an inner ring pipe 210 having an outlet end connected to the inner ring buffer chamber 220 and communicating with an inner region of the inner ring buffer chamber 220. The number of the inner pipes 210 is one or more, and the amount of intake air can be increased. An inner collar 210 is illustrated in this embodiment.

The oxygen supply assembly 300 is supplied with oxygen and comprises a first oxygen buffer chamber 310, a first epoxy chamber tube 320, a first oxygen tube 330, a second oxygen buffer chamber 340, a second epoxy chamber tube 350 and a second oxygen tube 360.

The first epoxy chamber tube 320 is a straight tube with an open inlet end and a closed outlet end. The first epoxy chamber pipe 320 is located outside the inner through pipe 230 and is arranged in a concentric circle structure with the inner through pipe 230. Outside the closed end of the first epoxy chamber pipe 320, a plurality of first oxygen through pipes 321 are uniformly arranged in a circumferential manner with the axial center of the feed through pipe 130 as a central axis. In the present embodiment, 6 first oxygen pipes 321 are exemplified for explanation. One end of the first oxygen through pipe 321 is connected to the closed end of the first epoxy chamber pipe 320, and the two are internally communicated. The other end of the first oxygen duct 321 extends to the end of the feed duct 130, and the two end faces are flush. Oxygen is sprayed out from the 6 first oxygen through pipes 321 to form an annular oxygen air curtain in a surrounding manner.

And a first oxygen buffer chamber 310 which is wrapped and arranged outside the inner circulation pipe 230 and is connected with the inlet end of the first epoxy chamber pipe 320, and the first oxygen buffer chamber and the first epoxy chamber pipe are communicated with each other. After the first oxygen buffer cavity 310 is connected with the first epoxy chamber pipe 320, the buffer space of the first oxygen buffer cavity 310 is increased, which is beneficial to improving the oxygen supply stability.

The outlet end of the first oxygen pipe 330 is connected to the first oxygen buffer chamber 310 and communicates with the inner region of the first oxygen buffer chamber 310. The number of the first oxygen pipes 330 is one or more, and the amount of intake air can be increased when there are more. In this embodiment, a single first oxygen pipe 330 is exemplified.

A second epoxy chamber tube 350, which is straight and open at the inlet end and closed at the outlet end. The second epoxy chamber tube 350 is located outside the first epoxy chamber tube 320 and is arranged in a concentric circular configuration with the first epoxy chamber tube 320. Outside the closed end of the second epoxy chamber pipe 350, a plurality of second oxygen pipes 351 are uniformly arranged in a circumferential manner to penetrate through the axial center of the feed pipe 130. The circle formed by the second oxygen duct 351 is located outside the circle formed by the first oxygen duct 321. In this embodiment, 12 second oxygen pipes 351 are exemplified for explanation. One end of the second oxygen pipe 351 is connected to the closed end of the second epoxy chamber pipe 350, and both are internally communicated. The other end of the second oxygen pipe 351 extends to the end of the feed pipe 130, and the end surfaces of the two are flush. The oxygen is sprayed out from the 12 second oxygen pipes 351 to form another annular oxygen air curtain in a surrounding manner. The annular oxygen curtain is located outside the annular oxygen curtain formed by the spraying of the 6 first oxygen through pipes 321.

And a closed second oxygen buffer chamber 340, which is wrapped outside the first epoxy chamber pipe 320 and connected with the inlet end of the second epoxy chamber pipe 350, and the two are communicated with each other. After the second oxygen buffer cavity 340 is connected with the first epoxy chamber tube 320, the buffer space of the second oxygen buffer cavity 340 is increased, which is beneficial to improving the stability of oxygen supply.

And the outlet end of the second oxygen pipe 360 is connected with the second oxygen buffering cavity 350 and is communicated with the inner area of the second oxygen buffering cavity 350. The number of the second oxygen pipes 360 is one or more, and the amount of intake air can be increased when there are more. In this embodiment, one second oxygen pipe 360 is exemplified.

The hydrogen supply assembly 400, into which hydrogen gas is introduced, includes a hydrogen buffer chamber 410, a hydrogen chamber tube 420, and a hydrogen tube 430.

And a hydrogen chamber tube 420 having a straight tube shape and opened at both ends. The hydrogen chamber tube 420 is located outside the second epoxy chamber tube 350 and is arranged in a concentric circular configuration with the second epoxy chamber tube 350. The outlet end of the hydrogen chamber pipe 420 extends to the end of the feed through pipe 130, and the end surfaces of the two are flush. That is, the hydrogen chamber pipe 420 houses the first oxygen gas duct 321 and the second oxygen gas duct 351 therein. The annular gap between the inner wall of the hydrogen chamber tube 420 and the closed end of the second epoxy chamber tube 350 is a hydrogen flow port. The hydrogen is sprayed out from the hydrogen flow passage to form an annular hydrogen air curtain. The hydrogen and the oxygen are in contact reaction, water and a high-temperature reaction surface are generated by combustion, the silicon tetrachloride is hydrolyzed when meeting water at high temperature, the generated nano silicon dioxide is deposited on a rotating target material, and the nano silicon dioxide is directly melted into an amorphous fused quartz glass lump material at high temperature.

And a closed hydrogen buffer chamber 410 which is wrapped around the outside of the second epoxy chamber pipe 350 and connected to the inlet end of the hydrogen chamber pipe, and which is internally communicated.

The outlet end of the hydrogen pipe 430 is connected to the hydrogen buffer chamber 410 and is communicated with the inner region of the hydrogen buffer chamber 410. The number of the hydrogen pipes 430 is one or more, and the amount of intake air can be increased when there are more than one pipes. In this embodiment, a hydrogen pipe 430 is illustrated as an example.

The shielding gas assembly 500, which is filled with oxygen or inert gas, includes an outer ring buffer chamber 510, an outer ring through pipe 520, and an outer ring through pipe 530.

The outer annular tube 520 is a straight tube with two open ends. The outer circulation pipe 510 is located outside the hydrogen chamber pipe 420 and is arranged in a concentric structure with the hydrogen chamber pipe 420. The outlet end of the outer through-tube 520 is flush with the outlet end of the feed through-tube 130. The annular gap between the inner wall of the outer annular tube 520 and the hydrogen chamber tube 420 is a shielding gas flow passage. The protective gas passes through the protective gas flow channel and forms an annular protective gas air curtain when being sprayed out, so that the hydrogen and the oxygen are restrained and prevented from escaping. Meanwhile, the protective gas can cool the outer annular tube 520 to prevent high-temperature melting and material bonding.

And an outer ring buffer chamber 510 which is wrapped outside the hydrogen chamber pipe 420 and connected with the inlet end of the outer ring through pipe 520, and the two are communicated with each other.

An outer ring pipe 530, an outlet end of which is connected to the outer ring cushion chamber 510, communicates with an inner region of the outer ring cushion chamber 510. The number of the third oxygen pipes 390 is one or more, and the number of the third oxygen pipes can be increased. In this embodiment, a third oxygen tube 390 is illustrated as an example.

In one embodiment of the present application, in order to simplify the structure and improve the structural stability, the inner ring buffer chamber 220 is located outside the inlet end of the feed pipe 130, and the outer wall thereof is connected to the feed buffer chamber 120. The first oxygen buffer chamber 310 is located outside the inlet end of the inner annular tube 230, and the outer wall of the first oxygen buffer chamber is connected with the outer wall of the inner annular buffer chamber 220. The second oxygen buffer chamber 340 is located outside the inlet end of the second oxygen chamber tube 350, and the outer wall thereof is connected to the outer wall of the first oxygen buffer chamber 310. The closed end of the first epoxy chamber tube 320 and the closed end of the second epoxy chamber tube 350 coincide. The hydrogen buffer chamber 410 is disposed outside the inlet end of the second epoxy chamber pipe 350, and the outer wall thereof is connected to the outer wall of the second oxygen buffer chamber 340. The inner ring buffer chamber 220 is located outside the inlet end of the feed-through pipe 130, and its outer wall is connected to the outer wall of the feed buffer chamber 120. The outer ring buffer chamber 510 is disposed outside the inlet end of the hydrogen chamber pipe 420, and the outer walls thereof are connected to the hydrogen buffer chambers 410, respectively. The above connection structure allows the feeding buffer chamber 120, the inner ring buffer chamber 220, the first oxygen buffer chamber 310, the second oxygen buffer chamber 340, the hydrogen buffer chamber 410 and the outer ring buffer chamber 510 to be sequentially connected as a sugarcoated haw-shaped whole, and the inner regions thereof are independent from each other.

When the combustor in this implementation works:

the silicon tetrachloride gaseous raw material is fed from the feeding pipe 110 into the feeding buffer chamber 120 and then flows along the feeding passage 131. The tail end of the material conveying flow channel 131 is in a frustum shape with the inner diameter gradually reduced to form focusing, so that the condition that the silicon tetrachloride gas phase raw material is not uniformly distributed is improved. The protective gas is filled into the inner ring buffer cavity 220 from the inner ring pipe 210, and the inner ring through pipe 230 is sprayed out to form an annular protective gas air curtain, so that the silicon tetrachloride gaseous raw material is prevented from being hydrolyzed at the outlet of the feeding through pipe 130, and the feeding through pipe 130 is prevented from being blocked due to material accumulation. Oxygen is injected into the first oxygen buffer chamber 310 and the second oxygen buffer chamber 340 from the first oxygen pipe 330 and the second oxygen pipe 360 and is sprayed out from the first oxygen through pipe 351 and the second oxygen through pipe 381, and two annular oxygen air curtains are formed. The hydrogen is sprayed out from the hydrogen flow passage to form an annular hydrogen air curtain. The hydrogen and the oxygen are in contact reaction, water and a high-temperature reaction surface are generated by combustion, the silicon tetrachloride is hydrolyzed when meeting water at high temperature, the generated nano silicon dioxide is deposited on a rotating target material, and the nano silicon dioxide is directly melted into an amorphous fused quartz glass lump material at high temperature. The protective gas passes through the protective gas flow channel and forms an annular protective gas air curtain when being sprayed out, so that the hydrogen and the oxygen are restrained and prevented from escaping. Meanwhile, the protective gas can cool the outer annular tube 520 to prevent high-temperature melting and material bonding.

Example 2

A high efficiency burner for producing sized quartz glass is disclosed, as shown in figures 2-5. The burner includes a feed assembly 100, a sheath gas assembly 200, an oxygen supply assembly 300, a hydrogen supply assembly 400, and a shielding gas assembly 500.

Wherein, the feeding assembly 100 is used for introducing a silicon tetrachloride gas phase raw material to form a linear material zone. The shroud gas assembly 200 is adapted to introduce oxygen to form an annular shroud gas curtain. The linear material area is positioned in the central area of the annular protective air curtain. The oxygen supply assembly 300 is adapted to introduce oxygen to form a plurality of annular oxygen curtains arranged in concentric circles. The plurality of annular oxygen air curtains are positioned outside the annular shield air curtain and are concentric therewith. The hydrogen supply assembly 400 is used to introduce hydrogen to form an annular hydrogen curtain. The annular hydrogen air curtain covers a plurality of annular oxygen air curtains, annular material protecting air curtains and linear material areas. The shielding gas assembly 500 is used for introducing shielding gas to form an annular shielding gas curtain, and the annular shielding gas curtain is located outside the annular hydrogen gas curtain and covers the annular hydrogen gas curtain therein.

Specifically, the feeding assembly 100, which is fed with a silicon tetrachloride gas-phase raw material, includes a feeding pipe 110, a feeding buffer chamber 120 and a feeding pipe 130.

The feed pipe 130 is a straight pipe, and a feed passage 131 is formed therein. The end of the material delivery channel 131 is in the shape of a frustum with a gradually decreasing inner diameter. The cone angle alpha of the frustum-shaped area is 2-30 degrees, and the height H is 3-20 mm. Compared with the existing feeding through pipe, the tail end of the feeding runner 131 is processed into a frustum shape with the inner diameter gradually reduced, so that center focusing is formed, namely, the silicon tetrachloride gas-phase raw material is concentrated towards the center, the condition that the silicon tetrachloride gas-phase raw material is not uniformly distributed is improved, and sufficient reaction is realized.

In one embodiment of the present application, in order to reduce the difficulty of processing the end of the material conveying channel 131, the end of the material inlet pipe 130 is integrally processed into a bell mouth shape with a gradually shrinking diameter.

And a closed feed buffer chamber 120 connected to the inlet end of the feed pipe 130. The inner region of the feed buffer chamber 120 communicates with the feed passage 131. The silicon tetrachloride gas phase raw material enters the feeding buffer chamber 120 to be mixed and temporarily stored, and then flows along the material conveying flow channel 131 to be sprayed out.

A feed line 110, the outlet end of which is connected to the feed buffer chamber 120 and communicates with the interior region of the feed buffer chamber 120. The number of the feed pipes 110 is one or more, and the feed amount can be increased when there are more feed pipes. In this embodiment, a single feeding pipe 110 is exemplified.

In one embodiment of the present application, in order to improve the uniform mixing degree of the silicon tetrachloride gas-phase raw material in the feeding buffer chamber 120, the discharging direction of the outlet end of the feeding pipe 110 does not coincide with the axial center direction of the feeding through pipe 130, for example, the end of the feeding pipe 110 is connected to the side of the feeding buffer chamber 120. The silicon tetrachloride gas phase raw material enters the feeding buffer chamber 120 to form turbulent flow, the uniformity of the turbulent flow is improved, and then the silicon tetrachloride gas phase raw material enters the feeding through pipe 130.

The material protection gas component 200 is filled with oxygen and comprises an inner ring pipe 210, an inner ring buffer cavity 220 and an inner ring pipe 230.

The inner circular pipe 230 is a straight pipe, is located outside the feed pipe 130, and is concentrically arranged with the feed pipe 130. The outlet end of the inner annular tube 230 is flush with the outlet end of the feed-through tube 130. The annular gap between the inner wall of the inner annular tube 230 and the feed tube 130 is a guard gas flow channel. The protective gas passes through the protective gas flow channel and forms an annular protective gas air curtain when being sprayed out, so that the silicon tetrachloride gas-phase raw material is prevented from reaching the reaction temperature at the outlet at the tail end of the feeding through pipe 130 and being hydrolyzed in advance.

And a closed inner ring buffer chamber 220, which is wrapped around the outer side of the feed through pipe 130 and connected with the inlet end of the inner ring through pipe 230. The inner area of the inner ring buffer chamber 220 is communicated with the material protection air flow channel 231.

And an inner ring pipe 210 having an outlet end connected to the inner ring buffer chamber 220 and communicating with an inner region of the inner ring buffer chamber 220. The number of the inner pipes 210 is one or more, and the amount of intake air can be increased. An inner collar 210 is illustrated in this embodiment.

The oxygen supply assembly 300 is supplied with oxygen, and includes a first oxygen buffer chamber 310, a first epoxy chamber tube 320, a first oxygen tube 330, a second oxygen buffer chamber 340, a second epoxy chamber tube 350, a second oxygen tube 360, a third oxygen buffer chamber 370, a third epoxy chamber tube 380, and a third oxygen tube 390.

The first epoxy chamber tube 320 is a straight tube with an open inlet end and a closed outlet end. The first epoxy chamber pipe 320 is located outside the inner through pipe 230 and is arranged in a concentric circle structure with the inner through pipe 230. Outside the closed end of the first epoxy chamber pipe 320, a plurality of first oxygen through pipes 321 are uniformly arranged in a circumferential manner with the axial center of the feed through pipe 130 as a central axis. In the present embodiment, 6 first oxygen pipes 321 are exemplified for explanation. One end of the first oxygen through pipe 321 is connected to the closed end of the first epoxy chamber pipe 320, and the two are internally communicated. The other end of the first oxygen duct 321 extends to the end of the feed duct 130, and the two end faces are flush. Oxygen is sprayed out from the 6 first oxygen through pipes 321 to form an annular oxygen air curtain in a surrounding manner.

And a first oxygen buffer chamber 310 which is wrapped and arranged outside the inner circulation pipe 230 and is connected with the inlet end of the first epoxy chamber pipe 320, and the first oxygen buffer chamber and the first epoxy chamber pipe are communicated with each other.

And a first oxygen pipe 330 having an outlet end connected to the first oxygen buffer chamber 310 and communicating with an inner region of the first oxygen buffer chamber 310. The number of the first oxygen pipes 330 is one or more, and the amount of intake air can be increased when there are more. In this embodiment, a single first oxygen pipe 330 is exemplified.

A second epoxy chamber tube 350, which is straight and open at the inlet end and closed at the outlet end. The second epoxy chamber tube 350 is located outside the first epoxy chamber tube 320 and is arranged in a concentric circular configuration with the first epoxy chamber tube 320. Outside the closed end of the second epoxy chamber pipe 350, a plurality of second oxygen pipes 351 are uniformly arranged in a circumferential manner to penetrate through the axial center of the feed pipe 130. The circle formed by the second oxygen duct 351 is located outside the circle formed by the first oxygen duct 321. In this embodiment, 12 second oxygen pipes 351 are exemplified for explanation. One end of the second oxygen pipe 351 is connected to the closed end of the second epoxy chamber pipe 350, and both are internally communicated. The other end of the second oxygen pipe 351 extends to the end of the feed pipe 130, and the end surfaces of the two are flush. The oxygen is sprayed out from the 12 second oxygen pipes 351 to form another annular oxygen air curtain in a surrounding manner. The annular oxygen air curtain is positioned outside the annular oxygen air curtain formed by the oxygen sprayed from the 6 first oxygen through pipes 321.

And a second oxygen buffer chamber 340 which is wrapped and arranged outside the first epoxy chamber pipe 320 and is connected with the inlet end of the second epoxy chamber pipe 350, and the two are communicated with each other.

And the outlet end of the second oxygen pipe 360 is connected with the second oxygen buffering cavity 350 and is communicated with the inner area of the second oxygen buffering cavity 350. The number of the second oxygen pipes 360 is one or more, and the amount of intake air can be increased when there are more. In this embodiment, one second oxygen pipe 360 is exemplified.

The third epoxy chamber tube 380 is straight, with an open inlet end and a closed outlet end. The third epoxy chamber pipe 380 is wrapped between the outside of the second epoxy chamber pipe 350 and the hydrogen chamber pipe 420, and is arranged concentrically with the first epoxy chamber pipe 320. Outside the closed end of the third epoxy chamber pipe 380, a plurality of third oxygen through pipes 381 are uniformly arranged in a circumferential manner with the axial center of the feed through pipe 130 as a central axis. The circle formed by the third oxygen through pipe 381 is located outside the circle formed by the second oxygen through pipe 351. In this embodiment, 18 third oxygen ducts 381 are exemplified for explanation. One end of the third oxygen through pipe 381 is connected to the closed end of the third epoxy chamber pipe 380, and the two are communicated with each other. The other end of the third oxygen duct 381 extends to the end of the feed duct 130, and the end surfaces of the third oxygen duct 381 and the end surfaces of the feed duct are flush. The oxygen is sprayed from the 18 third oxygen pipes 381 to form another annular oxygen curtain. The annular oxygen curtain is located outside the annular oxygen curtain formed by the spraying of the 12 second oxygen pipes 351. Through addding third epoxy chamber pipe 380 and third oxygen siphunculus 381, increased the abundant of the burning of the oxyhydrogen of reaction face, improved reaction temperature, solved a large amount of material and dropped into the back, the shaping face that the reaction temperature is low to lead to can not the fashioned problem.

And a third oxygen buffer chamber 370 which is wrapped outside the second epoxy chamber pipe 350 and connected with the inlet end of the third epoxy chamber pipe 380, and the inside of which is communicated.

And a third oxygen pipe 390 having an outlet end connected to the third oxygen buffer chamber 370 and communicating with an inner region of the third oxygen buffer chamber 370. The number of the third oxygen pipes 390 is one or more, and the number of the third oxygen pipes can be increased. In this embodiment, a third oxygen tube 390 is illustrated as an example.

The hydrogen supply assembly 400, into which hydrogen gas is introduced, includes a hydrogen buffer chamber 410, a hydrogen chamber tube 420, and a hydrogen tube 430.

The hydrogen chamber pipe 420 is a straight pipe with two open ends, is located outside the second epoxy chamber pipe 350, and is arranged concentrically with the second epoxy chamber pipe 350. The outlet end of the hydrogen chamber pipe 420 extends to the end of the feed through pipe 130, and the end surfaces of the two are flush. That is, the hydrogen chamber pipe 420 covers the first oxygen gas pipe 321, the second oxygen gas pipe 351, and the third oxygen gas pipe 381 therein. The annular gap between the inner wall of the hydrogen chamber pipe 420 and the closed end of the third epoxy chamber pipe 380 is a hydrogen flow port. The hydrogen is sprayed out from the hydrogen flow passage to form an annular hydrogen air curtain. The hydrogen and the oxygen are in contact reaction, water and a high-temperature reaction surface are generated by combustion, the silicon tetrachloride is hydrolyzed when meeting water at high temperature, the generated nano silicon dioxide is deposited on a rotating target material, and the nano silicon dioxide is directly melted into an amorphous fused quartz glass lump material at high temperature.

And the hydrogen buffer cavity 410 is wrapped outside the third epoxy chamber pipe 350 and connected with the inlet end of the hydrogen chamber pipe 4, and the hydrogen buffer cavity and the hydrogen chamber pipe are communicated with each other.

The outlet end of the hydrogen pipe 430 is connected to the hydrogen buffer chamber 410 and is communicated with the inner region of the hydrogen buffer chamber 410. The number of the hydrogen pipes 430 is one or more, and the amount of intake air can be increased when there are more than one pipes. In this embodiment, a hydrogen pipe 430 is illustrated as an example.

The shielding gas assembly 500, which is filled with oxygen or inert gas, includes an outer ring buffer chamber 510, an outer ring through pipe 520, and an outer ring through pipe 530.

The outer annular tube 520 is straight and open at both ends. The outer circulation pipe 510 is positioned outside the hydrogen chamber pipe 420 and is arranged in a concentric structure with the hydrogen chamber pipe 420. The outlet end of the outer through-tube 520 is flush with the outlet end of the feed through-tube 130. The annular gap between the inner wall of the outer annular tube 520 and the hydrogen chamber tube 420 is a shielding gas flow passage. The protective gas passes through the protective gas flow channel and forms an annular protective gas air curtain when being sprayed out, so that the hydrogen and the oxygen are restrained and prevented from escaping. Meanwhile, the protective gas can cool the outer annular tube 520 to prevent high-temperature melting and material bonding.

And an outer ring buffer chamber 510 which is wrapped outside the hydrogen chamber pipe 420 and connected with the inlet end of the outer ring through pipe 520, and the two are communicated with each other.

An outer ring pipe 530, an outlet end of which is connected to the outer ring cushion chamber 510, communicates with an inner region of the outer ring cushion chamber 510. The number of the third oxygen pipes 390 is one or more, and the number of the third oxygen pipes can be increased. In this embodiment, a third oxygen tube 390 is illustrated as an example.

In one embodiment of the present application, in order to simplify the structure and improve the structural stability, the inner ring buffer chamber 220 is located outside the inlet end of the feed pipe 130, and the outer wall thereof is connected to the feed buffer chamber 120. The first oxygen buffer chamber 310 is located outside the inlet end of the inner annular tube 230, and the outer wall of the first oxygen buffer chamber is connected with the outer wall of the inner annular buffer chamber 220. The second oxygen buffer chamber 340 is located outside the inlet end of the second oxygen chamber tube 350, and the outer wall thereof is connected to the outer wall of the first oxygen buffer chamber 310. The hydrogen buffer chamber 410 is disposed outside the inlet section of the second epoxy chamber pipe 350, and the outer wall thereof is connected to the outer wall of the second oxygen buffer chamber 340. The inner ring buffer chamber 220 is located outside the inlet end of the feed-through pipe 130, and its outer wall is connected to the outer wall of the feed buffer chamber 120. The third oxygen buffer chamber 370 is disposed outside the inlet end of the second oxygen chamber pipe 350, and the outer walls thereof are connected to the outer walls of the second oxygen buffer chamber 340, respectively. The outer ring buffer chamber 510 is disposed outside the inlet end of the hydrogen chamber pipe 420, and the outer walls thereof are connected to the hydrogen buffer chambers 410, respectively. The above connection structure enables the feeding buffer cavity 120, the inner ring buffer cavity 220, the first oxygen buffer cavity 310, the second oxygen buffer cavity 340, the third oxygen buffer cavity 370, the hydrogen buffer cavity 410 and the outer ring buffer cavity 510 to be sequentially connected into a sugarcoated haw-shaped whole, and each internal area is independent. The closed end of the first epoxy chamber tube 320, the closed end of the second epoxy chamber tube 350, and the closed end of the third epoxy chamber tube coincide and are located near the inlet end of the hydrogen chamber tube 420.

The results of comparative tests using the high efficiency burner of example 2 and a conventional burner are shown in the following table:

categories

Maximum silicon tetrachloride feeding amount

Consumption of hydrogen

Consumption of oxygen

Producing glass products

Hydrogen consumption per kg glass

Oxygen consumption per kg glass

Conventional burner

2.4kg/h

24Nm3/h

12Nm3/h

0.6kg/h

40Nm3/kg

20Nm3/kg

High efficiency burner experiment 1

6.6kg/h

40Nm3/h

20Nm3/h

2.23kg/h

17.94Nm3/kg

8.97Nm3/kg

High efficiency burner experiment 2

7.2kg/h

42Nm3/h

21Nm3/h

2.4kg/h

17.5Nm3/kg

8.75Nm3/kg

High efficiency burner experiment 3

7.8kg/h

45Nm3/h

22.5Nm3/h

2.65kg/h

16.98Nm3/kg

8.49Nm3/kg

As can be seen from the table above, the feeding capacity of the high-efficiency burner is improved by about 3 times compared with that of the conventional burner, the glass output rate is improved by about 4 times, and the energy consumption is reduced by more than 1 time.

Claims (10)

1. A high efficiency burner for producing large size quartz glass, comprising:

the feeding assembly is provided with a straight tubular feeding through pipe, a through material conveying channel is arranged inside the feeding through pipe, the tail end of the material conveying channel is in a frustum shape with the inner diameter gradually reduced, the cone angle alpha of a frustum-shaped area is 2-30 degrees, and the height H is 3-20 mm;

the material protection gas component is arranged on the outer side of the feeding through pipe;

the oxygen supply assembly is arranged outside the material protection gas assembly;

the hydrogen supply assembly is arranged outside the oxygen supply assembly;

and

the protective gas assembly is arranged outside the hydrogen supply assembly;

wherein the feeding component introduces a silicon tetrachloride gas-phase raw material to form a linear material zone; the material protection gas component introduces oxygen to form an annular material protection gas air curtain and covers the linear material zone into the annular material protection gas air curtain; the oxygen supply assembly introduces oxygen to form a plurality of annular oxygen air curtains arranged in a concentric circle manner, and the annular protective material air curtain is covered to the innermost side; the hydrogen supply assembly introduces hydrogen to form an annular hydrogen air curtain and covers the annular oxygen air curtain, the annular protective material air curtain and the linear material area; the protective gas component introduces protective gas to form an annular protective gas air curtain and cover the annular hydrogen air curtain into the annular protective gas air curtain.

2. A high efficiency burner for the production of large size quartz glass according to claim 1, wherein the feed assembly further comprises:

the feeding buffer cavity is connected with the inlet end of the feeding through pipe;

and

the feed pipe is connected with the feeding buffer cavity.

3. A high efficiency burner for producing large size quartz glass according to claim 2, wherein the outlet end of the feed pipe discharges in a direction not coinciding with the axial center direction of the feed through pipe.

4. A high efficiency burner for producing large size quartz glass according to claim 1, 2 or 3, characterized in that the whole end of the feed-through tube is processed into a bell mouth shape with gradually shrinking diameter.

5. The high efficiency burner for producing large size quartz glass according to claim 4, wherein the shroud gas assembly comprises:

the two ends of the inner ring through pipe are communicated, and the inner ring through pipe is positioned on the outer side of the feeding through pipe and is arranged in a concentric circle structure with the feeding through pipe;

the inner ring buffer cavity is wrapped on the outer side of the feeding through pipe and is connected with the inlet end of the inner ring through pipe;

and

and the inner ring pipe is connected with the inner ring buffer cavity.

6. A high efficiency burner for the production of large size quartz glass according to claim 5, characterized in that the oxygen supply assembly comprises:

the first epoxy chamber pipe is positioned outside the inner annular through pipe and is arranged in a concentric circle structure mode with the inner annular through pipe;

the first epoxy buffer cavity is wrapped outside the inner annular through pipe and is connected with the inlet end of the first epoxy chamber pipe;

a first oxygen pipe connected with the first epoxy buffer cavity;

the first oxygen through pipes are circumferentially arranged by taking the axial center of the feeding through pipe as a central shaft, and the inlet ends of the first oxygen through pipes are connected with the first epoxy chamber pipe;

the second epoxy chamber pipe is positioned outside the first epoxy chamber pipe and is arranged in a concentric circle structure mode with the first epoxy chamber pipe;

the second epoxy buffer cavity is wrapped outside the first epoxy chamber pipe and is connected with the inlet end of the first epoxy chamber pipe;

a second oxygen pipe connected with the second epoxy buffer cavity;

and

the second oxygen through pipes are circumferentially arranged by taking the axial center of the feeding through pipe as a central shaft, and the inlet ends of the second oxygen through pipes are connected with a second epoxy chamber pipe; the circle formed by the second oxygen through pipe is positioned outside the circle formed by the first oxygen through pipe.

7. A high efficiency burner for producing large size quartz glass according to claim 6, wherein the hydrogen supply assembly comprises:

the hydrogen chamber pipe is positioned outside the second epoxy chamber pipe and is arranged in a concentric circle structure mode with the second epoxy chamber pipe;

the hydrogen buffer cavity is wrapped and arranged on the outer side of the second epoxy chamber pipe and is connected with the inlet end of the hydrogen chamber pipe;

and

and the outlet end of the hydrogen pipe is connected with the hydrogen buffer cavity.

8. The high efficiency burner for producing large size quartz glass according to claim 7, wherein the shielding gas assembly comprises:

the outer ring through pipe is positioned on the outer side of the hydrogen chamber pipe and is arranged in a concentric circle structure with the hydrogen chamber pipe;

the outer ring buffer cavity is wrapped outside the hydrogen chamber pipe and is connected with the inlet end of the outer ring through pipe;

and

and the outlet end of the outer ring pipe is connected with the outer ring buffer cavity.

9. The high efficiency burner for producing large size quartz glass according to claim 8, wherein the oxygen supply assembly further comprises:

a third epoxy chamber pipe with an open inlet end and a closed outlet end, wherein the third epoxy chamber pipe is positioned between the second epoxy chamber pipe and the hydrogen chamber pipe and is arranged in a concentric circle structure with the second epoxy chamber pipe;

the third epoxy buffer cavity is wrapped outside the second epoxy chamber pipe and is connected with the inlet end of the third epoxy chamber pipe;

the third oxygen pipe is connected with the third epoxy buffer cavity;

the third oxygen through pipes are circumferentially arranged by taking the axial center of the feeding through pipe as a central shaft, and the inlet ends of the third oxygen through pipes are connected with a third epoxy chamber pipe; and a circle formed by the third oxygen through pipe in a closed mode is positioned on the outer side of a circle formed by the second oxygen through pipe in a closed mode.

10. The high efficiency burner for producing large size quartz glass according to claim 9, wherein the end faces of the feed through pipe, the inner through ring pipe, the first through epoxy pipe, the second through epoxy pipe, the third through epoxy pipe, the hydrogen chamber pipe and the outer through ring pipe are flush;

or the closed ends of the first epoxy chamber pipe, the second epoxy chamber pipe and the third epoxy chamber pipe are superposed and positioned at the inlet end of the hydrogen chamber pipe;

or, the feeding buffer cavity, the inner ring buffer cavity, the first oxygen buffer cavity, the second oxygen buffer cavity, the third oxygen buffer cavity, the hydrogen buffer cavity and the outer ring buffer cavity are sequentially connected into a whole in a shape of a sugarcoated haw.

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