CN215638793U - 一种金属熔化炉炉底结构 - Google Patents
一种金属熔化炉炉底结构 Download PDFInfo
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- CN215638793U CN215638793U CN202120490933.9U CN202120490933U CN215638793U CN 215638793 U CN215638793 U CN 215638793U CN 202120490933 U CN202120490933 U CN 202120490933U CN 215638793 U CN215638793 U CN 215638793U
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- 230000008018 melting Effects 0.000 title claims abstract description 31
- 238000002844 melting Methods 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 title claims abstract description 14
- 239000011449 brick Substances 0.000 claims abstract description 186
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 21
- 239000010959 steel Substances 0.000 claims abstract description 21
- 238000010276 construction Methods 0.000 claims abstract description 6
- 238000009991 scouring Methods 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical class O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
- 239000011819 refractory material Substances 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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Abstract
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CN202120490933.9U CN215638793U (zh) | 2021-03-08 | 2021-03-08 | 一种金属熔化炉炉底结构 |
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Address after: 067000 Chenggang No.1 office building, Luanhe Town, Shuangluan District, Chengde City, Hebei Province Patentee after: HBIS Chengde Vanadium & Titanium New Material Co.,Ltd. Patentee after: CHENGDE BRANCH OF HBIS Group Patentee after: Hebei Yanshan vanadium titanium industry technology research Co.,Ltd. Address before: 067000 Chenggang No.1 office building, Luanhe Town, Shuangluan District, Chengde City, Hebei Province Patentee before: Hegang Chengde vanadium titanium New Material Co.,Ltd. Patentee before: CHENGDE BRANCH OF HBIS Group Patentee before: Hebei Yanshan vanadium titanium industry technology research Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |