CN215451417U - Light-emitting unit, display array module and display device - Google Patents

Abstract

The utility model relates to a light-emitting unit, a display array module and a display device. The utility model provides a light emitting unit. The light emitting unit includes an N-type semiconductor layer, a P-type semiconductor layer, an active layer, and a light extraction structure. The active layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer. The light extraction structure is at least partially disposed at a side of the P-type semiconductor layer and configured to reflect and/or scatter light radiated from the active layer. The light emitting unit reflects and/or scatters the light emitted by the active layer from the side face of the P-type semiconductor layer through the light extraction structure arranged on the side face of the P-type semiconductor layer, so that the light is emitted towards the position right above the surface of the P-type semiconductor layer, which is away from the active layer, the light loss degree is reduced, and the light emitting efficiency is improved. When a plurality of light-emitting units are combined into an array, the light extraction structure of any light-emitting unit can reflect some light rays emitted by the active layer of another light-emitting unit, so that the light-emitting efficiency of the light-emitting units combined into the array is improved.

Description

Light-emitting unit, display array module and display device

Technical Field

The utility model relates to the technical field of display, in particular to a light-emitting unit, a display array module and a display device.

Background

As a new Light source, Light-Emitting diodes (LEDs) have been developed unprecedentedly due to their advantages of environmental protection, energy saving, long life, fast start-up speed, etc. With the development of led technology, people have higher requirements for led brightness.

The brightness of the light emitting diode depends on the luminous efficiency of the light emitting unit of the light emitting diode. Light emitted from the side surface of the P-type semiconductor layer by the active layer of the conventional light-emitting unit is easy to dissipate, so that the light emitting amount of the front surface of the light-emitting unit is greatly influenced, the light extraction efficiency of the light-emitting unit is low, the light-emitting efficiency of the light-emitting unit is low, and the brightness of the light-emitting diode is unsatisfactory.

Therefore, how to prevent the light emitted from the side surface of the P-type semiconductor layer by the active layer of the light emitting unit from escaping is an urgent problem to be solved.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a light emitting unit, a display array module and a display device, which are capable of solving the problem of light emitted from the side surface of a P-type semiconductor layer by an active layer of the light emitting unit escaping.

In a first aspect, the present invention provides a light emitting unit comprising:

an N-type semiconductor layer;

a P-type semiconductor layer;

the active layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer; and

and a light extraction structure at least partially disposed at a side of the P-type semiconductor layer and configured to reflect and/or scatter light radiated from the active layer.

The light emitted from the side face of the P-type semiconductor layer by the active layer is reflected and/or scattered by the light extraction structure arranged on the side face of the P-type semiconductor layer, so that the reflected and/or scattered light is emitted towards the position right above the surface of the P-type semiconductor layer deviating from the active layer, the light loss degree is effectively reduced, the light extraction efficiency of the light emitting unit is greatly improved, and the light emitting efficiency is greatly improved. When a plurality of light-emitting units are combined into an array, the light extraction structure of any one light-emitting unit can reflect and/or scatter some light rays emitted by the active layer of another light-emitting unit, so that the light-emitting efficiency of the light-emitting units combined into the array is effectively improved.

Optionally, the light extraction structure includes a transparent dielectric layer and scattering particles mixed in the transparent dielectric layer. Therefore, light emitted by the active layer from the side face of the P-type semiconductor layer can be emitted into the transparent medium layer and scattered and reflected in the transparent medium layer mixed with scattering particles, the utilization rate of the light by the light extraction structure is improved, and the light extraction efficiency of the light emitting unit is improved.

Optionally, the transparent medium layer includes liquid glass, and the scattering particles include any one of SiO2 particles, TiO2 particles, Al2O3 particles, or glass hollow particles.

Optionally, the light extraction structure further includes a reflective layer disposed on a surface of the transparent dielectric layer away from the P-type semiconductor layer. Therefore, the light emitting unit can reflect the light emitted by the active layer from the side surface of the P-type semiconductor layer through the reflecting layer, so that the reflected light is emitted towards the position right above the surface of the P-type semiconductor layer away from the active layer, and the dissipation degree of the light is effectively reduced. When a plurality of light-emitting units are combined into an array, the reflecting layer of any one light-emitting unit can reflect some light rays emitted by the active layer of another light-emitting unit, so that the light-emitting efficiency of the light-emitting units combined into the array is effectively improved.

Optionally, the cross-sectional shape of the transparent dielectric layer is an inverted right triangle, and a longer right-angle side of the inverted right triangle is in contact with the P-type semiconductor layer. In this way, the light extraction structure of the light emitting unit is facilitated to reflect the light emitted from the side surface of the P-type semiconductor layer by the active layer to the position right above the surface of the P-type semiconductor layer away from the active layer.

Optionally, the included angle between the hypotenuse of the inverted triangle and the longer cathetus is in the range of 5 to 20 degrees. Therefore, the light extraction structure of the light-emitting units can reflect light rays emitted by the active layer to expectation, and when the plurality of light-emitting units are combined into the array, light emitted by the active layer of any light-emitting unit can be reflected to expectation by the light extraction structure of another light-emitting unit, so that the light-emitting efficiency of the plurality of light-emitting units combined into the array can be improved.

Optionally, the refractive index of the transparent medium layer is between that of air and that of the P-type semiconductor layer. Therefore, the light emitted by the active layer can be prevented from being totally reflected at the junction of the transparent medium layer and the P-type semiconductor layer, the light emitted by the active layer can be favorably emitted into the transparent medium layer from the P-type semiconductor layer, and the luminous efficiency of the light-emitting unit can be favorably improved.

Optionally, the side surface of the P-type semiconductor layer includes a plurality of patterns, each of the patterns includes a plurality of inclined surface regions and a bottom region adjacent to the inclined surface regions. The design of the pattern effectively reduces the probability of total reflection of the light emitted by the active layer at the junction of the transparent medium layer and the P-type semiconductor layer, is beneficial to emitting the light emitted by the active layer from the side surface of the P-type semiconductor layer, improves the utilization rate of the light, improves the light extraction efficiency of the light-emitting unit, and further improves the light-emitting efficiency of the light-emitting unit.

Optionally, the light radiated by the active layer is ultraviolet light, and the wavelength of the ultraviolet light is between 320nm and 400 nm;

or, between 280nm-320 nm;

or, between 200nm and 280 nm.

In a second aspect, the present invention provides a display array module, which includes:

a substrate; and

the plurality of light emitting units according to any one of the first aspect, the plurality of light emitting units being respectively disposed on the substrate at intervals.

The design of the light-emitting units of the display array module not only improves the light extraction efficiency of each light-emitting unit, but also enables any one light-emitting unit to reflect and/or scatter light emitted by another light-emitting unit, and greatly improves the light-emitting efficiency of the display array module.

In a third aspect, the present invention provides a display device comprising:

a drive circuit; and

the display array module as described in the second aspect; the driving circuit is electrically connected with the display array module.

Drawings

Fig. 1 is a schematic structural diagram of a display array module according to an embodiment of the present invention.

Fig. 2 is an enlarged schematic view of a portion II of the light emitting unit in fig. 1.

Fig. 3 is a partial structural schematic view of another embodiment of the light emitting unit in fig. 1.

Fig. 4 is a partial structural view of another embodiment of the light emitting unit in fig. 1.

Fig. 5 to 11 are schematic structural views of a display array module manufactured by the manufacturing method of the present invention.

Description of reference numerals:

100-display array module, 10-substrate, 11-front side, 12-back side;

20-a light emitting unit;

a 21-N type semiconductor layer;

22-P-type semiconductor layer, 221-pattern, 2211-sloped region, 2212-bottom region;

23-active layer, L1-first incident ray, L2-second incident ray;

l3-second incident ray, L4-second reflected ray;

l5-third incident ray, L6-third reflected ray;

24-a light extraction structure;

241-transparent medium layer, 2411-first right-angle side, 2412-second right-angle side and 2413-oblique side;

2415-upper base, 2416-lower base;

242-a reflective layer, 2421-a first reflective surface, 2422-a second reflective surface;

30-growth substrate, 40-temporary substrate, 50-intermediate layer, 60-adhesion layer.

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

Referring to fig. 1, an embodiment of the utility model provides a display array module 100, which includes a substrate 10 and a plurality of light emitting units 20, wherein the plurality of light emitting units 20 are respectively disposed on the substrate 10 at intervals.

The design of the light emitting units 20 of the display array module 100 not only improves the light extraction efficiency of each light emitting unit 20, but also allows any one of the light emitting units 20 to reflect and/or scatter light emitted by another light emitting unit 20, thereby greatly improving the light emitting efficiency of the display array module 100. The light-emitting unit 20 is specifically designed, please refer to the following.

In the present embodiment, the substrate 10 includes a front surface 11 and a back surface 12 opposite to each other along a first direction, and the plurality of light emitting units 20 are disposed on the front surface 11 of the substrate 10 at intervals along a second direction. The light emitting units 20 can be distributed on the front surface 11 of the substrate 10 in a planar array including, but not limited to, a rectangle, a circle, a triangle, a wave, a line, etc., and can be flexibly arranged as required. Note that the first direction refers to a direction parallel to the thickness direction of the substrate 10, and the second direction refers to a direction perpendicular to the first direction. The terms "first" and "second", etc. are used for convenience of description only and are not to be construed as limiting the present invention.

Referring to fig. 1 and fig. 2, the present invention provides a light emitting unit 20 for a light emitting diode, including:

an N-type semiconductor layer 21;

a P-type semiconductor layer 22;

an active layer 23 provided between the N-type semiconductor layer 21 and the P-type semiconductor layer 22; and

a light extraction structure 24, the light extraction structure 24 being at least partially disposed at a side of the P-type semiconductor layer 22, configured to reflect and/or scatter light radiated from the active layer 23.

The light emitted from the side surface of the P-type semiconductor layer 22 by the active layer 23 is reflected and/or scattered by the light extraction structure 24 arranged on the side surface of the P-type semiconductor layer 22 by the light emitting unit 20, so that the reflected and/or scattered light is emitted towards the position right above the surface of the P-type semiconductor layer 22 deviating from the active layer 23, the light dissipation degree is effectively reduced, the light extraction efficiency of the light emitting unit 20 is greatly improved, and the light emitting efficiency is greatly improved. Moreover, when a plurality of light emitting units 20 are combined into an array, that is, in the display array module 100, the light extraction structure 24 of any one light emitting unit 20 can also reflect and/or scatter some light emitted by the active layer 23 of another light emitting unit 20, thereby effectively improving the light emitting efficiency when the light emitting units 20 are combined into an array.

In the present embodiment, the Light Emitting Diode applied to the Light Emitting unit 20 is an Ultraviolet Light Emitting Diode (UV LED) based on a group III nitride (III-nitride) wide bandgap semiconductor material. All the following are described based on this. The active layer 23 radiates ultraviolet light outwards, and the P-type semiconductor layer 22 is a P-type GaN (gallium nitride) layer which has a strong absorption effect on the ultraviolet light. Thus, compared to the conventional light emitting cell array of the uv led, when the light emitting cells 20 of the present embodiment are combined into an array, that is, in the display array module 100, the light extraction structure 24 of any light emitting cell 20 reflects and/or scatters the uv light radiated by the active layer 23 of another light emitting cell 20, and the P-type semiconductor layer 22 of any light emitting cell 20 can be prevented from absorbing the uv light radiated by the active layer 23 of another light emitting cell 20, so that the light emitting efficiency when the light emitting cells 20 are combined into an array is effectively improved, that is, the light emitting efficiency of the display array module 100 is effectively improved.

It should be noted that the ultraviolet light emitting diode is prepared by using an AlGaN (aluminum gallium nitride) material as a core material, and the AlxGa1-xN material is a wide bandgap direct bandgap semiconductor material. By adjusting the Al composition in the ternary compound AlGaN, the continuous change of the AlGaN bandgap can be realized, so that the active layer 23 radiates ultraviolet light in a certain wavelength range outward.

It is understood that, in the present embodiment, the light radiated by the active layer 23 is ultraviolet light, and the wavelength of the ultraviolet light is between 320nm and 400 nm;

or, between 280nm-320 nm;

or, between 200nm and 280 nm.

When the wavelength of the ultraviolet light radiated by the active layer 23 is between 320nm and 400nm, the light radiated by the active layer 23 is long-wave ultraviolet light (UVA); when the wavelength of the ultraviolet light radiated by the active layer 23 is between 280nm-320nm, the light radiated by the active layer 23 is medium wave ultraviolet light (UVB); when the wavelength of the ultraviolet light radiated from the active layer 23 is between 200nm and 280nm, the light radiated from the active layer 23 is short wavelength ultraviolet light (UVC).

In other embodiments, the light emitting diode used in the light emitting unit 20 may be another type of light emitting diode, that is, the light radiated by the active layer 23 may also be light of other different wavelengths such as infrared.

Referring to fig. 1 and fig. 2, in the present embodiment, the light extraction structure 24 is disposed around the side surface of the P-type semiconductor layer 22, that is, the side surface of the P-type semiconductor layer 22 is completely covered by the light extraction structure 24. The light extraction structure 24 surrounding the side surface of the P-type semiconductor layer 22 ensures that all light emitted from the side surface of the P-type semiconductor layer 22 by the active layer 23 can be utilized by the light extraction structure 24, thereby greatly improving the utilization rate of the light and being beneficial to improving the light extraction efficiency of the light emitting unit 20. In addition, the light extraction structure 24 enclosed on the side surface of the P-type semiconductor layer 22 is convenient to process and beneficial to improving the processing efficiency. Particularly, when a plurality of light emitting units 20 are combined into an array, a craftsman can form the light extraction structure 24 of the plurality of light emitting units 20 at one time, greatly improving the processing efficiency.

In other embodiments, the light extraction structure 24 may also be partially disposed on the side of the P-type semiconductor layer 22. It is also within the scope of the present invention to ensure that the side of the P-type semiconductor layer 22 of any one light emitting cell 20 is provided with the light extraction structure 24 at a position facing another light emitting cell 20 when the plurality of light emitting cells 20 are combined into an array, so that the light extraction structure 24 of any one light emitting cell 20 can reflect light radiated from the active layer 23 of another light emitting cell 20.

Referring to fig. 1 and 2, the light extraction structure 24 includes a transparent dielectric layer 241 and scattering particles (not shown) mixed in the transparent dielectric layer 241. Thus, the light emitted from the side surface of the P-type semiconductor layer 22 by the active layer 23 can be incident into the transparent dielectric layer 241, and is scattered and reflected in the transparent dielectric layer 241 mixed with the scattering particles, so that the utilization rate of the light by the light extraction structure 24 is improved, and the light extraction efficiency of the light emitting unit 20 is improved.

Optionally, the transparent medium layer 241 includes liquid glass, and the scattering particles include any one of SiO2 (silicon dioxide) particles, TiO2 (titanium dioxide) particles, Al2O3 (aluminum oxide) particles, or glass hollow particles. In this embodiment, the scattering particles are SiO2 particles, which facilitates ultraviolet light radiated from the active layer 23 to penetrate through the transparent dielectric layer 241, and facilitates improvement of the light emitting efficiency of the light emitting unit 20. It is understood that the scattering particles can be, but are not limited to, silicon nitride, aluminum nitride, and other ultraviolet light transparent particles.

Referring to fig. 1 and fig. 2, the light extraction structure 24 further includes a reflective layer 242, and the reflective layer 242 is disposed on a surface of the transparent dielectric layer 241 away from the P-type semiconductor layer 22. In this way, the light emitting unit 20 can reflect the light emitted from the side surface of the P-type semiconductor layer 22 by the active layer 23 through the reflective layer 242, so that the reflected light is emitted toward the surface of the P-type semiconductor layer 22 away from the active layer 23, thereby effectively reducing the light emission degree. When a plurality of light emitting units 20 are combined into an array, the reflective layer 242 of any one light emitting unit 20 can reflect some light emitted from the active layer 23 of another light emitting unit 20, thereby effectively improving the light emitting efficiency when the light emitting units 20 are combined into an array.

In the present embodiment, the reflective layer 242 includes a first reflective surface 2421 facing the P-type semiconductor layer 22 and a second reflective surface 2422 facing away from the P-type semiconductor layer 22, the light emitted from the active layer 23 is reflected out of the P-type semiconductor layer 22 by the first reflective surface 2421, and the external light is reflected by the second reflective surface 2422. In this way, the light emitted from the periphery of the P-type semiconductor layer 22 by the active layer 23 can be reflected by the first reflection surface 2421, so that the reflected light is emitted toward the surface of the P-type semiconductor layer 22 away from the active layer 23, and the light emitting efficiency is greatly improved. When a plurality of light emitting units 20 are combined into an array, the second reflecting surface 2422 of any one light emitting unit 20 can reflect ultraviolet light (i.e., external light) radiated by the active layer 23 of the adjacent light emitting unit 20 or another light emitting unit 20, so as to prevent the P-type semiconductor layer 22 of each light emitting unit 20 from absorbing the ultraviolet light radiated by the active layer 23 of another light emitting unit 20, thereby effectively improving the light emitting efficiency.

Specifically, in each light emitting cell 20, the light rays emitted from the periphery of the corresponding P-type semiconductor layer 22 by the active layer 23 include a first incident light ray L1 and a second incident light ray L2 emitted from two sides of the P-type semiconductor layer 22, respectively. The first incident light L1 is reflected by the first reflection surface 2421 of the reflection layer 242 to form a first reflected light L3. The second incident light L2 is reflected by the first reflection surface 2421 of the reflection layer 242 to form a second reflected light L4. The first reflected light L3 and the second reflected light L4 are both emitted toward the surface of the P-type semiconductor layer 22 away from the active layer 23, so that the dissipation degree of the light emitted from the periphery of the P-type semiconductor layer 22 by the active layer 23 is effectively reduced, and the light extraction efficiency and the light emitting efficiency of the light emitting unit 20 are greatly improved.

When the light emitting units 20 are combined into an array, that is, in the display array module 100, the active layer 23 of any one of the light emitting units 20 emits diffused light (i.e., the above-mentioned external light) that is radiated toward the surroundings and emitted to another light emitting unit 20, the diffused light includes the third incident light L5 emitted from the active layer 20 of any one of the light emitting units 20, and the third incident light L5 is emitted to the reflective layer 242 of another light emitting unit 20. The third incident light L5 is reflected by the second reflection surface 2422 of the reflection layer 242 to form a third reflected light L6, and the third reflected light L6 is emitted in a direction away from the front surface 11 of the substrate 10. This is beneficial to emit the light emitted from the active layer 23 of any light emitting unit 20 to another light emitting unit 20 in the direction away from the front surface 11 of the substrate 10, thereby reducing the light dissipation degree and improving the light emitting efficiency of the display array module 100. Moreover, in the present embodiment, the design of the second reflection surface 2422 can also prevent the P-type semiconductor layer 22 of any one of the light emitting units 20 from absorbing the ultraviolet light radiated by the active layer 23 of another one of the light emitting units 20, so as to effectively improve the light emitting efficiency when the light emitting units 20 are combined into an array, i.e., effectively improve the light emitting efficiency of the display array module 100.

Optionally, referring to fig. 2, the first reflection surface 2421 is parallel to the second reflection surface 2422. In this way, the first and second reflection surfaces 2421 and 2422 are conveniently arranged to reflect light to the expected direction, which is beneficial to improving the processing efficiency and reducing the processing cost.

Optionally, the reflective layer 242 is a metal reflective layer. The material of the metal reflecting layer can be gold, beryllium/gold, zinc/gold, tin/silver, silver material and other metals with high reflectivity.

Optionally, referring to fig. 2, the cross-sectional shape of the transparent dielectric layer 241 is an inverted right triangle, and a longer right-angle side of the inverted right triangle is in contact with the P-type semiconductor layer 22. In this way, it is advantageous for the light extraction structure 24 of the light emitting unit 20 to reflect the light emitted from the side of the P-type semiconductor layer 22 by the active layer 23 to a position directly above the surface of the P-type semiconductor layer 22 facing away from the active layer 23. Specifically, the cross-sectional shape of transparent dielectric layer 241 includes a first right-angle side 2411, a second right-angle side 2412 perpendicular to first right-angle side 2411, and a hypotenuse 2413 connecting first right-angle side 2411 and second right-angle side 2412. The length of the first right-angle side 2411 is greater than the length of the second right-angle side 2412. The first right-angle sides 2411 are flush with the side surfaces of the P-type semiconductor layer 22, the side surfaces of the P-type semiconductor layer 22 are parallel to the first direction, and the second right-angle sides 2412 are parallel to the second direction, so that the inverse right-angle triangle is formed. In this embodiment, the reflective layer 242 is disposed on the inclined edge 2413 of the transparent dielectric layer 241, so that the reflective layer 242 is disposed obliquely with respect to the side surface of the P-type semiconductor layer 22, and the reflective layer 242 disposed on the inclined edge 2413 can reflect the light emitted from the side surface of the P-type semiconductor layer 22 by the active layer 23 to a position right above the surface of the P-type semiconductor layer 22 away from the active layer 23, which is beneficial to improving the light emitting efficiency of the light emitting unit 20. Optionally, the length of the first right-angle side 2411 is less than or equal to the thickness of the P-type semiconductor layer 22, so as to prevent the transparent dielectric layer 21 from shielding the active layer 23 and interfering with the light emission of the active layer 23.

It is understood that, in other embodiments, referring to fig. 3, the cross-sectional shape of the transparent medium layer 241 may also be an inverted right trapezoid, wherein the upper base 2415 of the inverted right trapezoid is closer to the active layer 23 than the lower base 2416 thereof, the upper base 2415 is parallel to the lower base 2416, and the length of the lower base 2416 is greater than the length of the upper base 2415.

Further, referring to fig. 1 and fig. 2, an included angle (i.e., an included angle α) between the hypotenuse 2413 and the longer cathetus (i.e., the first cathetus 2411) of the inverse right triangle ranges from 5 degrees to 20 degrees. Thus, the light extraction structure 24 of the light emitting unit 20 is beneficial to reflect the light emitted from the active layer 23 to the expected, and when a plurality of light emitting units 20 are combined into an array, the light emitted from the active layer 23 of any one light emitting unit 20 is beneficial to be reflected to the expected by the light extraction structure 24 of another light emitting unit 20, so that the light emitting efficiency when a plurality of light emitting units 20 are combined into an array is improved. In the embodiment, the first right-angle side 2411 is disposed on the side surface of the P-type semiconductor layer 22, and the reflective layer 242 is disposed on the oblique side 2413, so that the angle between the reflective layer 242 and the side surface of the P-type semiconductor layer 22 is also α. By changing the angle α between the first right-angle side 2411 and the oblique side 2413 of the inverted right-angle triangle (i.e., the transparent dielectric layer 241), the angle between the reflective layer 242 and the side surface of the P-type semiconductor layer 22 can be changed, which facilitates the reflective layer 242 to reflect the light emitted from the side surface of the P-type semiconductor layer 22 by the active layer 23 to the position right above the surface of the P-type semiconductor layer 22 away from the active layer 23, and also facilitates the light emitted from the active layer 23 of another light-emitting unit 20 to be reflected to the desired position in the display array module 100.

It should be noted that, when a plurality of light emitting units 20 are combined into an array, that is, in the display array module 100, a value of an included angle α of any light emitting unit 20 is related to a distance between two adjacent light emitting units 20 and a distance between the active layer 23 of the corresponding light emitting unit 20 and the substrate 10, and theoretically, the smaller the distance between two adjacent light emitting units 20 is and/or the closer the active layer 23 of the light emitting unit 20 is to the substrate 10, the larger the reflection angle α is set.

Optionally, the refractive index of the transparent dielectric layer 241 is between the refractive index of air and the refractive index of the P-type semiconductor layer 22. Therefore, the light emitted from the active layer 23 can be prevented from being totally reflected at the boundary between the transparent dielectric layer 241 and the P-type semiconductor layer 22, which is beneficial for the light emitted from the active layer 23 to enter the transparent dielectric layer 241 from the P-type semiconductor layer 22, and is beneficial for improving the light emitting efficiency of the light emitting unit 20.

Alternatively, referring to fig. 4, the side surface of the P-type semiconductor layer 22 includes a plurality of patterns 221, and each of the patterns 221 includes a plurality of inclined surface regions 2211 and a bottom region 2212 adjacent to the inclined surface regions 2211. Due to the design of the pattern 221, the probability that light emitted by the active layer 23 is totally reflected at the junction of the transparent dielectric layer 241 and the P-type semiconductor layer 22 is effectively reduced, the light emitted by the active layer 23 is emitted from the side surface of the P-type semiconductor layer 22, the utilization rate of the light is improved, the light extraction efficiency of the light emitting unit 20 is improved, and the light emitting efficiency of the light emitting unit 20 is further improved. In the present embodiment, the plurality of patterns 221 on the side surface of the P-type semiconductor layer 22 are designed such that the side surface of the P-type semiconductor layer 22 is saw-toothed. In other embodiments, the side surface of the P-type semiconductor layer 22 may have other patterns such as a wave shape. It is understood that the P-type semiconductor layer 22 may be sidewall-roughened by means of an etching solution or the like to form the plurality of patterns 221.

Referring to fig. 1, the present invention further provides a display device (not shown) including a driving circuit and the display array module 100; the driving circuit is electrically connected to the display array module 100. Thus, the driving circuit can drive the light emitting units 20 of the display array module 100 to emit light. In the present invention, the display device may be a display device having a display effect and/or a touch effect, such as a mobile phone, a tablet computer, a notebook computer, and the like, which is not particularly limited. It should be noted that the display device may include only one display array module 100, or may include a plurality of display array modules 100 having the same size, or different sizes.

In addition, the present invention further provides a manufacturing method for manufacturing the display array module 100, which includes:

s10, referring to fig. 5, providing a growth substrate 30; sequentially growing an N-type semiconductor layer 21, an active layer 23 and a P-type semiconductor layer 22 in a first direction on a growth substrate 30; patterning is performed to form a plurality of light emitting stacks including the N-type semiconductor layer 21, the active layer 23, and the P-type semiconductor layer 22, which are spaced apart in the second direction, on the growth substrate 30. In the present embodiment, the light radiated from the active layer 23 is ultraviolet light. It will be appreciated that the wavelength of the ultraviolet light radiated by the active layer 23 can be controlled by controlling the content of the Al component in the light emitting stack.

S20, referring to fig. 5 and fig. 6, adhering the temporary substrate 40 on the surface of the P-type semiconductor layer 22 of all the light emitting stacks spaced apart from the active layer 23, so that the light emitting stacks are located between the growth substrate 30 and the temporary substrate 40; the growth substrate 30 is removed from all the N-type semiconductor layers 21 of the light emitting stacks arranged at intervals by a technique such as laser lift-off. At this time, a plurality of light emitting laminated layers are flip-chip mounted on the temporary substrate 40, and the temporary substrate 40 is turned over by 180 degrees so that the P-type semiconductor layer 22, the active layer 23, and the N-type semiconductor layer 21 of each light emitting laminated layer are sequentially laminated on the temporary substrate 40.

S40, referring to fig. 2 and 8, the intermediate layer 50 is filled on the surface of the temporary substrate 40 facing the P-type semiconductor layer 22 by ink-jet printing, so that the intermediate layer 50 is formed between each adjacent light-emitting stack. The height of the intermediate layer 50 is equal to the height of the P-type semiconductor layer 22, so as to prevent the intermediate layer 50 from shielding the active layer 23 and interfering with the light emission of the active layer 23. The height of the component a refers to the maximum distance between the opposite ends of the component a in the first direction.

Optionally, the middle layer 50 includes a transparent dielectric layer 241 and scattering particles (not shown) mixed in the transparent dielectric layer 241. The transparent dielectric layer 241 includes liquid glass, and the scattering particles include any one of SiO2 (silicon dioxide) particles, TiO2 (titanium dioxide) particles, Al2O3 (aluminum oxide) particles, or glass hollow particles. In this embodiment, the scattering particles are SiO2 particles, so that the ultraviolet light radiated from the active layer 23 can penetrate through the transparent dielectric layer 241. It is understood that the scattering particles can be, but are not limited to, silicon nitride, aluminum nitride, and other ultraviolet light transparent particles.

Optionally, between step S20 and step S40, the method further includes:

s30, referring to fig. 4 and fig. 7, the side surface of the P-type semiconductor layer 22 of each light emitting stack is roughened to form a plurality of patterns 221 on the side surface of the P-type semiconductor layer 22. Each of the patterns 221 includes a plurality of slant areas 2211 and a bottom area 2212 adjacent to the slant areas 2211. In the present embodiment, the plurality of patterns 221 on the side surface of the P-type semiconductor layer 22 are designed such that the side surface of the P-type semiconductor layer 22 is saw-toothed. In other embodiments, the side surface of the P-type semiconductor layer 22 may have other patterns such as a wave shape. In the present invention, the P-type semiconductor layer 22 may be subjected to a sidewall roughening treatment by means of an etching solution or the like.

Step S40 is followed by:

s50, referring to fig. 8 and 9, the intermediate layer 50 is etched to form transparent dielectric layers 241 mixed with scattering particles on the side surfaces of the P-type semiconductor layers 22 of each light emitting stack. The cross section of the transparent dielectric layer 241 is an inverted right-angled triangle, and the longer right-angled side of the inverted right-angled triangle is in contact with the P-type semiconductor layer 22.

S60, referring to fig. 9 and fig. 10, a reflective layer 242 is formed on the surface of the transparent dielectric layer 241 of each light emitting stack away from the corresponding P-type semiconductor layer 22. Thereby forming a plurality of light emitting cells 20 arranged at intervals in the second direction on the temporary substrate 40.

Optionally, the reflective layer 242 is a metal reflective layer. The material of the metal reflecting layer can be gold, beryllium/gold, zinc/gold, tin/silver, silver material and other metals with high reflectivity.

S70, referring to fig. 1 and fig. 11, forming an adhesion layer 60 on a surface of the N-type semiconductor layer 21 of each light emitting cell 20 away from the active layer 23; each light-emitting unit 20 is then transferred from the temporary substrate 40 to the substrate 10 through the corresponding adhesive layer 60, respectively; the temporary substrate 40 is then removed from the P-type semiconductor layer 22 of each light emitting cell 20 using a laser lift-off technique or the like. At this time, the plurality of light emitting cells 20 are disposed on the substrate 10 at intervals in the second direction, and the N-type semiconductor layer 21, the active layer 23, and the P-type semiconductor layer 22 of each light emitting cell 20 are sequentially stacked on the substrate 10.

The "forming the adhesion layer 60 on the surface of the N-type semiconductor layer 21 of each light emitting cell 20 away from the active layer 23" specifically includes:

a sacrificial layer is formed by filling between the adjacent light emitting cells 20. Wherein the height of the sacrificial layer is the same as the height of the N-type semiconductor layer 21.

Depositing a temporary layer on the surface of the N-type semiconductor layer 21 away from the active layer 23; the temporary layer is subjected to patterning processing to expose and remove the sacrificial layer. Thereby forming the adhesion layer 60 on the surface of the N-type semiconductor layer 21 of each light emitting cell 20 away from the active layer 23. It is understood that in other embodiments, the adhesion layer 60 may be formed by other prior art techniques.

It is to be understood that the utility model is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the utility model as defined by the appended claims.

Claims (11)

1. A light-emitting unit, comprising:

an N-type semiconductor layer;

a P-type semiconductor layer;

the active layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer; and

a light extraction structure at least partially disposed on a side of the P-type semiconductor layer, configured to reflect and/or scatter light radiated from the active layer.

2. The light-emitting unit according to claim 1, wherein the light extraction structure comprises a transparent dielectric layer and scattering particles mixed in the transparent dielectric layer.

3. The lighting unit of claim 2, wherein the transparent dielectric layer comprises liquid glass and the scattering particles comprise SiO₂Particles, TiO₂Particles, Al₂O₃Particles or glass hollow particles.

4. The light-emitting unit according to claim 2, wherein the light extraction structure further comprises a reflective layer disposed on a surface of the transparent dielectric layer away from the P-type semiconductor layer.

5. The light-emitting unit according to claim 2, wherein the cross-sectional shape of the transparent dielectric layer is an inverted right-angled triangle in which a longer right-angled side is in contact with the P-type semiconductor layer.

6. A lighting unit as recited in claim 5, wherein the hypotenuse of the inverted triangle is angled from the longer cathetus in a range of 5 degrees to 20 degrees.

7. The light-emitting unit according to claim 2, wherein a refractive index of the transparent dielectric layer is between a refractive index of air and a refractive index of the P-type semiconductor layer.

8. The light-emitting unit according to claim 1, wherein the side surface of the P-type semiconductor layer comprises a plurality of patterns, each of the patterns comprising a plurality of sloped regions and a bottom region adjacent to the sloped regions.

9. The light-emitting unit according to any one of claims 1 to 8, wherein the light emitted from the active layer is ultraviolet light having a wavelength of 320nm to 400 nm;

or, between 280nm-320 nm;

or, between 200nm and 280 nm.

10. A display array module, comprising:

a substrate; and

the light-emitting units according to any one of claims 1 to 9, wherein the light-emitting units are respectively disposed on the substrate at intervals.

11. A display device, comprising:

a drive circuit; and

the display array module of claim 10; the driving circuit is electrically connected with the display array module.

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