CN216005210U

CN216005210U - Semiconductor packaging structure

Info

Publication number: CN216005210U
Application number: CN202122531061.9U
Authority: CN
Inventors: 邓登峰
Original assignee: Hangzhou Silan Microelectronics Co Ltd
Current assignee: Hangzhou Silan Microelectronics Co Ltd
Priority date: 2021-10-20
Filing date: 2021-10-20
Publication date: 2022-03-11
Anticipated expiration: 2031-10-20

Abstract

The utility model provides a semiconductor packaging structure, including base plate, MEMS sensor tube core, plastic envelope layer and metal level, wherein, the MEMS sensor tube core is located the top surface of base plate, the plastic envelope cover the top surface and the parcel of base plate MEMS sensor tube core, the metal level covers the top surface of plastic envelope layer. Due to the fact that the Young model and the toughness of the metal layer are high, stress applied by the test fixture can be resisted when the calibration test is conducted, the stress is prevented from being transmitted to the interior of the MEMS sensor tube core, and therefore the null shift value is reduced.

Description

Semiconductor packaging structure

Technical Field

The utility model relates to the field of semiconductor technology, especially, relate to a semiconductor packaging structure.

Background

Micro-Electro-Mechanical systems (mems) refers to a combined System fabricated using Micro-machining technology and semiconductor electronics processing technology. MEMS technology is currently used mainly for sensor fabrication, such as MEMS accelerometers, MEMS gyroscopes, MEMS microphones, or MEMS pressure gauges, among others. The interior of the MEMS sensor die contains a movable mass that performs sensing functions such as acceleration, rotational speed, sound, or pressure. The finished product of the MEMS sensor needs to be tested before leaving a factory, specifically, a test fixture clamps a packaging body of the MEMS sensor to carry out calibration test, the bottom of the packaging body is contacted by a test probe to lead out an electric signal, and the top of the packaging body is pressurized by a pressing block to ensure that the packaging body is fixed in the test fixture. The pressing block is in direct contact with the surface of the packaging body, the stress is uneven, the movable mass block can move, the stress can be transmitted to the tube core of the MEMS sensor through the plastic packaging layer of the packaging body, the movable mass block generates tiny displacement, the MEMS sensor is not pressed by a clamp when finally a whole machine board card is pasted, and therefore the null shift value of the MEMS sensor is large.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a semiconductor package structure to solve the encapsulation body null shift value of current MEMS sensor big problem partially.

In order to achieve the above object, the present invention provides a semiconductor package structure, including:

a substrate;

a MEMS sensor die located on a top surface of the substrate;

the plastic packaging layer covers the top surface of the substrate and wraps the MEMS sensor tube core; and the number of the first and second groups,

and the metal layer covers the top surface of the plastic packaging layer.

Optionally, the plastic package layer has a young modulus of 5Gpa to 30 Gpa; and/or the metal layer is a metal layer with the Young modulus of 50-250 Gpa.

Optionally, the metal layer is made of one or more of copper, steel or aluminum.

Optionally, the thickness of the metal layer is 50um-400 um.

Optionally, the metal layer is adhered to the top surface of the plastic packaging layer through a first adhesion layer.

Optionally, the metal layer is formed by filling Al₂O₃The first adhesive layer of epoxy resin is adhered to the top surface of the molding layer.

Optionally, the metal layer is adhered to the top surface of the plastic packaging layer through a first adhesion layer resistant to temperature greater than 300 ℃.

Optionally, the metal layer is resistant to temperatureFilled Al at more than 300 DEG C₂O₃The first adhesive layer of epoxy resin is adhered to the top surface of the molding layer.

Optionally, the thickness of the first adhesion layer is 10um-100 um.

Optionally, the metal layer has a plurality of through holes therein.

Optionally, the radial width dimension of the perforations is 0.06mm-0.1 mm.

Optionally, the shape of the perforation is one or more of a circle, an ellipse, a polygon or an irregular shape.

Optionally, the method further includes:

a signal processing die located on a top surface of the MEMS sensor die or between the substrate and the MEMS sensor die.

Optionally, the signal processing die and the MEMS sensor die and the signal processing die and the substrate are electrically connected by a lead; or the signal processing tube core is electrically connected with the MEMS sensor tube core through bonding, and the signal processing tube core is electrically connected with the substrate through a lead.

Optionally, the plastic package layer further encapsulates the signal processing die and the leads.

Optionally, the MEMS sensor die is attached to the top surface of the substrate by a second adhesive layer, and the signal processing die is attached to the top surface of the MEMS sensor die by a third adhesive layer; or,

the signal processing die is attached to the top surface of the substrate by the second adhesive layer, and the MEMS sensor die is attached to the top surface of the MEMS sensor die by the third adhesive layer.

Optionally, the second adhesive layer and/or the third adhesive layer is a mounting glue layer or a mounting film.

Optionally, the MEMS sensor die is a MEMS accelerometer die or a MEMS gyroscope die.

The utility model provides an among the semiconductor package structure, including base plate, MEMS sensor tube core, plastic envelope layer and metal level, wherein, the MEMS sensor tube core is located the top surface of base plate, the plastic envelope cover the top surface and the parcel of base plate the MEMS sensor tube core, the metal level covers the top surface of plastic envelope layer. Due to the fact that the Young model and the toughness of the metal layer are high, stress applied by the test fixture can be resisted when the calibration test is conducted, the stress is prevented from being transmitted to the interior of the MEMS sensor tube core, and therefore the null shift value is reduced.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor package structure according to an embodiment of the present invention;

fig. 2 is a diagram illustrating a distribution of the through holes in the metal layer according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a semiconductor package structure according to a second embodiment of the present invention;

fig. 4 is a schematic structural diagram of a semiconductor package structure according to a third embodiment of the present invention;

wherein the reference numerals are:

100-a substrate; 201-a first adhesive layer; 202-a second adhesive layer; 203-a third adhesive layer; 300-a signal processing die; 400-a MEMS sensor die; 401-a signaling chip; 402-detection chip; 500-plastic packaging layer; 600-a metal layer; 600 a-perforation.

Detailed Description

The following description of the embodiments of the present invention will be described in more detail with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.

Example one

Fig. 1 is a schematic structural diagram of a semiconductor package structure according to this embodiment. As shown in fig. 1, the semiconductor package structure includes a substrate 100, a signal processing die 300, a MEMS sensor die 400, a molding layer 500, and a metal layer 600. Wherein the MEMS sensor die 400 is located on the top surface of the substrate 100, the signal processing die 300 is located on the top surface of the MEMS sensor die 400, and the molding layer 500 covers the top surface of the substrate 100 and wraps the signal processing die 300 and the MEMS sensor die 400. The top surface of the molding layer 500 is higher than the top surface of the MEMS sensor die 400 so that the signal processing die 300 and the MEMS sensor die 400 are completely encapsulated and the top surface of the molding layer 500 is flat. The metal layer 600 covers the top surface of the molding layer 500, and the young model and the toughness of the metal layer 600 are high, so that the stress applied by a test fixture can be resisted during calibration test, and the stress is prevented from being transmitted to the inside of the MEMS sensor tube core 400, thereby reducing the null shift value.

In this embodiment, the plastic package layer 500 is a plastic package layer with a young modulus of 5Gpa to 30Gpa, the metal layer 600 is a metal layer with a young modulus of 50Gpa to 250Gpa, and the young modulus of the metal layer 600 is much greater than that of the plastic package layer 500, so that the stress applied by the test fixture can be well resisted.

Based on this, the material of the metal layer 600 may be one or more of copper, steel, aluminum, or other metal materials with a larger young's modulus and good corrosion resistance, and in this embodiment, copper is used as the material of the metal layer 600.

With reference to fig. 1, the metal layer 600 is adhered to the top surface of the molding layer 500 by a first adhesive layer 201. The temperature resistance of the first adhesive layer 201 can be more than 300 ℃, so that the temperature drift value of the device cannot be influenced in the subsequent paster and use process.

In this embodiment, the first adhesion layer 201 is made of Al filled in₂O₃The epoxy resin of (1). Al (Al)₂O₃The temperature resistance of the epoxy resin can be more than 300 ℃, so that the epoxy resin has good temperature resistance and proper Young modulus, has small stress, has excellent adhesion with a plastic package material and metal, and can better adhere the metal layer 600 to the top surface of the plastic package layer 500. In addition, Al₂O₃The epoxy resin can be coated on the top surface of the molding layer 500 by a screen printing method, and after curing, the epoxy resin is coated on the top surfaceThe first adhesion layer 201 is formed, the consistency of coating can be guaranteed by adopting a screen printing mode, and meanwhile, the production efficiency is effectively improved, and the cost is reduced.

Of course, as an alternative embodiment, the material of the first adhesive layer 201 may also be pure epoxy resin or other common glue materials.

Optionally, the thickness of the metal layer is 50um-400um, and the thickness of the first adhesion layer is 10um-100um, but not limited thereto.

With reference to fig. 1, the metal layer 600 has a plurality of through holes 600a therein, and the through holes 600a penetrate through the metal layer 600 and expose the first adhesive layer 201. The through hole 600a can exhaust air bubbles inside the first adhesive layer 201 when the first adhesive layer 201 is not cured, and prevent a void from being generated between the first adhesive layer 201 and the metal layer 600 during the process of attaching the metal layer 600 to the molding layer 500.

Fig. 2 is a distribution diagram of the through hole 600a in the metal layer 600 according to the present embodiment. As shown in fig. 2, the number of the through holes 600a is 9, and 9 of the through holes 600a are distributed in three rows and three columns in the metal layer 600. It should be understood that the number of the perforations 600a is not limited to 9, but may be 1, 2, 3, 4, 8, or 10, etc.; the through holes 600a are not limited to be distributed in rows and columns in the metal layer 600, but may be distributed in a circle, a zigzag, or randomly, and will not be explained one by one here.

Referring to fig. 2, in the present embodiment, each of the through holes 600a is circular, and as an alternative embodiment, the through holes 600a may also be one or more of oval, polygonal or irregular; in addition, the shape of each perforation 600a may be the same or different, and the present invention is not limited thereto.

Optionally, the radial width dimension of the through hole 600a is 0.06mm-0.1mm, but should not be limited thereto.

It should be understood that in other embodiments, the perforations 600a may also be omitted.

Referring to fig. 1, in the present embodiment, the metal layer 600 completely covers the top surface of the plastic package layer 500, but not limited thereto, the metal layer 600 may also cover a portion of the top surface of the plastic package layer 500, and the holding block of the test fixture only contacts with the metal layer 600 during the calibration test.

Referring to fig. 1, the substrate 100 supports the signal processing die 300, the MEMS sensor die 400, the molding layer 500 and the metal layer 600, and may be a single-layer or multi-layer PCB made of BT resin substrate material, which may be determined by actual product design parameters.

In addition, the top surfaces of the substrate 100 and the signal processing die 300 are electrical connection surfaces thereof, the MEMS sensor die 400 includes a signal conducting chip 401 and a detecting chip 402, the detecting chip 402 is bonded on the signal conducting chip 401 through a bonding process and is electrically connected, the top surface of the MEMS sensor die 400 is a detecting surface of the detecting chip 402, and the bottom surface of the MEMS sensor die 400 is a back surface of the signal conducting chip 401.

Based on this, the MEMS sensor die 400 is attached to the top surface of the substrate 100, and the signal processing die 300 is attached to the top surface of the MEMS sensor die 400. Specifically, the bottom side of the MEMS sensor die 400 is attached to the top surface of the substrate 100 by a second adhesive layer 202, and the bottom side of the signal processing die 300 is attached to the top surface of the MEMS sensor die 400 by a third adhesive layer 203.

In this embodiment, the second adhesive layer 202 and/or the third adhesive layer 203 may be a die attach adhesive layer or a die attach film (DAF film).

In this embodiment, the area of the signal conducting chip 401 of the MEMS sensor die 400 is larger than the area of the detecting chip 402, and a step exists between the edge of the signal conducting chip 401 and the edge of the detecting chip 402, so as to expose at least the electrical output end of the signal conducting chip 401, and the electrical output end of the signal conducting chip 401 is also the electrical output end of the MEMS sensor die 400. The area of the signal conducting chip 401 is larger than that of the signal processing die 300, and a step is also formed between the edge of the signal conducting chip 401 and the edge of the signal processing die 300, so that at least the electrical output end of the signal conducting chip 401 is exposed. The area of the MEMS sensor die 400 is smaller than the area of the substrate 100, the top surface of the substrate 100 is not completely covered by the MEMS sensor die 400, and there is also a step between the edge of the MEMS sensor die 400 and the edge of the substrate 100, thereby exposing at least the electrical input of the substrate 100.

Based on this, the MEMS sensor die 400 (specifically, the signal conducting chip 401) is electrically connected to the signal processing die 300 through a first lead 701, and the signal processing die 300 is electrically connected to the substrate 100 through a second lead 702. Specifically, one end of the first lead 701 is connected to an electrical output end of the signal conducting chip 401, and the other end is connected to an electrical input end of the signal processing die 300; one end of the second lead 702 is connected to the electrical output terminal of the signal processing die 300, and the other end is connected to the electrical input terminal of the substrate 100. In this way, the detection signal generated by the detection chip 402 can be transmitted to the signal processing die 300 through the signal transmission chip 401, and is processed by the signal processing die 300 and then output through the substrate 100.

In this embodiment, the MEMS sensor die 400 includes a bonded detection chip 402 and a signal conduction chip 401, and the electrical connection between the detection chip 402 and the signal processing die 300 is realized through the signal conduction chip 401, which is simple in process and suitable for small-batch production.

Further, the molding layer 500 completely covers and wraps the top surfaces of the substrate 100 and the signal processing die 300 and the side surfaces of the MEMS sensor die 400 and the signal processing die 300. It should be understood that the first lead 701 and the second lead 702 should also be covered by the molding layer 500, so as to prevent intrusion from the outside.

Alternatively, the MEMS sensor die may be a MEMS accelerometer die or a MEMS gyroscope die, or the like.

Example two

Fig. 3 is a schematic structural diagram of the semiconductor package structure provided in this embodiment. As shown in fig. 3, the difference from the first embodiment is that, in the present embodiment, the signal processing die 300 is located between the substrate 100 and the MEMS sensor die 400.

Specifically, the bottom surface of the signal processing die 300 is adhered to the top surface of the substrate 100 by the second adhesive layer 202, and the bottom surface of the MEMS sensor die 400 is adhered to the top surface of the signal processing die 300 by the third adhesive layer 203.

Further, the area of the signal processing die 300 is larger than that of the signal conducting chip 401, and a step exists between the edge of the signal conducting chip 401 and the edge of the signal processing die 300, so as to expose at least the electrical input end and the electrical output end of the signal processing die 300. The area of the signal processing die 300 is smaller than the area of the substrate 100, the top surface of the substrate 100 is not completely covered by the signal processing die 300, and a step is also present between the edge of the signal processing die 300 and the edge of the substrate 100, so as to expose at least the electrical input terminal of the substrate 100.

EXAMPLE III

Fig. 4 is a schematic structural diagram of the semiconductor package structure provided in this embodiment. As shown in fig. 4, the difference between the first embodiment and the second embodiment is that, in the present embodiment, the MEMS sensor die includes a detection chip 402, the detection chip 402 is bonded on the signal processing die 300 through a bonding process to be directly electrically connected to the signal processing die 300, and the signal processing die 300 is attached to the top surface of the substrate 100.

Further, the area of the signal processing die 300 is larger than that of the detection chip 402, and a step exists between the edge of the detection chip 402 and the edge of the signal processing die 300, so as to expose at least the electrical output terminal of the signal processing die 300. The area of the signal processing die 300 is smaller than the area of the substrate 100, the top surface of the substrate 100 is not completely covered by the signal processing die 300, and a step is also present between the edge of the signal processing die 300 and the edge of the substrate 100, so as to expose at least the electrical input terminal of the substrate 100.

Accordingly, the signal processing die 300 is electrically connected to the substrate 100 through a third lead 703, specifically, one end of the third lead 703 is connected to an electrical output end of the signal processing die 300, and the other end is connected to an electrical input end of the substrate 100. In this way, the detection signal generated by the detection chip 402 can be directly transmitted to the signal processing die 300, and is processed by the signal processing die 300 and then output through the substrate 100.

It should be understood that the third lead 703 is also encapsulated by the molding layer 500, thereby preventing external intrusion.

Compared with the first embodiment and the second embodiment, the MEMS sensor die in the present embodiment only includes the detection chip 402, and the detection chip 402 is directly bonded to the signal processing die 300, so that a signal conducting chip is omitted, the cost is saved, and the MEMS sensor die is suitable for mass production.

To sum up, in the embodiment of the utility model provides an among the semiconductor package structure, including base plate, MEMS sensor tube core, plastic envelope layer and metal level, wherein, the MEMS sensor tube core is located the top surface of base plate, the plastic envelope cover the top surface of base plate and parcel MEMS sensor tube core, the metal level covers the top surface of plastic envelope layer. Due to the fact that the Young model and the toughness of the metal layer are high, stress applied by the test fixture can be resisted when the calibration test is conducted, the stress is prevented from being transmitted to the interior of the MEMS sensor tube core, and therefore the null shift value is reduced.

It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.

It should also be noted that, although the present invention has been described with reference to the preferred embodiments, the above-mentioned embodiments are not intended to limit the present invention. To anyone skilled in the art, without departing from the scope of the present invention, the technical solution disclosed above can be used to make many possible variations and modifications to the technical solution of the present invention, or to modify equivalent embodiments with equivalent variations. Therefore, any simple modification, equivalent change and modification made to the above embodiments by the technical entity of the present invention all still belong to the protection scope of the technical solution of the present invention, where the technical entity does not depart from the content of the technical solution of the present invention.

It should be further understood that the terms "first," "second," "third," and the like in the description are used for distinguishing between various components, elements, steps, and the like, and are not intended to imply a logical or sequential relationship between various components, elements, steps, or the like, unless otherwise indicated or indicated.

It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.

Claims

1. A semiconductor package structure, comprising:

a substrate;

a MEMS sensor die located on a top surface of the substrate;

and the metal layer covers the top surface of the plastic packaging layer.

2. The semiconductor package structure of claim 1, wherein the molding layer is a molding layer having a young's modulus of 5Gpa to 30 Gpa; and/or the metal layer is a metal layer with the Young modulus of 50-250 Gpa.

3. The semiconductor package structure of claim 1 or 2, wherein the metal layer is one or more of copper, steel, or aluminum.

4. The semiconductor package structure of claim 1, wherein the metal layer has a thickness of 50um-400 um.

5. The semiconductor package structure of claim 1, wherein the metal layer is adhered to the top surface of the molding layer by a first adhesive layer.

6. The semiconductor package structure of claim 1, in which the metal layer is formed by filling Al₂O₃The first adhesive layer of epoxy resin is adhered to the top surface of the molding layer.

7. The semiconductor package structure of claim 1, wherein the metal layer is adhered to the top surface of the molding layer by a first adhesive layer that is resistant to temperatures greater than 300 degrees celsius.

8. The semiconductor package of claim 1, wherein the metal layer is filled with Al resistant to temperatures greater than 300 degrees celsius₂O₃The first adhesive layer of epoxy resin is adhered to the top surface of the molding layer.

9. The semiconductor package structure of any one of claims 5-8, wherein the first adhesion layer has a thickness of 10um-100 um.

10. The semiconductor package structure of claim 1, wherein the metal layer has a plurality of through holes therein.

11. The semiconductor package structure of claim 10, wherein the through-hole has a radial width dimension of 0.06mm-0.1 mm.

12. The semiconductor package structure of claim 10 or 11, wherein the shape of the through-hole is one or more of circular, elliptical, polygonal, or irregular.

13. The semiconductor package structure of claim 1, further comprising:

14. The semiconductor package structure of claim 13, wherein the signal processing die and the MEMS sensor die and the signal processing die and the substrate are electrically connected by wires; or,

the signal processing tube core is electrically connected with the MEMS sensor tube core through bonding, and the signal processing tube core is electrically connected with the substrate through a lead.

15. The semiconductor package structure of claim 14, wherein the molding compound further encapsulates the signal processing die and the leads.

16. The semiconductor package structure of claim 13, wherein the MEMS sensor die is attached to the top surface of the substrate by a second adhesive layer, and the signal processing die is attached to the top surface of the MEMS sensor die by a third adhesive layer; or,

17. The semiconductor package structure of claim 16, wherein the second adhesive layer and/or the third adhesive layer is a mounting glue layer or a mounting film.

18. The semiconductor package structure of claim 1, wherein the MEMS sensor die is a MEMS accelerometer die or a MEMS gyroscope die.