CN215560652U - Multi-channel gas injector with serial cooling chambers - Google Patents

Multi-channel gas injector with serial cooling chambers Download PDF

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Publication number
CN215560652U
CN215560652U CN202022411353.4U CN202022411353U CN215560652U CN 215560652 U CN215560652 U CN 215560652U CN 202022411353 U CN202022411353 U CN 202022411353U CN 215560652 U CN215560652 U CN 215560652U
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gas
cooling chamber
cooling
pipe
gas injector
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吴铭钦
刘峰
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Suzhou Yuzhu Electromechanical Co ltd
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Suzhou Yuzhu Electromechanical Co ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45572Cooled nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The application is a multi-runner gas injector with serial cooling chambers, which comprises a plurality of layers of cooling chambers annularly arranged in an injection shell, wherein the top of the side wall of each cooling chamber is provided with at least one overflow opening to communicate with the adjacent cooling chambers, a plurality of exhaust pipes are respectively arranged in each cooling chamber, and the openings of the exhaust pipes are exposed out of the injection shell. This application can make each blast pipe soak in the coolant liquid, reaches the effect of whole blast pipe accuse temperature, and the blast pipe salient in the multithread way gas injector bottom of serial-type cooling chamber, and the interior concave structure of collocation brilliant seat (susceptor), can effectively sweep away the dust and the deposit at wafer edge, promotes the product and makes the yield.

Description

Multi-channel gas injector with serial cooling chambers
Technical Field
The present invention relates to wafer plating technology, and is especially one kind of multi-channel gas injector with serial cooling chambers.
Background
As semiconductor technology advances, semiconductor processing technology has become more mature, so that electronic devices composed of more semiconductors can be made more sophisticated and have more functions.
The semiconductor technology processes are subject to photolithography, etching, diffusion and then the film formation. In a thin film deposition process, a semiconductor wafer is placed in a vacuum reaction chamber, and a reaction gas is horizontally injected onto the wafer by a gas injector, so that a thin film is deposited on the wafer by a physical or chemical reaction caused by heating.
In the deposition process, in order to avoid the gas injector from being affected by high temperature when the wafer is heated, a water cooling device is conventionally disposed at the outer edge of the gas injection pipe of the gas injector to reduce the temperature of the gas injector. However, the water cooling device can only cover the outermost gas nozzle and cannot effectively cool the gas nozzle on the inner layer of the gas injector, so that the overall temperature control effect is poor.
In addition, the current injector is designed to inject the gas source in a horizontal manner 360 degrees around, so that the deposition of the thin film is prone to have dead flow angle, for example, the upper edge of the side edge of the wafer is the front end contacting the gas, so that the reactant is particularly easy to accumulate, and dust is easy to accumulate after a long time. And the area is the upstream section of the film forming area, once dust is generated, the dust is easily blown to the surface of the whole wafer along with the air flow, so that the chip forms dust particle defects, and the process yield is influenced.
In view of the above, the present disclosure provides a multi-channel gas injector with serial cooling chambers to overcome the above problems.
SUMMERY OF THE UTILITY MODEL
It is a primary objective of the embodiments of the present disclosure to provide a multi-channel gas injector with serial cooling chambers, which can enable each exhaust pipe to be immersed in a cooling liquid, so as to achieve the effect of controlling the temperature of the entire exhaust pipe.
Another objective of the present disclosure is to provide a multi-channel gas injector with serial cooling chambers, which has a shared gas flow channel that can be used as a purging flow channel or a cleaning etching flow channel, and the gas flow channel protrudes out of the bottom of the multi-channel gas injector with serial cooling chambers, and cooperates with a concave structure of a susceptor (susceptor), so as to effectively purge dust and deposits on the edge of a wafer and improve the yield of product manufacture.
It is another object of the present disclosure to provide a multi-channel gas injector with serial cooling chambers, which can make cooling water flow only in a single direction through the arrangement of the partition plates, thereby preventing the cooling water from flowing back and greatly improving the cooling effect.
To achieve the above objectives, the present disclosure provides a multi-channel gas injector with serial cooling chambers, which includes a plurality of cooling chambers annularly disposed inside an injection housing, at least one overflow opening disposed on a top of a sidewall of each cooling chamber for communicating with adjacent cooling chambers, and a plurality of exhaust pipes disposed inside each cooling chamber, wherein an opening of each exhaust pipe is exposed outside the injection housing.
In this embodiment, the injection housing may be a stepped injection housing, such that the length of the sidewall of each cooling chamber gradually increases from inside to outside.
In this embodiment, each cooling chamber bottom still is equipped with gaseous drainage dish, the opening of many blast pipes of perpendicular to drainage blast pipe combustion gas, and the interior overflow space that has of gaseous drainage dish, overflow space intercommunication cooling chamber.
In this embodiment, each cooling chamber is further provided with at least one partition for partitioning the cooling chamber.
In this embodiment, the exhaust pipes include a shared exhaust pipe disposed at the center of the injection housing, and the shared exhaust pipe penetrates out of the injection housing.
In this embodiment, the gas injector with the serial cooling chamber further includes an adapter, the adapter includes an input joint and a shunt joint, and the input joint is provided with a plurality of gas pipes, at least one first liquid pipe and at least one first liquid discharge pipe. The flow dividing joint is provided with a plurality of air flow channels, at least one second liquid conveying pipe and at least one second liquid discharging pipe, the air flow channels are respectively communicated with the gas conveying pipe and the exhaust pipes so as to input different gases to the exhaust pipes; the second liquid conveying pipe is respectively communicated with the first liquid conveying pipe and the innermost layer cooling chamber so as to input cooling liquid; the second liquid discharge pipe is respectively communicated with the first liquid discharge pipe and the outermost layer cooling chamber to discharge cooling liquid.
In this embodiment, a filter screen is further disposed between each of the gas guiding plates.
For a better understanding and appreciation of the structural features and advantages of the embodiments disclosed herein, reference should be made to the drawings, which form a further part hereof, and to the accompanying detailed description, in which there is illustrated and described a preferred embodiment.
Drawings
Fig. 1 is a perspective view of an embodiment of the present disclosure.
Fig. 2 is an exploded view of an assembly of an embodiment of the present disclosure.
Fig. 3 is a cross-sectional side view of an embodiment of the present disclosure.
Fig. 4 is a schematic view of an overflow status surface of an embodiment of the disclosure.
FIG. 5 is a schematic top view of a jet housing in an overflow condition according to an embodiment of the disclosure.
Fig. 6 is a schematic side view of an airflow state according to an embodiment of the disclosure.
The labels in the figures illustrate:
1 a multi-channel gas injector with serial cooling chambers;
10 spraying the shell;
12a cooling chamber;
12a innermost cooling chamber;
12b an outermost cooling chamber;
12c a cooling chamber;
12d a cooling chamber;
120 overflow openings;
120a overflow opening;
120c an overflow opening;
122 gas diversion plates;
122a gas guiding plate;
122c a gas tray;
124 an overflow space;
124a overflow space;
124c overflow space;
14 an exhaust pipe;
140 share an exhaust pipe;
142 an inner sleeve;
16 a partition plate;
18 a filter screen;
20 an adapter;
22 an input connector;
220 air delivery pipe;
222 a first infusion tube;
224 a first drain pipe;
a 24 tap joint;
240 airflow channels;
242 an exhaust opening;
244 a second infusion tube;
246 second drain;
30, a crystal seat;
32 a wafer recess;
34 wafer.
Detailed Description
The multi-channel gas injector with the tandem cooling chambers in the embodiment of the disclosure can be used for connecting a film deposition gas output system to be used as a spray head to inject different gases, so as to perform film deposition on a wafer.
Referring to fig. 1 to 3, a multi-channel gas injector 1 with serial cooling chambers includes an injection housing 10 connected to a joint 20. In the present embodiment, the injection housing 10 is a circular injection housing, but the injection housing 10 may also be a square or triangular injection housing, and the shape is not limited. In this embodiment, a plurality of cooling chambers 12 are concentrically arranged in the spray casing 10, and at least one overflow opening 120 is formed at the top of the sidewall of each cooling chamber 12 to communicate with the adjacent cooling chambers 12, so that the cooling liquid contained in the cooling chambers 12 can overflow to the adjacent cooling chambers 12, thereby achieving the purpose of connecting the cooling chambers 12 in series. A plurality of exhaust pipes 14 are further arranged in the injection casing 10 and are respectively arranged in each cooling chamber 12, and openings of the exhaust pipes 14 are exposed out of the injection casing 10; through the arrangement of the above structure, when the cooling chamber 12 is filled with the cooling liquid, all the exhaust pipes 14 can be immersed in the cooling liquid, so as to achieve the effect of controlling the temperature. The adapter 20 provides the multi-channel gas injector 1 with the serial cooling chamber to connect with the thin film deposition gas output system (not shown) and the water cooling system (not shown) so as to provide the multi-channel gas injector 1 with the serial cooling chamber to inject the deposited gas and the cooling liquid.
With continued reference to fig. 1-3, the structure of the injection housing 10 and the adapter 20 will be described in detail. In the present embodiment, the injection housing 10 may be a stepped injection housing, such that the length of the sidewall of each cooling chamber 12 gradually increases from the outer ring to the inner ring, and similarly, the length of the exhaust pipe 14 in the cooling chamber 12 also gradually increases according to the sidewall of the cooling chamber 12. Referring to fig. 3, a gas guiding plate 122 is further disposed at the bottom of each cooling chamber 12, the gas guiding plate 122 is vertically connected to the cooling chamber 12, an overflow space 124 is disposed in the gas guiding plate 122, the overflow space 124 is communicated with the cooling chamber 12, and each gas guiding plate 122 is vertically disposed below the openings of the plurality of exhaust pipes 14, because the spraying housing 10 is stepped, the gas guiding plate 122 is located just below the exhaust pipes 14 to guide the gas discharged from the exhaust pipes 14, so that the gas sprayed from the exhaust pipes 14 can be sprayed in a horizontal manner. Referring to fig. 2, at least one partition 16 is further disposed on a sidewall of each cooling chamber 12 to divide each cooling chamber 12 into two regions, and the partition 16 can prevent the heat-exchanged liquid from flowing freely in the cooling chamber 12 and interfering with the flow direction of the cooling liquid.
With continued reference to fig. 1-3, to describe the structure of the exhaust pipe 14 of the injection housing 10, in the embodiment, the inner diameter of the exhaust pipe 14 is less than or equal to four millimeters (mm), the exhaust pipe 14 can be a metal pipe body with fast heat conduction, such as a copper exhaust pipe, and the wall thickness of the exhaust pipe 14 is 0.5 mm to 2.5 mm. Because the exhaust pipe 14 is made of a material with fast heat conduction and thin thickness, the temperature conduction is faster, so that the exhaust pipe 14 can be effectively cooled by the cooling liquid in the cooling chamber 12, and the temperature control effect is better. Referring to fig. 3, in the present embodiment, a filter 18 is further disposed between each of the gas guiding disks 122, and the filter 18 may be a metal filter to block gas pressure resistance generated by the gas discharged from the gas discharging pipe 14, and simultaneously, to avoid uneven gas injection caused by directly rushing out the ejected gas. In the present embodiment, the exhaust pipes 14 include a shared exhaust pipe 140 disposed at the center of the injection housing 10, and the shared exhaust pipe 14 penetrates through the bottom of the injection housing 10 to serve as a shared channel for a sweeping flow channel and a clean Etching (Cleaning Etching) flow channel.
Referring to fig. 1 to 3, the structure of the adapter 20 is described in detail, and the adapter 20 includes an input connector 22 and a shunt connector 24. The input connector 22 is provided with a plurality of air pipes 220, at least one first liquid pipe 222 and at least one first liquid discharging pipe 224, the plurality of air pipes 220 are connected with a film deposition gas output system (not shown), and the first liquid pipe 222 and the first liquid discharging pipe 224 are connected with a water cooling system (not shown). The shunt joint 24 is connected with the input joint 22, the shunt joint 24 is provided with a plurality of gas flow channels 240, each gas flow channel 240 is respectively communicated with the gas pipe 220, the bottom of each gas flow channel 240 is also provided with a plurality of gas exhaust openings 242, and the plurality of gas exhaust openings 242 are respectively communicated with the gas exhaust pipe 14 on the injection shell 10 so as to input different gases to the plurality of gas exhaust pipes 14; the branch joint 24 is further provided with at least one second liquid pipe 244 for respectively communicating the first liquid pipe 222 and the innermost cooling chamber 12a to supply the cooling liquid, and at least one second liquid pipe 246 for respectively communicating the first liquid pipe 224 and the outermost cooling chamber 12b to discharge the cooling liquid.
In describing the multi-channel gas injector 1 with serial cooling chambers, referring to fig. 4 and 5, to describe the overflow state of the coolant in the cooling chamber 12 of the multi-channel gas injector 1 of the serial cooling chamber, the coolant is first circulated to the second liquid pipe 244 of the tap 24 through the first liquid pipe 222 of the input joint 22 connected to the water cooling system (not shown) via the adapter 20 and then flows into the innermost cooling chamber 12a, because of the baffle 16 in the innermost cooling chamber 12a, the coolant initially flows only on the half side of the innermost cooling chamber 12a, until it enters the overflow space 124a of the gas guiding disk 122a communicating with the innermost cooling chamber 12a, the cooling liquid will overflow to the other half side of the innermost cooling chamber 12a through the overflow space 124a, and after the other half side of the innermost cooling chamber 12a is full, the cooling liquid will overflow to the other cooling chamber 12c through the overflow opening 120 a. Similarly, since the partition 16 is also provided in the cooling chamber 12c, the coolant initially flows only on the half side of the cooling chamber 12c, until the coolant enters the overflow space 124c of the gas guiding plate 122c communicating with the cooling chamber 12c, the coolant will overflow to the other half side of the cooling chamber 12c through the overflow space 124c, and after the other half side of the cooling chamber 12c is full, the coolant will overflow to the next cooling chamber 12d through the overflow opening 120 c. Next, each flow method is the same and will not be repeated.
Finally, when the cooling water overflows the outermost cooling chamber 12b, the cooling water flows back to the water cooling system (not shown) through the second drain pipe 246 of the branch joint 24 and the first drain pipe 224 of the input joint 22, so as to achieve the effect of cooling water circulation. Of course, two sets of liquid delivery pipes and liquid discharge pipes may be provided, and more than two sets of serial cooling chambers may be provided in the injection housing 10, which is not limited herein. In addition, the partition 16 of the present embodiment can make the cooling water flow only in a single direction, so as to prevent the cooling water from flowing back and greatly improve the cooling effect.
Referring to fig. 6, the gas exhaust method is described, wherein the gas pipes 220 of the input connector 22 of the adapter 20 are connected to a film deposition gas output system (not shown), in this embodiment, different gas pipes 220 can be connected to different gas output devices of the film deposition gas output system to output different gases. The gas then flows into the gas flow channel 240 of the tap 24 and then flows out to the gas outlet pipe 14 on the injection housing 10 through the plurality of gas outlet openings 242 on the gas flow channel 240. Because the filter screen 18 is arranged between the gas guiding discs 122, gas pressure resistance caused by gas discharged from the gas exhaust pipe 14 can be prevented, and the problem of uneven gas injection caused by direct flushing of the sprayed gas can be avoided. In addition, after the gas is discharged from the exhaust pipe 14, the gas contacts the gas guiding plate 122, so that the gas ejected from the exhaust pipe 14 can be ejected horizontally.
The plurality of exhaust pipes 14 are provided with a shared exhaust pipe 140, the shared exhaust pipe 140 can be used as a purging flow channel or a cleaning etching flow channel, and the shared exhaust pipe 140 is connected to a thin film deposition gas output system (not shown) for introducing an etching gas such as hydrogen chloride or chlorine. Since the shared exhaust pipe 140 protrudes from the bottom of the injection housing 10 and the gas guiding plate 122 of the serial cooling chamber, when the etching gas is exhausted, the etching gas rises along the edge of the wafer recess 32 by the concave structure of the wafer recess 32 of the susceptor 30(susceptor), so that the gas flow of the etching gas can contact the edge of the wafer 34, and the dust and the deposit accumulated on the edge of the wafer can be effectively removed. In addition, an inner sleeve 142 can be provided in the shared exhaust pipe 140, and the gas in the inner sleeve 142 can be separated from the gas outside the inner sleeve 142, so as to avoid mixing of different gases and generation of chemical reaction.
To sum up, this disclosed embodiment can make each blast pipe soak in the coolant liquid, reaches the effect of whole blast pipe accuse temperature, and can make the cooling water only flow toward single direction through setting up of baffle, the cooling water backward flow that can avoid to promote refrigerated efficiency by a wide margin. In addition, the exhaust pipe of the embodiment of the disclosure has a shared airflow channel which can be used as a purging flow channel or a cleaning etching flow channel, and the airflow channel protrudes out of the bottom of the multi-flow-channel gas ejector of the serial cooling chamber and is matched with the concave structure of the susceptor (susceptor), so that dust and deposits at the edge of a wafer can be effectively purged, and the manufacturing yield of products is improved.
The above-described embodiments are merely preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, all the equivalent changes or modifications of the features and the spirit described in the scope of the application of the present invention should be included in the claims.

Claims (8)

1. A multi-flow gas injector with tandem cooling chambers, comprising:
the spray casing is internally provided with a plurality of layers of cooling chambers in an annular mode, and the top of the side wall of each cooling chamber is provided with at least one overflow opening so as to communicate with the adjacent cooling chambers; and
a plurality of exhaust pipes arranged in each cooling chamber, wherein the openings of the exhaust pipes are exposed out of the injection shell; each the bottom of cooling chamber still is equipped with gaseous drainage dish, the opening of many blast pipes of perpendicular to, in order to drain the blast pipe combustion gas, just overflow space has in the gaseous drainage dish, overflow space intercommunication the cooling chamber, and each still be equipped with an at least baffle in the cooling chamber, in order to separate the cooling chamber.
2. The multiple flow passage gas injector with serial cooling chambers as claimed in claim 1, wherein said injection housing is a stepped injection housing, such that the length of said sidewall of each cooling chamber is gradually increased from outside to inside.
3. The multiple flow passage gas injector with serial cooling chambers as claimed in claim 1, wherein the plurality of exhaust pipes comprises a shared exhaust pipe disposed at the center of the injection housing, and the shared exhaust pipe penetrates out of the bottom of the injection housing.
4. The multiple pass gas injector with tandem cooling chamber of claim 3 wherein an inner sleeve is further provided within the shared exhaust pipe.
5. The multiple flow passage gas injector with tandem cooling chamber of claim 1, further comprising an adapter, the adapter comprising:
the input joint is provided with a plurality of gas transmission pipes, at least one first liquid transmission pipe and at least one first liquid discharge pipe; and
the flow dividing joint is provided with a plurality of air flow channels, at least one second liquid conveying pipe and at least one second liquid discharging pipe, the air flow channels are respectively communicated with the gas conveying pipes and the gas discharging pipes so as to input different gases to the gas discharging pipes; the second infusion tube is respectively communicated with the first infusion tube and the cooling chamber at the innermost layer so as to input cooling liquid; the second liquid discharge pipe is respectively communicated with the first liquid discharge pipe and the cooling chamber on the outermost layer to discharge the cooling liquid.
6. The multiple flow passage gas injector with serial cooling chambers as claimed in claim 5, wherein said gas flow passage further has a plurality of exhaust openings, and said plurality of exhaust openings are respectively connected to a plurality of exhaust pipes.
7. The multi-channel gas injector with tandem cooling chambers according to claim 1, wherein the inner diameter of the exhaust pipe is less than or equal to four millimeters, and the pipe wall of the exhaust pipe can be 0.5 millimeters to 2.5 millimeters.
8. A multi-channel gas injector with tandem cooling chambers as claimed in claim 1, wherein a screen is further disposed between each of said gas guiding disks.
CN202022411353.4U 2020-04-13 2020-10-27 Multi-channel gas injector with serial cooling chambers Active CN215560652U (en)

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