CN215817941U - Three-level power unit module and frequency converter - Google Patents
Three-level power unit module and frequency converter Download PDFInfo
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- CN215817941U CN215817941U CN202122006635.0U CN202122006635U CN215817941U CN 215817941 U CN215817941 U CN 215817941U CN 202122006635 U CN202122006635 U CN 202122006635U CN 215817941 U CN215817941 U CN 215817941U
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Abstract
The utility model discloses a three-level power unit module and a frequency converter, and belongs to the technical field of frequency converters. Wherein, the power unit module includes: the first semiconductor switch element group, the second semiconductor switch element group and the third semiconductor switch element group are sequentially arranged on the surface of one side of the radiator in a single-row or single-column matrix mode. According to the utility model, through the most reasonable current flow direction arrangement of the semiconductor switch elements, the three semiconductor switch element groups are arranged in a single-row matrix manner, so that the size of the power module is reduced, the layout of the laminated busbar is optimized, the stray inductance of a current conversion loop is effectively reduced, the wiring interface is more reasonable to arrange, and the cost is reduced while the power density and the performance are improved.
Description
Technical Field
The utility model relates to the field of frequency converters, in particular to a three-level power unit module and a frequency converter.
Background
The power module is a core component in a whole machine of the medium-high voltage large-current three-level four-quadrant frequency converter. The semiconductor switch device generally comprises a radiator, a semiconductor switch element and a laminated busbar, wherein each element is connected with the radiator for radiating, and the elements are electrically connected through the laminated busbar. Whether the current carrying capacity of a semiconductor switching element serving as a key element in a power module is reasonably and fully utilized or not determines the competitiveness of a product, the current carrying capacity is often limited by stray inductance of an electrical connection busbar, and the stray inductance is closely related to the current flow direction, the stacking relation, the arrangement mode of the semiconductor switching element and the like of a laminated busbar.
The existing semiconductor switch element has the problems of large sense of incongruity and waste of layout space due to layout reasons, and the power density of the whole power unit module is reduced.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems of large stray inductance of a power module and waste of layout space caused by layout reasons, the application provides a three-level power unit module and a frequency converter.
According to an aspect of an embodiment of the present application, there is provided a three-level power cell module including a heat sink, a first semiconductor switching element group, a second semiconductor switching element group, a third semiconductor switching element group, and a laminated bus bar; the laminated busbar comprises a P direct-current copper bar, an N direct-current copper bar, a 0-current copper bar, an AC alternating-current copper bar, an A connecting copper bar and a B connecting copper bar, and the first semiconductor switch element group, the second semiconductor switch element group and the third semiconductor switch element group are sequentially arranged on the surface of one side of the radiator in a single-row or single-column matrix manner; the P direct current copper bar, the B connecting copper bar and the AC alternating current copper bar are positioned on a first plane; the 0 electric copper bar and the A connecting copper bar are positioned on a second plane; the N direct current copper bars are positioned on a third plane; the first plane, the second plane and the third plane are parallel to each other and are not in the same plane;
further, the above scheme further includes that the semiconductor switch elements included in the first semiconductor switch element group, the second semiconductor switch element group, and the third semiconductor switch element group are double-transistor insulated gate bipolar transistors;
furthermore, the scheme also comprises that the P direct-current copper bar is electrically connected with a third pin of the double-tube insulated gate bipolar transistor contained in the third semiconductor switch element group;
the N direct-current copper bar is electrically connected with a second pin of the double-tube insulated gate bipolar transistor contained in the second semiconductor switch element group;
the 0 electric copper bar is respectively and electrically connected with a third pin of the double-tube insulated gate bipolar transistor contained in the second semiconductor switch element group and a second pin of the double-tube insulated gate bipolar transistor contained in the third semiconductor switch element group;
the AC alternating-current copper bar is electrically connected with a first pin of the double-tube insulated gate bipolar transistor contained in the first semiconductor switch element group;
the A connecting copper bar is respectively and electrically connected with a second pin of the double-tube insulated gate bipolar transistor contained in the first semiconductor switch element group and a first pin of the double-tube insulated gate bipolar transistor contained in the second semiconductor switch element group;
the B connecting copper bar is respectively and electrically connected with a third pin of the double-tube insulated gate bipolar transistor contained in the first semiconductor switch element group and a first pin of the double-tube insulated gate bipolar transistor contained in the third semiconductor switch element group;
the double-tube insulated gate bipolar transistor comprises a first insulated gate bipolar transistor and a second insulated gate bipolar transistor; the double-tube insulated gate bipolar transistor comprises a first pin, a second pin and a third pin; the first pin is connected with an emitter of the first insulated gate bipolar transistor and a collector of the second insulated gate bipolar transistor; the second pin is connected with an emitter of the second insulated gate bipolar transistor; the third pin is connected with a collector electrode of the first insulated gate bipolar transistor;
furthermore, the above scheme further includes that the P dc copper bar is located above the third semiconductor switch element group and extends to the outer side of the third semiconductor switch element group to form a wiring end of the P dc copper bar;
the 0 electric copper bar is positioned above the second semiconductor switch element group and the third semiconductor switch element group and extends to the outer side of the third semiconductor switch element group to form a wiring end of the 0 electric copper bar;
the N direct current copper bars are positioned above the second semiconductor switch element group and extend to the outer side of the third semiconductor switch element group from the upper part of the third semiconductor switch element group to form wiring ends of the N direct current copper bars;
the AC alternating-current copper bar is positioned above the first semiconductor switch element group and extends to the outer side of the first semiconductor switch element group to form a wiring end of the AC alternating-current copper bar;
the A connecting copper bar is positioned above the first semiconductor switch element group and the second semiconductor switch element group;
the B connecting copper bar is positioned above the first semiconductor switch element group, the second semiconductor switch element group and the third semiconductor switch element group;
further, the above scheme further includes that the second plane is located above the first plane; the third plane is located above the second plane;
furthermore, the above scheme further includes that the number of the semiconductor switch elements included in the first semiconductor switch element group, the second semiconductor switch element group, and the third semiconductor switch element group is the same and at least one;
further, the above-described aspect further includes that the semiconductor switching elements included in the first semiconductor switching element group are arranged in a single row or a single column, and an arrangement direction is perpendicular to an arrangement direction of the first semiconductor switching element group, the second semiconductor switching element group, and the third semiconductor switching element group;
the semiconductor switching elements included in the second semiconductor switching element group are arranged in a single row or a single column, and the arrangement direction is perpendicular to the arrangement direction of the first semiconductor switching element group, the second semiconductor switching element group, and the third semiconductor switching element group;
the semiconductor switching elements included in the third semiconductor switching element group are arranged in a single row or a single column, and the arrangement direction is perpendicular to the arrangement direction of the first semiconductor switching element group, the second semiconductor switching element group, and the third semiconductor switching element group;
furthermore, the scheme also comprises that the radiator is one of a liquid cooling radiator, a heat pipe radiator and a radiating substrate;
further, the above-mentioned scheme further includes that the length and width of the heat sink are matched with the outer dimensions of the first semiconductor switching element group, the second semiconductor switching element group, and the third semiconductor switching element group arranged in a matrix manner.
According to another aspect of the embodiments of the present application, there is also provided a frequency converter including the three-level power unit module described above.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages:
in the embodiment of the application, the position relation and the arrangement mode of each element in the power unit module are adjusted, the first semiconductor switch element group, the second semiconductor switch element group and the third semiconductor switch element group are sequentially arranged, and the three layers of the elements are electrically connected through the stacked busbar, so that the layout of the stacked busbar is optimized, the problems of large stray inductance and layout space waste caused by layout reasons are solved, the stray inductance of a commutation loop is effectively reduced, the current carrying capacity of the semiconductor switch element group is improved, the technical effect of improving the performance of the power unit module is realized, and the number of the stacked busbar is reduced, the power density and the performance are improved, and meanwhile, the cost is reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a schematic layout diagram of a three-level power unit module according to an embodiment of the present disclosure;
fig. 2 is a schematic layout diagram of an internal pin of a dual-transistor igbt according to an embodiment of the present application;
fig. 3 is a schematic connection diagram of a semiconductor switch element and a laminated busbar in a three-level power unit module according to an embodiment of the present disclosure;
fig. 4 is a schematic circuit diagram of a three-level topology according to an embodiment of the present application;
fig. 5 is a schematic layout diagram of a three-level power cell module according to another aspect of the present disclosure;
fig. 6 is a schematic connection diagram of a semiconductor switching element and a laminated busbar in another three-level power unit module according to an embodiment of the present disclosure;
fig. 7 is a schematic connection diagram of a semiconductor switching element and a laminated busbar in another three-level power unit module according to an embodiment of the present disclosure;
fig. 8 is a layout diagram of three sets of three-level power cell modules in another view according to the embodiment of the present application.
The reference numbers are as follows:
101-a heat sink; 201-first group of semiconductor switching elements; 202-a second group of semiconductor switching elements; 203-third semiconductor switching element group; 301-P direct current copper bars; 302-N direct current copper bars; 303-0 copper busbar; 304-AC alternating-current copper bars; 305-A is connected with the copper bar; 306-B are connected to the copper bars.
Detailed Description
In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments, and the illustrative embodiments and descriptions thereof of the present application are used for explaining the present application and do not constitute a limitation to the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another similar entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
According to an aspect of the embodiments of the present application, there is provided an embodiment of a three-level power cell module, as shown in fig. 1, the power cell module includes a heat sink 101, a first semiconductor switching element group 201, a second semiconductor switching element group 202, a third semiconductor switching element group 203, and a laminated busbar. The laminated busbar comprises a P direct current copper bar 301, an N direct current copper bar 302, a 0 electric copper bar 303, an AC alternating current copper bar 304, an A connecting copper bar 305 and a B connecting copper bar 306.
In the present embodiment, the relative positional relationship of the three semiconductor switching element groups and the heat sink 101 is as follows: the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203 are arranged in order on a single-side surface of the heat sink 101 in a single row or single column matrix manner. The three semiconductor switch element groups are electrically connected by each bus bar arranged in a laminated mode, the laminated bus bar and the three semiconductor switch element groups are located on the same side of the radiator 101, P direct current copper bars 301, B connecting copper bars 306 and AC alternating current copper bars 304 are located on a first plane, 0 electric copper bars 303 and A connecting copper bars 305 are located on a second plane, N direct current copper bars 302 are located on a third plane, and the first plane, the second plane and the third plane are parallel to each other and are not located on the same plane.
In this embodiment, by adjusting the layout of the first semiconductor switch element group 201, the second semiconductor switch element group 202, and the third semiconductor switch element group 203, six busbars connecting the respective elements are connected to the respective semiconductor switch elements in the power unit module by only setting three layers. Meanwhile, the semiconductor switch element groups are selected, the number of the semiconductor switch elements in each semiconductor switch element group can be matched randomly according to actual requirements, the performance of the power unit module is greatly improved, and the power unit module can be suitable for various occasions. In addition, the design of the three-layer busbar reduces the total volume of the required busbar and reduces the cost.
In one embodiment, the semiconductor switch elements of the same type can be selected from the first semiconductor switch element group 201, the second semiconductor switch element group 202, and the third semiconductor switch element group 203, so that the power unit module is more convenient to layout.
In this embodiment, for example, the semiconductor switching element is a double-transistor Insulated Gate Bipolar Transistor (IGBT), and each double-transistor IGBT includes two IGBTs therein. On the same side heat dissipation surface of the heat sink 101, the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203 are arranged in this order. In practical applications, the semiconductor switching elements in the three semiconductor switching element groups can also be replaced by other three-tube IGBT or four-tube IGBT switching devices. Of course, if a three-tube IGBT is selected, the semiconductor switching element group may be optimized to use two groups, and if a four-tube IGBT is selected, the four-tube IGBT may be used instead of two groups of semiconductor switching elements.
In this embodiment, as shown in fig. 2, the semiconductor switching element is a double-transistor IGBT, each double-transistor IGBT includes two IGBTs, that is, a first IGBT and a second IGBT, and the double-transistor IGBT includes a plurality of pins. The first pin 1 is connected with an emitter of the first insulated gate bipolar transistor and a collector of the second insulated gate bipolar transistor, the second pin 2 is connected with an emitter of the second insulated gate bipolar transistor, and the third pin 3 is connected with a collector of the first insulated gate bipolar transistor.
In this embodiment, for example, each semiconductor switch element group includes three double-tube IGBTs, and the specific connection relationship between the laminated busbar and the three semiconductor switch element groups is as follows:
as shown in fig. 3, the P dc copper bar is electrically connected to the third pin of each dual-transistor igbt included in the third semiconductor switch element group 203, the N dc copper bar is electrically connected to the second pin of each dual-transistor igbt included in the second semiconductor switch element group 202, the 0 AC copper bar is electrically connected to the third pin of each dual-transistor igbt included in the second semiconductor switch element group 202 and the second pin of each dual-transistor igbt included in the third semiconductor switch element group 203, the a connection copper bar is electrically connected to the first pin of each dual-transistor igbt included in the first semiconductor switch element group 201, and the a connection copper bar is electrically connected to the second pin of each dual-transistor igbt included in the first semiconductor switch element group 201 and the first pin of each dual-transistor igbt included in the second semiconductor switch element group 202 And the B connecting copper bar is electrically connected with the third pin of each double-transistor insulated gate bipolar transistor included in the first semiconductor switch element group 201 and the first pin of each double-transistor insulated gate bipolar transistor included in the third semiconductor switch element group 203.
Through this connection, the three-level power cell module may constitute one phase, such as the U-phase (V-phase and W-phase constitute the same way as the U-phase) in the circuit of the three-level topology of fig. 4. In the present embodiment, the third semiconductor switching element group 203 corresponds to Sa1 and D1 in the topology, the second semiconductor switching element group 202 corresponds to Sa2 and Sa3 in the topology, and the first semiconductor switching element group 201 corresponds to D2 and Sa4 in the topology. The IGBT equivalent to the first diode D1 needs to have its gate shorted to its emitter, and similarly, the IGBT equivalent to the second diode D2 needs to have its gate shorted to its emitter.
Therefore, the circuit with the three-level topological structure can be realized by selecting the semiconductor switch elements with the same type, the purchase and the assembly in the production process are convenient, and the matching and use problems among different elements are not required to be considered. The three phases can be formed by using the three groups of power unit modules, the effect seen from the other side of the radiator 101 is as shown in fig. 8, the wiring ends of the input P direct current copper bar, the 0 electric copper bar and the N direct current copper bar of each phase are all positioned on one side, and the wiring ends of the output AC alternating current copper bar are all positioned on the other side, so that wiring and use are facilitated. The three-level four-quadrant frequency converter can be applied to a rectification and inversion unit module of the three-level four-quadrant frequency converter and an inversion unit module of the three-level two-quadrant frequency converter. Alternatively, a group of modules applied to a single-phase power cell may be used. Of course, the application scenario is only illustrated here, and the actual application scenario is not limited thereto, and the embodiment is only illustrated in that each semiconductor switching element group includes three double-tube IGBTs, and the actual application is not limited to three.
In one embodiment, as shown in fig. 5, the specific relative positions of the laminated bus bar and the semiconductor switch element group are as follows: the P direct current copper bar is positioned above the third semiconductor switch element group 203 and extends to the outer side of the third semiconductor switch element group 203 to form a wiring end of the P direct current copper bar, the 0 electric copper bar is positioned above the second semiconductor switch element group 202 and the third semiconductor switch element group 203 and extends to the outer side of the third semiconductor switch element group 203 to form a wiring end of the 0 electric copper bar, the N direct current copper bar is positioned above the second semiconductor switch element group 202 and extends to the outer side of the third semiconductor switch element group 203 through the upper side of the third semiconductor switch element group 203 to form a wiring end of the N direct current copper bar, the AC alternating current copper bar is positioned above the first semiconductor switch element group 201 and extends to the outer side of the first semiconductor switch element group 201 to form a wiring end of the AC alternating current copper bar, the A connection copper bar is positioned above the first semiconductor switch element group 201 and the second semiconductor switch element group 202, the B connection copper bar is located above the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203.
In this embodiment, the heat sink 101 is used as a reference plane, and the direction perpendicular to the heat sink 101 on the side of each semiconductor switch element group is set as an upward direction (the upward direction in other embodiments is the same as the upward direction in this embodiment). The first semiconductor switching element group 201, the second semiconductor switching element group 202 and the third semiconductor switching element group 203 are above the heat sink 101, and the first plane, the second plane and the third plane where the laminated busbar is located are above the first semiconductor switching element group 201, the second semiconductor switching element group 202 and the third semiconductor switching element group 203.
In the present embodiment, the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203 are arranged in this order on the same horizontal plane above the heat sink 101 with the heat sink 101 as a reference plane, the second semiconductor switching element group 202 side is the inside of the first semiconductor switching element group 201 with respect to the first semiconductor switching element group 201, and the opposite direction is the outside of the first semiconductor switching element group 201 (the outside in other embodiments is the same as that in the present embodiment), and the second semiconductor switching element group 202 side is the inside of the third semiconductor switching element group 203 with respect to the third semiconductor switching element group 203, and the opposite direction is the outside of the third semiconductor switching element group 203 (the outside in other embodiments is the same as that in the present embodiment). P direct current copper bar 301, N direct current copper bar 302 and 0 electric copper bar 303 extend to the outside of third semiconductor switch element 203 respectively and form respective wiring end, and these three input ports are in an area, are favorable to using the circuit connection wiring of this power unit module, facilitate the use.
In one embodiment, specifically, the laminated bus bar is located in three planes, a first plane is located above the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203, a second plane is located above the first plane, and a third plane is located above the second plane. The first plane including three bus bars is arranged above the first semiconductor switch element group 201, the second semiconductor switch element group 202 and the third semiconductor switch element group 203, the second plane including two bus bars is arranged above the first plane, and the third plane including one bus bar is arranged above the second plane, so that the arrangement is convenient for production and assembly.
In one embodiment, the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203 include the same number of semiconductor switching elements and at least one semiconductor switching element. Wherein each group of semiconductor switching elements comprises three semiconductor switching elements, as in fig. 3 above. Of course, each semiconductor switching element group may include one semiconductor switching element as shown in fig. 6, or may include two semiconductor switching elements as shown in fig. 7. Other numbers of semiconductor switching elements are not illustrated, and are within the scope of the present embodiment.
In this embodiment, the number of the semiconductor switch elements included in the semiconductor switch element group can be selected according to actual needs, so that the functions of the power unit modules can be optimized, and the appropriate power unit modules can be selected according to working condition environments.
In one embodiment, as shown in fig. 1, when the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203 are arranged in a single column on one side of the heat sink 101, the semiconductor switching elements included in each semiconductor switching element group are arranged in a single row within the group, and are perpendicular to the direction in which the three semiconductor switching element groups are arranged. When the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203 are arranged in a single row on one side of the heat sink 101, the semiconductor switching elements included in each semiconductor switching element group are arranged in a single column within the group, and are perpendicular to the direction in which the three semiconductor switching element groups are arranged. Therefore, the layout of the semiconductor switch element is compact, the space of the power unit module is saved, and the power density of the power unit module is improved.
In one embodiment, the heat sink 101 is one of a liquid cooling heat sink, a heat pipe heat sink and a heat dissipation substrate, and different types of heat sinks can be selected according to the actual situation of the application scenario.
In one embodiment, the length and width of the heat sink 101 are matched to the outer dimensions of the matrix arrangement of the first semiconductor switching element group 201, the second semiconductor switching element group 202, and the third semiconductor switching element group 203. The overall dimension of the radiator 101 is matched according to the overall dimension of each element arrangement, so that the purpose of radiating can be achieved, the dimension of the power module can be reasonably designed, and the waste of space and radiator materials is avoided.
In another embodiment provided by the present application, a frequency converter is further provided, where the frequency converter includes any three-level power unit module in the above embodiments, and a performance of the frequency converter can be improved due to low stray inductance and strong current-carrying capability of a commutation loop of the frequency converter using the three-level power unit module.
Claims (10)
1. A three-level power unit module comprises a radiator, a first semiconductor switch element group, a second semiconductor switch element group, a third semiconductor switch element group and a laminated busbar; the laminated busbar comprises a P direct-current copper bar, an N direct-current copper bar, a 0-current copper bar, an AC alternating-current copper bar, an A connecting copper bar and a B connecting copper bar, and is characterized in that the first semiconductor switch element group, the second semiconductor switch element group and the third semiconductor switch element group are sequentially arranged on the surface of one side of the radiator in a single-row or single-column matrix manner; the P direct current copper bar, the B connecting copper bar and the AC alternating current copper bar are positioned on a first plane; the 0 electric copper bar and the A connecting copper bar are positioned on a second plane; the N direct current copper bars are positioned on a third plane; the first plane, the second plane and the third plane are parallel to each other and are not in the same plane.
2. The three-level power cell module of claim 1, wherein the semiconductor switch elements included in the first, second, and third groups of semiconductor switch elements are dual-transistor insulated gate bipolar transistors.
3. The three-level power cell module of claim 2, wherein the P dc copper bar is electrically connected to a third pin of the dual-transistor igbt included in the third semiconductor switch element group;
the N direct-current copper bar is electrically connected with a second pin of the double-tube insulated gate bipolar transistor contained in the second semiconductor switch element group;
the 0 electric copper bar is respectively and electrically connected with a third pin of the double-tube insulated gate bipolar transistor contained in the second semiconductor switch element group and a second pin of the double-tube insulated gate bipolar transistor contained in the third semiconductor switch element group;
the AC alternating-current copper bar is electrically connected with a first pin of the double-tube insulated gate bipolar transistor contained in the first semiconductor switch element group;
the A connecting copper bar is respectively and electrically connected with a second pin of the double-tube insulated gate bipolar transistor contained in the first semiconductor switch element group and a first pin of the double-tube insulated gate bipolar transistor contained in the second semiconductor switch element group;
the B connecting copper bar is respectively and electrically connected with a third pin of the double-tube insulated gate bipolar transistor contained in the first semiconductor switch element group and a first pin of the double-tube insulated gate bipolar transistor contained in the third semiconductor switch element group;
the double-tube insulated gate bipolar transistor comprises a first insulated gate bipolar transistor and a second insulated gate bipolar transistor; the double-tube insulated gate bipolar transistor comprises a first pin, a second pin and a third pin; the first pin is connected with an emitter of the first insulated gate bipolar transistor and a collector of the second insulated gate bipolar transistor; the second pin is connected with an emitter of the second insulated gate bipolar transistor; the third pin is connected with a collector electrode of the first insulated gate bipolar transistor.
4. The three-level power cell module of claim 3, wherein said P DC copper bar is located above said third semiconductor switch element group and extends to the outside of said third semiconductor switch element group to form the connection terminal of said P DC copper bar;
the 0 electric copper bar is positioned above the second semiconductor switch element group and the third semiconductor switch element group and extends to the outer side of the third semiconductor switch element group to form a wiring end of the 0 electric copper bar;
the N direct current copper bars are positioned above the second semiconductor switch element group and extend to the outer side of the third semiconductor switch element group from the upper part of the third semiconductor switch element group to form wiring ends of the N direct current copper bars;
the AC alternating-current copper bar is positioned above the first semiconductor switch element group and extends to the outer side of the first semiconductor switch element group to form a wiring end of the AC alternating-current copper bar;
the A connecting copper bar is positioned above the first semiconductor switch element group and the second semiconductor switch element group;
the B connecting copper bar is positioned above the first semiconductor switch element group, the second semiconductor switch element group and the third semiconductor switch element group.
5. The three-level power cell module of claim 4, wherein the second plane is above the first plane; the third plane is located above the second plane.
6. The three-level power cell module of claim 1, wherein the first, second, and third groups of semiconductor switching elements comprise the same number of semiconductor switching elements as at least one.
7. The three-level power cell module according to claim 1, wherein the semiconductor switch elements included in the first semiconductor switch element group are arranged in a single column or row in a direction perpendicular to the arrangement direction of the first semiconductor switch element group, the second semiconductor switch element group, and the third semiconductor switch element group;
the semiconductor switching elements included in the second semiconductor switching element group are arranged in a single row or a single column, and the arrangement direction is perpendicular to the arrangement direction of the first semiconductor switching element group, the second semiconductor switching element group, and the third semiconductor switching element group;
the semiconductor switching elements included in the third semiconductor switching element group are arranged in a single row or a single column, and the arrangement direction is perpendicular to the arrangement direction of the first semiconductor switching element group, the second semiconductor switching element group, and the third semiconductor switching element group.
8. The three-level power cell module of claim 1, wherein the heat sink is one of a liquid-cooled heat sink, a heat pipe heat sink, and a heat sink substrate.
9. The three-level power cell module of claim 8, wherein the length and width of the heat sink match the physical dimensions of the matrix arrangement of the first, second, and third groups of semiconductor switching elements.
10. A frequency converter, characterized in that it comprises a three-level power cell module according to any of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202122006635.0U CN215817941U (en) | 2021-08-24 | 2021-08-24 | Three-level power unit module and frequency converter |
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| CN202122006635.0U CN215817941U (en) | 2021-08-24 | 2021-08-24 | Three-level power unit module and frequency converter |
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| CN215817941U true CN215817941U (en) | 2022-02-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116613596A (en) * | 2023-06-20 | 2023-08-18 | 格至控智能动力科技（上海）有限公司 | Laminated busbar and power device |
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2021
- 2021-08-24 CN CN202122006635.0U patent/CN215817941U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116613596A (en) * | 2023-06-20 | 2023-08-18 | 格至控智能动力科技（上海）有限公司 | Laminated busbar and power device |
| CN116613596B (en) * | 2023-06-20 | 2024-03-19 | 格至控智能动力科技（上海）有限公司 | Laminated busbar and power device |
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